KR102636473B1 - Semiconductor processing equipment and magnetron sputtering equipment - Google Patents

Abstract

The present invention provides a semiconductor processing device. The semiconductor processing apparatus includes a chamber, a plurality of pillars disposed in the chamber, and a base for supporting the plurality of pillars. The plurality of fillers are used to transport the workpiece. The semiconductor processing device includes a detection device. The detection device is coupled to at least two of the plurality of fillers, and is used to determine the state of the workpiece by selecting and detecting any two fillers among the at least two fillers coupled to the detection device. The present invention further provides a magnetron sputtering device. Embodiments of the present invention solve the problem that occurs in the prior art because the state of the workpiece (eg, tray) cannot be detected in real time.

Description

Semiconductor processing equipment and magnetron sputtering equipment

The present invention relates to devices, and more particularly to semiconductor processing devices and magnetron sputtering devices.

Conventionally, when performing a thin film deposition process on a wafer, the thin film deposition can be completed by transferring the wafer along with the tray and the transported wafer into the reaction chamber of a plasma system and applying a plasma shock. However, since the tray is not a disposable consumable material, it can easily break if used multiple times, and there is even a possibility of the disk breaking. However, the current plasma system does not have a device or function that can detect the tray status in real time, so the tray status cannot be checked immediately. This may indirectly damage the wafer placed on the tray or other components in the plasma system.

The present invention provides a semiconductor processing device and a related magnetron sputtering device to solve problems in the prior art, such as problems arising from the inability to detect the status of a workpiece (e.g., a tray) in real time.

One embodiment of the present invention discloses a semiconductor processing apparatus. The semiconductor processing apparatus includes a chamber, a plurality of pillars disposed in the chamber, and a base for supporting the plurality of pillars. The plurality of fillers are used to transport the workpiece. The semiconductor processing device includes a detection device. The detection device is coupled to at least two fillers among the plurality of fillers, and is used to determine the state of the workpiece by selecting and detecting any two fillers among the at least two fillers coupled to the detection device.

One embodiment of the present invention discloses a semiconductor processing apparatus. The semiconductor processing apparatus includes a chamber and a plurality of fillers disposed in the chamber. The plurality of fillers are used to transport the workpiece. The semiconductor processing apparatus further includes a detection device. The detection device includes a sensing circuit and a processing circuit. The sensing circuit is connected to at least two of the plurality of pillars. The sensing circuit is used to sense electrical characteristics between any two of the at least two pillars connected to the sensing circuit. The processing circuit is coupled to the sensing circuit. The processing circuit is used to notify the user of the semiconductor processing equipment of the electrical characteristics detected by the sensing circuit.

One embodiment of the present invention discloses a magnetron sputtering device. The magnetron sputtering device includes a chamber, a base disposed in the chamber, a plurality of fillers, a target, a magnetron, and a detection device disposed in the chamber. The plurality of fillers are used to support the workpiece. The base is used to support a plurality of pillars. The base drives the plurality of pillars to perform a lifting movement. The target and the magnetron are disposed within the chamber and are used to perform thin film deposition on the workpiece. The detection device is coupled to at least two fillers among the plurality of fillers, and is used to determine the state of the workpiece by selecting and detecting any two fillers among the at least two fillers coupled to the detection device.

1 is a cross-sectional view of a semiconductor processing device according to an embodiment of the present invention.
Figure 2 is a plan view of a pillar according to an embodiment of the present invention standing on a base.
Figure 3 is a schematic diagram of a detection device according to an embodiment of the present invention.
4A to 4D are schematic diagrams of a detection device detecting a tray according to an embodiment of the present invention.
5A and 5B are operational diagrams of a processing circuit according to an embodiment of the present invention.
Figures 6a to 6c are schematic diagrams of a pillar according to an embodiment of the present invention connected to a sensing circuit through a connection line.
Figures 7a and 7b are operation diagrams of a connection line connection method according to an embodiment of the present invention.
Figures 8a and 8b are schematic diagrams of a connection line and filler connection method according to an embodiment of the present invention.
Figure 9 is a cross-sectional view of a semiconductor processing device according to another embodiment of the present invention.
Figure 10 is a schematic diagram of a detection device according to another embodiment of the present invention.
11A to 11B are schematic diagrams of a detection device detecting a tray according to another embodiment of the present invention.
11C to 11D are schematic diagrams of a detection device detecting a tray according to another embodiment of the present invention.
Figure 12 is a side view of a pillar according to another embodiment of the present invention standing on a base.

Various embodiments or examples are provided below, which can be used to implement different features of the disclosure. The specific examples of components and arrangements described below are used to simplify the disclosure herein. This description is only illustrative and does not limit the disclosure in the present invention. For example, in the description below, forming a first feature on or above a second feature may include certain embodiments in which the first feature and the second feature are in direct contact with each other. Additionally, additional components may be located between the above-described first and second features, and may include specific embodiments in which the first and second features are not in direct contact. Additionally, the content disclosed in the present invention may repeatedly use component codes and/or symbols in multiple embodiments. This use of repetition is for brevity and clarity and does not, by itself, indicate a relationship between the different embodiments and/or configuration states discussed.

Additionally, spatially relative terminology used herein, such as "below," "below," "lower than," "on," "above," and similar terms, refer to a single configuration shown in the drawings. It may be intended to easily explain the relative relationship between an element or feature and one or more components or features. The original meaning of this spatially relative term further includes various other orientations of the device in use or operation in addition to the orientation shown in the drawings. The equipment can be mounted in different orientations (for example, rotated 90 degrees or positioned in other orientations). Such spatially relative descriptive vocabulary must be interpreted correspondingly.

The numerical ranges and parameters used to determine the relatively broad scope of the present application are approximate, but relevant values are shown here as accurately as possible in specific embodiments. However, arbitrary numbers by their very nature inevitably include standard deviations due to individual test methods. “About” here typically means that the actual value is within ±10%, 5%, 1%, or 0.5% of a specific value or range. Or “about” means that the actual value is within the allowable standard error of the average value, and is determined according to the judgment of a person skilled in the art to which this application belongs. Except in experimental examples or unless otherwise clearly stated, all ranges, quantities, values and percentages used herein (e.g., material dosages, lengths of time, temperatures, operating conditions, quantity ratios and other matters used in the description) Similar things) are all modified with “about.” Accordingly, unless otherwise specified, all numerical parameters disclosed in this specification and the appended patent scope are approximate and may vary depending on demand. At a minimum, these numerical parameters should be understood as the numbers obtained by applying the indicated number of significant digits and common rounding techniques. Numerical ranges are expressed herein as extending from one endpoint to another or as intervening between two endpoints, and unless otherwise specified, all numerical ranges described herein are inclusive of the endpoints.

When performing a thin film deposition process on a wafer, the wafer is placed on a tray and transported together to the reaction chamber. Taking a plasma processing device as an example, plasma shock is applied to the wafer to complete thin film deposition. However, since the tray is not a disposable consumable material, the tray is easily damaged and the disk is likely to break when repeatedly subjected to baking, wafer transport, and plasma shock in a high-temperature environment. Currently, there is no detection device to detect the status of the tray, so the system cannot immediately notify to stop operation after the tray is damaged or broken. This can cause sputter coating to other components in the system or cause irreversible damage, such as when the manipulator collides with a damaged tray when picking up a wafer.

In order to solve the above-described problems, the present invention provides a semiconductor processing apparatus. This allows real-time detection of whether workpiece (e.g. tray) damage has occurred. Additionally, the semiconductor processing device provided by the present invention can detect whether a workpiece (for example, a tray) is placed on a plurality of pillars, and whether it is placed accurately. This prevents the system from starting a process operation if the workpiece (e.g. tray) is not mounted or if the workpiece (e.g. tray) is tilted.

1 is a cross-sectional view of a semiconductor processing apparatus 1 according to an embodiment of the present invention. Referring to FIG. 1 , the semiconductor processing device 1 may be a device used to perform semiconductor processes such as thin film deposition and etching on a workpiece (eg, a wafer). In this embodiment, the structure of the semiconductor processing device 1 will be described in detail by taking the case where the semiconductor processing device 1 is a magnetron sputtering device as an example.

Specifically, the semiconductor processing apparatus 1 includes a chamber 10, a base 11 disposed in the chamber 10, and a plurality of pillars (for example, three pillars 13, 14, and 15 shown in FIG. 1). , including a magnetron 16, a target 17, an insulating ring 18, a cover ring 19, and a detection device 20. Here, the three pillars 13, 14, and 15 are installed spaced apart on the base 11 along the circumferential direction of the base 11 and are used to support the workpiece 12 together. In this embodiment, the workpiece 12 is a tray for transporting a workpiece (eg, a wafer). Additionally, the base 11 may be provided with a heating device (not shown) for heating the workpiece 12.

If the three pillars (13, 14, 15) and the base (11) are all made of a conductive material, the three pillars (13, 14, 15) each have three connecting members (13', 14', 15') It can be connected to the base 11 through. Three connecting members (13', 14', 15') are used to respectively secure the three pillars (13, 14, 15) on the base (11), and all three are electrically connected to the base (11). It is insulated. In one embodiment, the material used for the three connecting members 13', 14', and 15' includes at least an insulating material.

The target 17 is installed at the top of the chamber 10 and is located above the base 11. The magnetron 16 is installed above the target 17. The target 17 and the magnetron 16 are used to implement a thin film deposition process on a workpiece (e.g. a wafer) on the workpiece 12 . For example, the semiconductor processing apparatus 1 adopts the method of physical vapor deposition to deposit a thin film on a workpiece (eg, a wafer). During the thin film deposition process, the chamber 10 is filled with a process gas, and a negative voltage is applied to the target 17 using the excitation power of the semiconductor processing device 1. This excites the process gas to form a plasma and begins to impact the target 17 to machine the workpiece (e.g. tray) 12.

The base 11 can be raised and lowered, and can be raised to a process position to perform a process, or lowered to a loading and unloading position to perform a pick-and-place operation of the workpiece 12. The cover ring 19 is carried by the insulating ring 18 when the base 11 is lowered from the process position. When the base 11 rises to the process position, the base 11 lifts the cover ring 19 and separates it from the insulating ring 18. At this time, the cover ring 19 uses its own gravity to press the edge area of the workpiece 12.

The detection device 20 may be combined with at least two of the three pillars 13, 14, and 15. Additionally, the state of the tray 12 can be determined by selecting and detecting any two of the three combined fillers 13, 14, and 15. In the present invention, “coupling” means indirect physical contact between two objects. “Connection” means direct physical contact between two objects. Meanwhile, an "electrical connection" means that there is an electrical path between two objects, allowing power to be transferred between them. In the embodiment of FIG. 1, the case where the detection device 20 is coupled to the pillars 13 and 15 through connection lines within the two pillars 13 and 15 will be described as an example. The configuration of the connection lines in the pillars 13 and 15 and the connection method for connecting them to the detection device 20 will be described in the following paragraphs.

Those skilled in the art will understand that the semiconductor processing apparatus 1 further includes essential components used to process a workpiece (eg, a wafer). However, for the sake of brevity of the drawings, only components related to the spirit of the present invention are shown in FIG. 1.

When processing a workpiece (e.g. a wafer), the manipulator transfers the workpiece (e.g. tray) 12 into the chamber 10 through a transfer opening on the chamber 10, and the workpiece (e.g. tray) 12 ) is placed on the pillars (13, 14, 15). At this time, the workpiece (e.g. tray) 12 and the fillers 13, 14, and 15 are all in contact with each other. The base 11 is then raised simultaneously with the fillers 13 , 14 , 15 and the workpiece (eg tray) 12 . That is, it moves in a direction close to the magnetron 16 and the target 17. In the process of raising, the workpiece (e.g. tray) 12 supports the cover ring 19 and separates it from the insulating ring 18. After the base 11 has been raised to the processing position, machining of the workpiece on the workpiece (e.g. tray) 12 can begin.

Additionally, the detection device 20 is coupled to the pillars 13 and 15 through connection lines within the pillars 13 and 15. After the workpiece (e.g. tray) 12 is placed on the three pillars 13, 14, and 15 by the manipulator, it is always maintained in contact with the three pillars 13, 14, and 15. This ensures that the detection device 20 is always electrically connected to the workpiece (e.g. tray) 12 via the pillars 13, 15. Therefore, when the workpiece (e.g., tray) 12 is placed on the pillars 13, 14, and 15, when the workpiece (e.g., tray) 12 transports and raises the workpiece (e.g., wafer) , or when processing a workpiece (eg, a wafer), the detection device 20 can detect the state of the workpiece (eg, a tray) 12 .

Figure 2 is a plan view of the pillars 13, 14, and 15 standing on the base 11 according to an embodiment of the present invention. Referring to FIG. 2, in this embodiment, the base 11 and the workpiece (eg, tray) 12 are generally similar in shape. The three pillars 13, 14, and 15 are distributed on a circumference with the center of the base 11 as the center of the circle so as to be relatively symmetrical to the center of the base 11. Additionally, the standard position of the workpiece (e.g. tray) 12 on the pillar is the center of the workpiece (e.g. tray) 12 when the manipulator places the workpiece (e.g. tray) 12 on the pillar. Aligned with the center of this base 11, the three pillars 13, 14, 15 must meet the requirements to ensure that they can stably support the workpiece (e.g. tray) 12.

Note that in this embodiment, there are three fillers, but in actual applications, the quantity of fillers may be set to four, five, or six or more depending on specific demand. Additionally, the shapes of the base and tray and the distribution method of the filler can be freely set. As long as the effect of stably supporting the workpiece (for example, tray) 12 can be achieved, it falls within the scope of the present invention.

Figure 3 is a schematic diagram of a detection device 20 according to an embodiment of the present invention. As shown in Figure 3, the detection device 20 includes a sensing circuit 21 and a processing circuit 22. Here, the sensing circuit 21 is connected between the two pillars 13 and 15 and is used to sense the electrical characteristics between the two pillars 13 and 15. Specifically, the sensing circuit 21 includes a first sensing stage (T1) and a second sensing stage (T2). Here, the first sensing stage (T1) is coupled to the pillar (13) through the connecting line (L1), and the second sensing stage (T2) is connected to the pillar (15) through the connecting line (L2). The processing circuit 22 is coupled to the sensing circuit 21 and is used to determine the state of the workpiece (e.g. tray) 12 according to the electrical characteristics sensed by the sensing circuit 21.

4A to 4D are schematic diagrams of a detection device 20 detecting a workpiece (eg, a tray) 12 according to an embodiment of the present invention. As shown in Figure 4a, the sensing circuit 21 is connected to the two pillars 13 and 15. When the manipulator places a workpiece (e.g. a tray) 12 on the three pillars 13, 14, 15, the sensing circuit 21 detects the workpiece (e.g. a tray) through the two pillars 13, 15. It is electrically connected to the tray (12). When the workpiece (e.g. tray) 12 is completely and normally mounted on the three pillars, an electrical path 4 is formed between the two pillars 13 and 15 through the workpiece (e.g. tray) 12. form 4A to 4D, if the workpiece (e.g. tray) 12 is broken, tilted, or there is no workpiece (e.g. tray) 12 on the filler, the two fillers 13 , 15), the electrical passage (4) does not exist. Based on this, it is possible to determine whether the state of the workpiece (e.g. tray) 12 is normal by detecting the electrical characteristics between the two fillers 13 and 15 in real time using the sensing circuit 21. . That is, if the electrical passage 4 exists, it can be confirmed that the workpiece (e.g. tray) 12 is completely and normally placed on the three pillars. If the electrical path 4 is not present, it can be confirmed that the workpiece (e.g. tray) 12 is broken, tilted or there is no workpiece (e.g. tray) 12 on the pillar. The electrical characteristic may be resistance or current.

Specifically, the detection circuit 21 detects the resistance value between the two pillars 13 and 15, and the processing circuit 22 detects the resistance value between the workpiece (e.g. tray) according to the resistance value detected by the detection circuit 21. The status of (12) can be determined. In general, the material of the workpiece (e.g. tray) 12 is silicon carbide, and the correspondence between its volume resistivity and temperature is shown in Table 1.

Table of correspondence between volume resistivity and temperature of workpiece (e.g. tray) 12 temperature Volume resistivity (Ω·cm) 20℃ 108 300℃ 104 500℃ 103

As can be seen from the table above, silicon carbide has a volume resistivity of 103Ω·cm when the temperature is 500°C. The workpiece (e.g. tray) 12 has a temperature close to 500° C. under high temperature baking. Under the above temperature conditions, the resistance value between the two fillers 13 and 15 is at the kΩ level. Therefore, when the resistance value detected by the detection circuit 21 is not at the kΩ level, the processing circuit 22 may determine that the state of the workpiece (eg, tray) 12 is abnormal. However, in practical application the present invention does not limit the material of the workpiece (e.g. tray) 12. For example, the workpiece (e.g. tray) 12 may be manufactured from any other material, such as the metallic material molybdenum or steel. Since the material of the workpiece (e.g. tray) 12 is different, the volume resistivity is also different, and the resistance value between the two fillers 13, 15 is correspondingly different, the processing circuit 22 is different from the workpiece (e.g. The conditions for determining the status of the tray (12) must also be adjusted to be applicable.

For example, referring to Figure 4b, when the workpiece (e.g. tray) 12 is broken, the electrical path 4 is lost due to rupture of the conductive path formed by the workpiece (e.g. tray) 12. and does not exist. At this time, the resistance value detected by the detection circuit 21 may be much greater than the kΩ level, and the processing circuit 22 determines the resistance of the workpiece (e.g., tray) 12 according to the resistance value detected by the detection circuit 21. The condition may be judged to be abnormal.

Referring to FIG. 4C as another example, if the workpiece (e.g. tray) 12 is not broken but is not placed correctly on the three pillars 13, 14, 15, for example, if it is placed at an angle. , the electrical passage 4 between the two pillars 13 and 15 may not exist. At this time, the resistance value detected by the detection circuit 21 may be much greater than the kΩ level, and the processing circuit 22 determines the state of the workpiece (e.g., tray) 12 according to the resistance value detected by the detection circuit 21. can be judged to be abnormal.

For another example, referring to FIG. 4D, the manipulator has not yet transferred the workpiece (e.g., tray) 12 from the transfer opening or the workpiece (e.g., tray) 12 has been moved into three pieces due to reasons such as manipulator failure. If not mounted on the pillars 13, 14, 15, there is not enough workpiece (e.g. tray) 12 to form a conductive path, so that the electrical path 4 between the two pillars 13, 15 does not exist. The resistance value detected by the detection circuit 21 may also be much greater than the kΩ level, and the processing circuit 22 determines the state of the workpiece (e.g., tray) 12 according to the resistance value detected by the detection circuit 21. It can be judged as abnormal.

Overall, conditions for which the processing circuitry 22 determines the workpiece (e.g., tray) 12 to be abnormal may include the workpiece (e.g., tray) 12 being broken, tilted, or missing. However, this does not limit the present invention. As long as the electrical passage 4 between the two fillers 13 and 15 does not exist, the processing circuit 22 can determine that the state of the workpiece (e.g. tray) 12 is abnormal.

In other embodiments, the sensing circuit 21 may not directly measure the resistance between the two pillars 13 and 15. Variably, the sensing circuit 21 can detect the magnitude of the current between the two fillers 13, 15, and the processing circuit 22 can detect the magnitude of the current between the two fillers 13 and 15, and the processing circuit 22 can detect the magnitude of the current between the two pillars 13 and 15, and the processing circuit 22 can detect the magnitude of the current between the two pillars 13 and 15, and the processing circuit 22 can detect the magnitude of the current between the two pillars 13 and 15, and The status of the tray (12) can be determined. Specifically, the sensing circuit 21 outputs a current to the workpiece (e.g., tray) 12 through either the connection line L1 or the connection line L2, and either the connection line L1 or the connection line L2. Current is received from the workpiece (e.g. tray) 12 through another connection line. The processing circuit 22 determines the state of the workpiece (eg, tray) 12 depending on whether the sensing circuit 21 can receive current. If the tray 12 is not completely damaged and is normally mounted on the three pillars, an electrical passage 4 is formed between the two pillars 13 and 15 through the workpiece (eg, tray) 12. At this time, the sensing circuit 21 may receive a current from the workpiece (eg, tray) 12, and the processing circuit 22 determines that the state of the workpiece (eg, tray) 12 is normal. When the state of the workpiece (e.g. tray) 12 is as shown in FIGS. 4b, 4c, and 4d, since the electrical path 4 does not exist, the sensing circuit 21 detects the state of the workpiece (e.g. tray) 12. ) cannot receive current from 12, and the processing circuit 22 determines that the state of the workpiece (e.g. tray) 12 is abnormal.

Referring to FIG. 5A, after the processing circuit 22 determines that the state of the workpiece (e.g., tray) 12 is abnormal, the processing circuit 22 may directly transmit a termination command. The semiconductor processing apparatus 1 stops working in accordance with the stop command and waits until the user of the semiconductor processing apparatus 1 removes the abnormal situation. For example, replace the damaged workpiece (e.g. tray) 12 or accurately place the workpiece (e.g. tray) 12 on the three pillars 13, 14, 15 and then re-install the semiconductor processing device ( 1) Restart. Through this, the semiconductor processing device 1 continues to perform processing when the state of the workpiece (e.g., tray) 12 is abnormal, thereby preventing irreversible damage to other parts in the semiconductor processing device 1. You can.

However, the present invention does not restrict the processing circuit 22 from adopting an active method to terminate the operation of the semiconductor processing device 1. Referring to FIG. 5B, after the processing circuit 22 determines that the state of the workpiece (e.g., tray) 12 is abnormal, the processing circuit 22 determines the abnormal state of the workpiece (e.g., tray) 12. By displaying it on the external display equipment 50 of the semiconductor processing device 1, the user of the semiconductor processing device 1 is notified and a warning effect is realized. Obviously, the processing circuitry 22 may also notify the user of an abnormal condition of the workpiece (e.g. tray) 12 in other passive ways, for example through a warning effect such as a high-frequency sound or a flash of light. The present invention does not limit the manner in which processing circuitry 22 is notified of abnormal conditions in workpiece (e.g., tray) 12.

In the previous embodiment, the sensing circuit 21 is connected to the two pillars 13 and 15 through connection lines in the two pillars 13 and 15 to detect the state of the workpiece (e.g. tray) 12. It is explained with an example. However, those skilled in the art will know that the technical means for detecting the state of the workpiece (e.g., tray) 12 in the above-described embodiment can be applied to a combination in which the sensing circuit 21 is coupled to another filler. It is easy to understand that it exists. Referring to FIGS. 6A, 6B, and 6C, in FIG. 6A, the first sensing terminal (T1) of the sensing circuit 21 is coupled to the pillar 13 through a connection line in the pillar 13, and the second sensing terminal ( T2) is coupled to the pillar 15 through a connection line in the pillar 15. In Figure 6b, the first sensing terminal (T1) of the sensing circuit 21 is coupled to the pillar 13 through a connection line in the pillar 13, and the second sensing terminal (T2) is coupled to the pillar 13 through a connection line in the pillar 14. It is combined with (14). In FIG. 6C, the first sensing terminal (T1) of the sensing circuit 21 is coupled to the pillar 14 through a connection line in the pillar 14, and the second sensing terminal (T2) is coupled to the pillar 14 through a connection line in the pillar 15. It is combined with (15). In the embodiment of FIGS. 6A, 6B, and 6C, the first detection stage (T1) and the second detection stage (T2) of the detection circuit 21 are each coupled to one end within the pillar farthest from the base 11. This detects the electrical characteristics of the workpiece (e.g., tray) 12 placed between the fillers by hitting the workpiece (e.g., tray) 12 in a direct or indirect manner.

In the present invention, the connection line in the pillar is connected to the first sensing terminal (T1) and the second sensing terminal (T2) of the sensing circuit 21 in the manner shown in the embodiment of FIG. 7A or 7B. In FIGS. 7A and 7B , the sensing circuit 21 is connected to two pillars 13 and 14 through connection lines within the two pillars 13 and 14 as an example. Note that, in a specific embodiment of the present invention, the connecting line in the filler and the corresponding filler are molded integrally, but in other embodiments, the connecting line in the filler and the corresponding filler are manufactured separately and then the connecting line is built into the filler again. The present invention does not limit the way the connecting lines and fillers are formed.

Referring to FIG. 7A, one end of the connection line L1 built into the pillar 13 is connected to the end distant from the base 11 within the pillar 13, and is connected to the workpiece (e.g. tray) in a direct or indirect manner. It hits (12). The other end of the connection line (L1) penetrates from one end (71) of the cavity located on the upper surface of the base (11), and is transferred from the cavity to the other end (72) located on the lower surface of the base (11) to the first detection stage (T1). ) is connected to. Similarly, one end of the connection line L2 embedded in the pillar 14 is connected to the end distal from the base 11 within the pillar 14, and directly or indirectly connects the workpiece (e.g. tray) 12 ) is contacted. The other end of the connection line (L2) penetrates from one end (73) of the cavity located on the upper surface of the base (11), and is transferred from the cavity to the other end (74) located on the lower surface of the base (11) to the second detection stage (T2). ) is connected to. The detection circuit 21 and the filler are connected through the method disclosed in this embodiment, and the connection line is hidden within the base 11. Therefore, the connection line is exposed in the chamber 10, and furthermore, the connection line is damaged by the high temperature environment during the processing of the workpiece (e.g., wafer), thereby preventing the problem of the detection circuit 21 not being smoothly connected to the pillar. .

Referring to Figure 7b, one end of the connection line (L1) built into the pillar 13 is connected to the end farthest from the base 11 within the pillar 13, and is connected to the workpiece (e.g. tray) in a direct or indirect manner. It hits (12). The other end of the connecting line (L1) passes through the cavity (75) on the connecting member (13') and is connected to the first sensing end (T1). Similarly, one end of the connection line L2 embedded in the pillar 14 is connected to the end distal from the base 11 within the pillar 14, and directly or indirectly connects the workpiece (e.g. tray) 12 ) collides with. The other end of the connecting line L2 passes through the cavity 76 on the connecting member 14' and is connected to the second sensing end T2. In the embodiment of FIG. 7B, the connecting wires L1 and L2 can be fixed to the cavities 75 and 76, respectively, using soldering tin. The sensing circuit 21 and the pillar are connected through the method disclosed in this embodiment. The connection line has a relatively elastic design space. By installing cavities 75 and 76 at arbitrary positions on the connecting members 13' and 14', the sensing circuit 21 can be connected to the corresponding pillars 13 and 14.

As described above, one end of the connecting line embedded in the filler strikes the workpiece (e.g., tray) 12 in a direct or indirect manner. 8A to 8F each show different embodiments in which a connecting line embedded in a filler strikes a workpiece (e.g., a tray) 12. Additionally, the embodiments of FIGS. 8A to 8F are described using the filler 13 as an example. Referring to FIG. 8A, in the embodiment of FIG. 8A, the filler 13 may be conductive. Optionally, the filler 13 is made entirely from a conductive material. One end of the connection line (L1) built into the pillar (13) is directly connected to the end point (81) at the top of the pillar (13). Through this, the sensing circuit 21 indirectly contacts the workpiece (eg, tray) 12 through the connection line L1 and the filler 13 to detect electrical characteristics.

Referring to Figure 8b, most of the pillars 13 are not conductive in the embodiment of Figure 8b. The surface or only a portion of the surface with which the top and the workpiece (e.g. tray) 12 are in contact may be conductive. Optionally, most of the filler 13 is made of an insulating material. The surface or only part of the surface with which the upper part is in contact with the workpiece (e.g. tray) 12 is made of a conductive material. In Figure 8b, the surface made of conductive material is indicated by a dotted line. One end of the connection line L1 embedded in the pillar 13 is directly connected to the upper end point 82 of the pillar 13 made of a conductive material. Through this, the sensing circuit 21 indirectly contacts the workpiece (eg, tray) 12 through the connection line L1 and the filler 13 to detect electrical characteristics.

Referring to FIG. 8C, in the embodiment of FIG. 8C, a cavity is installed in the pillar 13. One end 83 of the cavity is located on the surface where the top of the filler 13 and the workpiece (eg tray) 12 contact. One end of the connecting line (L1) built into the filler 13 is exposed from the one end 83 of the cavity and may be in direct contact with the workpiece (eg, tray) 12. Through this, the sensing circuit 21 detects electrical characteristics by directly contacting the workpiece (eg, tray) 12 through the connection line L1. In the embodiment of FIG. 8C, the material of the filler 13 is not limited. It may be made of conductive material, insulating material or any other material.

Referring to FIG. 8D, in the embodiment of FIG. 8D, a cavity is installed in the pillar 13. One end 84 of the cavity is located on the main surface of the pillar 13, and the main surface is covered with a conductor 85. Conductor 85 is used to connect two connection lines. One end of the connection line (L1) built into the pillar (13) is directly connected to the conductor (85) from the cavity end (84). Through this, the sensing circuit 21 is indirectly connected to the workpiece (eg, tray) 12 through the connection line L1 and the conductor 85 to detect electrical characteristics.

In the embodiments of FIGS. 8A to 8D, the connection between the connection line and the filler may be a method that ensures electrical connection, such as welding, pressure welding, or flange connection. The present invention is not limited to this.

Referring to Figure 8E, a temperature sensing component 86 is installed inside the pillar 13 in the embodiment of Figure 8E. Optionally, temperature sensing component 86 is a thermocouple. The temperature sensing component 86 is connected to a temperature sensing device (not shown) by two connecting lines La and Lb to sense the temperature of the workpiece (e.g. tray) 12. In this embodiment, a shell-connected thermocouple is adopted to detect the temperature of the workpiece (e.g., tray) 12. The temperature sensing component 86 may also be exposed from the top surface of the filler 13 and be in direct contact with the workpiece (e.g. tray) 12. The temperature sensing component 86 itself is conductive. Accordingly, one of the two connecting lines (La, Lb) of the temperature sensing component 86 is connected to the sensing circuit 21 as a connecting line L1 and can be used to detect electrical characteristics.

Referring to Figure 8f, in the embodiment of Figure 8f, a temperature sensing component 87 is installed inside the pillar 13. Optionally, temperature sensing component 87 is a thermocouple. The temperature sensing component 87 is connected to a temperature sensing device (not shown) by two connecting lines La', Lb' and is used to sense the temperature of the workpiece (e.g. tray) 12. In this embodiment, a non-shell connected thermocouple is adopted to detect the temperature of the workpiece (e.g. tray) 12. Additionally, the temperature sensing component 87 is located below the top surface of the pillar 13 and is not exposed. In this case, another connection line can be used as the above-mentioned connection line (L1), one end of which is in direct or indirect contact with the workpiece (e.g. tray) 12, and the other end is connected to the detection circuit 21. do. In this embodiment, by combining embodiments in which the connecting line L1 shown in FIGS. 8A to 8D directly or indirectly connects the workpiece (e.g., tray) 12, common knowledge in the art Those skilled in the art can easily understand the method of combining Figures 8F and Figures 8A to 8D. Therefore, detailed description is omitted here to save space.

Figure 9 is a cross-sectional view of a semiconductor processing device 9 according to another embodiment of the present invention. Similar to the semiconductor processing device 1, the semiconductor processing device 9 may be a device used to perform semiconductor processes such as thin film deposition and etching on a workpiece (eg, a wafer). In this embodiment, the structure of the semiconductor processing device 9 will be described in detail by taking the case where the semiconductor processing device 9 is a magnetron sputtering device as an example.

Specifically, the semiconductor processing apparatus 9 includes a chamber 90, a base 91 disposed within the chamber 90, and a plurality of pillars (for example, three pillars 93, 94, and 95 shown in FIG. 9). ), three connecting members (93', 94', 95'), a magnetron (96), a target (97), an insulating ring (98), a cover ring (99), and a detection device (30). Chamber (90), base (91), three fillers (93, 94, 95), three connecting members (93', 94', 95'), magnetron (96), target (97), insulating ring (98) ) and the cover ring 99 are identical to the corresponding components described in the embodiment of FIG. 1 . Therefore, detailed description is omitted here to save space. The differences between the semiconductor processing equipment 9 and the semiconductor processing equipment 1 are as follows. That is, the detection device 30 is coupled to the three pillars 93, 94, and 95 through connection lines within the three pillars 93, 94, and 95 to determine the state of the workpiece 92. In this embodiment, the workpiece 92 is a tray for transporting a workpiece (eg, a wafer).

Figure 10 is a schematic diagram of a detection device 30 according to an embodiment of the present invention. The detection device 30 includes a detection circuit 31 and a processing circuit 32. Here, the sensing circuit 31 is coupled to the three pillars 93, 94, and 95, respectively, through three sets of connections (L3, L4, and L5). Each connection line set includes two connection lines. For example, the connection line set L3 includes two connection lines L3a and L3b, and the connection line set L4 includes two connection lines L4a and L4b. The connection line set (L5) includes two connection lines (L5a, L5b). The sensing circuit 31 is used to detect electrical characteristics between the pillars 93 and 94, between the pillars 93 and 95, and between the pillars 94 and 95. Specifically, the sensing circuit 31 includes a first sensing stage (T1'), a second sensing stage (T2'), and a third sensing stage (T3'). Here, the first detection stage (T1') is coupled to the pillar 93 through a connection line set (L3), and the second detection stage (T2') is coupled to the pillar 94 through a connection line set (L4), The third sensing stage (T3') is coupled to the pillar 95 through a connecting line set (L5). The processing circuit 32 is coupled to the sensing circuit 31, and the processing circuit 32 is used to determine the state of the workpiece (e.g., tray) 92 according to the electrical characteristics detected by the sensing circuit 31. do.

11A to 11D are schematic diagrams of a detection device 30 detecting a workpiece (e.g., a tray) 92 according to an embodiment of the present invention. Referring to FIG. 11A, the detection circuit 31 is connected to three pillars 93, 94, and 95 through three sets of connection lines (L3, L4, and L5), respectively. When the manipulator places the workpiece (e.g. tray) 92 on the three pillars 93, 94, 95, the sensing circuit 31 detects the workpiece (e.g. tray) through the three pillars 93, 94, 95. For example, it is electrically connected to the tray (92). If the workpiece (e.g. tray) 92 is not completely damaged and is normally placed on the three pillars, an electrical passage 5 is formed between the pillars 93 and 95 through the tray 92. do. An electrical passage 6 is formed between the filler 93 and the filler 94 through the workpiece (eg, tray) 92. An electrical passage 7 is formed between the filler 94 and the filler 95 through the workpiece (eg, tray) 92. If the workpiece (e.g. tray) 12 is broken, tilted, or there is no workpiece (e.g. tray) 12 on the pillar, then the electrical passages 5, 6 and/or 7 do not exist. . Based on this, it is possible to determine whether the state of the workpiece (e.g. tray) 12 is normal by detecting in real time the electrical characteristics between any two of the three pillars using the detection circuit 31. . That is, if all of the electrical passages 5, 6, and 7 exist, it can be confirmed that the workpiece (e.g., tray) 12 is completely and normally placed on the three pillars. If one of the electrical passages does not exist, it can be confirmed that the workpiece (e.g. tray) 12 is broken, tilted, or there is no workpiece (e.g. tray) 12 on the filler. Based on this, the sensing circuit 31 determines the electrical characteristics between the filler 93 and the filler 95, the electrical characteristics between the filler 93 and the filler 94, and the electrical characteristics between the filler 94 and the filler 95. Detect characteristics in real time. The processing circuit 32 determines the state of the workpiece (eg, tray) 92 according to the electrical characteristics detected by the sensing circuit 31. The electrical characteristic may be resistance or current.

Specifically, the detection circuit 31 detects the resistance value between the pillars 93 and 95 through the connection lines L3a and L5a. The detection circuit 31 detects the resistance value between the pillars 93 and 94 through the connection lines L3b and L4a. The detection circuit 31 detects the resistance value between the pillars 94 and 95 through the connection lines L4b and L5b. The processing circuit 32 determines the state of the workpiece (eg, tray) 92 according to the resistance value detected by the detection circuit 31.

As illustrated in the embodiment of FIG. 4A , if the material of the workpiece (e.g., tray) 92 is silicon carbide, if the sensing circuit 21 is detected between filler 93 and filler 95, filler 93 ) and the filler 94 and between the filler 94 and the filler 95, if the resistance value between one pair of fillers is not at the kΩ level, the processing circuit 22 detects the workpiece (e.g., tray )(92) can be judged to be abnormal.

As shown in Figure 11b, when the workpiece (e.g. tray) 92 is broken, the electrical passage 6 between the filler 93 and the filler 94 still exists, but the filler 93 and the filler 94 still exist. The electrical passage 5 between 95 and the electrical passage 7 between filler 94 and filler 95 do not exist due to damage to the workpiece (e.g. tray) 92. At this time, the resistance value between the pillars 93 and 95 and the resistance value between the pillars 94 and 95 detected by the sensing circuit 31 may be much greater than the kΩ level. The processing circuit 32 may determine that the state of the workpiece (eg, tray) 92 is abnormal according to the resistance value detected by the detection circuit 31.

Referring to FIG. 11C, if the workpiece (e.g. tray) 92 is not placed correctly on the three pillars 93, 94, and 95, for example, if it is placed at an angle, the electrical passages 5, 6, and 7 ) do not exist at all. The resistance value between the filler 93 and the filler 95 detected by the sensing circuit 31, the resistance value between the filler 93 and the filler 94, and the resistance value between the filler 94 and the filler 95 are All can be much larger than the kΩ level. The processing circuit 32 may determine that the state of the workpiece (eg, tray) 92 is abnormal according to the resistance value detected by the detection circuit 31.

Referring to FIG. 11D, when the workpiece (e.g., tray) 92 is not mounted on the pillars 93, 94, and 95, the electrical passages 5, 6, and 7 do not exist. The resistance value between the filler 93 and the filler 95 detected by the sensing circuit 31, the resistance value between the filler 93 and the filler 94, and the resistance value between the filler 94 and the filler 95 are Likewise, they can all be much larger than the kΩ level. The processing circuit 32 may determine that the state of the workpiece (eg, tray) 92 is abnormal according to the resistance value detected by the detection circuit 31.

Overall, conditions for which the processing circuitry 32 determines the workpiece (e.g., tray) 92 to be abnormal may include the workpiece (e.g., tray) 92 being broken, tilted, or missing. However, this does not limit the present invention. If any one of the electrical passages 5, 6, and 7 does not exist, the processing circuit 32 may determine that the state of the workpiece (e.g., tray) 92 is abnormal.

In another embodiment, the sensing circuit 31 may detect a resistance value between the pillars 93 and 95, a resistance value between the pillars 93 and 94, and a resistance value between the pillars 94 and 95. The resistance value may not be measured directly. Variably, the sensing circuit 31 can sense the magnitude of the current between the pillars 93 and 95, between the pillars 93 and 94, and between the pillars 94 and 95. The processing circuit 32 may determine the state of the workpiece (eg, tray) 92 according to the magnitude of the current detected by the sensing circuit 31.

Specifically, the sensing circuit 31 outputs a current to the workpiece (e.g., tray) 92 through either the connection line L3a or the connection line L5a, and either the connection line L3a or the connection line L5a. Current is received from the workpiece (e.g. tray) 92 through another connection line. The processing circuit 32 determines the state of the workpiece (eg, tray) 92 depending on whether the sensing circuit 31 can receive current. If the tray 12 is not completely damaged and is normally mounted on the three pillars, an electrical passage 5 is formed between the pillars 93 and 95 through the workpiece (e.g. tray) 12. . At this time, the detection circuit 31 may receive a current from the workpiece (e.g., tray) 12, and the processing circuit 32 determines that the state of the workpiece (e.g., tray) 12 is normal. do. When the state of the workpiece (e.g. tray) 92 is as shown in FIGS. 11b, 11c, and 11d, since the electrical passage 5 does not exist, the sensing circuit 31 detects the state of the workpiece (e.g. tray) 92. ) cannot receive current from (92). Additionally, the processing circuit 32 determines that the state of the workpiece (e.g., tray) 92 is abnormal.

Similarly, the sensing circuit 31 outputs a current to the workpiece (e.g., tray) 92 through either the connecting line L3b or the connecting line L4a, and connects the connecting line L3b or the connecting line L4a. Receives current from the workpiece (e.g. tray) 92 through another connection line. The processing circuit 32 determines the state of the workpiece (eg, tray) 92 depending on whether the sensing circuit 31 can receive current. If the tray 12 is not completely damaged and is normally mounted on the three pillars, an electrical passage 6 is formed between the pillars 93 and 94 through the workpiece (e.g., tray) 12. . At this time, the detection circuit 31 may receive a current from the workpiece (e.g., tray) 12, and the processing circuit 32 determines that the state of the workpiece (e.g., tray) 12 is normal. do. When the state of the workpiece (e.g. tray) 92 is as shown in FIGS. 11b, 11c, and 11d, since the electrical passage 6 does not exist, the sensing circuit 31 detects the state of the workpiece (e.g. tray) 92. ) cannot receive current from (92). Additionally, the processing circuit 32 accordingly determines that the state of the workpiece (e.g., tray) 92 is abnormal.

The sensing circuit 31 outputs a current to the workpiece (e.g. tray) 92 through one of the connection lines L4b or L5b, and the other of the connection lines L4b or L5b. Current is received from the workpiece (e.g. tray) 92 through a connection line. The processing circuit 32 determines the state of the workpiece (eg, tray) 92 depending on whether the sensing circuit 31 can receive current. If the tray 12 is not completely damaged and is normally mounted on the three pillars, an electrical passage 7 is formed between the pillars 94 and 95 through the workpiece (e.g., tray) 12. . At this time, the detection circuit 31 may receive a current from the workpiece (e.g., tray) 12, and the processing circuit 32 determines that the state of the workpiece (e.g., tray) 12 is normal. do. When the state of the workpiece (e.g. tray) 92 is as shown in FIGS. 11b, 11c, and 11d, the sensing circuit 31 detects the workpiece (e.g. tray) because the electrical passage 7 does not exist. Current from (92) cannot be received. Additionally, the processing circuit 32 determines that the state of the workpiece (e.g., tray) 92 is abnormal.

The processing circuit 32 described above notifies that the condition of the workpiece (e.g. tray) 92 is abnormal according to the scheme adopted in the processing circuit 22 shown in FIGS. 5A and 5B. For example, a warning effect is implemented by displaying an abnormal state of a workpiece (e.g., a tray) on an external display device of the semiconductor processing device and notifying the user of the semiconductor processing device. Detailed description is omitted here to save space.

In addition, the connection line method of the three pillars (93, 94, 95) and the sensing circuit 31 is the same as that of the pillars (13, 14, 15) and the sensing circuit (21) shown in FIGS. 7A, 7B, and 8A to 8F. It can be connected depending on the connection method. Therefore, detailed description is omitted here to save space.

Those skilled in the art can easily understand the quantity and form of the filler in the semiconductor processing apparatus disclosed and limited by the present invention and the connection method with the sensing circuit after reading the above-described embodiments. As long as the electrical characteristics between the filler and the filler can be detected through contact between the filler and the workpiece (eg, the tray), it is possible to effectively determine whether the condition of the workpiece (eg, the tray) is abnormal. Additionally, it is possible to prevent other parts within the semiconductor processing equipment from being irreversibly damaged due to abnormal conditions of the workpiece (e.g., tray).

In the above-described embodiment, the pillar of the semiconductor processing device 1 or 9 may be an ejector pin on the base 11 or 91. It may be equipped with a telescopic mechanism to control the pillar to rise and fall on the base to support a workpiece (e.g. a tray). However, the present invention is not limited to this. In another embodiment, the pillar may be a component installed on the base in addition to the ejector pin to support the workpiece (eg, tray). Referring to FIG. 12, the base 51, three pillars 53, 54, and 55 and the workpiece (e.g. tray) 52 shown in FIG. 12 are corresponding components of the semiconductor processing devices 1 and 9. Similar to elements. The difference is that the three pillars 53, 54, 55 support the workpiece (e.g. tray) 52 as ejector pins on the base 51. However, among the three pillars 53, 54, and 55, a connection line connected to the detection device is not installed. Correspondingly, three support members 56, 57, and 58 are additionally installed on the base 51. Three sets of connection lines (L6, L7, L8) are respectively installed on the three support members (56, 57, and 58) to connect the detection devices. In this way, the detection device can detect the electrical characteristics between the three support members 56, 57, and 58 through the three sets of connection lines L6, L7, and L8. There is an elastic structure similar to a spring between the three support members 56, 57, and 58 and the base 51, which can cushion the pressure exerted by the three support members 56, 57, and 58. However, this does not limit the present invention. The three support members 56, 57, 58 may be connected to the base 51 through a connecting member, such as the three pillars 13, 14, 15 or the three pillars 93, 94, 95 in the above-described embodiment. You can.

Regarding the connection method of the three sets of connection lines (L6, L7, L8) in the three support members (56, 57, and 58), the embodiments of FIGS. 7A, 7B, and 8A to 8F may be referred to. A person skilled in the art, after reading the above-described embodiments, will know how to detect electrical characteristics through the detection device and the three support members 56, 57, 58 and the workpiece (e.g. tray) 52. It is easy to understand how to determine the status of . Therefore, detailed description is omitted here to save space.

To briefly summarize the present invention, electrical characteristics between pillars can be detected in real time by directly or indirectly connecting the connection line within the pillar to the workpiece (eg, tray). If the difference between the electrical characteristics and the default situation is too large, the detection device disclosed in the present invention can accordingly determine that the state of the workpiece (eg, tray) is abnormal. Additionally, by actively stopping system operation or passively notifying the user, parts within the system can be prevented from being irreversibly damaged.

Claims (11)

In a semiconductor processing device,
A semiconductor processing device comprising a chamber, a plurality of pillars disposed within the chamber, and a base for supporting the plurality of pillars, the plurality of pillars being used to transport a workpiece, the semiconductor processing device comprising a detection device, a temperature sensing component, and It further includes a temperature detection device, wherein the detection device is coupled to at least two fillers among the plurality of fillers, and detects any two fillers among the at least two fillers coupled to the detection device to determine the state of the workpiece. used to judge,
The temperature sensing component is installed inside the pillar and is exposed from the top surface of the pillar to contact the workpiece,
The temperature sensing component is a thermocouple and is connected to the temperature sensing device with two connection lines to sense the temperature of the workpiece,
The detection device is,
a sensing circuit connected to the thermocouples of the at least two pillars, and used to sense electrical characteristics between the thermocouples of any two of the at least two pillars - the two of the pillars connected to the temperature sensing device; One of the connection lines is connected to the sensing circuit, and the sensing circuit is connected to the filler through the connecting line. and
a processing circuit coupled to the sensing circuit and used to determine the condition of the workpiece according to the electrical characteristics;
The temperature sensing component itself is conductive, and one of the two connecting lines connected to the temperature sensing component is connected to the temperature sensing device and the sensing circuit, such that the connecting line determines the temperature sensing and electrical characteristics of the workpiece. used for detection,
The electrical characteristic is a resistance value between any two of the at least two pillars, or the detection device outputs a first current from one of the two pillars to the workpiece and the other of the two pillars. One receives a second current from the workpiece, and the electrical characteristic is a current value of the second current received by the other of the two pillars;
The detection device detects the state of the workpiece in real time when the workpiece is placed on the plurality of pillars, when the workpiece moves in a direction toward the target, or when processing the workpiece. can;
When the workpiece is normal, an electrical path is formed between the thermocouples of any two of the at least two pillars through the workpiece, and the normal situation here is a situation in which the workpiece is not damaged or is mounted correctly;
When the workpiece is abnormal, the thermocouple of any two of the at least two pillars is disconnected, and the abnormal situation here is a situation in which the workpiece is damaged or not mounted correctly. According to paragraph 1,
There are three pillars, which are a first pillar, a second pillar and a third pillar, respectively, and the sensing circuit is connected to the first pillar, the second pillar and the third pillar, and the first pillar and the third pillar. A semiconductor processing device, characterized in that detecting the electrical characteristics between second pillars, between the first pillar and the third pillar, and between the second pillar and the third pillar. According to paragraph 1,
The detection circuit is,
A semiconductor processing device comprising the at least two sensing stages, wherein each sensing stage of the at least two sensing stages is coupled to an end of each pillar furthest from the base among the at least two pillars. According to paragraph 3,
The sensing stage is connected to the sensing circuit through a connection line between the corresponding pillars and a cavity on the base. According to claim 1 or 3,
A semiconductor processing device comprising an insulating material and used to connect the pillar to the base to electrically insulate the base and the pillar. According to paragraph 3,
further comprising a connecting member comprising an insulating material and used to connect the pillar to the base to electrically insulate between the base and the pillar;
The sensing stage is connected to the sensing circuit through a connecting line between the corresponding pillars and a cavity on the connecting member. In a semiconductor processing device,
Comprising a chamber and a plurality of fillers disposed within the chamber, the plurality of fillers being used to transport a workpiece, the semiconductor processing device further comprising a detection device, a temperature sensing component, and a temperature sensing device,
The temperature sensing component is installed inside the pillar and is exposed from the top surface of the pillar to contact the workpiece,
The temperature sensing component is a thermocouple and is connected to the temperature sensing device with two connection lines to sense the temperature of the workpiece,
The detection device is,
A sensing circuit connected to the thermocouple of at least two of the plurality of pillars, wherein the sensing circuit is used to detect electrical characteristics between the thermocouples of any two of the at least two pillars connected to the sensing circuit, One of the two connection lines connected to the temperature sensing device in the filler is connected to the sensing circuit, and the sensing circuit is connected to the filler through the connecting line. and
a processing circuit coupled to the sensing circuit, the processing circuit being used to notify a user of the semiconductor processing apparatus of the electrical characteristic sensed by the sensing circuit;
The temperature sensing component itself is conductive, and one of the two connecting lines connected to the temperature sensing component is connected to the temperature sensing device and the sensing circuit, such that the connecting line determines the temperature sensing and electrical characteristics of the workpiece. used for detection,
The electrical characteristic is a resistance value between any two of the at least two pillars, or the detection device outputs a first current from one of the two pillars to the workpiece and the other of the two pillars. One receives a second current from the workpiece, and the electrical characteristic is a current value of the second current received by the other of the two pillars;
The detection device detects the state of the workpiece in real time when the workpiece is placed on the plurality of pillars, when the workpiece moves in a direction toward the target, or when processing the workpiece. can;
When the workpiece is normal, an electrical path is formed between the thermocouples of any two of the at least two pillars through the workpiece, and the normal situation here is a situation in which the workpiece is not damaged or is mounted correctly;
When the workpiece is abnormal, the thermocouple of any two of the at least two pillars is disconnected, and the abnormal situation here is a situation in which the workpiece is damaged or not mounted correctly. In the magnetron sputtering device,
chamber;
a plurality of pillars disposed within the chamber and used to support a workpiece;
a base disposed in the chamber, used to support the plurality of pillars, and driving the plurality of pillars to move up and down;
a target and a magnetron disposed within the chamber and used to perform thin film deposition on the workpiece;
a detection device coupled to at least two of the plurality of fillers - used to determine the state of the workpiece by selecting any two fillers among the at least two fillers coupled to the detection device and performing detection;
temperature sensing components; and
comprising a temperature sensing device,
The temperature sensing component is installed inside the pillar and is exposed from the top surface of the pillar to contact the workpiece,
The temperature sensing component is a thermocouple and is connected to the temperature sensing device with two connection lines to sense the temperature of the workpiece,
The detection device is,
a sensing circuit connected to the thermocouples of the at least two pillars, and used to sense electrical characteristics between the thermocouples of any two of the at least two pillars - the two of the pillars connected to the temperature sensing device; One of the connection lines is connected to the sensing circuit, and the sensing circuit is connected to the filler through the connecting line. and
a processing circuit coupled to the sensing circuit and used to determine the condition of the workpiece according to the electrical characteristics;
The temperature sensing component itself is conductive, and one of the two connecting lines connected to the temperature sensing component is connected to the temperature sensing device and the sensing circuit, such that the connecting line determines the temperature sensing and electrical characteristics of the workpiece. used for detection,
The electrical characteristic is a resistance value between any two of the at least two pillars, or the detection device outputs a first current from one of the two pillars to the workpiece and the other of the two pillars. One receives a second current from the workpiece, and the electrical characteristic is a current value of the second current received by the other of the two pillars;
The detection device detects the state of the workpiece in real time when the workpiece is placed on the plurality of pillars, when the workpiece moves in a direction toward the target, or when processing the workpiece. You can;
When the workpiece is normal, an electrical path is formed between the thermocouples of any two of the at least two pillars through the workpiece, and the normal situation here is a situation in which the workpiece is not damaged or is mounted correctly;
If the workpiece is abnormal, the thermocouple of any two of the at least two fillers is disconnected, and the abnormal situation here is a situation in which the workpiece is damaged or not mounted correctly. Magnetron sputtering device. delete delete delete