WO2019188116A1

WO2019188116A1 - Organic el display device and method for producing organic el display device

Info

Publication number: WO2019188116A1
Application number: PCT/JP2019/009309
Authority: WO
Inventors: 炭田　祉朗; 大原　宏樹
Original assignee: 株式会社ジャパンディスプレイ
Priority date: 2018-03-30
Filing date: 2019-03-08
Publication date: 2019-10-03
Also published as: JP2019179695A

Abstract

The present invention minimizes defects resulting from etching in a method for producing an organic EL display device. This method for producing an organic EL display device includes the following in this order: an inorganic insulating material film is formed so as to cover a substrate on which a display area provided with a plurality of pixels and a component mounting area on which components are mounted are positioned, said substrate being provided with a non-energized metal layer and wiring arranged from the display area to the component mounting area; a protective layer is formed on the inorganic insulating material film positioned on the display area; and the inorganic insulating material film in an area not covered by the protective layer is removed by dry etching and part of the wiring is exposed. When exposing the wiring, at least part of the metal layer is also exposed.

Description

Organic EL display device and method of manufacturing organic EL display device

The present invention relates to an organic EL display device and a method for manufacturing the organic EL display device.

Recently, an image display device using a self-luminous body called an organic light emitting diode (OLED: Organic Light Emitting Diode) (hereinafter referred to as an “organic EL (Electro-luminescent) display device”) has been put into practical use. For example, since the organic EL display device uses a self-luminous body as compared with a liquid crystal display device, it is not only excellent in terms of visibility and response speed, but also does not require a lighting device such as a backlight. Therefore, it is possible to reduce the thickness.

The organic EL display device includes a display panel in which a thin film transistor (TFT), an organic light emitting diode (OLED), and the like are formed on a base material. In such an organic EL display device, a method of sealing a display region including the light emitting element is employed in order to protect the light emitting element from moisture and the like. As a sealing method, for example, as disclosed in Patent Document 1 below, a method of combining an inorganic material film and a resin material layer is used.

Japanese Patent Laying-Open No. 2015-176717

The inorganic material film is usually formed by a chemical vapor deposition (CVD) method or the like. In the manufacturing process, an inorganic material film may be once formed over a wide area, and then the inorganic material film formed in a predetermined region may be removed by etching. However, the layer may disappear to the layer adjacent to the lower side of the inorganic material film by etching.

In view of the above, an object of the present invention is to provide an organic EL display device in which defects due to etching are suppressed.

According to one aspect of the present invention, a method for manufacturing a display device is provided. In the method for manufacturing a display device according to the present invention, a display region having a plurality of pixels and a component mounting region on which a component is mounted are positioned, and a metal layer that is not energized with wiring arranged from the display region to the component mounting region Forming an inorganic insulating material film so as to cover the substrate provided with, forming a protective layer on the inorganic insulating material film located in the display region, and inorganic in a region not covered with the protective layer In this order, the insulating material film is removed by dry etching to expose a part of the wiring, and at the time of exposing the wiring, at least a part of the metal layer is also exposed.

According to another aspect of the present invention, a display device is provided. A display device according to the present invention includes a base material having a display region having a plurality of pixels and a component mounting region on which a component is mounted, and a sealing member that covers the display region of the base material and is formed of an inorganic insulating material. A stop film, a wiring arranged from the display area of the base material to the component mounting area, a metal layer formed on the base material and not energized, and the wiring and the metal layer, A portion not covered with the sealing film is included.

It is a schematic diagram which shows the structure of the outline of the organic electroluminescence display which concerns on one Embodiment of this invention. FIG. 2 is a schematic plan view illustrating an example of a display panel of the organic EL display device illustrated in FIG. 1. FIG. 3 is a diagram showing an example of a III-III cross section of FIG. 2. It is a figure for demonstrating the manufacturing method of the organic electroluminescent display apparatus in one embodiment of this invention. It is a figure which shows an example of the II cross section of FIG. 4A. It is a figure which shows an example of the II-II cross section of FIG. 4A. It is a figure following FIG. It is a figure which shows an example of the II cross section of FIG. 5A. It is a figure which shows an example of the II-II cross section of FIG. 5A. It is a graph which shows the change (EPD waveform) of the plasma emission intensity when not providing a metal layer. It is a graph which shows the change (EPD waveform) of the plasma emission intensity at the time of providing a metal layer. FIG. 10 is a schematic plan view showing a modification of the display panel of the organic EL display device shown in FIG. 1. FIG. 8 is an enlarged plan view of an example of a region A surrounded by a broken line in FIG. 7. FIG. 8 is an enlarged plan view of another example of a region A surrounded by a broken line in FIG. 7.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the disclosure is merely an example, and those skilled in the art can easily conceive of appropriate changes while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, the drawings may be schematically evaluated with respect to the width, thickness, shape, and the like of each part as compared with actual embodiments for clarity of explanation, but are merely examples, and are interpreted as the interpretation of the present invention. It is not intended to limit. In addition, in the present specification and each drawing, elements similar to those described above with reference to the previous drawings may be denoted by the same reference numerals and detailed description thereof may be omitted as appropriate.

Further, in the detailed description of the present invention, when the positional relationship between a certain component and another component is defined, “up” and “down” are used only when the component is positioned directly above or directly below a certain component. Unless otherwise specified, the case where another component is further interposed is included.

FIG. 1 is a schematic diagram showing a schematic configuration of a display device according to an embodiment of the present invention, using an organic EL display device as an example. The organic EL display device 2 includes a pixel array unit 4 that displays an image and a drive unit that drives the pixel array unit 4. The organic EL display device 2 is a flexible display using a resin film as a base material, and a laminated structure such as a thin film transistor (TFT) or an organic light emitting diode (OLED) is formed on the base material made of the resin film. The The schematic diagram shown in FIG. 1 is an example, and the present embodiment is not limited to this.

In the pixel array unit 4, OLEDs 6 and pixel circuits 8 are arranged in a matrix corresponding to the pixels. The pixel circuit 8 includes a plurality of

TFTs

10 and 12 and a capacitor 14.

The drive unit includes a scanning line drive circuit 20, a video line drive circuit 22, a drive power supply circuit 24, and a control device 26, and drives the pixel circuit 8 to control light emission of the OLED 6.

The scanning line driving circuit 20 is connected to a scanning signal line 28 provided for each horizontal arrangement (pixel row) of pixels. The scanning line driving circuit 20 sequentially selects the scanning signal lines 28 according to the timing signal input from the control device 26, and applies a voltage for turning on the lighting TFT 10 to the selected scanning signal lines 28.

The video line driving circuit 22 is connected to a video signal line 30 provided for each vertical arrangement (pixel column) of pixels. The video line driving circuit 22 receives a video signal from the control device 26, and in accordance with the selection of the scanning signal line 28 by the scanning line driving circuit 20, a voltage corresponding to the video signal of the selected pixel row is applied to each video signal line. Output to 30. The voltage is written into the capacitor 14 via the lighting TFT 10 in the selected pixel row. The driving TFT 12 supplies a current corresponding to the written voltage to the OLED 6, whereby the OLED 6 of the pixel corresponding to the selected scanning signal line 28 emits light.

The drive power supply circuit 24 is connected to a drive power supply line 32 provided for each pixel column, and supplies current to the OLED 6 via the drive power supply line 32 and the drive TFT 12 of the selected pixel row.

Here, the lower electrode of the OLED 6 is connected to the driving TFT 12. On the other hand, the upper electrode of each OLED 6 is configured by an electrode common to the OLED 6 of all pixels. When the lower electrode is configured as an anode (anode), a high potential is input, and the upper electrode is a cathode (cathode) and a low potential is input. When the lower electrode is configured as a cathode (cathode), a low potential is input, and the upper electrode is an anode (anode) and a high potential is input.

FIG. 2 is a schematic plan view showing an example of the display panel of the organic EL display device shown in FIG. The pixel array unit 4 shown in FIG. 1 is provided in the display area 42 of the display panel 40, and the OLEDs 6 are arranged in the pixel array unit 4 as described above. As described above, the upper electrode constituting the OLED 6 is formed in common for each pixel and covers the entire display region 42.

A component mounting area 46 is provided on one side of the rectangular display panel 40, and wiring connected to the display area 42 is arranged. In the component mounting area 46, a driver IC 48 constituting a driving unit is mounted, or a flexible printed circuit board (FPC) 50 is connected. The FPC 50 is connected to the control device 26 and

other circuits

20, 22, 24, etc., and an IC is mounted thereon.

FIG. 3 is a view showing an example of a section taken along the line III-III in FIG. In FIG. 3, hatching of some layers is omitted in order to make the cross-sectional structure easy to see.

The display panel 40 has a structure in which, for example, a circuit layer 74 in which TFTs 72 and the like are formed, an OLED 6 and a sealing layer 106 for sealing the OLED 6 are stacked on a flexible base material 70. The flexible base material 70 is made of, for example, a resin film containing a resin such as a polyimide resin. The thickness of the base material 70 is, for example, 10 μm to 20 μm. In the present embodiment, the pixel array unit 4 is a top emission type, and light generated by the OLED 6 is emitted to the side opposite to the base material 70 side (upward in FIG. 3). When the colorization method in the organic EL display device 2 is a color filter method, for example, on the display panel 40 on the side opposite to the base material 70 side (upper side) of the sealing layer 106 or on the counter substrate side A color filter is arranged in For example, red (R), green (G), and blue (B) light is produced by passing white light generated by the OLED 6 through the color filter.

In the circuit layer 74 of the display area 42, the pixel circuit 8, the scanning signal line 28, the video signal line 30, the drive power supply line 32, and the like are formed. At least a part of the drive unit can be formed as a circuit layer 74 on the substrate 70 in a region adjacent to the display region 42. The terminals of the driver IC 48 and the FPC 50 constituting the driving unit are electrically connected to the wiring 116 of the circuit layer 74 in the component mounting region 46.

As shown in FIG. 3, a base layer 80 made of an inorganic insulating material is disposed on the base material 70. As the inorganic insulating material, for example, silicon nitride (SiN _y ), silicon oxide (SiO _x ), and a composite thereof are used.

In the display region 42, a semiconductor region 82 serving as a channel portion and a source / drain portion of the top gate TFT 72 is formed on the base material 70 through the base layer 80. The semiconductor region 82 is made of, for example, polysilicon (p-Si). The semiconductor region 82 is formed by, for example, providing a semiconductor layer (p-Si film) on the base material 70, patterning the semiconductor layer, and selectively leaving a portion used in the circuit layer 74.

A gate electrode 86 is disposed on the channel portion of the TFT 72 via a gate insulating film 84. The gate insulating film 84 is typically formed of TEOS. The gate electrode 86 is formed by patterning a metal film formed by sputtering or the like, for example. An interlayer insulating layer 88 is disposed on the gate electrode 86 so as to cover the gate electrode 86. The interlayer insulating layer 88 is formed of, for example, the above inorganic insulating material. Impurities are introduced into the semiconductor region 82 (p-Si) serving as the source / drain portion of the TFT 72 by ion implantation, and further, a source electrode 90a and a drain electrode 90b electrically connected thereto are formed. Is done.

On the TFT 72, an interlayer insulating film 92 is disposed. A wiring 94 is disposed on the surface of the interlayer insulating film 92. For example, the wiring 94 is formed by patterning a metal film formed by sputtering or the like. The metal film forming the wiring 94 and the metal film used for forming the gate electrode 86, the source electrode 90a, and the drain electrode 90b include, for example, the wiring 116 and the scanning signal line 28, the video signal line 30, and the like shown in FIG. The drive power supply line 32 can be formed with a multilayer wiring structure. A planarizing film 96 and a passivation film 98 are formed thereon, and the OLED 6 is formed on the passivation film 98 in the display region 42. The planarizing film 96 is made of, for example, an organic insulating material such as a resin material. The passivation film 98 is formed of an inorganic insulating material such as SiN _y , for example.

The OLED 6 includes a lower electrode 100, an organic material layer 102, and an upper electrode 104. Specifically, the organic material layer 102 includes a hole transport layer, a light emitting layer, an electron transport layer, and the like. The OLED 6 is typically formed by laminating the lower electrode 100, the organic material layer 102, and the upper electrode 104 in this order from the base material 70 side. In the present embodiment, the lower electrode 100 is the anode (anode) of the OLED 6 and the upper electrode 104 is the cathode (cathode).

3 is a driving TFT 12 having an n channel, the lower electrode 100 is connected to the source electrode 90a of the TFT 72. Specifically, after the above-described planarization film 96 is formed, a contact hole 110 for connecting the lower electrode 100 to the TFT 72 is formed. For example, the surface of the planarization film 96 and the conductor portion formed in the contact hole 110. By patterning, the lower electrode 100 connected to the TFT 72 is formed for each pixel. The lower electrode 100 is made of a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or a metal such as Ag or Al.

On the above structure, ribs 112 for separating pixels are arranged. For example, after the formation of the lower electrode 100, ribs 112 are formed at the pixel boundaries, and the organic material layer 102 and the upper electrode 104 are laminated in an effective area of the pixel surrounded by the ribs 112 (an area where the lower electrode 100 is exposed). The The rib 112 is formed of an organic insulating material such as a resin material. The upper electrode 104 is made of, for example, a transparent conductive material such as ITO or IZO, or an extremely thin alloy of Mg and Ag.

A sealing layer 106 is disposed on the upper electrode 104 so as to cover the entire display region 42. The sealing layer 106 has a laminated structure including the first sealing film 161, the sealing planarization film 160, and the second sealing film 162 in this order. The first sealing film 161 and the second sealing film 162 are formed of an inorganic material (for example, the inorganic insulating material). Specifically, it is formed by forming a SiN _y film by chemical vapor deposition (CVD). The sealing planarization film 160 is formed of an organic material (for example, a resin material such as an acrylic resin). Specifically, it is formed by applying a resin composition by an inkjet method. The sealing planarization film 160 is not formed on the periphery of the sealing layer 106, and the first sealing film 161 and the second sealing film 162 are in contact with each other in the frame region 44 surrounding the display region 42. The upper surface and the end of the sealing planarization film 160 are covered with the second sealing film. On the other hand, since the component is connected to the component mounting region 46, the sealing layer 106 is not disposed.

A protective layer 108 is disposed on the sealing layer 106 so as to cover the entire display region 42. The protective layer 108 is formed of, for example, an organic material (for example, a resin material such as an acrylic resin). Specifically, it is formed by pattern formation using a photosensitive resin composition and application of a resin composition by an ink jet method. In the frame region 44 surrounding the display region 42, the end portions of the sealing layer 106 (end portions of the first sealing film 161 and the second sealing film 162) are cut at the position of the outer edge of the protective layer 108. Specifically, the end portion of the protective layer 108 and the end portions of the first sealing film 161 and the second sealing film 162 are aligned in plan view. The protective layer 108 is, for example, a predetermined region (a predetermined region on the wiring 116) of the inorganic insulating material film (the first sealing film 161 and the second sealing film 162) formed in the manufacturing process of the display panel 40. ) Is used as a mask when removed by etching. In this embodiment, the protective layer 108 remains on the product (display panel 40) without being removed, but the protective layer 108 may be removed after etching.

Although not shown, for example, a surface film is disposed on the protective layer 108 via an adhesive layer in order to ensure the mechanical strength of the surface of the display panel 40. On the other hand, since components are connected to the component mounting region 46, a surface film is not usually disposed. In addition, you may use a surface film as a mask in the case of the said etching.

As shown in FIG. 3, the display panel 40 can be manufactured by keeping the base material 70 in a flat shape. For example, when the display panel 40 is stored in the housing of the organic EL display device 2, the display panel 40 is outside the display region 42. A bending area 120 is provided, and the component mounting area 46 is arranged behind the display area 42. Specifically, the display panel 40 is curved between the component mounting area 46 and the display area 42 so that the component is folded back to the back side of the display area 42.

In the bending region 120, it is preferable to omit or reduce at least a part of a layer formed of an inorganic insulating material (for example, the base layer 80, the interlayer insulating layer 88, the interlayer insulating film 92, and the passivation film 98). This is because a layer formed of an inorganic insulating material tends to be damaged by bending. In the illustrated example, the wiring 116 is arranged on the base layer 80 in the bending region 120, and the wiring 116 is covered with the resin layer 76.

4 and 5 are diagrams for explaining a method of manufacturing an organic EL display device according to one embodiment of the present invention, and FIG. 5 is a diagram subsequent to FIG.

4A is a plan view showing a part of the state (display panel intermediate body) before being cut and before etching the sealing layer 106 (sealing films 161 and 162), and FIG. 4B is a plan view of FIG. 4A. FIG. 4C is a diagram illustrating an example of a cross section taken along line -I, and FIG. 4C is a diagram illustrating an example of a cross section taken along line II-II in FIG. 4A. Specifically, the display panel intermediate 40a is cut (cut) along the broken line L shown in FIG. 4, and the components are mounted, whereby the display panel 40 shown in FIG. 2 is obtained. Specifically, it is divided into individual display panels 40 (individual pieces) by cutting (cutting).

The entire surface of the display panel intermediate 40 a is covered with the sealing

films

161 and 162, and the protective layer 108 is disposed on the sealing

films

161 and 162. The protective layer 108 is disposed so as to cover the display region 42 and its peripheral region, and is used for removing a portion (peripheral portion 122) of the sealing

films

161 and 162 that does not overlap with the protective layer 108. An extraction electrode region 124 is formed in the component mounting region 46. As shown in FIG. 4B, in the extraction electrode region 124, the wiring 116 disposed on the base layer 80 is directly covered with the sealing film 161 and is in contact with the sealing film 161. In the illustrated example, the periphery of the wiring 116 is covered from the upper surface to the side surface by the resin layer 76 to prevent the edges from being exposed from the sealing

films

161 and 162.

The wiring (extraction electrode) 116 may be a single layer body or a multilayer body including a plurality of layers, but in the example illustrated in FIG. 4B, the wiring (extraction electrode) 116 has a multilayer structure including a plurality of layers. Yes. Specifically, it includes an electrode layer 116b and surface

protective layers

116a and 116c disposed on both sides (thickness direction) of the electrode layer 116b. The surface

protective layers

116a and 116c serve to prevent corrosion of the electrode layer 116b, for example. The thickness of the electrode layer 116b is, for example, 200 nm to 800 nm. The thicknesses of the surface

protective layers

116a and 116c are, for example, 10 nm to 100 nm. The electrode layer 116b is formed of a metal such as Al, for example. The surface

protective layers

116a and 116c are formed of a metal such as Ti or Mo, for example. Specific examples of the wiring 116 include a Ti / Al / Ti laminate and a Mo / Al / Mo laminate.

The display panel intermediate 40a is provided with a metal layer 118 (a dummy wiring that is not energized) in a region surrounded by the cut line L (for example, a region that is not left in the product). The metal layer 118 is disposed so as to surround the extraction electrode region 124. By disposing so as to surround, the disappearance of the wiring 116 described later can be effectively suppressed. From the same viewpoint, the metal layer 118 is preferably disposed in the vicinity of the extraction electrode region 124. The metal layer 118 is disposed on the base layer 80, and the surface thereof is directly covered with the sealing film 161 and is in contact with the sealing film 161. In the illustrated example, the peripheral edge of the metal layer 118 is covered from the upper surface to the side surface by the resin layer 76, thereby preventing the edges from being exposed from the sealing

films

161 and 162.

The metal layer 118 can include any suitable metal. In addition, the metal layer 118 may be a single layer or a stacked body including a plurality of layers. In the example shown in FIG. 4C, the metal layer 118 is a single-layer body containing a metal (for example, the same structure as the surface protective layer 116c of the wiring (extraction electrode) 116). In another embodiment, the metal layer 118 has the same configuration as that of the wiring (extraction electrode) 116 shown in FIG. 4B from the viewpoint of manufacturing efficiency (since the metal-containing layer is often patterned at once). .

FIG. 5A is a plan view showing a state after the peripheral portion 122 of the sealing

films

161 and 162 is removed, FIG. 5B is a diagram showing an example of the II cross section of FIG. 5A, and FIG. It is a figure which shows an example of the II-II cross section. The peripheral portion 122 is removed by etching (for example, dry etching) using the protective layer 108 as a mask, and the two sealing

films

161 and 162 are positioned at the outer edge of the protective layer 108 as shown in FIG. It is cut at.

The surface of the wiring 116 is exposed and the surface of the metal layer 118 is exposed in the extraction electrode region 124 by removing the peripheral portion 122 of the sealing films 161 and 162 (leading out terminals). By providing the metal layer 118 covered with the peripheral portion 122 of the sealing

films

161 and 162, the peripheral portion 122 of the sealing

films

161 and 162 is formed without losing the adjacent wiring 116 as shown in FIG. 5B. It can be removed well. Specifically, when the removal of the peripheral portion 122 that is an inorganic insulating material film proceeds by etching, the lower wiring 116 also begins to be etched, but the presence of the metal layer 118 increases the area of the layer containing metal, It is possible to delay the disappearance of the wiring 116 formed of metal (lower the etching rate). As a result, the disappearance of the wiring 116 can be suppressed while the peripheral portion 122 is sufficiently removed. As illustrated, in the case where the wiring 116 includes the surface protective layer 116c that protects the surface of the electrode layer 116b, it is possible to prevent the thin surface protective layer 116c from completely disappearing. Depending on the etching conditions, for example, the area of the metal layer 118 / the surface area of the peripheral portion 122 (before etching) is preferably set to 1/50 or more. It should be noted that the etching rate can be lowered by increasing the existence region of the etching target object and decreasing the number of reactive species per unit area (ion, gas, radical, etc.) and delaying the removal of the product by etching. Conceivable.

In one embodiment, the metal included in the wiring 116 (the outermost surface layer 116c of the wiring 116) is included in the metal layer 118 (eg, the outermost surface layer of the metal layer 118). As a specific example, the configuration is the same as that of the surface protective layer 116c of the wiring (lead electrode) 116, and a dummy surface protective layer is formed. According to such a configuration, the progress of etching of the wiring 116 can be monitored. For example, it can be monitored by measuring the intensity change of the plasma emission spectrum of the gas during etching. FIG. 6A shows a change in plasma emission intensity (EPD waveform) when etching is performed without providing the metal layer 118. Only plasma emission due to the peripheral portion 122 (SiN _y film) is detected, and the wiring 116 (TiN The plasma emission due to the surface protective layer containing) cannot be detected. It is considered that this is because the area of the wiring 116 (extraction electrode) is too small with respect to the peripheral portion 122. On the other hand, as shown in FIG. 4A and FIG. 4C, the change in plasma emission intensity (EPD waveform) when the metal layer (Ti-containing layer) 118 is provided and etched is shown in FIG. Plasma emission considered to be caused by is detected. For example, if the etching is terminated at the timing T in FIG. 6B, the disappearance of the wiring 116 can be sufficiently suppressed while the peripheral portion 122 is sufficiently removed. The removal (etching) of the peripheral portion 122 is desirably performed excessively in consideration of variations in the panel surface.

7 is a schematic plan view showing a modification of the display panel of the organic EL display device shown in FIG. 1, and FIG. 8A is an enlarged plan view of an example of a region A surrounded by a broken line in FIG. FIG. 8B is an enlarged plan view of another example of a region A surrounded by a broken line in FIG. This modification is different from the above embodiment in that the metal layer 118 (the dummy wiring that is not energized) is not removed by cutting and remains in the product (display panel 40). In the present modification, the metal layer 118 has a bent shape in the bending region 120 in order to correspond to bending (deformation stress) when the display panel 40 is bent. As the bent shape, for example, a waveform shape as shown in FIG. 8A or a lattice / mesh type as shown in FIG. 8B is adopted. Note that in the bending region 120, the wiring 116 may also have a bent shape.

The present invention is not limited to the above embodiment, and various modifications are possible. For example, it can be replaced with a configuration that is substantially the same as the configuration shown in the above embodiment, a configuration that exhibits the same operational effects, or a configuration that can achieve the same purpose.

In the scope of the idea of the present invention, those skilled in the art can conceive various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. For example, those in which the person skilled in the art has appropriately added, deleted, or changed the design of the above-described embodiments, or those in which processes have been added, omitted, or changed conditions are also included in the gist of the present invention. As long as it is provided, it is included in the scope of the present invention.

Claims

A display region having a plurality of pixels and a component mounting region on which a component is mounted are positioned so as to cover a substrate provided with wiring arranged from the display region to the component mounting region and a non-energized metal layer Forming an inorganic insulating material film;
Forming a protective layer on the inorganic insulating material film located in the display region;
Removing the inorganic insulating material film in the region not covered with the protective layer by dry etching to expose a part of the wiring in this order,
When exposing the wiring, exposing at least a portion of the metal layer;
A method for manufacturing an organic EL display device.
The method according to claim 1, further comprising, after removing the inorganic insulating material film by the etching, removing a region of the base material where the metal layer is provided by cutting.
The manufacturing method according to claim 1, wherein the metal layer includes a metal contained in the wiring.
The wiring has an electrode layer and a surface protective layer protecting the electrode layer,
The said metal layer is a manufacturing method of Claim 3 containing the metal contained in the said surface protective layer.
The manufacturing method according to claim 4, wherein the thickness of the surface protective layer is 10 nm to 100 nm.
The manufacturing method according to claim 3, wherein the progress of etching of the wiring is monitored.
The manufacturing method according to claim 1, wherein the metal layer is provided so as to surround a region where the wiring is exposed.
A base material having a display area including a plurality of pixels and a component mounting area on which a component is mounted;
A sealing film that covers the display area of the substrate and is formed of an inorganic insulating material;
Wiring arranged from the display area of the base material to the component mounting area;
A metal layer formed on the substrate and not energized,
The wiring and the metal layer each have a portion that is not covered with the sealing film.
Organic EL display device.
The base material has flexibility, and includes a bending region between the display region and the display region,
The organic EL display device according to claim 8, wherein the metal layer located in the bending region has a bent shape.
The organic EL display device according to claim 8, wherein the metal layer includes a metal contained in the wiring.
The wiring has an electrode layer and a surface protective layer protecting the electrode layer,
The organic EL display device according to claim 10, wherein the metal layer includes a metal contained in the surface protective layer.
The organic EL display device according to claim 11, wherein the thickness of the surface protective layer is 10 nm to 100 nm.