CN103646967B - A kind of groove type Schottky diode structure and preparation method thereof - Google Patents
A kind of groove type Schottky diode structure and preparation method thereof Download PDFInfo
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- CN103646967B CN103646967B CN201310574660.6A CN201310574660A CN103646967B CN 103646967 B CN103646967 B CN 103646967B CN 201310574660 A CN201310574660 A CN 201310574660A CN 103646967 B CN103646967 B CN 103646967B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000011133 lead Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910000510 noble metal Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- -1 aluminum copper silicon Chemical compound 0.000 description 3
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- 230000008859 change Effects 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of groove type Schottky diode structure and preparation method thereof, and described groove type Schottky diode structure at least includes: the substrate of the first conduction type；Multiple groove structures, the dielectric layer including the multiple grooves being formed in described substrate, being incorporated into respectively this flute surfaces and the conductive material in being filled in each this groove；Wherein, the substrate surface between adjacent two groove structures includes cancave cambered surface；Metal-semiconductor compounds, is formed at described substrate surface；Front electrode layer, is covered in described metal-semiconductor compounds and groove structure surface.The present invention passes through process modification, and the schottky barrier layer of substrate surface includes cancave cambered surface structure, substantially increases compared with conventional plane-shaped structure area, thus effectively reduces forward voltage drop VF, improves device performance.The structure of the present invention and preparation method are simple, and effect is notable, it is adaptable to commercial production.
Description
Technical field
The present invention relates to a kind of semiconductor device and preparation method thereof, particularly relate to a kind of groove type Schottky diode structure and
Its preparation method.
Background technology
Along with the development of semiconductor technology, power device as a kind of new device, be widely used in disk drive,
The fields such as automotive electronics.Power device is required to bear bigger voltage, electric current and power termination.And existing MOS is brilliant
The devices such as body pipe cannot meet the demand, and therefore, in order to meet the needs of application, various power devices become focus of attention.
It is positive pole that existing Schottky diode is usually noble metal (gold, silver, aluminum, platinum etc.), with N-type semiconductor as negative pole,
The metal-semiconductor device utilizing the potential barrier formed on the two contact surface to have rectification characteristic and to make.Because N-type semiconductor is deposited
At substantial amounts of electronics, in noble metal only have minimal amount of free electron, so electronics just from the N-type semiconductor that concentration is high to
The noble metal that concentration is low spreads.Obviously, noble metal there is no hole, the most there is not hole from metal to N-type semiconductor
Diffusion motion.Along with electronics is constantly diffused into noble metal from N-type semiconductor, N-type semiconductor sheet electron concentration is gradually lowered,
Surface electroneutrality is destroyed, and is then formed for potential barrier, and its direction of an electric field is that N-type semiconductor is towards noble metal.But make at this electric field
Under with, the electronics in noble metal also can produce from noble metal to the drift motion of N-type semiconductor, thus weakens due to diffusion
The electric field moved and formed.When behind the space-charge region setting up one fixed width, electric float shifting movement that electric field causes and concentration are not
Reach relative balance with the electrons spread motion caused, just define Schottky barrier.
Visible, Schottky diode is the majority carrier device that rectification characteristic based on metal and semiconductor contact is operated,
There is the features such as forward voltage drop is low, reverse recovery current is little, switching speed is fast, noise coefficient is little, low in energy consumption, the most extensively should
For fields such as Switching Power Supply, converter, drivers.
Conventional groove type Schottky diode structure is not as it is shown in figure 1, in order to be conducive to illustrating, in figure, each layer thickness is by reality
Ratio is drawn, and the metal level carrying on the back crystalline substance is not drawn into.This slot type Schottky diode structure includes its surface of N-type substrate 101(
For plane), N-type heavily doped layer 102, interval be formed in described N-type substrate multiple groove structures 104, be formed at described
The metal silicide 103 on N-type heavily doped layer surface and be made in the front electrode 105 on said structure surface.As seen from the figure,
The Metals-semiconductor contacts of conventional groove-type Schottky diode is plane, and i.e. gold-half contact effective area is the gross area
Deduction groove occupied area.
Owing to the reverse biased of traditional planer schottky diode is relatively low, reverse leakage current is bigger than normal, currently mainly by plough groove type Xiao
Special based diode is substituted.Groove-type Schottky diode when reverse-biased between adjacent trenches depletion region pinch off can occur, thus effectively
Increase reverse biased VR, reduce reverse leakage current IR.
Schottky diode also has very important DC parameter, i.e. forward voltage drop VF, and this parameter is wished the smaller the better, with
Increase forward current.The method of regulation VF is typically realized by accurately regulation Schottky Barriers, but this method compares
Complicated and difficult.If it addition, effective Schottky contact area can be increased in unit are, the most also can effectively reduce VF.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of groove type Schottky diode structure and
Its preparation method, is difficult to the problems such as reduction for solving forward voltage drop VF of groove-type Schottky diode in prior art.
For achieving the above object and other relevant purposes, the present invention provides a kind of groove type Schottky diode structure, at least includes:
The substrate of the first conduction type；
Multiple groove structures, the dielectric layer including the multiple grooves being formed in described substrate, being incorporated into respectively this flute surfaces, with
And it is filled in the conductive material in each this groove；Wherein, the substrate surface between adjacent two groove structures includes cancave cambered surface；
Metal-semiconductor compounds, is formed at described substrate surface；
Front electrode layer, is covered in described metal-semiconductor compounds and groove structure surface.
As a kind of preferred version of the groove type Schottky diode structure of the present invention, also include the heavy doping of the first conduction type
Layer, is formed at described underlayer surface, and its thickness is more than the thickness of described metal-semiconductor compounds.
As a kind of preferred version of the groove type Schottky diode structure of the present invention, described first conduction type is N-type conduction
Type or P-type conduction type.
As a kind of preferred version of the groove type Schottky diode structure of the present invention, the width of described cancave cambered surface is adjacent two
Between groove structure the 30%～100% of width.
Further, the width of described cancave cambered surface is between adjacent two groove structures the 70%～90% of width.
As a kind of preferred version of the groove type Schottky diode structure of the present invention, described substrate be silicon substrate, germanium silicon substrate,
Germanium substrate or III-V compounds of group substrate；Described dielectric layer is SiO2, SiON, the one of high K dielectric or combination；Described lead
Electric material is polysilicon, amorphous silicon, the one of metal or combination.
The present invention also provides for the preparation method of a kind of groove type Schottky diode structure, at least comprises the following steps:
1) substrate of the first conduction type is provided, in described substrate, forms multiple spaced groove, in described flute surfaces
Form dielectric layer, and in described groove, deposit conductive material；
2) it is made in there is between adjacent two grooves the mask layer of etching window, by respectively this etching window, described substrate is carried out
Isotropic etching, to etch cancave cambered surface in described substrate surface, then removes described mask layer；
3) in described substrate surface Schottky metal, and itself and described substrate is made to react formation metal by heat-treating methods
Semiconducting compound；
4) front electrode layer is made in said structure surface.
As a kind of preferred version of preparation method of the groove type Schottky diode structure of the present invention, step 2) after also wrap
Include step: described substrate is carried out the first conductive type ion injection, to form the weight of the first conduction type in described underlayer surface
Doped layer.
As a kind of preferred version of preparation method of the groove type Schottky diode structure of the present invention, described first conduction type
For N-type conduction type or P-type conduction type.
As a kind of preferred version of preparation method of the groove type Schottky diode structure of the present invention, the width of described etching window
Degree is between adjacent two groove structures the 30%～100% of width.
As a kind of preferred version of preparation method of the groove type Schottky diode structure of the present invention, described metal semiconductor
Metal in compound includes one or more of Ti, TiN, Al, Au, Ag, Pt, Pb, W, Ni, Co.
The present invention also provides for the preparation method of a kind of groove type Schottky diode structure, at least comprises the following steps:
1) substrate of the first conduction type is provided, is formed in described substrate and there is multiple silicon nitride layer being spaced window, logical
Cross selective oxidation processes and the substrate in respectively this window is carried out thermal oxide, form multiple oxide layers that lower surface is convex globoidal；
2) remove described silicon nitride layer, for mask, described substrate is carried out dry etching with the plurality of oxide layer, with in described lining
The end, is formed multiple spaced groove；
3) remove each this oxide layer, expose the cancave cambered surface surface of substrate between adjacent trenches；
4) conductive material in being incorporated into the dielectric layer of respectively this flute surfaces and being filled in each this groove is produced；
5) in described substrate surface Schottky metal, and itself and described substrate is made to react formation metal by heat-treating methods
Semiconducting compound；
6) front electrode layer is made in said structure surface.
As a kind of preferred version of preparation method of the groove type Schottky diode structure of the present invention, also wrap after step 4)
Include step: described substrate is carried out the first conductive type ion injection, to form the weight of the first conduction type in described underlayer surface
Doped layer.
As a kind of preferred version of preparation method of the groove type Schottky diode structure of the present invention, described first conduction type
For N-type conduction type or P-type conduction type.
As it has been described above, the present invention provides a kind of groove type Schottky diode structure and preparation method thereof, described channel schottky
Diode structure at least includes: the substrate of the first conduction type；Multiple groove structures, multiple including be formed in described substrate
Groove, be incorporated into the dielectric layer of respectively this flute surfaces and be filled in each this groove in conductive material；Wherein, adjacent two
Substrate surface between groove structure includes cancave cambered surface；Metal-semiconductor compounds, is formed at described substrate surface；Front electricity
Pole layer, is covered in described metal-semiconductor compounds and groove structure surface.The present invention passes through process modification, Xiao of substrate surface
Special base barrier layer includes cancave cambered surface structure, substantially increases compared with conventional plane-shaped structure area, thus effectively reduces forward voltage drop
VF, improves device performance.The structure of the present invention and preparation method are simple, and effect is notable, it is adaptable to commercial production.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of a kind of groove type Schottky diode structure of the prior art.
Fig. 2 is shown as the structural representation of the groove type Schottky diode structure of the present invention.
Fig. 3～Fig. 8 is shown as each step of preparation method of the groove type Schottky diode structure in the embodiment of the present invention 2 and is presented
Structural representation.
Fig. 9～Figure 16 be shown as the groove type Schottky diode structure in the embodiment of the present invention 3 preparation method each step institute in
Existing structural representation.
Element numbers explanation
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Refer to Fig. 2～Figure 16.It should be noted that the diagram provided in the present embodiment illustrates the present invention's the most in a schematic way
Basic conception, the most graphic in component count time only display with relevant assembly in the present invention rather than is implemented according to reality, shape and
Size is drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
Embodiment 1
As in figure 2 it is shown, the present embodiment provides a kind of groove type Schottky diode structure, at least include:
The substrate 201 of the first conduction type；
Multiple groove structures, including the multiple grooves being formed in described substrate 201, the dielectric layer that is incorporated into respectively this flute surfaces
203 and be filled in the conductive material 204 in each this groove；Wherein, substrate 201 surface between adjacent two groove structures
Include cancave cambered surface；
Metal-semiconductor compounds 209, is formed at described substrate 201 surface；
Front electrode layer 210, is covered in described metal-semiconductor compounds 209 and groove structure surface.
As example, also include the heavily doped layer 208 of the first conduction type, be formed at described substrate 201 top layer, and its thickness
Thickness more than described metal-semiconductor compounds 209.In the present embodiment, described heavily doped layer 208 be shaped as concave arc shape,
And it is corresponding with the cancave cambered surface on described substrate 201 surface.
Described first conduction type, can be N-type conduction type or P-type conduction type, and in the present embodiment, described first leads
Electricity type is N-type conduction type.
Described substrate 201, can be silicon substrate, germanium silicon substrate, germanium substrate or III-V compounds of group, such as gallium nitride, GaAs
Deng, in the present embodiment, described substrate 201 is silicon substrate, and accordingly, described metal-semiconductor compounds 209 is metallic silicon
Compound.Certainly, all substrates that may be used for making Schottky diode expected from other all should may be used for the present invention, and
It is not limited to enumerated above several.
Described groove structure, its shape, the degree of depth and interval all can be determined according to the actual demand of device.Described dielectric layer 203
For SiO2, SiON, the one of high K dielectric or combination, described conductive material 204 be polysilicon, amorphous silicon, the one of metal
Plant or combination.In the present embodiment, described dielectric layer 203 is SiO2Layer, described conductive material 204 is polysilicon.
As example, the width of described cancave cambered surface is between adjacent two groove structures the 30%～100% of width.At the present embodiment
In, the width of described cancave cambered surface is between adjacent two groove structures the 70%～90% of width, and, the top of described cancave cambered surface
It is not less than the top of described groove structure.
Described front electrode layer 210, is covered in described metal-semiconductor compounds 209 and groove structure surface, and its material is permissible
One or combination for aluminum, aluminum bronze, aluminum copper silicon, titanium, nickel, silver etc..
The schottky barrier layer of the substrate surface of the groove type Schottky diode structure of the present embodiment includes arcs of recesses structure, compared with
Conventional plane-shaped structure area substantially increases, thus effectively reduces forward voltage drop VF, improves device performance.
Embodiment 2
As shown in Fig. 3～Fig. 8, the present embodiment provide a kind of groove type Schottky diode structure preparation method, at least include with
Lower step:
As shown in Fig. 3～Fig. 4, first carry out step 1), it is provided that the substrate 201 of the first conduction type, in described substrate 201
The multiple spaced groove 202 of middle formation, forms dielectric layer 203 in described groove 202 surface, and in described groove 202
Deposition conductive material 204.
Described first conduction type, can be N-type conduction type or P-type conduction type, and in the present embodiment, described first leads
Electricity type is P-type conduction type.Described substrate 201, can be silicon substrate, germanium silicon substrate, germanium substrate or III-V compounds of group,
Such as gallium nitride, GaAs etc., in the present embodiment, described substrate 201 is silicon substrate.Described dielectric layer 203 is SiO2、SiON、
The one of high K dielectric or combination, described conductive material 204 is polysilicon, amorphous silicon, the one of metal or combination.At this
In embodiment, described dielectric layer 203 is SiO2Layer, described conductive material 204 is polysilicon.
Specifically, first make in described surface of silicon and there is multiple photoresist layer being spaced etching window, then pass through
The dry etching method described silicon substrate of etching, to a predetermined depth, is formed multiple spaced groove 202, is then sunk by gas phase
Long-pending or thermal oxidation process forms SiO with described groove 202 surface and surface of silicon2Layer is then heavy in described groove 202
Long-pending polysilicon, until filling up described groove 202, finally by etching technics by the polysilicon of described surface of silicon and SiO2
Layer is removed, and retains the polysilicon in groove 202 and SiO2Layer, forms groove structure.
As shown in figures 5 and 6, then carry out step 2), it is made between adjacent two grooves 202 and there is etching window 206
Mask layer 205, by respectively this etching window 206, described substrate 201 is carried out isotropic etching, with in described substrate 201
Surface etch goes out cancave cambered surface 207, then removes described mask layer 205.
As example, described mask layer 205 can be photoresist layer, silicon dioxide layer or silicon nitride layer etc..
Specifically, use wet etching method that described silicon substrate carries out isotropic etching, in the present embodiment, the etching of employing
Liquid be mol ratio be HF and HNO of 6:13Aqueous solution.
As example, the width of described etching window 206 is between adjacent two groove 202 structures the 30%～100% of width.
In the present embodiment, the width of described etching window 206 is between adjacent two groove 202 structures the 70%～90% of width.
After it should be noted that etching completes, need to ensure the top that the top of described cancave cambered surface 207 is not less than described groove structure
Portion.
In the present embodiment, step 2) after further comprise the steps of: described substrate 201 carried out the first conductive type ion injection,
To form the heavily doped layer 208 of the first conduction type in described substrate 201 top layer.In the present embodiment, described heavily doped layer 208
Be shaped as concave arc shape, and corresponding with the cancave cambered surface 207 on described substrate 201 surface.
As it is shown in fig. 7, then carry out step 3), in described substrate 201 surface Schottky metal, and pass through heat treatment
Method make it reaction form metal-semiconductor compounds 209 with described substrate 201.
As example, the metal in described metal-semiconductor compounds 209 include Ti, TiN, Al, Au, Ag, Pt, Pb,
One or more of W, Ni, Co etc..
As shown in Figure 8, finally carry out step 4), make front electrode layer 210 in said structure surface.
As example, deposit metal material in described metal-semiconductor compounds 209 and groove structure surface and form front electrode layer
210, its material can be one or the combination of aluminum, aluminum bronze, aluminum copper silicon, titanium, nickel, silver etc..
Embodiment 3
As shown in Fig. 9～Figure 16, the present embodiment provides the preparation method of a kind of groove type Schottky diode structure, at least includes
Following steps:
As shown in Fig. 9～Figure 10, first carry out step 1), it is provided that the substrate 301 of the first conduction type, in described substrate 301
Middle formation has multiple silicon nitride layer 302 being spaced window 303, by selective oxidation processes in respectively this window 303
Substrate 301 carry out thermal oxide, form multiple oxide layers 304 that lower surface is convex globoidal.
Described first conduction type, can be N-type conduction type or P-type conduction type, and in the present embodiment, described first leads
Electricity type is N-type conduction type.Described substrate 301, can be silicon substrate, germanium silicon substrate, germanium substrate or III-V compounds of group,
Such as gallium nitride, GaAs etc., in the present embodiment, described substrate 301 is silicon substrate.
As shown in figure 11, then carry out step 2), remove described silicon nitride layer 302, with the plurality of oxide layer 304 as mask
Described substrate 301 is carried out dry etching, to form multiple spaced groove in described substrate 301.
As example, wet etching method is used to remove described silicon nitride layer 302.
As shown in figure 12, then carry out step 3), remove respectively this oxide layer 304, expose substrate 301 between adjacent trenches
Cancave cambered surface 306 surface.
As shown in Figure 13～Figure 14, then carry out step 4), produce and be incorporated into the dielectric layer 307 of respectively this flute surfaces and fill
Conductive material 308 in respectively this groove.
As example, described dielectric layer 307 is SiO2, SiON, the one of high K dielectric or combination, described conductive material 308
For polysilicon, amorphous silicon, the one of metal or combination.In the present embodiment, described dielectric layer 307 is SiO2Layer, described
Conductive material 308 is polysilicon.
Specifically, SiO is formed by vapour deposition or thermal oxidation process with described flute surfaces and surface of silicon2Layer, then
Deposit polycrystalline silicon in described groove, until filling up described groove, finally by etching technics by many for described surface of silicon
Crystal silicon and SiO2Layer is removed, and exposes described surface of silicon, retains the polysilicon in groove and SiO2Layer, forms groove structure.
As example, further comprise the steps of: after step 4) and described substrate 301 is carried out the first conductive type ion injection, with
The heavily doped layer 309 of the first conduction type is formed in described substrate 301 top layer.In the present embodiment, described heavily doped layer 309
Be shaped as concave arc shape, and corresponding with the cancave cambered surface 306 on described substrate 301 surface.
As shown in figure 15, then carry out step 5), in described substrate 301 surface Schottky metal, and pass through heat treatment
Method make it reaction form metal-semiconductor compounds 310 with described substrate 301.
As example, the metal in described metal-semiconductor compounds 310 include Ti, TiN, Al, Au, Ag, Pt, Pb,
One or more of W, Ni, Co etc..
As shown in figure 16, finally carry out step 6), make front electrode layer 311 in said structure surface.
As example, deposit metal material in described metal-semiconductor compounds 310 and groove structure surface and form front electrode layer
311, its material can be one or the combination of aluminum, aluminum bronze, aluminum copper silicon, titanium, nickel, silver etc..
The preparation method of the groove type Schottky diode structure of the present embodiment, compared to embodiment 1, saves the most special preparation
The light shield of cancave cambered surface substrate surface, reduce further preparation cost.
As it has been described above, the present invention provides a kind of groove type Schottky diode structure and preparation method thereof, described channel schottky
Diode structure at least includes: the substrate of the first conduction type；Multiple groove structures, multiple including be formed in described substrate
Groove, be incorporated into the dielectric layer of respectively this flute surfaces and be filled in each this groove in conductive material；Wherein, adjacent two
Substrate surface between groove structure includes cancave cambered surface；Metal-semiconductor compounds, is formed at described substrate surface；Front electricity
Pole layer, is covered in described metal-semiconductor compounds and groove structure surface.The present invention passes through process modification, Xiao of substrate surface
Special base barrier layer includes cancave cambered surface structure, substantially increases compared with conventional plane-shaped structure area, thus effectively reduces forward voltage drop
VF, improves device performance.The structure of the present invention and preparation method are simple, and effect is notable, it is adaptable to commercial production.The present invention
Effectively overcome various shortcoming of the prior art and have high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (12)
1. a groove type Schottky diode structure, it is characterised in that at least include:
The substrate of the first conduction type；
Multiple groove structures, the dielectric layer including the multiple grooves being formed in described substrate, being incorporated into respectively this flute surfaces,
And it is filled in the conductive material in each this groove；Wherein, the substrate surface between adjacent two groove structures includes concave arc
Face, the width of described cancave cambered surface is between adjacent two groove structures the 30%～100% of width；
Metal-semiconductor compounds, is formed at described substrate surface；
Front electrode layer, is covered in described metal-semiconductor compounds and groove structure surface.
Groove type Schottky diode structure the most according to claim 1, it is characterised in that: also include the weight of the first conduction type
Doped layer, is formed at described underlayer surface, and its thickness is more than the thickness of described metal-semiconductor compounds.
Groove type Schottky diode structure the most according to claim 1 and 2, it is characterised in that: described first conduction type is
N-type conduction type or P-type conduction type.
Groove type Schottky diode structure the most according to claim 1 and 2, it is characterised in that: the width of described cancave cambered surface is
Between adjacent two groove structures the 70%～90% of width.
Groove type Schottky diode structure the most according to claim 1 and 2, it is characterised in that: described substrate be silicon substrate,
Germanium silicon substrate, germanium substrate or III-V compounds of group substrate；Described dielectric layer is SiO2, SiON, the one of high K dielectric or
Combination；Described conductive material is polysilicon, amorphous silicon, the one of metal or combination.
6. the preparation method of a groove type Schottky diode structure, it is characterised in that: at least comprise the following steps:
1) substrate of the first conduction type is provided, in described substrate, forms multiple spaced groove, in described groove
Surface forms dielectric layer, and deposits conductive material in described groove；
2) it is made in and there is the mask layer of etching window, by respectively this etching window to described substrate between adjacent two grooves
Carry out isotropic etching, to etch cancave cambered surface in described substrate surface, then remove described mask layer, wherein, described
The width of etching window is between adjacent two groove structures the 30%～100% of width；
3) in described substrate surface Schottky metal, and it is made to react formation with described substrate by heat-treating methods
Metal-semiconductor compounds；
4) front electrode layer is made in said structure surface.
The preparation method of groove type Schottky diode structure the most according to claim 6, it is characterised in that: step 2) after
Further comprise the steps of: and described substrate is carried out the first conductive type ion injection, to form the first conductive-type in described underlayer surface
The heavily doped layer of type.
8. according to the preparation method of the groove type Schottky diode structure described in claim 6 or 7, it is characterised in that: described first
Conduction type is N-type conduction type or P-type conduction type.
9. according to the preparation method of the groove type Schottky diode structure described in claim 6 or 7, it is characterised in that: described metal
Metal in semiconducting compound includes one or more of Ti, TiN, Al, Au, Ag, Pt, Pb, W, Ni, Co.
10. the preparation method of a groove type Schottky diode structure, it is characterised in that: at least comprise the following steps:
1) substrate of the first conduction type is provided, is formed in described substrate and there is multiple silicon nitride layer being spaced window,
By selective oxidation processes, the substrate in respectively this window is carried out thermal oxide, form multiple oxidations that lower surface is convex globoidal
Layer；
2) remove described silicon nitride layer, for mask, described substrate is carried out dry etching with the plurality of oxide layer, with in institute
State and substrate is formed multiple spaced groove；
3) remove each this oxide layer, expose the cancave cambered surface surface of substrate between adjacent trenches；
4) conductive material in being incorporated into the dielectric layer of respectively this flute surfaces and being filled in each this groove is produced；
5) in described substrate surface Schottky metal, and it is made to react formation with described substrate by heat-treating methods
Metal-semiconductor compounds；
6) front electrode layer is made in said structure surface.
The preparation method of 11. groove type Schottky diode structure according to claim 10, it is characterised in that: step 4)
Further comprise the steps of: afterwards and described substrate is carried out the first conductive type ion injection, to lead in described underlayer surface formation first
The heavily doped layer of electricity type.
12. according to the preparation method of the groove type Schottky diode structure described in claim 10 or 11, it is characterised in that: institute
Stating the first conduction type is N-type conduction type or P-type conduction type.
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