WO2008114311A1 - 低雑音増幅器 - Google Patents

低雑音増幅器 Download PDF

Info

Publication number
WO2008114311A1
WO2008114311A1 PCT/JP2007/000242 JP2007000242W WO2008114311A1 WO 2008114311 A1 WO2008114311 A1 WO 2008114311A1 JP 2007000242 W JP2007000242 W JP 2007000242W WO 2008114311 A1 WO2008114311 A1 WO 2008114311A1
Authority
WO
WIPO (PCT)
Prior art keywords
source
grounded transistor
gate
drain
feeding
Prior art date
Application number
PCT/JP2007/000242
Other languages
English (en)
French (fr)
Inventor
Takuji Yamamoto
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to JP2009504904A priority Critical patent/JPWO2008114311A1/ja
Priority to PCT/JP2007/000242 priority patent/WO2008114311A1/ja
Publication of WO2008114311A1 publication Critical patent/WO2008114311A1/ja

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26Modifications of amplifiers to reduce influence of noise generated by amplifying elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

 低雑音増幅器は,ゲートに高周波入力信号が入力されるソース接地トランジスタ(M1)と,ソース接地トランジスタのドレインの高周波信号がソースに入力されるゲート接地トランジスタ(M2)と,ゲート接地トランジスタのドレインと電源電圧との間に設けられた負荷共振回路(LoCo)と,ソース接地トランジスタのドレインとゲート接地トランジスタのソースとの間に設けられ,直流成分には実効的にオープンで高周波成分には実効的にショートになる結合エレメント(C1)と,ソース接地トランジスタのドレインと電源電圧との間に設けられソース接地トランジスタのドレインにバイアス電圧を供給するバイアス供給用インダクタ(Lm1)と,ゲート接地トランジスタのソースに接続されゲート接地トランジスタにバイアス電流を供給するバイアス供給用電流源(Im2)とを有する。
PCT/JP2007/000242 2007-03-16 2007-03-16 低雑音増幅器 WO2008114311A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009504904A JPWO2008114311A1 (ja) 2007-03-16 2007-03-16 低雑音増幅器
PCT/JP2007/000242 WO2008114311A1 (ja) 2007-03-16 2007-03-16 低雑音増幅器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/000242 WO2008114311A1 (ja) 2007-03-16 2007-03-16 低雑音増幅器

Publications (1)

Publication Number Publication Date
WO2008114311A1 true WO2008114311A1 (ja) 2008-09-25

Family

ID=39765432

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/000242 WO2008114311A1 (ja) 2007-03-16 2007-03-16 低雑音増幅器

Country Status (2)

Country Link
JP (1) JPWO2008114311A1 (ja)
WO (1) WO2008114311A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610506B2 (en) 2011-02-24 2013-12-17 Fujitsu Limited Amplifier circuit
WO2018037688A1 (ja) * 2016-08-23 2018-03-01 ソニーセミコンダクタソリューションズ株式会社 信号増幅装置
JP2018082458A (ja) * 2013-03-15 2018-05-24 ドックオン エージー 万能の復調能力を備えた対数増幅器
CN112290893A (zh) * 2020-11-07 2021-01-29 山西大学 低噪声宽带高压放大器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121504A (ja) * 1984-11-16 1986-06-09 Matsushita Electric Ind Co Ltd 周波数変換器
JPS6351709A (ja) * 1986-08-21 1988-03-04 Matsushita Electric Ind Co Ltd 電子回路基板
US5966051A (en) * 1998-04-21 1999-10-12 Conexant Systems, Inc. Low voltage medium power class C power amplifier with precise gain control

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102765A (ja) * 1991-10-09 1993-04-23 Matsushita Electric Ind Co Ltd 利得制御回路
JPH05259748A (ja) * 1992-03-13 1993-10-08 Hitachi Ltd ビデオ出力回路
JP2005072735A (ja) * 2003-08-20 2005-03-17 Sharp Corp 受信装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121504A (ja) * 1984-11-16 1986-06-09 Matsushita Electric Ind Co Ltd 周波数変換器
JPS6351709A (ja) * 1986-08-21 1988-03-04 Matsushita Electric Ind Co Ltd 電子回路基板
US5966051A (en) * 1998-04-21 1999-10-12 Conexant Systems, Inc. Low voltage medium power class C power amplifier with precise gain control

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610506B2 (en) 2011-02-24 2013-12-17 Fujitsu Limited Amplifier circuit
JP2018082458A (ja) * 2013-03-15 2018-05-24 ドックオン エージー 万能の復調能力を備えた対数増幅器
WO2018037688A1 (ja) * 2016-08-23 2018-03-01 ソニーセミコンダクタソリューションズ株式会社 信号増幅装置
JPWO2018037688A1 (ja) * 2016-08-23 2019-06-20 ソニーセミコンダクタソリューションズ株式会社 信号増幅装置
US20190199308A1 (en) * 2016-08-23 2019-06-27 Sony Semiconductor Solutions Corporation Signal amplifier device
US11018643B2 (en) 2016-08-23 2021-05-25 Sony Semiconductor Solutions Corporation Signal amplifier device
JP7033067B2 (ja) 2016-08-23 2022-03-09 ソニーセミコンダクタソリューションズ株式会社 信号増幅装置
CN112290893A (zh) * 2020-11-07 2021-01-29 山西大学 低噪声宽带高压放大器
CN112290893B (zh) * 2020-11-07 2024-05-28 山西大学 低噪声宽带高压放大器

Also Published As

Publication number Publication date
JPWO2008114311A1 (ja) 2010-06-24

Similar Documents

Publication Publication Date Title
US7560994B1 (en) Systems and methods for cascode switching power amplifiers
WO2016155614A1 (zh) 一种效率提高的共源共栅射频功率放大器
WO2010120825A3 (en) Field-plated transistor including feedback resistor
JP2007243946A5 (ja)
MX2013006660A (es) Amplificador de ruido bajo.
US8629727B2 (en) Techniques on input transformer to push the OP1dB higher in power amplifier design
US8305143B2 (en) Amplifier circuit and transceiver
WO2008076822A3 (en) Adaptive bias technique for field effect transistor
WO2009065068A3 (en) Switching amplifiers
US20130187713A1 (en) Power amplifier circuit and control method
WO2014110289A3 (en) Programmably configured switchmode audio amplifier
KR20140079713A (ko) 전력 증폭기
TW200731657A (en) Single-ended input to differential-ended output low noise amplifier implemented with cascode and cascade topology
WO2008100889A3 (en) Gallium nitride traveling wave structures
WO2011008562A3 (en) Integrated power amplifier with load inductor located under ic die
WO2008114311A1 (ja) 低雑音増幅器
WO2010136862A8 (en) Low noise amplifier and mixer
US8766722B2 (en) Quiescent control circuit for providing control current for an amplifier
CN106130489B (zh) 一种低噪声放大器
WO2009057385A1 (ja) 電力増幅器、電力増幅器の制御方法
WO2011047352A3 (en) Amplifier bias techniques
WO2009019761A1 (ja) バッファ装置
WO2011012473A4 (en) Dual use transistor
WO2007019147A3 (en) Resonant types of common-source/common-emitter structure for high gain amplification
WO2009087482A3 (en) Low noise amplifier

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07736899

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009504904

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07736899

Country of ref document: EP

Kind code of ref document: A1