CN101932200A - Method for producing SMT metal mask plate with novel titanium carbide composite material - Google Patents
Method for producing SMT metal mask plate with novel titanium carbide composite material Download PDFInfo
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- CN101932200A CN101932200A CN 201010231964 CN201010231964A CN101932200A CN 101932200 A CN101932200 A CN 101932200A CN 201010231964 CN201010231964 CN 201010231964 CN 201010231964 A CN201010231964 A CN 201010231964A CN 101932200 A CN101932200 A CN 101932200A
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- titanium carbide
- mounting hole
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Abstract
The invention provides a method for producing an SMT metal mask plate with a novel titanium carbide composite material, relates to the technical field of electronic element surface mount, in particular to a method for producing a high-precision mount hole mask plate with the novel composite material. The method comprises the following steps: using a magnetic field with a magnetic flux of 0.025-0.035Wb and a high voltage electric field to form a crossed electric and magnetic field to excite high-density micro plasma out of high-density metal rake material nano titanium carbide; and enabling the high-density micro plasma to accelerate to fly to target surface under the action of Lorentz force to bombard the target surface at high speed and enable atoms sputtered out of the target surface to comply with the momentum transfer principle, break away from the target surface with high momentum and fly to the surface of the mask plate to deposit a layer of membrane with a thickness of 500-1500 nanometers. The invention has the beneficial effects that the mask plate is plated with a layer of titanium carbide membrane with a thickness of 500-1500 nanometers, so that the surface of the mask plate is bright and rolling of soldering balls on the mask plate can be facilitated when soldering paste printing is carried out.
Description
Technical field
The present invention relates to electronical elements surface mounting technology field, relate in particular to a kind of manufacture method of utilizing advanced composite material (ACM) to make high accuracy mounting hole mask plate.
Background technology
Along with improving constantly of living standard, people, can't dwindle small product size but the perforation that tradition is used inserts the method for electronic component so that carry and put to the pursuit miniaturization day by day of various electric equipment productss again; For the electronic product function is more complete, particularly extensive, high integrated IC has to adopt at the template surface surface mount elements; Traditional electronical elements surface mounts manufacture method mask plate etching facture, mask plate laser cutting method etc., but the method for traditional fabrication mask plate has the following disadvantages: one, mask plate surface be light inadequately, be unfavorable for tin cream on mask plate rolling and when printing mask plate contact with the zero of PCB; Two, traditional its hardness of mask plate is at 370HVB, and fall short of the useful life of common laser mask plate, has only 5-8 ten thousand times; Frequent renewal mask plate is wanted in big in batches production, and production cost increases; Three, mask plate and the absorption pulling force in the tin cream made of conventional method is bigger, and the stripping forming of tin cream is brought inconvenience; Four, the mask plate of conventional method making in the easy residual pores of tin cream, causes steel mesh to need frequent clean after the print solder paste, makes production efficiency not high.
Summary of the invention
The present invention is directed to many deficiencies of above-mentioned prior art, aim to provide the manufacture method of the high and new material mask plate being convenient to mount of a kind of mask plate surface accuracy of producing.
The technical solution adopted for the present invention to solve the technical problems is: the manufacture method of the SMT metal mask plate of novel titanium carbide composite material may further comprise the steps:
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering apparatus, the surge chamber of magnetron sputtering apparatus is vacuumized processing, make the surge chamber of magnetron sputtering apparatus be in 2 * 10
4The vacuum environment of handkerchief;
C) will place the interior mask plate of magnetron sputtering apparatus surge chamber to be heated to 150-200 degree centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.025-0.035Wb magnetic flux with high voltage electric field high-density metal rake thin nano titanium carbide is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the film that target surface flies to the about 500-1500 nanometer of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out annealing in process, the making of novel titanium carbide composite material mask plate has just been finished in cooling.
Below above technical scheme is further elaborated:
Its mounting hole of mask plate that described a step is made is one by the transversal left dead slot part of icepro bellmouth of mask plate one side; The difference in size scope of mounting hole upper and lower surface is 3-30 μ m, and the centre-to-centre spacing of mounting hole and mask plate thickness minimum ratio are 1, and its Hole Wall Roughness of mounting hole is 0.4 μ m.
The mask plate that described a step is made is by stainless steel material and nano titanium carbide is compound makes, and its controllable hardness is 450-500HV.
The invention has the beneficial effects as follows: the mask plate that one, the present invention are made, by nanometer film, make the mask plate surface-brightening to mask plate surface magnetic control sputtering titanium carbide, when helping printing with paste, the rolling of tin sweat(ing) on mask plate; Two, its surface-brightening of mask plate of the present invention's making is smooth, in the time of guaranteeing printing with paste, forms good sealing property between pcb board and the mask plate, so that printing with paste well moulding on PAD; Three, the mask plate of its hardness ratio common stainless steel sheet making of the mask plate of the present invention's making improves 20%-40% (bringing up to 450-500HVB by original 370HVB), intensity and toughness also have raising by a relatively large margin simultaneously, make mask plate wear-resisting not yielding, improve the repeated use number of times of mask plate greatly, promptly improved the useful life of mask plate greatly, the cost of the electronics assembling that has reduced; Four, the mask plate that produces by the sputter of nanometer technology micro-ion, guarantee the smooth no burr of hole wall, be beneficial to the demoulding, reduce mask plate at the residual large-area tin cream of printing hole inwall, thereby reduced wash number, improved assembling production efficiency mask plate.
Description of drawings
Fig. 1 is a manufacture method flow chart of the present invention;
Fig. 2 is the cross-sectional view of invention;
Reference numeral: 1, mask plate; 2, mounting hole.
The invention will be further described below in conjunction with accompanying drawing:
With reference to shown in Figure 1, the preparation method of novel titanium carbide composite material SMT metal mask plate provided by the invention may further comprise the steps:
A) at the mounting hole of mask plate processing for the tin cream of biting, mounting hole penetrates mask plate;
B) mask plate being carried out cleaning treatment, to be placed on the buffering of magnetron sputtering apparatus indoor, the buffering chamber of magnetron sputtering apparatus vacuumized processing, so that the buffering chamber of magnetron sputtering apparatus is in 2 * 104The vacuum environment of handkerchief;
C) will place magnetron sputtering apparatus to cushion indoor mask plate and be heated to 150-200 degree centigrade;
D) magnetic field by 0.025-0.035Wb magnetic flux inspires highdensity micro-plasma with high pressure electric field composition quadrature electromagnetic field with highdensity metal rake thin nano titanium carbide, micro-plasma accelerates to fly to target surface under the effect of Lorentz lorentz's power, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the film that target surface flies to one layer of about 500-1500 nanometer of surface deposition of mask plate with higher kinetic energy;
E) mask plate is carried out annealing in process, the making of novel titanium carbide composite material mask plate has just been finished in cooling.
With reference to shown in Figure 2, be applied to the metal mask plate of SMT, comprise mask plate 1 and be arranged on the mounting hole 2 that is used for installing electronic elements on the mask plate 1 that mounting hole 2 penetrates mask plate 1; Mounting hole 2 is one by the transversal left empty slot part in icicle shape hole of mask plate 1 one side; The difference in size scope of described mask plate mounting hole upper and lower surface is 3-30 μ m.
Still with reference to shown in Figure 2, during the tin slurry, the tin slurry was scraped mounting hole 2 on mounting printing, and mounting hole 2 is one by the transversal left empty slot part in icicle shape hole of mask plate 1 one side; The difference in size scope of described mask plate mounting hole upper and lower surface is 3-30 μ m; So the tin slurry will slowly pour into mounting hole 2 with mounting hole 2 hole walls that certain gradient is arranged, and it is bonding to form mounting hole 2 consistent model and electronic component at PCB; Described mounting hole 2 its Hole Wall Roughness are 0.4 μ m, and the smooth tin that is conducive to of hole wall is starched the demoulding.
Be specific embodiments of the invention below:
Embodiment one
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering apparatus, the surge chamber of magnetron sputtering apparatus is vacuumized processing, make the surge chamber of magnetron sputtering apparatus be in 2 * 10
4The vacuum environment of handkerchief;
C) will place the interior mask plate of magnetron sputtering apparatus surge chamber to be heated to 150 degrees centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.025Wb magnetic flux with high voltage electric field high-density metal rake thin nano titanium carbide is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the film that target surface flies to about 500 nanometers of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out annealing in process, the making of novel titanium carbide composite material mask plate has just been finished in cooling.
The difference in size of its mounting hole upper and lower surface of the mask plate that a step is made is 3 μ m, and the centre-to-centre spacing of mounting hole and mask plate thickness ratio are 3, and its Hole Wall Roughness of mounting hole is 0.4 μ m; By stainless steel material and the compounded mask plate of nano titanium carbide, its controllable hardness is 450HV.
Embodiment two
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering apparatus, the surge chamber of magnetron sputtering apparatus is vacuumized processing, make the surge chamber of magnetron sputtering apparatus be in 2 * 10
4The vacuum environment of handkerchief;
C) will place the interior mask plate of magnetron sputtering apparatus surge chamber to be heated to 175 degrees centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.03Wb magnetic flux with high voltage electric field high-density metal rake thin nano titanium carbide is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the film that target surface flies to about 1000 nanometers of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out annealing in process, the making of novel titanium carbide composite material mask plate has just been finished in cooling.
The difference in size of its mounting hole upper and lower surface of the mask plate that a step is made is 15 μ m, and the centre-to-centre spacing of mounting hole and mask plate thickness ratio are 2, and its Hole Wall Roughness of mounting hole is 0.4 μ m; By stainless steel material and the compounded mask plate of nano titanium carbide, its controllable hardness is 475HV.
Embodiment three
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering apparatus, the surge chamber of magnetron sputtering apparatus is vacuumized processing, make the surge chamber of magnetron sputtering apparatus be in 2 * 10
4The vacuum environment of handkerchief;
C) will place the interior mask plate of magnetron sputtering apparatus surge chamber to be heated to 200 degrees centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.035Wb magnetic flux with high voltage electric field high-density metal rake thin nano titanium carbide is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the film that target surface flies to about 1500 nanometers of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out annealing in process, the making of novel titanium carbide composite material mask plate has just been finished in cooling.
The difference in size of its mounting hole upper and lower surface of the mask plate that a step is made is 30 μ m, and the centre-to-centre spacing of mounting hole and mask plate thickness ratio are 1, and its Hole Wall Roughness of mounting hole is 0.4 μ m; By stainless steel material and the compounded mask plate of nano titanium carbide, its controllable hardness is 500HV.
The announcement of book and instruction according to the above description, those skilled in the art in the invention can also carry out suitable change and modification to above-mentioned execution mode.Therefore, the embodiment that discloses and describe above the present invention is not limited to also should fall in the protection range of claim of the present invention modifications and changes more of the present invention.In addition, although used some specific terms in this specification, these terms do not constitute any restriction to the present invention just for convenience of description.
Claims (3)
1. the manufacture method of the SMT metal mask plate of novel titanium carbide composite material is characterized in that may further comprise the steps:
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering apparatus, the surge chamber of magnetron sputtering apparatus is vacuumized processing, make the surge chamber of magnetron sputtering apparatus be in the vacuum environment of 2 * 104 handkerchiefs;
C) will place the interior mask plate of magnetron sputtering apparatus surge chamber to be heated to 150-200 degree centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.025-0.035Wb magnetic flux with high voltage electric field high-density metal rake thin nano titanium carbide is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the film that target surface flies to the about 500-1500 nanometer of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out annealing in process, the making of novel titanium carbide composite material mask plate has just been finished in cooling.
2. the manufacture method of the SMT metal mask plate of novel titanium carbide composite material according to claim 1 is characterized in that: its mounting hole of mask plate that described a step is made is one by the transversal left dead slot part of icepro bellmouth of mask plate one side; The difference in size scope of mounting hole upper and lower surface is 3-30 μ m, and the centre-to-centre spacing of mounting hole and mask plate thickness minimum ratio are 1, and its Hole Wall Roughness of mounting hole is 0.4 μ m.
3. the manufacture method of the SMT metal mask plate of novel titanium carbide composite material according to claim 1 is characterized in that: the mask plate that described a step is made is by stainless steel material and nano titanium carbide is compound makes, and its controllable hardness is 450-500HV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231964 CN101932200A (en) | 2010-07-20 | 2010-07-20 | Method for producing SMT metal mask plate with novel titanium carbide composite material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231964 CN101932200A (en) | 2010-07-20 | 2010-07-20 | Method for producing SMT metal mask plate with novel titanium carbide composite material |
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| CN101932200A true CN101932200A (en) | 2010-12-29 |
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| CN 201010231964 Pending CN101932200A (en) | 2010-07-20 | 2010-07-20 | Method for producing SMT metal mask plate with novel titanium carbide composite material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117712389A (en) * | 2024-02-18 | 2024-03-15 | 深圳市汉嵙新材料技术有限公司 | Method for producing porous current collector, apparatus for producing porous current collector, electrode, and secondary battery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4803110A (en) * | 1986-09-15 | 1989-02-07 | International Business Machines Corporation | Coated mask for photolithographic construction of electric circuits |
| US20030031936A1 (en) * | 2001-08-09 | 2003-02-13 | Pawitter Mangat | Method for fabricating a thin-membrane stencil mask and method for making a semiconductor device using the same |
-
2010
- 2010-07-20 CN CN 201010231964 patent/CN101932200A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4803110A (en) * | 1986-09-15 | 1989-02-07 | International Business Machines Corporation | Coated mask for photolithographic construction of electric circuits |
| US20030031936A1 (en) * | 2001-08-09 | 2003-02-13 | Pawitter Mangat | Method for fabricating a thin-membrane stencil mask and method for making a semiconductor device using the same |
Non-Patent Citations (1)
| Title |
|---|
| 《天津商学院学报》 20050531 刘杨 TiN、TiNC和TiC薄膜的制备及其性能研究 第17页至第19页 1-3 第25卷, 第3期 2 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117712389A (en) * | 2024-02-18 | 2024-03-15 | 深圳市汉嵙新材料技术有限公司 | Method for producing porous current collector, apparatus for producing porous current collector, electrode, and secondary battery |
| CN117712389B (en) * | 2024-02-18 | 2024-04-16 | 深圳市汉嵙新材料技术有限公司 | Method for producing porous current collector, apparatus for producing porous current collector, electrode, and secondary battery |
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Application publication date: 20101229 |