WO2005029559A1 - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
- Publication number
- WO2005029559A1 WO2005029559A1 PCT/JP2004/014000 JP2004014000W WO2005029559A1 WO 2005029559 A1 WO2005029559 A1 WO 2005029559A1 JP 2004014000 W JP2004014000 W JP 2004014000W WO 2005029559 A1 WO2005029559 A1 WO 2005029559A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- liquid
- substrate
- recovery
- port
- supply
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 26
- 239000007788 liquid Substances 0.000 claims abstract description 412
- 238000011084 recovery Methods 0.000 claims abstract description 338
- 239000000758 substrate Substances 0.000 claims abstract description 259
- 230000003287 optical effect Effects 0.000 claims abstract description 133
- 230000007246 mechanism Effects 0.000 claims abstract description 78
- 238000007654 immersion Methods 0.000 claims description 48
- 239000011148 porous material Substances 0.000 claims description 22
- 238000005259 measurement Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 2
- 238000007689 inspection Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005286 illumination Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000005871 repellent Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000010436 fluorite Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 1
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000643890 Homo sapiens Ubiquitin carboxyl-terminal hydrolase 5 Proteins 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 102100021017 Ubiquitin carboxyl-terminal hydrolase 5 Human genes 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010627 cedar oil Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Definitions
- the present invention relates to an exposure apparatus that irradiates a substrate with exposure light through a projection optical system and a liquid to expose the substrate, and a method for manufacturing a depiice.
- a semiconductor device and a liquid crystal display device are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.
- An exposure apparatus used in the photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate.
- the projection optical system projects a pattern of the mask while sequentially moving the mask stage and the substrate stage. Is transferred to the substrate via
- further improvement in the resolution of the projection optical system has been desired in order to cope with higher integration of device patterns.
- the resolution of the projection optical system increases as the length of the exposure wave used decreases and as the numerical aperture of the projection optical system increases. For this reason, the exposure wavelength used in the exposure apparatus is becoming shorter year by year, and the numerical aperture of the projection optical system is also increasing.
- the exposure wavelength of the mainstream is 248 nm of KrF excimer laser, but 193 nm of shorter wavelength ArF excimer laser is also being put to practical use.
- the depth of focus (DOF) is as important as the resolution.
- the resolution R and the depth of focus ⁇ are respectively represented by the following equations.
- Equation (1) is the exposure wavelength
- NA is the numerical aperture of the projection optical system
- k 2 represent the process coefficients. From Equations (1) and (2), it can be seen that when the exposure wavelength; I is shortened and the numerical aperture NA is increased to increase the resolution R, the depth of focus ⁇ becomes narrower. If the depth of focus ⁇ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and the focus margin during the exposure operation may be insufficient. Therefore, as a method of substantially shortening the exposure wavelength and increasing the depth of focus, for example, International Publication No. WO99 / 49504 discloses a immersion method.
- the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent to form an immersion area, and the wavelength of the exposure light in the liquid is changed to lZn in air.
- n is the refractive index of the liquid, which is usually about 1.2 to 1.6), to improve the resolution and increase the depth of focus by about n times.
- the liquid that could not be collected will flow out, causing damage to the surrounding mechanical parts, and causing fluctuations in the environment (humidity, etc.) where the substrate is placed, and the stage It may affect various measurement operations related to exposure processing, such as causing a change in the refractive index on the optical path of the detection light of the optical interferometer used for position measurement, which reduces exposure accuracy.
- the vibration causes deterioration of the pattern image projected on the substrate and measurement error of the interferometer that monitors the position of the substrate stage that holds the substrate. there is a possibility.
- the present invention has been made in view of such circumstances, and an exposure apparatus capable of maintaining exposure accuracy when performing exposure by irradiating a substrate with exposure light via a projection optical system and a liquid. And a device manufacturing method. Disclosure of the invention
- the present invention is an exposure apparatus that exposes a substrate by projecting an image of the pattern onto the substrate via a projection optical system and a liquid, wherein the supply port is provided near a projection area where the image of the pattern is projected.
- a liquid supply mechanism for supplying liquid onto the substrate from above the substrate through the supply port, a first recovery port provided at a position farther from the projection area than the supply port, and 1 Farther from the projection area than the collection port And a liquid recovery mechanism for recovering the liquid on the substrate from above the substrate through the first recovery port and the second recovery port.
- the liquid on the substrate can be removed. Even if a situation occurs in which the liquid cannot be collected at the first recovery port, the liquid that could not be recovered at the first recovery port can be recovered at the second recovery port. Therefore, it is possible to prevent inconveniences such as a decrease in exposure accuracy caused by the escaping liquid.
- the present invention relates to an exposure apparatus for exposing a substrate by projecting an image of a pattern onto the substrate via a projection optical system and a liquid, the exposure apparatus having a collection port above the substrate, A liquid collecting mechanism for collecting the liquid on the substrate from above through the collecting port, and an exposure apparatus in which a porous material is disposed inside the collecting port.
- the porous material inside the recovery port of the liquid recovery mechanism, it is possible to prevent the inconvenience of generating a loud noise or vibration when recovering the liquid on the substrate. Therefore, it is possible to prevent the exposure accuracy from being deteriorated due to the vibration or the like.
- the present invention is an exposure apparatus that exposes the substrate by projecting an image of a pattern onto the substrate via a projection optical system and a liquid, the exposure apparatus having a collection port above the substrate, A liquid recovery mechanism for recovering the liquid on the substrate through the recovery port, and an exposure apparatus in which a capillary member is disposed inside the port.
- the capillary member inside the recovery port of the liquid recovery mechanism, it is possible to prevent the inconvenience of generating a loud noise or vibration when recovering the liquid on the substrate. Therefore, it is possible to prevent a problem that the exposure accuracy is reduced due to the vibration or the like.
- the present invention relates to an exposure apparatus for exposing a substrate by projecting an image of the pattern onto the substrate via a projection optical system and a liquid, wherein the exposure apparatus is arranged near a projection area where the image of the pattern is projected.
- a supply port, and the base is provided through the supply port from above the substrate.
- An exposure apparatus comprising: a liquid recovery mechanism; and a control system that controls at least one of a liquid supply amount from the supply port and a liquid recovery amount from the recovery port so that only the liquid is recovered from the recovery port.
- Provide equipment is provided.
- the present invention by controlling at least one of the liquid supply amount onto the substrate and the liquid recovery amount from the substrate, only the liquid can be recovered from the recovery port, and the sound and vibration force can be reduced. S can be prevented from occurring. Therefore, it is possible to prevent a decrease in exposure accuracy due to vibration or the like.
- an exposure method comprising: forming a liquid immersion area on a part of a substrate; irradiating the substrate with exposure light through a liquid forming the liquid immersion area and a projection optical system, thereby exposing the substrate.
- An exposure apparatus comprising: a detector configured to detect an end of the liquid immersion area.
- region and outflow of a liquid can be prevented by detecting the edge part of an immersion area
- the present invention provides a device manufacturing method using the above exposure apparatus.
- ADVANTAGE OF THE INVENTION According to this invention, exposure processing can be performed in the state which maintained high exposure precision, and the Depises which exhibit desired performance can be provided.
- FIG. 1 is a schematic configuration diagram showing a first embodiment of the exposure apparatus of the present invention.
- FIG. 2 is a plan view for explaining the arrangement of a liquid supply port and a recovery port.
- FIG. 3 is a perspective view showing a flow path forming member constituting the liquid supply mechanism and the liquid recovery mechanism.
- FIG. 4 is a perspective view showing a first member constituting the flow path forming member.
- FIG. 5A is a perspective view of a second member forming the flow path forming member as viewed from above
- FIG. 5B is a perspective view of a second member forming the flow path forming member as viewed from below.
- FIG. 6A is a perspective view of the third member constituting the flow path forming member as viewed from above
- FIG. FIG. 8 is a perspective view of a third member constituting the road forming member as viewed from below.
- FIG. 7 is a sectional view taken along the line AA of FIG.
- FIG. 8 is a sectional view taken along the line BB in FIG.
- FIG. 9 is a schematic diagram showing a liquid supply and recovery operation during exposure of a substrate.
- FIG. 10 is an enlarged sectional view of a main part according to a second embodiment of the exposure apparatus of the present invention.
- FIG. 11 is a schematic plan view according to a second embodiment of the exposure apparatus of the present invention.
- FIG. 12 is an enlarged sectional view of a main part according to a third embodiment of the exposure apparatus of the present invention.
- FIG. 13 is a schematic plan view according to a third embodiment of the exposure apparatus of the present invention.
- FIG. 14 is an enlarged sectional view of a main part according to a fourth embodiment of the exposure apparatus of the present invention.
- FIG. 15 is an enlarged sectional view of an essential part of an exposure apparatus according to a fifth embodiment of the present invention.
- FIG. 16 is a flowchart illustrating an example of a semiconductor device manufacturing process. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a schematic configuration diagram showing an exposure apparatus according to the present embodiment.
- an exposing device EX includes a mask stage MST that supports a mask M, a substrate stage PST that supports a substrate P, and an illumination optical system that illuminates the mask M supported by the mask stage MST with exposure light EL.
- a projection optical system PL that projects and exposes the pattern image of the mask M illuminated by the IL and the exposure light EL onto the substrate P supported by the substrate stage PST, and a control device CONT that controls the overall operation of the exposure apparatus EX
- the exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which the immersion method is applied to substantially shorten the exposure wavelength to improve the resolution and to substantially widen the depth of focus.
- a liquid supply mechanism 10 for supplying the liquid 1 to the substrate P; and a liquid recovery mechanism 20 for recovering the liquid 1 supplied onto the substrate P.
- the exposure apparatus EX uses at least the substrate 1 including the projection area AR 1 of the projection optical system PL by the liquid 1 supplied from the liquid supply mechanism 10 while transferring the / turn image of the mask M onto the substrate P at least.
- the exposure apparatus EX is, specifically, a local immersion liquid that fills the liquid 1 between the optical element 2 at the image plane side end of the projection optical system PL and the surface of the substrate P arranged on the image plane side.
- Exposure light EL that has passed through mask M Is projected onto the substrate P through the liquid 1 filled in the optical path space between the projection optical system PL and the substrate P and the substrate P via the projection optical system PL to project and expose the pattern of the mask M onto the substrate P.
- the exposure apparatus EX scanning is performed by exposing the pattern formed on the mask M to the substrate P while synchronously moving the mask M and the substrate P in different directions (opposite directions) in the running direction.
- a mold exposure apparatus a so-called scanning stepper
- the direction that coincides with the optical axis AX of the projection optical system PL is the Z-axis direction
- the synchronous movement direction (scanning direction) between the mask M and the substrate P in a plane perpendicular to the Z-axis direction is the X-axis.
- the “substrate” includes a semiconductor wafer coated with a photoresist as a photosensitive material
- the “mask” includes a reticle on which a device pattern to be reduced and projected onto the substrate is formed.
- the illumination optical system IL illuminates the mask ⁇ ⁇ ⁇ supported by the mask stage MS ⁇ with the exposure light EL, and provides an exposure light source and an optical illuminator for equalizing the illuminance of the light flux emitted from the exposure light source. It has a condenser lens that collects the exposure light EL from the optical integrator, a relay lens system, and a variable field stop that sets the illumination area on the mask M by the exposure light EL in a slit shape. A predetermined illumination area on the mask M is illuminated by the illumination optical system IL with exposure light E having a uniform illuminance distribution.
- the exposure light EL emitted from the illumination optical system IL includes, for example, ultraviolet bright lines (g-line, line, i-line) emitted from a mercury lamp and KrF excimer laser light (wavelength: 248 nm). Light (DUV light) and ArF excimer laser light
- the mask stage MST supports the mask M, and is two-dimensionally movable in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in an XY plane, and is microrotatable in the 0Z direction.
- Mask stage MST is a mask stage such as a linear motor. Driven by the edge drive MS TD.
- the mask stage driving device MS TD is controlled by the control device CONT.
- a movable mirror 50 is provided on the mask stage MST. Further, a laser interferometer 51 is provided at a position facing the movable mirror 50.
- the two-dimensional position and rotation angle of the mask M on the mask stage MST are measured in real time by the laser interferometer 51, and the measurement result is output to the control device CONT.
- the lj control device CONT drives the mask stage driving device M STD based on the measurement result of the laser interferometer 51 to position the mask M supported by the mask stage MST.
- the projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification &, and is provided at the terminal end of the substrate P side (the image plane side of the projection optical system PL). It is composed of a plurality of optical elements including an element (lens) 2, and these optical elements are supported by a lens barrel PK.
- the projection optical system PL is a reduction system whose projection magnification ⁇ is, for example, 1/4 or 1/5.
- the projection optical system PL may be either a unity magnification system or a magnification system.
- the optical element (lens) 2 at the distal end of the projection optical system PL of the present embodiment is provided so as to be detachable (replaceable) from the lens barrel PK. Liquid 1 comes in contact.
- pure water is used as the liquid 1.
- Pure water is not limited to Ar F excimer laser light, but also distant light such as ultraviolet emission lines (g-line, h-line, and i-line) emitted from a mercury lamp and KrF excimer laser light (wavelength 248 nm).
- Ultraviolet light (DUV light) can also be transmitted.
- the numerical aperture of the projection optical system using pure water for immersion exposure is set to 1 or more (about 1.0 to 1.2).
- the optical element 2 is made of fluorite. Since fluorite surface or Mg F 2, A 1 2 O 3, S i 0 the deposited surface 2 or the like, has a high affinity for water, liquid 1 over substantially the entire surface of the liquid contact surface 2 a of the optical element 2 Can be adhered to each other. That is, in the present embodiment, the liquid (water) 1 having a high affinity for the liquid contact surface 2a of the optical element 2 is supplied, so that the liquid contact surface 2a of the optical element 2 and the liquid 1 are supplied. The optical path between the optical element 2 and the substrate P can be reliably filled with the liquid 1.
- the optical element 2 may be quartz having a high affinity for water.
- a hydrophilic (lyophilic) treatment is applied to the liquid contact surface 2a of the optical element 2 so that the affinity with the liquid 1 is further increased. May be.
- the substrate stage PST supports the substrate P, and includes a Z stage 52 that holds the substrate P by a substrate holder, an XY stage 53 that supports the Z stage 52, and a base 54 that supports the XY stage 53. It has.
- the substrate stage PST is driven by a substrate stage driving device PSTD such as a return motor.
- the substrate stage driving device PSTD is controlled by the control device CONT.
- the Z stage 52 is driven, the position of the substrate P held on the Z stage 52 in the Z-axis direction (force force position) and the positions in the ⁇ , ⁇ ⁇ directions are controlled. You. Further, by driving the stage 53, the position of the substrate ⁇ ⁇ ⁇ ⁇ in the
- the ⁇ stage 52 controls the focus position and the tilt angle of the substrate ⁇ ⁇ ⁇ to auto-focus the surface of the substrate;, and aligns the surface of the substrate ⁇ with the image plane of the projection optical system PL by an expression and an auto-leveling method.
- Reference numeral 3 determines the position of the substrate X in the X-axis direction and the ⁇ -axis direction.
- the stage ⁇ and the stage ⁇ ⁇ may be provided integrally.
- a movable mirror 55 is provided on the substrate stage PST ( ⁇ stage 52).
- a laser interferometer 56 is provided at a position facing the movable mirror 55.
- the two-dimensional position and rotation angle of the substrate ⁇ ⁇ on the substrate stage PST are measured in real time by the laser interferometer 56, and the measurement result is output to the control device CONT.
- the controller CONT determines the position of the substrate P supported by the substrate stage PST by driving the substrate stage driving device PSTD based on the measurement result of the laser interferometer 56.
- an annular plate portion 57 is provided so as to surround the substrate P.
- the plate portion 57 has a flat surface 57A having substantially the same height as the surface of the substrate P held by the substrate holder.
- the plate 1 can hold the liquid 1 under the projection optical system PL.
- the liquid supply mechanism 10 supplies a predetermined liquid 1 onto the substrate P, and includes a first liquid supply unit 11 and a second liquid supply unit 12 that can send out the liquid 1, First and second supply pipes 11A and 12A are provided to connect one ends of the liquid supply sections 11 and 12 respectively.
- Each of the first and second liquid supply units 11 and 12 includes a tank for storing the liquid 1, a pressure pump, and the like.
- the first and second liquid supply sections 11 and 12 send out the first and second supply pipes 11A and 1A.
- Flow meters 17 and 18 are provided to measure the amount of liquid per unit time flowing through 2 A.
- the measurement results of the flow meters 17 and 18 are output to the controller CONT.
- the controller CONT controls the amount of liquid supplied to the substrate P from the first and second liquid supply units 11 and 12 based on the measurement results of the flow meters 17 and 18 (the amount of liquid supplied per unit time). ) Can be requested.
- the liquid recovery mechanism 20 recovers the liquid 1 on the substrate P, and includes a liquid recovery section 21 that can recover the liquid 1 and a recovery pipe 22 that connects one end to the liquid recovery section 21.
- the liquid recovery unit 21 includes, for example, a vacuum system (suction device) such as a vacuum pump and a tank for storing the recovered liquid 1.
- a vacuum system suction device
- the tanks and pressurizing pumps for the liquid supply units 11 and 12 or the vacuum system and tank for liquid recovery 21 do not need to be equipped with the exposure apparatus EX. Equipment such as the above can also be used.
- a flow path forming member 30 is arranged near the optical element 2 at the end of the projection optical system PL.
- the flow path forming member 30 is an annular member provided so as to surround the optical element 2 above the substrate P (substrate stage PST).
- the flow path forming member 30 is provided above the substrate P (substrate stage PST), and has a first supply port 13 and a second supply port 14 arranged so as to face the surface of the substrate P. .
- the flow path forming member 30 has a supply flow path 82 (82A, 82B) therein. One end of the supply flow path 82A is connected to the first supply port 13 and the other end is connected to the first liquid supply sound 151 1 via the first supply pipe 11A.
- each of the inner recovery ports 23 is formed in an arc shape, and includes four inner recovery ports 23A to 23D arranged so as to form an annular shape.
- Each of the outer recovery ports 61 is also formed in an arc shape, and is constituted by four outer recovery ports 61A to 6ID arranged so as to form an annular shape.
- the inner recovery port 23 is disposed so as to surround the optical element 2, and the outer recovery port 61 is disposed outside the inner recovery port 23 so as to form a concentric circle with the inner recovery port 23.
- the flow path forming member 3 (H) has a recovery flow path 84 (84A to 84D) corresponding to the inner recovery port 23 (23A to 23D) inside the recovery flow path. One end is connected to each of the recovery ports 23A to 23D, and the other end is connected to the liquid recovery port 1321 via the recovery pipes 22A to 22D. 1A to 61D) are connected in the middle of the recovery flow path 84 (84A-84D)
- the flow path forming member 30 includes the liquid supply mechanism 10 and the liquid recovery mechanism 20 respectively. Make up part.
- the first to fourth recovery pipes 22A to 22D each include a plurality of liquid recovery sections 21 corresponding to the force S connected to one liquid recovery section 21 and the number of recovery pipes.
- four may be provided, and each of the first to fourth recovery pipes 22A to 22D may be connected to each of the plurality of liquid recovery sections 21.
- flow meters 24A to 24D that measure the amount of liquid per unit time flowing through the first to fourth recovery pipes 22A to 22D are provided. Each is provided.
- the measurement results of the flow meters 24A to 24D are output to the controller CONT.
- the controller CONT can determine the amount of liquid (the amount of liquid recovered per unit time) recovered from the substrate P to the liquid recovery unit 21 based on the measurement results of the flow meters 24A to 24D.
- the recovery port 23 (61) of the recovery pipe 22 and the flowmeter A gas-liquid separator may be provided between the flow meter 24 and the liquid component separated by the gas-liquid separator. This makes it possible to measure the amount of liquid recovery with higher accuracy.
- the liquid supply operation of the first and second liquid supply units 11 and 12 is controlled by the controller CONT.
- the control device CONT can independently control the liquid supply amount per unit time on the substrate P by the first and second liquid supply units 11 and 12 respectively.
- the liquid 1 sent from the first and second liquid supply units 11 and 12 is supplied to the substrate P through the supply pipes 11A and 12A and the supply flow paths 82A and 82B of the flow path forming member 30. It is supplied onto the substrate P from the first and second supply ports 13 and 14 provided above.
- the liquid recovery operation of the liquid recovery unit 21 is controlled by the controller CONT.
- the controller CONT can control the amount of liquid collected by the liquid recovery unit 21 per unit time.
- the liquid 1 on the substrate P recovered from the recovery ports 23, 61 provided above the substrate P is recovered to the liquid recovery unit 21 through the recovery flow path 84 of the flow path component 30 and the recovery pipe 22. You.
- a liquid trapping surface 70 of a predetermined length for capturing the liquid 1 is formed on a lower surface (a surface facing the substrate P side) further outside the recovery port 61 of the flow path forming member 30.
- the trap surface 70 is a surface inclined with respect to the XY plane, and is separated from the surface of the substrate P (toward the top) as it goes outside the projection area AR 1 (immersion area AR 2). It is inclined.
- the trap surface 70 has been subjected to lyophilic treatment.
- the film (photoresist, antireflection film, protective coat, etc.) applied to the surface of the substrate P is usually water-repellent (liquid-repellent).
- the hydrophilic treatment (lyophilic treatment) for the trap surface 70 is performed by forming a thin film with a substance having a molecular structure having a high polarity such as alcohol.
- the trap surface 70 is made hydrophilic. That is, when water is used as the liquid 1, it is desirable to treat the trap surface 70 with a material having a large polarity and a molecular structure such as an OH group on the surface.
- FIG. 2 shows the first and second supply ports 13 and 14 formed in the flow path forming member 30, the inner recovery ports 23A to 23D, and the outer recovery ports 61A to 6ID, and the projection optical system PL.
- the projection area AR1 of the projection optical system PL is set in a rectangular shape whose longitudinal direction is in the Y-axis direction (non-scanning direction).
- the immersion area AR 2 filled with the liquid 1 is substantially in the area surrounded by the four recovery ports 23 A to 23 D so as to include the projection area AR 1 and partially on the substrate P. Formed locally.
- the immersion area AR2 only needs to cover at least the projection area AR1, and the entire area surrounded by the four recovery ports 23A to 23D does not necessarily have to be the immersion area.
- the first supply port 13 is provided on one side (—X side) in the running direction with respect to the projection area AR 1, and the second supply port 14 is provided in the same direction with respect to the projection area AR 1. It is provided on the other side (+ X side) of the direction.
- the first and second supply ports 13 and 14 are provided near the projection area AR1 and are arranged on both sides of the projection area AR1 so as to be separated in the scanning direction (X direction) and sandwich the projection area AR1.
- Each of the first and second supply ports 13 and 14 is formed in a substantially arc-shaped slit shape having a predetermined length in plan view.
- the length of the first and second supply ports 13 and 14 in the Y-axis direction is at least longer than the length of the projection area AR1 in the Y-axis direction.
- the liquid supply mechanism 10 can simultaneously supply the liquid 1 on both sides of the projection area AR1 from the first and second supply ports 13 and 14.
- the inner collection ports 23A to 23D are arranged outside the first and second supply ports 13 and 14 farther from the projection area AR1 than the first and second supply ports 13 and 14. , The first and second supply ports 13 and 14 and the projection area AR1.
- collection port 23A and collection port 23C are spaced apart in the X-axis direction and are located on both sides of projected projection area AR1.
- the port 23B and the recovery port 23D are separated from each other in the Y-axis direction and arranged on both sides of the projection area AR1.
- the first and second supply ports 13 and 14 are arranged between the projection area AR1 and the recovery ports 23A and 23C.
- Each of the recovery ports 23A to 23D is formed in a slit shape having a predetermined length in a substantially arc shape in plan view.
- the length of the recovery ports 23A and 23C in the Y-axis direction is longer than the length of the first and second supply ports 13 and 14 in the Y-axis direction.
- Each of the recovery ports 23B and 23D is formed to have substantially the same length as the recovery ports 23A and 23C.
- the recovery ports 23A to 23D are connected to the liquid recovery unit 21 via the first to fourth collection pipes 22A to 22D, respectively.
- the outer collection ports 61A to 61D are further away from the inner collection ports 23A to 23D with respect to the projection area AR1 than the inner collection ports 23A to 23D, and are located on the inner side.
- the collection ports 23A to 23D and the projection area AR1 are arranged so as to surround them.
- the collection port 61A and the collection port 61C are on the X-axis.
- the recovery port 61B and the recovery port 61D are located on both sides of the projection area AR1 while being spaced apart in the direction Is placed. That is, the inner collecting ports 23A to 23D are arranged between the outer collecting ports 61A to 61D and the projection area AR1, respectively.
- Each of the recovery rollers 618 to 610 is formed in a slit shape having a predetermined length in a substantially arc shape in plan view.
- the lengths of the recovery ports 61A and 61C in the Y-axis direction are recovery ports 23A and 23. It is longer than the length in the ⁇ axis direction.
- Each of the recovery ports 61B and 6ID has the same length as the recovery ports 61A and 61C.
- each of the plurality of recovery ports 23A to 23D and 61A to 61D is formed to have substantially the same size (length), but may have different sizes.
- the number of the recovery ports 23 (61) is not limited to four, and any number of recovery ports 23 (6 1) may be provided if they are arranged so as to surround the projection area AR1 and the first and second supply ports 13 and 14. Alternatively, the number of the recovery ports 23 and the number of the recovery ports 61 may be different.
- the recovery port 61 is formed longer than the recovery port 23, but may be formed shorter. Alternatively, a continuous annular recovery port may be used without dividing the inner recovery port and the outer recovery port.
- the slit width of the first and second supply ports (13, 14) and the slit width of the recovery ports (23A to 23D, 61A to 6 ID) are almost the same.
- the slit width of the 23D, 61A to 61D) may be larger than the slit width of the first and second supply ports (13, 14), and conversely, the slit width of the recovery port. May be smaller than the slit width of the supply port.
- FIG. 3 is a schematic perspective view of the flow path forming member 30.
- the flow path forming member 30 is an annular member provided so as to surround the optical element 2 at the end of the projection optical system PL, and includes a first member 31 and a first member 3. 2nd member placed on top of 1
- Each of the first to third members 31 to 33 constituting the flow path forming member 30 is a plate-shaped member, and a hole 31 A to which the projection optical system PL (optical element 2) can be arranged at the center thereof.
- 33 A Have.
- FIG. 4 is a perspective view showing the first member 31 arranged at the lowest stage among the first to third members.
- the first member 31 is formed on one X side of the projection optical system PL to supply the liquid 1 onto the substrate P, and formed on the + X side of the projection optical system PL And a second supply port 14 for supplying the liquid 1 onto P.
- Each of the first supply port 13 and the second supply port 14 is a through hole penetrating the first sound
- the first member 31 includes collection ports 23A, 23B, 23C, and 23D formed on the X side, the Y side, the + X side, and the + Y side of the projection optical system PL, respectively. Have.
- Each of the recovery ports 23A to 23D is also a through hole that penetrates the first member 31, is formed in a substantially arc shape in plan view, and is provided at substantially equal intervals along the periphery of the projection optical system PL. I have.
- each of the recovery ports 23A to 23D is provided outside the first and second supply ports 13 and 14.
- the distance between the first and second supply ports 13 and 14 and the substrate P is substantially the same as the distance between the recovery ports 23A to 23D and the substrate P.
- the height positions of the first and second supply ports 13 and 14 and the height positions of the collection rollers 23A to 23D are provided substantially the same.
- recovery ports 61A to 61D which are through holes penetrating the first member 31, are provided at substantially equal intervals.
- FIG. 5A is a perspective view of the second member 32 arranged at the middle stage among the first to third members as viewed from above
- FIG. 5B is a perspective view of the second member 32 as viewed from below.
- the second member 32 is formed on one X side of the projection optical system PL, and is connected to the first supply port 13 of the first member 31 when the first member 31 and the second member 32 are connected. It has a first supply hole 15 and a second supply hole 16 formed on the + X side of the projection optical system PL and connected to the second supply port 14 of the first member 31.
- the first and second supply holes 15 and 16 are through holes, and their shapes and sizes in plan view correspond to the first and second supply ports 13 and 14. That is, the first and second supply holes 15 and 16 are slit-shaped flow paths having an arc shape in plan view.
- the first member 31 and the second member 32 are connected to one X side of the projection optical system PL when the first member 31 and the second member 32 are connected.
- An inner collecting groove 25 connected to the collecting port 23A is formed, and an inner collecting groove 26 connected to the inner collecting port 23B of the first member 31 is formed on one Y side of the projection optical system PL.
- On the + X side of the PL there is formed an inner recovery groove 27 connected to the inner recovery port 23C of the first member 31.
- the inner recovery groove of the first member 31 is formed on the + Y side of the projection optical system PL.
- An inner recovery groove 28 connected to 23D is formed. Inside recovery groove 25 ⁇
- the first collection pipe 22A and the inner collection groove 25 are connected via a tapered groove 45.
- the tapered groove portion 45 is formed so as to gradually expand in the horizontal direction from the connection portion to the first recovery pipe 22A toward the inner collecting groove portion 25.
- the second recovery pipe 22B and the inner recovery groove 26 are connected via a tapered groove 46
- the inner recovery pipe 22C and the inner recovery groove 27 are connected via a tapered groove 47.
- the fourth recovery pipe 22D and the inner recovery groove 28 are connected via a tapered groove 48.
- an outer collecting groove 65 is formed which is connected to the outer j of the first member 31 and the collecting port 61A when the first member 31 and the second member 32 are connected. .
- the outer recovery groove 65 is formed to cross the tapered groove 45.
- the outer collection holes 61B, 61C, and 61C of the first member 31 are provided outside the inner collection grooves 26, 27, and 28. 6
- the outer collecting grooves 66, 67, 68 connected to the ID are formed.
- Each of the outer recovery grooves 65 to 68 is formed in a substantially arc shape in plan view so as to correspond to the shape and size of the outer recovery ports 61A to 61D.
- FIG. 6A is a perspective view of the third member 33 arranged at the uppermost stage among the first to third members when viewed from above, and FIG. 6A is a perspective view of the third member 33 when viewed from below. .
- the lower surface 33D of the third member 33 on the one X side of the projection optical system PL, the second member 32 and the third member
- a first supply groove 41 is formed to connect to the first supply hole 15 of the second member 32 when the second member 32 is connected to the first member 33.
- a second supply groove 42 connected to the second supply hole 16 is formed. First and second supply grooves 41,
- the shapes and sizes of the first and second supply holes 15 and 16 (and the The first supply port 13 is formed in a substantially arc shape in plan view so as to correspond to 13 and 14). Further, the first supply pipe 11 A and the first supply groove 41 are connected via a tapered groove 43.
- the tapered groove portion 43 is formed so as to gradually expand in the horizontal direction from the connection portion to the first supply pipe 11A toward the first supply groove portion 41.
- the second supply pipe 12 A and the second supply groove 42 are connected via a tapered groove 44.
- the first to third members 31 to 33 are made of, for example, a metal such as stainless steel, titanium, aluminum, or an alloy containing them, and the holes and grooves of the members 31 to 33 are made of, for example, It is formed by electric discharge machining. After electric discharge machining of the holes and grooves of the members 31 to 33, the flow passage forming member 30 is formed by joining these members 31 to 33 using an adhesive, a crimping or fastening member. It is formed.
- the liquid contact surfaces of the members 31 to 33 are preferably subjected to electro-horn polishing or non-conductive oxide film treatment. Further, each member constituting the liquid supply mechanism 10 and the liquid recovery mechanism 20 including the flow path forming member 30 may be formed of a synthetic resin such as polytetrafluoroethylene.
- a first supply channel 82A connected to the first supply pipe 11A is formed.
- the second supply groove portion 44, the second supply groove portion 42, the second supply hole portion 16, and the second supply port 14 respectively, the second supply pipe 1 2
- a second supply channel 82B connected to A is formed. Then, the liquid 1 sent from each of the first and second liquid supply units 11 and 12 is supplied to the first and second supply pipes 11A and 12A, and the first and second supply passages. It is supplied onto the substrate P from above the substrate P through 82A and 82B.
- the first recovery flow path 8 connected to the first recovery pipe 22A is connected. 4 A is formed.
- the second recovery flow path connected to the second recovery pipe 22B is connected. 8B is formed, and the tapered groove 47, the recovery grooves 27, 67, and the recovery port 23C are connected to each other to connect to the third recovery pipe 22C.
- a recovery channel 84 C is formed, and each of the tapered groove portion 48, the recovery groove portions 28, 68, and the recovery port 23 D is formed.
- a fourth recovery flow path 84D connected to the fourth recovery pipe 22D is formed. Then, the liquid 1 on the substrate P is sucked and recovered from above the substrate P via the first to fourth recovery channels 84A to 84D and the first to fourth recovery pipes 22A to 22D. Is done.
- the first and second supply pipes 11A and 12A are connected to the tapered grooves 43 and 44, respectively, so that the first and second supply ports 13 with the longitudinal direction in the Y-axis direction are provided.
- the liquid supply can be performed by making the flow rate distribution and the flow velocity distribution uniform at each of the positions (14) and (14).
- the tapered grooves 45 to 48 are connected to the recovery pipes 22A to 22D, the liquid can be recovered with a uniform recovery force.
- FIG. 7 is a cross-sectional view taken along the line AA of FIG. 3
- FIG. 8 is a cross-sectional view taken along the line BB of FIG.
- First supply channel 82A provided on one X side of system PL
- + Y side The fourth recovery channel 82D has the same configuration.
- the second supply flow path 82B is composed of the tapered groove 44, the second supply groove 42, the second supply hole 16 and the second supply port 14.
- the second supply pipe 12A and the second supply flow path 82B (the flow path forming member 30) are connected via a joint 80.
- the liquid 1 delivered from the second liquid supply unit 12 flows into the second supply flow path 82B through the second supply pipe 12A.
- the liquid 1 flowing into the second supply channel 82B flows in a substantially horizontal direction (XY plane direction) in the tapered groove portion 44 of the second supply channel 82B, and bends at a substantially right angle in the vicinity of the supply groove portion 42. Then, it flows in the vertical direction (1Z direction) at the second supply hole 16 and the second supply port 14, and is supplied onto the substrate P from above the substrate P.
- the third recovery flow path 84C includes the recovery ports 23C and 61C, the recovery grooves 27 and 67, and the tapered groove 47.
- the third recovery pipe 22C and the third recovery channel 84C (the channel forming member 30) are connected via the joint 81.
- the liquid 1 on the substrate P is directed vertically upward to the third recovery channel 84C through the recovery ports 23C and 61C provided above the substrate P. (+ Z direction Flow).
- the liquid 1 that has flowed into the third recovery channel 84C can be changed its flow direction in the horizontal direction near the recovery grooves 27, 67, and flows in the tapered groove 47 almost horizontally. Thereafter, the liquid is sucked and collected by the liquid collecting part 21 through the third collecting pipe 22C.
- a small gap 100 is formed between the inner law surface 30 T of the flow path forming member 30 and the side surface 2 T of the optical element 2 at the end end of the projection optical system PL that is in contact with the liquid 1. ing.
- the minute gap 100 is provided for vibratingly separating the optical element 2 of the projection optical system PL and the flow path forming member 30, thereby providing a liquid recovery mechanism 10 and a liquid recovery mechanism 10.
- the vibration force generated by the mechanism 20 can be prevented from being transmitted to the projection optical system pL.
- Each of the liquid supply mechanism 10 and the liquid recovery mechanism 20 including the flow path forming member 30 is supported by a support member other than the projection optical system PL and the support member that supports the projection optical system PL.
- liquid repellent (water-repellent) treatment be performed on the inner side surface 30T of the flow path forming member 30 forming the minute gap 100 and the upper side of the side surface 2T of the optical element 2.
- the liquid repellent treatment include a coating treatment using a material having liquid repellency.
- the material having liquid repellency include a fluorine-based compound, a silicon compound, and a synthetic resin such as polyethylene.
- the thin film for the surface treatment may be a single layer film or a film composed of a plurality of layers.
- the exposure apparatus EX of the present embodiment uses the mask M and the substrate P in the X-axis direction.
- the pattern image of the mask M is projected and exposed on the substrate P.
- the mask M is placed in a rectangular projection area AR 1 immediately below the end of the projection optical system PL. A part of the pattern is projected. Furthermore, the mask M is in the X direction
- the substrate P is moved by the XY stage 53 at the velocity ⁇ ⁇ V ( ⁇ is the projection magnification) in the + X direction (or 1: X direction) in synchronization with the movement of the substrate P in the (or + X direction) at the velocity V. .
- a plurality of shot areas are set on the substrate ⁇ . After the exposure of one shot area is completed, the next shot area is moved to the scanning start position by the stepping movement of the substrate ⁇ . ⁇
- the scanning exposure process is sequentially performed on each shot area while moving the substrate ⁇ by the scanning method. In performing the exposure processing, the controller CONT drives the liquid supply mechanism 10 to start the liquid supply operation on the substrate P.
- the liquid 1 delivered from each of the first and second liquid supply units 11 and 12 of the liquid supply mechanism 10 flows through the supply pipes 11A and 12A, and then flows into the flow path forming member 30. It is supplied onto the substrate P via the formed supply channels 82A and 82B.
- the liquid 1 supplied onto the substrate P flows below the projection optical system PL according to the movement of the substrate P.
- the liquid 1 moves under the projection optical system PL in the same direction as the substrate P in the + X direction, almost at the same speed as the substrate P. Flows.
- FIG. 9 is a schematic diagram showing a state when an exposure operation is being performed on the substrate P.
- the exposure light EL emitted from the illumination optical system IL and passing through the mask M is irradiated on the image plane side of the projection optical system PL, whereby the pattern of the mask M is projected onto the projection optical system PL and the liquid immersion area.
- the substrate P is exposed through the liquid 1 of the AR 2.
- the control unit CONT supplies the liquid onto the substrate P by the liquid supply mechanism 10.
- the operation and the liquid recovery operation on the substrate P by the liquid recovery mechanism 2 O are performed.
- the liquid immersion area AR2 is favorably formed on the substrate P.
- the liquid supply mechanism 10 simultaneously supplies the liquid 1 onto the substrate P from both sides of the projection area AR1 from the first and second supply ports 13 and 14.
- the liquid 1 supplied onto the substrate P from the first and second supply ports 13 and 14 satisfactorily flows between the substrate P and the lower end surface of the optical element 2 at the end ⁇ 5 of the projection optical system PL. It spreads and forms the immersion area AR2 at least wider than the projection area AR1.
- the control device CONT controls the liquid supply operation of the first and second liquid supply units 11 and 12 of the liquid supply mechanism 10.
- the liquid supply amount per unit time supplied before the projection area AR1 in the scanning direction may be set to be larger than the liquid supply amount supplied on the opposite side.
- the controller CONT determines the amount of the liquid 1 supplied from the one X side (that is, the supply port 13) to the projection area AR 1 by + X From the amount of liquid 1 supplied from the side (ie supply port 14) Do more.
- the amount of the liquid 1 supplied from the + X side to the projection area AR1 is made larger than the amount of the liquid 1 supplied from the 1X side. .
- the amount of the liquid ⁇ : 1 that moves in the projection area AR 1 ⁇ in the + X direction increases, and the base P cannot be completely collected by the inner collection port 23 C. Large amounts of spillage may occur outside the plate.
- the liquid 1 moving in the + ⁇ direction is recovered from the outer recovery port 61 C provided further outside the inner recovery port 23 C, the liquid 1 remains on the substrate ⁇ , the periphery of the substrate ⁇ , etc. Inconveniences such as spills and scattering are suppressed.
- the liquid is trapped by the trap surface 70 provided on the lower surface of the flow path forming member 30 on the + ⁇ side. Outflow can be more reliably prevented.
- the moving direction is switched, and when the substrate ⁇ moves in the ⁇ X direction, the liquid moved to the + ⁇ side from the recovery port 23 C when the substrate ⁇ moves in the ⁇ X direction.
- the provision of the outer collection port 61C allows the remaining liquid (droplet) 1 to be removed from the outer collection port 61C. Can be recovered.
- the inner recovery port 23 for recovering the liquid 1 is provided outside the first and second supply ports 13 and 14, and the outer recovery port 61 is provided outside thereof. Even if a situation occurs in which the upper liquid 1 cannot be completely recovered at the inner recovery port 23, the liquid 1 to be discharged without being completely recovered can be recovered at the outer recovery port 61. Therefore, it is possible to prevent inconveniences such as a decrease in exposure accuracy caused by the liquid remaining on the substrate ⁇ and the liquid 1 flowing out of the substrate ⁇ .
- the inner recovery port 23 and the outer recovery port 61 are provided so as to surround the first and second supply ports 13 and 14, and the projection area AR1, the outflow and scattering of the liquid 1 are performed. However, residue can be more reliably prevented.
- the recovery port in the present embodiment is a double recovery port composed of an inner recovery port and an outer recovery port, it is a triple or quadruple recovery port further provided with a recovery port outside the recovery port.
- the number is arbitrary.
- the outer recovery port 61 is connected to the recovery flow connected to the inner recovery port 23.
- a recovery flow path connected to the outer recovery port 61 may be provided independently of the recovery flow path 84.
- the outer collection port 61 is provided so as to surround the projection area AR1, but may be provided at some positions.
- the outer collecting ports 61B and 61D may be omitted, and the outer collecting ports (61A and 61C) may be provided only on both sides in the scanning direction with respect to the projection area AR1.
- the lyophilic treatment can be applied to the inner wall surface of the recovery flow path 84 near the recovery ports 23 and 61.
- a hydrophilic film for the recovery ports 23 and 61 may be formed by forming a thin film with a substance having a highly polar molecular structure such as alcohol.
- the hydrophilicity can be imparted to the inner wall surface of the recovery channel 84 near the recovery ports 23 and 61 by irradiating ultraviolet rays (UV).
- UV ultraviolet rays
- the lyophilic treatment can be applied to the surface of the flow path of the liquid supply mechanism 10 and the liquid recovery mechanism 20 through which the liquid 1 flows, other than in the vicinity of the recovery ports 23 and 61.
- liquid 1 may slightly remain on substrate P or substrate stage PST.
- the vacuum system of the liquid recovery mechanism 20 may be driven to suck and recover the liquid 1 on the substrate P and the substrate stage PST through the recovery port 23 (6 1) of the liquid recovery mechanism 20.
- the control unit CONT uses the collection port 23 (6 1) of the liquid collection mechanism 20 located above the substrate P and the substrate The liquid 1 on the substrate P or the substrate stage PST is recovered by relatively moving the substrate stage PST which can move while holding P.
- the first and second supply ports 13 and 14 of the liquid supply mechanism 10 are provided on both sides in the running direction (X-axis direction) with respect to the projection area AR1.
- separate supply ports may be provided on both sides in the non-scanning direction (Y-axis direction), and the plurality of supply ports may be combined to supply the liquid.
- the supply ports on both sides of the projection area AR1 in the scanning direction may be omitted.
- the supply port may be provided in an annular shape so as to entirely surround the projection area AR1, or a supply port may be provided at one location near the projection area AR1.
- the trap surface 70 is provided on the lower surface of the first member 31 only on both sides in the scanning direction with respect to the projection area AR1, but is provided in the non-scanning direction. A configuration is also possible. On the other hand, since the liquid 1 easily flows out on both sides in the scanning direction, the liquid 1 to be discharged can be captured well even if the trap surface 70 is provided only on both sides in the scanning direction of the projection area AR1. .
- the trap surface 70 does not need to be a flat surface, and may be, for example, a shape combining a plurality of planes.
- the trap surface 70 may be a curved surface, and may be subjected to a surface area enlarging process, specifically, a rough surface process.
- the flow path forming member 30 is formed using three members, but the number of members is not limited to this. Also, in the present embodiment, the members 3 forming the flow path forming member 30:! To 33 are square plate members, but may be circular plate members or long in the X-axis direction. It may be an elliptical plate-like member.
- the flow paths to the first and second supply ports 13 and 14 and the flow paths to the recovery ports 23 A, 23 B, 23 C and 23 D are formed in separate members. Alternatively, a flow path may be formed in a separate member for each port.
- FIG. 10 is a cross-sectional view of the vicinity of the flow path forming member 30, and FIG. 11 is a view showing a positional relationship between the supply and recovery ports and the projection area AR1.
- a description will be given assuming that the liquid recovery mechanism 20 does not have the outer recovery port (61) and has only the recovery port (inner recovery port) 23.
- the porous material 90 is disposed inside the recovery port 23. As shown in FIG. 10 and FIG. 11, the porous material 90 is arranged in the entire recovery flow channel 84 in the flow channel forming member 30.
- the porous material 90 for example, a porous solid neo-material such as porous ceramics, a sponge-like member, or a mesh-like member can be used.
- the porous material 90 is, for example, near the collection port 23.
- the configuration may be such that it is arranged in a part of the recovery flow channel 84, such as at the side or at the corner of the recovery flow channel 84.
- the recovery port 23 and the recovery groove 25 to 2-5 are set in a state where the first to third members 31 to 33 are separated from each other. 8, and the porous material 90 is arranged in the tapered groove portions 45 to 48, etc., and the first to third members 31 to 33 are connected to each other to form a porous material in the recovery channel 84.
- 5 material 30 can be formed.
- a local immersion method is used in which a liquid immersion area AR 2 is formed in a part of the substrate P, and the substrate P is collected through a collection port 23 (23 A to 23 D) as a liquid recovery mechanism 20.
- the liquid 1 on the substrate P is suctioned and collected from above using a vacuum system (vacuum pump).
- a vacuum system vacuum pump
- a situation may occur in which the liquid 1 on the substrate P is rotated together with the surrounding gas (in such a manner that the surrounding gas is absorbed).
- the liquid recovery mechanism 20 collects the liquid 1 together with the surrounding gas through the recovery port 23, and the liquid 1 intermittently flows into the recovery flow path 84 (84A to 84D). I do.
- the liquid 1 flowing into the recovery flow path 84 becomes a granular form (droplet), and the droplet collides with the recovery flow path 84 and the recovery pipe 22 to generate noise and vibration.
- This is probably one of the factors.
- the size of the collected droplets is large, the force (impulse) when the collected flow path hits the inner wall of the collection pipe will increase, and the generated noise and vibration will increase. Therefore, by arranging the porous material 90 inside the recovery port 23 as in the present embodiment, the size of the liquid droplet recovered from the recovery port 23 is reduced (fine). Can be turned. Therefore, the force (impulse) when the droplet hits the inner wall of the collection flow path and the collection pipe can be reduced, so that the generated noise and vibration can be reduced.
- the porous material 90 is not limited to the recovery port (recovery flow path), but can be disposed at a supply port (supply flow path). In addition, it is of course possible to arrange the porous material 9Q inside the outer collection port 61 of the first embodiment.
- a characteristic part of the present embodiment is that a capillary, which is a capillary member, is provided inside the recovery port 23. It is in the point where the aggregate of 9 1 is arranged.
- an aggregate of a plurality of thin tubes 91 is arranged inside the recovery port 23.
- the thin tube 91 is arranged so that its longitudinal direction is along the recovery flow channel 84.
- the collection 23 is divided into a plurality of flow paths by the aggregate of the thin tubes 91.
- the thin tube 91 is arranged in a part of the recovery flow channel 84 extending vertically from the recovery port 23.
- two thin tubes 91 are arranged in the slit width direction of the recovery port 23.
- the thin tube 91 is made of, for example, glass, metal such as copper, synthetic resin, rubber, or the like.
- glass or metal since glass or metal has hydrophilicity, the liquid on the substrate P can be smoothly collected by using it as a material for forming the thin tube 91.
- the liquid droplets collected from the collection port 23 can be collected in a small (fine) state.
- the force (impulse) when the droplet hits the inner wall of the recovery channel and the recovery pipe can be reduced, and the generated noise and vibration can be reduced.
- the capillary 91 has an inner diameter of, for example, 10 ⁇ ! Approximately 1 mm is used. When the inner diameter is 1 mm or more, the diameter of the droplet formed by passing through the thin tube 91 may become large and it may not be possible to sufficiently suppress the vibration, and when the inner diameter is 10 ⁇ m or less. In addition, there is a possibility that the liquid cannot be suctioned and collected properly due to the viscosity of the liquid. Note that the inner diameter of the thin tube 91 is not limited to the above value depending on the permissible vibration level, the type of liquid, and the like.
- two thin tubes 91 are arranged in the slit width direction of the recovery port 23, but one or three or more arbitrary thin tubes may be used. . Even if the droplet formed by flowing through the thin tube 91 hits the inner wall of the internal flow channel and the collection tube, the droplet should be sized to generate vibration that does not affect the exposure accuracy. If this is possible, the inner diameter of the thin tube 91, the number of tubes to be installed, or the arrangement can be arbitrarily set. Also, in the vicinity of the recovery port 23, a large number of thin first thin tubes are arranged, and a plurality of second thin tubes thicker than the first thin tube are provided downstream of the recovery flow channel 84 (the recovery pipe 22 side).
- the diameter of the thin tube to be arranged may have a distribution with respect to the direction of the flow path such as arrangement. Also, in the width direction of the collection port 23, there is a distribution in the diameter It is also possible. Further, not limited to an aggregate of a plurality of thin tubes, a plate portion neo (capillary plate) having a large number of small flow paths (holes) may be arranged inside the recovery port.
- a plate portion neo capillary plate having a large number of small flow paths (holes) may be arranged inside the recovery port.
- the thin tube 91 is provided near the recovery port 23.However, for example, the thin tube 91 is provided at a predetermined part of the recovery channel 84, such as a corner of the recovery channel 84. Or a configuration provided in all of the recovery flow channels 84. When the capillary 91 is provided in the vicinity of the corner of the recovery channel 84 or in the entire recovery channel 84, the capillary 91 may be bent at the corner of the channel.
- the thin tube 90 can be arranged at the supply port (supply flow path), or can be arranged inside the outer collection port 61 of the first embodiment.
- the recovery port 23, the recovery groove 25-28, and the tapered groove 4 are arranged in the same manner as in the above-described procedure for arranging the porous material 90. After arranging the thin tubes 91 on 5 to 48, etc., the first to third members 31 to 33 may be connected.
- a characteristic part of the present embodiment is that a brush-like member 92 which is a capillary member is disposed inside the spiral 23.
- a brush-like member 92 is disposed inside the collection port 23.
- the brush-like sound [3 material 92] is, for example, a glass fiber or a metal fiber bundled by a holding portion 93, and is arranged so that the longitudinal direction thereof is along the recovery flow path 84.
- the brush member 92 is disposed in a part of the recovery flow channel 84 extending in the vertical direction from the recovery port 23, and the holding portion 93 that holds the brush member 92 is provided. It is attached to the inner wall of the recovery channel 94.
- the brush-like member 92 inside the recovery port 23, the liquid 1 collected from the collection b 23 can be passed through the brush-like member 92 to be small (fine).
- the liquid droplets can be collected 1 ⁇ , the force (impulse) when the liquid droplets hit the collection channel and the inner wall of the collection pipe can be reduced, and the generated noise and vibration can be reduced.
- the brush-like member 92 is arranged in a portion of the recovery channel 84 extending vertically from the recovery port 23.
- a configuration may be provided at a predetermined part of the recovery flow channel 84 such as a bent corner or a horizontal portion (tapered groove portions 45 to 48), or may be provided at the entire recovery flow channel 84.
- the brush-like member 92 can be arranged at the supply port (supply channel), or can be arranged inside the outer collection port 61 of the first embodiment.
- the recovery port 23 and the recovery groove 25 to 2-5 are used. 8, and after the brush-like member 92 is disposed in the tapered groove portions 45 to 48, the first to third members 31 to 33 may be connected.
- porous material 90, thin tube 91, and brush-like member 92 can be appropriately combined and arranged inside the recovery port 23 (recovery flow path 84).
- a configuration is possible in which a porous material 90 is disposed in the vicinity of the recovery port 23 of the recovery flow channel 84, and a thin tube 91 is provided on the downstream side of the flow channel (the recovery pipe 22 side).
- a configuration is also possible in which the and are alternately arranged in the flow direction.
- the characteristic part of this embodiment is that the liquid supply amount from the first and second supply ports 13 and 14 and the liquid from the recovery port 23 are so set that only the liquid 1 is recovered from the recovery port 23.
- the point is to control at least one of the collection amount.
- the control device CONT controls the collection port 2 by controlling at least one of the liquid supply amount and the liquid recovery amount by the liquid supply mechanism 10 and the liquid recovery mechanism 20. Control so that only liquid is collected from 3.
- the control device CONT controls the liquid recovery amount while keeping the liquid supply amount constant while monitoring the measurement results of the flow meters 17, 18, and 24. Adjust so that only liquid 1 is recovered from recovery port 23. That is, in the present embodiment, the liquid immersion area AR2 is formed so that the recovery port 23 (23A to 23D) is covered with the liquid 1, and only the liquid 1 is recovered from the recovery port 23. I have to.
- the liquid 1 As described above, by collecting the liquid 1 together with the surrounding gas from the collection port 23, the liquid 1 intermittently flows into the collection channel 84, and the formed droplets are collected by the collection channel ⁇ collection tube. Power to hit the inner wall of This is considered to be a cause of vibration and the like. Therefore, by recovering only the liquid 1 from the recovery port 23, generation of vibration can be suppressed.
- the control device C ONT controls the liquid recovery amount by the liquid recovery mechanism 20 based on the measurement result of the flow meter 24. If liquid 1 is collected together with the solid gas, the liquid collection volume per unit time measured by flow meter 24 will be smaller than when only liquid 1 is collected. Show. ⁇ The lj control device C O NT adjusts the liquid recovery amount based on the measurement result of the liquid recovery amount by the flow meter 24. Specifically, if the measured value of the flow meter 24 decreases, the amount of gas collected together with the liquid increases, so the controller CONT determines the amount of liquid collected (the collecting power of the liquid collecting unit 21). ) Is controlled to increase the liquid volume (liquid volume) in the immersion area AR2.
- the liquid supply amount by the liquid supply mechanism 10 only the liquid 1 is recovered from the recovery port 23. May be controlled, or both the liquid supply amount by the liquid supply mechanism 10 and the liquid recovery amount by the liquid recovery mechanism 20 may be controlled.
- the liquid supply amount is controlled based on the measurement result of the liquid supply amount by the flow meters 17 and 18, so that the liquid in the immersion area AR 2 is controlled. The amount can be adjusted well.
- the control device CONT drives the liquid supply mechanism 10 to form the liquid immersion area AR2.
- Start liquid supply At this time, the formed liquid immersion area AR 2 supplies the liquid supply amount for closing the recovery port 23, in other words, information about the liquid volume of the liquid immersion area AR 2 sufficient to close the recovery port 23.
- the controller CONT can perform the liquid supply operation while monitoring the measurement results of the liquid supply amount by the flow meters 17 and 18. it can. By doing so, it is possible to prevent a situation in which the liquid is recovered by injecting the gas.
- a liquid crystal is formed between the projection optical system PL and the substrate P.
- the control device CONT is arranged so that the end of the immersion area AR_ 2 is located within a predetermined range outside the recovery port 23. Based on the detection results of the liquid sensors 95A, 95B, at least one of the liquid supply amount from the first and second supply ports 13, 14 and the liquid recovery amount from the recovery port 23 is controlled. It may be.
- the liquid sensors 95A and 95B detect the presence or absence of liquid by projecting detection light downward (substrate P side), for example.
- the state of reflected light of the projected detection light changes depending on whether liquid exists below the liquid sensor 95 A (95 B) or not, so the liquid sensor 95 A (95 B) By detecting the reflected light of the projected detection light, it is possible to detect whether or not the liquid (that is, the end of the liquid immersion area AR2) exists below the liquid sensor 95A (95B). it can.
- the liquid sensor 95A is disposed near the recovery port 23, and the liquid senna 95B is located farther than the liquid sensor 95A with respect to the projection area AR1. It is located outside of 95 A.
- these two liquid sensors 95 A, 95 Bf ⁇ , and four recovery ports 23 A to 23 D are arranged corresponding to each.
- the detection results of the liquid sensors 95A and 95B are output to the control device CONT, and the control device CONT adjusts the position of the end of the liquid immersion area AR2 so as to be located between the liquid sensors 95A and 95B. And controlling at least one of the liquid supply amount and the liquid recovery amount.
- the control unit CONT controls at least one of the liquid supply amount and the liquid recovery amount so that the end of the liquid immersion area AR 2 is located in a range between the liquid sensors 95 A and 95 B.
- the liquid immersion area AR2 is formed so as to close the recovery port 23 (23A to 23D) with the liquid 1, so as to prevent inconveniences such as generation of vibration due to gas infiltration and outflow of liquid, and An immersion area AR 2 can be formed.
- the liquid 1 is composed of pure water. Pure water can be easily obtained in large quantities at semiconductor manufacturing plants, etc., and the photoresist on the substrate P It has the advantage of less adverse effects on optical elements (lenses). In addition, pure water has no adverse effect on the environment and has an extremely low impurity content, so that it also has a function of cleaning the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. Can be expected.
- the refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be approximately 1.44, and an ArF excimer laser light (wavelength 1) is used as the light source of the exposure light EL.
- the wavelength is shortened to l, n, that is, about 134 nm on the substrate P, and a high resolution is obtained.
- the depth of focus is expanded about n times, that is, about 1.44 times as compared with that in the air, when it is sufficient to secure the same depth of focus as when used in the air, the projection optical system
- the numerical aperture of the PL can be further increased, and this also improves the resolution.
- the optical element 2 is attached to the tip of the projection optical system PL, and this lens can be used to adjust the optical characteristics of the projection optical system PL, for example, aberrations (spherical aberration, coma, etc.).
- the optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL.
- a parallel plane plate that can transmit the exposure light EL may be used.
- the optical element is not replaced by the optical element but is replaced by the pressure. You may fix firmly so that it may not move.
- the space between the projection optical system PL and the surface of the substrate P is filled with the liquid 1.
- the liquid A configuration that satisfies 1 may be used.
- the liquid 1 of the present embodiment is water, but may be a liquid other than water.
- the light source of the exposure light EL is an F 2 laser
- the F 2 laser light does not transmit water, so the liquid 1 can transmit the F 2 laser light
- PFPE perfluorinated polyether
- other liquids that have transparency to the exposure light EL, have the highest possible refractive index, and are stable with respect to the photoresist applied to the projection optical system PL and the substrate P surface for example, (Cedar oil) can also be used.
- the surface treatment is performed according to the polarity of the liquid 1 to be used.
- the substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin-film magnetic head, or a mask or a mask used in an exposure apparatus.
- a reticle master synthetic quartz, silicon wafer, etc. is applied.
- the exposure apparatus EX is a step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by synchronously moving the mask M and the substrate P.
- the present invention can also be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is exposed collectively while the substrate P is stationary and the substrate P is sequentially moved stepwise.
- the present invention is also applicable to a step-and-stitch type dew / t apparatus for transferring at least two patterns partially overlaid on the substrate P.
- the present invention is JP 5 F1 0 1 63 099, JP-A No. 1 0 2 1478 3 No. (corresponding to US Patent 6, 341, No. 007, 6, 400, 441 Patent, 6, 5 49, Nos. 269 and 6,590,634) and Japanese Patent Publication No. 2000-505958 (corresponding U.S. Pat. Nos. 5,969,441) separately mount substrates to be processed such as wafers. It can also be applied to a twin-stage type exposure apparatus equipped with two stages that can be moved independently in the X and Y directions.
- the type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto a substrate P, but may be an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin-film magnetic head, an imaging device (CCD). Alternatively, the present invention can be widely applied to an exposure apparatus for manufacturing a reticle or a mask.
- each of the stages PST and MST may be of a type that moves along a guide, or may be a guideless type without a guide.
- the drive mechanism for each of the stages PST and MST consists of a magnet unit in which magnets are arranged two-dimensionally and an armature unit in which a coil is arranged two-dimensionally.
- a planar motor that drives each stage PST and MST may be used.
- one of the magnet unit and the armature unit may be connected to the stage pST, MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stage PST, MS #.
- the reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL, as described in Japanese Patent Application Laid-Open No. 8-166645 (US Pat. No. 5,528,118). It may be mechanically released to the floor (ground) using the frame neo. To prevent the reaction force generated by the movement of the mask stage MST from being transmitted to the projection optical system PL, refer to Japanese Patent Application Laid-Open No. H08-330224 (corresponding to US Pat. No. 5,874,820). As described in), it may be mechanically released to the floor (ground) using a frame member.
- the exposure apparatus EX of the present embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. To ensure these various precisions, before and after this assembly, adjustments to achieve optical precision for various optical systems, adjustments to achieve mechanical precision for various mechanical systems, various Electric systems will be adjusted to achieve electrical accuracy.
- the process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustments are made to ensure the various precisions of the entire exposure apparatus. It is desirable that the exposure apparatus be manufactured in a clean room where the temperature and cleanliness are controlled.
- a micro device such as a semiconductor device has a step 201 for designing the function and performance of the micro device, a step 202 for fabricating a mask (reticle) based on this design step, Step 203 for manufacturing a substrate which is a substrate of the device, Step 204 for exposing a mask pattern to the substrate using the exposure apparatus EX of the above-described embodiment, Step for assembling a device (dicing process, bonding process) , Including packaging process) 205, inspection step 20 Manufactured after 6 mag.
- An exposure apparatus is an exposure apparatus that exposes the substrate by projecting an image of the pattern onto the substrate via a projection optical system and a liquid, the exposure apparatus including: a projection area on which the image of the pattern is projected; A liquid supply mechanism for supplying a liquid onto the substrate from above the substrate through the supply port, and a liquid supply mechanism provided at a position farther from the projection area than the supply port; A first collection port, and a second collection port provided at a position farther from the projection area than the first collection port, wherein the second collection port is provided from above the substrate through the first collection port and the second collection port.
- the present invention relates to an exposure apparatus provided with a liquid recovery mechanism for recovering a liquid on a substrate.
- An exposure apparatus is an exposure apparatus that exposes the substrate by projecting an image of a pattern onto the substrate via a projection optical system and a liquid, and has a collecting roller above the substrate.
- An exposure apparatus comprising: a liquid recovery mechanism that recovers a liquid on the substrate from above the substrate through the recovery port; and a porous material disposed inside the recovery port.
- An exposure apparatus is an exposure apparatus that exposes the substrate by projecting an image of a pattern onto the substrate via a projection optical system and a liquid, and has a collecting roller above the substrate.
- An exposure apparatus comprising: a liquid recovery mechanism configured to recover a liquid on the substrate from above the substrate through the recovery port; and a capillary member disposed inside the recovery port.
- An exposure apparatus is an exposure apparatus that exposes the substrate by projecting an image of the pattern onto the substrate via a projection optical system and a liquid, the exposure apparatus including: a projection area on which the image of the pattern is projected; A liquid supply mechanism having a supply port nearby and supplying liquid onto the substrate from above the substrate through the supply port; and a projection area and the supply port. A liquid recovery mechanism configured to recover the liquid on the substrate from above the substrate through the recovery port, and the supply so that only the liquid is recovered from the recovery port.
- a control system for controlling at least one of a liquid supply amount from a port and a liquid recovery amount from the recovery port.
- the exposure apparatus of the present invention forms an immersion area on a part of the substrate, and irradiates the substrate with exposure light via a liquid that forms the immersion area and a projection optical system, thereby exposing the substrate.
- the present invention relates to an exposure apparatus that performs exposure, and includes a detector that detects an end of the liquid immersion area.
- the device manufacturing method of the present invention relates to a device manufacturing method using the above exposure apparatus.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005514126A JP4444920B2 (ja) | 2003-09-19 | 2004-09-16 | 露光装置及びデバイス製造方法 |
US11/374,953 US7924402B2 (en) | 2003-09-19 | 2006-03-15 | Exposure apparatus and device manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-328997 | 2003-09-19 | ||
JP2003328997 | 2003-09-19 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/374,953 Continuation US7924402B2 (en) | 2003-09-19 | 2006-03-15 | Exposure apparatus and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005029559A1 true WO2005029559A1 (ja) | 2005-03-31 |
Family
ID=34372923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/014000 WO2005029559A1 (ja) | 2003-09-19 | 2004-09-16 | 露光装置及びデバイス製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7924402B2 (ja) |
JP (1) | JP4444920B2 (ja) |
WO (1) | WO2005029559A1 (ja) |
Cited By (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005191344A (ja) * | 2003-12-26 | 2005-07-14 | Nikon Corp | 露光装置及びデバイス製造方法 |
JP2005303316A (ja) * | 2004-04-14 | 2005-10-27 | Asml Netherlands Bv | リソグラフィック装置及びデバイス製造方法 |
JP2005347617A (ja) * | 2004-06-04 | 2005-12-15 | Nikon Corp | 露光装置及びデバイス製造方法 |
JP2005353820A (ja) * | 2004-06-10 | 2005-12-22 | Nikon Corp | 露光装置及びデバイス製造方法 |
EP1720073A1 (en) * | 2005-05-03 | 2006-11-08 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007035934A (ja) * | 2005-07-27 | 2007-02-08 | Nikon Corp | 露光装置及びデバイス製造方法 |
WO2007023813A1 (ja) | 2005-08-23 | 2007-03-01 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
WO2007055199A1 (ja) | 2005-11-09 | 2007-05-18 | Nikon Corporation | 露光装置及び方法、並びにデバイス製造方法 |
WO2007058354A1 (ja) | 2005-11-21 | 2007-05-24 | Nikon Corporation | 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置 |
JP2007142013A (ja) * | 2005-11-16 | 2007-06-07 | Canon Inc | 露光装置及びデバイス製造方法 |
WO2007066692A1 (ja) | 2005-12-06 | 2007-06-14 | Nikon Corporation | 露光方法、露光装置、及びデバイス製造方法 |
WO2007066679A1 (ja) | 2005-12-06 | 2007-06-14 | Nikon Corporation | 露光装置、露光方法、投影光学系及びデバイス製造方法 |
WO2007077875A1 (ja) | 2005-12-28 | 2007-07-12 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
WO2007077925A1 (ja) | 2005-12-28 | 2007-07-12 | Nikon Corporation | パターン形成方法及びパターン形成装置、並びにデバイス製造方法 |
WO2007094470A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007094431A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007094407A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007094414A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007097380A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | パターン形成装置及びパターン形成方法、移動体駆動システム及び移動体駆動方法、露光装置及び露光方法、並びにデバイス製造方法 |
WO2007097379A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | パターン形成装置、マーク検出装置、露光装置、パターン形成方法、露光方法及びデバイス製造方法 |
WO2007097466A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | 測定装置及び方法、処理装置及び方法、パターン形成装置及び方法、露光装置及び方法、並びにデバイス製造方法 |
WO2007105645A1 (ja) | 2006-03-13 | 2007-09-20 | Nikon Corporation | 露光装置、メンテナンス方法、露光方法及びデバイス製造方法 |
JP2007294947A (ja) * | 2006-04-14 | 2007-11-08 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
WO2007136052A1 (ja) | 2006-05-22 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
WO2007136089A1 (ja) | 2006-05-23 | 2007-11-29 | Nikon Corporation | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
WO2007135990A1 (ja) | 2006-05-18 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
WO2007138834A1 (ja) | 2006-05-31 | 2007-12-06 | Nikon Corporation | 露光装置及び露光方法 |
WO2008001871A1 (fr) | 2006-06-30 | 2008-01-03 | Nikon Corporation | Procédé de maintenance, procédé d'exposition et procédé de fabrication d'appareil et de dispositif |
US7394522B2 (en) | 2006-06-30 | 2008-07-01 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
JP2008244477A (ja) * | 2007-03-23 | 2008-10-09 | Nikon Corp | 液体回収システム、液浸露光装置、液浸露光方法、及びデバイス製造方法 |
WO2009013903A1 (ja) | 2007-07-24 | 2009-01-29 | Nikon Corporation | 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法 |
JPWO2007055373A1 (ja) * | 2005-11-14 | 2009-04-30 | 株式会社ニコン | 液体回収部材、露光装置、露光方法、及びデバイス製造方法 |
US7705968B2 (en) | 2005-03-18 | 2010-04-27 | Nikon Corporation | Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method |
JP2010171462A (ja) * | 2010-04-26 | 2010-08-05 | Nikon Corp | 露光装置及びデバイス製造方法 |
US7782442B2 (en) | 2005-12-06 | 2010-08-24 | Nikon Corporation | Exposure apparatus, exposure method, projection optical system and device producing method |
US7803516B2 (en) | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
US7875418B2 (en) | 2004-03-16 | 2011-01-25 | Carl Zeiss Smt Ag | Method for a multiple exposure, microlithography projection exposure installation and a projection system |
US7948616B2 (en) | 2007-04-12 | 2011-05-24 | Nikon Corporation | Measurement method, exposure method and device manufacturing method |
US7959988B2 (en) | 2006-11-29 | 2011-06-14 | Tokyo Electron Limited | Coating film forming apparatus and method |
JP2011166165A (ja) * | 2004-01-20 | 2011-08-25 | Carl Zeiss Smt Gmbh | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
JP2011171760A (ja) * | 2007-09-13 | 2011-09-01 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
US8023106B2 (en) | 2007-08-24 | 2011-09-20 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
US8035799B2 (en) | 2004-12-09 | 2011-10-11 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
US8040489B2 (en) | 2004-10-26 | 2011-10-18 | Nikon Corporation | Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid |
US8089608B2 (en) | 2005-04-18 | 2012-01-03 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8098362B2 (en) | 2007-05-30 | 2012-01-17 | Nikon Corporation | Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method |
US8111372B2 (en) | 2006-11-29 | 2012-02-07 | Tokyo Electron Limited | Coating film forming apparatus and coating film forming method for immersion light exposure |
JP2012089889A (ja) * | 2004-01-05 | 2012-05-10 | Nikon Corp | 露光装置、露光方法及びデバイス製造方法 |
US8179517B2 (en) | 2005-06-30 | 2012-05-15 | Nikon Corporation | Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method |
US8189168B2 (en) | 2007-05-28 | 2012-05-29 | Nikon Corporation | Exposure apparatus, device production method, cleaning apparatus, cleaning method, and exposure method |
US8194232B2 (en) | 2007-07-24 | 2012-06-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
US8208119B2 (en) | 2004-02-04 | 2012-06-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8218129B2 (en) | 2007-08-24 | 2012-07-10 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system |
US8237919B2 (en) | 2007-08-24 | 2012-08-07 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads |
US8236467B2 (en) | 2005-04-28 | 2012-08-07 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
EP2506289A2 (en) | 2005-01-31 | 2012-10-03 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
US8351018B2 (en) | 2008-05-08 | 2013-01-08 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8384875B2 (en) | 2008-09-29 | 2013-02-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8400614B2 (en) | 2005-12-28 | 2013-03-19 | Nikon Corporation | Pattern formation method and pattern formation apparatus, exposure method and exposure apparatus, and device manufacturing method |
US8411271B2 (en) | 2005-12-28 | 2013-04-02 | Nikon Corporation | Pattern forming method, pattern forming apparatus, and device manufacturing method |
US8421993B2 (en) | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
US8446579B2 (en) | 2008-05-28 | 2013-05-21 | Nikon Corporation | Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US8462317B2 (en) | 2007-10-16 | 2013-06-11 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8482716B2 (en) | 2004-06-10 | 2013-07-09 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8508713B2 (en) | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8520291B2 (en) | 2007-10-16 | 2013-08-27 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8547527B2 (en) | 2007-07-24 | 2013-10-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US8619231B2 (en) | 2009-05-21 | 2013-12-31 | Nikon Corporation | Cleaning method, exposure method, and device manufacturing method |
US8638422B2 (en) | 2005-03-18 | 2014-01-28 | Nikon Corporation | Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus |
US8675177B2 (en) | 2003-04-09 | 2014-03-18 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas |
US8675174B2 (en) | 2004-09-17 | 2014-03-18 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US8717533B2 (en) | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US8867022B2 (en) | 2007-08-24 | 2014-10-21 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method |
US8889337B2 (en) | 2006-11-21 | 2014-11-18 | Tokyo Electron Limited | Film forming method, film forming apparatus and pattern forming method |
US8902401B2 (en) | 2006-05-09 | 2014-12-02 | Carl Zeiss Smt Gmbh | Optical imaging device with thermal attenuation |
US9057877B2 (en) | 2007-10-24 | 2015-06-16 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9097981B2 (en) | 2007-10-12 | 2015-08-04 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9140993B2 (en) | 2003-10-28 | 2015-09-22 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9164209B2 (en) | 2003-11-20 | 2015-10-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction |
US9229333B2 (en) | 2007-12-28 | 2016-01-05 | Nikon Corporation | Exposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method |
US9239524B2 (en) | 2005-03-30 | 2016-01-19 | Nikon Corporation | Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region |
US9304412B2 (en) | 2007-08-24 | 2016-04-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method |
US9411247B2 (en) | 2004-06-10 | 2016-08-09 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP2017224000A (ja) * | 2004-08-19 | 2017-12-21 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
US10451973B2 (en) | 2005-05-03 | 2019-10-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10495980B2 (en) | 2005-03-04 | 2019-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10620544B2 (en) | 2010-04-22 | 2020-04-14 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101264936B1 (ko) * | 2004-06-04 | 2013-05-15 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US20070103661A1 (en) * | 2004-06-04 | 2007-05-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070222959A1 (en) * | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
KR20070115860A (ko) * | 2005-03-30 | 2007-12-06 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
US20070132976A1 (en) * | 2005-03-31 | 2007-06-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
TW200644079A (en) * | 2005-03-31 | 2006-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device production method |
WO2007043535A1 (ja) * | 2005-10-07 | 2007-04-19 | Nikon Corporation | 光学特性計測方法、露光方法及びデバイス製造方法、並びに検査装置及び計測方法 |
US7929109B2 (en) * | 2005-10-20 | 2011-04-19 | Nikon Corporation | Apparatus and method for recovering liquid droplets in immersion lithography |
US20070127002A1 (en) * | 2005-11-09 | 2007-06-07 | Nikon Corporation | Exposure apparatus and method, and device manufacturing method |
US8953148B2 (en) | 2005-12-28 | 2015-02-10 | Nikon Corporation | Exposure apparatus and making method thereof |
KR101442381B1 (ko) | 2006-01-19 | 2014-09-22 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
WO2007102484A1 (ja) | 2006-03-07 | 2007-09-13 | Nikon Corporation | デバイス製造方法、デバイス製造システム及び測定検査装置 |
US20070291261A1 (en) * | 2006-04-14 | 2007-12-20 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
CN100541713C (zh) * | 2006-07-18 | 2009-09-16 | 东京毅力科创株式会社 | 高折射率液体循环系统、图案形成装置以及图案形成方法 |
JP2008042004A (ja) * | 2006-08-08 | 2008-02-21 | Tokyo Electron Ltd | パターン形成方法およびパターン形成装置 |
JP4772620B2 (ja) * | 2006-08-11 | 2011-09-14 | 東京エレクトロン株式会社 | 液浸露光用塗布膜の処理条件決定方法および処理条件決定装置 |
US20080043211A1 (en) * | 2006-08-21 | 2008-02-21 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
JP5132920B2 (ja) * | 2006-11-22 | 2013-01-30 | 東京エレクトロン株式会社 | 塗布・現像装置および基板搬送方法、ならびにコンピュータプログラム |
JP4926678B2 (ja) * | 2006-12-04 | 2012-05-09 | 東京エレクトロン株式会社 | 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体 |
JP2008153450A (ja) * | 2006-12-18 | 2008-07-03 | Tokyo Electron Ltd | 塗布膜処理方法および塗布膜処理装置 |
JP2008153422A (ja) * | 2006-12-18 | 2008-07-03 | Tokyo Electron Ltd | 塗布・現像装置およびパターン形成方法 |
US8004651B2 (en) * | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8164736B2 (en) * | 2007-05-29 | 2012-04-24 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing device |
NL1035757A1 (nl) * | 2007-08-02 | 2009-02-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
US20090051895A1 (en) * | 2007-08-24 | 2009-02-26 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, device manufacturing method, and processing system |
US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US9013681B2 (en) * | 2007-11-06 | 2015-04-21 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
KR101470671B1 (ko) * | 2007-11-07 | 2014-12-08 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
US9256140B2 (en) | 2007-11-07 | 2016-02-09 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction |
US8665455B2 (en) * | 2007-11-08 | 2014-03-04 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US8422015B2 (en) | 2007-11-09 | 2013-04-16 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US20090138273A1 (en) * | 2007-11-23 | 2009-05-28 | International Business Machines Corporation | Systems and methods for transforming a business process into reusable services |
US8711327B2 (en) * | 2007-12-14 | 2014-04-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
NL2005951A (en) * | 2010-02-02 | 2011-08-03 | Asml Netherlands Bv | Lithographic apparatus and a device manufacturing method. |
NL2009271A (en) | 2011-09-15 | 2013-03-18 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2009472A (en) * | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
TWI840811B (zh) | 2015-02-23 | 2024-05-01 | 日商尼康股份有限公司 | 基板處理系統及基板處理方法、以及元件製造方法 |
EP3264030B1 (en) | 2015-02-23 | 2020-07-22 | Nikon Corporation | Measurement device, lithography system and exposure device, and device manufacturing method |
EP4300194A3 (en) | 2015-02-23 | 2024-04-10 | Nikon Corporation | Measurement device, lithography system and exposure apparatus, and control method, overlay measurement method and device manufacturing method |
EP3506012A4 (en) | 2016-08-24 | 2020-04-15 | Nikon Corporation | MEASURING SYSTEM, SUBSTRATE PROCESSING SYSTEM, AND DEVICE MANUFACTURING METHOD |
KR102239782B1 (ko) | 2016-09-30 | 2021-04-13 | 가부시키가이샤 니콘 | 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법 |
WO2024078802A1 (en) * | 2022-10-12 | 2024-04-18 | Asml Netherlands B.V. | Substrate support qualification |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207711A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及び露光方法、デバイス製造方法 |
JP2004259966A (ja) * | 2003-02-26 | 2004-09-16 | Nikon Corp | 露光装置及びデバイス製造方法 |
JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
Family Cites Families (156)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US6297871B1 (en) * | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
WO1998024115A1 (fr) | 1996-11-28 | 1998-06-04 | Nikon Corporation | Dispositif d'alignement et procede d'exposition |
WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
JP4117530B2 (ja) * | 2002-04-04 | 2008-07-16 | セイコーエプソン株式会社 | 液量判定装置、露光装置、および液量判定方法 |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101713932B (zh) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
KR20120127755A (ko) * | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
WO2004053955A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US6992750B2 (en) | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
KR100971440B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
US7399978B2 (en) | 2002-12-19 | 2008-07-15 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
TW200500813A (en) | 2003-02-26 | 2005-01-01 | Nikon Corp | Exposure apparatus and method, and method of producing device |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
KR101280628B1 (ko) | 2003-04-10 | 2013-07-01 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
EP3352015A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
KR101753496B1 (ko) | 2003-04-11 | 2017-07-03 | 가부시키가이샤 니콘 | 액침 리소그래피 장치 및 액침 리소그래피 장치에 사용되는 세정 방법 |
SG139735A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
SG194246A1 (en) | 2003-04-17 | 2013-11-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
TWI442694B (zh) | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261742A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007527615A (ja) | 2003-07-01 | 2007-09-27 | 株式会社ニコン | 同位体特定流体の光学素子としての使用方法 |
US7738074B2 (en) | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7145643B2 (en) | 2003-08-07 | 2006-12-05 | Asml Netherlands B.V. | Interface unit, lithographic projection apparatus comprising such an interface unit and a device manufacturing method |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
EP3223074A1 (en) | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for immersion lithography for recovering fluid |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US20070105050A1 (en) | 2003-11-05 | 2007-05-10 | Dsm Ip Assets B.V. | Method and apparatus for producing microchips |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4747263B2 (ja) | 2003-11-24 | 2011-08-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | オブジェクティブにおける光学素子のための保持装置 |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
EP1697798A2 (en) | 2003-12-15 | 2006-09-06 | Carl Zeiss SMT AG | Projection objective having a high aperture and a planar end surface |
JP2007516613A (ja) | 2003-12-15 | 2007-06-21 | カール・ツアイス・エスエムテイ・アーゲー | 少なくとも1つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ |
WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
EP2006739A3 (en) | 2004-01-14 | 2013-06-26 | Carl Zeiss SMT GmbH | Catadioptric projection objective |
KR101233879B1 (ko) | 2004-01-16 | 2013-02-15 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
DE602005019689D1 (de) | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
EP1723467A2 (en) | 2004-02-03 | 2006-11-22 | Rochester Institute of Technology | Method of photolithography using a fluid and a system thereof |
KR101377815B1 (ko) * | 2004-02-03 | 2014-03-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005081067A1 (en) | 2004-02-13 | 2005-09-01 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
JP2005242080A (ja) * | 2004-02-27 | 2005-09-08 | Victor Co Of Japan Ltd | ワイヤグリッドポラライザ |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101833247B (zh) | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | 微光刻投影曝光系统的投影物镜的光学测量的测量系统 |
EP1759248A1 (en) | 2004-06-04 | 2007-03-07 | Carl Zeiss SMT AG | Projection system with compensation of intensity variatons and compensation element therefor |
-
2004
- 2004-09-16 JP JP2005514126A patent/JP4444920B2/ja not_active Expired - Lifetime
- 2004-09-16 WO PCT/JP2004/014000 patent/WO2005029559A1/ja active Application Filing
-
2006
- 2006-03-15 US US11/374,953 patent/US7924402B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207711A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及び露光方法、デバイス製造方法 |
JP2004259966A (ja) * | 2003-02-26 | 2004-09-16 | Nikon Corp | 露光装置及びデバイス製造方法 |
JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
Cited By (206)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8675177B2 (en) | 2003-04-09 | 2014-03-18 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9164393B2 (en) | 2003-04-09 | 2015-10-20 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in four areas |
US9146474B2 (en) | 2003-04-09 | 2015-09-29 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger and different linear polarization states in an on-axis area and a plurality of off-axis areas |
US9885959B2 (en) | 2003-04-09 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator |
US9140992B2 (en) | 2003-10-28 | 2015-09-22 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9760014B2 (en) | 2003-10-28 | 2017-09-12 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9146476B2 (en) | 2003-10-28 | 2015-09-29 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9140993B2 (en) | 2003-10-28 | 2015-09-22 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9423697B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9244359B2 (en) | 2003-10-28 | 2016-01-26 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US10281632B2 (en) | 2003-11-20 | 2019-05-07 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction |
US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
US9164209B2 (en) | 2003-11-20 | 2015-10-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction |
JP2005191344A (ja) * | 2003-12-26 | 2005-07-14 | Nikon Corp | 露光装置及びデバイス製造方法 |
JP2012089889A (ja) * | 2004-01-05 | 2012-05-10 | Nikon Corp | 露光装置、露光方法及びデバイス製造方法 |
JP2011166165A (ja) * | 2004-01-20 | 2011-08-25 | Carl Zeiss Smt Gmbh | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
US10345710B2 (en) | 2004-01-20 | 2019-07-09 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus and measuring device for a projection lens |
US9436095B2 (en) | 2004-01-20 | 2016-09-06 | Carl Zeiss Smt Gmbh | Exposure apparatus and measuring device for a projection lens |
US8605252B2 (en) | 2004-02-04 | 2013-12-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US9316921B2 (en) | 2004-02-04 | 2016-04-19 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US10048602B2 (en) | 2004-02-04 | 2018-08-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8208119B2 (en) | 2004-02-04 | 2012-06-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US9140990B2 (en) | 2004-02-06 | 2015-09-22 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10241417B2 (en) | 2004-02-06 | 2019-03-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10234770B2 (en) | 2004-02-06 | 2019-03-19 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US9423694B2 (en) | 2004-02-06 | 2016-08-23 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US9429848B2 (en) | 2004-02-06 | 2016-08-30 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10007194B2 (en) | 2004-02-06 | 2018-06-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US8634060B2 (en) | 2004-03-16 | 2014-01-21 | Carl Zeiss Smt Gmbh | Method for a multiple exposure, microlithography projection exposure installation and a projection system |
US7875418B2 (en) | 2004-03-16 | 2011-01-25 | Carl Zeiss Smt Ag | Method for a multiple exposure, microlithography projection exposure installation and a projection system |
JP2005303316A (ja) * | 2004-04-14 | 2005-10-27 | Asml Netherlands Bv | リソグラフィック装置及びデバイス製造方法 |
JP4517341B2 (ja) * | 2004-06-04 | 2010-08-04 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
JP2005347617A (ja) * | 2004-06-04 | 2005-12-15 | Nikon Corp | 露光装置及びデバイス製造方法 |
US9411247B2 (en) | 2004-06-10 | 2016-08-09 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US9778580B2 (en) | 2004-06-10 | 2017-10-03 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US9134621B2 (en) | 2004-06-10 | 2015-09-15 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
JP2005353820A (ja) * | 2004-06-10 | 2005-12-22 | Nikon Corp | 露光装置及びデバイス製造方法 |
US9529273B2 (en) | 2004-06-10 | 2016-12-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8482716B2 (en) | 2004-06-10 | 2013-07-09 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8717533B2 (en) | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8704999B2 (en) | 2004-06-10 | 2014-04-22 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8508713B2 (en) | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US10203614B2 (en) | 2004-06-10 | 2019-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP2017224000A (ja) * | 2004-08-19 | 2017-12-21 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
US10331047B2 (en) | 2004-08-19 | 2019-06-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10705439B2 (en) | 2004-08-19 | 2020-07-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10599054B2 (en) | 2004-08-19 | 2020-03-24 | Asml Holding N.V. | Lithographic apparatus and device manufacturing method |
US9958785B2 (en) | 2004-09-17 | 2018-05-01 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8675174B2 (en) | 2004-09-17 | 2014-03-18 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8941808B2 (en) | 2004-10-26 | 2015-01-27 | Nikon Corporation | Immersion lithographic apparatus rinsing outer contour of substrate with immersion space |
US8040489B2 (en) | 2004-10-26 | 2011-10-18 | Nikon Corporation | Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid |
US8913224B2 (en) | 2004-12-09 | 2014-12-16 | Nixon Corporation | Exposure apparatus, exposure method, and device producing method |
US8035799B2 (en) | 2004-12-09 | 2011-10-11 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
US9746781B2 (en) | 2005-01-31 | 2017-08-29 | Nikon Corporation | Exposure apparatus and method for producing device |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
EP3079164A1 (en) | 2005-01-31 | 2016-10-12 | Nikon Corporation | Exposure apparatus and method for producing device |
EP2506289A2 (en) | 2005-01-31 | 2012-10-03 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
US10495980B2 (en) | 2005-03-04 | 2019-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10495981B2 (en) | 2005-03-04 | 2019-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7705968B2 (en) | 2005-03-18 | 2010-04-27 | Nikon Corporation | Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method |
EP2426708A1 (en) | 2005-03-18 | 2012-03-07 | Nikon Corporation | Substrate holding device |
US8638422B2 (en) | 2005-03-18 | 2014-01-28 | Nikon Corporation | Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus |
US9239524B2 (en) | 2005-03-30 | 2016-01-19 | Nikon Corporation | Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region |
US8724077B2 (en) | 2005-04-18 | 2014-05-13 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8089608B2 (en) | 2005-04-18 | 2012-01-03 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP2527921A2 (en) | 2005-04-28 | 2012-11-28 | Nikon Corporation | Exposure method and exposure apparatus |
US8236467B2 (en) | 2005-04-28 | 2012-08-07 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
US8941812B2 (en) | 2005-04-28 | 2015-01-27 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
JP4543003B2 (ja) * | 2005-05-03 | 2010-09-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及びデバイス製造方法 |
US10488759B2 (en) | 2005-05-03 | 2019-11-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1720073A1 (en) * | 2005-05-03 | 2006-11-08 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006313905A (ja) * | 2005-05-03 | 2006-11-16 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
US10451973B2 (en) | 2005-05-03 | 2019-10-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9429851B2 (en) | 2005-05-12 | 2016-08-30 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9360763B2 (en) | 2005-05-12 | 2016-06-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9891539B2 (en) | 2005-05-12 | 2018-02-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9310696B2 (en) | 2005-05-12 | 2016-04-12 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US8179517B2 (en) | 2005-06-30 | 2012-05-15 | Nikon Corporation | Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method |
JP2007035934A (ja) * | 2005-07-27 | 2007-02-08 | Nikon Corp | 露光装置及びデバイス製造方法 |
US8018571B2 (en) | 2005-08-23 | 2011-09-13 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method |
WO2007023813A1 (ja) | 2005-08-23 | 2007-03-01 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
WO2007055199A1 (ja) | 2005-11-09 | 2007-05-18 | Nikon Corporation | 露光装置及び方法、並びにデバイス製造方法 |
JPWO2007055373A1 (ja) * | 2005-11-14 | 2009-04-30 | 株式会社ニコン | 液体回収部材、露光装置、露光方法、及びデバイス製造方法 |
JP2007142013A (ja) * | 2005-11-16 | 2007-06-07 | Canon Inc | 露光装置及びデバイス製造方法 |
JP4514225B2 (ja) * | 2005-11-16 | 2010-07-28 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US7916273B2 (en) | 2005-11-16 | 2011-03-29 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
WO2007058354A1 (ja) | 2005-11-21 | 2007-05-24 | Nikon Corporation | 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置 |
US7803516B2 (en) | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
US8547520B2 (en) | 2005-12-06 | 2013-10-01 | Nikon Corporation | Exposing method, exposure apparatus, and device fabricating method |
WO2007066692A1 (ja) | 2005-12-06 | 2007-06-14 | Nikon Corporation | 露光方法、露光装置、及びデバイス製造方法 |
WO2007066679A1 (ja) | 2005-12-06 | 2007-06-14 | Nikon Corporation | 露光装置、露光方法、投影光学系及びデバイス製造方法 |
US7782442B2 (en) | 2005-12-06 | 2010-08-24 | Nikon Corporation | Exposure apparatus, exposure method, projection optical system and device producing method |
US8243254B2 (en) | 2005-12-06 | 2012-08-14 | Nikon Corporation | Exposing method, exposure apparatus, and device fabricating method |
US8411271B2 (en) | 2005-12-28 | 2013-04-02 | Nikon Corporation | Pattern forming method, pattern forming apparatus, and device manufacturing method |
US8400614B2 (en) | 2005-12-28 | 2013-03-19 | Nikon Corporation | Pattern formation method and pattern formation apparatus, exposure method and exposure apparatus, and device manufacturing method |
WO2007077925A1 (ja) | 2005-12-28 | 2007-07-12 | Nikon Corporation | パターン形成方法及びパターン形成装置、並びにデバイス製造方法 |
WO2007077875A1 (ja) | 2005-12-28 | 2007-07-12 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
US7714982B2 (en) | 2006-02-16 | 2010-05-11 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8390779B2 (en) | 2006-02-16 | 2013-03-05 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
WO2007094407A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007094431A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
US8027020B2 (en) | 2006-02-16 | 2011-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
WO2007094414A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007094470A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
US8027021B2 (en) | 2006-02-21 | 2011-09-27 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
US9690214B2 (en) | 2006-02-21 | 2017-06-27 | Nikon Corporation | Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method |
EP2813893A1 (en) | 2006-02-21 | 2014-12-17 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP3267259A1 (en) | 2006-02-21 | 2018-01-10 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US10132658B2 (en) | 2006-02-21 | 2018-11-20 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
US8054472B2 (en) | 2006-02-21 | 2011-11-08 | Nikon Corporation | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method |
EP3267258A1 (en) | 2006-02-21 | 2018-01-10 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
EP3270226A1 (en) | 2006-02-21 | 2018-01-17 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
WO2007097380A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | パターン形成装置及びパターン形成方法、移動体駆動システム及び移動体駆動方法、露光装置及び露光方法、並びにデバイス製造方法 |
WO2007097379A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | パターン形成装置、マーク検出装置、露光装置、パターン形成方法、露光方法及びデバイス製造方法 |
US9103700B2 (en) | 2006-02-21 | 2015-08-11 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
WO2007097466A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | 測定装置及び方法、処理装置及び方法、パターン形成装置及び方法、露光装置及び方法、並びにデバイス製造方法 |
US10139738B2 (en) | 2006-02-21 | 2018-11-27 | Nikon Corporation | Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method |
US8854632B2 (en) | 2006-02-21 | 2014-10-07 | Nikon Corporation | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method |
US9857697B2 (en) | 2006-02-21 | 2018-01-02 | Nikon Corporation | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method |
US10088759B2 (en) | 2006-02-21 | 2018-10-02 | Nikon Corporation | Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method |
US10409173B2 (en) | 2006-02-21 | 2019-09-10 | Nikon Corporation | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method |
EP3279739A1 (en) | 2006-02-21 | 2018-02-07 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP3115844A1 (en) | 2006-02-21 | 2017-01-11 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
US10345121B2 (en) | 2006-02-21 | 2019-07-09 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
EP3293577A1 (en) | 2006-02-21 | 2018-03-14 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
EP3327507A1 (en) | 2006-02-21 | 2018-05-30 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US9989859B2 (en) | 2006-02-21 | 2018-06-05 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
US10012913B2 (en) | 2006-02-21 | 2018-07-03 | Nikon Corporation | Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method |
US8908145B2 (en) | 2006-02-21 | 2014-12-09 | Nikon Corporation | Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method |
US9423705B2 (en) | 2006-02-21 | 2016-08-23 | Nikon Corporation | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method |
US10234773B2 (en) | 2006-02-21 | 2019-03-19 | Nikon Corporation | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method |
US10088343B2 (en) | 2006-02-21 | 2018-10-02 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
US9329060B2 (en) | 2006-02-21 | 2016-05-03 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
WO2007105645A1 (ja) | 2006-03-13 | 2007-09-20 | Nikon Corporation | 露光装置、メンテナンス方法、露光方法及びデバイス製造方法 |
US8035800B2 (en) | 2006-03-13 | 2011-10-11 | Nikon Corporation | Exposure apparatus, maintenance method, exposure method, and method for producing device |
JP2007294947A (ja) * | 2006-04-14 | 2007-11-08 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
US10802410B2 (en) | 2006-04-14 | 2020-10-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a barrier structure to handle liquid |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2011023749A (ja) * | 2006-04-14 | 2011-02-03 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
US8902401B2 (en) | 2006-05-09 | 2014-12-02 | Carl Zeiss Smt Gmbh | Optical imaging device with thermal attenuation |
US9810996B2 (en) | 2006-05-09 | 2017-11-07 | Carl Zeiss Smt Gmbh | Optical imaging device with thermal attenuation |
US8514366B2 (en) | 2006-05-18 | 2013-08-20 | Nikon Corporation | Exposure method and apparatus, maintenance method and device manufacturing method |
WO2007135990A1 (ja) | 2006-05-18 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
WO2007136052A1 (ja) | 2006-05-22 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
WO2007136089A1 (ja) | 2006-05-23 | 2007-11-29 | Nikon Corporation | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
WO2007138834A1 (ja) | 2006-05-31 | 2007-12-06 | Nikon Corporation | 露光装置及び露光方法 |
WO2008001871A1 (fr) | 2006-06-30 | 2008-01-03 | Nikon Corporation | Procédé de maintenance, procédé d'exposition et procédé de fabrication d'appareil et de dispositif |
US7394522B2 (en) | 2006-06-30 | 2008-07-01 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
US8889337B2 (en) | 2006-11-21 | 2014-11-18 | Tokyo Electron Limited | Film forming method, film forming apparatus and pattern forming method |
US7959988B2 (en) | 2006-11-29 | 2011-06-14 | Tokyo Electron Limited | Coating film forming apparatus and method |
US8111372B2 (en) | 2006-11-29 | 2012-02-07 | Tokyo Electron Limited | Coating film forming apparatus and coating film forming method for immersion light exposure |
KR101559689B1 (ko) | 2007-03-23 | 2015-10-13 | 가부시키가이샤 니콘 | 액체 회수 시스템 및 액침 노광 장치 |
JP2008244477A (ja) * | 2007-03-23 | 2008-10-09 | Nikon Corp | 液体回収システム、液浸露光装置、液浸露光方法、及びデバイス製造方法 |
KR20150048908A (ko) * | 2007-03-23 | 2015-05-07 | 가부시키가이샤 니콘 | 액체 회수 시스템 및 액침 노광 장치 |
US9013675B2 (en) | 2007-03-23 | 2015-04-21 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
KR101653953B1 (ko) | 2007-03-23 | 2016-09-05 | 가부시키가이샤 니콘 | 액체 회수 시스템 및 액침 노광 장치 |
KR101563011B1 (ko) * | 2007-03-23 | 2015-10-23 | 가부시키가이샤 니콘 | 액체 회수 시스템 및 액침 노광 장치 |
US7948616B2 (en) | 2007-04-12 | 2011-05-24 | Nikon Corporation | Measurement method, exposure method and device manufacturing method |
US8189168B2 (en) | 2007-05-28 | 2012-05-29 | Nikon Corporation | Exposure apparatus, device production method, cleaning apparatus, cleaning method, and exposure method |
US8098362B2 (en) | 2007-05-30 | 2012-01-17 | Nikon Corporation | Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method |
WO2009013903A1 (ja) | 2007-07-24 | 2009-01-29 | Nikon Corporation | 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法 |
US9612539B2 (en) | 2007-07-24 | 2017-04-04 | Nikon Corporation | Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head |
US8547527B2 (en) | 2007-07-24 | 2013-10-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method |
EP3193212A1 (en) | 2007-07-24 | 2017-07-19 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
US8582084B2 (en) | 2007-07-24 | 2013-11-12 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
US8264669B2 (en) | 2007-07-24 | 2012-09-11 | Nikon Corporation | Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head |
US8194232B2 (en) | 2007-07-24 | 2012-06-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
US8867022B2 (en) | 2007-08-24 | 2014-10-21 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method |
US8767182B2 (en) | 2007-08-24 | 2014-07-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
US8218129B2 (en) | 2007-08-24 | 2012-07-10 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system |
US8237919B2 (en) | 2007-08-24 | 2012-08-07 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads |
US9304412B2 (en) | 2007-08-24 | 2016-04-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method |
US8023106B2 (en) | 2007-08-24 | 2011-09-20 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
JP2011171760A (ja) * | 2007-09-13 | 2011-09-01 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US9057963B2 (en) | 2007-09-14 | 2015-06-16 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US9366970B2 (en) | 2007-09-14 | 2016-06-14 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9097981B2 (en) | 2007-10-12 | 2015-08-04 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US8520291B2 (en) | 2007-10-16 | 2013-08-27 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8462317B2 (en) | 2007-10-16 | 2013-06-11 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8508717B2 (en) | 2007-10-16 | 2013-08-13 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US9857599B2 (en) | 2007-10-24 | 2018-01-02 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9057877B2 (en) | 2007-10-24 | 2015-06-16 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US10310384B2 (en) | 2007-12-28 | 2019-06-04 | Nikon Corporation | Exposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method |
US9229333B2 (en) | 2007-12-28 | 2016-01-05 | Nikon Corporation | Exposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method |
US9690205B2 (en) | 2007-12-28 | 2017-06-27 | Nikon Corporation | Exposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method |
US10274831B2 (en) | 2007-12-28 | 2019-04-30 | Nikon Corporation | Exposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method |
US8421993B2 (en) | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
US8351018B2 (en) | 2008-05-08 | 2013-01-08 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
JP2014099655A (ja) * | 2008-05-08 | 2014-05-29 | Asml Netherlands Bv | 流体ハンドリング構造及び方法、並びにリソグラフィ装置 |
US8456624B2 (en) | 2008-05-28 | 2013-06-04 | Nikon Corporation | Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method |
US8446579B2 (en) | 2008-05-28 | 2013-05-21 | Nikon Corporation | Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method |
US8384875B2 (en) | 2008-09-29 | 2013-02-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8619231B2 (en) | 2009-05-21 | 2013-12-31 | Nikon Corporation | Cleaning method, exposure method, and device manufacturing method |
US10620544B2 (en) | 2010-04-22 | 2020-04-14 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
JP2010171462A (ja) * | 2010-04-26 | 2010-08-05 | Nikon Corp | 露光装置及びデバイス製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4444920B2 (ja) | 2010-03-31 |
US7924402B2 (en) | 2011-04-12 |
JPWO2005029559A1 (ja) | 2006-11-30 |
US20060231206A1 (en) | 2006-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005029559A1 (ja) | 露光装置及びデバイス製造方法 | |
JP6319410B2 (ja) | 露光装置及びデバイス製造方法 | |
JP6234982B2 (ja) | 露光装置、及びデバイス製造方法 | |
WO2004086468A1 (ja) | 露光装置、露光方法及びデバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GE GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MK MN MW MX MZ NA NI NO NZ PG PH PL PT RO RU SC SD SE SG SK SY TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SZ TZ UG ZM ZW AM AZ BY KG MD RU TJ TM AT BE BG CH CY DE DK EE ES FI FR GB GR HU IE IT MC NL PL PT RO SE SI SK TR BF CF CG CI CM GA GN GQ GW ML MR SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2005514126 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11374953 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase | ||
WWP | Wipo information: published in national office |
Ref document number: 11374953 Country of ref document: US |