ATE408173T1 - Fluorierte polymere, die zur verwendung als photoresists geeignet sind, und mikrolithographieverfahren - Google Patents

Fluorierte polymere, die zur verwendung als photoresists geeignet sind, und mikrolithographieverfahren

Info

Publication number
ATE408173T1
ATE408173T1 AT03788676T AT03788676T ATE408173T1 AT E408173 T1 ATE408173 T1 AT E408173T1 AT 03788676 T AT03788676 T AT 03788676T AT 03788676 T AT03788676 T AT 03788676T AT E408173 T1 ATE408173 T1 AT E408173T1
Authority
AT
Austria
Prior art keywords
photoresists
polymers suitable
fluorinated polymers
unit derived
repeat unit
Prior art date
Application number
AT03788676T
Other languages
English (en)
Inventor
Andrew Feiring
Frank Schadt
William Farnham
Jerald Feldman
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Application granted granted Critical
Publication of ATE408173T1 publication Critical patent/ATE408173T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/26—Tetrafluoroethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/12—Hydrolysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/20—Copolymer characterised by the proportions of the comonomers expressed as weight or mass percentages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
AT03788676T 2002-08-19 2003-08-19 Fluorierte polymere, die zur verwendung als photoresists geeignet sind, und mikrolithographieverfahren ATE408173T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40437402P 2002-08-19 2002-08-19

Publications (1)

Publication Number Publication Date
ATE408173T1 true ATE408173T1 (de) 2008-09-15

Family

ID=31888358

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03788676T ATE408173T1 (de) 2002-08-19 2003-08-19 Fluorierte polymere, die zur verwendung als photoresists geeignet sind, und mikrolithographieverfahren

Country Status (10)

Country Link
US (1) US7312287B2 (de)
EP (1) EP1551886B1 (de)
JP (1) JP4578971B2 (de)
KR (1) KR20050062540A (de)
CN (1) CN1675262A (de)
AT (1) ATE408173T1 (de)
AU (1) AU2003259951A1 (de)
DE (1) DE60323521D1 (de)
TW (1) TW200403257A (de)
WO (1) WO2004016664A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004016664A1 (en) * 2002-08-19 2004-02-26 E.I. Du Pont De Nemours And Company Fluorinated polymers useful as photoresists, and processes for microlithography
JP5560854B2 (ja) * 2010-03-31 2014-07-30 Ｊｓｒ株式会社 感放射線性樹脂組成物およびそれに用いる重合体
US9388009B2 (en) * 2010-11-24 2016-07-12 Asahi Glass Co., Ltd. Sliding member for sheet-shaped recording material detachment, seal ring for automobile, and seal ring and sliding member for industrial gas compressor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229473A (en) * 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
JP4034896B2 (ja) * 1997-11-19 2008-01-16 松下電器産業株式会社 レジスト組成物及びこれを用いたパターン形成方法
JPH11265067A (ja) * 1998-01-16 1999-09-28 Jsr Corp 感放射線性樹脂組成物
JP4327360B2 (ja) * 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ホトレジスト、ポリマーおよびマイクロリソグラフィの方法
CN1227569C (zh) * 1999-05-04 2005-11-16 纳幕尔杜邦公司 氟化聚合物,光刻胶和用于显微光刻的方法
KR100535149B1 (ko) * 1999-08-17 2005-12-07 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP4240786B2 (ja) * 1999-09-17 2009-03-18 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2003532765A (ja) * 2000-05-05 2003-11-05 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジスト用コポリマーおよびそのための方法
EP1246013A3 (de) * 2001-03-30 2003-11-19 E.I. Du Pont De Nemours And Company Photoresists, Polymere und Verfahren für die Mikrolithographie
US6737215B2 (en) * 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
WO2004016664A1 (en) * 2002-08-19 2004-02-26 E.I. Du Pont De Nemours And Company Fluorinated polymers useful as photoresists, and processes for microlithography

Also Published As

Publication number Publication date
KR20050062540A (ko) 2005-06-23
CN1675262A (zh) 2005-09-28
AU2003259951A1 (en) 2004-03-03
EP1551886B1 (de) 2008-09-10
EP1551886A1 (de) 2005-07-13
US20060166129A1 (en) 2006-07-27
US7312287B2 (en) 2007-12-25
EP1551886A4 (de) 2007-11-14
TW200403257A (en) 2004-03-01
DE60323521D1 (de) 2008-10-23
JP2005536589A (ja) 2005-12-02
WO2004016664A1 (en) 2004-02-26
JP4578971B2 (ja) 2010-11-10

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