CN110070800A - Pixel electrode structure and pixel electrode production method - Google Patents
Pixel electrode structure and pixel electrode production method Download PDFInfo
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- CN110070800A CN110070800A CN201910271581.5A CN201910271581A CN110070800A CN 110070800 A CN110070800 A CN 110070800A CN 201910271581 A CN201910271581 A CN 201910271581A CN 110070800 A CN110070800 A CN 110070800A
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- pixel electrode
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000005611 electricity Effects 0.000 claims abstract description 9
- 238000002834 transmittance Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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Abstract
A kind of pixel electrode structure includes pixel electrode, data line, conductive film, transistor and common electrode.The data line is set to the pixel electrode side, for transmitting data-signal.The conductive film is set to below the pixel electrode, and the data-signal for being transmitted the data line is sent to the pixel electrode.The transistor is set on the conductive film.The common electrode is set to below data line, the transistor is connected to, for leaking electricity.The pixel electrode structure through the invention can promote the aperture opening ratio and light transmittance of pixel electrode.
Description
Technical field
The present invention relates to field of display technology, more particularly, to a kind of pixel electrode structure and pixel with high aperture
Method for making its electrode.
Background technique
With the development of display technology, for better display effect, the driving circuit of the 3T1C of display panel at present, energy
Improve the visual angle of panel.However in order to reduce crosstalk (crosstalk) phenomenon, can additionally be arranged in the dot structure of display panel
One common electrode (share bar) is leaked electricity.With reference to Fig. 1, Fig. 1 is existing pixel electrode structure schematic diagram.Pixel electricity
It include data line 12, pixel electrode 14, conductive film 16 and transistor T1, T2, the letter that data line 12 is transmitted in pole structure 10
Number pixel electrode 14 is transmitted to by transistor T1, T2 and conductive film 16, pixel electrode 14 is transmitted further according to data line 12
Signal shows grayscale.Be located at the center of pixel electrode 14 with common electrode 18 in existing pixel electrode structure, for into
Row electric leakage.
But in order to reduce influence of the photoelectric effect to share bar, the metal line layer below share bar needs to add
Width, metal wire have blocked the normal display area of pixel, cause the aperture opening ratio of pixel to decline, and then light transmittance is caused to decline.
Therefore, the present invention provides a kind of pixel electrode structure and pixel electrode production method.So that the shared electricity in panel
Pole is not required to be set on pixel electrode, promotes the aperture opening ratio and light transmittance of pixel.
Summary of the invention
The present invention provides a kind of pixel electrode structure and includes pixel electrode, data line, conductive film, transistor and share electricity
Pole.The data line is set to the pixel electrode side, for transmitting data-signal.The conductive film is set to the pixel
Base part, the data-signal for being transmitted the data line are sent to the pixel electrode.The transistor is set
It is placed on the conductive film.The common electrode is set to below data line, the transistor is connected to, for leaking electricity.
Preferably, the common electrode is connected to the drain electrode of the transistor.
Preferably, the width of the common electrode is less than the width of the data line.
Preferably, the pixel electrode includes main pixel electrode and sub-pixel electrode.
Preferably, the conductive film is between the main pixel electrode and the sub-pixel electrode.
It includes: to form conductive film that the present invention, which separately provides a kind of pixel electrode production method,；It is formed in the conductive film side
Data line；Transistor is formed on the conductive film；Opening is formed on the transistor；It is arranged altogether below the data line
Use electrode；The common electrode and the opening are connected.
Preferably, the opening is formed in the drain electrode of the transistor.
Preferably, the width of the common electrode is less than the width of the data line.
Preferably, the pixel electrode includes main pixel electrode and sub-pixel electrode, the conductive film is located at the main picture
Between plain electrode and the sub-pixel electrode.
Preferably, the common electrode is connected to the drain electrode of the transistor by described be open.
Detailed description of the invention
Fig. 1 is painted the structural schematic diagram of prior art pixel electrode；
Fig. 2 is painted the structural schematic diagram of the pixel electrode of the embodiment of the present invention；
Fig. 3 is painted the structural schematic diagram of the conductive film of the embodiment of the present invention；
Fig. 4 is painted the data line of the embodiment of the present invention and the structural schematic diagram of transistor；
Fig. 5 is painted the hatch frame schematic diagram of the third transistor of the embodiment of the present invention；
Fig. 6 is painted the common electrode structure schematic diagram of the embodiment of the present invention.
Specific embodiment
It elaborates with reference to the accompanying drawing to pixel electrode structure provided by the invention and pixel electrode production method.It is aobvious
So, the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the implementation in the present invention
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The scope of protection of the invention.
Referring to FIG. 2, Fig. 2 show the dot structure schematic diagram of the embodiment of the present invention, in the pixel of the embodiment of the present invention
Include conductive film 30, data line 40, the first transistor T41, second transistor T42, third transistor T43, opening in structure 20
50, common electrode 60 and pixel electrode 70,72.The signal of data line 40 is conducted to pixel electrode 70 or picture by conductive film 30
Plain electrode 72, and the signal that the first transistor T41, second transistor T42 and third transistor T43 then are used to control data line is
It is no to be conducted to pixel electrode 70 or pixel electrode 72.Third transistor T43 have opening 50, opening 50 by common electrode 60 into
Row electric leakage, to reduce the crosstalk phenomenon in dot structure 20.And common electrode 60 is set to data after extending outwardly from opening 50
The lower section of line 40, in this way, which area be overlapped between common electrode 60 and pixel electrode 70,72 can be reduced.
The detailed production method of dot structure 20 shown in Fig. 2 is as shown in Figures 3 to 6.
Please also refer to Fig. 3 and Fig. 4.Fig. 3 show the conductive film 30 in Fig. 2 dot structure, and Fig. 4 show to be set to and lead
Data line 40, the first transistor T41, second transistor T42 and third transistor T43, conductive film 30 on electrolemma 30 are used to
When receiving scanning signal, signal conduction that data line 40 is transmitted to pixel electrode.Further, the first transistor
The scanning signal of the grid connection display panel of T41, decides whether to be connected according to scanning signal.The source electrode of second transistor T42
Connection refers to high level, the drain electrode of the grid connection the first transistor T41 of second transistor T42, when the first transistor T41 is connected
When, second transistor makes pixel extremely element 70,72 be shone according to driving voltage.
Please also refer to Fig. 5 and Fig. 6.Fig. 5 show third transistor in the pixel electrode structure of the embodiment of the present invention and opens
Mouthful schematic diagram, Fig. 6 show the structural schematic diagram of common electrode 60, and third transistor T43 has an opening 50, common electrode 60 from
After the opening 50 of third transistor T43 extends to 40 lower section of data line, common electrode 60 is arranged along data line 40.Such one
Come, the area that common electrode 60 is exposed to the open air only opening 50 is extended to the part of data line 40, and it is most to share electrode 60
Area is located at the lower section of data line 40, and data line 40 be exactly originally in dot structure 20 will not light transmission part, therefore utilize
Pixel electrode structure of the invention can reduce the area of common electrode masking pixel electrode.Specifically, opening 50 is third crystalline substance
The drain electrode of body pipe T43, common electrode 60 are connected with the drain electrode of third transistor T43, therefore pixel electrode structure 20 can pass through
Common electrode 60 is leaked electricity, and the crosstalk phenomenon in pixel electrode structure 20 is avoided to influence display quality.
According to Fig. 2 to step shown in fig. 6, then pixel electrode 70 and pixel electrode 72 as shown in Figure 2 are set, can be made
At the dot structure 20 of the embodiment of the present invention.In 20 preferred embodiment of present invention pixel structure, picture based on pixel electrode 70
Plain electrode, pixel electrode 72 is sub-pixel electrode, preferably, the area of pixel electrode 70 is greater than pixel electrode 72.By main picture
The setting of plain electrode and sub-pixel electrode, it is possible to reduce the subtense angle of pixel electrode.Dot structure 20 of the invention utilizes third
The opening 50 of transistor T43 is connected with the common electrode 60 being set under data line, reduces common electrode and pixel electrode whereby
The area of overlapping, to improve the aperture opening ratio and light transmittance of pixel electrode.
It is set to the common electrode in pixel electrode center in compared to the prior art, needs to widen in the center of pixel electrode
To reduce influence of the electric current to common electrode of photoelectric effect generation so that the aperture opening ratio and light transmittance of pixel electrode substantially under
Drop, reduces the quality of display.Using the pixel electrode structure of the embodiment of the present invention, common electrode is set under data line
Side, then the common electrode being connected to below data line is extended by the opening of transistor, in this way, which pixel electrode does not need
Widen the width of its central metal wire, the aperture opening ratio and light transmittance of pixel electrode can be substantially improved.
The pixel electrode structure and production method through the embodiment of the present invention promote the aperture opening ratio and thoroughly of pixel electrode
Light rate, the above is only a preferred embodiment of the present invention, it is noted that for those skilled in the art,
Various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as this
The protection scope of invention.
Claims (10)
1. a kind of pixel electrode structure characterized by comprising
Pixel electrode；
Data line is set to the pixel electrode side, for transmitting data-signal；
Conductive film, is set to below the pixel electrode, and the data-signal for being transmitted the data line is sent to
The pixel electrode；
Transistor is set on the conductive film；And
Common electrode is set to below data line, the transistor is connected to, for leaking electricity.
2. pixel electrode structure according to claim 1, which is characterized in that the common electrode is connected to the transistor
Drain electrode.
3. pixel electrode structure according to claim 1, which is characterized in that the width of the common electrode is less than the number
According to the width of line.
4. pixel electrode structure according to claim 1, which is characterized in that the pixel electrode include main pixel electrode with
Sub-pixel electrode.
5. according to claim 4, which is characterized in that the conductive film is located at the main pixel electrode and the sub-pixel
Between electrode.
6. a kind of pixel electrode production method characterized by comprising
Form conductive film；
It is formed data line in the conductive film side；
Transistor is formed on the conductive film；
Opening is formed on the transistor；
Common electrode is formed below the data line；
The common electrode and the opening are connected.
7. pixel electrode production method according to claim 6, which is characterized in that the opening is formed in the transistor
Drain electrode on.
8. pixel electrode production method according to claim 6, which is characterized in that the width of the common electrode is less than institute
State the width of data line.
9. pixel electrode production method according to claim 6, which is characterized in that the pixel electrode includes main pixel electricity
Pole and sub-pixel electrode, the conductive film is between the main pixel electrode and the sub-pixel electrode.
10. pixel electrode production method according to claim 6, which is characterized in that the common electrode is opened by described
Mouth is connected to the drain electrode of the transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910271581.5A CN110070800A (en) | 2019-04-04 | 2019-04-04 | Pixel electrode structure and pixel electrode production method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910271581.5A CN110070800A (en) | 2019-04-04 | 2019-04-04 | Pixel electrode structure and pixel electrode production method |
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| CN110070800A true CN110070800A (en) | 2019-07-30 |
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| CN201910271581.5A Pending CN110070800A (en) | 2019-04-04 | 2019-04-04 | Pixel electrode structure and pixel electrode production method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111025803A (en) * | 2019-12-12 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
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| KR20180129330A (en) * | 2017-05-26 | 2018-12-05 | 엘지디스플레이 주식회사 | Liquid crystal display device |
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| CN102002334A (en) * | 2009-09-02 | 2011-04-06 | 三星电子株式会社 | Organic layer composition and liquid crystal display using the same |
| CN201876642U (en) * | 2010-03-19 | 2011-06-22 | 华映视讯（吴江）有限公司 | Pixel structure |
| CN104122724A (en) * | 2014-07-04 | 2014-10-29 | 深圳市华星光电技术有限公司 | Low-color-error liquid crystal array substrate and drive method thereof |
| CN104865763A (en) * | 2015-06-12 | 2015-08-26 | 深圳市华星光电技术有限公司 | Array substrate |
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| KR20180129330A (en) * | 2017-05-26 | 2018-12-05 | 엘지디스플레이 주식회사 | Liquid crystal display device |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20190730 |
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| WD01 | Invention patent application deemed withdrawn after publication |