CN109791787B - 模拟数字接口sram结构 - Google Patents

模拟数字接口sram结构 Download PDF

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Publication number
CN109791787B
CN109791787B CN201780053154.9A CN201780053154A CN109791787B CN 109791787 B CN109791787 B CN 109791787B CN 201780053154 A CN201780053154 A CN 201780053154A CN 109791787 B CN109791787 B CN 109791787B
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bit
local memory
analog
stored
data
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Chinese (zh)
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CN109791787A (zh
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金昌贤
朴俊荣
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Zhixin Guangdong Semiconductor Intelligent Technology Co ltd
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Zhixin Guangdong Semiconductor Intelligent Technology Co ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Analogue/Digital Conversion (AREA)
CN201780053154.9A 2016-07-06 2017-07-04 模拟数字接口sram结构 Active CN109791787B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020160085736A KR101907028B1 (ko) 2016-07-06 2016-07-06 아날로그 디지털 인터페이스 sram 구조
KR10-2016-0085736 2016-07-06
PCT/KR2017/007097 WO2018008946A1 (ko) 2016-07-06 2017-07-04 아날로그 디지털 인터페이스 sram 구조

Publications (2)

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CN109791787A CN109791787A (zh) 2019-05-21
CN109791787B true CN109791787B (zh) 2023-08-18

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CN201780053154.9A Active CN109791787B (zh) 2016-07-06 2017-07-04 模拟数字接口sram结构

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KR (1) KR101907028B1 (ko)
CN (1) CN109791787B (ko)
WO (1) WO2018008946A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113382873B (zh) 2019-02-06 2023-01-03 惠普发展公司，有限责任合伙企业 打印部件及用于打印部件的存储器电路
MX2021009129A (es) 2019-02-06 2021-09-10 Hewlett Packard Development Co Memorias de matrices de fluidos.
US11613117B2 (en) 2019-02-06 2023-03-28 Hewlett-Packard Development Company, L.P. Multiple circuits coupled to an interface
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit
BR112021014760A2 (pt) 2019-02-06 2021-09-28 Hewlett-Packard Development Company, L.P. Componente de impressão de comunicação
KR102207909B1 (ko) 2019-02-25 2021-01-26 연세대학교 산학협력단 비트라인의 전하 공유에 기반하는 cim 장치 및 그 동작 방법
US11081168B2 (en) * 2019-05-23 2021-08-03 Hefei Reliance Memory Limited Mixed digital-analog memory devices and circuits for secure storage and computing
CN111816234B (zh) * 2020-07-30 2023-08-04 中科南京智能技术研究院 一种基于sram位线同或的电压累加存内计算电路
KR20220056022A (ko) 2020-10-27 2022-05-04 삼성전자주식회사 정적 램 메모리 장치 및 이의 동작 방법
CN112765926B (zh) * 2021-01-25 2024-07-09 中国科学院微电子研究所 一种sram的版图布局方法及装置

Citations (5)

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US4415882A (en) * 1981-07-13 1983-11-15 Nippon Telegraph & Telephone Public Corporation Analog to digital converter
US5745409A (en) * 1995-09-28 1998-04-28 Invox Technology Non-volatile memory with analog and digital interface and storage
CN1373479A (zh) * 2001-03-05 2002-10-09 三菱电机株式会社 利用电阻值的变化来存储数据的数据读出容限大的存储器
CN1459153A (zh) * 2001-03-17 2003-11-26 皇家菲利浦电子有限公司 用于射频电路与基带电路之间数字信号交换的接口概念
CN104992723A (zh) * 2015-06-11 2015-10-21 北京时代民芯科技有限公司 一种高可靠sram编译器控制电路

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US6594036B1 (en) * 1998-05-28 2003-07-15 Sandisk Corporation Analog/multi-level memory for digital imaging
US7898885B2 (en) 2007-07-19 2011-03-01 Micron Technology, Inc. Analog sensing of memory cells in a solid state memory device
US8004887B2 (en) 2008-11-07 2011-08-23 Micron Technology, Inc. Configurable digital and analog input/output interface in a memory device
KR101993139B1 (ko) * 2013-07-24 2019-06-27 한국전자통신연구원 연속 근사 레지스터 아날로그 디지털 컨버터 및 이를 테스트하기 위한 bist 장치의 동작 방법
US9172389B2 (en) * 2014-01-09 2015-10-27 Mediatek Inc. High-speed successive approximation analog-to-digital converter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415882A (en) * 1981-07-13 1983-11-15 Nippon Telegraph & Telephone Public Corporation Analog to digital converter
US5745409A (en) * 1995-09-28 1998-04-28 Invox Technology Non-volatile memory with analog and digital interface and storage
CN1373479A (zh) * 2001-03-05 2002-10-09 三菱电机株式会社 利用电阻值的变化来存储数据的数据读出容限大的存储器
CN1459153A (zh) * 2001-03-17 2003-11-26 皇家菲利浦电子有限公司 用于射频电路与基带电路之间数字信号交换的接口概念
CN104992723A (zh) * 2015-06-11 2015-10-21 北京时代民芯科技有限公司 一种高可靠sram编译器控制电路

Also Published As

Publication number Publication date
KR20180005525A (ko) 2018-01-16
WO2018008946A1 (ko) 2018-01-11
KR101907028B1 (ko) 2018-10-11
CN109791787A (zh) 2019-05-21

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