Svensson et al., 2011 - Google Patents

Carbon nanotube field effect transistors with suspended graphene gates

Svensson et al., 2011

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Document ID
7165456119287150182
Author
Svensson J
Lindahl N
Yun H
Seo M
Midtvedt D
Tarakanov Y
Lindvall N
Nerushev O
Kinaret J
Lee S
Campbell E
Publication year
Publication venue
Nano Letters

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Snippet

Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental …
Continue reading at www.research.ed.ac.uk (PDF) (other versions)

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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