NL187942C - Zenerdiode en werkwijze ter vervaardiging daarvan. - Google Patents

Zenerdiode en werkwijze ter vervaardiging daarvan.

Info

Publication number
NL187942C
NL187942C NLAANVRAGE8004651,A NL8004651A NL187942C NL 187942 C NL187942 C NL 187942C NL 8004651 A NL8004651 A NL 8004651A NL 187942 C NL187942 C NL 187942C
Authority
NL
Netherlands
Prior art keywords
zenerdiode
manufacture
Prior art date
Application number
NLAANVRAGE8004651,A
Other languages
English (en)
Other versions
NL187942B (nl
NL8004651A (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE8004651,A priority Critical patent/NL187942C/nl
Priority to US06/284,436 priority patent/US4429324A/en
Priority to DE3131991A priority patent/DE3131991C2/de
Priority to IT23532/81A priority patent/IT1139373B/it
Priority to GB8124868A priority patent/GB2082386B/en
Priority to FR8115820A priority patent/FR2488734B1/fr
Priority to JP56128656A priority patent/JPS5771186A/ja
Publication of NL8004651A publication Critical patent/NL8004651A/nl
Publication of NL187942B publication Critical patent/NL187942B/nl
Application granted granted Critical
Publication of NL187942C publication Critical patent/NL187942C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
NLAANVRAGE8004651,A 1980-08-18 1980-08-18 Zenerdiode en werkwijze ter vervaardiging daarvan. NL187942C (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NLAANVRAGE8004651,A NL187942C (nl) 1980-08-18 1980-08-18 Zenerdiode en werkwijze ter vervaardiging daarvan.
US06/284,436 US4429324A (en) 1980-08-18 1981-07-20 Zener diode and method of making the same
DE3131991A DE3131991C2 (de) 1980-08-18 1981-08-13 Verfahren zum Herstellen einer Zenerdiode
IT23532/81A IT1139373B (it) 1980-08-18 1981-08-14 Diodo zener e metodo di fabbricazione dello stesso
GB8124868A GB2082386B (en) 1980-08-18 1981-08-14 Zener diodes and their manufacture
FR8115820A FR2488734B1 (fr) 1980-08-18 1981-08-17 Diode zener et procede pour la fabriquer
JP56128656A JPS5771186A (en) 1980-08-18 1981-08-17 Zener diode and method of producing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8004651 1980-08-18
NLAANVRAGE8004651,A NL187942C (nl) 1980-08-18 1980-08-18 Zenerdiode en werkwijze ter vervaardiging daarvan.

Publications (3)

Publication Number Publication Date
NL8004651A NL8004651A (nl) 1982-03-16
NL187942B NL187942B (nl) 1991-09-16
NL187942C true NL187942C (nl) 1992-02-17

Family

ID=19835744

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8004651,A NL187942C (nl) 1980-08-18 1980-08-18 Zenerdiode en werkwijze ter vervaardiging daarvan.

Country Status (7)

Country Link
US (1) US4429324A (nl)
JP (1) JPS5771186A (nl)
DE (1) DE3131991C2 (nl)
FR (1) FR2488734B1 (nl)
GB (1) GB2082386B (nl)
IT (1) IT1139373B (nl)
NL (1) NL187942C (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631562A (en) * 1985-05-31 1986-12-23 Rca Corporation Zener diode structure
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
JP2561104B2 (ja) * 1987-12-11 1996-12-04 富士通株式会社 半導体基板の湿式処理装置
JPH0642555B2 (ja) * 1989-06-20 1994-06-01 株式会社東芝 半導体装置
DE4130247A1 (de) * 1991-09-12 1993-03-18 Bosch Gmbh Robert Halbleiteranordnung und verfahren zu deren herstellung
DE69228046T2 (de) * 1991-12-16 1999-07-01 Koninklijke Philips Electronics N.V., Eindhoven Zener-Diode mit Bezugs- und Schutzdiode
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
KR101369355B1 (ko) * 2006-07-31 2014-03-04 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 층 형성 동안에 형태를 제어하는 방법
US8029620B2 (en) * 2006-07-31 2011-10-04 Applied Materials, Inc. Methods of forming carbon-containing silicon epitaxial layers
WO2014050422A1 (ja) * 2012-09-27 2014-04-03 ローム株式会社 チップダイオードおよびその製造方法
US10468402B1 (en) * 2018-07-25 2019-11-05 Semiconductor Components Industries, Llc Trench diode and method of forming the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1522532A (fr) * 1967-03-17 1968-04-26 Europ Des Semiconducteurs Soc Perfectionnements aux diodes zener
DE2026683B2 (de) * 1970-06-01 1973-11-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Zenerdiode
FR2096859B2 (nl) * 1970-07-07 1973-11-16 Sescosem
DE2207654B2 (de) * 1972-02-18 1974-02-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellen einer Zenerdiode
JPS4999284A (nl) * 1973-01-27 1974-09-19
JPS511586A (ja) * 1974-06-26 1976-01-08 Toyo Kogyo Co Kariugomutokinzokutono setsuchakuhoho
US4030117A (en) * 1975-03-10 1977-06-14 International Telephone And Telegraph Corporation Zener diode
FR2454704A1 (fr) * 1979-04-20 1980-11-14 Thomson Csf Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts

Also Published As

Publication number Publication date
NL187942B (nl) 1991-09-16
IT1139373B (it) 1986-09-24
GB2082386A (en) 1982-03-03
DE3131991A1 (de) 1982-04-29
DE3131991C2 (de) 1987-01-02
FR2488734A1 (fr) 1982-02-19
GB2082386B (en) 1984-08-15
JPS5771186A (en) 1982-05-01
US4429324A (en) 1984-01-31
IT8123532A0 (it) 1981-08-14
FR2488734B1 (fr) 1986-08-29
NL8004651A (nl) 1982-03-16

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee