SU1282757A1 - METHOD OF MANUFACTURING THIN SILICON PLATES - Google Patents

METHOD OF MANUFACTURING THIN SILICON PLATES

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Publication number
SU1282757A1
SU1282757A1 SU3719121/25A SU3719121A SU1282757A1 SU 1282757 A1 SU1282757 A1 SU 1282757A1 SU 3719121/25 A SU3719121/25 A SU 3719121/25A SU 3719121 A SU3719121 A SU 3719121A SU 1282757 A1 SU1282757 A1 SU 1282757A1
Authority
SU
USSR - Soviet Union
Prior art keywords
ingot
doses
irradiated
thin silicon
manufacturing thin
Prior art date
Application number
SU3719121/25A
Other languages
Russian (ru)
Inventor
В.Ф. Реутов
Ш.Ш. Ибрагимов
Original Assignee
Институт Ядерной Физики Ан Казсср
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Ядерной Физики Ан Казсср filed Critical Институт Ядерной Физики Ан Казсср
Priority to SU3719121/25A priority Critical patent/SU1282757A1/en
Application granted granted Critical
Publication of SU1282757A1 publication Critical patent/SU1282757A1/en

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Abstract

1. Способ изготовления тонких пластин кремния, включающий их отделение от слитка путем формирования поверхности скола, отличающийся тем, что, с целью повышения производительности и воспроизводимости изготовления, поверхность скола формируют облучением слитка потоком легких ионов преимущественно водорода, дейтерия, гелия и нагревом слитка.2. Способ по п.1, отличающийся тем, что слиток облучают дозами по крайней мере 10смпри комнатной температуре.3. Способ по п.1, отличающийся тем, что слиток облучают дозами по крайней мере 10смпри температуре не менее 700 К.4. Способ по п.1, отличающийся тем, что слиток облучают дозами по крайней мере 10смпри температуре послерадиационного отжига не менее 840 К.1. A method of manufacturing silicon wafers, including their separation from the ingot by forming a cleavage surface, characterized in that, in order to improve production and reproducibility of manufacturing, the cleavage surface is formed by irradiating the ingot with a stream of light ions, mainly hydrogen, deuterium, helium and heating the ingot . The method according to claim 1, characterized in that the ingot is irradiated with doses of at least 10 cm at room temperature. The method according to claim 1, characterized in that the ingot is irradiated with doses of at least 10 cm at a temperature of at least 700 K.4. The method according to claim 1, characterized in that the ingot is irradiated with doses of at least 10 cm at a temperature of post-radiation annealing of at least 840 K.

SU3719121/25A 1983-12-30 1983-12-30 METHOD OF MANUFACTURING THIN SILICON PLATES SU1282757A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3719121/25A SU1282757A1 (en) 1983-12-30 1983-12-30 METHOD OF MANUFACTURING THIN SILICON PLATES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3719121/25A SU1282757A1 (en) 1983-12-30 1983-12-30 METHOD OF MANUFACTURING THIN SILICON PLATES

Publications (1)

Publication Number Publication Date
SU1282757A1 true SU1282757A1 (en) 2000-06-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
SU3719121/25A SU1282757A1 (en) 1983-12-30 1983-12-30 METHOD OF MANUFACTURING THIN SILICON PLATES

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SU (1) SU1282757A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067396B2 (en) 1996-05-15 2006-06-27 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
EP2019418A2 (en) 2007-01-29 2009-01-28 Silicon Genesis Corporation Method and structure using selected implant angles for manufacturing free standing films of materials
US7713369B2 (en) 2001-04-13 2010-05-11 Commissariat A L'energie Atomique Detachable substrate or detachable structure and method for the production thereof
US8124499B2 (en) 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US9257339B2 (en) 2012-05-04 2016-02-09 Silicon Genesis Corporation Techniques for forming optoelectronic devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067396B2 (en) 1996-05-15 2006-06-27 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US7498234B2 (en) 1996-05-15 2009-03-03 Commissariat A L'energie Atomique Method of producing a thin layer of semiconductor material
US7713369B2 (en) 2001-04-13 2010-05-11 Commissariat A L'energie Atomique Detachable substrate or detachable structure and method for the production thereof
US8124499B2 (en) 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
EP2019418A2 (en) 2007-01-29 2009-01-28 Silicon Genesis Corporation Method and structure using selected implant angles for manufacturing free standing films of materials
US9257339B2 (en) 2012-05-04 2016-02-09 Silicon Genesis Corporation Techniques for forming optoelectronic devices

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