Kemouche et al., 2017 - Google Patents

Geometry effect of suspended membrane on the sensitivity of pressure sensor field effect transistor (PSFET)

Kemouche et al., 2017

View PDF
Document ID
2095090103734203247
Author
Kemouche S
Kerrour F
Publication year
Publication venue
Proc of The International Conference on Recent Advances in Electrical Systems (ICRAES'17)

External Links

Snippet

In this paper, geometry effect of the poly silicon membrane used as suspended gate of the NMOS in a pressure sensor field effect transistor (PSFET) has been investigated. The main purpose of this study is to propose optimal geometry of the suspended membrane in order to …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress in general
    • G01L1/005Measuring force or stress in general by electrical means and not provided for in G01L1/06 - G01L1/22
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress in general
    • G01L1/14Measuring force or stress in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions

Similar Documents

Publication Publication Date Title
Zhou et al. A novel capacitive pressure sensor based on sandwich structures
Fragiacomo et al. Analysis of small deflection touch mode behavior in capacitive pressure sensors
CN105731359B (en) Sensor and its manufacturing method
JP2008064734A (en) Manufacturing method of electrostatic capacitance pressure sensor, and the electrostatic capacitance pressure sensor manufactured by the method
Kumar et al. Experimental evaluation of sensitivity and non-linearity in polysilicon piezoresistive pressure sensors with different diaphragm sizes
Guo et al. A monolithically integrated surface micromachined touch mode capacitive pressure sensor
Sundararajan et al. Elliptic diaphragm capacitive pressure sensor and signal conditioning circuit fabricated in SiGe CMOS integrated MEMS
Basov Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier
Gharib et al. On the feasibility of a new approach for developing a piezoresistive 3D stress sensing rosette
Li et al. The design and analysis of a novel structural piezoresistive pressure sensor for low pressure measurement
CA2806543A1 (en) A novel embedded 3d stress and temperature sensor utilizing silicon doping manipulation
Dai et al. Micro FET pressure sensor manufactured using CMOS-MEMS technique
Gao et al. A MEMS micro force sensor based on a laterally movable gate field-effect transistor (LMGFET) with a novel decoupling sandwich structure
Kemouche et al. Geometry effect of suspended membrane on the sensitivity of pressure sensor field effect transistor (PSFET)
Hynes et al. Development and characterisation of a surface micromachined FET pressure sensor on a CMOS process
Elgamel A simple and efficient technique for the simulation of capacitive pressure transducers
Kumar et al. Development of a current mirror-integrated pressure sensor using CMOS-MEMS cofabrication techniques
US9972723B2 (en) Piezoelectric thin-film based flexible sensing device, method for fabrication thereof and method for operating the same
Marsi et al. The capacitance and temperature effects of the SiC-and Si-based MEMS pressure sensor
Beddiaf et al. Thermal drift characteristics of capacitive pressure sensors
Salah et al. Performance optimization of pressure sensor based on suspended gate MOSFET
Roy et al. A simulation based geometrical analysis of MEMS capacitive pressure sensors for high absolute pressure measurement
Kumar et al. Fabrication and testing of PMOS current mirror-integrated MEMS pressure transducer
Roy et al. A study of silicon based MEMS capacitive sensor for absolute pressure measurement of a specific range
Jakati et al. Sensitivity enhancement in piezoresistive micro-pressure sensor using perforated diaphragm