Guo et al., 2000 - Google Patents
A monolithically integrated surface micromachined touch mode capacitive pressure sensorGuo et al., 2000
- Document ID
- 7134696867051817178
- Author
- Guo S
- Guo J
- Ko W
- Publication year
- Publication venue
- Sensors and Actuators A: Physical
External Links
Snippet
A monolithically integrated surface micromachined touch mode capacitive pressure sensor and its interface circuits are presented. The device includes the capacitance to voltage, and capacitance to frequency converters on the same chip. The sensor is fabricated using a …
- 238000000034 method 0 abstract description 27
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress in general
- G01L1/14—Measuring force or stress in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means by making use of variation in ohmic resistance, e.g. of potentiometers,, i.e. electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means by making use of variation in ohmic resistance, e.g. of potentiometers,, i.e. electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means by making use of variation in ohmic resistance, e.g. of potentiometers,, i.e. electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress in general
- G01L1/20—Measuring force or stress in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electro-kinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electro-kinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Guo et al. | A monolithically integrated surface micromachined touch mode capacitive pressure sensor | |
US6452427B1 (en) | Dual output capacitance interface circuit | |
Ko et al. | Touch mode capacitive pressure sensors | |
US11604104B2 (en) | Integrated piezoresistive and piezoelectric fusion force sensor | |
US5377524A (en) | Self-testing capacitive pressure transducer and method | |
He et al. | A silicon directly bonded capacitive absolute pressure sensor | |
Takao et al. | A CMOS integrated three-axis accelerometer fabricated with commercial submicrometer CMOS technology and bulk-micromachining | |
Liu et al. | Development of a CMOS-based capacitive tactile sensor with adjustable sensing range and sensitivity using polymer fill-in | |
CN105917205A (en) | An improved pressure sensor structure | |
Sundararajan et al. | Elliptic diaphragm capacitive pressure sensor and signal conditioning circuit fabricated in SiGe CMOS integrated MEMS | |
Hasegawa et al. | Amicromachined active tactile sensor for hardness detection | |
Kumar et al. | Experimental evaluation of sensitivity and non-linearity in polysilicon piezoresistive pressure sensors with different diaphragm sizes | |
US6683358B1 (en) | Silicon integrated accelerometer | |
Dimitropoulos et al. | A new SOI monolithic capacitive sensor for absolute and differential pressure measurements | |
Tsai et al. | A CMOS micromachined capacitive tactile sensor with integrated readout circuits and compensation of process variations | |
Kumar et al. | Development of a current mirror-integrated pressure sensor using CMOS-MEMS cofabrication techniques | |
Kabir et al. | High sensitivity acoustic transducers with thin p+ membranes and gold back-plate | |
Peng et al. | The temperature compensation of the silicon piezo-resistive pressure sensor using the half-bridge technique | |
Kumar et al. | Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor | |
Bertz et al. | A single-crystal Si-resonator with on-chip readout amplifier in standard CMOS | |
Rathore et al. | A novel CMOS-MEMS integrated pressure sensing structure based on current mirror sensing technique | |
Kumar et al. | Fabrication and testing of PMOS current mirror-integrated MEMS pressure transducer | |
Ferri et al. | A standard CMOS technology fully-analog differential capacitance sensor front-end | |
Roy et al. | A simulation based geometrical analysis of MEMS capacitive pressure sensors for high absolute pressure measurement | |
Kumar et al. | Sensitivity enhancement of current mirror readout circuit based piezoresistive pressure transducer using differential amplifier |