Ni et al., 2019 - Google Patents

Breakdown Mechanism of AlGaN/GaN-based HFET With Carbon-doped GaN Buffer Layer grown on Si substrate

Ni et al., 2019

Document ID
7578956767196361775
Author
Ni Y
Li L
He L
Yang L
Publication year
Publication venue
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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In this paper, we evaluated the effect of carbon doping on the breakdown mechanism of GaN buffer as well as the material and electrical properties of AlGaN/GaN HFETs. The introduction of carbon will slightly increase the surface roughness and degrade the 2DEG …
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