CN114908358B8 - 一种两亲性分子层的制备方法及装置 - Google Patents

一种两亲性分子层的制备方法及装置 Download PDF

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CN114908358B8
CN114908358B8 CN202210391473.3A CN202210391473A CN114908358B8 CN 114908358 B8 CN114908358 B8 CN 114908358B8 CN 202210391473 A CN202210391473 A CN 202210391473A CN 114908358 B8 CN114908358 B8 CN 114908358B8
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electrode layer
flow channel
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CN114908358A (zh
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杨秉达
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Kong Que Chengdu Technology Co ltd
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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    • C25B9/00Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/17Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/60Constructional parts of cells

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Abstract

本发明涉及一种快速制备两亲性分子层的制备方法及制备装置,包括步骤:S1提供用于制备多个两亲性分子层的制备装置,制备装置内设有多个微孔,以及能够使得溶液流向微孔的流道,制备装置内还包括电极层,使得流向微孔内的溶液可以与电极层相接触;S2向流道内加入第一极性溶液,使得第一极性溶液进入至少一个微孔,并与电极层相接触;S3依次向流道内加入膜溶液和第二极性溶液,使得膜溶液在流道内形成弯月面;S4向流道内加入第二极性溶液,使得第二极性溶液推动膜溶液移动并流经第一极性溶液与电极层相接触的至少一个微孔,膜溶液中的两亲性分子在相应的微孔上形成两亲性分子层。本发明提供的方法操作简单、安全,所选用的制备装置生产成本低。
CN202210391473.3A 2022-04-14 2022-04-14 一种两亲性分子层的制备方法及装置 Active CN114908358B8 (zh)

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WO2011154114A2 (de) * 2010-06-07 2011-12-15 Albert-Ludwigs-Universität Freiburg Verfahren zum herstellen einer bilipidschicht sowie mikrostruktur und messanordnung
CN101932933B (zh) * 2007-12-19 2014-01-01 牛津纳米孔技术有限公司 两性分子层的形成
CN104321441B (zh) * 2012-02-16 2016-10-19 牛津楠路珀尔科技有限公司 聚合物的测量的分析
US9791432B2 (en) * 2015-03-20 2017-10-17 Genia Technologies, Inc. Serpentine flow channels for flowing fluids over chip sensors
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CN110383065B (zh) * 2017-03-14 2020-12-29 豪夫迈·罗氏有限公司 纳米孔阱结构和方法
CN113061531A (zh) * 2021-06-03 2021-07-02 成都齐碳科技有限公司 芯片结构、芯片组件、成膜方法、纳米孔测序装置及应用
CN113070113A (zh) * 2021-06-03 2021-07-06 成都齐碳科技有限公司 芯片结构、成膜方法、纳米孔测序装置及应用
CN113402768A (zh) * 2021-07-06 2021-09-17 四川大学 一种用于纳米孔测序的磷脂双层膜及其制备方法

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JP5114702B2 (ja) * 2005-07-29 2013-01-09 国立大学法人 東京大学 両親媒性単分子膜の接触による二分子膜の形成方法およびその装置
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CN101932933B (zh) * 2007-12-19 2014-01-01 牛津纳米孔技术有限公司 两性分子层的形成
CN102072971A (zh) * 2009-11-20 2011-05-25 复旦大学 一种在液相中原位制备脂双分子层膜的方法
WO2011154114A2 (de) * 2010-06-07 2011-12-15 Albert-Ludwigs-Universität Freiburg Verfahren zum herstellen einer bilipidschicht sowie mikrostruktur und messanordnung
CN104321441B (zh) * 2012-02-16 2016-10-19 牛津楠路珀尔科技有限公司 聚合物的测量的分析
CN104918696B (zh) * 2012-10-26 2018-11-13 牛津楠路珀尔科技有限公司 膜阵列的形成及其装置
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CN107124908B (zh) * 2014-10-17 2019-11-19 牛津纳米孔技术公司 具有可拆卸部件的电气装置
US9791432B2 (en) * 2015-03-20 2017-10-17 Genia Technologies, Inc. Serpentine flow channels for flowing fluids over chip sensors
CN110383065B (zh) * 2017-03-14 2020-12-29 豪夫迈·罗氏有限公司 纳米孔阱结构和方法
CN113061531A (zh) * 2021-06-03 2021-07-02 成都齐碳科技有限公司 芯片结构、芯片组件、成膜方法、纳米孔测序装置及应用
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Effective date of registration: 20240520

Address after: No. 1888 Huanhu East Road, Dongjiageng Town, Dongdong New Area, Chengdu City, Sichuan Province, 641400

Patentee after: Kong Que (Chengdu) Technology Co.,Ltd.

Country or region after: China

Address before: 510320 unit 602, 6th floor, No. 7, helix 4th Road, Guangzhou International Biological Island, Huangpu District, Guangzhou City, Guangdong Province

Patentee before: Guangzhou Kongque Gene Technology Co.,Ltd.

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CI03 Correction of invention patent
CI03 Correction of invention patent

Correction item: Patentee|Address

Correct: Kong Que (Chengdu) Technology Co., Ltd.|No. 1888 Huanhu East Road, Dongjiageng Town, Dongdong New Area, Chengdu City, Sichuan Province, 641400

False: Guangzhou Kongque Gene Technology Co., Ltd.|510320 unit 602, 6th floor, No. 7, helix 4th Road, Guangzhou International Biological Island, Huangpu District, Guangzhou City, Guangdong Province

Number: 23-01

Page: The title page

Volume: 40

Correct: Kong Que (Chengdu) Technology Co., Ltd.|No. 1888 Huanhu East Road, Dongjiageng Town, Dongdong New Area, Chengdu City, Sichuan Province, 641400

False: Guangzhou Kongque Gene Technology Co., Ltd.|510320 unit 602, 6th floor, No. 7, helix 4th Road, Guangzhou International Biological Island, Huangpu District, Guangzhou City, Guangdong Province

Number: 23-01

Volume: 40

OR01 Other related matters
OR01 Other related matters