TWI799605B - 研削磨石磨銳方法以及磨銳用晶圓 - Google Patents

研削磨石磨銳方法以及磨銳用晶圓 Download PDF

Info

Publication number
TWI799605B
TWI799605B TW108121290A TW108121290A TWI799605B TW I799605 B TWI799605 B TW I799605B TW 108121290 A TW108121290 A TW 108121290A TW 108121290 A TW108121290 A TW 108121290A TW I799605 B TWI799605 B TW I799605B
Authority
TW
Taiwan
Prior art keywords
sharpening
wafer
grinding stone
sharpening method
grinding
Prior art date
Application number
TW108121290A
Other languages
English (en)
Other versions
TW202000372A (zh
Inventor
廣沢俊一郎
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202000372A publication Critical patent/TW202000372A/zh
Application granted granted Critical
Publication of TWI799605B publication Critical patent/TWI799605B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
TW108121290A 2018-06-22 2019-06-19 研削磨石磨銳方法以及磨銳用晶圓 TWI799605B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018118723A JP7154690B2 (ja) 2018-06-22 2018-06-22 研削砥石の目立て方法
JP2018-118723 2018-06-22

Publications (2)

Publication Number Publication Date
TW202000372A TW202000372A (zh) 2020-01-01
TWI799605B true TWI799605B (zh) 2023-04-21

Family

ID=68968917

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108121290A TWI799605B (zh) 2018-06-22 2019-06-19 研削磨石磨銳方法以及磨銳用晶圓

Country Status (4)

Country Link
JP (1) JP7154690B2 (zh)
KR (1) KR102708811B1 (zh)
CN (1) CN110634737B (zh)
TW (1) TWI799605B (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0796460A (ja) * 1993-09-27 1995-04-11 Toyo A Tec Kk 研削盤の砥石目立て方法及びその装置
JP2005340431A (ja) * 2004-05-26 2005-12-08 Renesas Technology Corp 半導体装置の製造方法
JP2006015423A (ja) * 2004-06-30 2006-01-19 Disco Abrasive Syst Ltd ビトリファイドボンド砥石の目立て方法および目立てボード
US20060111021A1 (en) * 2004-02-05 2006-05-25 Robert Gerber Semiconductor wafer grinder
TW201600240A (zh) * 2014-04-16 2016-01-01 Disco Corp 磨削裝置
JP2017154238A (ja) * 2016-03-04 2017-09-07 株式会社ディスコ 研削装置
TW201808535A (zh) * 2016-06-28 2018-03-16 日商利德股份有限公司 刀具的修整機構及具備該修整機構之切削裝置及使用該修整機構之刀具的修整方法
JP2018065236A (ja) * 2016-10-21 2018-04-26 株式会社ディスコ 目立てボード及びその使用方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760668A (en) * 1986-07-02 1988-08-02 Alfred Schlaefli Surface grinding machine and method
JPH0929628A (ja) * 1995-07-18 1997-02-04 Amada Washino Co Ltd 研削盤の砥石形状計測方法並びに計測装置及びこの計測方法を用いた加工方法
JP4488581B2 (ja) * 2000-04-07 2010-06-23 株式会社ディスコ 研削装置
JP2002164312A (ja) 2000-11-27 2002-06-07 Sony Corp 裏面研削方法および裏面研削装置
JP4977493B2 (ja) * 2007-02-28 2012-07-18 株式会社ディスコ 研削砥石のドレッシング方法およびドレッシング工具
JP5127270B2 (ja) 2007-03-09 2013-01-23 株式会社ディスコ ドレッシング方法およびドレッサボード
JP2016047561A (ja) * 2014-08-27 2016-04-07 株式会社ディスコ 研削装置
JP6424081B2 (ja) 2014-12-12 2018-11-14 株式会社ディスコ 研削方法
JP6803187B2 (ja) * 2016-10-05 2020-12-23 株式会社ディスコ 研削砥石のドレッシング方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0796460A (ja) * 1993-09-27 1995-04-11 Toyo A Tec Kk 研削盤の砥石目立て方法及びその装置
US20060111021A1 (en) * 2004-02-05 2006-05-25 Robert Gerber Semiconductor wafer grinder
JP2005340431A (ja) * 2004-05-26 2005-12-08 Renesas Technology Corp 半導体装置の製造方法
JP2006015423A (ja) * 2004-06-30 2006-01-19 Disco Abrasive Syst Ltd ビトリファイドボンド砥石の目立て方法および目立てボード
TW201600240A (zh) * 2014-04-16 2016-01-01 Disco Corp 磨削裝置
JP2017154238A (ja) * 2016-03-04 2017-09-07 株式会社ディスコ 研削装置
TW201808535A (zh) * 2016-06-28 2018-03-16 日商利德股份有限公司 刀具的修整機構及具備該修整機構之切削裝置及使用該修整機構之刀具的修整方法
JP2018065236A (ja) * 2016-10-21 2018-04-26 株式会社ディスコ 目立てボード及びその使用方法

Also Published As

Publication number Publication date
CN110634737B (zh) 2024-03-19
JP2019217611A (ja) 2019-12-26
KR20200000338A (ko) 2020-01-02
JP7154690B2 (ja) 2022-10-18
KR102708811B1 (ko) 2024-09-23
TW202000372A (zh) 2020-01-01
CN110634737A (zh) 2019-12-31

Similar Documents

Publication Publication Date Title
DK3778030T3 (da) Automatisk kværn og kværnefremgangsmåde dertil
EP3120379A4 (en) Abrasive pad and glass substrate abrading method
IL263480B (en) The polishing pad and the polishing method using it
EP3261114A4 (en) Composition for silicon wafer polishing and polishing method
SG11202008680WA (en) Slurry, slurry set and polishing method
DK3278928T3 (da) Indretning til slibning og/eller polering af et skæreværktøj
SG11202100589TA (en) Slurry and polishing method
EP3095556A4 (en) Double-head surface-grinding apparatus and grinding method
EP3492546A4 (en) ABRASIVE GRAIN, MANUFACTURING METHOD THEREFOR, POLISHING SLURRY WITH THESE GRINDING GRAINS AND POLISHING METHOD USING THIS POLISHING SLURRY
EP3258483A4 (en) Method for polishing silicon wafer and surface treatment composition
IL249930B (en) A method for smoothing and/or polishing slabs of stone or stone-like material
EP3540761A4 (en) POLISHING COMPOSITION AND METHOD FOR POLISHING SILICON WAFER
SG10201912536RA (en) Polishing apparatus and polishing member dressing method
EP3766637C0 (en) ABRASIVE TOOL AND ASSOCIATED MANUFACTURING METHOD
EP3565862A4 (en) COMPOSITION AND PROCESS FOR POLISHING SILICON CARBIDE
SG10202008559QA (en) Wafer grinding method
EP3441185A4 (en) POLISHING PAD AND MANUFACTURING METHOD THEREOF, AND ABRASIVE MANUFACTURING METHOD
SG11201702917RA (en) Method for manufacturing magnetic-disk substrate, and grindstone for grinding
TWI799605B (zh) 研削磨石磨銳方法以及磨銳用晶圓
SG11202001700XA (en) Slurry and polishing method
EP3482873C0 (en) SPHERICAL LENS SURFACE PROCESSING METHOD USING CUP-SHAPED GRINDING WHEEL AND SPHERICAL LENS SURFACE PROCESSING APPARATUS
DK3826807T3 (da) Skære-, slibe- og poleringsskive og skæreanordning samt fremgangsmåde til bearbejdning af emner
TWI800687B (zh) 磨削輪的製造方法
DK3520899T3 (da) Anordning og fremgangsmåde til højenergi- og/eller ultrafinmaling af partikler
EP3269501A4 (en) DIAMOND SURFACE POLISHING METHOD AND DEVICE FOR IMPLEMENTING THE SAME