CN104993793A - Cross-coupled oscillator of silica-based cantilever beam gate MOS transistor with low leakage current - Google Patents
Cross-coupled oscillator of silica-based cantilever beam gate MOS transistor with low leakage current Download PDFInfo
- Publication number
- CN104993793A CN104993793A CN201510380084.0A CN201510380084A CN104993793A CN 104993793 A CN104993793 A CN 104993793A CN 201510380084 A CN201510380084 A CN 201510380084A CN 104993793 A CN104993793 A CN 104993793A
- Authority
- CN
- China
- Prior art keywords
- cantilever beam
- beam grid
- oxide
- nmos tube
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 65
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 238000006880 cross-coupling reaction Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Landscapes
- Micromachines (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
A cross-coupled oscillator of a silica-based cantilever beam gate MOS transistor with low leakage current uses an MOS transistor with cantilever beam gate to replace a traditional MOS transistor. The cross-coupled oscillator of the cantilever beam gate MOS transistor is composed of a cantilever beam gate NMOS transistor, a resonance LC circuit and a constant flow source, which are coupled in a crossed manner. The cantilever beam gate NMOS transistor of the cross-coupled oscillator is manufactured on a P type Si substrate. The gate of the cantilever beam gate MOS transistor is suspended above a gate oxide to form the cantilever beam gate. A pull-down electrode plate is designed under the cantilever beam gate and is grounded. Compared with the traditional MOS transistor, the gate oxide is very thin while the MOS transistor is cut off so that certain gate leakage current will generate because the field intensity in the gate oxide is very large. The cantilever beam gate is suspended while the cantilever beam gate MOS transistor in the cross-coupled oscillator is cut off so that the gate leakage current is reduced greatly because the field intensity in the gate oxide is relative small, thereby effectively reducing the power consumption of the cross-coupled oscillator of the silica-based cantilever beam gate MOS transistor.
Description
Technical field
The present invention proposes silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator, belong to the technical field of microelectromechanical systems.
Background technology
Along with the develop rapidly of modern communications, the high performance oscillator of high stable has become one of critical component of decision systems performance quality.The application of oscillator is very wide, microprocessor, cell phone, tester equipment etc. all will use oscillator, particularly in military surveillance, and radar, in the communications field, need the carrier wave adopting signal source as day by day complicated base-band information, higher requirement is proposed to the stability of oscillator.Oscillator is at very operated at high frequencies, and what chip power-consumption problem can be caused to become is day by day obvious, and too high power consumption can propose higher requirement to the heat radiation of chip, and the performance of chip also can be made to be affected.Design for the low-power consumption of oscillator seems more and more important in the design of very lagre scale integrated circuit (VLSIC).
Cross coupled oscillator is because its superior phase noise performance, and monolithic inductance engenders in bipolar and CMOS technology, makes the cross coupled oscillator based on passive resonance element be able to extensive use.Conventional cross coupled oscillator is in large scale integrated circuit, and power problems is day by day obvious.Namely the present invention is a kind of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator with extremely low grid leakage current based on Si technological design, adopts the structure of movable grid, effectively can reduce grid leakage current thus reduce the power consumption of cross coupled oscillator.
Summary of the invention
Technical problem: the cross coupled oscillator that the object of this invention is to provide a kind of silica-based cantilever beam gate MOSFET, uses silica-based cantilever beam gate MOSFET to substitute traditional MOSFET.Traditional cross coupled oscillator forms stable oscillation stationary vibration latter two metal-oxide-semiconductor alternate conduction and cut-off.Traditional metal-oxide-semiconductor, when ending, because conventional MOS tube grid oxide layer is very thin, causes the field intensity in grid oxic horizon very large, usually can produce certain leakage current.In very lagre scale integrated circuit (VLSIC), the operating power consumption of oscillator can be increased owing to there is such leakage current.This leakage current can be made in the present invention to be effectively reduced.
Technical scheme: one of the present invention silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator is by the first cantilever beam grid NMOS tube, second cantilever beam grid NMOS tube, LC resonant tank and constant-current source composition, cantilever beam grid NMOS tube in this cross coupled oscillator is produced on P type Si substrate, the grid of this first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube relies on being supported and suspended on above gate oxide of anchor district to form cantilever beam grid, the Liang Gemao district polysilicon of cantilever beam grid is produced on gate oxide, cantilever beam grid envisaged underneath has pull-down electrode plate, pull-down electrode plate earthing, the N+ active area source electrode of the first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube to be connected together with lead-in wire by through hole and is connected with constant-current source, constant-current source other end ground connection, the N+ active area drain electrode of the first cantilever beam grid NMOS tube is by anchor district, through hole is connected with the cantilever beam grid of lead-in wire with outstanding second cantilever beam grid NMOS tube, the N+ active area drain electrode of the second cantilever beam grid NMOS tube is by anchor district, through hole is connected with lead-in wire with the cantilever beam grid of the first cantilever beam grid NMOS tube thus forms cross coupling structure, LC resonant tank is connected between the drain electrode of the first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube.
Silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator according to claim 1, it is characterized in that replacing traditional metal-oxide-semiconductor with having cantilever beam grid metal-oxide-semiconductor, cantilever beam grid are the tops being supported and suspended on gate oxide relying on anchor district, form cantilever beam structure, make the threshold voltage of the first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube equal by design, and make the actuation voltage of cantilever beam grid equal with the second cantilever beam grid NMOS tube threshold voltage with the first cantilever beam grid NMOS tube, voltage between grid and pull-down electrode plate is less than threshold voltage, cantilever beam grid are suspended in oxide layer, grid capacitance is now less, when voltage between grid and pull-down electrode plate is greater than threshold voltage, cantilever beam now pulls down to above oxide layer, thus make metal-oxide-semiconductor conducting, gate capacitance also increases, after this silica-based cantilever beam grid metal-oxide-semiconductor cross coupled oscillator produces stable oscillation stationary vibration, first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube alternate conduction and shutoff, when cantilever beam grid metal-oxide-semiconductor turns off, cantilever beam grid suspend, field intensity in grid oxic horizon is smaller, grid leakage current is very little, relative to conventional MOS pipe, when ending, grid oxic horizon is very thin can produce certain grid leakage current, when cantilever beam grid metal-oxide-semiconductor in this cross coupled oscillator turns off, cantilever beam grid suspend, field intensity in grid oxic horizon is smaller, therefore this silica-based cantilever beam grid metal-oxide-semiconductor cross coupled oscillator grid leakage current operationally reduces greatly, thus the power consumption of this silica-based cantilever beam grid metal-oxide-semiconductor cross coupled oscillator is effectively reduced.
Design the threshold voltage of cross-linked cantilever beam grid MOS to pipe equal, the actuation voltage of design cantilever beam grid is equal with the threshold voltage of cantilever beam grid metal-oxide-semiconductor simultaneously.When voltage between grid and drop-down electric-shocking plate is greater than threshold voltage, cantilever beam now pulls down to above oxide layer, thus makes the conducting of cantilever beam grid metal-oxide-semiconductor.Voltage between grid and pull-down electrode plate is less than threshold voltage, and cantilever beam grid are suspended in oxide layer, and the field intensity in grid oxic horizon is smaller, and leakage current reduces greatly.This cross coupled oscillator forms stable oscillation stationary vibration latter two cantilever beam grid metal-oxide-semiconductor alternate conduction and cut-off.For conventional MOS pipe when ending; because grid oxic horizon is very thin; cause the field intensity in grid oxic horizon very large; usually certain DC leakage current can be produced; when cantilever beam grid metal-oxide-semiconductor in the present invention ends; cantilever beam grid suspend, and the field intensity in grid oxic horizon is smaller, and therefore the leakage current of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator reduces greatly.
The preparation method of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator comprises following step:
1) P type Si substrate is prepared;
2) initial oxidation, growth SiO
2layer, as the screen of doping;
3) whole oxide layers of silicon face are removed;
4) end oxide growth.The uniform oxide layer of one deck is grown, as resilient coating at smooth silicon face by thermal oxidation.
5) deposited silicon nitride, then photoetching and etch nitride silicon layer, remain with the silicon nitride in source region, and the silicon nitride of place is removed;
6) field oxidation.High-temperature thermal oxidation is carried out to silicon chip, grown required thick oxide layer in place;
7) remove silicon nitride and basal oxygen sheet, adopt dry etching technology by silicon chip surface silicon nitride and end oxygen all remove.
8) on silicon chip, apply one deck photoresist, photoetching and etching photoresist, remove the photoresist needing to make pull-down electrode plate 8 position.Then deposit one deck Al, removes the Al on photoresist and photoresist, forms pull-down electrode plate;
9) gate oxidation is carried out.Form the high-quality oxide layer of one deck;
10) ion implantation, the threshold voltage of adjustment NMOS;
11) utilize CVD technology deposit spathic silicon, photoetching gate figure and polysilicon lead-in wire figure, by dry etching technology etch polysilicon, retain the polysilicon of the position, anchor district 7 of input lead 4 and cantilever beam grid metal-oxide-semiconductor 6.
12) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retain the sacrifice layer below cantilever beam grid metal-oxide-semiconductor 6;
13) evaporation growth Al;
14) apply photoresist, retain the photoresist above cantilever beam grid metal-oxide-semiconductor 6;
15) anti-carve Al, form cantilever beam grid metal-oxide-semiconductor 6;
16) apply photoresist, photoetching also etches the hand-hole of phosphorus, injects phosphorus, forms the active area 11 of NMOS tube;
17) through hole 12 and lead-in wire 13 is made;
18) discharge PMGI sacrifice layer, form the cantilever beam grid metal-oxide-semiconductor 6 suspended;
The grid of the cantilever beam grid metal-oxide-semiconductor of cross coupled oscillator is not in the present invention directly be attached in oxide layer, but be suspended in the top of oxide layer, form a cantilever beam structure, design the threshold voltage of cross-linked cantilever beam grid MOS to pipe equal, the actuation voltage of design cantilever beam grid is equal with the threshold voltage of cantilever beam grid metal-oxide-semiconductor simultaneously.When voltage between grid and drop-down electric-shocking plate is greater than threshold voltage, cantilever beam now pulls down to above oxide layer, thus makes the conducting of cantilever beam grid metal-oxide-semiconductor.Voltage between grid and pull-down electrode plate is less than threshold voltage, and cantilever beam grid are suspended in oxide layer, and the field intensity in grid oxic horizon is smaller, and leakage current reduces greatly.This cross coupled oscillator formed after stable oscillation stationary vibration when, two cantilever beam grid metal-oxide-semiconductor alternate conduction and cut-off.Relative to conventional MOS pipe when ending; because grid oxic horizon is very thin; cause the field intensity in grid oxic horizon very large; usually certain DC leakage current can be produced; when cantilever beam grid metal-oxide-semiconductor in the present invention ends; cantilever beam grid suspend, and the field intensity in grid oxic horizon is smaller, and therefore the leakage current of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator reduces greatly.
Beneficial effect: cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of the present invention produces stable oscillation stationary vibration latter two cantilever beam grid metal-oxide-semiconductor alternate conduction and cut-off.Relative to conventional MOS pipe when ending, because grid oxic horizon is very thin, causing the field intensity in grid oxic horizon very large, usually can produce certain grid leakage current.When cantilever beam grid metal-oxide-semiconductor in the present invention ends, cantilever beam grid suspend, and the field intensity in grid oxic horizon is smaller, and therefore the grid leakage current of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator reduces greatly.Thus the power consumption of the cantilever beam grid metal-oxide-semiconductor cross coupled oscillator in the present invention is effectively reduced.
Accompanying drawing explanation
Fig. 1 is the vertical view of the present invention's silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator.
Fig. 2 be Fig. 1 silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator P-P ' to profile.
Fig. 3 be Fig. 1 silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator A-A ' to profile.
Fig. 4 is silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator schematic diagram.
Wherein have: the first cantilever beam grid NMOS tube 1, second cantilever beam grid NMOS tube 2, P type Si substrate 3, input lead 4, gate oxide 5, cantilever beam grid 6, anchor district 7, cantilever beam bottom crown 8, through hole 9, lead-in wire 10, drain electrode 12, N+ active area, constant-current source 11, N+ active area source electrode 13, oxide layer 14.
Embodiment
Cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of the present invention is made up of the first cantilever beam grid NMOS tube 1, second cantilever beam grid NMOS tube 2, LC resonant tank, constant-current source, two cantilever beam grid metal-oxide-semiconductors of this cross coupled oscillator are produced on P type Si substrate 3 to make, and its input lead 4 utilizes polysilicon 4 to make.The grid of the NMOS in the present invention is the top being suspended in gate oxide 5, forms cantilever beam grid 6.The Liang Gemao district 7 of cantilever beam grid 6 is produced on gate oxide.Be provided with pull-down electrode plate 8 below cantilever beam, the part of pull-down electrode plate 8 under cantilever beam grid 6 is wrapped up by silicon dioxide layer 5, pull-down electrode plate 8 ground connection.
The grid of the cantilever beam grid metal-oxide-semiconductor of cross coupled oscillator is not in the present invention directly be attached in oxide layer, but is suspended in the top of oxide layer, forms a cantilever beam structure.Design the threshold voltage of cross-linked cantilever beam grid MOS to pipe equal, the actuation voltage of design cantilever beam grid is equal with the threshold voltage of cantilever beam grid metal-oxide-semiconductor simultaneously.When the cantilever beam grid metal-oxide-semiconductor of cross coupled oscillator in the present invention works, the voltage between grid and pull-down electrode plate is less than threshold voltage, and cantilever beam grid are suspended in oxide layer, and grid capacitance is now less.When voltage between grid and pull-down electrode plate is greater than threshold voltage, cantilever beam now pulls down to above oxide layer, thus makes the conducting of cantilever beam grid metal-oxide-semiconductor, and gate capacitance also increases.Relative to conventional MOS pipe when ending; because grid oxic horizon is very thin; cause the field intensity in grid oxic horizon very large; usually certain grid leakage current can be produced; when cantilever beam grid metal-oxide-semiconductor in the present invention ends; cantilever beam grid suspend, and the field intensity in grid oxic horizon is smaller, and therefore the grid leakage current of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator reduces greatly.
The preparation method of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator comprises following step:
1) P type Si substrate 3 is prepared;
2) initial oxidation, growth SiO
2layer, as the screen of doping;
3) whole oxide layers of silicon face are removed;
4) end oxide growth.The uniform oxide layer of one deck is grown, as resilient coating at smooth silicon face by thermal oxidation.
5) deposited silicon nitride, then photoetching and etch nitride silicon layer, remain with the silicon nitride in source region, and the silicon nitride of place is removed;
6) field oxidation.High-temperature thermal oxidation is carried out to silicon chip, grown required thick oxide layer in place;
7) remove silicon nitride and basal oxygen sheet, adopt dry etching technology by silicon chip surface silicon nitride and end oxygen all remove.
8) on silicon chip, apply one deck photoresist, photoetching and etching photoresist, remove the photoresist needing to make pull-down electrode plate 8 position.Then deposit one deck Al, removes the Al on photoresist and photoresist, forms pull-down electrode plate;
9) gate oxidation is carried out.Form the high-quality oxide layer of one deck;
10) ion implantation, the threshold voltage of adjustment NMOS;
11) utilize CVD technology deposit spathic silicon, photoetching gate figure and polysilicon lead-in wire figure, by dry etching technology etch polysilicon, retain the polysilicon of the position, anchor district 7 of input lead 4 and cantilever beam grid metal-oxide-semiconductor 6.
12) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retain the sacrifice layer below cantilever beam grid metal-oxide-semiconductor 6;
13) evaporation growth Al;
14) apply photoresist, retain the photoresist above cantilever beam grid metal-oxide-semiconductor 6;
15) anti-carve Al, form cantilever beam grid metal-oxide-semiconductor 6;
16) apply photoresist, photoetching also etches the hand-hole of phosphorus, injects phosphorus, forms the active area 11 of NMOS tube;
17) through hole 9 and lead-in wire 10 is made;
18) discharge PMGI sacrifice layer, form the cantilever beam grid metal-oxide-semiconductor 6 suspended;
Difference with the prior art of the present invention is:
In the present invention, cross coupled oscillator and the maximum difference of traditional cross coupled oscillator are that the grid of cantilever beam gate MOSFET used is not be directly close to oxide layer, but rely on anchor district be supported and suspended in oxide layer, formed cantilever beam structure.Cross coupled oscillator in the present invention is by two cantilever beam grid metal-oxide-semiconductors, and LC resonant tank, constant-current source is formed.Design the threshold voltage of cross-linked cantilever beam grid MOS to pipe equal, the actuation voltage of design cantilever beam grid is equal with the threshold voltage of cantilever beam grid metal-oxide-semiconductor simultaneously.When the cantilever beam grid metal-oxide-semiconductor of cross coupled oscillator in the present invention works, the voltage between grid and pull-down electrode plate is less than threshold voltage, and cantilever beam grid are suspended in oxide layer, and grid capacitance is now less.When voltage between grid and pull-down electrode plate is greater than threshold voltage, cantilever beam now pulls down to above oxide layer, thus makes the conducting of cantilever beam grid metal-oxide-semiconductor, and gate capacitance also increases.This cantilever beam grid metal-oxide-semiconductor cross coupled oscillator produces stable oscillation stationary vibration latter two cantilever beam grid metal-oxide-semiconductor alternate conduction and cut-off.Relative to conventional MOS pipe when ending; because grid oxic horizon is very thin; cause the field intensity in grid oxic horizon very large; usually certain grid leakage current can be produced; when cantilever beam grid metal-oxide-semiconductor in the present invention ends; cantilever beam grid suspend, and the field intensity in grid oxic horizon is smaller, and therefore the grid leakage current of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator reduces greatly.
Namely the structure meeting above condition is considered as silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of the present invention.
Claims (1)
1. a silica-based low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator, it is characterized in that this oscillator is by the first cantilever beam grid NMOS tube (1), second cantilever beam grid NMOS tube (2), LC resonant tank and constant-current source (11) composition, cantilever beam grid NMOS tube in this cross coupled oscillator is produced on P type Si substrate (3), the grid of these the first cantilever beam grid NMOS tube (1) and the second cantilever beam grid NMOS tube (2) relies on gate oxide (5) top that is supported and suspended in anchor district (7) to form cantilever beam grid (6), the Liang Gemao district (7) of cantilever beam grid (6) is produced on gate oxide (5) with polysilicon, cantilever beam grid (6) envisaged underneath has pull-down electrode plate (8), pull-down electrode plate (8) ground connection, first cantilever beam grid NMOS tube (1) is connected together and is connected with constant-current source (11) by through hole (9) with lead-in wire (10) with N+ active area source electrode (13) of the second cantilever beam grid NMOS tube (2), constant-current source (11) other end ground connection, N+ active area drain electrode (12) of the first cantilever beam grid NMOS tube (1) is by anchor district (7), through hole (9) is connected with the cantilever beam grid (6) of lead-in wire (10) with outstanding second cantilever beam grid NMOS tube (2), N+ active area drain electrode (12) of the second cantilever beam grid NMOS tube (2) is by anchor district (7), through hole (9) is connected with lead-in wire (10) with the cantilever beam grid (6) of the first cantilever beam grid NMOS tube (1) thus forms cross coupling structure, LC resonant tank is connected between the drain electrode (12) of the first cantilever beam grid NMOS tube (1) and the second cantilever beam grid NMOS tube (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510380084.0A CN104993793B (en) | 2015-07-01 | 2015-07-01 | Silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510380084.0A CN104993793B (en) | 2015-07-01 | 2015-07-01 | Silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104993793A true CN104993793A (en) | 2015-10-21 |
| CN104993793B CN104993793B (en) | 2017-12-05 |
Family
ID=54305558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510380084.0A Expired - Fee Related CN104993793B (en) | 2015-07-01 | 2015-07-01 | Silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104993793B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
-
2015
- 2015-07-01 CN CN201510380084.0A patent/CN104993793B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
Non-Patent Citations (3)
| Title |
|---|
| JUZHENG HAN ET AL: "Third-order Intermodulation of an MEMS Clamped-Clamped Beam Capacitive Power Sensor Based on GaAs Technology", 《IEEE SENSOR JOURNAL》 * |
| ZHAQIANG ZHANG ET AL: "Suspended Thermopile for Microwave Power Sensor Based on Buik MEMS and GaAs MMIC Technology", 《IEEE SENSOR JOURNAL》 * |
| ZHIQIANG ZHANG ET AL: "A Directional Inline-Type Millimeter-Wave MEMS Power Sensor for GaAs MMIC Applications", 《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104993793B (en) | 2017-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101359682B (en) | Self-alignment elevated external base area or heterojunction bipolar transistor and manufacturing method thereof | |
| CN103178006B (en) | The method of adjustment threshold voltage of low-temperature polycrystalline silicon transistor valve | |
| CN102916042B (en) | Reverse conducting IGBT device structure and manufacturing method | |
| CN103824883A (en) | Groove MOSFET with terminal voltage-withstanding structure and manufacturing method of groove MOSFET | |
| CN105161491A (en) | Integrated gate driver transistor (IGDT) power device and manufacturing method thereof | |
| CN104993793A (en) | Cross-coupled oscillator of silica-based cantilever beam gate MOS transistor with low leakage current | |
| CN105162419A (en) | Silicon-based low-leakage-current solid strut-beam MOS tube cross coupled oscillator and preparation method | |
| CN104967407A (en) | GaN-based low leakage current cantilever beam switch cross-coupled oscillator and preparation method thereof | |
| CN106328523B (en) | The production method of radio frequency lateral direction bilateral diffusion MOS device | |
| CN104993792A (en) | Cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and preparation method of cross-coupled oscillator | |
| CN104992939B (en) | The ring oscillator and preparation method of gallium nitride base low-leakage current cantilever beam | |
| CN105024688B (en) | The NAND gate of gallium nitride base low-leakage current clamped beam | |
| CN105140227B (en) | The NAND gate of gallium nitride base low-leakage current cantilever beam | |
| CN104157702A (en) | Field charge extraction diode with the soft shutoff property | |
| CN104967437A (en) | Si-based low leakage current cantilever beam gate CMOS (complementary metal oxide semiconductor) transmission gate and preparation method thereof | |
| CN104935298A (en) | RS trigger of silicon-based low-leakage current cantilever grating MOSFET (metal-oxide-semiconductor field effect transistor) NOR gate | |
| CN105141289B (en) | The rest-set flip-flop of the cantilever switch of gallium nitride base low-leakage current four | |
| CN102157356B (en) | The preparation method of the bottom electrode of metal-insulator-metal semiconductor device | |
| CN104953980A (en) | GaN-based low-current-leakage switched capacitor filter provided with cantilever beams and preparation method | |
| CN104954008A (en) | Silicon-based low-leakage-current NOR gate provided with MOS (metal oxide semiconductor) transistor with double movable cantilever beam gates | |
| CN105141259A (en) | Silicon-based low leakage current clamped beam field effect transistor mixer | |
| CN105048999B (en) | Gallium nitride base low-leakage current double cantilever beam switchs the rest-set flip-flop of nor gate | |
| CN104935300A (en) | RS trigger of silicon-based low-leakage-current four-cantilever-beam movable-gate MOS (Metal Oxide Semiconductor) transistor | |
| CN104993819B (en) | The ring oscillator and preparation method of gallium nitride base low-leakage current clamped beam | |
| CN105024648A (en) | Silicon-based low-leakage-current frequency mixer with cantilever field effect tubes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 211134 Jiangsu province Nanjing city Jiangning District Tangshan street community community cemetery No. 57 Applicant after: Southeast University Address before: 211189 Jiangsu Road, Jiangning District, Southeast University, No. 2, No. Applicant before: Southeast University |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: SOUTHEAST University Address before: 211134 Ping Cemetery No. 57, Heling Community, Tangshan Street, Jiangning District, Nanjing City, Jiangsu Province Patentee before: Southeast University |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171205 |