TWI680700B - Copper clad laminate and printed wiring board - Google Patents
Copper clad laminate and printed wiring board Download PDFInfo
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- TWI680700B TWI680700B TW105100104A TW105100104A TWI680700B TW I680700 B TWI680700 B TW I680700B TW 105100104 A TW105100104 A TW 105100104A TW 105100104 A TW105100104 A TW 105100104A TW I680700 B TWI680700 B TW I680700B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
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- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
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- Laminated Bodies (AREA)
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Abstract
提供覆銅層壓板及印刷配線板,包含聚醯亞胺絕緣層和 銅箔,a)聚醯亞胺絕緣層包含與銅箔的表面相接的黏著性聚醯亞胺層與低膨脹性聚醯亞胺層;b)黏著性聚醯亞胺層包含相對酸酐成分含50莫耳%以上的PMDA、相對二胺成分含50莫耳%以上的BAPP的聚醯亞胺;c)低膨脹性聚醯亞胺層包含相對於酸酐成分含70莫耳~100莫耳%的PMDA的聚醯亞胺;d)對銅箔的與黏著性聚醯亞胺層相接的面進行粗化處理,Rz為1.0μm以下、Ra為0.2μm以下;e)在銅箔的與黏著性聚醯亞胺層相接的面所附著的Ni量為0.01以下、Co量為0.01~0.5、Mo量為0.01~0.5、Co+Mo為0.1~0.7(單位mg/dm2)。 Provide copper-clad laminates and printed wiring boards, including polyimide insulation layer and copper foil, a) polyimide insulation layer including an adhesive polyimide layer and a low-expansion polyimide that are in contact with the surface of the copper foil Imine layer; b) the adhesive polyfluorene imide layer contains polyfluorene imide containing more than 50 mole% PMDA relative to the anhydride component and BAPP more than 50 mole% relative to the diamine component; c) low-swelling polymer The fluorene imide layer contains polyfluorene imide containing PMDA of 70 mol% to 100 mol% relative to the acid anhydride component; d) roughening the surface of the copper foil that is in contact with the adhesive polyfluorene imide layer, Rz 1.0 μm or less and Ra 0.2 μm or less; e) The amount of Ni attached to the surface of the copper foil that is in contact with the adhesive polyimide layer is 0.01 or less, the amount of Co is 0.01 to 0.5, and the amount of Mo is 0.01 to 0.5, Co + Mo is 0.1 to 0.7 (unit mg / dm 2 ).
Description
本發明提供一種可應對隨著電子設備的小型化、高性能化而帶來的高頻波化的覆銅層壓板及印刷配線板。 The present invention provides a copper-clad laminate and a printed wiring board capable of coping with high-frequency waves caused by miniaturization and high performance of electronic equipment.
近年來,隨著電子設備的小型化、輕量化、省空間化的進展,對薄且輕量、具有柔性、即使反復彎曲也具有優異的耐久性的柔性印刷配線板(Flexible Printed Circuits,FPC)的需求增大。FPC即使在受到限制的空間,也可以立體地、高密度地封裝,因此在例如HDD、DVD、手機等電子設備的可動部分的配線,或電纜、連接器等零件中擴大其用途。 In recent years, with the progress of miniaturization, weight reduction, and space saving of electronic equipment, flexible printed wiring boards (Flexible Printed Circuits (FPC)) that are thin and light, have flexibility, and have excellent durability even after repeated bending. Demand is increasing. FPC can be packaged three-dimensionally and densely even in restricted spaces. Therefore, it expands its use in the wiring of movable parts of electronic devices such as HDDs, DVDs, and mobile phones, or in cables and connectors.
除了所述高密度化以外,設備的高性能化不斷發展,因此還需要應對傳輸信號的高頻波化。在信息處理或信息通信中,為了傳輸、處理大容量的信息而進行提高傳輸頻率的配合,印刷基板材料要求降低由於絕緣層的薄化和絕緣層的低介電化所造成的傳輸損耗。在現有的使用聚醯亞胺的FPC中,介電常數或介電損耗角正切高,在高頻波區域的傳輸損耗高,因此難以適應,為了應對高頻波化,使用將以低介電常數、低介電損耗角正切為特徵的液晶聚合物作為介電體層的FPC。然而,液晶聚合物雖然介 電特性優異,但在耐熱性或與金屬箔的黏著性方面存在改善的餘地。 In addition to the above-mentioned high-density, high-performance devices have been developed, so it is necessary to cope with high-frequency waves of transmission signals. In information processing or information communication, in order to transmit and process large-capacity information and cooperate to increase the transmission frequency, the printed substrate material is required to reduce the transmission loss caused by the thinning of the insulating layer and the low dielectricity of the insulating layer. In the existing FPC using polyimide, the dielectric constant or dielectric loss tangent is high, and the transmission loss in the high-frequency wave region is high, so it is difficult to adapt. In order to cope with the high-frequency wave, it will use a low dielectric constant and low dielectric constant. FPC in which a liquid crystal polymer characterized by an electrical loss tangent is used as a dielectric layer. However, although liquid crystal polymers It has excellent electrical characteristics, but there is room for improvement in terms of heat resistance or adhesion to metal foil.
為了改善介電特性和與金屬箔的黏著性,提出了與形成導體電路的銅箔相接的聚醯亞胺層的醯亞胺基濃度得到控制的覆銅層壓板(專利文獻1)。如果根據專利文獻1,則雖然可通過銅箔的表面粗糙度Rz和與銅箔相接的面的低醯亞胺基濃度的聚醯亞胺層的組合而控制介電特性,但該控制存在極限,傳輸特性也未能充分滿足。 In order to improve the dielectric properties and adhesion to metal foil, a copper-clad laminate having a controlled concentration of the fluorene imine group in the polyfluorene layer in contact with the copper foil forming the conductor circuit has been proposed (Patent Document 1). According to Patent Document 1, although the dielectric characteristics can be controlled by a combination of the surface roughness Rz of the copper foil and a polyimide layer having a low fluorenimine concentration on the surface in contact with the copper foil, this control exists Limits and transmission characteristics are not fully met.
為了改善低粗糙度化的銅箔與絕緣層的黏著性,提出了在與絕緣層相接的銅箔的表面析出有規定金屬的銅箔(專利文獻2)。如果根據專利文獻2,則雖然可通過鎳、鋅及鈷的析出量而抑制初始黏著力與耐熱試驗後的降低,但傳輸損耗也未能充分滿足。 In order to improve the adhesion between the copper foil having a reduced roughness and the insulating layer, a copper foil having a predetermined metal deposited on the surface of the copper foil in contact with the insulating layer has been proposed (Patent Document 2). According to Patent Document 2, although the initial adhesion force and the reduction after the heat resistance test can be suppressed by the amounts of nickel, zinc, and cobalt deposited, the transmission loss is not sufficiently satisfied.
[專利文獻1]日本專利第5031639號公報 [Patent Document 1] Japanese Patent No. 5031639
[專利文獻2]日本專利第4652020號公報 [Patent Document 2] Japanese Patent No. 4652020
本發明提供可應對隨著電子設備的小型化、高性能化而帶來的高頻波化的覆銅層壓板及印刷配線板。 The present invention provides a copper-clad laminate and a printed wiring board that can cope with high-frequency waves caused by miniaturization and high performance of electronic equipment.
為了解決所述問題,本發明者等人著眼於對銅箔表面進行處理的防鏽金屬的種類與附著量,發現將具有特定的表面狀態的銅箔用作導體層,且與該銅箔組合,在絕緣層中使用具有特定介電特性的聚醯亞胺,由此獲得高頻波區域中的阻抗匹配性優異的FPC等電路基板,從而完成本發明。 In order to solve the problem, the inventors of the present invention paid attention to the type and amount of rust-preventive metal treated on the surface of the copper foil, and found that a copper foil having a specific surface state was used as a conductor layer and combined with the copper foil By using polyfluorene imide having specific dielectric characteristics in the insulating layer, a circuit board such as FPC having excellent impedance matching in a high-frequency wave region is obtained, and the present invention has been completed.
亦即,本發明的覆銅層壓板包含聚醯亞胺絕緣層、和在該聚醯亞胺絕緣層的至少其中一個面上的銅箔。本發明的覆銅層壓板的特徵在於具有下述構成a~構成e:a)所述聚醯亞胺絕緣層包含與所述銅箔的表面相接的黏著性聚醯亞胺層(i)、直接或間接層壓於所述黏著性聚醯亞胺層(i)上的低膨脹性聚醯亞胺層(ii);b)所述黏著性聚醯亞胺層(i)包含使四羧酸酐成分與二胺成分反應而所得的聚醯亞胺,相對於所述酸酐成分而言,含有50莫耳%以上的均苯四甲酸二酐(Pyromellitic dianhydride,PMDA),相對於所述二胺成分而言,含有50莫耳%以上的2,2-雙[4-(4-胺基苯氧基)苯基]丙烷(2,2-Bis[4-(4-aminophenoxy)phenyl]propane,BAPP);c)所述低膨脹性聚醯亞胺層(ii)包含使四羧酸酐成分與二胺成分反應而所得的聚醯亞胺,相對於所述酸酐成分而言,在70莫耳%~100莫耳%的範圍內含有PMDA;d)對所述銅箔中的與所述黏著性聚醯亞胺層(i)相接的面進行粗化處理,該銅箔表面的十點平均粗糙度(Rz)為1.0μm以下,算術平均高度(Ra)為0.2μm以下; e)在所述銅箔中的與所述黏著性聚醯亞胺層(i)相接的面所附著的鎳元素的量(Ni)為0.01mg/dm2以下,鈷元素的量(Co)為0.01mg/dm2~0.5mg/dm2的範圍內、鉬元素的量(Mo)為0.01mg/dm2~0.5mg/dm2的範圍內,且鈷元素及鉬元素的總量(Co+Mo)為0.1mg/dm2~0.7mg/dm2的範圍內。 That is, the copper-clad laminate of the present invention includes a polyimide insulation layer and a copper foil on at least one of the surfaces of the polyimide insulation layer. The copper-clad laminate of the present invention is characterized by having the following constitutions a to e: a) the polyfluorene imine insulating layer includes an adhesive polyfluorine imide layer (i) which is in contact with the surface of the copper foil; A low-expansion polyimide layer (ii) laminated directly or indirectly on the adhesive polyimide layer (i); b) the adhesive polyimide layer (i) comprises The polyfluorene imide obtained by reacting a carboxylic acid anhydride component with a diamine component contains 50 mol% or more of pyromellitic dianhydride (PMDA) with respect to the acid anhydride component. As for the amine component, it contains 2,2-bis [4- (4-aminophenoxy) phenyl] propane (2,2-Bis [4- (4-aminophenoxy) phenyl] propane) , BAPP); c) The low-swelling polyfluorene imide layer (ii) contains a polyfluorene imide obtained by reacting a tetracarboxylic anhydride component and a diamine component. PMDA is contained in the range of 100% to 100%; d) roughening the surface of the copper foil that is in contact with the adhesive polyimide layer (i); Point average roughness (Rz) is 1.0 μm or less, The average surgical height (Ra) is 0.2 μm or less; e) the amount (Ni) of the nickel element attached to the surface of the copper foil that is in contact with the adhesive polyimide layer (i) is 0.01 mg / dm 2 or less, the amount of cobalt (Co) is in the range of 0.01 mg / dm 2 to 0.5 mg / dm 2 , and the amount of molybdenum (Mo) is in the range of 0.01 mg / dm 2 to 0.5 mg / dm 2 In addition, the total amount of cobalt and molybdenum (Co + Mo) is within a range of 0.1 mg / dm 2 to 0.7 mg / dm 2 .
本發明的覆銅層壓板也可以是所述銅箔的粗化處理可通過該銅箔的剖面的掃描式電子顯微鏡(Scanning Electron Microscope,SEM)觀察而確認,利用所述SEM觀察而測定的粗化高度的最大值不足0.6μm。 The copper-clad laminate of the present invention may be a roughening treatment of the copper foil, which can be confirmed by scanning electron microscopy (SEM) observation of the cross section of the copper foil, and rough measurement measured by the SEM observation. The maximum chemical height is less than 0.6 μm.
本發明的覆銅層壓板也可以是所述黏著性聚醯亞胺層(i)相對於所述酸酐成分而言,在90莫耳%~96莫耳%的範圍內含有PMDA,在4莫耳%~10莫耳%的範圍內含有選自由3,3',4,4'-聯苯四羧酸二酐(3,3',4,4'-Biphenyltetracarboxylic dianhydride,BPDA)及4,4'-氧雙鄰苯二甲酸二酐(4,4'-Oxydiphthalic anhydride,ODPA)所構成的群組的一種以上的四羧酸酐。 The copper-clad laminate of the present invention may be such that the adhesive polyfluorene imide layer (i) contains PMDA in a range of 90 mol% to 96 mol% with respect to the acid anhydride component, In the range of ear% to 10 mole%, it is selected from the group consisting of 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (3,3', 4,4'-Biphenyltetracarboxylic dianhydride, BPDA) and 4,4 One or more types of tetracarboxylic anhydrides in the group consisting of '-oxybisphthalic anhydride (4,4'-Oxydiphthalic anhydride, ODPA).
本發明的覆銅層壓板也可以是所述低膨脹性聚醯亞胺層(ii)相對於所述二胺成分而言,在70莫耳%~100莫耳%的範圍內含有下述通式(1)所表示的二胺,在0莫耳%~30莫耳%的範圍內含有下述通式(2)所表示的二胺。 The copper-clad laminate according to the present invention may be such that the low-expansion polyfluorene imide layer (ii) contains, in the range of 70 mol% to 100 mol%, the following diamine components. The diamine represented by formula (1) contains a diamine represented by the following general formula (2) in a range of 0 mol% to 30 mol%.
[化1]
本發明的印刷配線板是對所述任意覆銅層壓板的銅箔進行配線電路加工而成的。 The printed wiring board of the present invention is obtained by processing a wiring circuit of a copper foil of the optional copper-clad laminate.
本發明的覆銅層壓板可通過抑制由於銅箔的趨膚效應(skin effect)所造成的電阻的增大而有效地活用聚醯亞胺絕緣層的介電特性,因此可作為需要高速信號傳輸的電子材料而適宜地使用。 The copper-clad laminate of the present invention can effectively utilize the dielectric properties of the polyimide insulation layer by suppressing the increase in resistance caused by the skin effect of the copper foil, and thus can be used as a signal requiring high-speed transmission. Suitable electronic materials.
圖1是實施例1中所使用的銅箔的剖面的SEM相片。 FIG. 1 is a SEM photograph of a cross section of a copper foil used in Example 1. FIG.
以下,關於本發明的實施方式加以說明。 Hereinafter, embodiments of the present invention will be described.
<覆銅層壓板> <Copper clad laminate>
本實施方式的覆銅層壓板是包含聚醯亞胺絕緣層、在該聚醯亞胺絕緣層的至少其中一個面上的銅箔層的覆銅層壓板,可以是僅僅在聚醯亞胺絕緣層的單面側包含銅箔的單面覆銅層壓板,也可以是在聚醯亞胺絕緣層的兩側包含銅箔的兩面覆銅層壓板。另外,為了獲得兩面覆銅層壓板,可利用如下方法而獲得:在形成單面覆銅層壓板後,使聚醯亞胺絕緣層相互相向,通過熱壓進行壓接而形成;在單面覆銅層壓板的聚醯亞胺絕緣層上壓接銅箔而形成等。 The copper-clad laminate according to this embodiment is a copper-clad laminate including a polyimide insulation layer and a copper foil layer on at least one side of the polyimide insulation layer, and may be insulated only by polyimide A single-sided copper-clad laminate including copper foil on one side of the layer may be a double-sided copper-clad laminate including copper foil on both sides of the polyimide insulation layer. In addition, in order to obtain a double-sided copper-clad laminate, it can be obtained by forming the single-sided copper-clad laminate with the polyimide insulation layers facing each other and pressing and bonding by hot pressing; A copper foil is formed by pressure-bonding a copper foil on a polyimide insulation layer.
(聚醯亞胺絕緣層) (Polyimide insulation layer)
聚醯亞胺樹脂層包含與銅箔的表面相接的黏著性聚醯亞胺層(i)、直接或間接層壓於所述黏著性聚醯亞胺層(i)上的低膨脹性聚醯亞胺層(ii)。 The polyimide resin layer includes an adhesive polyimide layer (i) in contact with the surface of the copper foil, and a low-expansion polymer laminated directly or indirectly on the adhesive polyimide layer (i).醯 imine layer (ii).
黏著性聚醯亞胺層(i):黏著性聚醯亞胺層(i)包含使 四羧酸酐成分與二胺成分反應而所得的聚醯亞胺,原料的酸酐成分至少使用均苯四甲酸二酐(PMDA),原料的二胺成分使用2,2-雙[4-(4-胺基苯氧基)苯基]丙烷(BAPP)。PMDA有助於提高聚醯亞胺的焊接耐熱性,BAPP有助於提高聚醯亞胺與銅箔的黏著性。自此種觀點考慮,相對於原料的酸酐成分而言,在50莫耳%以上、優選為90莫耳%以上、更優選為90莫耳%~100莫耳%的範圍內使用PMDA,相對於二胺成分而言,在50莫耳%以上、優選為90莫耳%以上、更優選為90莫耳%~100莫耳%的範圍內使用BAPP。而且,通過均使用50莫耳%以上、特別是90莫耳%以上的PMDA及BAPP,可兼顧聚醯亞胺的高的膜強度(特別是撕裂強度)和與銅箔的高的黏著力,其結果可改善聚醯亞胺絕緣層與銅箔的剝離強度。 Adhesive polyimide layer (i): The adhesive polyimide layer (i) contains A polyimide obtained by reacting a tetracarboxylic anhydride component with a diamine component. At least pyromellitic dianhydride (PMDA) is used as the acid anhydride component of the raw material, and 2,2-bis [4- (4- Aminophenoxy) phenyl] propane (BAPP). PMDA helps to improve the soldering heat resistance of polyimide, and BAPP helps to improve the adhesion between polyimide and copper foil. From such a viewpoint, PMDA is used in a range of 50 mol% or more, preferably 90 mol% or more, and more preferably 90 mol% to 100 mol% with respect to the acid anhydride component of the raw material. As for the diamine component, BAPP is used in a range of 50 mol% or more, preferably 90 mol% or more, and more preferably 90 mol% to 100 mol%. Furthermore, by using PMDA and BAPP of 50 mol% or more, especially 90 mol% or more, it is possible to achieve high film strength (especially tear strength) of polyimide and high adhesion to copper foil. As a result, the peel strength of the polyfluorene imide insulating layer and the copper foil can be improved.
而且,黏著性聚醯亞胺層(i)優選使用選自由3,3',4,4'-聯苯四羧酸二酐(BPDA)及4,4'-氧雙鄰苯二甲酸二酐(ODPA)所構成的群組的一種以上的四羧酸酐作為原料的酸酐成分。BPDA及ODPA具有將玻璃化溫度降低至並不對聚醯亞胺的焊接耐熱性降低造成影響的程度的效果,例如即使在與銅箔的熱壓接(層疊)中也可以確保充分的黏著力。聚醯亞胺的玻璃化溫度可以優選為280℃~320℃的範圍內。而且,BPDA及ODPA有助於使聚醯亞胺的膜強度降低,另一方面可使醯亞胺基濃度降低,因此改善介電特性,進一步有助於聚醯亞胺的極性基的減少,改善聚醯亞胺的吸濕特性,使FPC的傳輸損耗變低。自此種觀點考慮,作為原 料的酸酐成分,優選在4莫耳%~10莫耳%的範圍內使用BPDA或ODPA。在這種情況下,優選在相對於原料的酸酐成分而言為90莫耳%~96莫耳%的範圍內使用PMDA。此處,“醯亞胺基濃度”是表示聚醯亞胺中的醯亞胺基部(-(CO)2-N-)的分子量除以聚醯亞胺的結構整體的分子量而所得的值。 The adhesive polyfluorene imine layer (i) is preferably selected from the group consisting of 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 4,4'-oxybisphthalic dianhydride. (ODPA) An acid anhydride component of one or more tetracarboxylic anhydrides as a raw material. BPDA and ODPA have the effect of lowering the glass transition temperature to such an extent that it does not affect the lowering of the soldering heat resistance of polyimide. For example, sufficient adhesion can be ensured even during thermal compression bonding (lamination) with copper foil. The glass transition temperature of polyimide may be preferably in a range of 280 ° C to 320 ° C. In addition, BPDA and ODPA help to reduce the film strength of polyimide, on the other hand, it can reduce the concentration of fluorene imine, so it improves the dielectric characteristics, and further contributes to the reduction of polar groups of polyimide. Improve the moisture absorption characteristics of polyimide, and make the transmission loss of FPC lower. From such a viewpoint, it is preferable to use BPDA or ODPA in the range of 4 mol% to 10 mol% as the acid anhydride component of the raw material. In this case, it is preferable to use PMDA in the range of 90 mol% to 96 mol% with respect to the acid anhydride component of the raw material. Here, the "fluorene imino group concentration" is a value obtained by dividing the molecular weight of the fluorene imino moiety (-(CO) 2 -N-) in the polyfluorene imide by the molecular weight of the entire structure of the polyfluorene imine.
低膨脹性聚醯亞胺層(ii): Low-expansion polyimide layer (ii):
低膨脹性聚醯亞胺層(ii)包含使四羧酸酐成分與二胺成分反應而所得的聚醯亞胺,原料的酸酐成分至少使用PMDA。PMDA可使聚醯亞胺的熱膨脹係數(Coefficient of Thermal Expansion,CTE)降低。自抑制形成覆銅層壓板時的翹曲或尺寸穩定性的降低的觀點考慮,作為聚醯亞胺絕緣層,優選將CTE控制為10ppm/K~30ppm/K的範圍內,低膨脹性聚醯亞胺層(ii)適合應用為基膜層(絕緣樹脂層的主層)。構成低膨脹性聚醯亞胺層(ii)的聚醯亞胺的CTE優選為1ppm/K~25ppm/K的範圍內,更優選為10ppm/K~20ppm/K的範圍內。自此種觀點考慮,相對於原料的酸酐成分而言,在70莫耳%~100莫耳%的範圍內使用PMDA。 The low-swelling polyfluorene imide layer (ii) contains a polyfluorene imide obtained by reacting a tetracarboxylic anhydride component and a diamine component, and at least PMDA is used as the acid anhydride component of the raw material. PMDA can reduce the coefficient of thermal expansion (CTE) of polyimide. From the viewpoint of suppressing warpage or reduction in dimensional stability when forming a copper-clad laminate, as the polyimide insulation layer, it is preferable to control the CTE in a range of 10 ppm / K to 30 ppm / K. The imine layer (ii) is suitably used as a base film layer (a main layer of an insulating resin layer). The CTE of the polyfluorene imide constituting the low-swelling polyfluorene imine layer (ii) is preferably within a range of 1 ppm / K to 25 ppm / K, and more preferably within a range of 10 ppm / K to 20 ppm / K. From this viewpoint, PMDA is used in a range of 70 mol% to 100 mol% with respect to the acid anhydride component of the raw material.
而且,低膨脹性聚醯亞胺層(ii)優選使用下述通式(1)所表示的二胺及下述通式(2)所表示的二胺作為原料二胺成分。 The low-swelling polyfluorene imine layer (ii) preferably uses a diamine represented by the following general formula (1) and a diamine represented by the following general formula (2) as a raw material diamine component.
[化4]
所述通式(1)所表示的二胺是芳香族二胺,有助於低CTE化或介電特性的改善、進一步有助於低吸濕化或高耐熱化。自此種觀點考慮,可以在相對於原料的二胺成分而言,優選為70莫耳%以上、更優選為70莫耳%~100莫耳%的範圍內使用所述通式(1)所表示的二胺。 The diamine represented by the general formula (1) is an aromatic diamine, which contributes to low CTE or improvement of dielectric properties, and further contributes to low moisture absorption or high heat resistance. From such a viewpoint, the general formula (1) can be used within a range of preferably 70 mol% or more, and more preferably 70 mol% to 100 mol% with respect to the diamine component of the raw material. Represents a diamine.
所述通式(1)所表示的二胺的具體例可列舉4,4'-二胺基-2,2'-二甲基聯苯、4,4'-二胺基-3,3'-二甲基聯苯、2,3'-二甲基-4,4'-二胺基聯苯、3,3',5-三甲基-4,4'-二胺基聯苯、2,2',5,5'-四甲基-4,4'-二胺基聯苯、3,3',5,5'-四甲基-4,4'-二胺基聯苯、2,3',5,5'-四甲基-4,4'-二胺基聯苯、2,2',3,5-四甲基-4,4'-二胺基聯苯、2,2',3,3',5,5'-六甲基-4,4'-二胺基聯苯、2,2',3,3',5,5',6,6'-八甲基-4,4'-二胺基聯苯、2,5-二甲基甲基-4,4'-二胺基聯苯、2,3,5,6-四甲基-4,4'-二胺基聯苯、2,2'-二乙基-4,4'-二胺基聯苯、2,2'-二丙基-4,4'-二胺基聯苯、2,2'-雙(1-甲基乙基)-4,4'-二胺基聯苯、5,5'-二甲基-2,2'-雙(1-甲基乙基)-4,4'-二胺基聯苯、2,2'-二辛基-4,4'-二胺基聯苯、2,2'-雙(苯基甲基)-4,4'-二胺基聯苯、4,4'-二胺基-2,2'-雙(三氟甲基)聯苯、2,2'-二乙烯基-4,4'-二胺基聯苯等。 Specific examples of the diamine represented by the general formula (1) include 4,4'-diamino-2,2'-dimethylbiphenyl, 4,4'-diamino-3,3 ' -Dimethylbiphenyl, 2,3'-dimethyl-4,4'-diaminobiphenyl, 3,3 ', 5-trimethyl-4,4'-diaminobiphenyl, 2 , 2 ', 5,5'-tetramethyl-4,4'-diaminobiphenyl, 3,3', 5,5'-tetramethyl-4,4'-diaminobiphenyl, 2 , 3 ', 5,5'-tetramethyl-4,4'-diaminobiphenyl, 2,2', 3,5-tetramethyl-4,4'-diaminobiphenyl, 2, 2 ', 3,3', 5,5'-hexamethyl-4,4'-diaminobiphenyl, 2,2 ', 3,3', 5,5 ', 6,6'-octadecyl -4,4'-diaminobiphenyl, 2,5-dimethylmethyl-4,4'-diaminobiphenyl, 2,3,5,6-tetramethyl-4,4 ' -Diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 2,2'-dipropyl-4,4'-diaminobiphenyl, 2,2 '-Bis (1-methylethyl) -4,4'-diaminobiphenyl, 5,5'-dimethyl-2,2'-bis (1-methylethyl) -4,4 '-Diaminobiphenyl, 2,2'-dioctyl-4,4'-diaminobiphenyl, 2,2'-bis (phenylmethyl) -4,4'-diamine Benzene, 4,4'-diamino-2,2'-bis (trifluoromethyl) biphenyl, 2,2'-divinyl-4,4'-diaminobiphenyl and the like.
所述通式(1)所表示的二胺中,優選為在所述通式(1)中,R1、R2為碳數1~3的烷基,更優選為4,4'-二胺基-2,2'-二甲基聯苯(m-TB)、4,4'-二胺基-3,3'-二甲基聯苯。 Among the diamines represented by the general formula (1), R 1 and R 2 in the general formula (1) are preferably alkyl groups having 1 to 3 carbon atoms, and more preferably 4,4′-di Amino-2,2'-dimethylbiphenyl (m-TB), 4,4'-diamino-3,3'-dimethylbiphenyl.
而且,除了所述通式(1)所表示的二胺以外,亦可相對於原料的二胺成分而言,在0莫耳%~30莫耳%的範圍內使用所述通式(2)所表示的二胺。所述通式(2)所表示的二胺有助於聚醯亞胺的高CTE化,另一方面使醯亞胺基濃度減少,因此改善介電特性。自此種觀點考慮,相對於原料的二胺成分而言,可以在優選為1莫耳%~30莫耳%的範圍內、更優選為5莫耳%~30莫耳%的範圍內使用所述通式(2)所表示的二胺。 In addition to the diamine represented by the general formula (1), the general formula (2) may be used in a range of 0 mol% to 30 mol% with respect to the diamine component of the raw material. The indicated diamine. The diamine represented by the general formula (2) contributes to the high CTE of the polyfluorene imine, and on the other hand, reduces the concentration of the fluorene imine group, thereby improving the dielectric characteristics. From such a viewpoint, the diamine component can be used within a range of preferably 1 mol% to 30 mol%, and more preferably 5 mol% to 30 mol% relative to the diamine component of the raw material. The diamine represented by the general formula (2).
所述通式(2)所表示的二胺的具體例可列舉1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯(1,3-Bis(4-aminophenoxy)benzene,TPE-R)、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷(BAPP)等。 Specific examples of the diamine represented by the general formula (2) include 1,4-bis (4-aminophenoxy) benzene and 1,3-bis (4-aminophenoxy) benzene (1 , 3-Bis (4-aminophenoxy) benzene, TPE-R), 2,2-bis [4- (4-aminophenoxy) phenyl] propane (BAPP), and the like.
酸酐成分還可以使用不妨礙本發明的效果的程度的所述酸酐以外的芳香族四羧酸酐。 As the acid anhydride component, an aromatic tetracarboxylic anhydride other than the acid anhydride may be used to such an extent that the effect of the present invention is not inhibited.
二胺成分還可以使用不妨礙本發明的效果的程度的所述二胺以外的芳香族二胺。 As the diamine component, an aromatic diamine other than the diamine may be used to such an extent that the effect of the present invention is not inhibited.
聚醯亞胺絕緣層的厚度可以是6μm~50μm的範圍內,優選為9μm~45μm的範圍內。如果聚醯亞胺絕緣層的厚度不足6μm,則有在製造覆銅層壓板等中的搬送時起皺等不良現象的擔憂;另一方面,如果聚醯亞胺絕緣層的厚度超過50μm,則有在覆銅層壓板的製造時的尺寸穩定性或彎曲性等中產生問題的擔憂。另外,在由多層形成聚醯亞胺絕緣層的情況下,使其合計厚度成為所述範圍內即可。 The thickness of the polyfluorene imide insulating layer may be in a range of 6 μm to 50 μm, and preferably in a range of 9 μm to 45 μm. If the thickness of the polyimide insulating layer is less than 6 μm, there may be a problem such as wrinkling during transportation in the production of a copper-clad laminate, etc. On the other hand, if the thickness of the polyimide insulating layer exceeds 50 μm, There is a concern that problems may occur in dimensional stability, bendability, and the like during the production of a copper-clad laminate. In the case where the polyfluorene imide insulating layer is formed of a plurality of layers, the total thickness may be within the above range.
聚醯亞胺絕緣層在FPC等電路基板中使用時,為了在頻率為1GHz~40GHz帶中,設為與使用液晶聚合物而製作的覆銅層壓板同等水平的傳輸損耗,3GHz的介電常數優選為3.1以下,介電損耗角正切不足0.005。通過將聚醯亞胺絕緣層的介電特性控制為此種範圍內,可抑制在FPC等電路基板中使用時的高頻波信號在傳輸路徑上的傳輸損耗。 When the polyimide insulation layer is used in a circuit board such as FPC, the dielectric constant is 3 GHz in order to set the transmission loss at the same level as that of a copper-clad laminate made of a liquid crystal polymer in the frequency band of 1 GHz to 40 GHz. It is preferably 3.1 or less, and the dielectric loss tangent is less than 0.005. By controlling the dielectric properties of the polyimide insulation layer within such a range, it is possible to suppress transmission loss of a high-frequency wave signal on a transmission path when used in a circuit board such as an FPC.
另外,聚醯亞胺絕緣層為了在FPC等電路基板中使用 時,使傳輸損耗降低至液晶聚合物同等水平,10GHz的介電常數優選為3.0以下,介電損耗角正切可以是0.005以下。通過將聚醯亞胺絕緣層的介電特性控制為此種範圍內,可抑制在FPC等電路基板中使用時的高頻波信號在傳輸路徑上的傳輸損耗。 The polyimide insulation layer is used for circuit boards such as FPC. In this case, the transmission loss is reduced to the same level as the liquid crystal polymer. The dielectric constant at 10 GHz is preferably 3.0 or less, and the dielectric loss tangent may be 0.005 or less. By controlling the dielectric properties of the polyimide insulation layer within such a range, it is possible to suppress transmission loss of a high-frequency wave signal on a transmission path when used in a circuit board such as an FPC.
自聚醯亞胺絕緣層的厚度或物性的控制的容易性考慮,優選利用將聚醯胺酸溶液直接塗佈於銅箔上之後,利用熱處理進行乾燥、硬化的所謂澆鑄(塗佈)法。而且,在將聚醯亞胺絕緣層設為多層的情況下,可以在包含不同構成成分的聚醯胺酸溶液上,順次塗佈其他聚醯胺酸溶液而形成。在聚醯亞胺絕緣層包含多層的情況下,同一構成的聚醯亞胺前體樹脂還可以使用2次以上。 Considering the ease of controlling the thickness of the polyimide insulation layer or the physical properties, a so-called casting (coating) method in which a polyamidic acid solution is directly applied to a copper foil and then dried and hardened by heat treatment is preferably used. In addition, when a polyimide insulating layer is provided in multiple layers, it can be formed by sequentially coating another polyamidic acid solution on a polyamidic acid solution containing different constituent components. When the polyfluorene imide insulating layer includes a plurality of layers, the polyfluorine imide precursor resin having the same configuration may be used two or more times.
所述酸酐及二胺分別可僅僅使用其一種,亦可並用2種以上而使用。通過選定酸酐及二胺的種類、或使用2種以上的酸酐或二胺的情況下的各自的莫耳比,可控制熱膨脹性、黏著性、玻璃化溫度等。 These acid anhydrides and diamines may be used alone, or two or more of them may be used in combination. By selecting the type of the acid anhydride and the diamine, or the respective molar ratios when two or more kinds of the acid anhydride or the diamine are used, thermal expansion properties, adhesiveness, glass transition temperature, and the like can be controlled.
構成聚醯亞胺絕緣層的聚醯亞胺可通過如下方式而製造:使所述芳香族四羧酸酐及芳香族二胺在溶媒中反應,在生成前體樹脂後進行加熱閉環。例如,使酸酐成分與二胺成分基本等莫耳地溶解於有機溶媒中,在0℃~100℃的範圍內的溫度下進行30分鐘~24小時攪拌而進行聚合反應,由此獲得作為聚醯亞胺的前體的聚醯胺酸。在反應時,以所生成的前體在有機溶媒中成為5重量%~30重量%的範圍內、優選為10重量%~20重量%的範圍 內的方式溶解反應成分。聚合反應中所使用的有機溶媒例如可列舉N,N-二甲基甲醯胺、N,N-二甲基乙醯胺(N,N-Dimethylacetamide,DMAc)、N-甲基-2-吡咯烷酮、2-丁酮、二甲基亞碸、硫酸二甲酯、環己酮、二噁烷、四氫呋喃、二甘醇二甲醚、三甘醇二甲醚等。這些溶媒還可以並用2種以上而使用,還可以進一步與如二甲苯、甲苯這樣的芳香族烴並用。而且,此種有機溶媒的使用量並無特別限制,優選調整為聚合反應所得的聚醯胺酸溶液(聚醯亞胺前體溶液)的濃度成為5重量%~30重量%左右的使用量而使用。 The polyfluorene imide constituting the polyfluorene imide insulating layer can be produced by reacting the aromatic tetracarboxylic anhydride and the aromatic diamine in a solvent, and then heating and closing the ring after forming a precursor resin. For example, an acid anhydride component and a diamine component are substantially dissolved in an organic solvent, and a polymerization reaction is performed by stirring at a temperature in a range of 0 ° C to 100 ° C for 30 minutes to 24 hours, thereby obtaining a polyfluorene. Polyimide precursor of imine. During the reaction, the produced precursor is in a range of 5% to 30% by weight in the organic solvent, and preferably in a range of 10% to 20% by weight. Dissolve the reaction ingredients in a way. Examples of the organic solvent used in the polymerization include N, N-dimethylformamide, N, N-Dimethylacetamide (DMAc), and N-methyl-2-pyrrolidone. , 2-butanone, dimethylsulfine, dimethyl sulfate, cyclohexanone, dioxane, tetrahydrofuran, diglyme, triglyme, etc. These solvents may be used in combination of two or more kinds, and may also be used in combination with aromatic hydrocarbons such as xylene and toluene. In addition, the amount of such an organic solvent used is not particularly limited, and it is preferable to adjust the concentration of the polyamidic acid solution (polyimide precursor solution) obtained by the polymerization reaction to an amount of about 5% to 30% by weight. use.
所合成的前體通常有利的是作為反應溶媒溶液而使用,可視需要濃縮、稀釋或置換為其他有機溶媒。而且,前體一般情況下的溶媒可溶性優異,因此可有利地使用。使前體醯亞胺化的方法並無特別限制,例如可適宜採用熱處理,亦即在所述溶媒中,在80℃~400℃的範圍內的溫度條件下以1小時~24小時進行加熱。 The synthesized precursors are generally advantageously used as a reaction solvent solution, and can be concentrated, diluted or replaced with other organic solvents as needed. Moreover, the precursor is generally excellent in the solubility of the solvent, and thus can be used favorably. The method of imidating the precursor sulfonium is not particularly limited, and for example, heat treatment may be suitably used, that is, heating in the solvent at a temperature in a range of 80 ° C. to 400 ° C. for 1 hour to 24 hours.
聚醯亞胺絕緣層還可以視需要含有無機填料。具體而言,例如可列舉二氧化矽、氧化鋁、氧化鎂、氧化鈹、氮化硼、氮化鋁、氮化矽、氟化鋁、氟化鈣等。這些無機填料可使用一種或者混合使用兩種以上。 The polyfluorene imide insulating layer may further contain an inorganic filler as necessary. Specific examples include silicon dioxide, aluminum oxide, magnesium oxide, beryllium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, and calcium fluoride. These inorganic fillers may be used singly or in combination of two or more.
(銅箔) (Copper foil)
在本實施方式的覆銅層壓板中,銅箔與黏著性聚醯亞胺層(i)相接的面進行了粗化處理,十點平均粗糙度(Rz)為1.0μm以下、 算術平均粗糙度(Ra)為0.2μm以下。另外,銅箔的材質還可以是銅合金。 In the copper-clad laminate of the present embodiment, the surface where the copper foil and the adhesive polyimide layer (i) are in contact with each other is roughened, and the ten-point average roughness (Rz) is 1.0 μm or less, The arithmetic average roughness (Ra) is 0.2 μm or less. The material of the copper foil may be a copper alloy.
在對信號配線供給高頻波信號的狀態下,存在如下的問題:僅僅在該信號配線的表面流動電流,電流流動的有效截面積變少而造成直流電阻變大,信號衰減(趨膚效應)。通過使銅箔與聚醯亞胺絕緣層相接的面的表面粗糙度降低,可抑制該趨膚效應所造成的信號配線的電阻增大。基於此種認識,本發明者等人關於減低導體損耗而進一步進行了研究,結果可知如果銅箔的表面粗糙度降低至某種程度,則於減低導體損耗方面並不那麼表現出效果。而且,如果為了滿足電氣性能要求基準而降低表面粗糙度,則銅箔與聚醯亞胺絕緣層的黏著力(剝離強度)變弱。因此,自可滿足電氣性能要求,確保與聚醯亞胺絕緣層的黏著性的觀點考慮,銅箔的表面需要滿足所述表面粗糙度的規定,且進行粗化處理。 In a state where a high-frequency wave signal is supplied to a signal wiring, there are problems in that a current flows only on the surface of the signal wiring, the effective cross-sectional area of the current flowing decreases, the DC resistance increases, and the signal is attenuated (skin effect). By reducing the surface roughness of the surface where the copper foil and the polyimide insulation layer are in contact with each other, it is possible to suppress an increase in the resistance of the signal wiring due to the skin effect. Based on this knowledge, the inventors of the present invention conducted further studies on reducing the conductor loss, and as a result, it was found that if the surface roughness of the copper foil is reduced to a certain degree, the effect of reducing the conductor loss is not so great. In addition, if the surface roughness is reduced in order to meet the electrical performance requirement standard, the adhesion (peel strength) between the copper foil and the polyimide insulation layer becomes weak. Therefore, from the viewpoint of satisfying the electrical performance requirements and ensuring the adhesion to the polyimide insulation layer, the surface of the copper foil needs to meet the requirements for the surface roughness and be roughened.
銅箔的粗化處理例如可通過利用電鍍法,用與銅箔相同的材料(例如銅)在銅箔的表面附著具有微細凹凸的皮膜(塊狀皮膜)而形成。另外,銅箔的粗化處理可通過銅箔的剖面的掃描式電子顯微鏡(SEM)觀察而確認,更確實地反映銅箔表面的微細凹凸對由於趨膚效應而在銅箔表面流動的電流所給予的影響。自此種觀點考慮,利用SEM觀察而測定的銅箔的粗化高度的最大值優選不足0.6μm。如果銅箔的粗化高度的最大值不足0.6μm,則可同時滿足確保與聚醯亞胺絕緣層的黏著性、抑制配線的電阻 增大的處於折衷(trade off)關係的要求。 The roughening treatment of the copper foil can be formed by, for example, using a plating method to attach a film (luminous film) having fine unevenness on the surface of the copper foil with the same material (for example, copper) as the copper foil. In addition, the roughening treatment of the copper foil can be confirmed by scanning electron microscope (SEM) observation of the cross section of the copper foil, and more accurately reflects the fine unevenness on the surface of the copper foil against the current flowing on the surface of the copper foil due to the skin effect. Give impact. From such a viewpoint, the maximum value of the roughened height of the copper foil measured by SEM observation is preferably less than 0.6 μm. If the maximum value of the roughened height of the copper foil is less than 0.6 μm, it is possible to satisfy the requirements of ensuring adhesion to the polyimide insulation layer and suppressing wiring resistance. Increased demand for trade off relationships.
本實施方式的覆銅層壓板對與黏著性聚醯亞胺層(i)相接的銅箔的表面進行至少析出鈷及鉬的金屬析出處理。通過此種金屬析出處理,以銅箔的表面的鎳元素的量(Ni)為0.01mg/dm2以下,鈷元素的量(Co)為0.01mg/dm2~0.5mg/dm2的範圍內、鉬元素的量(Mo)為0.01mg/dm2~0.5mg/dm2的範圍內,且鈷元素及鉬元素的總量(Co+Mo)成為0.1mg/dm2~0.7mg/dm2的範圍內的方式進行控制。 The copper-clad laminate according to the present embodiment performs a metal precipitation treatment to deposit at least cobalt and molybdenum on the surface of the copper foil that is in contact with the adhesive polyimide layer (i). With this metal precipitation treatment, the amount of nickel (Ni) on the surface of the copper foil is 0.01 mg / dm 2 or less, and the amount of cobalt (Co) is within a range of 0.01 mg / dm 2 to 0.5 mg / dm 2 The amount of molybdenum (Mo) is in the range of 0.01 mg / dm 2 to 0.5 mg / dm 2 , and the total amount of cobalt and molybdenum (Co + Mo) is 0.1 mg / dm 2 to 0.7 mg / dm 2 Control within the range.
鎳相對於銅而言為完全固溶體(complete solid solution),可作出合金狀態,或鎳相對於銅而言容易擴散,容易製成合金狀態。此種狀態與銅單質相比而言電阻大,換而言之導電率變小。由於此種現象,如果銅箔表面中的鎳元素的附著量多,則產生與鎳合金化的銅的電阻增大。其結果,由於趨膚效應的信號配線的電阻增大而造成信號傳輸時的損耗變大。自此種觀點考慮,在本實施方式的覆銅層壓板中,將銅箔與黏著性聚醯亞胺層(i)相接的面所附著的鎳元素的量抑制為0.01mg/dm2以下。 Nickel is a complete solid solution with respect to copper, and can be made into an alloy state, or nickel easily diffuses with respect to copper, and is easily made into an alloy state. In this state, the electrical resistance is larger than that of the copper simple substance, in other words, the electrical conductivity is reduced. Due to this phenomenon, if the amount of the nickel element adhered on the surface of the copper foil is large, the resistance of copper alloyed with nickel increases. As a result, the resistance of the signal wiring due to the skin effect increases, and the loss during signal transmission increases. From such a viewpoint, in the copper-clad laminate of the present embodiment, the amount of the nickel element attached to the surface where the copper foil and the adhesive polyimide layer (i) are in contact is suppressed to 0.01 mg / dm 2 or less. .
而且,關於導體損耗的減低,本發明者等人發現除了銅箔的表面粗糙度以外,對銅箔的表面進行金屬析出處理的金屬的附著量對導體損耗有影響,如果該金屬的附著量多,則導體損耗難以減低。另一方面,可確認進行了金屬析出處理的金屬的附著量越變少,則樹脂與銅箔之間的黏著強度及其長期可靠性或耐化學品性越降低。自此種觀點考慮,在本實施方式的覆銅層壓板中, 難以作出與銅的合金狀態,通過在銅箔的表面存在一定量的作為與鎳相比而言難以產生電阻增大的金屬的鈷及鉬,可抑制導體損耗,且確保樹脂與銅箔之間的黏著強度、其長期可靠性、及耐化學品性。因此,本實施方式中所使用的銅箔的與黏著性聚醯亞胺層(i)相接的面所附著的鈷元素的量(Co)為0.01mg/dm2~0.5mg/dm2的範圍內、鉬元素的量(Mo)為0.01mg/dm2~0.5mg/dm2的範圍內。而且,通過使鈷元素及鉬元素的總量(Co+Mo)為0.1mg/dm2~0.7mg/dm2的範圍內,可在覆銅層壓板的配線加工時,抑制配線間的聚醯亞胺部分的蝕刻殘渣,可抑制由於蝕刻而造成的對藥液的耐受性降低,及抑制銅箔與聚醯亞胺之間的黏著強度及其長期可靠性的降低。 Further, regarding the reduction of conductor loss, the inventors have found that in addition to the surface roughness of the copper foil, the amount of metal attached to the surface of the copper foil by metal precipitation treatment affects the conductor loss. If the amount of metal attached is large , It is difficult to reduce the conductor loss. On the other hand, it was confirmed that the smaller the adhesion amount of the metal subjected to the metal precipitation treatment, the lower the adhesion strength between the resin and the copper foil and its long-term reliability or chemical resistance. From such a viewpoint, in the copper-clad laminate of the present embodiment, it is difficult to make an alloy with copper, and there is a certain amount of metal on the surface of the copper foil that is a metal that is less likely to generate increased resistance than nickel. Cobalt and molybdenum can suppress conductor loss, and ensure the adhesion strength between resin and copper foil, its long-term reliability, and chemical resistance. Therefore, the amount of cobalt element (Co) attached to the surface of the copper foil used in the present embodiment in contact with the adhesive polyimide layer (i) is 0.01 mg / dm 2 to 0.5 mg / dm 2 Within the range, the amount (Mo) of the molybdenum element is in the range of 0.01 mg / dm 2 to 0.5 mg / dm 2 . In addition, by setting the total amount of cobalt and molybdenum elements (Co + Mo) to within a range of 0.1 mg / dm 2 to 0.7 mg / dm 2 , it is possible to suppress the buildup of wiring between wirings during wiring processing of a copper-clad laminate. The etching residue of the imine part can suppress the reduction of the resistance to the chemical solution caused by the etching, and the reduction of the adhesion strength between the copper foil and the polyimide and the reduction of its long-term reliability.
關於本實施方式的覆銅層壓板中所使用的銅箔的金屬析出處理,如果是可在銅箔的表面以規定量析出所述金屬的方法,則並無特別限制。例如,作為金屬析出處理的一例,可列舉使用所述金屬的防鏽處理等,具體而言可列舉使用含有規定量的所述金屬的浴而進行鍍敷處理,在銅箔的表面析出所述金屬的方法等。 The metal precipitation treatment of the copper foil used in the copper-clad laminate according to this embodiment is not particularly limited as long as it can deposit the metal in a predetermined amount on the surface of the copper foil. For example, as an example of the metal precipitation treatment, a rust prevention treatment using the metal may be mentioned, and specifically, a plating treatment is performed using a bath containing a predetermined amount of the metal, and the surface is deposited on a copper foil. Metal methods, etc.
而且,本實施方式的覆銅層壓板中所使用的銅箔,除了所述金屬析出處理以外,還可以為了提高黏著力而對銅箔的表面實施例如利用壁板、鋁醇化物、鋁螯合物、矽烷偶聯劑等的表面處理。 In addition, the copper foil used in the copper-clad laminate according to the present embodiment may be subjected to, for example, a siding, an aluminum alcoholate, or an aluminum chelate on the surface of the copper foil in order to improve the adhesion in addition to the metal precipitation treatment. Surface treatment of chemicals, silane coupling agents, etc.
在本實施方式的覆銅層壓板中,銅箔可使用市售的銅箔。其具體例可列舉福田金屬箔粉工業公司製造的 CF-T49A-DS-HD(商品名)等。 In the copper-clad laminate according to this embodiment, a commercially available copper foil can be used as the copper foil. Specific examples thereof include those manufactured by Fukuda Metal Foil Industry Co., Ltd. CF-T49A-DS-HD (trade name) and the like.
在本實施方式的覆銅層壓板中,例如在FPC的製造中使用的情況下的銅箔的優選厚度為3μm~50μm的範圍內,更優選為5μm~30μm的範圍內,但為了使電路圖案的線寬細線化,銅箔的厚度優選為5μm~20μm的範圍內。 In the copper-clad laminate of the present embodiment, for example, the thickness of the copper foil when used in the production of FPC is preferably in a range of 3 μm to 50 μm, and more preferably in a range of 5 μm to 30 μm. The line width is reduced, and the thickness of the copper foil is preferably within a range of 5 μm to 20 μm.
<印刷配線板> <Printed wiring board>
本實施方式的印刷配線板可通過利用常用方法將本實施方式的覆銅層壓板的銅箔加工為圖案狀而形成配線層,由此進行作為本發明的一實施方式的印刷配線板的製造。 The printed wiring board of the present embodiment can be manufactured by processing a copper foil of the copper-clad laminate of the present embodiment into a pattern by using a common method to form a wiring layer, thereby manufacturing a printed wiring board as an embodiment of the present invention.
以下,代表性地列舉澆鑄法的情況的例子,關於本實施方式的印刷配線板的製造方法而加以具體說明。 Hereinafter, an example of the case of a casting method is given as a representative, and the manufacturing method of the printed wiring board of this embodiment is demonstrated concretely.
首先,覆銅層壓板的製造方法可包含以下的步驟(1)~步驟(3)。 First, the method for manufacturing a copper-clad laminate may include the following steps (1) to (3).
步驟(1): step 1):
步驟(1)是獲得作為本發明的聚醯亞胺的前體的聚醯胺酸的樹脂溶液的步驟。 Step (1) is a step of obtaining a resin solution of polyamidic acid which is a precursor of the polyamidoimine of the present invention.
步驟(2): Step (2):
步驟(2)是在銅箔上塗佈聚醯胺酸的樹脂溶液,形成塗佈膜的步驟。銅箔可以切片狀、卷狀的銅箔、或環帶狀等形狀而使用。為了獲得生產性,有效率的方法是設為卷狀或環帶狀的形態,設為可連續生產的形式。另外,自更大地表現出印刷配線板中的配線圖案精度的改善效果的觀點考慮,銅箔優選形成為長條的卷狀銅 箔。 Step (2) is a step of applying a polyamic acid resin solution on a copper foil to form a coating film. The copper foil can be used in the shape of a slice, a rolled copper foil, or an endless belt. In order to obtain productivity, it is effective to use a roll-shaped or endless belt-like shape and a continuous production form. In addition, from the viewpoint that the improvement effect of the accuracy of the wiring pattern in the printed wiring board is more exhibited, the copper foil is preferably formed into a long rolled copper. Foil.
形成塗佈膜的方法可通過將聚醯胺酸的樹脂溶液直接塗佈在銅箔上之後進行乾燥而形成。塗佈的方法並無特別限制,例如可利用缺角輪(comma)、模具、刀、模唇等的塗佈機進行塗佈。 A method for forming a coating film can be formed by directly coating a resin solution of polyamic acid on a copper foil and then drying it. The coating method is not particularly limited, and for example, coating can be performed using a coater such as a comma, a mold, a knife, a die lip, or the like.
聚醯亞胺絕緣層可以是單層,也可以包含多層。在使聚醯亞胺絕緣層為多層的情況下,可在包含不同構成成分的前體層上順次塗佈其他前體而形成。在前體層包含3層以上的情況下,也可以使用2次以上同一構成的前體。層結構簡單的2層或單層可在工業上有利地獲得,因此較佳。而且,前體層的厚度(乾燥後)例如可以是3μm~100μm的範圍內,優選為3μm~50μm的範圍內。 The polyimide insulating layer may be a single layer or may include a plurality of layers. In the case where the polyfluorene imide insulating layer is multilayered, it can be formed by sequentially coating other precursors on a precursor layer containing different constituent components. When the precursor layer includes three or more layers, a precursor having the same structure two or more times may be used. A simple two-layer structure or a single-layer structure is industrially advantageous and is therefore preferred. The thickness of the precursor layer (after drying) may be, for example, in a range of 3 μm to 100 μm, and preferably in a range of 3 μm to 50 μm.
在聚醯亞胺絕緣層為多層的情況下,優選以與銅箔相接的聚醯亞胺絕緣層成為熱塑性聚醯亞胺絕緣層的方式形成前體層。通過使用熱塑性聚醯亞胺,可使與銅箔的密接性提高。此種熱塑性聚醯亞胺優選玻璃化溫度(Tg)為360℃以下,更優選為200℃~320℃。 When the polyimide insulation layer is a multilayer, it is preferable to form the precursor layer so that the polyimide insulation layer in contact with the copper foil becomes a thermoplastic polyimide insulation layer. By using a thermoplastic polyimide, the adhesiveness with copper foil can be improved. The thermoplastic polyfluorene imide preferably has a glass transition temperature (Tg) of 360 ° C or lower, and more preferably 200 ° C to 320 ° C.
而且,還可以在將單層或多層的前體層暫時醯亞胺化而製成單層或多層的聚醯亞胺絕緣層後,進一步在其上形成前體層。 In addition, a single-layer or multi-layer precursor layer may be temporarily imidized to form a single-layer or multi-layer polyimide insulation layer, and then a precursor layer may be further formed thereon.
步驟(3): Step (3):
步驟(3)是對塗佈膜進行熱處理而醯亞胺化,形成聚醯亞胺絕緣層的步驟。醯亞胺化的方法並無特別限制,例如可適宜地採用在80℃~400℃的範圍內的溫度條件下,進行1分鐘~60分鐘的範圍 內的時間的加熱的熱處理。為了抑制金屬層的氧化,優選在低氧環境下的熱處理,具體而言,優選在氮或稀有氣體等惰性氣體的環境下、氫等還原氣體的環境下、或真空中進行。通過熱處理,塗佈膜中的聚醯胺酸醯亞胺化,形成聚醯亞胺。 Step (3) is a step in which the coating film is heat-treated and then imidized to form a polyimide insulating layer. The method of the imidization is not particularly limited, and for example, a temperature range of 80 ° C. to 400 ° C. may be suitably used, and a range of 1 minute to 60 minutes may be suitably used. Heat treatment within time. In order to suppress the oxidation of the metal layer, heat treatment in a low-oxygen environment is preferable, and specifically, it is preferably performed in an environment of an inert gas such as nitrogen or a rare gas, in an environment of a reducing gas such as hydrogen, or in a vacuum. Through heat treatment, the polyfluorene phosphonium imide in the coating film is imidized to form a polyfluorene imine.
如上所述地進行,可製造包含聚醯亞胺絕緣層(單層或多層)與銅箔的覆銅層壓板。 As described above, a copper-clad laminate including a polyimide insulating layer (single layer or multiple layers) and a copper foil can be manufactured.
而且,電路基板的製造方法除了所述(1)~(3)的步驟以外,還可以進一步包含以下的步驟(4)。 In addition, the method for manufacturing a circuit board may further include the following step (4) in addition to the steps (1) to (3).
步驟(4): Step (4):
步驟(4)是對覆銅層壓板的銅箔進行圖案化而形成配線層的步驟。在本步驟中,通過將銅箔蝕刻為規定形狀而形成圖案,加工為配線層,由此獲得印刷配線板。蝕刻例如可通過利用光刻技術等的任意方法而進行。 Step (4) is a step of patterning the copper foil of the copper-clad laminate to form a wiring layer. In this step, a copper foil is etched into a predetermined shape to form a pattern and processed into a wiring layer, thereby obtaining a printed wiring board. The etching can be performed by, for example, an arbitrary method using a photolithography technique or the like.
另外,在以上的說明中,僅僅說明了印刷配線板的製造方法的特徵性步驟。亦即,在製造印刷配線板時,可以依照常用方法進行通常所進行的所述以外的步驟,例如在前步驟的通孔加工,或後步驟的端子鍍敷、外形加工等步驟。 In the above description, only the characteristic steps of the method for manufacturing a printed wiring board have been described. That is, when manufacturing a printed wiring board, steps other than those usually performed, such as through-hole processing in the previous step, or terminal plating and external shape processing in the later step, may be performed according to a common method.
如上所述,通過使用本實施方式的聚醯亞胺絕緣層及銅箔,可形成阻抗匹配性優異的覆銅層壓板。而且,通過使用本實施方式的聚醯亞胺絕緣層及銅箔,可在以FPC為代表的電路基板中,改善電信號的傳輸特性,使可靠性提高。 As described above, by using the polyfluorene imide insulating layer and the copper foil of the present embodiment, a copper-clad laminate having excellent impedance matching can be formed. In addition, by using the polyfluorene imide insulating layer and the copper foil of the present embodiment, the circuit board typified by FPC can improve the electrical signal transmission characteristics and reliability.
以下表示實施例,對本發明的特徵加以更具體的說明。但本發明的範圍並不限定於實施例。另外,在以下的實施例中,如果沒有特別的說明,則各種測定、評價如下所述地進行。 Examples are given below to describe the features of the present invention in more detail. However, the scope of the present invention is not limited to the examples. In the following examples, unless otherwise specified, various measurements and evaluations were performed as described below.
[撕裂傳播阻力的測定] [Determination of tear propagation resistance]
撕裂傳播阻力是準備63.5mm×50mm的試片,在試片上切入長12.7mm的切口,使用東洋精機製造的輕負載撕裂試驗機而測定。 The tear propagation resistance was measured by preparing a 63.5 mm × 50 mm test piece, cutting a 12.7 mm incision into the test piece, and using a light load tear tester manufactured by Toyo Seiki.
[玻璃化溫度(Tg)的測定] [Measurement of glass transition temperature (Tg)]
玻璃化溫度是使用黏彈性測定裝置(DMA:TA儀器(TA Instruments)公司製造、商品名;RSA3),將5mm×20mm的尺寸的聚醯亞胺膜以升溫速度4℃/min自30℃升溫至400℃,在1Hz的頻率下進行,將彈性模數變化成為最大(tanδ變化率最大)的溫度作為玻璃化溫度而進行評價。 The glass transition temperature was increased from 30 ° C. at a temperature rise rate of 4 ° C./min using a polyimide film having a size of 5 mm × 20 mm using a viscoelasticity measuring device (DMA: manufactured by TA Instruments, trade name; RSA3). The temperature was measured at 400 ° C. at a frequency of 1 Hz, and the temperature at which the change in the elastic modulus reached the maximum (the maximum tan δ change rate) was evaluated as the glass transition temperature.
[剝離強度及長期可靠性的測定] [Measurement of peel strength and long-term reliability]
剝離強度是使用騰喜龍測試儀(TENSILON TESTER)(東洋精機制作所公司製造、商品名;斯特羅格拉夫(Strograph)VE-1D),利用雙面膠帶將導體層側的金屬加工為寬1mm的配線的基材(包含金屬/樹脂層的層壓體)的樹脂層側固定在SUS板上,求出將基材在180°方向上以50mm/min的速度自樹脂層剝離金屬配線時的力。 The peel strength was measured by using a TENSILON TESTER (manufactured by Toyo Seiki Seisakusho, Ltd .; trade name; Strograph VE-1D) with a double-sided tape to process the metal on the conductor layer side to a width of 1 mm. The resin layer side of the base material (including the metal / resin layer laminate) of the wiring is fixed to the SUS board, and the metal wiring is peeled from the resin layer at a speed of 50 mm / min in the 180 ° direction. force.
長期可靠性是將所述配線加工基材在150℃的大氣環境下進行1000小時的熱處理後所求出的剝離時的力與熱處理前的力的百分率作為保持率。 The long-term reliability is a percentage of the force at the time of peeling and the force before the heat treatment obtained after the wiring processing substrate is subjected to a heat treatment in an atmospheric environment at 150 ° C. for 1000 hours as the retention rate.
合格與否的判定是將剝離強度為1.0kN/m以上評價為“合格”,將不足1.0kN/m評價為“不合格”,關於長期可靠性,將剝離強度的保持率為70%以上評價為“優”,將60%以上評價為“良”,將50%以上評價為“及格”,將不足50%評價為“不及格”。 The pass / fail judgment is evaluated as "Pass" with a peel strength of 1.0 kN / m or more, and "Fail" with less than 1.0 kN / m. As for long-term reliability, the retention rate of the peel strength is 70% or more. As "excellent", more than 60% were evaluated as "good", more than 50% were evaluated as "passing", and less than 50% were evaluated as "passing".
[耐化學品性的評價] [Evaluation of chemical resistance]
耐化學品性的評價是將導體層側的金屬加工為寬1mm的配線的基材(包含金屬/樹脂層的層壓體)在濃度調整為20wt%的鹽酸水溶液中、50℃下浸漬1小時後剝離配線,觀察配線或剝離了配線的樹脂層側,評價在金屬/樹脂層之間滲入的鹽酸水溶液的滲入寬度。 The evaluation of chemical resistance was performed by immersing the metal on the conductor layer side into a 1 mm wide wiring substrate (a laminate including a metal / resin layer) in a 20% by weight hydrochloric acid aqueous solution at 50 ° C for 1 hour. After the wiring was peeled off, the wiring or the resin layer side of the wiring was peeled off, and the penetration width of the aqueous hydrochloric acid solution that penetrated between the metal / resin layers was evaluated.
耐化學品性將並無滲入評價為“優”,將滲入寬度不足20μm評價為“良”,將滲入寬度不足30μm評價為“及格”,將滲入寬度為30μm以上評價為“不及格”。 Chemical resistance was evaluated as "excellent" with no infiltration, "good" with an infiltration width of less than 20 µm, "passing" with an infiltration width of less than 30 µm, and "passing" with an infiltration width of 30 µm or more.
[介電常數及介電損耗角正切的測定] [Determination of dielectric constant and dielectric loss tangent]
介電常數及介電損耗角正切是使用空腔共振器攝動法介電常數評價裝置(安捷倫(Agilent)公司製造、商品名:矢量網絡分析儀(vector network analyzer)E8363B),測定規定頻率下的樹脂片材(硬化後的樹脂片材)的介電常數及介電損耗角正切。另外,測定中所使用的樹脂片材在溫度為24℃~26℃、濕度為45%~55%的條件下放置24小時。 The dielectric constant and the dielectric loss tangent are measured using a cavity resonator perturbation dielectric constant evaluation device (manufactured by Agilent, trade name: vector network analyzer E8363B), and measured at a predetermined frequency. The dielectric constant and dielectric loss tangent of the resin sheet (resin sheet after hardening). In addition, the resin sheet used in the measurement was left for 24 hours under conditions of a temperature of 24 ° C to 26 ° C and a humidity of 45% to 55%.
[銅箔的表面粗糙度的測定] [Measurement of surface roughness of copper foil]
1)算術平均高度(Ra)的測定 1) Determination of arithmetic mean height (Ra)
使用觸針式表面粗糙度儀(小阪研究所股份有限公司製造、商品名:薩夫科達(Surfcorder)ET-3000),在壓力為100μN、速度為20μm、範圍為800μm的測定條件下求出。另外,表面粗糙度的計算是通過依據JIS-B0601:1994的方法而算出。 A stylus-type surface roughness meter (manufactured by Kosaka Research Institute Co., Ltd., trade name: Surfcorder ET-3000) was used to determine the measurement conditions under a pressure of 100 μN, a speed of 20 μm, and a range of 800 μm. The surface roughness is calculated by a method according to JIS-B0601: 1994.
2)十點平均粗糙度(Rz)的測定 2) Measurement of ten-point average roughness (Rz)
使用觸針式表面粗糙度儀(小阪研究所股份有限公司製造、商品名:薩夫科達(Surfcorder)ET-3000),在壓力為100μN、速度為20μm、範圍為800μm的測定條件下求出。另外,表面粗糙度的計算是通過依據JIS-B0601:1994的方法而算出。 A stylus-type surface roughness meter (manufactured by Kosaka Research Institute Co., Ltd., trade name: Surfcorder ET-3000) was used to determine the measurement conditions under a pressure of 100 μN, a speed of 20 μm, and a range of 800 μm. The surface roughness is calculated by a method according to JIS-B0601: 1994.
[銅箔的粗化高度的測定] [Measurement of Roughening Height of Copper Foil]
通過利用剖面試樣製作裝置(日本電子公司製造、商品名:SM-09010截面拋光機(cross section polisher))的離子照射而進行對象銅箔的剖面形成加工,以5200倍對所露出的銅箔剖面進行SEM觀察,由此獲得銅箔剖面的圖像。使用所得的圖像,基於圖像中所記的標度而算出粗化高度。 The cross-section forming process of the target copper foil was performed by ion irradiation using a cross-section sample preparation device (manufactured by Japan Electronics Corporation, trade name: SM-09010 cross section polisher), and the exposed copper foil was subjected to 5200 times The cross section was observed by SEM, and an image of the cross section of the copper foil was obtained. Using the obtained image, a roughened height was calculated based on the scale recorded in the image.
[進行了金屬析出處理的銅箔表面的金屬元素的測定] [Measurement of metal elements on the surface of copper foil subjected to metal precipitation treatment]
對銅箔的分析面背面進行遮蔽,且用1N-硝酸溶解分析面,定容為100mL後,使用珀金埃爾默(perkinelmer)公司製造的電感耦合等離子體原子發射光譜裝置(Inductively Coupled Plasma-Atomic Emission Spectrometry,ICP-AES)奧體瑪(Optima)4300進行測定。 The analytical surface of the copper foil was masked, and the analytical surface was dissolved with 1N-nitric acid to a volume of 100 mL. Then, an inductively coupled plasma atomic emission spectrometer (Inductively Coupled Plasma-) manufactured by Perkinelmer was used. Atomic Emission Spectrometry (ICP-AES) Optima 4300 was used for measurement.
[傳輸特性的評價] [Evaluation of transmission characteristics]
使用對覆銅層壓板進行電路加工,對將特性阻抗設為50Ω的微波傳輸帶線路進行了電路加工的評價樣品,評價進行了電路加工之側(傳輸線路側)的傳輸特性。利用以短路-開路-匹配-直通(SHORT-OPEN-LOOD-Thru,SOLT)法進行了校正的矢量網絡分析儀,在規定的頻率區域測定S參數,由此以S21(插入損耗)進行評價。 A circuit-processed evaluation sample of a microwave transmission line having a characteristic impedance of 50 Ω was used to perform circuit processing on a copper-clad laminate, and the transmission characteristics of the circuit-processed side (transmission line side) were evaluated. A vector network analyzer corrected by the SHORT-OPEN-LOOD-Thru (SOLT) method was used to measure the S-parameters in a predetermined frequency region, and the evaluation was performed with S21 (insertion loss).
傳輸損耗的評價在頻率為5GHz中,將不足2.7dB/10cm評價為“優”,將2.7dB/10cm以上且不足3.0dB/10cm評價為“良”,將3.0dB/10cm以上且不足3.3dB/10cm評價為“及格”,將3.3dB/10cm以上評價為“不及格”。而且,在頻率為10GHz中,將不足4.1dB/10cm評價為“優”,將4.1dB/10cm以上且不足4.6dB/10cm評價為“良”,將4.6dB/10cm以上且不足5.1dB/10cm評價為“及格”,將5.1dB/10cm以上評價為“不及格”。 The transmission loss was evaluated as "excellent" at less than 2.7dB / 10cm at a frequency of 5GHz, and "good" was evaluated at 2.7dB / 10cm or more and less than 3.0dB / 10cm, and 3.0dB / 10cm or more and less than 3.3dB. A / 10cm was evaluated as a "passing", and 3.3dB / 10cm or more was evaluated as a "passing". Moreover, at a frequency of 10 GHz, less than 4.1 dB / 10 cm is evaluated as "excellent", 4.1 dB / 10 cm or more and less than 4.6 dB / 10 cm is evaluated as "good", and 4.6 dB / 10 cm or more is less than 5.1 dB / 10 cm. The evaluation was "passed", and 5.1dB / 10cm or more was evaluated as "passed".
合成例中所使用的略號表示以下的化合物。 The abbreviations used in the synthesis examples indicate the following compounds.
m-TB:2,2'-二甲基-4,4'-二胺基聯苯 m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl
TPE-R:1,3-雙(4-胺基苯氧基)苯 TPE-R: 1,3-bis (4-aminophenoxy) benzene
BAPP:2,2-雙[4-(4-胺基苯氧基)苯基]丙烷 BAPP: 2,2-bis [4- (4-aminophenoxy) phenyl] propane
PMDA:均苯四甲酸二酐 PMDA: pyromellitic dianhydride
BPDA:3,3',4,4'-聯苯四羧酸二酐 BPDA: 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride
DMAc:N,N-二甲基乙醯胺 DMAc: N, N-dimethylacetamide
(合成例1) (Synthesis example 1)
在反應容器中加入聚合後的固體成分濃度成為15wt%的量的 DMAc而進行攪拌,以莫耳比率(m-TB:TPE-R)成為80:20的方式投入m-TB及TPE-R。進行充分攪拌直至所投入的二胺完全溶解,然後以酸酐:二胺的莫耳比率成為0.985:1.000的方式加入PMDA。其後,在室溫下繼續攪拌3小時,獲得黏度為25,000cP的聚醯胺酸溶液A。 Add the amount of solid content after polymerization to 15wt% in the reaction vessel. DMAc was stirred, and m-TB and TPE-R were introduced so that the molar ratio (m-TB: TPE-R) became 80:20. After sufficient stirring was performed until the charged diamine was completely dissolved, PMDA was added so that the molar ratio of the acid anhydride: diamine became 0.985: 1.000. Thereafter, stirring was continued at room temperature for 3 hours to obtain a polyamidic acid solution A having a viscosity of 25,000 cP.
(合成例2) (Synthesis example 2)
在反應容器中加入聚合後的固體成分濃度成為12wt%的量的DMAc而進行攪拌,投入BAPP。進行充分攪拌直至所投入的二胺完全溶解,然後以酸酐:二胺的莫耳比率成為0.990:1.000的方式加入PMDA。其後,在室溫下繼續攪拌3小時,獲得黏度為2,300cP的聚醯胺酸溶液B。 DMAc having a solid content concentration of 12 wt% after polymerization was added to the reaction vessel, stirred, and BAPP was charged. After sufficient stirring was performed until the charged diamine was completely dissolved, PMDA was added so that the molar ratio of the acid anhydride: diamine became 0.990: 1.000. Thereafter, stirring was continued at room temperature for 3 hours to obtain a polyamidic acid solution B having a viscosity of 2,300 cP.
(合成例3) (Synthesis example 3)
在反應容器中加入聚合後的固體成分濃度成為12wt%的量的DMAc而進行攪拌,投入BAPP。進行充分攪拌直至所投入的二胺完全溶解,然後以酸酐:二胺的莫耳比率成為0.990:1.000的方式加入PMDA及BPDA。以莫耳比率(PMDA:BPDA)成為95:5的方式加入PMDA與BPDA。其後,在室溫下繼續攪拌3小時,獲得黏度為2,000cP的聚醯胺酸溶液C。 DMAc having a solid content concentration of 12 wt% after polymerization was added to the reaction vessel, stirred, and BAPP was charged. After sufficiently stirring until the diamine was completely dissolved, PMDA and BPDA were added so that the molar ratio of acid anhydride: diamine became 0.990: 1.000. PMDA and BPDA were added in such a way that the Mohr ratio (PMDA: BPDA) became 95: 5. Thereafter, stirring was continued at room temperature for 3 hours to obtain a polyamidic acid solution C having a viscosity of 2,000 cP.
(製作例1) (Production example 1)
在厚度為12μm的銅箔上,均一地塗佈聚醯胺酸溶液B,在120℃下進行1分鐘30秒的加熱乾燥而將溶媒除去。反復進行3次該操作,使熱處理後的厚度成為約25μm。在乾燥後,自130℃起進 行階段性熱處理最終直至300℃以上,使醯亞胺化完成而獲得覆銅層壓板。關於所得的覆銅層壓板,通過將銅箔蝕刻除去而製作聚醯亞胺膜1。聚醯亞胺膜1的撕裂傳播阻力為8.0kN/m,玻璃化溫度為315℃。 On a copper foil having a thickness of 12 μm, the polyamic acid solution B was uniformly applied, and the solvent was removed by heating and drying at 120 ° C. for 1 minute and 30 seconds. This operation was repeated three times, and the thickness after heat processing was about 25 micrometers. After drying, advance from 130 ℃ The stepwise heat treatment is performed until the temperature is above 300 ° C., so that the imidization is completed to obtain a copper-clad laminate. About the obtained copper clad laminated board, the copper foil was etched and removed, and the polyimide film 1 was produced. The polyimide film 1 has a tear propagation resistance of 8.0 kN / m and a glass transition temperature of 315 ° C.
(製作例2) (Production example 2)
使用聚醯胺酸溶液C代替聚醯胺酸溶液B,除此以外與製作例1同樣地進行而製作聚醯亞胺膜2。聚醯亞胺膜2的撕裂傳播阻力為7.5kN/m,玻璃化溫度為310℃。 A polyimide film 2 was produced in the same manner as in Production Example 1 except that the polyamic acid solution C was used instead of the polyamic acid solution B. The tear resistance of the polyimide film 2 was 7.5 kN / m, and the glass transition temperature was 310 ° C.
[實施例1] [Example 1]
準備電解銅箔(厚度為12μm、聚醯亞胺絕緣層側的MD方向(Machine Direction;長條銅箔的行進方向)的表面粗糙度Rz為0.5μm、Ra為0.1μm)。對該銅箔的表面進行粗化處理後,進行含有規定量的鈷及鉬的鍍敷處理(金屬析出處理),進一步依序進行鍍鋅處理及鉻酸鹽處理,獲得銅箔1。將銅箔1中的進行了金屬析出處理的金屬元素的分析值表示於表1中。而且,將銅箔1的剖面的SEM相片表示於圖1中。當參照SEM相片時,粗化處理的粗化高度的最大值為0.25μm。 An electrolytic copper foil (having a thickness of 12 μm and a MD direction (Machine Direction on the polyimide insulation layer side) having a surface roughness Rz of 0.5 μm and Ra of 0.1 μm) was prepared. After roughening the surface of the copper foil, a plating treatment (metal precipitation treatment) containing a predetermined amount of cobalt and molybdenum is performed, and further zinc plating treatment and chromate treatment are sequentially performed to obtain a copper foil 1. Table 1 shows the analysis values of the metal elements subjected to the metal precipitation treatment in the copper foil 1. Moreover, the SEM photograph of the cross section of the copper foil 1 is shown in FIG. When referring to the SEM photograph, the maximum value of the roughening height of the roughening treatment was 0.25 μm.
在銅箔1的進行了金屬析出處理的面,依序塗佈(澆鑄)聚醯胺酸溶液B、聚醯胺酸溶液A、及聚醯胺酸溶液B,使熱處理後的厚度分別成為2μm、21μm及2μm。在乾燥後,自130℃起進行階段性熱處理最終直至300℃以上,使醯亞胺化完成而獲得單面覆銅層壓板1。在所得的單面覆銅層壓板1的聚醯亞胺絕緣層側 重合銅箔1,在340℃、壓力為6.7MPa的條件下進行15分鐘的熱壓接(層疊),獲得雙面覆銅層壓板1。將雙面覆銅層壓板1的評價結果表示於表2中。如表2所示,雙面覆銅層壓板1的5GHz及10GHz的傳輸損耗分別為2.5dB/10cm及3.9dB/10cm,未確認到對於鹽酸的滲入。而且,剝離強度的初始值及150℃、1000小時後的保持率分別在澆鑄側為1.1kN/m及82%,在層疊側為1.6kN/m及73%。 On the surface of the copper foil 1 subjected to the metal precipitation treatment, a polyamic acid solution B, a polyamic acid solution A, and a polyamic acid solution B were sequentially applied (casted) so that the thicknesses after the heat treatment became 2 μm, respectively. , 21 μm and 2 μm. After drying, stepwise heat treatment is performed from 130 ° C. to 300 ° C. or more, and the imidization is completed to obtain a single-sided copper-clad laminate 1. Polyimide insulation layer side of the obtained single-sided copper-clad laminate 1 The copper foil 1 was overlapped, and thermocompression bonding (lamination) was performed for 15 minutes under the conditions of 340 ° C. and a pressure of 6.7 MPa to obtain a double-sided copper-clad laminate 1. The evaluation results of the double-sided copper-clad laminate 1 are shown in Table 2. As shown in Table 2, the transmission losses of 5 GHz and 10 GHz of the double-sided copper-clad laminate 1 were 2.5 dB / 10 cm and 3.9 dB / 10 cm, respectively. No penetration of hydrochloric acid was confirmed. In addition, the initial values of the peel strength and the retention after 150 hours at 1000 ° C. were 1.1 kN / m and 82% on the casting side, and 1.6 kN / m and 73% on the lamination side, respectively.
(比較例1) (Comparative example 1)
準備電解銅箔(厚度為12μm、聚醯亞胺絕緣層側的MD方向的表面粗糙度Rz為0.4μm、Ra為0.1μm)。對該銅箔的表面進行粗化處理後,進行包含規定量的鎳及鈷的鍍敷處理(金屬析出處理),進一步依序進行鍍鋅處理及鉻酸鹽處理,獲得銅箔2。將銅箔2中的進行了金屬析出處理的金屬元素的分析值表示於表1中。而且,當參照銅箔2的剖面的SEM相片時,粗化處理的粗化高度的最大值為0.36μm。 An electrolytic copper foil (having a thickness of 12 μm and a surface roughness Rz in the MD direction of the polyimide insulation layer side of 0.4 μm and Ra of 0.1 μm) was prepared. After the surface of this copper foil is roughened, a plating treatment (metal precipitation treatment) including a predetermined amount of nickel and cobalt is performed, and then a zinc plating treatment and a chromate treatment are sequentially performed to obtain a copper foil 2. Table 1 shows the analysis values of the metal elements subjected to the metal precipitation treatment in the copper foil 2. When the SEM photograph of the cross section of the copper foil 2 is referred to, the maximum value of the roughening height of the roughening process is 0.36 μm.
使用銅箔2代替銅箔1,除此以外與實施例1同樣地進行而獲得雙面覆銅層壓板2。將雙面覆銅層壓板2的評價結果表示於表2中。如表2所示,雙面覆銅層壓板1的5GHz及10GHz的傳輸損耗分別為3.4dB/10cm及5.2dB/10cm。 A double-sided copper-clad laminate 2 was obtained in the same manner as in Example 1 except that the copper foil 2 was used instead of the copper foil 1. The evaluation results of the double-sided copper-clad laminate 2 are shown in Table 2. As shown in Table 2, the 5 GHz and 10 GHz transmission losses of the double-sided copper-clad laminate 1 are 3.4 dB / 10 cm and 5.2 dB / 10 cm, respectively.
(比較例2) (Comparative example 2)
準備電解銅箔(厚度為12μm、聚醯亞胺絕緣層側的MD方向的表面粗糙度Rz為0.4μm、Ra為0.1μm)。對該銅箔的表面進行粗化 處理後,進行包含規定量的鎳的鍍敷處理(金屬析出處理),進一步依序進行鍍鋅處理及鉻酸鹽處理,獲得銅箔3。將銅箔3中的進行了金屬析出處理的金屬元素的分析值表示於表1中。而且,當參照銅箔3的剖面的SEM相片時,粗化處理的粗化高度的最大值為0.12μm。 An electrolytic copper foil (having a thickness of 12 μm and a surface roughness Rz in the MD direction of the polyimide insulation layer side of 0.4 μm and Ra of 0.1 μm) was prepared. Roughen the surface of this copper foil After the treatment, a plating treatment (metal precipitation treatment) including a predetermined amount of nickel is performed, and further, a zinc plating treatment and a chromate treatment are sequentially performed to obtain a copper foil 3. Table 1 shows the analysis values of the metal elements subjected to the metal precipitation treatment in the copper foil 3. When the SEM photograph of the cross section of the copper foil 3 is referred to, the maximum value of the roughening height of the roughening process is 0.12 μm.
使用銅箔3代替銅箔1,除此以外與實施例1同樣地進行而獲得雙面覆銅層壓板3。將雙面覆銅層壓板3的評價結果表示於表2中。如表2所示,雙面覆銅層壓板3的5GHz及10GHz的傳輸損耗分別為2.5dB/10cm及3.9dB/10cm,但對於鹽酸的滲入為52.7μm。而且,剝離強度的初始值及150℃、1000小時後的保持率分別在澆鑄側為1.2kN/m及20%,在層疊側為1.4kN/m及17%。 A double-sided copper-clad laminate 3 was obtained in the same manner as in Example 1 except that the copper foil 3 was used instead of the copper foil 1. The evaluation results of the double-sided copper-clad laminate 3 are shown in Table 2. As shown in Table 2, the transmission losses at 5 GHz and 10 GHz of the double-sided copper-clad laminate 3 were 2.5 dB / 10 cm and 3.9 dB / 10 cm, respectively, but the penetration of hydrochloric acid was 52.7 μm. In addition, the initial values of the peel strength and the retention rates after 150 hours and 1000 hours were 1.2 kN / m and 20% on the casting side, and 1.4 kN / m and 17% on the lamination side, respectively.
(比較例3) (Comparative example 3)
準備電解銅箔(厚度為12μm、聚醯亞胺絕緣層側的MD方向的表面粗糙度Rz為0.8μm、Ra為0.2μm)。對該銅箔的表面進行粗化處理後,進行包含規定量的鎳的鍍敷處理(金屬析出處理),其次進行包含規定量的鈷及鉬的鍍敷處理,進一步依序進行鍍鋅處理及鉻酸鹽處理,獲得銅箔4。將銅箔4中的進行了金屬析出處理的金屬元素的分析值表示於表1中。而且,當參照銅箔4的剖面的SEM相片時,粗化處理的粗化高度的最大值為0.09μm。 An electrolytic copper foil (having a thickness of 12 μm, a surface roughness Rz in the MD direction of the polyimide insulation layer side of 0.8 μm, and Ra of 0.2 μm) was prepared. After roughening the surface of the copper foil, a plating treatment (metal precipitation treatment) including a predetermined amount of nickel is performed, followed by a plating treatment including a predetermined amount of cobalt and molybdenum, and further a zinc plating treatment and Chromate treatment, copper foil 4 was obtained. Table 1 shows the analysis values of the metal elements subjected to the metal precipitation treatment in the copper foil 4. When the SEM photograph of the cross section of the copper foil 4 is referred to, the maximum value of the roughening height of the roughening process is 0.09 μm.
使用銅箔4代替銅箔1,除此以外與實施例1同樣地進行而獲得雙面覆銅層壓板4。將雙面覆銅層壓板4的評價結果表示於表2中。如表2所示,雙面覆銅層壓板4的5GHz及10GHz的傳 輸損耗分別為2.8dB/10cm及4.3dB/10cm,但對於鹽酸的滲入為14.7μm。而且,剝離強度的初始值及150℃、1000小時後的保持率分別在澆鑄側為1.1kN/m及31%,在層疊側為1.6kN/m及41%。 A double-sided copper-clad laminate 4 was obtained in the same manner as in Example 1 except that the copper foil 4 was used instead of the copper foil 1. The evaluation results of the double-sided copper-clad laminate 4 are shown in Table 2. As shown in Table 2, the transmission frequency of 5GHz and 10GHz of double-sided copper-clad laminate 4 The transmission loss was 2.8dB / 10cm and 4.3dB / 10cm, respectively, but the penetration of hydrochloric acid was 14.7 μm. In addition, the initial values of the peel strength and the retention rates after 150 hours and 1000 ° C. were 1.1 kN / m and 31% on the casting side, and 1.6 kN / m and 41% on the lamination side, respectively.
將以上結果匯總表示於表1及表2中。 The above results are collectively shown in Tables 1 and 2.
以上,以例示的目的對本發明的實施方式進行了詳細說明,但本發明並不受到所述實施方式制約。 As mentioned above, although embodiment of this invention was described in detail for the purpose of illustration, this invention is not limited to the said embodiment.
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