CN100405587C - Radiator and its preparation method - Google Patents
Radiator and its preparation method Download PDFInfo
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- CN100405587C CN100405587C CNB2003101123373A CN200310112337A CN100405587C CN 100405587 C CN100405587 C CN 100405587C CN B2003101123373 A CNB2003101123373 A CN B2003101123373A CN 200310112337 A CN200310112337 A CN 200310112337A CN 100405587 C CN100405587 C CN 100405587C
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Abstract
The present invention relates to a radiator which comprises a basal body, a plurality of radiation fins, a carbon nanometer tube film and a heat conduction coating layer, wherein a plurality of radiation fins extends from one surface of the basal body; the carbon nanometer tube film is formed on the other surface of the basal body and comprises a plurality of carbon nanometer tubes; the carbon nanometer tubes are mutually and basically parallel and are basically perpendicular to the other surface of the basal body of the radiator; the heat conduction coating layer is formed on the carbon nanometer tube film. In addition, the present invention also provides a preparation method of the radiator, and the preparation method has the steps that the radiator is provided; the radiator comprises one basal body and a plurality of radiation fins which extend from one surface of the basal body; the other surface of the basal body of the radiator is polished; catalysts are deposited on the other surface of the basal body of the radiator; carbon source gas is led into the basal body, the carbon nanometer tubes are grown on the other surface of the basal body of the radiator for forming the carbon nanometer tube film; the heat conduction coating layer is formed on the carbon nanometer tube film.
Description
[technical field]
The present invention relates to a kind of radiator, relate in particular to a kind of radiator that utilizes carbon nano-tube heat conduction and preparation method thereof.
[background technology]
In recent years, along with the fast development of semiconductor device integrated technique, the integrated degree of semiconductor device is more and more higher, yet it is more and more littler that device volume becomes, and its demand to heat radiation is more and more higher, has become a more and more important problem.For satisfying this needs, the fan heat radiation, various radiating modes such as water-cooled auxiliary heat dissipation and heat pipe heat radiation are extensively used, and obtain certain radiating effect, but because of radiator and thermal source (semiconductor integrated device, as CPU) the contact interface out-of-flatness, generally be in contact with one another area less than 2%, a desirable contact interface is not arranged, fundamentally influence the effect of semiconductor device to the heat sink heat, so, traditional radiator by increase the higher thermal interfacial material of a conductive coefficient between radiator and semiconductor device to increase the exposure level of interface, improve the heat transfer effect between semiconductor device and radiator.
The traditional hot boundary material be Dispersion of Particles that conductive coefficient is higher in polymeric matrix to form composite material, as graphite, boron nitride, silica, aluminium oxide, silver or other metal etc.The heat conductivility of this kind material depends on the character of polymeric matrix.Be that the composite material of matrix is a liquid state when using because of it wherein with grease, phase-change material, can with the thermal source surface infiltration, so contact heat resistance is less, and be that the contact heat resistance of composite material of matrix is relatively large with silica gel or rubber.The common defects of such material is that whole material conductive coefficient is less, and representative value is 1W/mK, and this can not adapt to the demand of the raising of semiconductor integrated degree to heat radiation.Increase the heat conduction particle content of polymeric matrix, make and be in contact with one another between particle and the particle as far as possible, can increase the conductive coefficient of composite material integral body, therefore can reach 4-8W/mK as some special interface material, yet, when the heat conduction particle content of polymeric matrix increases to a certain degree, can make polymeric matrix lose performance originally, as grease meeting hardening, thereby effect of impregnation may variation, it is harder that rubber can become, thereby lose due pliability, and this all will make the thermal interfacial material performance reduce greatly.
For improving the performance of thermal interfacial material, improve conductive coefficient, various materials are by extensive experimentation.1991, Ijima found carbon nano-tube (specifically referring to Nature, 1991,354,56).To have draw ratio big because of carbon nano-tube, and length can be several thousand times of diameter; The intensity height be 100 times of steel, but weight has only the sixth of steel; The characteristic that toughness and elasticity are splendid, and carbon nano-tube has high thermal conductivity coefficient along its longitudinal direction, makes one of its thermal interfacial material that becomes tool potentiality.Delivering the article of a piece " carbon nano-tube is showing thermal conductance " by name in the AIP points out for " Z " font (10,10) carbon nano-tube at room temperature its conductive coefficient can reach 6600W/mK, specifically can consult document Phys.Rev.Lett, 2000,84,4613.
United States Patent (USP) the 6th, 407, No. 922 a kind of thermal interfacial materials that utilize carbon nano-tube heat conduction of announcement, it is carbon nano-tube to be mixed polymeric matrix strike up partnership, and makes thermal interfacial material by injection molded.Yet, the thermal interfacial material that this method is made, carbon nano-tube is lack of alignment in basis material, the uniformity that carbon nano-tube distributes in polymeric matrix is difficult to guarantee, and underuse the advantage of the vertical heat conduction of carbon nano-tube, thereby its heat conduction uniformity of prepared thermal interfacial material is not good, and conductive coefficient is not high.In addition, because carbon nano-tube is in horizontal direction heat conduction hardly, so can there be a heat conduction temperature gradient when heat transferred is to radiating fin: central temperature is higher, and temperature is lower all around.Even there is heat-conducting effect preferably at the center, but but poor all around than the heat-conducting effect at center, cause whole heat-conducting effect to reduce.
In view of this, providing a kind of can well contact with thermal source, and the radiator of tool excellent heat conductivity effect is real to be necessary.
[summary of the invention]
For solving the technical problem of prior art, first purpose of the present invention provides a kind of radiator of tool excellent heat conductivity effect.
Another object of the present invention provides a kind of preparation method of radiator of tool excellent heat conductivity effect.
For realizing first purpose of the present invention, the invention provides a radiator, it comprises a matrix, along extending away from the matrix direction, a carbon nano-tube film, this carbon nano-tube film are formed at relative another surface of matrix to a plurality of radiating fins from matrix one surface, and a heat conducting coating is formed at carbon nano-tube film, wherein, this carbon nano-tube film comprises a plurality of carbon nano-tube, and this carbon nano-tube is substantially parallel to each other and is basically perpendicular to another surface of heat sink.
For realizing another object of the present invention, the preparation method of radiator of the present invention may further comprise the steps:
One radiator is provided, and this radiator comprises a matrix and a plurality of radiating fin that extends from matrix one surface;
Another surface of polishing heat sink;
Deposited catalyst is in another surface of this heat sink
Feed carbon source gas, another superficial growth carbon nano-tube at heat sink forms a carbon nano-tube film;
Form a heat conducting coating on carbon nano-tube film.
Compare with existing radiator, radiator provided by the invention has following advantage: one, and carbon nano-tube is perpendicular to heat sink, make vertical thermal conduction characteristic of carbon nano-tube get performance to the limit, in addition, because carbon nano-tube is evenly distributed, make heat conduction consistent more; They are two years old, heat conducting coating is avoided the generation of temperature gradient when heat transferred is to radiating fin laterally preferable conductive coefficient also being arranged, thereby can evenly apace heat be sent to around the radiating fin, greatly improve the heat-conductive characteristic of radiator, improve heat conducting stability; Its three, the carbon nano-tube height can be controlled by controlling its growth time, thickness as thin as a wafer, according to Fourier heat conduction law, be equivalent to increase from another point of view the conductive coefficient of radiator, do not influence radiator volume and weight simultaneously, be beneficial to entire device the needs that develop to miniaturization are installed; Its four, the radiator that utilizes method of the present invention to make, the carbon nano-tube that can grow a various shape by the distribution shape of control catalyst is not subjected to the restriction of radiator shape.
[description of drawings]
Fig. 1 is the flow chart of preparation radiator of the present invention.
Fig. 2 is the schematic diagram that does not form the radiator of carbon nano-tube film of the present invention.
Fig. 3 is the schematic diagram that is formed with the radiator of carbon nano-tube film of the present invention.
Fig. 4 is the present invention is formed with the radiator of heat conducting coating on carbon nano-tube film a end view.
Fig. 5 is an Application Of Radiator schematic diagram of the present invention.
[embodiment]
The present invention is described in detail below in conjunction with the accompanying drawings and the specific embodiments.
See also Fig. 1, the preparation method of radiator of the present invention may further comprise the steps:
See also Fig. 2, Fig. 3 and Fig. 4, radiator 11 of the present invention, it comprises a long flat plate shape matrix 12, a plurality of sheet radiating fins 14 extend along the direction away from matrix 12 from matrix 12 1 surfaces, one carbon nano-tube film 18 is formed at relative another surface of matrix 12, be the contact bottom surface 16 of radiator 11, and a heat conducting coating 19 is formed on the carbon nano-tube film 18.Wherein, matrix 12 is one-body molded with radiating fin 14, and its material is aluminium or copper.A plurality of radiating fin 14 is parallel to each other and vertical with matrix 12.These radiator 11 central authorities are formed with a groove 15 radiating fin 14 are separated into two symmetrical regions, are used to accommodate a buckling device of radiator (figure does not show).Carbon nano-tube film 18 comprises a plurality of carbon nano-tube, and these a plurality of carbon nano-tube are parallel to each other substantially, and with radiator 11 to contact bottom surface 16 vertical substantially, the diameter of this carbon nano-tube is 3～40 nanometers, highly is 1～100 micron.Heat conducting coating 19 materials comprise: silver or zinc oxide, and the hybrid ceramic powder of boron nitride and aluminium oxide, wherein heat conducting coating 19 thickness are 1～50 micron, the particulate average diameter is less than 0.49 micron.
See also Fig. 5, be Application Of Radiator schematic diagram of the present invention.Radiator 11 of the present invention is placed on the electronic device 31, and the heat conducting coating 19 of radiator 11 contact bottom surfaces contacts with electronic device 31, by buckling device of radiator 33 radiator 11 is fixed in electronic device 31.The growth that method of the present invention makes has the radiator 31 of carbon nano-tube, the carbon nano-tube that its utilization is parallel to each other is as Heat Conduction Material, carbon nano-tube is arranged in order perpendicular to the contact bottom surface of radiator, makes full use of the axial thermal conductivity of carbon nano-tube, thereby has preferable conductive coefficient.In addition, heat can evenly be sent to around the radiating fin apace forming one deck heat conducting coating on the carbon nano-tube film, avoid the heat radiation non-uniform phenomenon that temperature gradient caused of generation when heat transferred is to radiating fin, greatly improve the heat-conductive characteristic of radiator, improve heat conducting stability, can be widely used in comprising central processing unit (CPU), power transistor, Video Graphics Array chip (VGA), radio frequency chip is in interior electronic device 31.
Claims (12)
1. a radiator, in order to dissipation from electronic devices to be provided, it comprises: a matrix, a plurality of radiating fins, this radiating fin extends along the direction away from matrix from matrix one surface, it is characterized in that, this radiator further comprises a carbon nano-tube film, this carbon nano-tube film is formed at relative another surface of matrix, and a heat conducting coating is formed on the carbon nano-tube film, wherein, this carbon nano-tube film comprises a plurality of carbon nano-tube, and this carbon nano-tube is substantially parallel to each other and is basically perpendicular to another surface of heat sink.
2. radiator as claimed in claim 1 is characterized in that, this heat sink and a plurality of radiating fin are one-body molded, and these a plurality of radiating fins are parallel to each other and perpendicular to heat sink.
3. radiator as claimed in claim 1 is characterized in that, the height of this carbon nano-tube is 1～100 micron, and diameter is 3～40 nanometers.
4. radiator as claimed in claim 1 is characterized in that, this heat conducting coating material comprises silver or zinc oxide, the hybrid ceramic powder of boron nitride and aluminium oxide.
5. radiator as claimed in claim 4 is characterized in that the thickness of this heat conducting coating is 1～50 micron, and the particles of material average diameter is less than 0.49 micron in the heat conducting coating.
6. the preparation method of a radiator, it may further comprise the steps:
One radiator is provided, and this radiator comprises a matrix and a plurality of radiating fin that extends from matrix one surface;
Another surface of polishing heat sink;
Deposited catalyst is in another surface of this heat sink;
Feed carbon source gas,, form carbon nano-tube film in another superficial growth carbon nano-tube of heat sink;
Form a heat conducting coating on carbon nano-tube film.
7. the preparation method of radiator as claimed in claim 6 is characterized in that, this finishing method comprises the cmp polishing.
8. the preparation method of radiator as claimed in claim 6 is characterized in that, another surface roughness of this heat sink is 5～10 dusts after the polishing.
9. the preparation method of radiator as claimed in claim 6 is characterized in that, this catalyst comprises iron, cobalt, nickel, rhodium or its alloy.
10. the preparation method of radiator as claimed in claim 6 is characterized in that, the method for deposited catalyst comprises vacuum thermal evaporation volatility process, electron-beam vapor deposition method.
11. the preparation method of radiator as claimed in claim 6 is characterized in that, the growing method of this carbon nano-tube comprises the low temperature chemical vapor deposition method.
12. the preparation method of radiator as claimed in claim 6 is characterized in that, the formation method of this heat conducting coating comprises direct rubbing method.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101123373A CN100405587C (en) | 2003-11-22 | 2003-11-22 | Radiator and its preparation method |
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| CNB2003101123373A CN100405587C (en) | 2003-11-22 | 2003-11-22 | Radiator and its preparation method |
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| CN1619800A CN1619800A (en) | 2005-05-25 |
| CN100405587C true CN100405587C (en) | 2008-07-23 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100572593C (en) * | 2005-09-13 | 2009-12-23 | 鸿富锦精密工业（深圳）有限公司 | A kind of preparation method of heat abstractor |
| CN101409962B (en) | 2007-10-10 | 2010-11-10 | 清华大学 | Surface heat light source and preparation method thereof |
| CN101400198B (en) | 2007-09-28 | 2010-09-29 | 北京富纳特创新科技有限公司 | Surface heating light source, preparation thereof and method for heat object application |
| CN101616512B (en) * | 2008-06-27 | 2015-09-30 | 清华大学 | Line heat source |
| CN101610613B (en) * | 2008-06-18 | 2011-09-28 | 清华大学 | Line heat source |
| CN103117356A (en) * | 2013-02-28 | 2013-05-22 | 华北电力大学 | Carbon nanometer tube array based chip radiating method |
| CN108736013B (en) * | 2018-05-30 | 2020-03-20 | 桑德新能源技术开发有限公司 | Battery module containing functional coating |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296740A (en) * | 1991-03-20 | 1994-03-22 | Fujitsu Limited | Method and apparatus for a semiconductor device having a radiation part |
| US6407922B1 (en) * | 2000-09-29 | 2002-06-18 | Intel Corporation | Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader |
| CN1358411A (en) * | 1999-06-23 | 2002-07-10 | 艾利森公司 | Gel structure for combined EMI shielding and thermal control of microelectronic assemblies |
| JP2003249613A (en) * | 2001-12-20 | 2003-09-05 | Intel Corp | Carbon nanotube thermal interface structure |
-
2003
- 2003-11-22 CN CNB2003101123373A patent/CN100405587C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296740A (en) * | 1991-03-20 | 1994-03-22 | Fujitsu Limited | Method and apparatus for a semiconductor device having a radiation part |
| CN1358411A (en) * | 1999-06-23 | 2002-07-10 | 艾利森公司 | Gel structure for combined EMI shielding and thermal control of microelectronic assemblies |
| US6407922B1 (en) * | 2000-09-29 | 2002-06-18 | Intel Corporation | Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader |
| JP2003249613A (en) * | 2001-12-20 | 2003-09-05 | Intel Corp | Carbon nanotube thermal interface structure |
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Granted publication date: 20080723 Termination date: 20171122 |