CN105336275A - High-density RGB (red green blue) inverted LED (light emitting diode) display screen encapsulation structure and manufacturing method - Google Patents
High-density RGB (red green blue) inverted LED (light emitting diode) display screen encapsulation structure and manufacturing method Download PDFInfo
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- CN105336275A CN105336275A CN201510717945.XA CN201510717945A CN105336275A CN 105336275 A CN105336275 A CN 105336275A CN 201510717945 A CN201510717945 A CN 201510717945A CN 105336275 A CN105336275 A CN 105336275A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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Abstract
The invention relates to a high-density RGB (red green blue) inverted LED (light emitting diode) display screen encapsulation structure and a manufacturing method. The high-density RGB inverted LED display screen encapsulation structure comprises a PCB (printed circuit board), wherein a plurality of module units are arranged on the upper surface of the PCB. The display screen encapsulation structure is characterized in that the module unit comprises an anisotropic conductive film sprayed and coated on the upper surface of the PCB; an RGB three-color inverted chip is arranged on the upper surface of the PCB; an inverted chip electrode arranged on the lower surface of the RGB three-color inverted chip is bonded with the PCB metal layer arranged on the upper surface of the PCB through the anisotropic conductive film. The upper surface of the PCB is provided with encapsulation silica gel. The thickness of the anisotropic conductive film is 10 to 100 mum. The welding wire space is omitted, an ultra-high-definition display screen with the pixel space capable of reaching 0.5mm is realized; meanwhile, the problem of poor lead wire bonding reliability is solved; the reliability of the display screen is effectively improved.
Description
Technical field
The present invention relates to a kind of highly dense RGB flip LED display screen encapsulating structure and manufacture method, ntkLED technical field.
Background technology
Along with the development of technology, indoor high-definition display screen is strided forward to 1.0mm by pel spacing 3.0mm gradually.Tradition RGB display screen encapsulating structure adopts support bonding wire point rubber seal dress, and be limited by the factor such as stent size, bonding wire craft, device size is difficult to break through to 0.8 × below 0.8mm, constrains the development of the following high-definition display screen of pel spacing 1.0mm.
The weldering of flip-chip eutectic is general adopts the weldering of tin cream eutectic, only for the chip package with large-size in prior art.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of highly dense RGB flip LED display screen encapsulating structure and manufacture method, eliminate bonding wire space, pel spacing can reach the ultra high-definition display screen of 0.5mm; Solve the problem of wire bonding poor reliability simultaneously, effectively improve the reliability of display screen.
According to technical scheme provided by the invention, described highly dense RGB flip LED display screen encapsulating structure, comprises pcb board, arranges some module group units at pcb board upper surface; It is characterized in that: described module group unit comprises the Anisotropically conductive glued membrane being sprayed on pcb board upper surface, arrange RGB tri-look flip-chip at pcb board upper surface, the flip chip electrode of RGB tri-look flip-chip lower surface is bonded by the pcb board metal level of Anisotropically conductive glued membrane and pcb board upper surface.
Further, packaging silicon rubber is set at described pcb board upper surface.
Further, described pcb board arranges the lead-in wire perforation running through upper and lower surface, and lead-in wire perforation is connected with the pcb board metal level of pcb board upper surface.
Further, the thickness of described Anisotropically conductive glued membrane is 10 ~ 100 μm.
The manufacture method of described highly dense RGB flip LED display screen encapsulating structure, is characterized in that, comprise the following steps:
Step 1: make pcb board, and at pcb board upper surface spraying Anisotropically conductive glued membrane;
Step 2: by RGB tri-look flip-chip successively die bond on the pcb board being coated with Anisotropically conductive glued membrane, applies certain pressure and temperature during die bond, carries out pre-pressing; Described pressure is 10 ~ 50g/cm
2, heating temperatures is to 50 ~ 80 DEG C;
Step 3: be placed on pressing machine by the pcb board that die bond is good, heating temperatures is to 80 ~ 150 DEG C, and pressure is 5 ~ 20kg/cm
2, pressing time is 30 ~ 120 minutes, completes the interconnected bonding of RGB tri-look flip-chip and pcb board metal level;
Step 4: adopt mould top technique, by packaging silicon rubber mould top to pcb board upper surface, and passes through the baking temperature of 80 ~ 150 DEG C, completes mould closedtop dress.
Further, also step 5 is comprised: in the drive IC that the attachment of pcb board lower surface is necessary.
The present invention is by peculiar process, by the upside-down mounting of RGB tri-look flip-chip on pcb board, eliminate bonding wire space, obtain the ultra high-definition display screen that pel spacing can reach 0.5mm, solve a difficult problem for wire bonding poor reliability simultaneously, effectively improve the reliability of display screen.
Accompanying drawing explanation
Fig. 1 is the encapsulating structure schematic diagram of 8 × 16 module group units of the present invention.
Fig. 2 is the encapsulating structure schematic diagram of 16 × 32 module group units of the present invention.
Fig. 3 is the sectional view of described module group unit.
Fig. 4 is the planimetric map of described module group unit.
Fig. 5 is the sectional view after described module group unit completes mould closedtop glue.
Sequence number in figure: pcb board 1, Anisotropically conductive glued membrane 2, RGB tri-look flip-chip 3, module group unit 4, flip chip electrode 5, pcb board metal level 6, lead-in wire perforation 7, packaging silicon rubber 8.
Embodiment
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 1 and Figure 2, highly dense RGB flip LED display screen encapsulating structure of the present invention, comprises pcb board 1, arranges some module group unit 4(as shown in Figure 1 at pcb board 1 upper surface, for arranging the schematic diagram of 8 × 16 module group units 4 on pcb board 1; As shown in Figure 2, for arranging the schematic diagram of 16 × 32 module group units 4 on pcb board 1).
As shown in Figure 3, Figure 4, described module group unit 4 comprises and is sprayed on the Anisotropically conductive glued membrane 2 that pcb board 1 upper surface thickness is 10 ~ 100 μm, the flip chip electrode 5 arranging RGB tri-look flip-chip 3, RGB tri-look flip-chip 3 lower surface at pcb board 1 upper surface is bonded by the pcb board metal level 6 of Anisotropically conductive glued membrane 2 with pcb board 1 upper surface.
As shown in Figure 5, packaging silicon rubber 8 is set after described pcb board 1 upper surface is also by mould closedtop glue; As shown in Figure 2, for completing the planimetric map of encapsulating structure after mould closedtop glue.
As shown in Figure 3, described pcb board 1 arranges the lead-in wire perforation 7 running through upper and lower surface, and lead-in wire perforation 7 is connected with the pcb board metal level 6 of pcb board 1 upper surface.
Embodiment one: a kind of manufacture method of highly dense RGB flip LED display screen encapsulating structure, comprises the following steps:
Step 1: adopt standard technology to make pcb board 1, and be the Anisotropically conductive glued membrane 2 of 10 μm at pcb board 1 upper surface coating thickness;
Step 2: utilize high precision upside-down mounting die bond equipment by RGB tri-look flip-chip 3 successively die bond on the pcb board 1 being coated with Anisotropically conductive glued membrane 2, applies certain pressure and temperature during die bond, carries out pre-pressing; Described pressure is 10g/cm
2, heating temperatures is to 50 DEG C;
Step 3: be placed on pressing machine by pcb board 1 good for die bond, heating temperatures is to 80 DEG C, and pressure is 20kg/cm
2, pressing time is 30 minutes, completes the interconnected bonding of RGB tri-look flip-chip 3 and pcb board metal level 6;
Step 4: utilize mould top technique, by packaging silicon rubber 8 mould top to pcb board 1 upper surface, and passes through the baking temperature of 80 DEG C, completes mould closedtop dress, as shown in Figure 5;
Step 5: in the drive IC that the attachment of pcb board 1 lower surface is necessary, complete the manufacture of display screen unit module.
Embodiment two: a kind of manufacture method of highly dense RGB flip LED display screen encapsulating structure, comprises the following steps:
Step 1: adopt standard technology to make pcb board 1, and be the Anisotropically conductive glued membrane 2 of 100 μm at pcb board 1 upper surface coating thickness;
Step 2: utilize high precision upside-down mounting die bond equipment by RGB tri-look flip-chip 3 successively die bond on the pcb board 1 being coated with Anisotropically conductive glued membrane 2, applies certain pressure and temperature during die bond, carries out pre-pressing; Described pressure is 50g/cm
2, heating temperatures is to 80 DEG C;
Step 3: be placed on pressing machine by pcb board 1 good for die bond, heating temperatures is to 150 DEG C, and pressure is 5kg/cm
2, pressing time is 120 minutes, completes the interconnected bonding of RGB tri-look flip-chip 3 and pcb board metal level 6;
Step 4: utilize mould top technique, by packaging silicon rubber 8 mould top to pcb board 1 upper surface, and passes through the baking temperature of 150 DEG C, completes mould closedtop dress, as shown in Figure 5;
Step 5: in the drive IC that the attachment of pcb board 1 lower surface is necessary, complete the manufacture of display screen unit module.
Embodiment three: a kind of manufacture method of highly dense RGB flip LED display screen encapsulating structure, comprises the following steps:
Step 1: adopt standard technology to make pcb board 1, and be the Anisotropically conductive glued membrane 2 of 50 μm at pcb board 1 upper surface coating thickness;
Step 2: utilize high precision upside-down mounting die bond equipment by RGB tri-look flip-chip 3 successively die bond on the pcb board 1 being coated with Anisotropically conductive glued membrane 2, applies certain pressure and temperature during die bond, carries out pre-pressing; Described pressure is 25g/cm
2, heating temperatures is to 60 DEG C;
Step 3: be placed on pressing machine by pcb board 1 good for die bond, heating temperatures is to 100 DEG C, and pressure is 10kg/cm
2, pressing time is 60 minutes, completes the interconnected bonding of RGB tri-look flip-chip 3 and pcb board metal level 6;
Step 4: utilize mould top technique, by packaging silicon rubber 8 mould top to pcb board 1 upper surface, and passes through the baking temperature of 100 DEG C, completes mould closedtop dress, as shown in Figure 5;
Step 5: in the drive IC that the attachment of pcb board 1 lower surface is necessary, complete the manufacture of display screen unit module.
The present invention utilizes Anisotropically conductive glued membrane Z-direction to conduct electricity, X is to the characteristic insulated with Y-direction, the Anisotropically conductive glued membrane that a layer thickness is 10 ~ 100 μm is sprayed at pcb board upper surface, certain pressure and temperature is applied when RGB tri-look flip-chip die bond, Anisotropically conductive glued membrane below flip chip electrode is conducted electricity, and utilize the adhesiveness of guiding conductive adhesive film self flip chip electrode and pcb board metal level to be glued together, the resolution of Anisotropically conductive glued membrane can reach 5 μm, the difficult problem that effective solution RGB tri-look flip-chip tin cream eutectic weldering precision is not high, achieve the encapsulating structure of the following ultra high-definition display screen of pel spacing 0.5mm.
Claims (7)
1. a highly dense RGB flip LED display screen encapsulating structure, comprises pcb board (1), arranges some module group units (4) at pcb board (1) upper surface; It is characterized in that: described module group unit (4) comprises the Anisotropically conductive glued membrane (2) being sprayed on pcb board (1) upper surface, arrange RGB tri-look flip-chip (3) at pcb board (1) upper surface, the flip chip electrode (5) of RGB tri-look flip-chip (3) lower surface is bonded by the pcb board metal level (6) of Anisotropically conductive glued membrane (2) with pcb board (1) upper surface.
2. highly dense RGB flip LED display screen encapsulating structure as claimed in claim 1, is characterized in that: arrange packaging silicon rubber (8) at described pcb board (1) upper surface.
3. highly dense RGB flip LED display screen encapsulating structure as claimed in claim 1, it is characterized in that: bore a hole (7) at the upper lead-in wire running through upper and lower surface that arranges of described pcb board (1), lead-in wire perforation (7) is connected with the pcb board metal level (6) of pcb board (1) upper surface.
4. highly dense RGB flip LED display screen encapsulating structure as claimed in claim 1, is characterized in that: the thickness of described Anisotropically conductive glued membrane (2) is 10 ~ 100 μm.
5. a manufacture method for highly dense RGB flip LED display screen encapsulating structure, is characterized in that, comprise the following steps:
Step 1: make pcb board (1), and at pcb board (1) upper surface spraying Anisotropically conductive glued membrane (2);
Step 2: by RGB tri-look flip-chip (3) successively die bond on the pcb board (1) being coated with Anisotropically conductive glued membrane (2), applies certain pressure and temperature during die bond, carries out pre-pressing; Described pressure is 10 ~ 50g/cm
2, heating temperatures is to 50 ~ 80 DEG C;
Step 3: be placed on pressing machine by pcb board (1) good for die bond, heating temperatures is to 80 ~ 150 DEG C, and pressure is 5 ~ 20kg/cm
2, pressing time is 30 ~ 120 minutes, completes the interconnected bonding of RGB tri-look flip-chip (3) and pcb board metal level (6);
Step 4: adopt mould top technique, by packaging silicon rubber (8) mould top to pcb board (1) upper surface, and passes through the baking temperature of 80 ~ 150 DEG C, completes mould closedtop dress.
6. the manufacture method of highly dense RGB flip LED display screen encapsulating structure as claimed in claim 4, is characterized in that: also comprise step 5: in the drive IC that the attachment of pcb board (1) lower surface is necessary.
7. the manufacture method of highly dense RGB flip LED display screen encapsulating structure as claimed in claim 1, is characterized in that: the thickness of described Anisotropically conductive glued membrane (2) is 10 ~ 100 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510717945.XA CN105336275A (en) | 2015-10-28 | 2015-10-28 | High-density RGB (red green blue) inverted LED (light emitting diode) display screen encapsulation structure and manufacturing method |
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| CN201510717945.XA CN105336275A (en) | 2015-10-28 | 2015-10-28 | High-density RGB (red green blue) inverted LED (light emitting diode) display screen encapsulation structure and manufacturing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108492764A (en) * | 2018-03-30 | 2018-09-04 | 厦门凌阳华芯科技有限公司 | A kind of LED display |
| CN109166849A (en) * | 2018-10-12 | 2019-01-08 | 哈尔滨理工大学 | The production method of super-small RGB encapsulation unit |
| CN111525017A (en) * | 2020-07-03 | 2020-08-11 | 华引芯（武汉）科技有限公司 | High-luminous-efficiency flip LED all-inorganic device and manufacturing method thereof |
| CN111863833A (en) * | 2019-04-30 | 2020-10-30 | 云谷（固安）科技有限公司 | Driving backboard structure, display panel and manufacturing method of driving backboard structure |
| US10896928B2 (en) | 2018-02-14 | 2021-01-19 | Xiamen Xm-Plus Technology Ltd | Light emitting diode display device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10896928B2 (en) | 2018-02-14 | 2021-01-19 | Xiamen Xm-Plus Technology Ltd | Light emitting diode display device |
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Application publication date: 20160217 |