SG11201604430YA - Bonding wire for semiconductor device - Google Patents
Bonding wire for semiconductor deviceInfo
- Publication number
- SG11201604430YA SG11201604430YA SG11201604430YA SG11201604430YA SG11201604430YA SG 11201604430Y A SG11201604430Y A SG 11201604430YA SG 11201604430Y A SG11201604430Y A SG 11201604430YA SG 11201604430Y A SG11201604430Y A SG 11201604430YA SG 11201604430Y A SG11201604430Y A SG 11201604430YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- bonding wire
- bonding
- wire
- semiconductor
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C22C5/04—Alloys based on a platinum group metal
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- C22C9/04—Alloys based on copper with zinc as the next major constituent
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2924/1025—Semiconducting materials
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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DE112015004422B4 (en) | 2015-06-15 | 2020-02-13 | Nippon Micrometal Corporation | Bond wire for semiconductor device |
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-
2015
- 2015-07-23 KR KR1020167012367A patent/KR101659254B1/en active IP Right Grant
- 2015-07-23 JP JP2015540380A patent/JP5893230B1/en active Active
- 2015-07-23 US US15/107,427 patent/US10468370B2/en active Active
- 2015-07-23 EP EP15866376.5A patent/EP3136435B1/en active Active
- 2015-07-23 WO PCT/JP2015/071002 patent/WO2017013796A1/en active Application Filing
- 2015-07-23 DE DE112015005172.4T patent/DE112015005172B4/en active Active
- 2015-07-23 SG SG11201604430YA patent/SG11201604430YA/en unknown
- 2015-07-23 CN CN201580002602.3A patent/CN107004610B/en active Active
- 2015-12-28 CN CN201580005634.9A patent/CN105981164B/en active Active
- 2015-12-28 US US15/116,145 patent/US9773748B2/en active Active
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- 2015-12-28 WO PCT/JP2015/086550 patent/WO2017013817A1/en active Application Filing
- 2015-12-28 KR KR1020167019958A patent/KR101742450B1/en active IP Right Grant
- 2015-12-28 SG SG11201606185QA patent/SG11201606185QA/en unknown
- 2015-12-28 JP JP2016507915A patent/JP5964534B1/en active Active
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- 2016-01-14 TW TW105101101A patent/TWI574279B/en active
- 2016-06-28 JP JP2016127446A patent/JP2017028262A/en active Pending
- 2016-07-22 PH PH12016501450A patent/PH12016501450A1/en unknown
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2019
- 2019-09-19 US US16/576,683 patent/US20200013748A1/en not_active Abandoned
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2020
- 2020-06-23 JP JP2020107511A patent/JP2020174185A/en active Pending
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