KR20140017249A - Package of semiconductor light emitting device with anti-reflection layer - Google Patents

Package of semiconductor light emitting device with anti-reflection layer Download PDF

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Publication number
KR20140017249A
KR20140017249A KR1020120083938A KR20120083938A KR20140017249A KR 20140017249 A KR20140017249 A KR 20140017249A KR 1020120083938 A KR1020120083938 A KR 1020120083938A KR 20120083938 A KR20120083938 A KR 20120083938A KR 20140017249 A KR20140017249 A KR 20140017249A
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South Korea
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light emitting
emitting device
semiconductor light
layer
refractive index
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KR1020120083938A
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Korean (ko)
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최원진
김두성
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일진엘이디(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a semiconductor light emitting device package which improves a transmission rate of light emitted to the outside and more specifically, to a semiconductor light emitting device package which improves a transmission rate by preventing light emitted from a light emitting device mounted inside a package from being reflected on the inner side through an anti-reflection layer formed on a light emitting surface which emits the light.

Description

Package of Semiconductor Light Emitting Device with Anti-Reflection Layer

The present invention relates to a semiconductor light emitting device package which improves the transmittance of light emitted to the outside, and more particularly, the light emitted from the light emitting device mounted on the inside of the anti-reflection layer formed on the light emitting surface for emitting light is reflected inside The present invention relates to a semiconductor light emitting device package in which the transmittance is improved so as not to.

Conventional semiconductor devices include, for example, GaN-based nitride semiconductor devices. The GaN-based nitride semiconductor light emitting devices are applied to light emitting devices of blue or green LEDs, high-speed switching and high output devices such as MESFETs and HEMTs, etc. It is becoming.

In particular, blue or green LED light-emitting devices have already been mass-produced, and global sales are increasing.

Recently, as the structure that emits white light by applying a phosphor to the LED light emitting device is known, the application range has been expanded to the lighting field that can replace the conventional lighting in addition to the simple light emitting display function. In addition, thanks to the development of these technologies, high brightness and high quality production are possible, and as an example, LED devices in the form of surface mounting devices are commercialized.

1 illustrates a surface mount semiconductor light emitting device package according to the prior art.

The light emitting device package has a housing body 10 having a cavity formed in the center thereof, and a predetermined surface of the housing body 10 is formed to be open so that light is easily radiated to the outside. In addition, the first electrode 20 and the second electrode 30, the semiconductor light emitting device chip 40 and the light emitting device chip 40 and the second electrode 30 mounted on the first electrode 20 The wiring 50 is connected. In addition, a filling part 60 is filled in the housing main body to encapsulate the light emitting device 40 and the wiring 50, and phosphors may be mixed in the molding part.

The light emitting device package according to the prior art as described above may implement a variety of colors, such as white, blue using the light emitting device and the phosphor. However, the light emitted from the light emitting device does not transmit all 70 from the surface of the molding portion to the outside, and part of the reflection 80 is a problem to return to the inside.

In this case, the transmittance of the light emitted from the light emitting device is lowered, which is a limit to the application in the field where high brightness illumination is required.

On the other hand, Japanese Patent Application Laid-Open No. 2006-261540 discloses a configuration in which a high refractive index film and a low refractive index film are alternately formed on a light emitting surface so as to form a multilayer film formed in a multi-layer. This is different from implementing a package of high brightness by preventing reflection in the entire wavelength region emitted to the outside.

Accordingly, there is a need for development of a semiconductor light emitting device package capable of increasing transmittance by minimizing reflection on an emission surface of light emitted to the outside.

Accordingly, the present inventors have conducted research and efforts to develop a semiconductor light emitting device package which minimizes reflection on the emission surface of light emitted to the outside. The present invention has been completed by discovering that excellent transmittance can be obtained, and in particular, the transmittance at a wavelength in the region of 400 to 800 nm is greatly increased to improve the luminance of blue or white light.

Accordingly, an object of the present invention is to provide a semiconductor light emitting device package of high brightness by forming a reflection prevention layer on the light emitting surface to minimize the reflection of light emitted from the light emitting device.

The semiconductor light emitting device package of the present invention for achieving the above object, the housing body; A semiconductor light emitting device chip mounted in the housing main body; And an antireflection layer formed on an upper surface of the molding part and a molding part filled in the housing body.

In the semiconductor light emitting device package of the present invention, the anti-reflection layer may be formed to a thickness of 90 to 320 nm as a single layer using a material having a refractive index of 1.2 to 1.54, and SiO x (1 ≦ x ≦ 3) or MgF It is characterized in that formed by two .

In addition, in the semiconductor light emitting device package of the present invention, the anti-reflection layer is characterized in that the first anti-reflection layer and the second anti-reflection layer. The refractive index of the material forming the first antireflection layer in contact with the molding part is greater than the refractive index of the material forming the second antireflection layer formed on the first antireflection layer.

More specifically, the first antireflection layer may be formed of a material having a refractive index of 1.6 to 2.5, and the second antireflection layer may be formed of a material having a refractive index of 1.2 to 1.54. In addition, the first anti-reflection layer is formed of TiO 2 , Nb 2 O 5 , Ta 2 O 5 , HfO 2 , MgO, ZrO 2 or SiON x , and the second anti-reflection layer is SiO x (1 ≦ x ≦ 3) Or MgF 2 .

In addition, the first anti-reflection layer is formed to a thickness of 10 ~ 300 nm, the second anti-reflection layer is characterized in that it is formed to a thickness of 50 ~ 300 nm.

In addition, the transmittance at 450 nm wavelength of light emitted to the outside in the semiconductor light emitting device package of the present invention is characterized by appearing more than 97%.

Since the semiconductor light emitting device package of the present invention can secure an excellent transmittance compared to a conventional light emitting device package by introducing an anti-reflection layer, it can implement a brighter white or blue light emitted, it can be widely applied in various fields such as lighting It is expected to be.

1 is a cross-sectional view of a conventional semiconductor light emitting device package according to the prior art.
2 is a cross-sectional view of a semiconductor light emitting device package according to a first embodiment of the present invention.
3 is a cross-sectional view of a semiconductor light emitting device package according to a second embodiment of the present invention.
Figure 4 shows the wavelength spectrum of the blue LED used in the embodiment of the present invention.
Figure 5 shows the wavelength spectrum of the white LED used in the embodiment of the present invention.
Figure 6 is a spectrum showing the transmittance for each wavelength of the blue LED package manufactured in Examples and Comparative Examples of the present invention.
7 is a spectrum showing the transmittance of each wavelength of the white LED package manufactured in Examples and Comparative Examples of the present invention.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described in detail below. However, it will be understood that the present invention is not limited to the embodiments disclosed herein but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, a semiconductor light emitting device package according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view of a semiconductor light emitting device package according to a first embodiment of the present invention.

As shown in FIG. 2, a semiconductor light emitting device package according to an exemplary embodiment of the present invention may include a housing body 100, a first electrode 110, a second electrode 120, and a semiconductor mounted on the first electrode. A light emitting device chip 130, a wiring 140 connecting the light emitting device chip 130 and the second electrode 120 to each other;

And a molding part 150 and an anti-reflection layer 160 filled in the housing main body to encapsulate the light emitting device chip 130 and the wiring 140.

The housing main body 100 has a cavity formed therein to serve as a case for mounting and protecting the light emitting device chip 130, and is generally made of an insulator, and may be usually made of thermoplastic resin or thermosetting resin. In addition, the housing main body 100 is preferably formed by inclining a cross section having an upper portion wider than the lower portion of the cavity in order to more easily emit light to the outside, and the light emitted from the light emitting device chip by coating a reflective film on the inner circumference. More preferably configured to reflect upwardly.

The semiconductor light emitting device chip 130 is mounted so that its light emitting surface faces the anti-reflection layer 160 of the package, so that light emitted is emitted to the outside of the package. In this case, only one semiconductor light emitting device chip may be mounted, but two or more semiconductor light emitting device chips emitting light having different wavelengths may be mounted. In particular, when a plurality of semiconductor light emitting device chips emitting light of blue, red, and green wavelengths are respectively mounted, white light may be realized without using a separate phosphor.

In addition, the anti-reflection layer 160, which is a main component of the present invention, is formed on the upper surface of the molding part and serves to prevent reflection of light emitted from the light emitting device chip.

When light passes between two dissimilar materials, reflection occurs. In order to minimize this, a layer of a material having a value between the refractive index values of the heterogeneous material may be interposed between the heterogeneous materials. At this time, the thickness t of the interlayer formed between the dissimilar materials is represented by Equation 1 below.

Figure pat00001

In Equation 1, m is a positive integer, n (the interlayer ) is the refractive index of the interlayer, and λ is a wavelength, usually based on 550 nm. The thickness t may be expressed as a quarter wavelength optical thickness (QWOT).

When the anti-reflection layer 160 is formed as a single layer, the antireflection layer 160 is preferably formed of a material having a refractive index of 1.2 to 1.54, and more preferably formed of a material having a range of 1.3 to 1.46. If the refractive index is less than 1.2, the light emitted from the light emitting device chip generates a lot of reflection at the interface between the molding part and the antireflection layer, thereby preventing the escape of light from the molding part. When the refractive index is higher than 1.54, the interface between the antireflection layer and the external air interface There is a problem in that there is a lot of reflection in the light back to the molding part.

When the anti-reflection layer 160 is formed as a single layer, the anti-reflection layer 160 is preferably formed to a thickness of 90 to 320 nm, more preferably 150 to 250 nm.

The material constituting the anti-reflection layer 160 is not limited as long as the material satisfies the range of the refractive index, SiO x (1≤x≤3), MgF 2 By . That is, when the refractive index of the outside air is approximately 1 and the refractive index of the molding part 150 is approximately 1.54, the refractive index of the most antireflection layer is √1.54, and a value of about 1.24 can be expected. However, since it is difficult to find a material having such a refractive index, it is most preferable to use MgF 2 having a refractive index of 1.38.

Meanwhile, the molding part 150 is filled in the housing main body 100 to protect the light emitting device chip 130 and the wiring 140, and to uniformly space the first electrode 110 and the second electrode 120 spaced apart from each other. It is used to maintain the gap, it is usually formed of a transparent material such as epoxy resin or silicone resin, but may be formed of an opaque resin enough to transmit light depending on the purpose of the light emitting device package. In addition, the molding unit 150 may be used by mixing one or more phosphors.

3 is a cross-sectional view of a semiconductor light emitting device package according to a second embodiment of the present invention.

In the semiconductor light emitting device package according to the second embodiment, the anti-reflection layer 160 is formed of a double layer of the first anti-reflection layer 161 and the second anti-reflection layer 162.

The first antireflection layer and the second antireflection layer may be formed of materials having different refractive indices among materials having a refractive index of 1.2 to 2.5, and may be formed of a material having a relatively low refractive index and a group having a relatively high refractive index. At this time, the index of the low or high index of the refractive index may be represented by the refractive index 1.54 ~ 1.6. If the refractive index is less than 1.2, the light emitted from the light emitting device chip may have a large amount of reflection at the interface between the molding part and the antireflection layer. If the refractive index is greater than 2.5, the antireflection effect may be lowered. In this case, the refractive index of the material forming the first antireflection layer 161 in contact with the molding part is preferably greater than the refractive index of the material forming the second antireflection layer 162 formed on the first antireflection layer. If the refractive index of the material forming the second anti-reflection layer 162 is greater than that of the second anti-reflection layer 162 and the outer boundary may occur.

Accordingly, the first antireflection layer 161 may be formed of a material having a refractive index of 1.6 to 2.5, and the second antireflection layer 162 may be formed of a material having a refractive index of 1.2 to 1.54. Specifically, the second anti-reflection layer 162 is SiO x (1 ≦ x ≦ 3), MgF 2 Preferably, the first anti-reflective layer 161 is formed of a high refractive index material such as TiO 2 , Nb 2 O 5 , Ta 2 O 5 , HfO 2 , MgO, ZrO 2, or SiON x . Preferably, but not limited to. More preferably, when stacked in the order of the second anti-reflection layer 162 on the first anti-reflection layer 161, it is advantageous to exhibit a refractive index as shown in Equation 2 below.

Figure pat00002

In Equation 2, n 1 represents the refractive index of the first antireflection layer, and n 2 represents the refractive index of the second antireflection layer. Therefore, when the second antireflection layer uses MgF 2 having a refractive index of 1.38, it is preferable to form the first antireflection layer with a material having a refractive index of approximately 1.7.

In addition, the difference in refractive index between the material constituting the first anti-reflection layer 161 and the material constituting the second anti-reflection layer 162 is preferably in the range of 0.01 to 0.30, more preferably in the range of 0.05 to 0.20. .

On the other hand, the first anti-reflection layer 161 and the second anti-reflection layer 162, as shown in Equation 3 below, it is preferable to adjust the thickness to be (2m-1) times the quarter wavelength optical thickness (QWOT) Do.

Figure pat00003

In Equation 3, m is a positive integer, n 1 represents the refractive index of the first anti-reflection layer, n 2 represents the refractive index of the second anti-reflection layer.

More specifically, the first anti-reflection layer is preferably formed to a thickness of 10 ~ 300 nm, more preferably formed of a thickness of 50 ~ 250 nm. In addition, the second anti-reflection layer 162 may be formed to a thickness of 50 to 300 nm, and more preferably to a thickness of 100 to 250 nm. In addition, considering that the refractive index of the material forming the first antireflection layer 161 is greater than the refractive index of the material forming the second antireflection layer 162 formed on the first antireflection layer, the thickness of the first antireflection layer Is more advantageously formed thinner than the thickness of the second antireflection layer.

Meanwhile, a method of manufacturing the semiconductor light emitting device package of the present invention will be briefly described.

The first electrode 110 and the second electrode 120 are formed on the inner surface of the housing main body 100, which may be manufactured through insert molding, or the like, and separately manufactured on the first electrode. The semiconductor light emitting device chip 130 is mounted. The semiconductor light emitting device chip 13 and the second electrode 120 are formed by connecting the wiring 140 through a wire bonding process.

Next, an epoxy resin or a silicone resin is prepared in a liquid state in the housing main body 100, and a predetermined amount is injected and cured to form the molding part 150.

Thereafter, an anti-reflection layer 160 is formed on the outer surface of the molding unit 150, and the anti-reflection layer 160 may be formed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, a sputtering method, a MOCVD method, or an e-beam evaporation method. It can be formed by the method). For example, the SiO 2 antireflective layer may be formed by reactive sputtering using Ar as a carrier gas and using Si target and O 2 , and may also be formed by another example, e-beam evaporation. The anti-reflection film may be deposited on the molding part by sublimation of the SiO 2 or MgF 2 source.

As described above, the semiconductor light emitting device package of the present invention may prevent the light emitted from the light emitting device from being reflected inside to emit most of the light. In particular, when the anti-reflection layer of the double layer is formed as shown in FIG. Very high transmittance can be achieved in the 400-800 nm wavelength band. The semiconductor light emitting device package of the present invention may exhibit a transmittance of 96% or more at a wavelength of 450 nm, and more preferably 99% or more.

Hereinafter, the light emitting device package of the present invention will be described in more detail with reference to the following examples.

Example  One : Monolayer  Blue with antireflective layer LED  package

As shown in FIG. 4, a blue LED chip having an emission wavelength spectrum was mounted on the housing body, and an epoxy resin was filled therein to form a molding part. Then, a SiO 2 antireflection film was formed on the surface of the molding part to have a thickness of 94.2 nm to form a final LED. The package was prepared.

Example  2 : Monolayer  Blue with antireflective layer LED  package

The same LED package as in Example 1 was manufactured except that an MgF 2 anti-reflection film was formed on the surface of the molding part to have a thickness of 99.4 nm.

Example  3: Bilayer  Blue with antireflective layer LED  package

Except for forming a SiO 2 first anti-reflection film on the surface of the molding portion to a thickness of 94.2 nm, and forming a MgF 2 second anti-reflection film on the top of the thickness of 198.7 nm to provide a double anti-reflection film The same LED package as 1 was prepared.

Comparative Example  1: blue without an antireflection layer LED  package

As shown in FIG. 4, a blue LED chip having an emission wavelength spectrum was mounted on a housing main body, and an LED package as shown in FIG. 1 was manufactured in a state in which a molding part was formed by filling an epoxy resin therein.

Example  4 : Monolayer  White with antireflective layer LED  package

As shown in FIG. 5, a white LED chip having an emission wavelength spectrum is mounted on a housing main body, an epoxy resin is filled therein to form a molding part, and then a SiO 2 antireflection film is formed on the surface of the molding part to have a thickness of 282.5 nm, resulting in a final LED. The package was prepared.

Example  5: Monolayer  White with antireflective layer LED  package

The same LED package as in Example 4 was manufactured except that an MgF 2 antireflection film was formed on the surface of the molding part to have a thickness of 298 nm.

Example  6: Bilayer  White with antireflective layer LED  package

Except for forming a SiO 2 first anti-reflection film on the surface of the molding portion to a thickness of 188.4 nm and forming a MgF 2 second anti-reflection film at 99.4 nm on the upper portion thereof to provide a double anti-reflection film. The same LED package was made.

Comparative Example  2: white which does not contain an antireflection layer LED  package

As shown in FIG. 5, a white LED chip having an emission wavelength spectrum was mounted on a housing main body, and an LED package as shown in FIG. 1 was manufactured in a state in which a molding part was formed by filling an epoxy resin therein.

Experimental Example  : LED  Package transmittance measurement

The transmittance of the package was measured by comparing the intensity at each wavelength of light emitted from the package of Examples and Comparative Examples with the intensity of light emitted from the LED chip, and the results are shown in Tables 1 to 2 and FIGS. 6 to 7. .

450nm transmittance (%) Example 1 97.5 Example 2 97.1 Example 3 99.9 Comparative Example 1 95.9

Transmittance (%) 450 nm 550 nm 650 nm Example 4 97.5 97.7 97.7 Example 5 97.5 97.5 97.5 Example 6 99.4 97.2 97.8 Comparative Example 2 95.9 95.9 95.9

As shown in Table 1, the package having a blue LED chip showing a peak at 450 nm exhibited excellent transmittance at 450 nm compared to Comparative Example 1 without the antireflection layer, and the antireflection layer was formed of a double layer. It was confirmed that Example 3 exhibits a high transmittance of 99.9%.

In addition, as shown in Table 2, even in the case of a package in which a white LED chip is mounted, the transmittance was excellent in the entire wavelength range compared to Comparative Example 2 without the anti-reflection layer, and in particular, the transmittance was more excellent in the 450 nm wavelength band. It was confirmed that it was shown.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. . Accordingly, the true scope of the present invention should be determined by the following claims.

10, 100: housing body
20, 110: first electrode
30, 120: second electrode
40, 130: light emitting device chip
50, 140: wiring
60, 150 molding part
70: light emitted to the outside
80: light reflected inside
160: antireflection layer
161: first antireflection layer
162: second antireflection layer

Claims (12)

A housing body;
A semiconductor light emitting device chip mounted in the housing main body;
A molding part filled in the housing body;
And a reflection prevention layer formed on an upper surface of the molding part.
The method of claim 1,
The anti-reflection layer is a semiconductor light emitting device package, characterized in that consisting of a single layer using a material having a refractive index of 1.2 ~ 1.54.
The method of claim 1,
The anti-reflection layer is a semiconductor light emitting device package, characterized in that formed of SiO x (1≤x≤3) or MgF 2 .
The method of claim 1,
The anti-reflection layer is a semiconductor light emitting device package, characterized in that formed in a thickness of 90 ~ 320 nm.
The method of claim 1,
The anti-reflection layer is a semiconductor light emitting device package, characterized in that consisting of a first anti-reflection layer and a second anti-reflection layer.
6. The method of claim 5,
And a refractive index of the material forming the first antireflection layer in contact with the molding part is greater than the refractive index of the material forming the second antireflection layer formed on the first antireflection layer.
The method according to claim 6,
The first antireflection layer is formed of a material having a refractive index of 1.6 to 2.5, the second antireflection layer is a semiconductor light emitting device package, characterized in that formed of a material of the refractive index 1.2 ~ 1.54.
The method according to claim 6,
The first antireflection layer is formed of TiO 2 , Nb 2 O 5 , Ta 2 O 5 , HfO 2 , MgO, ZrO 2 or SiON x , and the second antireflection layer is SiO x (1 ≦ x ≦ 3) or MgF The semiconductor light emitting device package, characterized in that formed by two .
6. The method of claim 5,
The first antireflection layer is formed of a thickness of 10 ~ 300 nm, the second antireflection layer is a semiconductor light emitting device package, characterized in that formed in a thickness of 50 ~ 300 nm.
The method of claim 1,
The molding unit comprises a semiconductor light emitting device package, characterized in that at least one phosphor.
The method of claim 1,
A semiconductor light emitting device package, characterized in that two or more semiconductor light emitting device chips for emitting light of different wavelengths are mounted inside a housing body.
The method according to any one of claims 1 to 11,
The semiconductor light emitting device package, characterized in that the transmittance at 450 nm wavelength of the light emitted to the outside is 97% or more.
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KR20170030713A (en) * 2015-09-09 2017-03-20 주식회사 세미콘라이트 Method of manufacturing semiconductor light emitting device
CN107726235A (en) * 2017-09-25 2018-02-23 焦荣 A kind of LED white light sources device
KR20200032598A (en) * 2018-09-18 2020-03-26 삼성전자주식회사 A light-generating device
CN112086549A (en) * 2019-06-13 2020-12-15 光宝光电(常州)有限公司 Light emitting diode packaging structure
WO2023277579A1 (en) * 2021-06-29 2023-01-05 대주전자재료 주식회사 Wavelength conversion member and light-emitting device comprising same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170030713A (en) * 2015-09-09 2017-03-20 주식회사 세미콘라이트 Method of manufacturing semiconductor light emitting device
CN107726235A (en) * 2017-09-25 2018-02-23 焦荣 A kind of LED white light sources device
CN107726235B (en) * 2017-09-25 2020-11-10 新沂市中振电器科技有限公司 LED white light source device
KR20200032598A (en) * 2018-09-18 2020-03-26 삼성전자주식회사 A light-generating device
CN112086549A (en) * 2019-06-13 2020-12-15 光宝光电(常州)有限公司 Light emitting diode packaging structure
US11462524B2 (en) 2019-06-13 2022-10-04 Lite-On Opto Technology (Changzhou) Co., Ltd. Light emitting structure
WO2023277579A1 (en) * 2021-06-29 2023-01-05 대주전자재료 주식회사 Wavelength conversion member and light-emitting device comprising same

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