CN102446948A - Light emitting element - Google Patents
Light emitting element Download PDFInfo
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- CN102446948A CN102446948A CN201010506242XA CN201010506242A CN102446948A CN 102446948 A CN102446948 A CN 102446948A CN 201010506242X A CN201010506242X A CN 201010506242XA CN 201010506242 A CN201010506242 A CN 201010506242A CN 102446948 A CN102446948 A CN 102446948A
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- emitting diode
- backlight unit
- diode chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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Abstract
The invention provides a light emitting element, which comprises a light emitting diode (LED) chip, a substrate and a joint layer, wherein the LED chip comprises a plurality of LED units, a plurality of electrodes and at least one electrical-connection layer. The LED units are electrically connected with one another through an electric connection layer and are joined with the substrate through the joint layer; and a plurality of passages are arranged inside the substrate, and the substrate is provided with a plurality of external electrodes for supplying electric power to the light emitting element so as to emit light.
Description
Technical field
The present invention relates to a kind of light-emitting component and manufacturing approach thereof, more specifically, relate to a kind of light-emitting component that utilizes outer electrode to be lifted out optical efficiency.
Background technology
In recent years, because the progress of extension and technology makes light-emitting diode (light emitting diode is called for short LED) become one of solid-state illumination light source that has potentiality.Restriction based on physical mechanism; LED only can be with dc powered, and is therefore, any with in the illumination Design of LED as light source; All need arrange in pairs or groups, convert the spendable DC power supply of LED into the alternating current that Utilities Electric Co. is directly provided with electronic components such as rectification and step-downs.Yet increase electronic components such as rectification and step-down, except that the increase that causes illumination cost, the low AC/DC conversion efficiency of electronic components such as rectification and step-down, volume bigger than normal etc. all can influence LED and be used in reliability and the useful life of normal lighting when using.
Alternating-current light emitting diode (ACLED) but element need not add electronic components such as rectification and step-down just direct control in AC power, the following potential major product that becomes the fixed point solid-state illumination.The factors such as operation wattage, chip size, efficient and yield lifting that ACLED is suitable for then have very important influence for this element following practicality and popularization.
ACLED mainly contains two kinds of structures at present: one of which is for doing reverse series-parallel design on circuit, another is for doing the design of Hui Shi electric bridge (bridge circuit) on circuit.Reverse series-parallel the design in operation the time only has 50% LED tube core lighted, and the design of Hui Shi electric bridge (bridge circuit) then can be lighted the tube core that tube core and bridge circuit were electrically connected half the in the bridge architecture in the same time.In comparison, the design of Hui Shi electric bridge (bridge circuit) can increase light-emitting area, helps the ACLED improved efficiency.
Yet in the ACLED structure, no matter reverse series-parallel design or the design of Hui Shi electric bridge (bridge circuit) all needs the electric connection layer between the LED tube core.As shown in Figure 1, be known AC LED electrode configuration mode sketch map, wherein electrode 32 is the electric connection layer among the ACLED, and 1a～1k, 1m, 1n, 1p, 1q, 1r etc. then are the light-emitting zone that the ACLED tube core is not covered by electrode.Can find that by shown in Figure 1 electric connection layer among the ACLED between each tube core has covered the light-emitting zone of tube core significant proportion, and this electric connection structure causes also regional shading to cause luminous efficiency significantly to reduce simultaneously.
Summary of the invention
The present invention proposes to have the light-emitting diode and the manufacturing approach thereof of low light-shading effect.
The present invention proposes a kind of light-emitting component; It comprises light-emitting diode chip for backlight unit, substrate and knitting layer; Wherein light-emitting diode chip for backlight unit comprises a plurality of light emitting diodes, a plurality of electrode and at least one electric connection layer; Be electrically connected to each other through electrically connecting layer between light emitting diode, and through knitting layer and substrates; Have a plurality of passages in the substrate, have a plurality of outer electrodes on it with the luminous required electric power of supply light-emitting component.
The present invention also proposes a kind of light-emitting component, comprises light-emitting diode chip for backlight unit, inferior carrier (sub-mount) and at least one conduction material (solder).Inferior carrier can have at least one circuit, and the conduction material is positioned on time carrier,, and light-emitting diode chip for backlight unit is formed with time carrier electrically connect with the light-emitting diode chip for backlight unit bonding and/or be fixed on time carrier through the conduction material.Wherein, inferior carrier can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), with the circuit planning that makes things convenient for light emitting diode construction and improve its radiating effect.
The present invention proposes a kind of light-emitting component in addition, sees through the arrangement of electric connection structure, electrically connects each light emitting diode in the light-emitting diode chip for backlight unit, so that be one another in series between each light emitting diode, parallel connection or connection in series-parallel connect; Also can electrically connect between each light emitting diode and be Hui Shi electric bridge (bridge circuit).In addition, also can between each light emitting diode, insert fluorescent material and/or scattering particles (scattering particle), increasing the luminous efficiency of light-emitting diode, and/or carry out the wavelength of light conversion to realize mixed light.
The present invention proposes to form the method for light-emitting component in addition.At first, on growth substrate, form n type semiconductor layer, active layer and p type semiconductor layer; Remove part n type semiconductor layer, active layer and p type semiconductor layer to form a plurality of light emitting diodes; Remove the active layer and the p type semiconductor layer of part in each light emitting diode, to expose the part upper surface of n type semiconductor layer; Form n type electrode in the surface that the n type semiconductor layer exposes, form p type electrode on the surface of p type semiconductor layer; In between light emitting diode, form insulation system; In between light emitting diode, form electric connection structure; The coating insulating material has a side of electric connection structure in light-emitting diode chip for backlight unit; In the opposite side formation reflector of light-emitting diode chip for backlight unit with respect to insulation system; Opposite side in the reflector with respect to light-emitting diode chip for backlight unit forms knitting layer (bonding layer); Utilize knitting layer to engage with permanent substrate; Corresponding position with the light-emitting diode chip for backlight unit electrode in growth substrate forms a plurality of passages; See through the offside that a plurality of passages electrically connect electrode of light emitting diode to growth substrate; The part of corresponding a plurality of passages on the offside of growth substrate forms a plurality of outer electrodes of respective leds chip electrode respectively.
Description of drawings
Fig. 1 is known AC LED electrode configuration mode sketch map.
Fig. 2 is the sketch map of the light-emitting component 100 that the present invention disclosed.
Fig. 3 A-3G by the present invention disclosure form the method sketch map of light-emitting component 100.
Fig. 4 is the structural representation of another light-emitting component 200.
Fig. 5 is the structural representation of another light-emitting component 300.
Fig. 6 is the structural representation of another light-emitting component 300 another enforcements.
Fig. 7 A is depicted as the vertical view of another light-emitting component 400.
Fig. 7 B is depicted as the A-A '-A of another light-emitting component 400 " profile.
Description of reference numerals
100: light-emitting component
110: light-emitting diode chip for backlight unit
120: insulating barrier
130: the reflector
140: knitting layer
150: permanent substrate
111: growth substrate
112: light emitting diode
The 112a:n type semiconductor layer
112b: active layer
The 112c:p type semiconductor layer
113a, 113b: electrode
114: insulation system
115: electric connection structure
116: passage
117: outer electrode
200: light-emitting component
250: permanent substrate
300: light-emitting component
310: inferior carrier
320: the conduction material
330: conductive structure
400: light-emitting component
411,412: the light emitting diode crowd
420: electrical contact
B, C, D: node
B ', C ', D ': node
Embodiment
Ask for an interview shown in Figure 2ly, be the sketch map of the light-emitting component 100 that the present invention disclosed, light-emitting component 100 comprises light-emitting diode chip for backlight unit 110, insulating barrier 120, reflector 130, knitting layer 140 and permanent substrate 150.
The surface of light-emitting diode chip for backlight unit 110 1 sides has insulating barrier 120, with the electrical conduction of 150 of isolated light-emitting diode chip for backlight unit 110 and reflector 130, knitting layer (bonding layer) 140 and permanent substrates.Insulating barrier 120 has reflector 130 with respect to the opposite side of light-emitting diode chip for backlight unit 110; Reflector 130 reflexes to the same side in order to the light that light-emitting diode chip for backlight unit 110 is produced; To increase the light extraction efficiency (light extraction efficiency) of light-emitting component 100; Reflector 130 has knitting layer 140 with respect to the opposite side of light-emitting diode chip for backlight unit 110, and knitting layer 140 engages permanent substrate 150 and light-emitting diode chip for backlight unit 110.In the present embodiment, permanent substrate 150 can for example be a silicon substrate.
Light-emitting diode chip for backlight unit 110 comprises growth substrate 111, a plurality of light emitting diode 112, a plurality of electrode 113a and 113b, insulation system 114, electric connection structure 115, passage 116 and outer electrode 117.Light emitting diode 112 for example can pass through Metalorganic chemical vapor deposition method (Metal-Organic Chemical Vapor Deposition) epitaxial growth on growth substrate 111.In present embodiment; Light emitting diode 112 comprises n type semiconductor layer 112a, active layer (active layer) 112b and p type semiconductor layer 112c at least; Grow up in regular turn on growth substrate 111; Wherein active layer 112b can comprise multiple quantum trap structure (multiple quantum well); Ion doping still capable of using or other growth patterns form resilient coating (buffer layer) between n type semiconductor layer 112a and growth substrate, and p type semiconductor layer 112c is with respect to can further forming the electric current dispersion layer on the opposite side of active layer 112b, so that electric current diffuses to active layer 112b more fifty-fifty.Electrode 113a is a n type electrode; Be positioned on the n type semiconductor layer 112a; Electrode 113b is a p type electrode, is positioned on the p type semiconductor layer 112c, and electrode 113a and electrode 113b preferably need form ohmic contact (ohmic contact) respectively with n type semiconductor layer 112a and p type semiconductor layer 112c.112 of light emitting diodes have insulation system 114, in the present embodiment, the width of insulation system 114 need be enough to 112 of the light emitting diodes of isolated insulation system 114 both sides non-through electric connection structure 115 conduction electrically, form effectively insulation.See through insulation system 114, be able to provide light emitting diode 112 required static and short-circuit protection, make side, especially active layer (active layer) 112b of light emitting diode 112 do not influenced or destroy by unusual electrically conduction situation.In the present embodiment, insulation system 114 can be by implementing (Locally) planarization that spin-on glasses method (Spin-on glass) is reached locality.
One side of insulation system 114 has electric connection structure 115; With the n type electrode 113a of the light emitting diode in the electric connection light emitting diode 112 and the p type electrode 113b of another light emitting diode; Repeat this connected mode; Connect each light emitting diode 112 in the light-emitting diode chip for backlight unit 110 with the serial or parallel connection mode thus, be one another in series to constitute 112 of each light emitting diodes, parallel connection, connection in series-parallel connects or reverse connection in series-parallel connects light-emitting diode chip for backlight unit 110.In addition, 112 of each light emitting diodes can electrically connect (electrically connecting in series) become have a plurality of light emitting diodes single-chip (Multiple-dies Chip, MC); Cooperating voltage is with single single chip architecture or making up a plurality of single chip architectures can be applicable on DC power supply or the AC power after over commutation.Also can in single single-chip, electrically connect a plurality of light emitting diodes 112 for comprising the electrical layout of Hui Shi electric bridge (bridge circuit), to be applied on the AC power.See through electric connection structure 115; 112 of each light emitting diodes are electrically connected to each other; In an embodiment, above-mentioned electrically connect situation makes light-emitting diode chip for backlight unit 110 can supply each light emitting diode 112 required electrical power for operation through two electrodes (being the n type electrode of light emitting diode 112 in the light emitting diode 112 after the electric connection and the p type electrode of another light emitting diode 112).
In the present embodiment, growth substrate 111 is sapphire (Sapphire) substrate, and the preferred thickness after grinding is about 10 μ m.Growth substrate 111 has a plurality of passages 116 that connect and/or penetrate growth substrate 111, wherein connects and is meant passing through of orthoscopic, is meant passing through of non-homogeneous or non-rectilinear formula and penetrate, but still connects growth substrate 111.Passage 116 is in growth substrate 111 and the corresponding position of a plurality of outer electrodes 117 forms; Has conductive material in the passage 116; To electrically connect outer electrode 117 and light emitting diode 112; Outer electrode 117 is positioned on the growth substrate 111, with the electrode electric connection of light-emitting diode chip for backlight unit 110, makes light-emitting diode chip for backlight unit 110 obtain the power supply supply through the electric conducting materials in outer electrode 117 and the passage 116.It should be noted that; The electric connection that light emitting diode is 112 can directly form through electric connection structure 115; Each light emitting diode 112 need not form electrode more separately; Only need on the position of corresponding outer electrode 117, to form electrode and get final product, so can reduce production process and increase the reliability of light-emitting diode chip for backlight unit so that electric connection to be provided.
Ask for an interview shown in Fig. 3 A-3G, by the present invention disclosure form the method sketch map of light-emitting component 100.At first, in Fig. 3 A, on growth substrate 111, form n type semiconductor layer 112a, active layer 112b and p type semiconductor layer 112c in regular turn; Then; Remove part n type semiconductor layer 112a, active layer 112b and p type semiconductor layer 112c; Formation has a plurality of to form a plurality of epitaxial structures that insulation system 114 completely cuts off to each other, and in the present embodiment, insulation system 114 reaches the growth substrate of n type semiconductor layer 112a bottom deeply; , in Fig. 3 B, remove the active layer 112b and the p type semiconductor layer 112c of part in each epitaxial structure thereafter, the exposed that makes part n type semiconductor layer 112a in outside; In Fig. 3 C, form n type electrode 113a on the surface that n type semiconductor layer 112a exposes, form p type electrode 113b on the surface of p type semiconductor layer 112c, to form light emitting diode 112; In Fig. 3 D, form insulation system 114 112 of light emitting diodes, insulation system 114 can be only forms along the side of light emitting diode 112, or further covers the surface of p type semiconductor layer 112c; Then form electric connection structure 115; So that each light emitting diode 112 is electrically connected to each other, the connected mode of electric connection structure 115 is the n type electrode 113a of electric connection light emitting diode 112 and the p type electrode 113b of another light emitting diode 112.Or on each light emitting diode 112, do not form electrode; Directly electrically connect each light emitting diode 112 with electric connection structure 115; Electrically connect each light emitting diode 112 in the light-emitting diode chip for backlight unit 110 with the serial or parallel connection mode; The light-emitting diode chip for backlight unit 110 that 112 of each light emitting diodes are one another in series to constitute, parallel connection or connection in series-parallel connect; 112 of each light emitting diodes can also be connected becomes single-chip (the Multiple-dies Chip with a plurality of light emitting diodes; MC), cooperating voltage is with single single chip architecture or make up a plurality of single chip architectures to be applied on DC power supply or the AC power after over commutation.Also can in single chip architecture, be electrically connected each light emitting diode 112 for comprising the state of Hui Shi electric bridge (bridge circuit), to be applied on the AC power.Electric connection structure 115 partly or entirely is formed on the insulation system 114, to completely cut off non-the electrical of electric connection structure 115 conduction that pass through through insulation system 114, forms effectively and insulate, and suffers damage to avoid light emitting diode 112.Accomplish the structure of light-emitting diode chip for backlight unit 110 through above-mentioned steps after, in Fig. 3 E, the side that has electric connection structure 115 at light-emitting diode chip for backlight unit 110 is coated with layer of cloth 120; In the opposite side formation reflector 130 of insulating barrier 120 with respect to light-emitting diode chip for backlight unit 110; Or form multilayer and have different refractivity and can reflect, Bragg reflecting layer (Bragg Reflection Layer) for example by light-emitting diode chip for backlight unit 110 irradiant structures; Thereafter, 130 opposite sides with respect to insulating barrier 120 form knitting layer (bonding layer) 140, for example wafer knitting layer (wafer bonding layer) or metallic bond layer (metal bonding layer) in the reflector; In Fig. 3 F, utilize knitting layer 140 to engage with permanent substrate 150, in the present embodiment, be to engage permanent substrate 150 and knitting layer 140, but also not as limit, wherein permanent substrate 150 is a silicon substrate with the wafer juncture; After accomplishing joint, growth substrate 111 is utilized method thinnings such as grindings, preferably can be thinned to 10 μ m; In Fig. 3 G, utilize modes such as etching afterwards, in growth substrate 111,, form a plurality of passages 116 that connect/penetrate growth substrate 111 with the corresponding position of a plurality of electrodes of light-emitting diode chip for backlight unit 110; Be used in the mode of inserting conductive material in the passage 116, electrically connect the offside of a plurality of electrodes to the growth substrate 111 of light-emitting diode chip for backlight unit 110; At last, on the offside of growth substrate 111, the part of respective channel 116 forms a plurality of outer electrodes 117 of respective leds chip 110 electrodes respectively.
Ask for an interview Fig. 4, be the structural representation of another light-emitting component 200 that the present invention disclosed, in the present embodiment; Label and Fig. 2 components identical; The characteristic of in present embodiment, being narrated with form, have with Fig. 2 in identical characteristic and the occupation mode of element, wherein permanent substrate 250 is an aluminium nitride substrate; Passage 116 connects permanent substrates 250, forms outer electrode 117 at permanent substrate 250 on respect to the apparent surface of light-emitting diode chip for backlight unit 110.
Ask for an interview shown in Figure 5; Be the structural representation of another light-emitting component 300 that the present invention disclosed, in the present embodiment, label and Fig. 2 components identical; The characteristic of in present embodiment, being narrated with form, also have with Fig. 2 in identical characteristic and the occupation mode of element.Light-emitting component 300 comprises light-emitting diode chip for backlight unit 110, inferior carrier (sub-mount) 310 and at least one conduction material 320.Inferior carrier 310 can have at least one circuit; Conduction material 320 is positioned on time carrier 310; Or be present in respectively simultaneously on light-emitting diode chip for backlight unit 110 and the inferior carrier 310; Through conduction material 320 with light-emitting diode chip for backlight unit 110 bonding and/or be fixed on time carrier 310 and light-emitting diode chip for backlight unit 110 is formed with time carrier 310 and electrically connect; Wherein, electric connection can be connected with outer electrode 117 and forms through conducting electricity material 320, and light-emitting diode chip for backlight unit 110 can pass through welding procedure (soldering process) with time carrier 310 or adhesion technology (adhesive process) is fixed to one another and the completion electric connection.When welding procedure; Conduction material 320 can be metal coupling (metal bump); Its material can be alloy (alloy), metal (metal) or scolder (solder); When metal coupling is an alloy bump, or after welding, become under the situation of alloy, the metal coupling that is distributed on light-emitting diode chip for backlight unit 110 and the inferior carrier 310 can be alloy or is respectively single metal; Connect (eutectic soldering) technology formation alloy through merging gold solder altogether, also can pass through isotropic conductive adhesive (isotropically conductive adhesive; ICA) form this metal coupling.In adhesion during technology, then with anisotropy property conducting resinl (the anisotropically conductive adhesive of paste form or form of film; ACA), i.e. anisotropic conductive film (anisotropically conductive film; ACF) etc.Chip is connected with time carrier 310.Under the acting in conjunction that combines pressure and heat, accomplish electrically connect, and make sticker for good and all solidify (cure) and thermally-stabilised.Inferior carrier 310 can be that lead frame (lead frame), large scale are inlayed substrate (mounting substrate) or circuit board (for example PCB circuit board) etc., with the circuit planning that realizes light-emitting component 300 and improve its radiating effect.In the present embodiment, optionally the growth substrate on the light-emitting diode chip for backlight unit 110 111 is removed, and insert or form conductive structure 330, to increase the radiating efficiency of light-emitting component 300 in light-emitting diode chip for backlight unit 110 and 310 in inferior carrier.Moreover, can go up enforcement alligatoring (roughing) step in light-emitting diode chip for backlight unit 110 surfaces after removing growth substrate, make light-emitting diode chip for backlight unit 110 have coarse surface or alligatoring structure, increase the light extraction efficient of light-emitting component 300 thus.Also can in insulation system 114, add fluorescent material (Phosphor) and scattering particles (scattering particle); Wherein the light that sent of the convertible light emitting diode 112 of fluorescent material is for different photochromic to carry out photochromic mixed light; In other words, can the light that light emitting diode 112 is sent be converted into another long light of wavelength.For example transfer blue light to ruddiness and gold-tinted, export to form white light, or other photochromic conversions, also be possible mapping mode.Scattering particles then makes to get into and is issued the outside scattering of light in the insulation system 114, and to increase the light extraction efficiency of light-emitting diode chip for backlight unit 110, the material of scattering particles can be titanium dioxide (TiO
2) and silicon dioxide (SiO
2) and combination, but also not as limit.Fluorescent material (Phosphor) in the above-mentioned insulation system 114 and scattering particles (scattering particle); Can be in the lump or add separately in the insulation system 114; Its composition and concentration can be adjusted according to the product difference, and make one of them and the combination that comprises fluorescent material (Phosphor) and scattering particles (scattering particle) in the insulation system 114.
In addition, ask for an interview shown in Figure 6ly, light-emitting component 300 also can not removed growth substrate 111, and implements alligatoring (roughing) steps in growth substrate 111, makes growth substrate 111 have coarse surface or alligatoring structure, increases the light extraction efficient of light-emitting component 300 thus.Said with Fig. 5; Also add fluorescent material (Phosphor) and scattering particles (scattering particle) in the insulation system 114; The light that wherein sends in the convertible light emitting diode of fluorescent material is for different photochromic to carry out photochromic mixed light; For example transfer blue light to ruddiness or gold-tinted forming white light output, or other photochromic conversions, also be possible mapping mode.Scattering particles then makes to get into and is issued the outside scattering of light in the insulation system 114, and to increase the light extraction efficiency of light-emitting diode chip for backlight unit 110, the material of scattering particles can be titanium dioxide (TiO
2) and silicon dioxide (SiO
2) and combination, but also not as limit.Fluorescent material (Phosphor) in the above-mentioned insulation system 114 and scattering particles (scattering particle); Can be in the lump or add separately in the insulation system 114; Its composition and concentration can be adjusted according to the product difference, and make one of them and the combination that comprises fluorescent material (Phosphor) and scattering particles (scattering particle) in the insulation system 114.
Ask for an interview shown in Fig. 7 A and Fig. 7 B, be another embodiment that sends out element 400 that the present invention disclosed, wherein Fig. 7 A is the vertical view of light emitting diode construction 400, and Fig. 7 B then is the A-A '-A of light emitting diode construction 400 " profile.The electric connection that present embodiment utilization time carrier 310 and light-emitting diode chip for backlight unit are 110 makes light-emitting component 400 rubber-likes electrically dispose possibility.In the present embodiment; 110 of inferior carrier 310 and light-emitting diode chip for backlight unit have at least three electrical contacts 420; Wherein the material of electrical contact 420 can be identical with conduction material 320 or communicates; Can comprise at least two group light emitting diode crowds 411 and 412 in the light-emitting diode chip for backlight unit 110; Wherein light emitting diode crowd 411 and 412 comprises a plurality of light emitting diodes that are one another in series 112 at least; For instance, light emitting diode crowd 411 and 412 can bear and be similar to the forward voltage of root mean square (root mean square) value 120 volts (voltage) and 240 volts, or the forward voltage of peak value (peak value) or root-mean-square value approximate 33 volts or 72 volts.Light emitting diode crowd 411 and 412 can have at least two electrical contacts 420 separately, and perhaps, light emitting diode crowd 411 and 412 can shared electrical contact 420.Can have under the situation of at least two electrical contacts 420 separately light emitting diode crowd 411 and 412; Light emitting diode crowd 411 electrical contact 420 is electrically connected to each other with another electrical contact 420 of light emitting diode crowd 412; To form common node C (common node); Make to be applied on light emitting diode crowd 411 and 412 by transmission in the lump, or have the electrical property feature that other common node structures produce in the signal of telecommunication that applies on the common node C or power supply.In addition, another electrical contact 420 except common node C on the light emitting diode crowd 411 is a Node B, and another electrical contact 420 except common node C is node D on the light emitting diode crowd 412.In present embodiment; Inferior carrier 310 utilizes conduction material 320 to be electrically connected with Node B, C, D respectively; The signal of telecommunication that ', C ', D ' (figure does not show), and to Node B ', C ', D ' apply on inferior carrier 310, to form the Node B corresponding to Node B, C, D or power supply can be transmitted and be applied to corresponding nodes B, C, D.Under this framework; Work as Node B ' and D ' by the source that Connected Power; And node C ' is not when electrically connecting with external power source, and light emitting diode crowd 411 and 412 are the electrical connection state of series connection, and are electrically connected at a utmost point of power supply at C '; And Node B ' and D ' be electrically connected under the situation of another utmost point of power supply, light emitting diode crowd 411 and 412 are parallelly connected electric connection situation.This kind framework is under one chip and encapsulating structure; Can realize the possibility of light emitting diode crowd 411 and 412 multiple electric connections; For instance; When light-emitting component 400 is applied to the electric power system of root-mean-square value at 120 volts, then can carry out electric connection, encapsulation and the lead-in wire of parallel connection to light-emitting component 400, make light-emitting component 400 can be applied to root-mean-square value 120 volts electric power system.And when light-emitting component 400 is applied to the electric power system of root-mean-square value at 240 volts, then can carry out the electric connection of series connection to light-emitting component 400, encapsulation and lead-in wire make light-emitting component 400 can be applied to root-mean-square value 240 volts electric power system.With this; Present embodiment only uses with a kind of light-emitting component 400, then can be applied under the multiple power system architectures, and the point that utilizes time carrier conduct and electric power system to electrically connect; Make the reliability of light-emitting component 400 on using improve; Production cost reduces, and lets the price of end product that the space of optimization is arranged, and then promotes the possibility of light-emitting diode application.What deserves to be mentioned is; Aforesaid light emitting diode crowd 411 and 412 is the part of same light-emitting diode chip for backlight unit 110; But can also substitute light emitting diode crowd 411 and 412 by two light-emitting diode chip for backlight unit 110, and under identical invention spirit, implement present embodiment.
The light-emitting component that the present invention disclosed; Can comprise flip-over type (flip chip) encapsulating structure by the substrate-side bright dipping; Because of the characteristic of flip-chip packaged structure by the substrate-side bright dipping, make its light extraction efficiency not because of the light-emitting zone crested reduces, therefore the electric conducting material between light emitting diode need not be selected transparent material; Also need not to the problem of dwindling the shading area; Or the shape of electric conducting material or technology designs especially, therefore can increase light extraction efficiency, reduce cost, and make the selection of electric conducting material unrestricted.
In addition; The light emitting diode construction that the present invention disclosed except that can the known package mode encapsulating, also can be operated under epitaxy technique; With generally with light emitting diode construction in addition and the very big packaging body of size difference encapsulate and adhere to distinct methods separately; That is the light emitting diode construction that the present invention disclosed can operate under same wafer-level, and therefore said each interelement can have similar size grades (for example in the same order of magnitude, or in 10 1 power); Thus; Not only simplify technology, need not extra again light emitting diode construction be encapsulated, also can with light emitting diode construction that the present invention disclosed separately or several and package carrier encapsulate again; The light emitting diode construction that then the present invention disclosed makes that encapsulation step such as lead-in wire is more simple, therefore makes the encapsulation of light-emitting diode be minimized the reliability of cost and increase packaging body.
Above-mentioned all embodiment, the material of wherein said n type semiconductor layer, p type semiconductor layer and active layer comprises the III-V compounds of group, for example the material of gallium nitride series or gallium phosphide series.Described growth substrate for example is to comprise that at least a material is selected from the group that sapphire, carborundum, gallium nitride and aluminium nitride are formed.Described n type semiconductor layer, p type semiconductor layer and active layer can be the single or multiple lift structure, for example are superlattice structure.In addition, described light-emitting diode chip for backlight unit of the present invention is not limited to be engaged to heat conduction or electrically-conductive backing plate with the direct joint of juncture or through medium, other generation types, and for example growing up with pattern of growth also belongs to scope of the present invention on described growth substrate.
Described electric current dispersion layer comprises transparent metal oxide, for example is tin indium oxide (ITO), metal or metal alloy.Described growth substrate for example is to comprise that at least a transparent material or insulating material are selected from the group that sapphire, carborundum, gallium nitride and aluminium nitride are formed.Described support substrate for example is to comprise that transparent material is selected from the group that gallium phosphide, sapphire, carborundum, gallium nitride and aluminium nitride are formed; Or for example be to comprise that Heat Conduction Material is selected from the group that metal materials such as diamond, diamond-like-carbon (DLC), zinc oxide, gold, silver, aluminium are formed.Described on-monocrystalline engages layer and comprises at least a material and be selected from the group that metal oxide, nonmetal oxide, high molecular polymer, metal or metal alloy are formed.
Cited each embodiment of the present invention in order to explanation the present invention, is not in order to limit scope of the present invention only.Anyone was to the present invention did any showing and be prone to the modification of knowing or change neither disengaging spirit of the present invention and scope.
Claims (30)
1. light-emitting component comprises:
Light-emitting diode chip for backlight unit; Comprise a plurality of light emitting diodes and at least one electric connection layer; Wherein be electrically connected to each other through this electric connection layer between these a plurality of light emitting diodes, wherein each these a plurality of light emitting diode has first semiconductor layer, second semiconductor layer and active layer;
Knitting layer; And
Permanent substrate sees through this knitting layer and engages with this light-emitting diode chip for backlight unit;
Wherein, this electrically connects layer between these a plurality of light emitting diodes and this knitting layer.
2. light-emitting component as claimed in claim 1 has insulation system between these a plurality of light emitting diodes, and has a plurality of scattering particless and/or fluorescent material in this insulation system.
3. light-emitting component as claimed in claim 2; Wherein these a plurality of light emitting diodes send first visible light with first wavelength; This first visible light of the convertible part at least of this fluorescent material in this insulation system is second visible light with second wavelength, and wherein this second wavelength is big than this first wavelength.
4. light-emitting component as claimed in claim 1, wherein these a plurality of light emitting diodes are formed two light emitting diode crowds, have at least one common node among these a plurality of light emitting diode crowds; And see through this common node and form a kind of of following electric connection mode: series, parallel, connection in series-parallel connect, oppositely connection in series-parallel and bridge circuit connection.
5. light-emitting component as claimed in claim 1, wherein the juncture between this light-emitting diode chip for backlight unit and this permanent substrate is one of them or its combination of following juncture: metal bond and wafer engage.
6. light-emitting component as claimed in claim 1 also has the reflector between this light-emitting diode chip for backlight unit and this knitting layer.
7. light-emitting component as claimed in claim 1, wherein this light-emitting diode chip for backlight unit comprises that also a plurality of electrodes are to provide this a plurality of light emitting diode required electric powers.
8. light-emitting component as claimed in claim 7 comprises that also a plurality of outer electrodes electrically connect this light-emitting diode chip for backlight unit.
9. light-emitting component as claimed in claim 8, this light-emitting diode chip for backlight unit has a plurality of passages, and these a plurality of outer electrodes see through these a plurality of electrodes that these a plurality of passages electrically connect this light-emitting diode chip for backlight unit.
10. light-emitting component as claimed in claim 9, wherein, this light-emitting diode chip for backlight unit also has growth substrate, and these a plurality of light emitting diodes are formed at a side of this growth substrate, and these a plurality of outer electrodes are formed at the opposite side of this growth substrate.
11. light-emitting component as claimed in claim 1, wherein this light-emitting diode chip for backlight unit and this permanent substrate have the size of the same order of magnitude.
12. light-emitting component comprises:
Light-emitting diode chip for backlight unit; Comprise a plurality of light emitting diodes, at least two electrodes and at least one electric connection layer; Wherein be electrically connected to each other through this electric connection layer between these a plurality of light emitting diodes, wherein each these a plurality of light emitting diode has first semiconductor layer, second semiconductor layer and active layer; And
Substrate, this light-emitting diode chip for backlight unit are formed at a side of this substrate, and wherein this substrate opposite side then has a plurality of these light-emitting diode chip for backlight unit of outer electrodes electric connection.
13. light-emitting component as claimed in claim 12, wherein this diode chip for backlight unit has coarse surface with respect to the opposite side of this substrate.
14. light-emitting component as claimed in claim 12 wherein has insulation system between these a plurality of light emitting diodes, and has a plurality of scattering particless and/or fluorescent material in this insulation system.
15. light-emitting component as claimed in claim 14; Wherein these a plurality of light emitting diodes send first visible light with first wavelength; This first visible light of the convertible part at least of this fluorescent material in this insulation system is second visible light with second wavelength, and wherein this second wavelength is big than this first wavelength.
16. light-emitting component as claimed in claim 12, wherein these a plurality of light emitting diodes are formed two light emitting diode crowds, have at least one common node among these a plurality of light emitting diode crowds; And see through this common node and form a kind of of following electric connection mode: series, parallel, connection in series-parallel connect, oppositely connection in series-parallel and bridge circuit connection.
17. light-emitting component as claimed in claim 12, wherein this light-emitting diode chip for backlight unit and this substrate have the size of the same order of magnitude.
18. light-emitting component as claimed in claim 12, wherein this light-emitting diode chip for backlight unit comprises that also a plurality of electrodes are to provide this a plurality of light emitting diode required electric powers.
19. light-emitting component as claimed in claim 12, wherein this substrate has a plurality of passages, and these a plurality of outer electrodes see through a plurality of passages and electrically connect this light-emitting diode chip for backlight unit.
20. light-emitting component as claimed in claim 12; Also have insulating barrier, reflector and knitting layer; Wherein this insulating barrier is positioned at the surface of this light-emitting diode chip for backlight unit; This reflector is positioned at the opposite side of this insulating barrier with respect to this light-emitting diode chip for backlight unit, and this knitting layer is formed at the opposite side of this reflector with respect to this insulating barrier, engages this light-emitting diode chip for backlight unit and this substrate.
21. light-emitting component comprises:
Light-emitting diode chip for backlight unit; Comprise a plurality of light emitting diodes and at least one electric connection layer; Wherein see through this electric connection layer between these a plurality of light emitting diodes and be electrically connected to each other, wherein each these a plurality of light emitting diode has first semiconductor layer, second semiconductor layer and active layer; And
Inferior carrier has at least one conduction material and is positioned on this time carrier, through this conduction material this light-emitting diode chip for backlight unit bonding is fixed on this time carrier, and makes this light-emitting diode chip for backlight unit form electric connection.
22. light-emitting component as claimed in claim 21, wherein this time carrier be following one of them: lead frame, large scale are inlayed substrate or circuit board.
23. light-emitting component as claimed in claim 21; Wherein form insulation system between these a plurality of light emitting diodes and electrically connect the electric power of layer conduction via this, and have a plurality of scattering particless and/or fluorescent material in this insulation system with non-between isolated these a plurality of light emitting diodes.
24. light-emitting component as claimed in claim 23; Wherein these a plurality of light emitting diodes send first visible light with first wavelength; This first visible light of the convertible part at least of this fluorescent material in this insulation system is second visible light with second wavelength, and this second wavelength is big than this first wavelength.
25. light-emitting component as claimed in claim 21, wherein these a plurality of light emitting diodes are formed two light emitting diode crowds, have at least one common node among these a plurality of light emitting diode crowds; And see through this common node and form a kind of of following electric connection mode: series, parallel, connection in series-parallel connect, oppositely connection in series-parallel and bridge circuit connection.
26. light-emitting component as claimed in claim 21, wherein this light-emitting diode chip for backlight unit, this substrate and this time carrier have the size of the same order of magnitude.
27. light-emitting component as claimed in claim 21 wherein also forms conductive structure in this time carrier and this light-emitting diode chip for backlight unit.
28. light-emitting component as claimed in claim 21, wherein the juncture between this light-emitting diode chip for backlight unit and this time carrier is one of following juncture or its combination: welding procedure and adhesion technology.
29. light-emitting component as claimed in claim 21, wherein this light-emitting diode chip for backlight unit comprises that also a plurality of electrodes are to provide this a plurality of light emitting diode required electric powers.
30. light-emitting component as claimed in claim 29 also has a plurality of outer electrodes, this light-emitting diode chip for backlight unit has a plurality of passages, and these a plurality of outer electrodes see through these a plurality of electrodes that these a plurality of passages electrically connect this light-emitting diode chip for backlight unit.
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| CN201010506242.XA CN102446948B (en) | 2010-10-12 | 2010-10-12 | Light emitting element |
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| CN201010506242.XA CN102446948B (en) | 2010-10-12 | 2010-10-12 | Light emitting element |
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| CN201410312050.3A Division CN104091815A (en) | 2010-10-12 | 2010-10-12 | Light-emitting component |
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