CN104993793B - Silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator - Google Patents
Silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator Download PDFInfo
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- CN104993793B CN104993793B CN201510380084.0A CN201510380084A CN104993793B CN 104993793 B CN104993793 B CN 104993793B CN 201510380084 A CN201510380084 A CN 201510380084A CN 104993793 B CN104993793 B CN 104993793B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 238000006880 cross-coupling reaction Methods 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
The silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of the present invention replaces traditional metal-oxide-semiconductor with the metal-oxide-semiconductor with cantilever beam grid.Cantilever beam grid metal-oxide-semiconductor cross coupled oscillator is made up of cross-linked cantilever beam grid NMOS tube, resonant LC tank and constant-current source.Cantilever beam grid NMOS tube in the cross coupled oscillator is produced on p-type Si substrates, the grid of the cantilever beam grid metal-oxide-semiconductor is suspended in above gate oxide, form cantilever beam grid, cantilever beam grid envisaged underneath has pull-down electrode plate, pull-down electrode plate earthing, relative to conventional MOS pipe, in cut-off, grid oxic horizon is very thin, the field strength very conference in grid oxic horizon is caused to produce certain grid leakage current, when cantilever beam grid metal-oxide-semiconductor in the cross coupled oscillator turns off, cantilever beam grid are to suspend, field strength in grid oxic horizon is smaller, grid leakage current greatly reduces, so that the power consumption of the silicon substrate cantilever beam grid metal-oxide-semiconductor cross coupled oscillator is effectively reduced.
Description
Technical field
The present invention proposes silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator, belongs to mems
The technical field of system.
Background technology
With the rapid development of modern communicationses, the high performance oscillator of high stable has become decision systems performance quality
One of critical component.The application of oscillator is very wide, microprocessor, cell phone, and tester equipment etc. will use oscillator,
Particularly in military surveillance, radar, in the communications field, it is necessary to using carrier wave of the signal source as increasingly complicated base-band information,
Higher requirement is proposed to the stability of oscillator.Oscillator can cause chip power-consumption problem to become in very operated at high frequencies
Increasingly apparent, too high power consumption can propose higher requirement to the radiating of chip, also the performance of chip can be made to be affected.For
The design of the low-power consumption of oscillator seems more and more important in the design of super large-scale integration.
Cross coupled oscillator because its superior phase noise performance, and monolithic inductance occur gradually over it is bipolar and
In CMOS technology so that the cross coupled oscillator based on passive resonance element is able to extensive use.Conventional cross-couplings are shaken
Device is swung in large scale integrated circuit, and power problemses are increasingly apparent.The present invention is a kind of based on Si technological designs to have pole
The cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of low grid leakage current, using the structure of movable grid, can effectively be reduced
Grid leakage current is so as to reducing the power consumption of cross coupled oscillator.
The content of the invention
Technical problem:It is an object of the invention to provide a kind of cross coupled oscillator of silicon substrate cantilever beam gate MOSFET, make
Traditional MOSFET is substituted with silicon substrate cantilever beam gate MOSFET.Traditional cross coupled oscillator formed stable oscillation stationary vibration latter two
Metal-oxide-semiconductor alternate conduction and cut-off.Traditional metal-oxide-semiconductor, because conventional MOS tube grid oxide layer is very thin, causes grid in cut-off
Field strength in oxide layer is very big, it will usually produces certain leakage current.In super large-scale integration, due to as presence
Leakage current can increase the operating power consumption of oscillator.Can be effectively reduced this leakage current in the present invention.
Technical scheme：A kind of silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of the present invention is hanged by first
Arm beam grid NMOS tube, the second cantilever beam grid NMOS tube, LC resonant tanks and constant-current source form, outstanding in the cross coupled oscillator
Arm beam grid NMOS tube is produced on p-type Si substrates, the grid of the first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube
It is to form cantilever beam grid by being supported and suspended on above gate oxide for anchor area, the Liang Gemao areas of cantilever beam grid make of polysilicon
On gate oxide, cantilever beam grid envisaged underneath has a pull-down electrode plate, pull-down electrode plate earthing, the first cantilever beam grid NMOS tube and
The N+ active area source electrodes of second cantilever beam grid NMOS tube are connected together with lead by through hole and are connected with constant-current source, and constant-current source is another
One end is grounded, and the N+ active areas drain electrode of the first cantilever beam grid NMOS tube passes through anchor area, through hole and lead and outstanding second cantilever beam grid
The cantilever beam grid connection of NMOS tube, the N+ active areas drain electrode of the second cantilever beam grid NMOS tube pass through anchor area, through hole and lead and the
The cantilever beam grid of one cantilever beam grid NMOS tube are connected so as to form cross coupling structure, and LC resonant tanks are connected on the first cantilever beam grid
Between the drain electrode of NMOS tube and the second cantilever beam grid NMOS tube.
Silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator according to claim 1, it is characterised in that
Traditional metal-oxide-semiconductor is replaced with cantilever beam grid metal-oxide-semiconductor, cantilever beam grid are to be supported and suspended on the upper of gate oxide by anchor area
Side, cantilever beam structure is formed, the threshold voltage of the first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube is made by design
It is equal, and make the actuation voltage and the first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube threshold voltage phase of cantilever beam grid
Deng the voltage between grid and pull-down electrode plate is less than threshold voltage, and cantilever beam grid are suspended in oxide layer, now
Grid capacitance is smaller, and when the voltage between grid and pull-down electrode plate is more than threshold voltage, cantilever beam now pulls down to oxidation
Above, so that metal-oxide-semiconductor turns on, gate capacitance also increases layer, and the silicon substrate cantilever beam grid metal-oxide-semiconductor cross coupled oscillator produces stable
After vibration, the first cantilever beam grid NMOS tube and the second cantilever beam grid NMOS tube alternate conduction and shut-off, when cantilever beam grid metal-oxide-semiconductor closes
When disconnected, cantilever beam grid are to suspend, and the field strength in grid oxic horizon is smaller, grid leakage current very little, relative to conventional MOS pipe
In cut-off, grid oxic horizon is very thin can produce certain grid leakage current, the cantilever beam grid MOS in the cross coupled oscillator
When pipe turns off, cantilever beam grid are to suspend, and the field strength in grid oxic horizon is smaller, therefore the silicon substrate cantilever beam grid metal-oxide-semiconductor is handed over
The grid leakage current of fork coupled oscillator at work greatly reduces, so that the silicon substrate cantilever beam grid metal-oxide-semiconductor cross-couplings
The power consumption of oscillator is effectively reduced.
Design that cross-linked cantilever beam grid MOS is equal to the threshold voltage of pipe, while design the drop-down electricity of cantilever beam grid
Pressure is equal with the threshold voltage of cantilever beam grid metal-oxide-semiconductor.When the voltage between grid and drop-down electric-shocking plate is more than threshold voltage, hang
Arm beam is now pulled down to above oxide layer, so that cantilever beam grid metal-oxide-semiconductor turns on.Voltage between grid and pull-down electrode plate
Less than threshold voltage, cantilever beam grid are suspended in oxide layer, and the field strength in grid oxic horizon is smaller, and leakage current subtracts significantly
It is small.The cross coupled oscillator forms latter two cantilever beam grid metal-oxide-semiconductor alternate conduction of stable oscillation stationary vibration and cut-off.For conventional MOS
Pipe, because grid oxic horizon is very thin, causes the field strength in grid oxic horizon very big, it will usually to produce certain direct current in cut-off
Leakage current, during cantilever beam grid metal-oxide-semiconductor cut-off in the present invention, cantilever beam grid are to suspend, and the field strength in grid oxic horizon compares
It is small, therefore the leakage current of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator greatly reduces.
The preparation method of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator includes following steps：
1) p-type Si substrates are prepared；
2) initial oxidation, SiO is grown2Layer, the screen layer as doping；
3) whole oxide layers of silicon face are removed；
4) bottom oxide growth.One layer of uniform oxide layer is grown in smooth silicon face by thermal oxide, as cushion.
5) deposited silicon nitride, then photoetching and etch nitride silicon layer retain the silicon nitride of active area, and the silicon nitride of place is gone
Remove；
6) field aoxidizes.High-temperature thermal oxidation is carried out to silicon chip, required thick oxide layer is grown in place；
7) silicon nitride and basal oxygen sheet are removed, is all gone the silicon nitride of silicon chip surface and bottom oxygen using dry etching technology
Remove.
8) one layer of photoresist, photoetching and etching photoresist are coated on silicon chip, removal needs to make the position of pull-down electrode plate 8
Photoresist.Then one layer of Al is deposited, removes the Al on photoresist and photoresist, forms pull-down electrode plate；
9) gate oxidation is carried out.Form the oxide layer of a floor height quality；
10) ion implanting, NMOS threshold voltage is adjusted；
11) CVD technology deposit polycrystalline silicon, photoetching gate figure and polysilicon lead figure are utilized, passes through dry etching technology
Etches polycrystalline silicon, retain the polysilicon of the position of anchor area 7 of input lead 4 and cantilever beam grid metal-oxide-semiconductor 6.
12) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retains the lower section of cantilever beam grid metal-oxide-semiconductor 6
Sacrifice layer；
13) evaporation growth Al；
14) photoresist is coated, retains the photoresist of the top of cantilever beam grid metal-oxide-semiconductor 6；
15) Al is anti-carved, forms cantilever beam grid metal-oxide-semiconductor 6；
16) photoresist, photoetching and the hand-hole for etching phosphorus are coated, injects phosphorus, forms the active area 11 of NMOS tube；
17) through hole 12 and lead 13 are made；
18) PMGI sacrifice layers are discharged, form the cantilever beam grid metal-oxide-semiconductor 6 of suspension；
The grid of the cantilever beam grid metal-oxide-semiconductor of cross coupled oscillator in the present invention is directly attached in oxide layer
, and the top of oxide layer is suspended in, a cantilever beam structure is formed, designs cross-linked cantilever beam grid MOS to pipe
Threshold voltage is equal, at the same design cantilever beam grid actuation voltage and cantilever beam grid metal-oxide-semiconductor threshold voltage it is equal.When grid and
When voltage between drop-down electric-shocking plate is more than threshold voltage, cantilever beam is now pulled down to above oxide layer, so that cantilever beam grid
Metal-oxide-semiconductor turns on.Voltage between grid and pull-down electrode plate is less than threshold voltage, and cantilever beam grid are suspended in oxide layer
Square, the field strength in grid oxic horizon is smaller, and leakage current greatly reduces.The cross coupled oscillator formed stable oscillation stationary vibration after when,
Two cantilever beam grid metal-oxide-semiconductor alternate conductions and cut-off.Relative to conventional MOS pipe in cut-off, because grid oxic horizon is very thin, lead
Cause the field strength in grid oxic horizon very big, it will usually to produce certain DC leakage current, the cantilever beam grid metal-oxide-semiconductor in the present invention is cut
When only, cantilever beam grid are to suspend, and the field strength in grid oxic horizon is smaller, therefore cantilever beam grid metal-oxide-semiconductor cross-couplings vibrate
The leakage current of device greatly reduces.
Beneficial effect：Latter two cantilever beam of the cantilever beam grid metal-oxide-semiconductor cross coupled oscillator generation stable oscillation stationary vibration of the present invention
Grid metal-oxide-semiconductor alternate conduction and cut-off.Relative to conventional MOS pipe in cut-off, because grid oxic horizon is very thin, cause gate oxidation
Field strength in layer is very big, it will usually produces certain grid leakage current.When cantilever beam grid metal-oxide-semiconductor in the present invention ends, cantilever
Beam grid are to suspend, and the field strength in grid oxic horizon is smaller, therefore the grid leakage of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator
Electric current greatly reduces.So that the power consumption of the cantilever beam grid metal-oxide-semiconductor cross coupled oscillator in the present invention is effectively dropped
It is low.
Brief description of the drawings
Fig. 1 is the top view of silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of the present invention.
Fig. 2 be Fig. 1 silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillators P-P ' to profile.
Fig. 3 be Fig. 1 silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillators A-A ' to profile.
Fig. 4 is silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator schematic diagram.
Wherein have：First cantilever beam grid NMOS tube 1, the second cantilever beam grid NMOS tube 2, p-type Si substrates 3, input lead 4,
Gate oxide 5, cantilever beam grid 6, anchor area 7, cantilever beam bottom crown 8, through hole 9, lead 10, constant-current source 11, N+ active areas drain electrode 12,
N+ active areas source electrode 13, oxide layer 14.
Embodiment
The cantilever beam grid metal-oxide-semiconductor cross coupled oscillator of the present invention is by the first cantilever beam grid NMOS tube 1, the second cantilever beam
Grid NMOS tube 2, LC resonant tanks, constant-current source are formed, and two cantilever beam grid metal-oxide-semiconductors of the cross coupled oscillator are to be produced on P
Type Si substrates 3 are made, and its input lead 4 is made using polysilicon 4.The grid of NMOS in the present invention is suspended in gate oxidation
The top of layer 5, form cantilever beam grid 6.The Liang Gemao areas 7 of cantilever beam grid 6 are produced on gate oxide.It is provided with down below cantilever beam
Pulling electrode plate 8, part of the pull-down electrode plate 8 under cantilever beam grid 6 are wrapped up in silicon dioxide layer 5, and pull-down electrode plate 8 is grounded.
The grid of the cantilever beam grid metal-oxide-semiconductor of cross coupled oscillator in the present invention is directly attached in oxide layer
, and the top of oxide layer is suspended in, form a cantilever beam structure.Cross-linked cantilever beam grid MOS is designed to pipe
Threshold voltage is equal, at the same design cantilever beam grid actuation voltage and cantilever beam grid metal-oxide-semiconductor threshold voltage it is equal.In the present invention
In cross coupled oscillator cantilever beam grid metal-oxide-semiconductor work when, the voltage between grid and pull-down electrode plate is less than threshold value
Voltage, cantilever beam grid are suspended in oxide layer, and grid capacitance now is smaller.Electricity between grid and pull-down electrode plate
When pressure is more than threshold voltage, cantilever beam is now pulled down to above oxide layer, so that cantilever beam grid metal-oxide-semiconductor turns on, gate capacitance
Increase.Relative to conventional MOS pipe in cut-off, because grid oxic horizon is very thin, cause the field strength in grid oxic horizon very big, lead to
Certain grid leakage current can often be produced, during cantilever beam grid metal-oxide-semiconductor cut-off in the present invention, cantilever beam grid are to suspend, grid
Field strength in oxide layer is smaller, therefore the grid leakage current of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator greatly reduces.
The preparation method of cantilever beam grid metal-oxide-semiconductor cross coupled oscillator includes following steps：
1) p-type Si substrates 3 are prepared；
2) initial oxidation, SiO is grown2Layer, the screen layer as doping；
3) whole oxide layers of silicon face are removed；
4) bottom oxide growth.One layer of uniform oxide layer is grown in smooth silicon face by thermal oxide, as cushion.
5) deposited silicon nitride, then photoetching and etch nitride silicon layer retain the silicon nitride of active area, and the silicon nitride of place is gone
Remove；
6) field aoxidizes.High-temperature thermal oxidation is carried out to silicon chip, required thick oxide layer is grown in place；
7) silicon nitride and basal oxygen sheet are removed, is all gone the silicon nitride of silicon chip surface and bottom oxygen using dry etching technology
Remove.
8) one layer of photoresist, photoetching and etching photoresist are coated on silicon chip, removal needs to make the position of pull-down electrode plate 8
Photoresist.Then one layer of Al is deposited, removes the Al on photoresist and photoresist, forms pull-down electrode plate；
9) gate oxidation is carried out.Form the oxide layer of a floor height quality；
10) ion implanting, NMOS threshold voltage is adjusted；
11) CVD technology deposit polycrystalline silicon, photoetching gate figure and polysilicon lead figure are utilized, passes through dry etching technology
Etches polycrystalline silicon, retain the polysilicon of the position of anchor area 7 of input lead 4 and cantilever beam grid metal-oxide-semiconductor 6.
12) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retains the lower section of cantilever beam grid metal-oxide-semiconductor 6
Sacrifice layer；
13) evaporation growth Al；
14) photoresist is coated, retains the photoresist of the top of cantilever beam grid metal-oxide-semiconductor 6；
15) Al is anti-carved, forms cantilever beam grid metal-oxide-semiconductor 6；
16) photoresist, photoetching and the hand-hole for etching phosphorus are coated, injects phosphorus, forms the active area 11 of NMOS tube；
17) through hole 9 and lead 10 are made；
18) PMGI sacrifice layers are discharged, form the cantilever beam grid metal-oxide-semiconductor 6 of suspension；
Difference with the prior art of the present invention is：
The cross coupled oscillator difference maximum with traditional cross coupled oscillator is cantilever used in the present invention
The grid of beam gate MOSFET is not to abut directly in oxide layer, but being supported and suspended in oxide layer by anchor area,
Form cantilever beam structure.Cross coupled oscillator in the present invention is by two cantilever beam grid metal-oxide-semiconductors, LC resonant tanks, constant-current source
Form.Design that cross-linked cantilever beam grid MOS is equal to the threshold voltage of pipe, at the same design cantilever beam grid actuation voltage and
The threshold voltage of cantilever beam grid metal-oxide-semiconductor is equal.During the cantilever beam grid metal-oxide-semiconductor work of cross coupled oscillator in the present invention,
Voltage between grid and pull-down electrode plate is less than threshold voltage, and cantilever beam grid are suspended in oxide layer, grid now
Electrode capacitance is smaller.When the voltage between grid and pull-down electrode plate is more than threshold voltage, cantilever beam now pulls down to oxide layer
Above, so that cantilever beam grid metal-oxide-semiconductor turns on, gate capacitance also increases.The cantilever beam grid metal-oxide-semiconductor cross coupled oscillator produces steady
Surely latter two cantilever beam grid metal-oxide-semiconductor alternate conduction and cut-off are vibrated.Relative to conventional MOS pipe in cut-off, due to gate oxidation
Layer is very thin, causes the field strength in grid oxic horizon very big, it will usually produces certain grid leakage current, the cantilever beam in the present invention
When grid metal-oxide-semiconductor ends, cantilever beam grid are to suspend, and the field strength in grid oxic horizon is smaller, therefore cantilever beam grid metal-oxide-semiconductor intersects
The grid leakage current of coupled oscillator greatly reduces.
Meet that the structure of conditions above is considered as the silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross-couplings vibration of the present invention
Device.
Claims (1)
- A kind of 1. silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor cross coupled oscillator, it is characterized in that the oscillator is by the first cantilever Beam grid NMOS tube (1), the second cantilever beam grid NMOS tube (2), LC resonant tanks and constant-current source (11) composition, cross-couplings vibration Cantilever beam grid NMOS tube in device is produced on p-type Si substrates (3), the first cantilever beam grid NMOS tube (1) and the second cantilever beam The grid of grid NMOS tube (2) is to form cantilever beam grid (6) by being supported and suspended on above gate oxide (5) for anchor area (7), cantilever The Liang Gemao areas (7) of beam grid (6) are produced on gate oxide (5) with polysilicon, and cantilever beam grid (6) envisaged underneath has pull-down electrode The N+ of plate (8), pull-down electrode plate (8) ground connection, the first cantilever beam grid NMOS tube (1) and the second cantilever beam grid NMOS tube (2) is active Area's source electrode (13) is connected together with lead (10) by through hole (9) and is connected with constant-current source (11), constant-current source (11) another termination Ground, the N+ active areas drain electrode (12) of the first cantilever beam grid NMOS tube (1) is by anchor area (7), through hole (9) and lead (10) with hanging the Cantilever beam grid (6) connection of two cantilever beam grid NMOS tubes (2), the N+ active areas drain electrode (12) of the second cantilever beam grid NMOS tube (2) It is connected by anchor area (7), through hole (9) and lead (10) with the cantilever beam grid (6) of the first cantilever beam grid NMOS tube (1) so as to be formed Cross coupling structure, LC resonant tanks are connected on the drain electrode of the first cantilever beam grid NMOS tube (1) and the second cantilever beam grid NMOS tube (2) (12) between；Make the threshold voltage of the first cantilever beam grid NMOS tube (1) and the second cantilever beam grid NMOS tube (2) equal by design, and make The actuation voltage of cantilever beam grid (6) and the first cantilever beam grid NMOS tube (1) and second cantilever beam grid NMOS tube (2) threshold voltage phase Deng when the voltage between cantilever beam grid (6) and pull-down electrode plate is less than threshold voltage, cantilever beam grid (6) are suspended in grid oxygen Change above layer (5), grid capacitance is smaller, and cantilever beam grid NMOS tube shut-off, the cantilever beam grid (6) of suspension cause gate oxide (5) In field strength it is smaller, grid leakage current very little.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
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| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
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2015
- 2015-07-01 CN CN201510380084.0A patent/CN104993793B/en not_active Expired - Fee Related
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|---|---|---|---|---|
| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
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| Title |
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| Suspended Thermopile for Microwave Power Sensor Based on Buik MEMS and GaAs MMIC Technology;Zhaqiang Zhang et al;《IEEE SENSOR JOURNAL》;20150430;第15卷(第4期);第2019-2020页 * |
| Third-order Intermodulation of an MEMS Clamped-Clamped Beam Capacitive Power Sensor Based on GaAs Technology;Juzheng Han et al;《IEEE Sensor Journal》;20150421;第15卷(第7期);第3645-3646页 * |
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