CN104752400B - Connected medium layer, its production method and the semiconductor devices including it - Google Patents
Connected medium layer, its production method and the semiconductor devices including it Download PDFInfo
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- CN104752400B CN104752400B CN201310754177.6A CN201310754177A CN104752400B CN 104752400 B CN104752400 B CN 104752400B CN 201310754177 A CN201310754177 A CN 201310754177A CN 104752400 B CN104752400 B CN 104752400B
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Abstract
This application discloses a kind of connected medium layer, its production method and including its semiconductor devices.The connected medium layer includes substrate, and the barrier layer being set in turn on substrate and dielectric layer, and wherein at least one layer of barrier layer is the SiCN layer that N adulterates that SiC layer is formed.The production method includes providing substrate, and sequentially form barrier layer and medium on substrate, and wherein at least one layer of barrier layer is SiCN layers, SiCN layers of the forming step are as follows: forms SiC material layer；And N doping treatment is carried out to SiC material layer and forms SiCN layers.The production method forms the SiCN layer with excellent inoxidizability, corrosion resistance and thermal stability by carrying out N doping processing to the barrier layer SiC.The SiCN layers will not be corroded to form notch by the cleaning reagent in subsequent technique, avoid conductive metal and generate horizontal proliferation in barrier layer, improve the isolation effect of connected medium layer.
Description
Technical field
This application involves semiconductor integrated circuit manufacture technology fields, in particular to a kind of connected medium layer, its system
Make method and the semiconductor devices including it.
Background technique
With the development of super large-scale integration, the RC retardation ratio of integrated circuit metal connected medium layer and crosstalk become system
The principal element that about integrated circuit speed further increases.Replace traditional Al/SiO using Cu/ low-K dielectric2System can make to collect
It is greatly improved at circuit performance.However since diffusion velocity of the Cu in Si and its oxide and most of medium is quite fast,
And Cu once enters and forms deep-level impurity in device architecture, has very strong trap effect to the carrier in device, from
And device performance degeneration is caused even to fail.
Therefore, it needs to increase a diffusion barrier layer between Cu and connected medium layer, to prevent the diffusion of Cu, and requires
Barrier layer has good thermal stability, can form good combination with Cu and dielectric layer.Existing dielectric impedance material master
It to be silica, silicon nitride and nitrogen-oxygen-silicon etc..However the barrier effect of these materials is poor, such as using nitrogen-oxygen-silicon as blocking
When layer, Cu is just begun in the case where 450 DEG C of thermal stress act on and diffuses through barrier layer and enters device architecture.
Silicon carbide has many characteristics, such as high compactness, high reliability and chemical stability, it has also become most has the resistance of application prospect
Barrier material.In the manufacturing process of connected medium layer, after forming barrier layer, need with organosilan and oxygen for reaction
Gas forms interconnection material over the barrier layer.During forming interconnection material, the barrier layer SiC can be partially oxidized generation
SiCO.During the subsequent progress wet-cleaning to interconnection layer, SiCO is easy to cleaned reagent and corrodes to form notch, so that
Conductive metal generates horizontal proliferation in barrier layer, thereby reduces the isolation effect of connected medium layer.
Summary of the invention
The application is intended to provide a kind of connected medium layer, its production method and the semiconductor devices including it, existing to solve
There is the problem of barrier layer SiC present in technology is damaged because of subsequent technique.
To achieve the goals above, according to the one aspect of the application, a kind of connected medium layer, including substrate are provided,
And it is set in turn in the barrier layer on substrate and dielectric layer, barrier layer is one or more layers, and wherein at least one layer of barrier layer is N
Adulterate the SiCN layer that SiC layer is formed.
Further, in the above-mentioned connected medium layer of the application, when connected medium layer includes barrier, N doping
The SiCN layer that SiC layer is formed is arranged close to dielectric layer side.
Further, each to stop when connected medium layer includes barrier in the above-mentioned connected medium layer of the application
Layer is the SiCN layer that N doping SiC layer is formed.
Further, in the above-mentioned connected medium layer of the application, in SiCN layers, the doping of N is 1 × 1018~2 ×
1019atoms/cm3。
Further, in the above-mentioned connected medium layer of the application, barrier layer is one or more layers, and the total thickness on barrier layer
Degree is the 1/10~1/3 of dielectric layer overall thickness adjacent thereto.
According to the another aspect of the application, a kind of production method of connected medium layer is provided, including substrate is provided, and
The step of the step of sequentially forming barrier layer and dielectric layer on substrate, formation barrier layer includes forming one layer of barrier layer or multilayer
Barrier layer, wherein at least one layer of barrier layer is SiCN layers, and SiCN layers of forming step are as follows: forms SiC material layer；And it is right
SiC material layer carries out N doping treatment and forms SiCN layers.
Further, in the production method of the above-mentioned connected medium layer of the application, connected medium layer includes multilayer barrier
When layer, one layer of SiC material layer at least is being formed close to dielectric layer side, and N doping treatment is carried out to the SiC material layer and is formed
SiCN layers.
Further, in the production method of the above-mentioned connected medium layer of the application, connected medium layer includes multilayer barrier
The step of layer, and when each barrier layer is SiCN layer, formation barrier includes: to form one layer of SiC material layer；To being formed
SiC material layer carry out N doping treatment formed SiCN layers；It repeats the above steps, until forming barrier.
Further, in the production method of the above-mentioned connected medium layer of the application, N doping processing uses NH3、N2With
N2H4One of or it is a variety of be used as reaction gas.
Further, in the production method of the above-mentioned connected medium layer of the application, N doping processing is plasma process,
N doping processing step are as follows: be passed through flow be 100~2000sccm reaction gas, control reaction chamber pressure be 0.5~
10torr；Then under conditions of sputtering power is 100~3000W, the temperature of reaction chamber is 300~400 DEG C, to SiC material
Layer carries out N doping and handles 5~60s.
Present invention also provides a kind of semiconductor devices, including substrate, the device region being set on substrate is set to device
Connected medium floor in area, and the conductive layer being set in connected medium layer, wherein connected medium layer is provided by the present application
Connected medium layer.
Using the technical solution of the application, by carrying out N doping processing to the barrier layer SiC, being formed has excellent antioxygen
The SiCN layer of the property changed, corrosion resistance and thermal stability.Therefore, will not be corroded to be formed by the cleaning reagent in subsequent technique for SiCN layers
Notch avoids conductive metal and generates horizontal proliferation in barrier layer, improves the isolation effect of connected medium layer.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below in conjunction with embodiment.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also be intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As described in background technique, there are the barrier layers SiC because of subsequent work in the preparation process of connected medium layer
The problem of skill is damaged, and leading to the isolation effect of connected medium layer reduces, present inventor carries out regarding to the issue above
Research, provides a kind of connected medium layer.The connected medium layer includes substrate, and the barrier layer being set in turn on substrate and
Dielectric layer, wherein barrier layer is one or more layers, and at least one layer of barrier layer is the SiCN layer that N adulterates that SiC layer is formed.
In above-mentioned connected medium layer provided by the present application, N adulterates the crystal structure that will not change SiC, is formed by SiCN
With SiC crystal structure having the same, such as hexagonal lattice structure or cubic lattice structure.Meanwhile doping N atom can occupy
The position of Si atom or C atom in SiC crystal structure, to form Si-N or C=N key.Being formed by Si-N or C=N key has
Very high chemistry bond energy, so that being formed by SiCN layers has excellent inoxidizability, corrosion resistance and thermal stability.Therefore,
The barrier layer SiCN with above structure will not be corroded to form notch by the cleaning reagent in subsequent technique, avoid conductive metal
Horizontal proliferation is generated in barrier layer, improves the isolation effect of connected medium layer.
In the above-mentioned connected medium layer of the application, those skilled in the art can be arranged mutual according to actual process demand
Connect the type and the number of plies on barrier layer in dielectric layer.Wherein barrier layer can be multilayer, such as 1 layer, 2 layers, 3 layers.It is hindered in this multilayer
The material on each barrier layer may be the same or different in barrier, such as can choose SiC, SiCN and Si3N4One of or
It is a variety of.When connected medium layer includes barrier, in a kind of preferred embodiment of the application, N adulterates SiC layer shape
At SiCN layer close to dielectric layer side be arranged.At this point, the SiCN layer close to dielectric layer side can be to the SiC being disposed below
Layer forms protective effect, and SiC layer is avoided to be oxidized.So that the barrier layer with above structure will not be by subsequent technique
Cleaning reagent corrodes to form notch, avoids conductive metal and generates horizontal proliferation in barrier layer, improves connected medium layer
Isolation effect.
In the above-mentioned connected medium layer of the application, when connected medium layer includes barrier, another is preferred
In embodiment, each barrier layer can be disposed as to the SiCN layer that N doping SiC layer is formed.At this point, shape between SiCN layers each
At close interface cohesion, so that the antioxidant effect on the barrier layer with above structure is best.Therefore, there is the resistance of above structure
Barrier more will not be corroded to form notch by the cleaning reagent in subsequent technique, avoid conductive metal and generate in barrier layer laterally
Diffusion, further improves the isolation effect of connected medium layer.
In the above-mentioned connected medium layer of the application, the doping of N is related with actual process condition in SiCN layers, this field
Technical staff can according to concrete technology require setting N doping.In a kind of preferred embodiment of the application, SiCN
The doping of N is 1 × 10 in layer18~2 × 1019atoms/cm3.The antioxygenic property of SiCN layer with above-mentioned doping is most
It is good.If the doping of N is less than 1 × 10 in SiCN layers18atoms/cm3, SiCN layers of antioxygenic property can reduce.If SiCN
The doping of N is greater than 2 × 10 in layer19atoms/cm3, doping N atom, which may result in, generates excessive defect in SiCN layers, very
To making SiCN layers of crystal structure change, and then reduce SiCN layers of antioxygenic property.
In the above-mentioned connected medium layer of the application, those skilled in the art can be according to the type and property of conductive metal
The thickness on the setting such as type and property of matter and dielectric layer barrier layer.In a kind of preferred embodiment of the application, stop
Layer is one or more layers, and the overall thickness on barrier layer is dielectric layer overall thickness (each blocking thickness adjacent thereto adjacent thereto
The summation of degree) 1/10~1/3.Connected medium layer with above-mentioned thickness can prevent conductive metal to dielectric layer and dielectric layer
The device of top is spread, and improves the isolation effect of connected medium layer.
Meanwhile present invention also provides a kind of production methods of connected medium layer.The production method includes: offer substrate,
And barrier layer and dielectric layer are sequentially formed on substrate, wherein the step of forming barrier layer includes forming one layer of barrier layer or more
Layer barrier layer, and at least one layer of barrier layer is SiCN layers, SiCN layers of forming step are as follows: form SiC material layer；And to SiC
Material layer carries out N doping processing, forms SiCN.
In the production method of the above-mentioned connected medium layer of the application, by carrying out N doping processing, shape to SiC material layer
At the SiCN layer with excellent antioxidant performance.The above-mentioned N doping carried out to SiC material layer will not change the crystal knot of SiC
Structure is formed by SiCN and SiC crystal structure having the same, such as hexagonal lattice structure or cubic lattice structure.Meanwhile it mixing
Miscellaneous N atom can occupy the position of Si atom or C atom in SiC crystal structure, to form the Si- with very high chemical bond energy
N or C=N key.Being formed by Si-N or C=N key has very high chemical bond energy, resists so that being formed by SiCN layers with excellent
Oxidisability, corrosion resistance and thermal stability will not be corroded to form notch, so as to avoid leading by the cleaning reagent in subsequent technique
Electric metal generates horizontal proliferation in barrier layer, improves the isolation effect of connected medium layer.Meanwhile the work of the production method
Skill is simple, and only needing slightly to adjust prior art can yield application.
In the above-mentioned formation barrier layer the step of, those skilled in the art can be arranged according to actual process demand to be interconnected
The number of plies on barrier layer in dielectric layer, such as 1 layer, 2 layers, 3 layers.It is a kind of preferred when connected medium layer includes barrier
Embodiment are as follows: at least forming one layer of SiC material layer close to dielectric layer side, and N doping treatment shape is carried out to SiC material layer
At SiCN layers.At this point, the SiCN layer close to dielectric layer side can form protective effect to the SiC layer being disposed below, avoid
SiC layer is oxidized.So that with above structure barrier layer will not be corroded by the cleaning reagent in subsequent technique to be formed it is scarce
Mouthful, it avoids conductive metal and generates horizontal proliferation in barrier layer, improve the isolation effect of connected medium layer.
In the above-mentioned formation barrier layer the step of, when connected medium layer includes barrier, and each barrier layer is
At SiCN layers, formed barrier the step of include: to form one layer of SiC material layer, to be formed by SiC material layer carry out N
Doping treatment forms SiCN layers；It repeats the above steps, until forming barrier.At this point, being formed between SiCN layers each close
Interface cohesion so that with above structure barrier layer antioxidant effect it is best.Therefore, there is the barrier layer of above structure more
It will not be corroded to form notch by the cleaning reagent in subsequent technique, avoid conductive metal and generate horizontal proliferation in barrier layer,
Further improve the isolation effect of connected medium layer.
In the above-mentioned formation barrier layer the step of, those skilled in the art can select N doping according to the prior art
Reaction gas used by handling.In a kind of preferred embodiment of the application, reaction gas used by N doping processing
Selected from NH3、N2And N2H4One of or it is a variety of.When carrying out N doping processing using above-mentioned reaction gas, it will not be formed in doping
SiCN layer in introduce impurity, be formed by SiCN layers of structure uniformly, it is fine and close so that cleaning reagent be difficult to penetrate into it is fine and close
SiCN layers.So that barrier layer is difficult to avoid conductive metal in barrier layer by the cleaning reagent corrosion in subsequent technique
Horizontal proliferation is generated, the isolation effect of connected medium layer is improved.
Other than reaction gas, those skilled in the art can select N doping processing to be adopted according to the prior art
Process.In a kind of preferred embodiment of the application, above-mentioned N doping processing is carried out using plasma process.It adopts
With plasma process carry out N doping be formed by SiCN layers of structure uniformly, it is fine and close so that cleaning reagent is difficult to penetrate into cause
Close SiCN layer.So that barrier layer is difficult to be avoided conductive metal by the cleaning reagent corrosion in subsequent technique and stopped
Horizontal proliferation is generated in layer, improves the isolation effect of connected medium layer.
Certainly, those skilled in the art can also according to the prior art, be arranged plasma process the step of and technique item
Part.In a kind of preferred embodiment of the application, using plasma process carry out nitrogen processing the step of are as follows: being passed through flow is
The reaction gas of 100~2000sccm, the pressure for controlling reaction chamber is 0.5~10torr；Then sputtering power be 100~
3000W, reaction chamber temperature be 300~400 DEG C under conditions of, to SiC material layer carry out N doping handle 5~60s.Using upper
State processing step be formed by SiCN layers of structure uniformly, it is fine and close so that cleaning reagent is difficult to penetrate into fine and close SiCN layer.Into
And barrier layer is made to be difficult to be avoided conductive metal by the cleaning reagent corrosion in subsequent technique and generated laterally expansion in barrier layer
It dissipates, improves the isolation effect of connected medium layer.
In the above-mentioned formation barrier layer the step of, the technique for forming SiC material layer includes but is not limited to use conventional chemical
Vapor deposition, plasma reinforced chemical vapour deposition and sputtering etc..In a kind of optional embodiment of the application, using etc. from
The step of son enhancing chemical vapor deposition process forms SiC material layer are as follows: it is 800~1200 standards that flow is passed through in reaction chamber
The NH of the helium of cc/min, 500~800 standard cubic centimeters per minutes3With 300~500 standard cubic centimeters per minutes
SiH4), in the pressure of high frequency plasma and 1~100torr that the ion generator that radio-frequency power is 800~1200W emits
Under, deposition forms SiC material layer on substrate, and sedimentation time is 10~60 seconds.The SiC material layer knot formed using above-mentioned technique
Structure is fine and close, and good interface cohesion can be formed with substrate.
In the production method of connected medium layer provided by the present application, completion the step of barrier layer is formed on the substrate it
Afterwards, dielectric layer is further formed over the barrier layer, just completes the production of entire connected medium layer.Above-mentioned dielectric layer is low dielectric
The dielectric layer of constant (dielectric constant is less than 1.5), in a kind of optional embodiment of the application, above-mentioned dielectric layer can for
Organosilan is the SiO that precursor is formed2Dielectric layer.Optional organosilan is selected from dimethylsilane, trimethyl silane, tetramethyl
Base silane, diethylsilane, four oxygroup ortho-silicates, tetraethylorthosilicise, octamethyltrisiloxane, four silicon oxygen of prestox ring
One of alkane, tetramethyl-ring tetrasiloxane, methyltriethoxysilane, pheiiyldimetliyl silane and phenyl silane are more
Kind.Forming SiO2During dielectric layer, those skilled in the art can also be according to actual process demand, into presoma
It is passed through doped chemical, such as N and C, to form SiON and SiOC dielectric layer.Formed above-mentioned siliceous oxygen medium layer technique include but
It is not limited to using chemical vapor deposition, evaporation, sputtering etc., above-mentioned technique is state of the art, and details are not described herein.
The step of substrate is provided involved in this application includes: at least to form a kind of structure on substrate, such as brilliant
Body pipe, diode, capacitor, shallow ditch groove structure or interconnection layer etc., so that semiconductor devices area be formed on the substrate.Above-mentioned resistance
Barrier and dielectric layer are formed in the semiconductor devices area of substrate, and play the role of isolation to semiconductor devices.Above-mentioned formation
The technique in semiconductor devices area is state of the art, and those skilled in the art can be according to actual functional capability demand, in substrate
Upper formation semiconductor devices area.
Meanwhile present invention also provides a kind of semiconductor devices, including substrate, the device region being set on substrate, setting
In the connected medium layer on device region, and the conductive layer being set in connected medium layer, wherein connected medium layer is the application
The connected medium layer of offer.
The illustrative embodiments according to the application are described in more detail below.However, these illustrative embodiments
It can be implemented by many different forms, and should not be construed to be limited solely to embodiments set forth herein.It should
These embodiments that are to provide understood are in order to enable disclosure herein is thoroughly and complete, and by these exemplary realities
The design for applying mode is fully conveyed to those of ordinary skill in the art.
Embodiment 1
The production method for present embodiments providing a kind of connected medium layer, comprising the following steps:
SiC material layer is formed on the substrate using plasma reinforced chemical vapour deposition technique, comprising the following steps: anti-
Answer the intracavitary flow that is passed through for the helium of 1000 standard cubic centimeters per minutes, the NH of 800 standard cubic centimeters per minutes3With 500 marks
The SiH of quasi- cc/min4, in the high frequency plasma and 10torr that the ion generator that radio-frequency power is 1000W emits
Under pressure, the SiC material layer that deposition is formed with a thickness of 40nm on substrate, sedimentation time is 25 seconds.
N doping processing is carried out to SiC material layer using plasma process, comprising the following steps: being passed through flow is
The N of 100sccm2, the pressure for controlling chamber is 0.5torr；Then sputtering power is 100W, the temperature of chamber is 400 DEG C
Under the conditions of, N doping is carried out to SiC material layer and handles 5s, the doping for forming N is 1 × 1018atoms/cm3, with a thickness of 40nm
SiCN layer.
SiO is formed using chemical vapor deposition process over the barrier layer2Dielectric layer, process conditions are as follows: with tetramethylsilane
Alkane and oxygen are reaction gas, and the flow of tetramethylsilane is 3000sccm, and the flow of oxygen is 5000sccm, substrate deposition temperature
Degree is 700 DEG C, deposition thickness 300nm.
Embodiment 2
The production method for present embodiments providing a kind of connected medium layer, comprising the following steps:
SiC material layer is formed on the substrate using plasma reinforced chemical vapour deposition technique, comprising the following steps: anti-
Answer the intracavitary flow that is passed through for the helium of 1000 standard cubic centimeters per minutes, the NH of 800 standard cubic centimeters per minutes3With 500 marks
The SiH of quasi- cc/min4, in the high frequency plasma and 10torr that the ion generator that radio-frequency power is 1000W emits
Under pressure, the SiC material layer that deposition is formed with a thickness of 50nm on substrate, sedimentation time is 25 seconds.
Nitrogen processing is carried out to SiC material layer using plasma process, comprising the following steps: being passed through flow is 2000sccm's
NH3, the pressure for controlling chamber is 10torr；Then right under conditions of sputtering power is 3000W, the temperature of chamber is 300 DEG C
SiC material layer carries out N doping and handles 60s, and the doping for forming N is 2 × 1019atoms/cm3, with a thickness of the SiCN layer of 50nm.
SiO is formed using chemical vapor deposition process over the barrier layer2Dielectric layer, process conditions are as follows: with tetramethylsilane
Alkane and oxygen are reaction gas, and the flow of tetramethylsilane is 3000sccm, and the flow of oxygen is 5000sccm, substrate deposition temperature
Degree is 700 DEG C, deposition thickness 150nm.
Embodiment 3
The production method for present embodiments providing a kind of connected medium layer, comprising the following steps:
SiC material layer is formed on the substrate using plasma reinforced chemical vapour deposition technique, comprising the following steps: anti-
Answer the intracavitary flow that is passed through for the helium of 1000 standard cubic centimeters per minutes, the NH of 800 standard cubic centimeters per minutes3With 500 marks
The SiH of quasi- cc/min4, in the high frequency plasma and 10torr that the ion generator that radio-frequency power is 1000W emits
Under pressure, the SiC material layer that deposition is formed with a thickness of 40nm on substrate, sedimentation time is 25 seconds.
Nitrogen processing is carried out to SiC material layer using plasma process, comprising the following steps: being passed through flow is 1000sccm's
N2H4, the pressure for controlling chamber is 5torr；Then right under conditions of sputtering power is 1500W, the temperature of chamber is 350 DEG C
SiC material layer carries out N doping and handles 20s, and the doping for forming N is 1 × 1019atoms/cm3, with a thickness of the SiCN layer of 40nm.
SiO is formed using chemical vapor deposition process over the barrier layer2Dielectric layer, process conditions are as follows: with tetramethylsilane
Alkane and oxygen are reaction gas, and the flow of tetramethylsilane is 3000sccm, and the flow of oxygen is 5000sccm, substrate deposition temperature
Degree is 700 DEG C, deposition thickness 400nm.
Embodiment 4
The production method for present embodiments providing a kind of connected medium layer, comprising the following steps:
First layer SiC material layer, including following step are formed on the substrate using plasma reinforced chemical vapour deposition technique
It is rapid: the NH that flow is the helium of 1000 standard cubic centimeters per minutes, 800 standard cubic centimeters per minutes is passed through in reaction chamber3
With the SiH of 500 standard cubic centimeters per minutes4, radio-frequency power be 1000W ion generator emit high frequency plasma and
Under the pressure of 10torr, the SiC material layer that deposition is formed with a thickness of 27nm on substrate, sedimentation time is 15 seconds.
Stopping is passed through above-mentioned gas, and deposition thickness is the second layer SiC of 18nm on first layer SiC material layer after 120 seconds
Material layer, sedimentation time are 10 seconds, other process conditions are identical as the process conditions of above-mentioned plasma reinforced chemical vapour deposition.
Nitrogen processing is carried out to second layer SiC material layer using plasma process, comprising the following steps: being passed through flow is
The N of 500sccm2H4, the pressure for controlling chamber is 3torr；Then sputtering power is 1000W, the temperature of chamber is 350 DEG C
Under the conditions of, N doping is carried out to SiC material layer and handles 15s, the doping for forming N is 5 × 1018atoms/cm3, with a thickness of 18nm
SiCN layer.
SiO is formed using chemical vapor deposition process over the barrier layer2Dielectric layer, process conditions are as follows: with tetramethylsilane
Alkane and oxygen are reaction gas, and the flow of tetramethylsilane is 3000sccm, and the flow of oxygen is 5000sccm, substrate deposition temperature
Degree is 700 DEG C, deposition thickness 350nm.
Embodiment 5
The production method for present embodiments providing a kind of connected medium layer, comprising the following steps:
SiC material layer is formed on the substrate using plasma reinforced chemical vapour deposition technique, comprising the following steps: anti-
Answer the intracavitary flow that is passed through for the helium of 1000 standard cubic centimeters per minutes, the NH of 800 standard cubic centimeters per minutes3With 500 marks
The SiH of quasi- cc/min4, in the high frequency plasma and 10torr that the ion generator that radio-frequency power is 1000W emits
Under pressure, the SiC material layer that deposition is formed with a thickness of 40nm on substrate, sedimentation time is 25 seconds.
Nitrogen processing is carried out to SiC material layer using plasma process, comprising the following steps: being passed through flow is 2100sccm's
N2H4, the pressure for controlling chamber is 12torr；Then right under conditions of sputtering power is 3200W, the temperature of chamber is 420 DEG C
SiC material layer carries out N doping and handles 65s, and the doping for forming N is 2.2 × 1019atoms/cm3, with a thickness of the SiCN of 40nm
Layer.
SiO is formed using chemical vapor deposition process over the barrier layer2Dielectric layer, process conditions are as follows: with tetramethylsilane
Alkane and oxygen are reaction gas, and the flow of tetramethylsilane is 3000sccm, and the flow of oxygen is 5000sccm, substrate deposition temperature
Degree is 700 DEG C, deposition thickness 500nm.
Comparative example 1
This comparative example provides a kind of production method of connected medium layer, comprising the following steps:
SiC material layer is formed on the substrate using plasma reinforced chemical vapour deposition technique, comprising the following steps: anti-
Answer the intracavitary flow that is passed through for the helium of 1000 standard cubic centimeters per minutes, the NH of 800 standard cubic centimeters per minutes3With 500 marks
The SiH of quasi- cc/min4, in the high frequency plasma and 10torr that the ion generator that radio-frequency power is 1000W emits
Under pressure, the SiC material layer that deposition is formed with a thickness of 45nm on substrate, sedimentation time is 25 seconds.
SiO is formed using chemical vapor deposition process over the barrier layer2Dielectric layer, process conditions are as follows: with tetramethylsilane
Alkane and oxygen are reaction gas, and the flow of tetramethylsilane is 3000sccm, and the flow of oxygen is 5000sccm, substrate deposition temperature
Degree is 700 DEG C, deposition thickness 350nm.
Test: ramp voltage (Vramp) test is carried out to the connected medium layer of embodiment 1 to 5 and comparative example 1, with characterization
The isolation effect reliability of connected medium layer.Vramp test method are as follows: apply ramp voltage on connected medium layer, until should
The breakdown of connected medium layer, the voltage applied on the connected medium layer at this time are breakdown voltage.Dependence test result is asked
It is shown in Table 1
Table 1
| Slope breakdown voltage standard value/V | |
| Embodiment 1 | 4.32 |
| Embodiment 2 | 4.31 |
| Embodiment 3 | 4.35 |
| Embodiment 4 | 4.28 |
| Embodiment 5 | 4.22 |
| Comparative example 1 | 4.02 |
As it can be seen from table 1 the slope breakdown voltage for the connected medium layer that comparative example 1 obtains is 4.02V, lower than industry mark
Quasi- 4.14V.The slope breakdown voltage for the connected medium layer that embodiment 1 to 5 obtains has been more than work between 4.22~4.32V
The 4.14V of industry standard.
It can be seen from the above description that the application the above embodiments realize following technical effect: by right
The barrier layer SiC carries out N doping processing, forms the SiCN layer that there is excellent inoxidizability, corrosion resistance and thermal stability to make.
Therefore, it will not be corroded to form notch by the cleaning reagent in subsequent technique for SiCN layers, avoid conductive metal and produced in barrier layer
Raw horizontal proliferation, improves the isolation effect of connected medium layer.
The above is only preferred embodiment of the present application, are not intended to limit this application, for those skilled in the art
For member, various changes and changes are possible in this application.Within the spirit and principles of this application, it is made it is any modification,
Equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of connected medium layer, including substrate, and the barrier layer being set in turn on the substrate and dielectric layer, the resistance
Barrier is one or more layers, which is characterized in that at least one layer of barrier layer is the SiCN layer that N adulterates that SiC layer is formed, described
SiCN has crystal structure identical with the SiC；The barrier layer is one or more layers, and the overall thickness on the barrier layer is
The 1/10~1/3 of the dielectric layer overall thickness adjacent thereto.
2. connected medium layer according to claim 1, which is characterized in that the SiCN layer that the N doping SiC layer is formed is close
The dielectric layer side setting.
3. connected medium layer according to claim 1, which is characterized in that the connected medium layer includes barrier
When, each barrier layer is the SiCN layer that N doping SiC layer is formed.
4. connected medium layer according to claim 1, which is characterized in that in SiCN layers described, the doping of N is 1 ×
1018~2 × 1019atoms/cm3。
5. a kind of production method of connected medium layer, including provide substrate, and sequentially form over the substrate barrier layer and
The step of dielectric layer, the step of forming the barrier layer includes forming barrier layer described in one layer of barrier layer or multilayer, special
Sign is that at least one layer of barrier layer is SiCN layers, SiCN layers of the forming step are as follows:
Form SiC material layer；And
N doping treatment is carried out to the SiC material layer and forms SiCN layers, and the overall thickness on the barrier layer is institute adjacent thereto
State the 1/10~1/3 of dielectric layer overall thickness.
6. production method according to claim 5, which is characterized in that when the connected medium layer includes barrier,
One layer of SiC material layer at least is being formed close to the dielectric layer side, and N doping treatment is carried out to the SiC material layer and is formed
SiCN layers.
7. production method according to claim 6, which is characterized in that the connected medium layer includes barrier, and
When each barrier layer is SiCN layers, formed barrier the step of include:
Form one layer of SiC material layer；
To be formed by SiC material layer carry out N doping treatment formed it is SiCN layers described；
It repeats the above steps, until forming barrier layer described in multilayer.
8. production method according to claim 5, which is characterized in that the N doping processing uses NH3、N2And N2H4In
It is one or more to be used as reaction gas.
9. production method according to claim 8, which is characterized in that the N doping processing is plasma process, described
N doping processing step are as follows: be passed through the reaction gas that flow is 100~2000sccm, the pressure for controlling reaction chamber is 0.5
~10torr；Then under conditions of sputtering power is 100~3000W, the temperature of reaction chamber is 300~400 DEG C, to described
SiC material layer carries out N doping and handles 5~60s.
10. a kind of semiconductor devices, including substrate, the device region being set on the substrate are set on the device region
Connected medium layer, and the conductive layer being set in the connected medium layer, which is characterized in that the connected medium layer is right
It is required that connected medium layer described in any one of 1 to 4.
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