SG11201608819VA - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
SG11201608819VA
SG11201608819VA SG11201608819VA SG11201608819VA SG11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA SG 11201608819V A SG11201608819V A SG 11201608819VA
Authority
SG
Singapore
Prior art keywords
semiconductor device
bonding wire
bonding
wire
semiconductor
Prior art date
Application number
SG11201608819VA
Inventor
Tetsuya Oyamada
Tomohiro Uno
Hiroyuki Deai
Original Assignee
Nippon Steel & Sumikin Mat Co
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel & Sumikin Mat Co, Nippon Micrometal Corp filed Critical Nippon Steel & Sumikin Mat Co
Publication of SG11201608819VA publication Critical patent/SG11201608819VA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302Cu as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05624Aluminium [Al] as principal constituent
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    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
SG11201608819VA 2014-04-21 2015-04-21 Bonding wire for semiconductor device SG11201608819VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014087587 2014-04-21
PCT/JP2015/062040 WO2015163297A1 (en) 2014-04-21 2015-04-21 Bonding wire for semiconductor device

Publications (1)

Publication Number Publication Date
SG11201608819VA true SG11201608819VA (en) 2016-12-29

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ID=54332462

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608819VA SG11201608819VA (en) 2014-04-21 2015-04-21 Bonding wire for semiconductor device

Country Status (10)

Country Link
US (1) US10950570B2 (en)
EP (1) EP3136427B1 (en)
JP (3) JP6167227B2 (en)
KR (2) KR20180105740A (en)
CN (2) CN106233447A (en)
MY (1) MY168617A (en)
PH (1) PH12016502098B1 (en)
SG (1) SG11201608819VA (en)
TW (1) TWI605559B (en)
WO (1) WO2015163297A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6167227B2 (en) 2014-04-21 2017-07-19 新日鉄住金マテリアルズ株式会社 Bonding wires for semiconductor devices
MY162048A (en) 2015-06-15 2017-05-31 Nippon Micrometal Corp Bonding wire for semiconductor device
EP3136435B1 (en) 2015-07-23 2022-08-31 Nippon Micrometal Corporation Bonding wire for semiconductor device
JP6002300B1 (en) * 2015-09-02 2016-10-05 田中電子工業株式会社 Palladium (Pd) coated copper wire for ball bonding
TW202143414A (en) * 2015-12-15 2021-11-16 日商日鐵化學材料股份有限公司 Bonding wire for semiconductor device
SG10201600329SA (en) * 2016-01-15 2017-08-30 Heraeus Materials Singapore Pte Ltd Coated wire
WO2017221434A1 (en) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
JP6452661B2 (en) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 Bonding wires for semiconductor devices
JP7036838B2 (en) 2017-12-28 2022-03-15 日鉄マイクロメタル株式会社 Bonding wire for semiconductor devices
CN117529802A (en) * 2021-06-25 2024-02-06 日铁新材料股份有限公司 Bonding wire for semiconductor device
WO2022270049A1 (en) * 2021-06-25 2022-12-29 日鉄マイクロメタル株式会社 Bonding wire for semiconductor device
EP4174202A4 (en) * 2021-06-25 2024-05-29 Nippon Micrometal Corporation Bonding wire for semiconductor devices
KR20240026928A (en) * 2021-06-25 2024-02-29 닛데쓰마이크로메탈가부시키가이샤 Bonding wire for semiconductor devices
WO2022270050A1 (en) * 2021-06-25 2022-12-29 日鉄マイクロメタル株式会社 Bonding wire for semiconductor devices
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