Piotrowicz et al., 2024 - Google Patents

Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the Al X Ga 1-XN/AlN/GaN Heterojunction

Piotrowicz et al., 2024

Document ID
15505022992622152470
Author
Piotrowicz C
Malbert N
Torrengo S
Olivier A
Mohamad B
Publication year
Publication venue
2024 IEEE European Solid-State Electronics Research Conference (ESSERC)

External Links

Snippet

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) based on a bi- dimensional electron gas (2DEG) are essential components in many electronic applications. A crucial aspect involves minimizing the sheet resistance of the 2DEG to reduce the total on …
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