Feng et al., 2010 - Google Patents

Low voltage nanoelectromechanical switches based on silicon carbide nanowires

Feng et al., 2010

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Document ID
5345779147677937398
Author
Feng X
Matheny M
Zorman C
Mehregany M
Roukes M
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We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially …
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