TWI380275B - Shift register - Google Patents

Shift register Download PDF

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Publication number
TWI380275B
TWI380275B TW097126488A TW97126488A TWI380275B TW I380275 B TWI380275 B TW I380275B TW 097126488 A TW097126488 A TW 097126488A TW 97126488 A TW97126488 A TW 97126488A TW I380275 B TWI380275 B TW I380275B
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Taiwan
Prior art keywords
shift register
signal
node
voltage
control signal
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TW097126488A
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Chinese (zh)
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TW201003619A (en
Inventor
Chien Ting Chan
Hsi Rong Han
Wen Chun Wang
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Wintek Corp
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Priority to TW097126488A priority Critical patent/TWI380275B/en
Priority to US12/500,803 priority patent/US8456408B2/en
Publication of TW201003619A publication Critical patent/TW201003619A/en
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Publication of TWI380275B publication Critical patent/TWI380275B/en

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Description

13802751380275

TW4067PA 九、發明說明: 【發明所屬之技術領域】 ^發明是有關於-種移位暫存器,且特 別疋有關於一種具有έ呈由雷裳之 /、,、,工由冤谷之電荷儲存能力來進行位 準控制刼作之位準控制電路之移位暫存器。 【先前技術】 在科技發展日新月異的現今時代中,液晶顯示器已經 尹泛,應用在電子顯示產品上,如電視、電腦螢幕、筆記 1電腦、行動電話或個人數位助理等。液晶顯示器係包括 貝料驅動器(Data Driver)、掃描驅動器(Scan DHver)及液晶 顯:面板,其中液晶顯示面板中具有晝素陣列,而掃描驅 動。器用以依序開啟晝素陣列中對應之晝素列,以將資料驅 動器輸出之晝素資料傳送至畫素,進而顯示出欲顯示之影 像。 現今之技術多以移位暫存器(Shift Register)來實現出 可依序開啟晝素陣列中對應之晝素列的掃瞄驅動器。請參 照第1圖,其繪示傳統移位暫存器單元的電路圖。移位暫 存裔單元SR(n)係透過推升效應(B〇〇tstrapping)產生位準 控制訊號VC(n)。控制訊號vC(n)(位準實質上大於或等 於位準VDD-Vth,其中位準VDD例如為移位暫存器單元 SR(n)之高電壓位準,vth為電晶體TA之臨界電壓。電晶 體TA回應於控制訊號vc(n)來將高位準之時序訊號ckz 做為掃描訊號SC(n)輪出,其中時序訊號CKZ之高位準等 6 丄观275TW4067PA IX. Description of the invention: [Technical field to which the invention pertains] The invention relates to a type of shift register, and particularly relates to a charge having a έ έ 雷 雷 、,,,, The storage capacity is used to perform the level shift control of the shift register of the level control circuit. [Prior Art] In the current era of rapid technological development, liquid crystal displays have been used in electronic display products such as televisions, computer screens, notebook computers, mobile phones or personal digital assistants. The liquid crystal display includes a data driver, a scan driver (Scan DHver), and a liquid crystal display panel, wherein the liquid crystal display panel has a pixel array and is scanned and driven. The device is configured to sequentially open corresponding pixel columns in the pixel array to transmit the pixel data outputted by the data driver to the pixels, thereby displaying the image to be displayed. Today's technology mostly uses a Shift Register to implement a scan driver that can sequentially turn on the corresponding pixel columns in the pixel array. Please refer to Fig. 1, which shows a circuit diagram of a conventional shift register unit. The shift temporary unit SR(n) generates a level control signal VC(n) by a push-up effect (B〇〇tstrapping). Control signal vC(n) (the level is substantially greater than or equal to the level VDD-Vth, wherein the level VDD is, for example, the high voltage level of the shift register unit SR(n), and vth is the threshold voltage of the transistor TA The transistor TA responds to the control signal vc(n) to rotate the high-order timing signal ckz as the scan signal SC(n), wherein the high level of the timing signal CKZ is 6 丄275

TW4067PA 於電壓位準VDD。 然而,傳統移位暫存器單元SR(nM^、使用控制訊號 VC(n)來控制電晶體TA及TB之操作如此,將使得控制 訊號VC(n)欲驅動之電路負载較高,導致控制訊號¥(:(11) 之位準較低。舉例來說,控制訊號vc(n)之位準係低於位 準VDD-Vth。這樣一來,將會使得掃描訊號sc(n)之位準 貫質上低於高電壓位準VDD,導致掃描訊號sc(n)之位準 過低,而降低液晶顯示器之顯示畫面品質。 另外,電晶體TB之長寬比約為電晶體Tc之長寬比 之十倍,而電晶體tc被偏壓為二極體(Diode)。如此,由 電晶體TC及TB形成之反向器脚可回應於控制訊號 VC(n)來產生與其互為反相之輸出訊號然而由於電 a曰體TC之長寬比較小,如此當其導通時需承受電晶體 ,生之之較大電流。這樣一來,將會使電晶體TC產生壞 才貝致移位暫存器單元產生誤動作並使液晶顯示器之壽 命季又^ 此如何設計出使用壽命長之位準控制器及移位 暫存益,以提升液晶顯示器之使用壽命及其晝面品質乃業 界所致力之方向之一。 〃 【發明内容】 傳统提出一種移位暫存器(脑¥刪,相較於 ’本發明提出之移位暫存器可降低控制訊 ^所需之電路乂載。、縮短控制訊號VC⑻位準轉 、 、日避免知描汛號SC(n)之位準因控制訊號 7 1380275TW4067PA is at voltage level VDD. However, the operation of the conventional shift register unit SR (nM^, using the control signal VC(n) to control the transistors TA and TB, so that the control signal VC(n) is driven to a higher load, resulting in control The signal ¥(:(11) has a lower level. For example, the level of the control signal vc(n) is lower than the level VDD-Vth. This will cause the scan signal sc(n) to be in position. The accuracy is lower than the high voltage level VDD, which causes the level of the scanning signal sc(n) to be too low, and the display quality of the liquid crystal display is lowered. In addition, the aspect ratio of the transistor TB is about the length of the transistor Tc. Ten times the width ratio, and the transistor tc is biased into a diode (Diode). Thus, the inverter legs formed by the transistors TC and TB can be inverted in response to the control signal VC(n). However, since the length and width of the electric a-body TC are relatively small, it is required to withstand the transistor and generate a large current when it is turned on. This will cause the transistor TC to generate a bad The bit register unit generates a malfunction and the life expectancy of the liquid crystal display is again. How to design a long life level control It is one of the directions in the industry to improve the service life of the liquid crystal display and its quality. 〃 【Contents】 Traditionally, a shift register (brain-deletion) is compared. The shift register provided by the invention can reduce the circuit load required for the control signal, shorten the control signal VC (8) level shift, and avoid the position of the SC(n) due to the control signal 7 1380275

TW4067PA VC⑻之位轉 之使用壽命錢得 ,生錯4、延長移位智存 顯示器具有較佳的顯示畫^品質出之移位暫存器的液晶 根”發明提出_種“暫存器,包括 :早兀’各級移位暫存器單元用以經 /位暫存 :解路,電路及位準控二=升電:、位準 :ΓΓ::號之致能位準控制掃描訊號等於第::回應 訊遽。位準拉低電路回應於第二控 4序 掃描訊號等於第一電屋。 :Α 此位準控制 位準及第二控制二致能 為致能位準及為非致能位準。位準控制電路回唬 號,致能位準及輸人訊號之非致能位準分別心第5訊 制訊號為非致能位準及為致能位準。 一二 為讓本發明之上述内容能更明顯易懂,下文___較 佳貫施例,並配合所附圖式,作詳細說明如下: 【實施方式】 以下多個實施例之移位暫存器(shift Register)中各級 移位暫存器單元分別以一輸入訊號來驅動各級移位暫存 益單元中之電晶體。其中,各級移位暫存器單元中之電晶 體可以是非晶梦薄膜電晶體(Amorphous TFT)、多晶石夕薄膜 電晶體(Poly-silicon TFT)或是 n 型金氧半(Metal Oxide Semiconductor,MOS)電晶體。 8 1380275 * * r TW4067PA ’ 第一實施例 本實施例中之移位暫存器係應用在單邊掃描驅動 第=其!示依照本發明實施例的液晶顯示 ° 塊圖液日日顯不器10包括資料驅動器12、掃 . 動态14及顯不面板16。資料驅動器12用以經由m條次* .料線11來提供資料訊號SD⑴〜SD(m)至顯示面板16 = 掃描驅動ϋ 14用以經由n條掃描線13來提供掃描 sc⑴〜sc⑻至顯示面板16。而顯示面板16包括…t 素陣列其中各η列晝素al〜an係分別受到掃描訊號 SC(1)〜SC⑻之軸’來分職據與其對應之資料訊號 SD⑴〜SD^m)顯示畫面。其中,以爪為自然數。' 在本實施例中,掃描驅動器14例如具有移位暫 24 ’其中之η級移位暫存器單元分洲以提供掃描訊 SC(1)〜SC(n)。接下來係對移位暫存器%作進一步說明。 °月參,居第3圖,其繪示依照本發明實施例之移位暫在 ϋ的方塊圖。移位暫存器24包括n級移位暫存器單元 S(l)〜S⑻’时別輸出掃描訊號sc⑴〜sc(n)。各級位 存器單元s⑴〜s⑻包括輸入端IN、輸出端⑽ = RT、,NT1、時序端C1與時序端c2。移位暫存器單^ S(l)之輸入端IN接收起始訊號STV ,輸出端〇υτ輸 .描訊號SC(1)。移位暫存器單元S(2)〜S⑻之輸入端ΙΝ分 別接收則-級移位暫存器之輸出端〇1;丁所輸出之掃描訊 號SC(1)〜SC(n-l) ’輸出端〇υτ分別輸出掃描訊號 SC(2)〜SC(n)。 9 1380275 • kTW4067PA VC (8) bit of the life of the money, the error 4, extended shift smart display has a better display picture ^ quality out of the liquid crystal root of the shift register" invention proposed _ kind of "storage register, including : Early 兀 'shift register unit for each stage / temporary storage: circuit, circuit and level control 2 = power up:, level: ΓΓ:: enable the level control scan signal is equal to No.:: Responding to the news. The level pull-down circuit responds to the second control sequence. The scan signal is equal to the first power house. :Α This level control level and the second control level enable the enable level and the non-enable level. The level control circuit returns the ,, the enable level and the non-enable level of the input signal. The fifth signal is the non-enabled level and the enable level. In order to make the above-mentioned contents of the present invention more obvious and easy to understand, the following is a detailed description of the present invention, and is described in detail with reference to the following drawings: [Embodiment] The shifting of the following various embodiments Each shift register unit in the shift register drives the transistors in the shift temporary storage unit with an input signal. The transistor in each stage of the shift register unit may be an amorphous thin film transistor (Amorphous TFT), a polycrystalline silicon transistor (Poly-silicon TFT) or an n-type gold oxide half (Metal Oxide Semiconductor). , MOS) transistor. 8 1380275 * * r TW4067PA 'First embodiment The shift register in this embodiment is applied to the one-side scan drive. The liquid crystal display is shown in the embodiment of the present invention. 10 includes data driver 12, scan. Dynamic 14 and display panel 16. The data driver 12 is configured to provide the data signals SD(1) to SD(m) to the display panel 16 = scan drive ϋ 14 via the m lines* of the feed lines 11 for providing the scans sc(1) to sc(8) to the display panel via the n scan lines 13. 16. The display panel 16 includes an array of texels, wherein each of the η 昼 al al al al al an an an an an an an an SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC SC Among them, the claw is a natural number. In the present embodiment, the scan driver 14 has, for example, a shift register 24 in which the n-stage shift register unit branches to provide scan signals SC(1) to SC(n). Next, the shift register % is further explained. °月参, in the third figure, which shows a block diagram of the shift temporarily in accordance with an embodiment of the present invention. When the shift register 24 includes the n-stage shift register units S(1) to S(8)', the scan signals sc(1) to sc(n) are not output. Each of the level register units s(1)~s(8) includes an input terminal IN, an output terminal (10) = RT, an NT1, a timing terminal C1, and a timing terminal c2. The input terminal IN of the shift register unit ^S(l) receives the start signal STV, and the output terminal 〇υτ inputs the signal SC(1). The input terminals of the shift register units S(2) to S(8) respectively receive the output terminal 则1 of the stage-level shift register; the output signals SC(1)~SC(nl)' output of the output buffer 〇υτ outputs scan signals SC(2) to SC(n), respectively. 9 1380275 • k

TW4067PA 移位暫存器單its⑴〜S⑻中之奇數序移位暫存器單 元S(1)、S(3)、...,])之時序$C1接收時序訊號CLK, 其中之偶數序移位暫存器單元s⑺、s(4)、、㈣之時 序端C1接收時序訊號CLKB。時序訊號CLKB實質上為 時序訊號CLK之反相訊冑。移位暫存器單元s⑺〜s⑻輪 出之掃描訊號SC(2)〜SC(n)更被輸出至移位暫存器單元 S(l)〜S(n-l)之控制端RTe移位暫存器單元s⑴〜㈣例如 具有相近之結構與操作,接下來以移位暫存器單元 s(,中之第j級移位暫存器單元s⑴為例來對移位暫 存器單元S(l)〜s⑻之操作作說明。其巾,j為小於或等於 η之自然數。 、 請參照第4圖’其緣示乃帛3圖中移位暫存器單元灿 的詳細電路圖。移位暫存器單^ s⑴包括驅動電路,搬、 位準控制電路204、位準提升電路咖及位準拉低電路 208。位準控制電路204包括電晶體τι〜τ3、節點μ、^ 及電容C。節點Ρ2及Ρ3上之電_如分別被定義為控制 訊號Vc2⑴及Vc3⑴。電晶體Τ2及丁3之沒極(Drain)分別 耦接至節點P2及P3,源極(SGUIXe)接收低電壓vss,間極 接收以訊號。其巾輸人訊_如前—級移位暫存 器皁兀輸出之掃描訊號SCCM),電晶體12及丁3用以回 應於高位準之掃描峨SC㈣導通,以分職控制訊號 Vc2⑴及Vc3(j)等於低電壓VSS。 電容C之-端接收時序訊號_,另一端耦接至節 點P3。電容C用以儲存時序訊號CLKB相對於節點p3之 1380275The timing of the odd-numbered shift register unit S(1), S(3), ...,]) of the TW4067PA shift register singles (1) to S(8) receives the timing signal CLK, and the even-order shift The timing terminal C1 of the bit register unit s (7), s (4), and (4) receives the timing signal CLKB. The timing signal CLKB is essentially the inverted signal of the timing signal CLK. The scan signals SC(2)~SC(n) rotated by the shift register unit s(7)~s(8) are further outputted to the control terminal RTe shift temporary storage of the shift register unit S(l)~S(nl) The units s(1) to (4) have similar structures and operations, for example, and then the shift register unit s (1) shift register unit s (1) is taken as an example to the shift register unit S (l) The operation of ~s(8) is explained. The towel, j is a natural number less than or equal to η. Please refer to Figure 4 for the detailed circuit diagram of the shift register unit in Figure 3. The memory unit s(1) includes a driving circuit, a shifting, level control circuit 204, a level rising circuit, and a level pull-down circuit 208. The level control circuit 204 includes transistors τι to τ3, nodes μ, ^, and a capacitor C. The powers of nodes Ρ2 and Ρ3 are defined as control signals Vc2(1) and Vc3(1), respectively. The transistors Τ2 and D3 are coupled to nodes P2 and P3, respectively, and the source (SGUIXe) receives low voltage vss. The inter-pole receives the signal. The towel input signal _ such as the pre-stage shift register saponin output scan signal SCCM), the transistor 12 and D 3 respond The high level scan Bauer SC㈣ turned in divided Vc2⑴ level and the control signal Vc3 (j) equal to the low voltage VSS. The terminal of the capacitor C receives the timing signal _, and the other end is coupled to the node P3. Capacitor C is used to store timing signal CLKB relative to node p3 1380275

TW4067PA 電壓。電晶體T1之汲極接收高電壓VDD,源極耦接 點P2,閘極耦接至節點P3〇電^ 餘、制复號 na)i & YDD_〇 -、电屬 驅動電路202包括電晶體T4〜T6,其中電晶體T4 没極與閘極相互耦接以接收輸入訊號,源極耦接至節點< pi,節點pi上之電壓係被定義為控制訊號Vcl⑴。電曰曰 體T4用以回應於高位準之掃描訊號sc(j l)導通以使曰^ 制訊號Vc1(j)等於高位準。其中,當』不等於^,輪; 訊號為掃描訊號SCCM);當j等於i時,輸入訊號為起 :STV。在接下來的敘述中’以j大於i的情形為例作。 電晶體T5及T6之汲極耦接至節點P1,閘極分別接 =控制訊冑Ve2⑴及下—級移位暫存器單元提供之掃描訊 ,SCCJ+1),源極接收低電壓vss。電晶體15及丁6分別 从回應於高位準之控制訊號Vc2⑴及sc(j+1)導通,以 使控制訊號Vcl⑴等於低電壓vss。 極位準提升電路2〇6包括電晶體T7,此電晶體T7之汲 輪出=時序訊號CLK,閘極耦接至節點pl,源極耦接至 ^ η端OUT。輸出端〇υτ用以輸出掃描訊號叱⑴。電晶 插訊號用 高位準之控制訊號VCl⑴導通’以使‘ 、⑴貧質上等於時序訊號CLK。 Μ及位 =拉低電路208包括電晶體丁8及巧’其中電晶體 之沒極輕接至節點OUT,閘極分別接收控制訊號 1380275 • »TW4067PA voltage. The drain of the transistor T1 receives the high voltage VDD, the source is coupled to the point P2, the gate is coupled to the node P3, and the complex number na)i & YDD_〇-, the electric drive circuit 202 includes the electricity The crystals T4 to T6, wherein the transistor T4 has a pole and a gate coupled to each other to receive an input signal, and the source is coupled to the node < pi, and the voltage on the node pi is defined as a control signal Vcl(1). The electrical body T4 is responsive to the high level of the scan signal sc(j l) to turn on the signal Vc1(j) equal to the high level. Wherein, when 』 is not equal to ^, the wheel; the signal is the scan signal SCCM); when j is equal to i, the input signal is: STV. In the following description, the case where j is larger than i is taken as an example. The drains of the transistors T5 and T6 are coupled to the node P1, and the gates are respectively connected to the control signal Ve2(1) and the scan signal provided by the lower-stage shift register unit, SCCJ+1), and the source receives the low voltage vss. The transistors 15 and D6 are respectively turned on from the control signals Vc2(1) and sc(j+1) which are in response to the high level, so that the control signal Vcl(1) is equal to the low voltage vss. The pole level boosting circuit 2〇6 includes a transistor T7, wherein the transistor T7 turns out = the timing signal CLK, the gate is coupled to the node pl, and the source is coupled to the ^η terminal OUT. The output terminal 〇υτ is used to output a scanning signal 叱(1). The transistor input signal is turned on by the high level control signal VCl(1) so that ', (1) is as low as the timing signal CLK. Μ and bit = pull-down circuit 208 includes transistor D8 and Q' where the transistor is lightly connected to node OUT, and the gate receives control signals respectively 1380275 • »

TW4067PATW4067PA

Vc2⑴及下-級鋒暫存器單元提供之掃描訊號 SC〇 + 1),源極接收低電壓VSS。電晶體T8及T9分別用 以回應於高位準之控制訊號Vc2⑴及sc導通,以使 知描訊號SC⑴等於低電壓vss。 第5A〜5C圖繪示乃帛4圖之移位暫存器單元s⑴的相 關訊號時序圖。於時間週期TP1中,掃描訊號scGd)與 時序訊號CLKB等於高電壓VDD,時序訊號CLK及掃描 §fl號SC(j+l)等於低電壓VSS。此時電晶體T5、T6及T9 _ 為關閉,電晶體T4導通並使電晶體T7導通,使掃描訊號 SC⑴等於時序訊號CLK,即是等於低電壓vss。電晶體 T4並使控制訊號Vcl⑴之位準滿足:Vcl⑴=VDD_Vth。電 晶體T2及T3為導通’以分別使控制訊號vc2⑴及Vc3(j) 等於低電壓VSS,以關閉電晶體T8。其中Vth為電晶體 T4之臨界電壓。此時電容c兩端之跨壓實質上等於高電 壓 VDD。 於時間週期TP2中,時序訊號CLK由低電壓VSS提 升等於rsj電壓VDD ’此巨幅之電壓變化將使電壓訊號 Vcl(j)因推升效應(Boot-Strapping)而進一步提升一個差值 電壓AV’使電壓訊號Vcl〇)滿足:Vcl⑴=VDD-Vth+A V。 在本實施結構中,差值電壓Δν滿足:av= Cgs {VDD-VSS) 其中Cgs為電晶體T7之内部寄生電容,而CP1為節點P1 看到之等效電容。此時控制訊號Vc2(j)、Vc3〇)及掃描訊 號SC(j+l)均等於低電壓VSS,以關閉電晶艟T5、T6、T8 12 1380275 TW4067PA 及T9。此時掃描訊號SC⑴快迷充電炱高電壓vdD,電容 C兩端之跨壓實質上等於零。The Vc2(1) and the down-level front register unit provide the scan signal SC〇 + 1), and the source receives the low voltage VSS. The transistors T8 and T9 are respectively turned on in response to the high level control signals Vc2(1) and sc so that the known signal SC(1) is equal to the low voltage vss. Figures 5A to 5C show the timing diagrams of the related signals of the shift register unit s(1) of Figure 4. In the time period TP1, the scan signal scGd) and the timing signal CLKB are equal to the high voltage VDD, and the timing signal CLK and the scan §fl number SC(j+1) are equal to the low voltage VSS. At this time, the transistors T5, T6 and T9_ are turned off, the transistor T4 is turned on and the transistor T7 is turned on, so that the scanning signal SC(1) is equal to the timing signal CLK, which is equal to the low voltage vss. The transistor T4 satisfies the level of the control signal Vcl(1): Vcl(1) = VDD_Vth. The transistors T2 and T3 are turned "on" to cause the control signals vc2(1) and Vc3(j) to be equal to the low voltage VSS, respectively, to turn off the transistor T8. Where Vth is the threshold voltage of the transistor T4. At this time, the voltage across the capacitor c is substantially equal to the high voltage VDD. In the time period TP2, the timing signal CLK is boosted by the low voltage VSS equal to the rsj voltage VDD 'this huge voltage change will cause the voltage signal Vcl(j) to further boost a difference voltage AV due to the push-strapping effect. 'Making the voltage signal Vcl〇' satisfies: Vcl(1)=VDD-Vth+AV. In the present embodiment, the difference voltage Δν satisfies: av = Cgs {VDD - VSS) where Cgs is the internal parasitic capacitance of the transistor T7, and CP1 is the equivalent capacitance seen by the node P1. At this time, the control signals Vc2(j), Vc3〇) and the scanning signal SC(j+l) are both equal to the low voltage VSS to turn off the transistors T5, T6, T8 12 1380275 TW4067PA and T9. At this time, the scanning signal SC(1) is fast charging 炱 high voltage vdD, and the voltage across the capacitor C is substantially equal to zero.

於時間週期TP3中,掃抽訊號sC(j+1)與時序訊號 CLKB接近高電壓VDD,掃梅訊號sc(j_!)及時序訊號CLk 等於低電壓vss,此時電晶題丁2〜丁4及T7為關閉。㈣ 序訊號CLKB之上升緣將使電容c充電,並使控制訊號 Vc3G)之位準實質上接近時序訊號clKB之位準,亦即是 南電壓VDD ’使電晶體丁5及丁8導通。而電蟲體Τ6及 T9亦為導通’此時’電晶體Τ5及τ6係快速地將控制訊 號Vcl(j)放電至低電壓VSS’電晶體τ8及τ9係快速地 掃描訊號sc⑴放電至低電壓Vss。 、 :月參知、第5B ’其繪不乃第4圖中控制訊號Μ⑴與 Vc3⑴的訊號模擬圖。在第4圖中電晶體τι〜τ3《” 比(· Rati〇)例如等於50/5,而電容C例如等於〇 5微 法拉(Pw)m之敘述可知,本實施之2 暫存器單元S⑴可經由位準控制電路綱來於時序週^ TP3中產生尚位準之控制訊號Vc2⑴導通電晶體掃 訊號SC⑴等於低電壓vss,達到移位暫料單吏W 作。亦即,於時序週期τρ3時,本實施 ⑴之細 路204經由電容C之充放電操作與時序訊號=制電 以提供f控制訊號%⑴實質上反向之控制訊號動 由刖述#作可知,本實施例之移位暫存哭 以掃描訊號sccm)(或是起始訊號STV)來控&位⑴可 路204之操作。如此,相較於傳統移位暫存器單元控制, 本貫 13 TW4067PA 施例之移位暫存器單元S⑴可有效地降低控制訊號 驅動之電路負載,以避免控制訊號Vcl⑴之位準因電路 載較高而過低(例如低於電壓位準:VDDVth),並避、 描訊唬SC⑴之位準過低(例如低於電壓位準VDD)。 另外,移位暫存器單元S(j)中之位準控制電路2 經由電谷C之充放電操作與時序訊號CLKB之互動鹿 於掃描訊號叫供與其互為實質上反向之控制應 Vc2Cj)。在位準控制電路2G4中,電晶體了叩罝有實。 上相同之長寬比。如此,相較於傳統移位暫存器單元,I 實施例之位準控制電路綱可避免在傳統移位暫 本 SR⑻中因電晶體TBWC尺寸不匹配,導致電晶體t 承受過高之電流而壞損之問題。 在本實施财雖僅以移位暫存器單元叩 ^級移位暫存器單元S⑴的操作為例作說明,然,移t H4中其他級移位暫存11單元之結構與操作可根據 移位暫存,單^⑴之相關敘述類推得到。τ根據 Τ6:τί貫Γ例中,雖僅以移位暫存器單元S⑴之電晶體 T6及T9回應於τ—級移位暫存 二體 訊號SCCi+D來拉低控制訊號 二田 形為例作說明,狹,m“⑴知描心虎sc_情 一」 及丁9並不侷限於回庫於下 -級移㈣存料元s㈣提 ^下 舉例來說,移位暫存器單元SQ更進丁知作。 暫存器單元SG+2)中v w、第J 2級移位 訊號ve丨⑴糊賴==叫= 進行拉低控制 ⑴耦作。換言之,請參照第6 1380275In the time period TP3, the sweep signal sC(j+1) and the timing signal CLKB are close to the high voltage VDD, the sweep signal sc(j_!) and the timing signal CLk are equal to the low voltage vss, at this time, the electro-crystal title is 2~ 4 and T7 are off. (4) The rising edge of the sequence signal CLKB will charge the capacitor c, and the level of the control signal Vc3G) is substantially close to the level of the timing signal clKB, that is, the south voltage VDD' turns on the transistors D5 and D8. The worms 6 and T9 are also conducting 'at this time' the transistors Τ5 and τ6 quickly discharge the control signal Vcl(j) to the low voltage VSS' transistor τ8 and the τ9 system quickly scans the signal sc(1) to a low voltage. Vss. , : The month's participation, the 5th ′' is not the picture simulation of the control signals Μ(1) and Vc3(1) in Figure 4. In Fig. 4, the transistor τι~τ3 "" ratio (· Rati〇) is, for example, equal to 50/5, and the capacitance C is, for example, equal to 〇5 microfarads (Pw) m. It can be seen that the second register unit S(1) of the present embodiment is known. The control signal Vc2 (1) can be generated by the level control circuit in the timing cycle TP3. The conductive crystal scan signal SC(1) is equal to the low voltage vss, and the shift temporary unit is W. That is, in the timing period τρ3 When the thin circuit 204 of the present embodiment (1) is charged and discharged by the capacitor C and the timing signal = power is supplied to provide the f control signal % (1), the control signal is substantially reversed. The shift of the embodiment is known. Temporary crying scan signal sccm) (or start signal STV) to control & bit (1) access 204 operation. Thus, compared to the traditional shift register unit control, the local 13 TW4067PA instance shift The bit register unit S(1) can effectively reduce the circuit load of the control signal driving, so as to prevent the level of the control signal Vcl(1) from being too low (for example, lower than the voltage level: VDDVth), and avoiding and tracing. The level of SC(1) is too low (for example, below the voltage level VDD). The level control circuit 2 in the shift register unit S(j) interacts with the timing signal CLKB via the charging and discharging operation of the electric valley C. The deer scanning signal is called a control which is substantially opposite to each other (Vc2Cj). In the level control circuit 2G4, the transistor has the same aspect ratio. Thus, compared with the conventional shift register unit, the level control circuit of the I embodiment can avoid the conventional shift. In the temporary SR(8), the size of the transistor TBWC does not match, causing the transistor t to withstand excessive current and damage. In this implementation, only the shift register unit is used to shift the register unit. The operation of S(1) is taken as an example. However, the structure and operation of the shifting temporary storage 11 unit in t H4 can be obtained by analogy according to the shift temporary storage, single ^(1). τ according to Τ6: τί Γ example In the above, only the transistors T6 and T9 of the shift register unit S(1) are responsive to the τ-level shift temporary storage two-body signal SCCi+D to pull down the control signal Ertian shape as an example, narrow, m "(1) Knowing the heart of the tiger sc_ love one" and Ding 9 is not limited to return to the library in the lower-level shift (four) storage element s (four) ^ Next, for example, the shift register unit SQ is better known. In the register unit SG+2), v w, the J 2 level shift signal ve 丨 (1) paste == call = perform pull-down control (1) coupling. In other words, please refer to section 6 1380275

TW4067PA 圖,移位暫存器24’中各級移位暫存器單元s,(1)〜s,(n 2) 之控制端RT亦可分別回應於移位暫存器單元s,(3)〜 之控制訊號Vci(3)〜Vcl(n)來進行操作。 請參照第7圖,其繪示乃第6圖中移位暫存器單元s 的詳細電路圖。更詳細的說,電晶體T6及T9之閘極接收 之訊號係為移位暫存器單元S,(j+2)之控制訊號TW4067PA picture, the shift register unit s of the shift register 24', the control terminals RT of (1)~s, (n 2) can also respond to the shift register unit s, respectively (3) ) ~ Control signal Vci (3) ~ Vcl (n) to operate. Please refer to FIG. 7 , which is a detailed circuit diagram of the shift register unit s in FIG. 6 . In more detail, the signals received by the gates of transistors T6 and T9 are the control signals of shift register unit S, (j+2).

VclCj+2)’亦即為下二級移位暫存器單元中節點ρι點的訊 號。 》 在本實施例中’雖僅以移位暫存器翠元s⑴具有 4圖所繪π之結構的情形為例作說明’然移位暫 元S⑴並不揭限於具有第4圖所繪示之結構,而移位; ^元電路更可進行其他更動。舉例來說移位暫 存盗早兀S (j)亦可省略第4圖中電晶體Τ1&Τ2之抓 二:⑴來對電晶體τ5及電晶體: 進订控制’如¥8圖所示。根據第m圖可知,控制訊號 Vc職罐時間週期TP3中均由低電二 :電壓讎。因此,電晶體Τ6及丁8可在時間週期ΤΡ3 中回應於高位準之控制訊號加·分別 』VclCj+2)' is the signal of the node ρι in the lower level shift register unit. In the present embodiment, 'there is only a case where the shift register Cuiyuan s(1) has a structure of π drawn in FIG. 4 as an example. However, the shifting temporary element S(1) is not limited to having the drawing shown in FIG. The structure is shifted, and the ^-element circuit can make other changes. For example, shifting the temporary sneak 兀 S (j) can also omit the transistor Τ 1 & Τ 2 of the second picture: (1) to the transistor τ5 and the transistor: order control ' as shown in Figure 8 . According to the mth figure, the control signal Vc is in the tank cycle time period TP3 by the low voltage two: voltage 雠. Therefore, the transistors Τ6 and D8 can respond to the high level control signal plus time in the time period ΤΡ3.

Vcl⑴及掃描訊號,)至低電a卿。 本:施方式中之控制訊號Ve2⑴於時 以外之時間週期中,持續維持在一 ,月 之另-電壓(如圖5B所示),例如當高:壓· 此時控制訊號Vc2⑴會持續導 = 來控制掃誠SC·於低Mvss,_t= 15 1380275Vcl (1) and scan signal,) to low power a Qing. The control signal Ve2(1) in the mode is continuously maintained for one month and another voltage (as shown in FIG. 5B), for example, when the voltage is high: pressure, the control signal Vc2(1) is continuously controlled. To control the sweeping SC · low Mvss, _t = 15 1380275

TW4067PA scg)受到雜訊干擾,導致應用本實施方式之移位暫存器 24之掃描驅動器之掃描動作發生錯誤。然而長時間導通將 使,晶體T5及T8之臨界電壓易因應力效應(Stress略叫 而提升而產生誤動作(Malfunction^本實施方式中之電晶 體T6及T9可分別於電晶體丁5及丁8產生誤動作時拉= ⑴至低電壓vss,以避免掃描訊號_之位準 “較長t點本實施例移位暫存器單元S⑴更具有使 以各存器級移位暫存器單元分別 元中之電曰濟 動各級移位暫存器單 A 罨日日體。如此,相較於傳統移位暫 鈀例之移位暫存器可有 :早兀,本實 特定控制訊號驅動位暫存器單元中 需之時間、避免各針靡浐,’"制矾號位準轉換所 你'、隹絲 免各對應之知描訊號之位準因此批引^ ^ 間過長而發生錯誤並使得應用本發之 移位暫存ft㈣晶顯㈣具有較 2叫出之 另外,太昝, 于又,王町顯不畫面品質。 容之充放電操作與位準控制器係經由電 器單元,本實施例之移位暫 =有二交於傳統移位暫存 不易發生誤動作及使應用其:移”存器單* 及顯示晝面品質較佳之優點。ι不&使用壽命較長 1380275The TW4067PA scg) is disturbed by noise, resulting in an error in the scanning operation of the scan driver to which the shift register 24 of the present embodiment is applied. However, the long-time conduction will make the threshold voltages of the crystals T5 and T8 easy to cause malfunction due to the stress effect (Stress screams and raises the malfunction (Malfunction^ The transistors T6 and T9 in this embodiment can be respectively used in the transistor D5 and D8). When the malfunction occurs, pull = (1) to the low voltage vss to avoid the level of the scan signal _ "longer t point. The shift register unit S(1) of this embodiment has the function of shifting the register unit separately with each register level. In the electric 曰 曰 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 各级 如此 如此 如此 如此 如此 如此 如此 如此The time required in the register unit, to avoid the need for each needle, the '" system number is converted to you', the silk thread is free of the corresponding level of the known signal, so the lead ^ ^ is too long to occur The error causes the shift register of the present application to be ft (four) crystal display (4). It has a different appearance than the 2, and it is too sturdy, and again, Wang Town has no picture quality. The charge and discharge operation and level controller are via the electrical unit. The shift of the present embodiment is temporarily inconsistent with the conventional shift temporary storage. And make the application for which: Transferred "* Single memory and the display of better surface quality advantages .ι day without & long life 1,380,275

TW4067PA 弟·一實施例 本實施例中之移位暫存器係應用在雙邊掃描驅動器 照第9圖’其繪示依照本發明第二實施例的^ 不态的方塊圖。本實施例之液晶顯示器10,與第—實施 液晶顯示器1G不同之處在於第—實施例中之掃描驅 ‘盗14被掃描驅動器34取代。掃描驅動器34為雙邊掃 描驅,器’其包括奇數序及偶數序掃描驅動器34a及34b。 奇數序掃描驅動器3乜用以經由掃描線33a提供奇數 =描訊號SC(1)、SC(3)、...、sc㈣至顯示面板16 ; =數序掃描驅動器34b用以經由掃描線33b提供偶數序掃 =號SC(2)、SC(4)、...、SC⑷至顯示面板16,η例如為 奇數序及偶數序掃描驅動器34a及34b分別包括移 ,暫存器44a及44b。其中,移位暫存器4如及4仆具有 貫=上相近之結構與操作,接下來,係僅對移位暫存器4乜 =構與操作作進—步說明,而移位暫存器桃之結構與 '、二=據移位暫存器44a之相關敘述類推得到。' 存琴 > 、'第1 〇圖,其繪示依照本發明實施例之移位暫 之方塊圖。移位暫存器44a係包括掃描驅動器34中 SH(=序移位暫存器單元 SH(1)、SH(3)、SH(5)、...、 以幹Γ出υ奇暫存器單元SH⑴〜聲υ例如其分別用 序掃描訊號sc(l)〜sc(n-l)。 器單元犯⑴〜卿11·1)中之移位暫存器單元 序1祙 )、SH(9).....SH(n-3)之時序端Cl接收時 斤讯嬈CLK1,甘士 具中之移位暫存器單元SH(3)、SH(7)、 17TW4067PA An embodiment The shift register in this embodiment is applied to a bilateral scan driver. Fig. 9 is a block diagram showing a second embodiment of the present invention. The liquid crystal display 10 of the present embodiment is different from the first embodiment of the liquid crystal display 1G in that the scan driver 14 in the first embodiment is replaced by the scan driver 34. Scan driver 34 is a bilateral scan driver, which includes odd and even sequence scan drivers 34a and 34b. The odd-sequential scan driver 3 is configured to provide an odd number = a scan number SC (1), SC (3), ..., sc (four) to the display panel 16 via the scan line 33a; = a sequence scan driver 34b for providing via the scan line 33b The even sequence sweep = SC(2), SC(4), ..., SC(4) to the display panel 16, η, for example, the odd-sequence and even-sequence scan drivers 34a and 34b include shifts, registers 44a and 44b, respectively. Wherein, the shift register 4 and the servant have a structure and operation that are close to each other. Next, only the shift register 4 乜 = structure and operation are step-by-step description, and the shift is temporarily stored. The structure of the peach is similar to that of ', two = according to the description of the shift register 44a. 'Clock > ', '1', which is a block diagram of a shifting temporary in accordance with an embodiment of the present invention. The shift register 44a includes SH (= Sequential Shift Register Units SH(1), SH(3), SH(5), ...) in the scan driver 34 to dry out the odd-slot registers. The unit SH(1)~sound, for example, scans the signals sc(l)~sc(nl) respectively. The unit makes the shift register unit 1() in the (1)~qing11·1), SH(9). ....SH(n-3) timing terminal Cl receiving signal 娆CLK1, shift register unit SH(3), SH(7), 17

TW4067PA TW4067PA SH⑴)、...、shw)之時序端C1接收時序訊號clk3。 移位暫存器單元SH( 1)〜SH(n-3)之控制端RT分別接收移位 暫存器單it SH(3)〜SH(n-l)之節點NT1之電壓訊號以做為 控制訊號Vc 1 (1)〜Vc 1 (η-1)。移位暫存器單元SH( i)〜SH(n_ ι) 例如具有相近之結構與操作’接下來以移位暫存器單元 SH⑴〜SH(n-l)中之第i級移位暫存器單元SH(i)為例為例 來對移位暫存器單元之操作作說明。其中, i為小於或等於η-I之奇數。 請參照第11及第12圖,第11圖繪示乃第9圖中第i 級移位暫存器單元SH⑴的詳細電路圖,第12圖繪示乃第 W圖的相關訊號時序圖。本實施例之移位暫存器單元sH(i) 與第-實施例之移位暫存器單以⑴不同之處在於盆之輸 二端m接收之輸入訊號為掃描訊號sc㈣控制端RT 用以接收控制訊號Vcl(i+2)。 移位暫存器單元SH(i)與第一實施例之移位暫存器單 二夺Si之處在於時序訊號㈣及咖3處於高位準 於移位暫存器單元灿所接收之時序訊號 及CLKB處於高位準的時間的〔兩> 如此,移位暫存 态早το SH⑴係對應地在時間/ 間週期仍,及TP2,中,八貫提升為兩倍之時 間週期TP1及TP9由抽執行移位暫存器單元s⑴在時 移位暫t„ 仃之操作。在時間週期TP3,中, 準來1=即)係回應於控制訊號Vcl㈣)之高位 =執订與移位暫存器單元S(j)在時間週期τρ3中執行之The timing terminal C1 of the TW4067PA TW4067PA SH(1)), ..., shw) receives the timing signal clk3. The control terminal RT of the shift register unit SH(1)~SH(n-3) respectively receives the voltage signal of the node NT1 of the shift register unit one SH(3)~SH(nl) as the control signal Vc 1 (1) to Vc 1 (η-1). The shift register unit SH(i)~SH(n_ι) has, for example, a similar structure and operation 'next to the i-th shift register unit in the shift register unit SH(1) to SH(nl) SH(i) is taken as an example to illustrate the operation of the shift register unit. Where i is an odd number less than or equal to η-I. Please refer to FIG. 11 and FIG. 12, FIG. 11 is a detailed circuit diagram of the i-th stage shift register unit SH(1) in FIG. 9, and FIG. 12 is a timing diagram of the related signal in FIG. The shift register unit sH(i) of the present embodiment is different from the shift register of the first embodiment by (1) in that the input signal received by the two ends of the pot is the scan signal sc (four) control terminal RT. To receive the control signal Vcl(i+2). The shift register unit SH(i) is different from the shift register of the first embodiment in that the timing signal (4) and the coffee 3 are at a high level to receive the timing signal received by the shift register unit. And CLKB is at a high level of time [two]. Thus, the shift temporary state is earlier το SH(1) is correspondingly still in the time/interval period, and TP2, in the eight-pass doubling time period TP1 and TP9 are The execution of the shift register unit s(1) is temporarily shifted by t 仃 。. In the time period TP3, in the time period =1, that is, in response to the high level of the control signal Vcl (4)) = binding and shifting temporary storage Unit S(j) is executed in time period τρ3

TW4067FA 一根據第11圖、第12圖及第二實施例中移位 2SH(1)之操作敘述可知,本實施例之掃描訊號單 ί二:間實f上提升為第—實施例中對應之掃描訊於 :ω處於高位準的時間的兩倍,且掃描訊號處 ,間係彼此部分重疊。舉例來說,掃描訊=二立 掃描訊號sc(i+l)在時間週期TP2’的後半段期㈤Τχ2均為 導通,掃描訊號SC(i)與掃描訊號SC(M)在時間週期τρ=, 的前半段期間Τχ1均為導通。減,可知本實施例之液晶 顯不器10’實質上為一個具有液晶電容預先充電 (Pre-charge)功能之液晶顯示器。 舉例來說,在時間週期TP2,中,顯示面板16中第i 列晝素a⑴及第i_1列畫素a(i-l)分別回應於掃描訊號sc(i) 及SCO·1)而導通,此時資料驅動器12輸出之m筆第一資 料為欲寫入第M列晝素a(i-l)之m個晝素之資料。對於 第1列晝素a(i)而言’此m筆第一資料為預先充電資料, 用以對第1列晝素a⑴之m個畫素之晝素電容進行預先充 電。 在期間Tx2中’顯示面板16中第i+Ι晝素a(i+l)及第 1列畫素a(i)分别回應於掃描訊號sC(i+1)& sc(i)而導通, 此日守資料驅動器12輸出之m筆第二資料為欲寫入第i列 旦素a(〇之m個畫素之資料。此時,第i列畫素a(i)中之m #'分_存m筆第二資料,並顯示對應之影像畫 面對於第1+1烈畫素a(i+l)而言,此m筆第二資料為預 1380275TW4067FA According to the operation diagram of shifting 2SH(1) in FIG. 11 and FIG. 12 and the second embodiment, it can be seen that the scanning signal of the present embodiment is improved to the corresponding one in the first embodiment. Scanning is: twice the time when ω is at a high level, and the scanning signals partially overlap each other. For example, the scan signal=secondary scan signal sc(i+l) is turned on during the second half of the time period TP2' (5) ,2, and the scan signal SC(i) and the scan signal SC(M) are in the time period τρ=, During the first half of the period, Τχ1 is conducting. Further, it can be seen that the liquid crystal display 10' of the present embodiment is substantially a liquid crystal display having a liquid crystal capacitor pre-charge function. For example, in the time period TP2, the i-th pixel a(1) and the i-th column pixel a(il) in the display panel 16 are turned on in response to the scan signals sc(i) and SCO·1, respectively. The first data output by the data driver 12 is the data of the m pixels to be written into the Mth column a (il). For the first column of alizarin a(i), the first data of the m-character is pre-charged data for precharging the pixel capacitors of the m pixels of the first column of alizarin a(1). In the period Tx2, the i-th pixel a(i+l) and the first column a(i) in the display panel 16 are turned on in response to the scanning signals sC(i+1)& sc(i), respectively. The second data of the output of the data driver 12 is the data of the m pixels of the i-th column. In this case, the m in the i-th column a(i) '分_Save m pen second data, and display the corresponding image screen for the 1+1 luminescence a (i + l), the second data of this m pen is pre-1380275

TW4067PA 料對第i+1财素a(i+1)<m個畫 素電谷進行預先充電。 ’、之· 八如上述之操作,本實施例之各列畫素中之^個 =別根據欲寫人前-列畫素之m個晝素之取筆資料思谁可 旦素電容之預先充電操作。 '進行 在本實施例中雖僅以移位暫存器單元犯⑴〜 中之第L級移位暫存器單元SH⑴的^ 移位暫存器*中其他級移位暫存器單 ^月,^ =移位暫存料元犯(㈣軸 !tT中ί級移位暫存器單元之操作可根據移:二 盗仏中移位暫存n SH(i)之操作類推得到。 暫存 在本實施例中,雖僅以移位暫存器單元卿)之電曰 6及^回應於控制訊號Vcl(i+2)來拉低控制訊號曰 c, (1)及掃描訊號SC(I)的情形為例作說明,然,電晶 及T9,並不偈限於回應於控制訊號%㈣來進:操 在本實施例中,雖僅以移位暫存器單元SH(i)中勺 電,體W,的情形為例作朗,然,移位暫存^括 (1)之電路並不侷限於此。舉例來說,移位暫存器时一凡 ,)亦可進行如第8圖之變動來省略電晶體T1,及。ς疋 设置,而直接以控制訊號Vc3(i)來控制電晶體τ 之 之操作。 久Γ6, 與第一實施例中之移位暫存器相近地,本 位暫存器可有效地降低各級移位暫存器單元中料控=移 20 1380275 % lTW4067PA pre-charges the i+1th element a(i+1)<m pixels. '································································································· operating. 'In the present embodiment, only the shift register unit commits (1) to the L-th shift register unit SH(1) of the shift register * in the shift register * other stages of the shift register , ^ = shift temporary storage element ((4) axis! tT ί level shift register unit operation can be obtained according to the shift: second stolen shift shift temporary storage n SH (i) operation analogy. In this embodiment, the control signal 曰c, (1) and the scan signal SC(I) are pulled down in response to the control signal Vcl(i+2) only by the battery 6 and the shift register unit. The case is illustrated by way of example. However, the crystal and T9 are not limited to responding to the control signal %(4). In the present embodiment, only the shift register unit SH(i) is used. The case of the body W is exemplified as a case. However, the circuit of the shift temporary storage (1) is not limited thereto. For example, when shifting the register, the transistor T1 can be omitted as shown in FIG.设置 Set and control the operation of transistor τ directly with control signal Vc3(i). For a long time 6, similar to the shift register in the first embodiment, the local register can effectively reduce the material control in each shift register unit = shift 20 1380275 % l

TW4067PA 訊號驅動之電路負載、縮短控制訊號位準轉換所需之時 間、避免各對應之掃描訊號之位準因此控制訊號之位準轉 換時間過長而發生錯誤並使得應用本發明提出之移位暫 存器的液晶顯示器具有較佳的顯示晝面品質。另外,本實 • 施例之移位暫存器亦具有位準控制電路中之電晶體尺寸 - 大小為匹配、電晶體不易壞損、移位暫存器單元不易發生 誤動作及使應用其之液晶顯示器使用壽命較長及顯示晝 面品質較佳之優點。 • 綜上所述,雖然本發明已以一較佳實施例揭露如上, 然其並非用以限定本發明。本發明所屬技術領域中具有通 常知識者,在不脫離本發明之精神和範圍内,當可作各種 之更動與潤飾。因此,本發明之保護範圍當視後附之申請 專利範圍所界定著為準。 21 1380275TW4067PA signal-driven circuit load, shortening the time required for control signal level conversion, avoiding the level of each corresponding scan signal, thus the control signal level conversion time is too long and an error occurs, and the shift proposed by the present invention is applied. The liquid crystal display of the memory has better display quality. In addition, the shift register of the present embodiment also has a transistor size in the level control circuit - the size is matched, the transistor is not easily damaged, the shift register unit is less prone to malfunction, and the liquid crystal is applied. The display has a long service life and the advantages of better quality of the kneading surface. In view of the above, the present invention has been disclosed in a preferred embodiment, and is not intended to limit the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the scope of the invention is defined by the scope of the appended claims. 21 1380275

TW4067PA 【圖式簡單說明】 第1圖繪示傳統移位暫存器單元的電路圖。 第2圖繪示依照本發明實施例的液晶顯示器的方塊 圖。 第3圖繪示依照本發明實施例之移位暫存器的方塊 圖。 第4圖繪示乃第3圖中移位暫存器單元S⑴的詳細電 路圖。 • 第5A-5C圖繪示乃第4圖之移位暫存器單元S(j)的相 關訊號時序圖。 第6圖繪示本實施例之移位暫存器的另一方塊圖。 第7圖繪示本實施例之移位暫存器單元的另一電路 圖。 第8圖繪示本實施例之移位暫存器單元的再一電路 圖。 第9圖繪示依照本發明第二實施例的液晶顯示器的方 •塊圖。 第10圖繪示依照本發明實施例之移位暫存器的方塊 圖。 第11圖繪示乃第9圖中第i級移位暫存器單元SH(i) 的詳細電路圖。 第12圖繪示乃第10圖的相關訊號時序圖。 22 1380275TW4067PA [Simple Description of the Drawing] Figure 1 shows the circuit diagram of the conventional shift register unit. Fig. 2 is a block diagram showing a liquid crystal display according to an embodiment of the present invention. Figure 3 is a block diagram of a shift register in accordance with an embodiment of the present invention. Fig. 4 is a detailed circuit diagram of the shift register unit S(1) in Fig. 3. • Figures 5A-5C show the timing diagrams of the associated signals for the shift register unit S(j) of Figure 4. FIG. 6 is another block diagram of the shift register of the embodiment. Fig. 7 is a circuit diagram showing another embodiment of the shift register unit of the embodiment. Fig. 8 is a circuit diagram showing still another embodiment of the shift register unit of the embodiment. Figure 9 is a block diagram of a liquid crystal display according to a second embodiment of the present invention. Figure 10 is a block diagram of a shift register in accordance with an embodiment of the present invention. Fig. 11 is a detailed circuit diagram showing the i-th stage shift register unit SH(i) in Fig. 9. Figure 12 is a timing diagram of the correlation signal of Figure 10. 22 1380275

TW4067PA 【主要元件符號說明】 SR⑻、S⑴〜S(n)、S,⑴〜S’(n)、S”G)、S”’⑴、 SH(1)〜SH(k):移位暫存器單元 ΤΑ、TB、TC、T1 〜T9、ΤΓ〜T9,:電晶體 10、10’ :液晶顯示器 11 :資料線 12 ·貢料驅動益 13、33a、33b :掃描線 • 14、34 :掃描驅動器 24、24’、44a、44b :移位暫存器 16 :顯示面板 al〜an :畫素 IN :輸入端 OUT :輸出端 RT :控制端TW4067PA [Explanation of main component symbols] SR(8), S(1)~S(n), S, (1)~S'(n), S"G), S"'(1), SH(1)~SH(k): Shift temporary storage Unit ΤΑ, TB, TC, T1 〜 T9, ΤΓ~T9,: transistor 10, 10': liquid crystal display 11: data line 12 · tribute drive benefit 13, 33a, 33b: scan line • 14, 34: scan Driver 24, 24', 44a, 44b: shift register 16: display panel a1~an: pixel IN: input terminal OUT: output terminal RT: control terminal

Cl、C2 :時序端 • C :電容Cl, C2: timing terminal • C: capacitor

Cgs :寄生電容 34a :奇數序移位暫存器 34b :偶數序移位暫存器 23Cgs: parasitic capacitance 34a: odd-order shift register 34b: even-order shift register 23

Claims (1)

101年.10月22日核正替換百 101年.10月22日核正替換百 2012/10/22_la 申復 & 修正 申請專利範園: 驅動器中種移位暫存,應用於單邊掃描 些移位暫存Ϊ巧暫存S包括複數級隸暫存器單元,該 輸出端產生1彳早=之—第η級移位暫存器單元用以經由一 存器單元包括固掃描訊號,η為自然數,該第η級移位暫 控制訊號之致能位if 干捉幵电路,回應於一第一控 制師描訊號等於-第-時序訊號; 抑刹2準拉低電路’回應於第二控制訊號之致能位名 控制该知描訊號等於一第一電壓; 回應於一輸入訊號之致能位準控制該第 驅動電路 ;==::=:=r—位 兮势-位準控制電路,回應於該輸人訊號之致能位準控制 二-控制簡為非致能位準,回應於該輸人訊號之非致 月b位準控制該第二控制訊號為致能位準; 其中該位準控制電路包括: 。一第一節點,該第一節點上之電壓為一第三控制 訊號,該第三控制訊號係相關於該第二控制訊號; 一電荷儲存電路,一端接收一第二時序訊號,另 一端耦接至該第一節點,該電荷儲存電路用以儲存該第二 時序訊號相對於該第一節點之電壓;及 一第—電晶體,閘極(Gate)接收該輸入訊號,第 一源極(Source)/及極(Drain)搞接至該第一節點,第二源極/ 09712648& • 〆 - 〆 ·1013|σ^43-0 24 1380275 101年.10月日核正替換頁 2012/10/22_la 申復&修正 汲極接收該第一電壓,該第一電晶體回應於該輸入訊號之 致能位準提供該第一電壓至該第一節點以非致能該第三 控制訊號。 2. 如申請專利範圍第1項所述之移位暫存器,其中該 位準控制電路更包括: 一第二節點,該第二節點上之電壓為該第二控制訊 號; 一第二電晶體,閘極接收該輸入訊號,第一源極/汲極 耦接至該第二節點,第二源極/汲極接收該第一電壓,該第 二電晶體回應於該輸入訊號之致能位準提供該第一電壓 至該第二節點以非致能該第二控制訊號;以及 一第三電晶體,閘極耦接至該第一節點,第一源極/ 汲極接收一第二電壓,第二源極/汲極耦接至該第二節點, 該第三電晶體用以回應於該第三控制訊號以提供該第二 電壓至該第二節點,進而致能該第二控制訊號。 3. 如申請專利範圍第1項所述之移位暫存器,其中該 位準拉低電路更包括: 一第四電晶體,閘極接收第n+1級移位暫存器單元所 輸出之掃描訊號,第一源極/汲極耦接至該輸出端,第二源 極/汲極接收該第一電壓,該第四電晶體用以回應於第n+1 級移位暫存器單元所輸出之掃描訊號的致能位準,控制該 掃描訊號等於該第一電壓。 4. 如申請專利範圍第1項所述之移位暫存器,其中該 位準拉低電路更包括: 037126.488· 10134Ό7.343-0 25 1380275 101年.10月22日梭正替換頁 2012/10/22_1Π 申復 & 修正 一第四電晶體,閘極接收第η+2級移位暫存器單元中 之第一控制訊號,第一源極/汲極耦接至該輸出端,第二源 極/汲極接收該第一電壓,該第四電晶體用以回應於第η+2 級移位暫存器單元中之第一控制訊號的致能位準,控制該 掃描訊號等於該第一電壓。 5. 如申請專利範圍第1項所述之移位暫存器,其中該 驅動電路更包括: 一第三節點,該第三節點上之電壓等於該第一控制訊 號;及 一第五電晶體,閘極接收第η+1級移位暫存器單元所 輸出之掃描訊號,第一源極/汲極輛接至該第三節點,第二 源極/汲極接收該第一電壓,該第五電晶體用以回應於第 η+1級移位暫存器單元所輸出之掃描訊號的致能位準,控 制該第一控制訊號等於該第一電壓。 6. 如申請專利範圍第1項所述之移位暫存器,其中該 驅動電路更包括: 一第三節點,該第三節點上之電壓等於該第一控制訊 號;及 一第五電晶體,閘極接收第η+2級移位暫存器單元中 之第一控制訊號,第一源極/汲極耦接至該第三節點,第二 源極/汲極接收該第一電壓,該第五電晶體用以回應於第 η+2級移位暫存器單元中之第一控制訊號的致能位準,控 制該第一控制訊號等於該第一電壓。 7. 如申請專利範圍第1項所述之移位暫存器,其中該 :1:013?〇7.343-〇 09712 6*4 8& 26 101年10月2之日後正替換頁 驅動電路包括: 2012/10/22_1"申復&修正 一第三節點,該第三節點 號; * 電髮等於該第一控制訊 一第六電晶體,閘極與第一 號,第二源極/汲極耦接至該第二二及極接收該輸入訊 一第七電晶體,閘極接收該第即^ ’及 /汲極接收耦接至該第三筋 一工制訊號,第一源極 電壓。 ,第二源極/汲極接收該第一 位準範圍第1項所述之移,存器,其中該 /二=序:;該第-控制訊號,第-源極 端。 4第一源極/汲極耦接至該輸出 位準拉低二2&圍第1項所述之移位暫存器,其中該 ⑽端閉=二控制訊號,第-源極 10.如f —祕錄接㈣第—電壓。 如甲句專利範圍第i項所述 該輸入訊號為該第 移位暫存器’其中 號。 3 /第n-1級移位暫存器單元輸出之掃描訊 你沾一镳、種移位暫存器(ShiftRegi_ ’應用於一顯示面 二描驅動器中,該移位暫存器包括複數奇數級 器早7〇與複數偶數級移位暫存器單元,且該些奇 數、、及與偶數級移位暫存器單元分別位於該 顯示面板的兩 •097126.488 1013^07343-0 27 22 8 mmwj 對側,該些移位智存器_ 2ω·/22_〗《申復&修正 以經由一輸出端連生:早^中一第11級移位暫存器單元用 級移位暫存器單元勺—個掃描訊號,11為自然數,該第η 一位準提升電路 控制該掃描訊號等於二應於一第—控制訊號之致能位準 -位準拉低電路時序訊號; 控制該掃描訊號第二控制訊號之致能位準 一驅動電路,# 认 , 一控制訊號為致能位入訊號之致能位準控制該第 準控制該第一控制訊號為非致能位準;以及 9第- 2控1電路’回應於該輸入訊號之致能位準控制 :二為非致能位準’回應於該輸入訊號之非致 月匕位準控制該第二控制訊號為魏位準; 其中該位準控制電路包括: ^ 第節點,該第一節點上之電壓為一第三控制 訊號,該第三,制訊號係相關於該第二控制訊號; 一電荷儲存電路,一端接收一第二時序訊號,另 -端輕接至該第-節點,該電荷儲存電路用以儲存該第二 時序訊號相對於該第一節點之電壓;及 一第一電晶體,閘極(Gate)接收該輸入訊號,第 一源極(Source)/及極(Drain)耦接至該第一節點,第二源極/ 汲極接收該第一電壓,該第一電晶體回應於該輸入訊號之 致能位準提供該第一電壓至該第一節點以非致能該第三 控制訊號。 097.12 6.4 88, 10134073,43-0 28 1380275 101年10月2》日核正替換頁 2012/10/22_lst 申復 & 修正 12. 如申請專利範圍第11項所述之糝位暫存器,其中 該位準控制電路更包括: 一第二節點,該第二節點上之電壓為該第二控制訊 號; 一第二電晶體,閘極接收該輸入訊號,第一源極/汲極 耦接至該第二節點,第二源極/汲極接收該第一電壓,該第 二電晶體回應於該輸入訊號之致能位準提供該第一電壓 至該第二節點以非致能第二控制訊號;以及 一第三電晶體,閘極耦接至該第一節點,第一源極/ 汲極接收一第二電壓,第二源極/汲極耦接至該第二節點, 該第三電晶體用以回應於該第三控制訊號以提供該第二 電壓至該第二節點,進而致能該第二控制訊號。 13. 如申請專利範圍第11項所述之移位暫存器,其中 該位準拉低電路更包括: 一第四電晶體,閘極接收第n+2級移位暫存器單元之 第一控制訊號,第一源極/汲極耦接至該輸出端,第二源極 /汲極接收該第一電壓,該第四電晶體用以回應於第n+2 級移位暫存器單元中第一控制訊號的致能位準,控制該掃 描訊號等於該第一電壓。 14. 如申請專利範圍第11項所述之移位暫存器,其中 該驅動電路更包括: 一第三節點,該第三節點上之電壓等於該第一控制訊 號;及 一第五電晶體,閘極接收第n+2級移位暫存器單元中 .09712 64 8& 1Ό134Ό7.343—0 • 方· 29 1380275 101年.10月22日修正替換π 2012yi0/22_la 申復&修正 之第一控制訊號,第一源極/汲極耦接至該第三節點,第二 源極/汲極接收該第一電壓,該第五電晶體用以回應於各第 n+2級移位暫存器單元中第一控制訊號的致能位準,控制 該第一控制訊號等於該第一電壓。 15. 如申請專利範圍第11項所述之移位暫存器,其中 該雙邊掃描驅動器提供之掃描訊號為預充電(Pre-charge) 掃描訊號。 16. 如申請專利範圍第11項所述之移位暫存器,其中 該驅動電路包括: 一第三節點,該第三節點上之電壓等於該第一控制訊 號; 一第六電晶體,閘極與第一源極/汲極接收該輸入訊 號,第二源極/汲極耦接至該第三節點;及 一第七電晶體,閘極接收該第二控制訊號,第一源極 /汲極接收耦接至該第三節點,第二源極/汲極接收該第一 電壓。. 17. 如申請專利範圍第11項所述之移位暫存器,其中 該位準提升電路包括: 一第八電晶體,閘極接收該第一控制訊號,第一源極 /汲極接收該第一時序訊號,第二源極/汲極耦接至該輸出 端。 18. 如申請專利範圍第11項所述之移位暫存器,其中 該位準拉低電路包括: 一第九電晶體,閘極接收該第二控制訊號,第一源極 097126488 .* - · · 1013:^7543-0 30 1380275 101年.10月22日修正替換頁 2012/10/22_lst 串復 & 修正 /汲極耦接至該輸出端,第二源極/汲極接收該第一電壓。 19.如申請專利範圍第11項所述之移位暫存器,其中 該輸入訊號為該第n-2級移位暫存器早元輸出之掃描訊 號。 097126488 10134;〇7343-0101 years. October 22, nuclear replacement 100 years. October 22 nuclear replacement replacement 2012/10/22_la Shen Fu & amendment application patent park: drive shifting temporary storage, for single-sided scanning The shift register temporary storage S includes a plurality of stage register units, and the output generates a first-time-n-th stage shift register unit for including a solid scan signal via a register unit. η is a natural number, the η-level shifting of the temporary control signal is enabled by the dry-capture circuit, in response to a first controller code being equal to - the first-order signal; The enablement bit name of the second control signal controls the knowledge signal to be equal to a first voltage; and controls the first drive circuit in response to an enable level of an input signal; ==::=:=r-bit potential-bit The quasi-control circuit is responsive to the enable level of the input signal to control the second control block to be a non-enabled level, and the second control signal is controlled to be the enable bit in response to the non-receiving b level of the input signal The quasi-control circuit includes: a first node, the voltage on the first node is a third control signal, the third control signal is related to the second control signal; a charge storage circuit, one end receives a second timing signal, and the other end is coupled Up to the first node, the charge storage circuit is configured to store the voltage of the second timing signal relative to the first node; and a first transistor, the gate receives the input signal, and the first source (Source) ) / / Drain (Drain) to the first node, the second source / 09712648 & • 〆- 〆 · 1013 | σ ^ 43-0 24 1380275 101. October Japanese nuclear replacement page 2012/10/ The second transistor receives the first voltage, and the first transistor provides the first voltage to the first node to disable the third control signal in response to the enable level of the input signal. 2. The shift register according to claim 1, wherein the level control circuit further comprises: a second node, the voltage on the second node is the second control signal; a crystal, the gate receives the input signal, the first source/drain is coupled to the second node, the second source/drain receives the first voltage, and the second transistor is responsive to the input signal Providing the first voltage to the second node to disable the second control signal; and a third transistor, the gate is coupled to the first node, and the first source/drain receives a second a second source/drain is coupled to the second node, the third transistor is responsive to the third control signal to provide the second voltage to the second node, thereby enabling the second control Signal. 3. The shift register according to claim 1, wherein the level pull-down circuit further comprises: a fourth transistor, the gate receiving the output of the n+1th shift register unit a scan signal, a first source/drain is coupled to the output, a second source/drain receives the first voltage, and the fourth transistor is responsive to the n+1th shift register The enabling level of the scanning signal output by the unit controls the scanning signal to be equal to the first voltage. 4. The shift register according to claim 1, wherein the level pull-down circuit further comprises: 037126.488· 10134Ό7.343-0 25 1380275 101. October 22 shuttle replacement page 2012/ 10/22_1Π Shen Fu & Amend a fourth transistor, the gate receives the first control signal in the n+2 stage shift register unit, and the first source/drain is coupled to the output terminal, The second source/drain receives the first voltage, and the fourth transistor is configured to respond to the enable level of the first control signal in the n+2 stage shift register unit, and control the scan signal to be equal to the The first voltage. 5. The shift register of claim 1, wherein the driving circuit further comprises: a third node, the voltage on the third node is equal to the first control signal; and a fifth transistor The gate receives the scan signal output by the n+1th shift register unit, the first source/drain is connected to the third node, and the second source/drain receives the first voltage. The fifth transistor is configured to control the first control signal to be equal to the first voltage in response to an enable level of the scan signal output by the n+1th shift register unit. 6. The shift register of claim 1, wherein the driving circuit further comprises: a third node, the voltage on the third node is equal to the first control signal; and a fifth transistor The gate receives the first control signal in the n+2th stage shift register unit, the first source/drain is coupled to the third node, and the second source/drain receives the first voltage. The fifth transistor is configured to control the first control signal to be equal to the first voltage in response to an enable level of the first control signal in the n+2th stage shift register unit. 7. The shift register as described in claim 1 wherein: 1:013?〇7.343-〇09712 6*4 8& 26 the replacement of the page drive circuit after October 2, 101 includes: 2012/10/22_1"Shen Fu&corrects a third node, the third node number; *Electricity is equal to the first control signal, a sixth transistor, gate and first number, second source/汲The pole is coupled to the second diode and receives the input signal, and the gate receives the first and the second poles, and the first source voltage is coupled to the third rib. . The second source/drain receives the shift described in item 1 of the first level range, wherein the second/sequence: the first control signal, the first-source terminal. 4, the first source/drain is coupled to the output level lowering 2 & the shift register according to item 1, wherein the (10) terminal is closed = two control signals, and the first source is 10. f - secret recording (four) - voltage. The input signal is the number of the first shift register as described in item i of the scope of the patent. 3 / n-1th level shift register unit output scan message you touch a shift register (ShiftRegi_ ' applied to a display surface two trace driver, the shift register includes a complex odd number The stage is 7 〇 and the complex even-numbered shift register unit, and the odd-numbered, and the even-numbered shift register units are respectively located on the display panel of the two. 097126.488 1013^07343-0 27 22 8 mmwj On the opposite side, the shifting buffers _ 2ω·/22_〗 "Shen Fu & correction to connect through an output: early ^ 1st level 11 shift register unit with stage shift register The unit scoop is a scanning signal, and 11 is a natural number. The η-th order quasi-boosting circuit controls the scanning signal to be equal to an enable level of the first control signal-level low-lowering circuit timing signal; controlling the scanning The second control signal of the signal is capable of a driving circuit, and the control signal is an enabling level of the enabling signal. The first control signal is a non-enabled level; and 9 The -2 control 1 circuit 'responds to the enable level control of the input signal: two The non-enabled level 'responds to the non-receiving level of the input signal to control the second control signal to be Wei level; wherein the level control circuit comprises: ^ the first node, the voltage on the first node is one a third control signal, the third signal is related to the second control signal; a charge storage circuit, one end receives a second timing signal, and the other end is connected to the first node, the charge storage circuit is used for Storing the voltage of the second timing signal relative to the first node; and a first transistor, the gate receives the input signal, and the first source/drain is coupled to the first a first source, the second source/drain receives the first voltage, and the first transistor provides the first voltage to the first node to disable the third control signal in response to an enable level of the input signal 097.12 6.4 88, 10134073, 43-0 28 1380275 October 2, 2010, the nuclear replacement page 2012/10/22_lst Shen Fu & Amendment 12. The position register as described in claim 11 Wherein the level control circuit further comprises: a second node The voltage on the second node is the second control signal; a second transistor, the gate receives the input signal, the first source/drain is coupled to the second node, and the second source/drain receives The first voltage, the second transistor provides the first voltage to the second node to disable the second control signal in response to the enable level of the input signal; and a third transistor coupled to the gate Up to the first node, the first source/drain receives a second voltage, the second source/drain is coupled to the second node, and the third transistor is responsive to the third control signal to provide The second voltage is applied to the second node to enable the second control signal. 13. The shift register of claim 11, wherein the level pull-down circuit further comprises: a fourth transistor, the gate receiving the n+2th shift register unit a control signal, a first source/drain is coupled to the output, a second source/drain receives the first voltage, and the fourth transistor is responsive to the n+2th shift register The enabling level of the first control signal in the unit controls the scanning signal to be equal to the first voltage. 14. The shift register of claim 11, wherein the driving circuit further comprises: a third node, the voltage on the third node is equal to the first control signal; and a fifth transistor , the gate receives the n+2 shift register unit. .09712 64 8& 1Ό134Ό7.343—0 • Fang· 29 1380275 101. October 22 revised replacement π 2012yi0/22_la Shen Fu & Amendment a first control signal, a first source/drain is coupled to the third node, a second source/drain receives the first voltage, and the fifth transistor is responsive to each n+2th shift The enabling level of the first control signal in the register unit controls the first control signal to be equal to the first voltage. 15. The shift register of claim 11, wherein the scan signal provided by the bilateral scan driver is a pre-charge scan signal. 16. The shift register of claim 11, wherein the driving circuit comprises: a third node, a voltage on the third node is equal to the first control signal; a sixth transistor, a gate The first source/drain receives the input signal, the second source/drain is coupled to the third node, and a seventh transistor, the gate receives the second control signal, the first source/ The drain receiving is coupled to the third node, and the second source/drain receives the first voltage. 17. The shift register of claim 11, wherein the level boosting circuit comprises: an eighth transistor, the gate receiving the first control signal, and the first source/drain receiving The first timing signal, the second source/drain is coupled to the output. 18. The shift register of claim 11, wherein the level pull-down circuit comprises: a ninth transistor, the gate receiving the second control signal, the first source 097126488.* - · · 1013:^7543-0 30 1380275 101. October 22 revision replacement page 2012/10/22_lst series complex & correction / drain is coupled to the output, the second source / drain receives the first A voltage. 19. The shift register of claim 11, wherein the input signal is a scan signal output by the n-2th stage shift register. 097126488 10134; 〇7343-0
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