CN101928926A - Manufacturing method of SMT (Surface Mounting Technology) metal mask plate for chromium nitride advanced composite material - Google Patents
Manufacturing method of SMT (Surface Mounting Technology) metal mask plate for chromium nitride advanced composite material Download PDFInfo
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- CN101928926A CN101928926A CN 201010231981 CN201010231981A CN101928926A CN 101928926 A CN101928926 A CN 101928926A CN 201010231981 CN201010231981 CN 201010231981 CN 201010231981 A CN201010231981 A CN 201010231981A CN 101928926 A CN101928926 A CN 101928926A
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- mounting hole
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Abstract
The invention relates to a manufacturing method of an SMT (Surface Mounting Technology) metal mask plate for a chromium nitride advanced composite material, belonging to the field of surface mounting technology of electronic components, in particular to a manufacturing method of a high-precision surface hole mask plate by using an advanced composite material. A crossed electric and magnetic field formed from a magnetic field with 0.025-0.035 Wb magnetic flux and a high-voltage electric filed excites high-density metal target material nano chromium nitride to produce a high-density micro plasma, the micro plasma speeds up to fly to the target surface under the action of Lorentz force and bombards the target surface at high speed, and thus, atoms sputtered from the target surface follow the momentum transfer principle, are separated from the target surface at high kinetic energy and fly to the surface of the mask plate to deposit a mask of 500-1500 nm or so. The invention has the advantages that the surface of the mask plate manufactured by the method has one chromium nitride mask of 500-1500 nm or so, so that the surface of the mask plate is smooth and bright, and tin beads can roll on the mask plate conveniently during solder-paste printing.
Description
Technical field
The present invention relates to electronical elements surface mounting technology field, relate in particular to a kind of making method of utilizing advanced composite material to make high precision mounting hole mask plate.
Background technology
Along with improving constantly of standard of living, people, can't dwindle small product size but the perforation that tradition is used inserts the method for electronic component so that carry and put to the pursuit miniaturization day by day of various electric equipment productss again; For the electronic product function is more complete, particularly extensive, high integrated IC has to adopt at the template surface surface mount elements; Traditional electronical elements surface mounts making method mask plate etching manufacture method, mask plate laser cutting method etc., but the method for traditional fabrication mask plate has the following disadvantages: one, mask plate surface be light inadequately, be unfavorable for tin cream on mask plate rolling and when printing mask plate contact with the zero of PCB; Two, traditional its hardness of mask plate is at 370HVB, and fall short of the work-ing life of common laser mask plate, has only 5-8 ten thousand times; Frequent renewal mask plate is wanted in big in batches production, and production cost increases; Three, mask plate and the absorption pulling force in the tin cream made of traditional method is bigger, and the stripping forming of tin cream is brought inconvenience; Four, the mask plate of traditional method making in the easy residual pores of tin cream, causes steel mesh to need frequent cleaning after the print solder paste, makes production efficiency not high.
Summary of the invention
The present invention is directed to many deficiencies of above-mentioned prior art, aim to provide the making method of the high and type material mask plate being convenient to mount of a kind of mask plate surface accuracy of producing.
The technical solution adopted for the present invention to solve the technical problems is: the making method of the SMT metal mask plate of chromium nitride advanced composite material may further comprise the steps:
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering equipment, the surge chamber of magnetron sputtering equipment is vacuumized processing, make the surge chamber of magnetron sputtering equipment be in 2 * 10
4The vacuum environment of handkerchief;
C) will place the interior mask plate of magnetron sputtering equipment surge chamber to be heated to 150-200 degree centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.025-0.035Wb magnetic flux with high-voltage electric field high-density metal rake thin nanometer chrome nitride is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the mould that target surface flies to the about 500-1500 nanometer of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out anneal, the making of chromium nitride advanced composite material mask plate has just been finished in cooling.
Below above technical scheme is further elaborated:
Its mounting hole of mask plate that described a step is made is one by the transversal left dead slot part of icepro tapered hole of mask plate one side; The difference in size scope of mounting hole upper and lower surface is 3-30 μ m, and the width between centers of mounting hole and mask plate thickness minimum ratio are 1, and its Hole Wall Roughness of mounting hole is 0.4 μ m.
The mask plate that described a step is made is by stainless material and nanometer chrome nitride is compound makes, and its controllable hardness is 450-500HV.
The invention has the beneficial effects as follows: the mask plate that one, the present invention are made, by nanometer mould, make the mask plate surface-brightening to mask plate surface magnetic control sputtering chromium nitride, when helping printing with paste, the rolling of tin sweat(ing) on mask plate; Two, its surface-brightening of mask plate of the present invention's making is smooth, in the time of guaranteeing printing with paste, forms good sealing property between pcb board and the mask plate, so that printing with paste well moulding on PAD; Three, the mask plate of its hardness ratio common stainless steel sheet making of the mask plate of the present invention's making improves 20%-40% (bringing up to 450-500HVB by original 370HVB), intensity and toughness also have raising by a relatively large margin simultaneously, make mask plate wear-resisting not yielding, improve the repeated use number of times of mask plate greatly, promptly improved the work-ing life of mask plate greatly, the cost of the electronics assembling that has reduced; Four, the mask plate that produces by the sputter of nanotechnology micro-ion, guarantee the smooth no burr of hole wall, be beneficial to the demoulding, reduce mask plate at the residual large-area tin cream of printing hole inwall, thereby reduced wash number, improved assembling production efficiency mask plate.
Description of drawings
Fig. 1 is a making method schema of the present invention;
Fig. 2 is the cross-sectional view of invention;
Reference numeral: 1, mask plate; 2, mounting hole.
The invention will be further described below in conjunction with accompanying drawing:
With reference to shown in Figure 1, the preparation method of chromium nitride advanced composite material (ACM) SMT metal mask plate provided by the invention may further comprise the steps:
A) at the mounting hole of mask plate processing for the tin cream of biting, mounting hole penetrates mask plate;
B) mask plate being carried out cleaning treatment, to be placed on the buffering of magnetron sputtering apparatus indoor, the buffering chamber of magnetron sputtering apparatus vacuumized processing, so that the buffering chamber of magnetron sputtering apparatus is in 2 * 104The vacuum environment of handkerchief;
C) will place magnetron sputtering apparatus to cushion indoor mask plate and be heated to 150-200 degree centigrade;
D) magnetic field by 0.025-0.035Wb magnetic flux inspires highdensity micro-plasma with high pressure electric field composition quadrature electromagnetic field with highdensity metal rake thin nanometer chrome nitride, micro-plasma accelerates to fly to target surface under the effect of Lorentz lorentz's power, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the mould that target surface flies to one layer of about 500-1500 nanometer of surface deposition of mask plate with higher kinetic energy;
E) mask plate is carried out annealing in process, the making of chromium nitride advanced composite material (ACM) mask plate has just been finished in cooling.
With reference to shown in Figure 2, be applied to the metal mask plate of SMT, comprise mask plate 1 and be arranged on the mounting hole 2 that is used for installing electronic elements on the mask plate 1 that mounting hole 2 penetrates mask plate 1; Mounting hole 2 is one by the transversal left empty slot part in icicle shape hole of mask plate 1 one side; The difference in size scope that described mask plate mounts the sky upper and lower surface is 3-30 μ m.
Still with reference to shown in Figure 2, during the tin slurry, the tin slurry was scraped mounting hole 2 on mounting printing, and mounting hole 2 is one by the transversal left empty slot part in icicle shape hole of mask plate 1 one side; The difference in size scope that described mask plate mounts the sky upper and lower surface is 3-30 μ m; So the tin slurry will slowly pour into mounting hole 2 with mounting hole 2 hole walls that certain gradient is arranged, and it is bonding to form mounting hole 2 consistent model and electronic component at PCB; Described mounting hole 2 its Hole Wall Roughness are 0.4 μ m, and the smooth tin that is conducive to of hole wall is starched the demoulding.
Be specific embodiments of the invention below:
Embodiment one
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering equipment, the surge chamber of magnetron sputtering equipment is vacuumized processing, make the surge chamber of magnetron sputtering equipment be in 2 * 10
4The vacuum environment of handkerchief;
C) will place the interior mask plate of magnetron sputtering equipment surge chamber to be heated to 150 degrees centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.025Wb magnetic flux with high-voltage electric field high-density metal rake thin nanometer chrome nitride is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the mould that target surface flies to about 500 nanometers of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out anneal, the making of chromium nitride advanced composite material mask plate has just been finished in cooling.
The difference in size of its mounting hole upper and lower surface of the mask plate that a step is made is 3 μ m, and the width between centers of mounting hole and mask plate thickness ratio are 3, and its Hole Wall Roughness of mounting hole is 0.4 μ m; By stainless material and the compounded mask plate of nanometer chrome nitride, its controllable hardness is 450HV.
Embodiment two
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering equipment, the surge chamber of magnetron sputtering equipment is vacuumized processing, make the surge chamber of magnetron sputtering equipment be in the vacuum environment of 2 * 104 handkerchiefs;
C) will place the interior mask plate of magnetron sputtering equipment surge chamber to be heated to 175 degrees centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.03Wb magnetic flux with high-voltage electric field high-density metal rake thin nanometer chrome nitride is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the mould that target surface flies to about 1000 nanometers of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out anneal, the making of chromium nitride advanced composite material mask plate has just been finished in cooling.
The difference in size of its mounting hole upper and lower surface of the mask plate that a step is made is 15 μ m, and the width between centers of mounting hole and mask plate thickness ratio are 2, and its Hole Wall Roughness of mounting hole is 0.4 μ m; By stainless material and the compounded mask plate of nanometer chrome nitride, its controllable hardness is 475HV.
Embodiment three
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering equipment, the surge chamber of magnetron sputtering equipment is vacuumized processing, make the surge chamber of magnetron sputtering equipment be in the vacuum environment of 2 * 104 handkerchiefs;
C) will place the interior mask plate of magnetron sputtering equipment surge chamber to be heated to 200 degrees centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.035Wb magnetic flux with high-voltage electric field high-density metal rake thin nanometer chrome nitride is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the mould that target surface flies to about 1500 nanometers of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out anneal, the making of chromium nitride advanced composite material mask plate has just been finished in cooling.
The difference in size of its mounting hole upper and lower surface of the mask plate that a step is made is 30 μ m, and the width between centers of mounting hole and mask plate thickness ratio are 1, and its Hole Wall Roughness of mounting hole is 0.4 μ m; By stainless material and the compounded mask plate of nanometer chrome nitride, its controllable hardness is 500HV.
The announcement of book and instruction according to the above description, those skilled in the art in the invention can also carry out suitable change and modification to above-mentioned embodiment.Therefore, the embodiment that discloses and describe above the present invention is not limited to also should fall in the protection domain of claim of the present invention modifications and changes more of the present invention.In addition, although used some specific terms in this specification sheets, these terms do not constitute any restriction to the present invention just for convenience of description.
Claims (3)
1. the making method of the SMT metal mask plate of chromium nitride advanced composite material is characterized in that may further comprise the steps:
A) processing be used to the to bite mounting hole of tin cream on mask plate, mounting hole penetrates mask plate;
B) mask plate is carried out clean and be placed in the surge chamber of magnetron sputtering equipment, the surge chamber of magnetron sputtering equipment is vacuumized processing, make the surge chamber of magnetron sputtering equipment be in 2 * 10
4The vacuum environment of handkerchief;
C) will place the interior mask plate of magnetron sputtering equipment surge chamber to be heated to 150-200 degree centigrade;
D) form crossed electric and magnetic field by the magnetic field of 0.025-0.035Wb magnetic flux with high-voltage electric field high-density metal rake thin nanometer chrome nitride is inspired highdensity micro-plasma, micro-plasma quickens to fly to target surface under the effect of Lorentz force, high-speed bombardment target surface makes the atom that is sputtered out on the target surface follow the momentum transfer principle and breaks away from the mould that target surface flies to the about 500-1500 nanometer of surface deposition one deck of mask plate with higher kinetic energy;
E) mask plate is carried out anneal, the making of chromium nitride advanced composite material mask plate has just been finished in cooling.
2. the making method of the SMT metal mask plate of chromium nitride advanced composite material according to claim 1 is characterized in that: its mounting hole of mask plate that described a step is made is one by the transversal left dead slot part of icepro tapered hole of mask plate one side; The difference in size scope of mounting hole upper and lower surface is 3-30 μ m, and the width between centers of mounting hole and mask plate thickness minimum ratio are 1, and its Hole Wall Roughness of mounting hole is 0.4 μ m.
3. the making method of the SMT metal mask plate of chromium nitride advanced composite material according to claim 1 is characterized in that: the mask plate that described a step is made is by stainless material and nanometer chrome nitride is compound makes, and its controllable hardness is 450-500HV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231981 CN101928926A (en) | 2010-07-20 | 2010-07-20 | Manufacturing method of SMT (Surface Mounting Technology) metal mask plate for chromium nitride advanced composite material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010231981 CN101928926A (en) | 2010-07-20 | 2010-07-20 | Manufacturing method of SMT (Surface Mounting Technology) metal mask plate for chromium nitride advanced composite material |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4803110A (en) * | 1986-09-15 | 1989-02-07 | International Business Machines Corporation | Coated mask for photolithographic construction of electric circuits |
| US20030031936A1 (en) * | 2001-08-09 | 2003-02-13 | Pawitter Mangat | Method for fabricating a thin-membrane stencil mask and method for making a semiconductor device using the same |
| CN1791287A (en) * | 2004-12-17 | 2006-06-21 | 上海广电电子股份有限公司 | Method for manufacturing transparent anode and electrode lead wire of organic luminescent display unit |
| CN101338412A (en) * | 2008-07-23 | 2009-01-07 | 西南交通大学 | Method for preparing of low stress chromium nitride multilayer hard film |
| CN201207756Y (en) * | 2008-05-12 | 2009-03-11 | 东莞泉声电子有限公司 | Raised type printed circuit board |
-
2010
- 2010-07-20 CN CN 201010231981 patent/CN101928926A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4803110A (en) * | 1986-09-15 | 1989-02-07 | International Business Machines Corporation | Coated mask for photolithographic construction of electric circuits |
| US20030031936A1 (en) * | 2001-08-09 | 2003-02-13 | Pawitter Mangat | Method for fabricating a thin-membrane stencil mask and method for making a semiconductor device using the same |
| CN1791287A (en) * | 2004-12-17 | 2006-06-21 | 上海广电电子股份有限公司 | Method for manufacturing transparent anode and electrode lead wire of organic luminescent display unit |
| CN201207756Y (en) * | 2008-05-12 | 2009-03-11 | 东莞泉声电子有限公司 | Raised type printed circuit board |
| CN101338412A (en) * | 2008-07-23 | 2009-01-07 | 西南交通大学 | Method for preparing of low stress chromium nitride multilayer hard film |
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Application publication date: 20101229 |