1JJI007 九、發明說明： 【發明所屬之技術領域】 導熱之散熱器及 其製==涉及-織_，謂涉及—種奈米碳管 【先前技術】 度越=:Ξ著之快速發展’半導體器件集成化程 —心 制足該需要，風扇散熱、水冷_散教及 熱方式被廣泛，並取得-定散熱效果 觸Γ面，從般相互接觸面積不到2% ’未有—個理想之接 熱器傳遞熱量得效果，☆，傳統之 等"、、< 數較问之熱介面材料於散熱器與半導體器件之間 以增力^面制面積:提高半導體科與賴關之鱗遞效果。 合材料，如分散於聚合物基體以形成複 i埶㈣μ墨^硼、減^、氧倾、銀或其他金卿。此種材料 材ί因:二°物基體之性質。其$以油脂、相變材料爲基體之複合 Γ==態，能與熱源表面浸湖，故，翻熱阻較小，而以石夕 以合材料之接觸熱阻相對較大。該類材料#遍缺陷係整 财隹ι'ϋ'，小’典型值爲1瓦/米•開(w/mK) ’這已經不能適應半導 ^成化妨提喊散熱之絲。另，_增加聚合物紐之導熱顆粒含 置’使付顆粒與縣之間儘量相互接觸，可以增加複合材料整體之導熱係 數，如某些特殊介面材料因此可達到4_8瓦/米•開(w/mK)然聚合物基 租之導熱顆粒S量增加至-定程度時，會使聚合物基體失去原本性能如 油脂會變硬，從而制效果變差，橡料變得較硬，從而失去應有之柔拿刀 性，這都將使熱介面材料性能大大降低。 先前技術提供-錄熱n ’該散熱器基座與發熱元件接觸之表面上生 長有奈^碳管陣列，以及包覆所述奈米碳管之聚合物基體，利用奈米碳管 之軸向高導熱性能，降低散熱器與發熱元件間接觸熱阻。然，一般之奈米 兔官經與發熱元件在虔力下接觸之後，大都會出現傾倒現象，從而使得奈 5 1331007 米碳管之軸向高導熱性能不能得到充分利用，從而增大散熱器與 間熱阻’影響散熱器之散熱性能。 ·… ^有鑑於此，提供一種能與熱源良好接觸，具優良導熱效果之散熱器實 必要。 •【内容】 以下，將以實施例說明一種能與熱源良好接觸，具優良導熱效果之散 熱器。 、 月 以及通過實施例說明一種散熱器之製造方法。 為貫現上述内容，提供一種散熱器，其包括：一基座，其具有一第一 •，面及一與所述第一表面相對之第二表面；複i：散熱鰭片，所述散熱鰭片 從基座第一表面沿遠離基座之方向延伸，其中所述散熱器進一步包括：複 數突起，形成於所述基座之第二表面；複數奈米碳管，形成於所述複數突 起之間。 以及，一種散熱器之製造方法，其包括以下步驟： 提供一散熱器，其包括：一基座，其具有一第一表面及—與所述第一 表面相對之第二表面；複數散熱鰭片，所述複數散熱鰭片從基座 沿遠離基座之方向延伸； 表 於所述基座之第二表面形成複數突起； 於所述複數突起之間形成複數奈米碳管。 相較於先前技術，本實施例提供之散熱器，散熱器基座第二表面具有 複數突起，所述複數突起可在奈米碳管稍有變形時，直接與發熱元件接/觸， 提供一支撐力，從而可避免奈米碳管過度變形導致其傾倒，充分發揮奈米 *炭管之良好軸向導熱性能。 【實施方式】 請參閱第一圖與第二圖，為本實施例提供之散熱器丨，其包括：一基座 10,其具有一第一表面11及一與所述第一表面丨丨相對之第二表面12 ;複數 散熱鰭片20，所述複數散熱鰭片20從基座10第一表面11沿遠離基座1〇之方 向延伸，其中所述散熱器丨進一步包括：複數突起3〇，所述複數突起3〇形成 於所述基座10之第二表面12 ;複數奈米碳管40，形成於所述複數突起3〇之 6 1331007 間。 所述散熱鰭片20可為各種形狀之散熱鰭片，其與基座ι〇可為一體結 構’亦可通過焊接連接，本實施例中使用片狀散熱鰭片，且所述基座1〇與 散熱鰭片20為一體結構，其材料可選自鋁、銅或鋁銅合金》所述複數突起 • · 30與基座10之材料相同，其高度為1〇奈米〜10微米，所述複數突起3〇之形狀 _可選自金字塔形、圓柱體、環形體以及網格陣列t之一種或幾種之混合。 本貫ic*例中之突起30為離散分佈’形狀為金字塔形。所述複數奈米碳管 基本平行且基本垂直於第二表面12，其高度為10奈米〜1〇微米，優選地，所 述複數奈米碳管40稍高於或等於所述複數突起30之高度，其可為單壁奈米 Φ 碳管或多壁奈米碳管’亦可兩者皆包含。所述'熱器1可進一步包括一包覆 所述複數奈米碳管40之導熱層50 ’優選地，所述複數奈米碳管4〇 —端伸出 導熱層50，以便能直接於熱源接觸。所述導熱層5〇主要由有機物組成，其 内可填充一些導熱粉體，所述有機物可為石臘、矽油等，本實施例中使兩 矽油，所述導熱粉體材料可為銀、氧化鋅、氮化硼、銅及氧化鋁等，本實 施例中使用銅粉。 使用時，該散熱器1之第二表面12可與發熱元件接觸，所述複數突起3〇 可在奈米碳管40稍有變形時，直接與發熱元件表面接觸，提供一支撐力， 從而可避免奈米碳管40過度變形導致其傾倒，因此可充分發揮奈米碳管之 良好軸向導熱性能。 ® 請參閱第三圖、第四圖，為本實施例提供之散熱器丨之製造方法流程 圖，其包括以下步驟： 步驟100 :提供一散熱器，其包括：一基座1〇，其具有一第—表面^及 一與所述第一表面11相對之第二表面12 ;複數散熱鰭片20，所述複數散熱 鰭片20從基座第一表面11沿遠離基座1〇之方向延伸。所述散熱鰭片2〇可為 各種形狀之散熱鰭片，其與基座1〇可為一體結構，亦可通過焊接連接，本 實施例中使用片狀散熱鰭片，且所述基座1〇與散熱鰭片2〇為一體結構，其 材料可選自鋁、銅或鋁銅合金。 步驟200 :於所述基座1〇之第二表面12形成複數突起3〇。所述複數突起 30與基座10之材質相同，其可通過微影蝕刻或奈米壓印之方法形成，本實 7 1331007 施例中使用奈米壓印方法形成複數突起30。為提高奈米壓印之效果’亦可 於本步驟實施前，對基座1〇之第二表面12進行拋光處理。所述複數突起加 之高度為10奈米~1〇微米，本實施例中突起3〇高度約丨微米。所述複數3〇之 形狀可選自金字塔形'圓柱體、環形體以及網格陣列令之一種或幾種之混 --合。本實施例中之突起30為離散分佈，形狀為金字塔形。 此 . 步驟300 :於所述複數突起30之間形成複數奈米碳管40。所述複數奈米 碳管40之形成方法包括直接生長，移植以及靜電吸附等，其中直接生長法 包括化學氣相沈積法、電弧放電法及雷射消熔法。本實施例中使用化學氣 相沈積法，其包括以下步驟：首先，沈積催化劑301於所述基座1〇之第二表 φ 面。催化劑301層之厚度爲5〜30奈米，催化劑30Ϊ層沈積之方法可選用真空 熱蒸鑛揮發法，也可選用電子束蒸發法。催化劑3〇1之材料可選用鐵、始、 鎳或其合金，本實施例中選用鐵作爲催化劑301材料，其沈積之厚度爲1〇奈 米％然後，通入碳源氣’在基座1〇之第二表面12生長奈米碳管4〇 ^具體地， 將帶有催化劑301層之散熱器置於空氣中，在30(rc下退火，以使催化劑3〇1 層乳化、收細成爲奈米級之催化劑3〇1顆粒。待退火完畢，再將分佈有催化 劑301顆粒之散熱器接觸底面置於反應室内（圖未示），通入碳源氣乙炔，利 用化學氣相沈積法，在上述催化劑顆粒上生長奈米碳管4〇，碳源氣亦可選 用其他含碳之氣體，如乙烯等。採用上述方法形成之複數奈米碳管4〇基本 • 平行且基本垂直於第二表面12，其高度為丨〇奈米〜1〇微米，其可為單壁奈米 碳管或多壁奈米碳管，亦可兩者皆包含，所述複數奈米碳管4〇之生長高度 可通過反應時間來控制，反應時間越長生長出之奈米碳管4〇越高，反應時 間越短生長出之奈米碳管4〇越矮。本實施例生長之奈米碳管之高度爲1微 米’為多壁奈米碳管。 本技術方案提供之散熱器1之製造方法，可進一步包括形成一導熱層50 包覆所述複數奈米碳管4(^可將一導熱層5〇通過直接塗佈之方法形成在奈 米碳管40上》所述導熱層50主要由有機物組成，其内可填充一些導熱粉體， 所述有機物可為石臘、矽油等，本實施例中使用矽油，所述導熱粉體材料 可為銀、氧化鋅、氮化硼、銅及氧化鋁等，本實施例中使用銅粉。 相較於先前技術，本實施例提供之散熱器，散熱器基座第二表面具有 8 1331007 f數突起，所述複數突起可在奈米碳管稍有變形時，直接與發熱元件接觸’ 提供一支撐力，從而可避免奈米碳管過度變形導致其傾倒，充分 碳管之良好軸向導熱性能。 & η-' 綜上所述，本發明確已符合發明專利之要件，爰依法提出專利申請。 .惟，以上所述者僅為本發明之較佳實施方式，本發明之範圍並不以上述實 .施方式為限，舉凡熟習本案技藝之人士援依本發明之精神所作之等效修飾 或變化’皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 第一圖係本發明實施例所提供之散熱器示意圖。 第二圖係本發明實施例所提供之散熱器丨丨處放大示意圖。 第三圖係本發明實施例所提供之散熱器之製造流程圖。 第四（A)圖係本發明實施例之散熱器製造方法中於散熱器表面形成複 數突起示意圖。 第四（B)圖係本發明實施例之散熱器製造方法中於散熱器表面沈積催 化劑示意圖。 第四（C)圖係本發明實施例之散熱器製造方法中於散熱器表面生長奈 米碳管示意圖。 第四（D)圖係本發明實施例之散熱器製造方法中於散熱器表面形成導 熱層示意圖。 【主要元件符號說明】 散熱器 1 基座 10 第一表面 11 第二表面 12 散熱鰭片 20 突起 30 奈米碳管 40 導熱層 50 催化劑 3011JJI007 Nine, invention description: [Technical field of invention] Heat-conducting heat sink and its system == involving-weaving_, involving a kind of carbon nanotubes [Prior technology] Degree =: rapid development of 'semiconductor Device integration process - the heart is needed, the fan heat dissipation, water cooling _ scatter and heat methods are widely used, and the heat dissipation effect is achieved, and the contact area is less than 2%. 'Nothing' is ideal. The heat transfer effect of the heat exchanger, ☆, the traditional etc., and the number of hot interface materials between the heat sink and the semiconductor device to increase the area of the surface area: improve the scale of the semiconductor and Laiguan Hand over the effect. The composite material, for example, is dispersed in a polymer matrix to form a complex (tetra) μ ink, boron, minus, oxygen, silver or other gold. This material is due to the nature of the two-object matrix. Its composite Γ== state with grease and phase change material as the matrix can be immersed in the surface of the heat source. Therefore, the thermal resistance is small, and the contact thermal resistance of the composite material is relatively large. This type of material ################################################################################################ In addition, _ increase the thermal conductivity of the polymer to contain 'to make the particles and the county as much as possible to contact each other, can increase the overall thermal conductivity of the composite material, such as some special interface materials can therefore reach 4_8 watts / m • open (w /mK) However, when the amount of the thermally conductive particles S rented by the polymer base is increased to a certain degree, the polymer matrix loses its original properties, such as the grease becomes hard, and the effect is deteriorated, the rubber material becomes hard, and thus the loss should be There is a soft knife, which will greatly reduce the performance of the thermal interface material. The prior art provides - recording heat n 'the surface of the heat sink base in contact with the heating element is grown with a carbon nanotube array, and the polymer matrix covering the carbon nanotube, using the axial direction of the carbon nanotube High thermal conductivity, reducing the thermal resistance between the heat sink and the heating element. However, after the general contact between the rabbit and the heating element under the force of force, the dumping phenomenon will appear in the general direction, so that the axial high thermal conductivity of the Nai 3 1331007 m carbon tube cannot be fully utilized, thereby increasing the radiator and The inter-thermal resistance affects the heat dissipation performance of the heat sink. ·... ^ In view of this, it is necessary to provide a heat sink that can be in good contact with a heat source and has excellent heat conduction effects. • [Contents] Hereinafter, a heat sink which is in good contact with a heat source and has excellent heat conduction effect will be described by way of examples. A method of manufacturing a heat sink will be described by way of example. In order to achieve the above, a heat sink is provided, comprising: a base having a first surface, a second surface opposite to the first surface; and a heat sink fin, the heat dissipation The fin extends from the first surface of the pedestal in a direction away from the pedestal, wherein the heat sink further includes: a plurality of protrusions formed on the second surface of the pedestal; a plurality of carbon nanotubes formed on the plurality of protrusions between. And a method of manufacturing a heat sink, comprising the steps of: providing a heat sink comprising: a base having a first surface and a second surface opposite to the first surface; a plurality of heat sink fins The plurality of heat dissipating fins extend from the pedestal in a direction away from the pedestal; a plurality of protrusions are formed on the second surface of the pedestal; and a plurality of carbon nanotubes are formed between the plurality of protrusions. Compared with the prior art, the heat sink provided by the embodiment has a plurality of protrusions on the second surface of the heat sink base, and the plurality of protrusions can directly contact and contact the heat generating component when the carbon nanotube is slightly deformed, thereby providing a The supporting force can avoid the excessive deformation of the carbon nanotubes and cause them to fall, and fully exert the good axial thermal conductivity of the carbon nanotubes. [Embodiment] Please refer to the first figure and the second figure. The heat sink according to the embodiment includes: a base 10 having a first surface 11 and a surface opposite to the first surface a second surface 12; a plurality of heat dissipation fins 20 extending from the first surface 11 of the base 10 in a direction away from the base 1 , wherein the heat sink further includes: a plurality of protrusions 3〇 The plurality of protrusions 3〇 are formed on the second surface 12 of the susceptor 10; a plurality of carbon nanotubes 40 are formed between the 61331007 of the plurality of protrusions 3〇. The heat dissipating fins 20 can be fins of various shapes, which can be integrated with the pedestal ι ' can also be connected by soldering. In this embodiment, the chip fins are used, and the pedestal 1 〇 The heat sink fin 20 is of a unitary structure, and the material thereof may be selected from the group consisting of aluminum, copper or aluminum-copper alloy. The plurality of protrusions 30 are the same as the material of the base 10 and have a height of 1 〇 nanometer to 10 micrometers. The shape of the plurality of protrusions 3 may be selected from a mixture of one or more of a pyramid shape, a cylinder, a ring body, and a grid array t. The protrusions 30 in the present example of ic* are discretely distributed in the shape of a pyramid. The plurality of carbon nanotubes are substantially parallel and substantially perpendicular to the second surface 12 and have a height of 10 nm to 1 μm. Preferably, the plurality of carbon nanotubes 40 are slightly higher than or equal to the plurality of protrusions 30. The height may be a single-walled nanometer Φ carbon tube or a multi-walled carbon nanotube' or both. The 'heater 1 may further include a heat conducting layer 50' covering the plurality of carbon nanotubes 40. Preferably, the plurality of carbon nanotubes 4 end extend beyond the heat conducting layer 50 so as to be directly able to be directly connected to the heat source. contact. The heat conducting layer 5 is mainly composed of an organic material, and may be filled with some heat conductive powder. The organic material may be paraffin, eucalyptus oil, etc. In the embodiment, two eucalyptus oils may be used, and the heat conductive powder material may be silver and oxidized. Zinc, boron nitride, copper, alumina, etc., copper powder is used in this embodiment. In use, the second surface 12 of the heat sink 1 can be in contact with the heat generating component, and the plurality of protrusions 3 can directly contact the surface of the heat generating component when the carbon nanotube 40 is slightly deformed, thereby providing a supporting force. The excessive deformation of the carbon nanotube 40 is prevented from causing it to fall, so that the good axial thermal conductivity of the carbon nanotube can be fully utilized. The third embodiment and the fourth figure are a flow chart of a method for manufacturing a heat sink according to the embodiment, which includes the following steps: Step 100: providing a heat sink, comprising: a base 1 having a base a first surface and a second surface 12 opposite to the first surface 11; a plurality of heat dissipation fins 20 extending from the base first surface 11 away from the base 1 . The heat dissipating fins 2 can be fins of various shapes, which can be integrated with the pedestal 1 , or can be connected by soldering. In this embodiment, the fins are used, and the pedestal 1 is used. The crucible and the fins 2 are integrally formed, and the material thereof may be selected from aluminum, copper or aluminum-copper alloy. Step 200: forming a plurality of protrusions 3〇 on the second surface 12 of the base 1〇. The plurality of protrusions 30 are made of the same material as the susceptor 10, and can be formed by photolithography or nanoimprinting. In the embodiment of the present invention, a plurality of protrusions 30 are formed by a nanoimprint method. In order to improve the effect of the nanoimprinting, the second surface 12 of the susceptor 1 may be polished before the implementation of this step. The plurality of protrusions are added at a height of 10 nm to 1 μm. In this embodiment, the protrusions 3〇 are about 丨 microns. The shape of the plurality of ridges may be selected from the group consisting of a pyramidal 'cylinder, a ring, and a grid array. The protrusions 30 in this embodiment are discretely distributed and have a pyramid shape. Step 300: Form a plurality of carbon nanotubes 40 between the plurality of protrusions 30. The method for forming the plurality of carbon nanotubes 40 includes direct growth, transplantation, and electrostatic adsorption, and the direct growth methods include chemical vapor deposition, arc discharge, and laser ablation. In the present embodiment, a chemical vapor deposition method is used which comprises the steps of first depositing a catalyst 301 on the second surface φ of the susceptor 1 . The thickness of the catalyst 301 layer is 5 to 30 nm, and the method of depositing the catalyst 30 layer may be carried out by vacuum steam evaporation or by electron beam evaporation. The material of the catalyst 3〇1 may be selected from iron, the first, the nickel or the alloy thereof. In the present embodiment, iron is used as the material of the catalyst 301, and the thickness of the deposition is 1 〇 nanometer%, and then the carbon source gas is introduced into the susceptor 1 Specifically, the second surface 12 of the crucible is grown on the carbon nanotubes. Specifically, the heat sink with the catalyst layer 301 is placed in the air, and annealed at 30 (rc) to emulsify and shrink the catalyst 3〇1 layer. Nano-sized catalyst 3〇1 particles. After annealing, the bottom surface of the radiator with the catalyst 301 particles is placed in the reaction chamber (not shown), and the carbon source gas acetylene is introduced, and the chemical vapor deposition method is used. The carbon nanotubes are grown on the catalyst particles, and the carbon source gas may be selected from other carbon-containing gases, such as ethylene, etc. The plurality of carbon nanotubes formed by the above method are substantially parallel and substantially perpendicular to the second. The surface 12 has a height of 丨〇 nanometer ~ 1 〇 micrometer, which may be a single-walled carbon nanotube or a multi-walled carbon nanotube, or both, and the growth of the plurality of carbon nanotubes The height can be controlled by the reaction time, and the longer the reaction time is, the longer the growth is. The higher the carbon nanotubes are, the shorter the reaction time is, and the shorter the carbon nanotubes are, the shorter the carbon nanotubes are grown. The height of the carbon nanotubes grown in this embodiment is 1 micron, which is a multi-walled carbon nanotube. The manufacturing method of the heat sink 1 provided by the solution may further include forming a heat conducting layer 50 to cover the plurality of carbon nanotubes 4 (the heat conducting layer 5 may be formed by direct coating on the carbon nanotube 40) The heat conductive layer 50 is mainly composed of organic matter, and may be filled with some heat conductive powder. The organic material may be paraffin, eucalyptus oil, etc. In the present embodiment, eucalyptus oil is used, and the heat conductive powder material may be silver or oxidized. Zinc, boron nitride, copper, aluminum oxide, etc., copper powder is used in this embodiment. Compared with the prior art, the heat sink provided by the embodiment has a second surface of the heat sink base having 8 1331007 f number protrusions. The plurality of protrusions can directly contact the heating element when the carbon nanotube is slightly deformed to provide a supporting force, thereby preventing the carbon nanotube from being excessively deformed and causing it to fall, and the good axial heat conduction performance of the sufficient carbon tube. & η -' In summary, the present invention has indeed met The requirements of the invention patents are filed according to law. However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiments, and those skilled in the art are assisted. The equivalent modifications or variations made in the spirit of the present invention are intended to be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic diagram of a heat sink provided by an embodiment of the present invention. The heat sink of the embodiment of the present invention is a schematic diagram of the manufacture of the heat sink provided by the embodiment of the present invention. The fourth (A) is a heat dissipation method for manufacturing the heat sink according to the embodiment of the present invention. A schematic diagram of a plurality of protrusions is formed on the surface of the device. The fourth (B) is a schematic diagram of depositing a catalyst on the surface of the heat sink in the method for manufacturing a heat sink according to an embodiment of the present invention. The fourth (C) is a method for manufacturing a heat sink according to an embodiment of the present invention. Schematic diagram of the growth of carbon nanotubes on the surface of the radiator. The fourth (D) drawing is a schematic view showing the formation of a heat conducting layer on the surface of the heat sink in the heat sink manufacturing method of the embodiment of the present invention. [Main component symbol description] Heatsink 1 Base 10 First surface 11 Second surface 12 Heat sink fin 20 Projection 30 Carbon nanotube 40 Thermal layer 50 Catalyst 301