515022 五 、發明說明（1) 圓产i ί明係有關於一種偵測裝置’特別是-種偵測在晶 以二播=成後、.，支撐構件將晶圓撐離晶座至一既定位置， 、為手臂準確且不傷害晶圓下，將晶圓取出的裝置。 _邛刀半導體裝置之生產流程在一半封閉的反應室中 例如薄膜沉積薄膜沉積（Thin Film Deposition)、 j(Etching)及摻雜（D〇ping)等等，以下分 驟進行簡單描述。 =膜沉積依發生順序可分為以下幾個步驟：長晶、晶 l ^、晶粒聚結、縫道填補及沉積膜成長；主要可分為 氣相沉積（Physical Vapor Dep〇siti〇n)及化學氣相 ^、aheraical Vapor Dep〇siti〇n);前者是利用物理現 二後者疋利用化學反應的方式，來進行薄膜沉積。在目 則VLSI的製程技術中，物理氣相沉積有許多製程上遭遇的 困難無法解決，例如僅能作金屬薄膜的沉積，所以化學氣 相沉積的地位日益重要。 〃 钱刻製程的功能是要把沒有被光阻覆蓋及保護的部分 ’以化學反應或物理作用的方式加以去除，以完成轉移光 罩圖案到薄膜上面的目的。蝕刻技術主要有兩種，一種是 濕蝕刻（Wet Etching)，一種是乾蝕刻（Dry Etching);= 一種方法主要是利用化學反應來進行薄膜的蝕刻，為等向 性餘刻；而後面的方法主要是利用物理的作用來進行，作 並非完全都是，為非等向性蝕刻。 一 對半導體加入少量特定雜質以產生因施體或受體所演 生的能階使半導體的電性發生變化的動作稱為摻雜 、515022 V. Description of the invention (1) Yuanming i is related to a detection device 'especially-a type of detection after the crystal is broadcasted to the second stage. The supporting member supports the wafer away from the wafer to a predetermined position. The position is a device that takes out the wafer with accurate arm and without harming the wafer. The production process of the trowel semiconductor device is in a semi-closed reaction chamber, such as thin film deposition, thin film deposition, doping and so on. The following steps are briefly described below. = Film deposition can be divided into the following steps according to the order in which it occurs: crystal growth, crystal l ^, grain agglomeration, gap filling, and deposition film growth; mainly divided into vapor deposition (Physical Vapor Dep〇siti〇n) And chemical vapor phase, aheraical Vapor DepOsiti〇n); the former is the use of physical physics and the latter 疋 chemical reaction method for thin film deposition. In the current VLSI process technology, physical vapor deposition has many difficulties encountered in the process that cannot be solved. For example, it can only be used for the deposition of metal thin films, so the status of chemical vapor deposition is increasingly important.功能 The function of the money engraving process is to remove the parts that are not covered and protected by photoresist through chemical reaction or physical action to complete the purpose of transferring the mask pattern to the film. There are two main etching technologies, one is Wet Etching, and the other is Dry Etching; = one method is to use chemical reactions to etch the thin film, which is isotropic; and the latter method It is mainly carried out by the action of physics, not all of them are anisotropic etching. The action of adding a small amount of specific impurities to a semiconductor to produce a change in the electrical properties of the semiconductor due to the energy level generated by the donor or acceptor is called doping,
D1JUZZ 五、發明說明（2) =兩種，一種是擴散法(Dlffuslon)，一種是離子植 M mWantat1011)。現在的摻雜製程為了能有效且 =控制摻質在晶片理的含量及分佈，並降低所需有的熱 敎lelm udget)，幾乎都是以離子植人法來進行； 傳、、先熱=的方法則逐漸成為離子植入技術 控制將ί涉到複雜的溫度，等 室中W声t 聚來進行處理，都必須在反應 理-二 以下更以電衆蝕刻(Plasma Etching)的處 理々丨L私為例以說明之。 刻係利用電漿來將反應熬體的分子解 =士被钱刻物的材質具有反應性(Reactive)的離子十:曰 =後猎由上述反應性的離子與上述被蝕刻物之間的化與 =，而將曝露在電漿下的被蝕刻物予以反應威揮發性于 (J^atUe)的生成物，接著藉由真空系統來抽出之。过夂 考弟1圖’首先，在反應室"中，位於晶座13上的 γ 撐構件1 5會升起至到達既定位置的高度。一待處理。 1 2會放置在機器手臂丨4上，由機器手臂丨4將晶圓1 2、关曰曰圓 應室11中，並將晶圓丨2放置在這四個支撐構件丨5上=入， ，機器手臂1 4退出反應室丨丨，反應室丨丨關閉， 椹，著 會下降，以將晶圓12放置在晶座13上。然德，乂二#件15 應室11中進行電漿蝕刻處理。處理完畢之後，必反 完成的晶圓1 2取出，因此四個支撐構件丨5會將貞理二处理 晶圓1 2撐起至既定位置，機器手臂丨4會進入反=室^畢的 0503-6714TWf;TSMC2001-0580;Claire.ptd 第5頁 515022 五、發明說明（3) 並將處理完畢之晶圓1 2取出。 但是在取出晶圓1 2的過程中，支撐構件】5必須 12撐出晶座丨5以到達一既定位置，但是有時晶圓12合二^ =而無法撐起’或者是支樓構件15將晶圓12撐=貝： 置或正確’導致機器手臂14無法將晶圓 ，’更甚者機器手臂14會撞擊到晶圓12 = =，這不僅損失了晶圓，更浪費了㈣處理的材It 有鑑於此，本發明提供一種侦測 f發明更提供-種伯測晶圓平衡放置法正： 晶圓是否被平衡的撐起。 實k偵測 根據上述目的，本發明接 裝置，包括：一晶座，J，一種偵測晶圓平衡位置之 支擇構件，設置於晶座 放置一晶圓；複數 位置之間；及—偵測電路，輕位置及第二 第-位置時實行偵測； =冓件上’在晶圓於 置與複數支撐構件之間置，耦接複數感測震 測裝置與支撐構二；t第-位置時電性導通感 ’用以感測支撐構件之複數電]更2:複數感測裝置 複數感測裝置，用以^ 比較器’轉接於 鎖裝置，耦接於比較=&值並輸出一控制信號；一互 n备控制信號為低壓電壓信號時， 〇5〇3-67l4TWf；TSMC2001-0580;Clai re.ptd 第6頁 M5U22 發明說明（4) 用以停止該機器手臂之動作。。 f發明更提供一種偵測晶圓平衡放置的方法，適用於 /、有aa座、複數支撐構件、複數感測裝置、、 ::=互鎖裝置之發明裝置，包括下列步驟：以1 :數支放置於一反應室中之複數支撐構件上；其中 複數電2件？出該晶^;藉由感測裝置感測支撐構件之 複數電£值’肖由比較器比較複數電壓值，並輸出 Π動:控制信號為低電壓信號時…裝置停止機器』 為了讓本發明之上述和其他目的、 =懂-文特舉出較佳實施例，並配合圖; 圖式簡單說明： 苐1圖係習知之位於及廡宮中之 機器手臂之剖面示意圖應至0曰座與支撐構件，及 第2圖係本發明之之位於反應 件，及機器手臂之剖面示意圖。Τ之阳座與支擇構 符號說明： 11〜反應室； 1 3〜晶座； 15〜支撐構件； 2 2〜晶圓； 2 4〜機器手臂； 26a〜第一電容 ^ 1 2〜晶圓； 1 4〜機器手臂； 2 1〜反應室； 23〜晶座； 2 5〜支樓構件； 26b〜第一電容；D1JUZZ 5. Description of the invention (2) = two types, one is the diffusion method (Dlffuslon), and the other is ion implantation (M mWantat1011). In order to effectively control the content and distribution of dopants on the wafer, and reduce the required heat (lelm udget), the current doping process is almost always carried out by ion implantation method. The method of ion implantation technology has gradually become a complex temperature, and it must be treated in the same way as Plasma Etching. L private as an example to illustrate. The engraving system uses a plasma to resolve the molecules of the reaction body. The material of the carved object is reactive (Reactive). Ten: = = Hunting is performed by the reaction between the reactive ion and the object to be etched. And =, and the material to be etched exposed to the plasma is reacted to a product that is volatile in (J ^ atUe), and then extracted by a vacuum system.夂 夂 Corti's figure 1 'First, in the reaction chamber ", the γ support member 15 on the crystal base 13 will be raised to a height where it reaches a predetermined position. One pending. 1 2 will be placed on the robot arm 丨 4, the wafer 1 will be placed by the robot arm 丨 4 in the round reaction chamber 11, and the wafer 丨 2 will be placed on the four support members 丨 5 = The robotic arm 14 exits the reaction chamber 丨 丨, and the reaction chamber 丨 丨 closes. Alas, it will descend to place the wafer 12 on the wafer base 13. Ran De, # 2 # 15 should be plasma etched in the chamber 11. After the processing is completed, the completed wafer 1 2 must be taken out. Therefore, the four supporting members 5 will support the second processing wafer 1 2 to a predetermined position, and the robot arm 4 will enter the reverse chamber 502. -6714TWf; TSMC2001-0580; Claire.ptd Page 5 515022 5. Description of the invention (3) Take out the processed wafers 12. However, in the process of taking out the wafer 12, the supporting member] 5 must be 12 to support the wafer 5 to reach a predetermined position, but sometimes the wafer is 12 in 2 ^ = and cannot be supported 'or the supporting member 15 Will the wafer 12 support = be: set or correct 'cause the robotic arm 14 can not be able to wafer, or even the robotic arm 14 will hit the wafer 12 = =, which not only loses the wafer, but also wastes the processing In view of this, the present invention provides a method for detecting f inventions-a method for measuring the balance of a wafer by placing it in a positive position: whether the wafer is supported in a balanced manner. Real k detection According to the above purpose, the connecting device of the present invention includes: a wafer base, J, a selective member for detecting the equilibrium position of the wafer, which is arranged on the wafer base to place a wafer; between a plurality of positions; and Detection circuit, detection is performed when the light position and the second-position are; = on the file, 'wafer is placed between the wafer and the plurality of supporting members, and the plurality of sensing seismic devices and the supporting structure are coupled; tth- The electrical continuity at position 'is used to sense the multiple electricity of the supporting member] more 2: the multiple sense device is used to ^ the comparator' is connected to the lock device, coupled to the comparison = & value and Output a control signal; when the alternate control signal is a low-voltage voltage signal, 0505-67l4TWf; TSMC2001-0580; Clai re.ptd page 6 M5U22 Description of the invention (4) Used to stop the movement of the robot arm. . The invention f also provides a method for detecting the balanced placement of the wafer, which is applicable to the invention device having an aa seat, a plurality of supporting members, a plurality of sensing devices, and :: = interlocking devices, including the following steps: Are placed on a plurality of supporting members in a reaction chamber; of which two are electric? The crystal ^ is used to sense the complex electric value of the support member by the sensing device. The value of the complex voltage is compared by a comparator, and the motion is output: when the control signal is a low voltage signal ... the device stops the machine. For the above and other purposes, = Understand-Wente cited the preferred embodiment, and the diagrams are simply explained: 苐 1 is a cross-sectional schematic diagram of a conventional robotic arm located in and in the palace. The component, and FIG. 2 are schematic cross-sectional views of the reaction member and the robot arm of the present invention. Explanation of the symbol of the sun seat and supporting structure: 11 ~ reaction chamber; 1 ~ crystal seat; 15 ~ support member; 2 ~ wafer; 2 ~ machine arm; 26a ~ first capacitor ^ 1 ~ 2 ~ wafer 1 4 ~ robot arm; 2 1 ~ reaction chamber; 23 ~ crystal seat; 2 5 ~ branch member; 26b ~ first capacitor;
515022515022
27b〜第一開關 29〜互鎖裝置， 五、發明說明（5) 2 7 a〜第一開關 28〜比較器； 實施例： 請參考第2圖，首先，在反應室 的四個支撐構件25會升起至到達第_位置的高於 理的晶圓2 2會放置在機器手臂2 4上，、处 22迻入/5雍它91 士 田执為手臂24將晶圓 k入反應至21中，並將晶圓22放置 上。接著，機器手臂24退出反應室21，反岸；2=件25 撐構件25會下％，以將晶圓22放置在晶座2;之第置士 。然後’在關閉的反應室21中進行處理。處理完；之後， :須將處理完成的晶圓22取出，因 =完畢的晶圓22撐起至第—位置，制手^ == 心至21 :，並將處理完畢之晶圓22取出。 99 ^是在取出晶圓22的過程中，支撐構件25必須將晶圓 到達第一位置，…時晶圓^ 或角度不正確而未位在第一位置i，m 將晶圓22順利的抬起，更甚者機器手臂24會撞 二二晶圓22損毀或掉落’這不僅損失了 蝕刻處理的材料及時間。 文展賈了 所以本發明在支撐構件25a上搞接一第一電容26a，# 上搞接一第二電容_，偵測電:以 構件，電壓值’並將第一電容，及第二電容m = 2 比車乂益2 8 ’比較器2 8則耦接於一互鎖裝置2 g。當支撐構件27b ~ first switch 29 ~ interlocking device, five, description of the invention (5) 2 7 a ~ first switch 28 ~ comparator; Example: Please refer to FIG. 2, first, four support members 25 in the reaction chamber The higher-level wafer 2 that will rise to the _ position will be placed on the robotic arm 2 4 and moved to position 22 // 5. It will be held by Shi Tian as arm 24 and will react to 21 And put the wafer 22 on. Next, the robot arm 24 exits the reaction chamber 21, and reverses the shore; 2 = 25 pieces of the support member 25 will be lowered to place the wafer 22 in the wafer seat 2; Processing is then performed in the closed reaction chamber 21. After the processing is completed, the wafer 22 that has been processed must be taken out, because the finished wafer 22 is held up to the first position, and the hand ^ == the center is 21:, and the processed wafer 22 is taken out. 99 ^ is that during the process of taking out the wafer 22, the supporting member 25 must reach the first position of the wafer, ... when the wafer ^ or the angle is incorrect and is not in the first position i, m smoothly lifts the wafer 22 Moreover, the robotic arm 24 will collide with the two or two wafers 22 and be damaged or dropped. This not only loses the material and time of the etching process. The exhibition is completed, so the present invention connects a first capacitor 26a to the supporting member 25a, and # connects a second capacitor to the #, and detects electricity: the component, the voltage value, and the first capacitor and the second capacitor. m = 2 Than car 2 2 'The comparator 2 8 is coupled to an interlocking device 2 g. When the supporting member
515022 五、發明說明（6) ^支撐有晶圓22時，電容26a和26b、支撐構件25及晶圓22 會形成一導通的迴路，因此晶圓22在反應室中進行例如電 水^刻處理時，電漿的高能量會使電容26a及26b損毀而使 此迴，斷路，如此一來，電容26a及26b則無法偵測支撐構 件25是否將處理完成的晶圓22移至正確的位置。因此，本 毛明更在支撑構件25a與電容26a之間耦接一開關27a，在 支撐構件25b與電容26b之間耦接一開關27b。當支撐構件 2^將晶圓22移動至晶座23上之第二位置時，開關27a及27b ί ^卩f，使迴路斷路，所以進行電漿餘刻處理時，電漿的 间此里對電容26a及26b不會有影響；而當反應室21中所進 行的處理完成之後，開關27&及271)就會關閉，使迴路成為 通路，電容2 6a及2 6b即可對此迴路的電壓進行偵測。 當1測出的電壓值小於一預設值日夺，會輸出一低電壓 測出的電壓值大於一預設值日寺，則輸出一高電壓 “貞測得一第一電壓值，第二電容2 ，仔二第二電壓值；當第一電壓值及第二電壓值小於一電 爯為低電壓訊號，當第-電壓值及第二電壓 設值時’稱為高電壓訊號。比較器28會對 電壓值及第二電麼值進行比較，當其中之一; :g:“父裔28會輸出一控制訊號至互鎮裝置29:互鎖 及詳細值如表一所示。 知月谷項袤置之情形515022 5. Description of the invention (6) ^ When the wafer 22 is supported, the capacitors 26a and 26b, the support member 25 and the wafer 22 will form a conductive loop, so the wafer 22 is subjected to, for example, electro-hydraulic etching in the reaction chamber. At this time, the high energy of the plasma will damage the capacitors 26a and 26b and cause the circuit to be disconnected. As a result, the capacitors 26a and 26b cannot detect whether the supporting member 25 moves the processed wafer 22 to the correct position. Therefore, the present invention further couples a switch 27a between the support member 25a and the capacitor 26a, and couples a switch 27b between the support member 25b and the capacitor 26b. When the support member 2 ^ moves the wafer 22 to the second position on the wafer holder 23, the switches 27a and 27b are switched to open the circuit. Therefore, when plasma treatment is performed, the plasma is aligned between Capacitors 26a and 26b will not have any effect; and when the processing in reaction chamber 21 is completed, switches 27 & Detect. When the measured voltage value of 1 is less than a preset value, it will output a low voltage. The measured voltage value is greater than a preset value. It will output a high voltage, "A measured first voltage value, the second Capacitance 2 and second voltage value; when the first voltage value and the second voltage value are less than one voltage, it is a low voltage signal. When the first voltage value and the second voltage value are set, it is called a high voltage signal. Comparator 28 will compare the voltage value and the second electrical value, when one of them is;: g: "Father 28 will output a control signal to the mutual ballast device 29: Interlock and detailed values are shown in Table 1. The situation of Zhiyuegu Xiang
515022 五、發明說明（7) 狀態 支格構件位 於第一位置 第一電壓値 >預設値 ，衣&心丨冃7 第二電壓値 >預設値 Γ夕π日干ί 比較器 互鎖裝置 機器手臂取 下晶圓 1.晶圓位置 正確 X 是 丄日曰圓ΐϋ置 偏移I X- X 否 3_晶圓悅置 偏移II X ~X— 否一 4.晶圓位置 偏移III %r X Λ X ✓ Γ ^ 5.晶圓?貝_ ▼ X __ Λ X 否— 如表一所述之第一種狀態，在晶圓22位置正確的狀態 下時’支撐構件25之位置位於卜位^，當支撐構件心 撐起晶圓22的位置正確時，第一電容26a偵測出之第一電 壓值大於預設電壓值；支撐構件25b撐起晶圓22的位置亦 正確時，第二電容26b偵測出之第二電壓值亦大於預設電 !值時。比較器28所比較之第一電壓值及第二電壓值同為 回電壓’所以比較器2 8不會輸出控制訊號至互鎖裝置2 9， 所以機杰手臂2 4可以順利取下晶圓2 2。 如表一所述之第二種狀態，在晶圓2 2位置偏移I的狀 悲下日守，支撐構件2 5之位置位於第一位置，當支撐構件 25a撐起晶圓22的位置正確時，第一電容26a偵測出之第一 電壓值大於預設電壓值；支撐構件25b撐起晶圓22的位置 不正確時，第二電容26b偵測出之第二電壓值小於預設電 壓值。比較器28所比較之第一電壓值為高電壓，而第二電515022 V. Description of the invention (7) The state support grid member is located at the first position. The first voltage 値 > preset 値, clothing & heart 冃 7 second voltage 値 > Interlocking device robotic arm removes wafer 1. Wafer position is correct X Yes Next day round offset I X- X No 3_Wafer pleasing offset II X ~ X— No 4. Wafer position Offset III% r X Λ X ✓ Γ ^ 5. Wafers? ▼ X __ Λ X No — as in the first state described in Table 1, when the wafer 22 is in the correct position, the support member 25 The position is at the position ^. When the position of the supporting member core supporting the wafer 22 is correct, the first voltage value detected by the first capacitor 26a is greater than the preset voltage value; the position of the supporting member 25b supporting the wafer 22 is also When correct, the second voltage value detected by the second capacitor 26b is also greater than the preset voltage value. The first voltage value and the second voltage value compared by the comparator 28 are the same as the return voltage. Therefore, the comparator 2 8 does not output a control signal to the interlocking device 29, so the robot arm 2 4 can smoothly remove the wafer 2 2. In the second state described in Table 1, the position of the wafer 22 is shifted by I, and the position of the supporting member 25 is located at the first position. When the supporting member 25a holds the wafer 22 in the correct position When the first voltage value detected by the first capacitor 26a is greater than the preset voltage value; when the position of the supporting member 25b supporting the wafer 22 is incorrect, the second voltage value detected by the second capacitor 26b is less than the preset voltage value. The first voltage value compared by the comparator 28 is a high voltage, and the second voltage is
515022 t、發明說明（8) I值為低電壓，當兩者其中有任一為低電壓時，比較器28 會輸出控制訊號至互鎖裝置29，1鎖裝置29控制機器‘臂 2 4不動4乍’因此機器手臂2 4無法取下晶圓2 2。 & nr 2表+所述之第三種狀態，在晶圓22位置偏移1 1的狀 ^ ’ a撐構件25之位置位於第一位置，當支撐構件 253撐起曰曰圓22的位置不正確時，第一電容26a谓測出之第 二小於預設電壓值；支撐構件25b樓起晶圓22的位 石日L L f二電容26b偵測出之第二電壓值大於預設電 5你糸：：器28所比較之第一電壓值為低電壓，而第二電 i认1同“壓，當兩者其中有任一為低電壓時，比較器28 訊號至互鎖裝置29，&鎖裝置29控制機器手臂 24不動作，因此機器手臂24無法取下晶圓22。 妝能Ϊ 5，戶f ί之第四種狀態，在晶圓22位置偏移1 11的 ^ ^ 每構件2 5之位置位於第一位置，當支撐構件 預設電壓值時。比較心所比A出之第二電壓值亦小於 %平乂态W所比較之第一電 值同為低電壓，當兩者其中有任一 弟一電反 會輸出控制訊號至互鎖裝置29 鉍厂堊柃’比較器28 24不動作，因此機器手 1二；；ΐ置29控制機器手臂 月乙4播凌取下晶圓22。 如表一所述之第五藉妝能，+ ，支她25之位置位於第：位f晶圓22損壞的狀態下時 損壞至破裂的情況，所以支撐構，f為晶圓22有可能是 又存構件25無法將晶圓22撐起。515022 t. Description of the invention (8) I value is low voltage. When either of them is low voltage, the comparator 28 will output control signal to the interlocking device 29. The 1 locking device 29 controls the machine's arm 2 4 does not move 4 'so the robot arm 2 4 cannot remove the wafer 2 2. & nr 2 The third state described in Table +, the position of wafer 22 is shifted 11 1 ^ 'a support member 25 is located in the first position, when the support member 253 supports the position of the circle 22 When it is incorrect, the first capacitor 26a means that the second measured voltage value is less than the preset voltage value; the second voltage value detected by the capacitor 26b detected by the capacitor 26b on the wafer 22 of the supporting member 25b is greater than the preset voltage 5 You: The first voltage value compared by the comparator 28 is low voltage, and the second voltage is the same as the "voltage. When either of them is low voltage, the comparator 28 signals to the interlock device 29. & The lock device 29 controls the robot arm 24 not to move, so the robot arm 24 cannot remove the wafer 22. The makeup state is 5, the fourth state of the household, and the position of the wafer 22 is shifted by 1 11 ^ ^ per The position of the component 25 is in the first position, when the preset voltage value of the supporting component is compared. The second voltage value of the comparison center A is also less than%. The first electrical value compared with the normal state W is also a low voltage. Either of them will output the control signal to the interlocking device. Set 29 to control the robotic arm 4 to take off the wafer 22. As described in Table 1, the fifth borrowing ability, +, support her position 25 when the wafer 22 is damaged. Damaged to cracked condition, so the support structure, f is the wafer 22, and there may be additional components 25 that cannot support the wafer 22.
)503-6714TWf;TSMC2001-0580;Claire.ptd $ 11頁 五、發明說明（9) 二^撐構件25a撐起晶圓22，不論撐起的位置是否 田撐構件2 5b無法撐起晶圓22時，晶圓22、支撐構件2 心：第容26:;法構成-完整迴路，所以第-電容= 為0 ^ 電壓值及第一電容26b偵測出之第二電壓值 會同為低=/ ^28所比較之第—電壓值與第二電屢值都 I :&電壓，當兩者其中有任一為低電壓時，比較 互鎖裝置29，互鎖裝置29控制機器；臂 一乍因此機器手臂2 4無法取下晶圓2 2。 妝r : ?地’如表一所述之第五種狀態，在晶圓22損壞的 有，支撐構件25之位置位於第一位置，因為晶圓22 22撐’所以支撐構件25無法將晶圓 曰 牙&日日圆“時，.不淪撐起的位置是否正 路，：Γ笛 構件25、及電容26無法構成一完整迴 谓測=:=26“貞測出之第一電壓值及第二電容26b =;第二電壓值都會同為低電壓，當8:者比其 比較器28會輸出控制訊號至互鎖裝置29，互 下^22 器手臂24不動作，因此機器手臂24無法取 狀態；：地支Ξ J :: : f第五種狀態’在晶圓22損壞的 有可是f^ 位置位於第一位置，因為晶圓22 22撐ί Ϊίί 情況、’/斤以支撐構件25無法將晶圓 種情況，當支撐構件25β及25b都沒有撐 第12頁 0503-6714TWf;TSMC2001-0580；C1ai re.ptd 515022 五、發明說明（ίο) 起晶圓22時，晶圓22、支撐構件25、 完整迴路，所以第一電容26 # 、及電容26無法構成一 電繼她之第二電壓二出之第-電麗值及第二 之第-電值與第二電麼值都會同為較；m 有任一為低電壓時，比較器28會輪 田兩者中 29，互鎖裝置29控制機器手臂24=;制幻虎至互鎖裝置 無法取下晶圓22。 不動作，因此機器手臂24 定本本=ί佳實施例揭露如1，然其並非用以限 】Ϊ 此項技藝者，在不脫離本發明之精神 二：附Π:ί許更動請，因此本發明之保護範 圍田視後附之申清專利範圍所界定者為準。 0503-6714TWf;TSMC2001-0580;Claire.ptd 第13頁503-6714TWf; TSMC2001-0580; Claire.ptd $ 11. Page 5 V. Description of the Invention (9) The second support member 25a supports the wafer 22, regardless of whether the support position is the field support member 2 5b or not. At the time, the wafer 22 and the support member 2 are centered: the first capacitor 26 :; the method constitutes a complete circuit, so the first capacitor = 0 ^ voltage value and the second voltage value detected by the first capacitor 26b will both be low = / ^ 28 The first voltage value and the second electrical value are both I: & voltage. When either of them is low voltage, the interlocking device 29 is compared. The interlocking device 29 controls the machine; Therefore, the robot arm 2 4 cannot remove the wafer 2 2. Makeup r: "ground" as described in the fifth state in Table 1, when the wafer 22 is damaged, the position of the support member 25 is located in the first position, because the wafer 22 22 is supported, the support member 25 cannot support the wafer "Tooth & Japanese yen", is the position of the indestructible support right ?: The Γ flute member 25 and the capacitor 26 cannot form a complete reverberation test =: = 26 The two capacitors 26b =; the second voltage value will be the same low voltage. When 8: the comparator 28 will output a control signal to the interlocking device 29, and the two arms 22 will not move, so the robot arm 24 cannot take it. State :: Earth support :: J ::: f Fifth state 'the wafer 22 is damaged, but the position f ^ is located in the first position because the wafer 22 22 supports Ϊ Ϊίί', and / In the case of wafers, when the support members 25β and 25b are not supported, page 12 0503-6714TWf; TSMC2001-0580; C1ai re.ptd 515022 V. Description of the invention (ί) When the wafer 22 is started, the wafer 22 and the support member 25 , The complete circuit, so the first capacitor 26 # and the capacitor 26 cannot constitute an electric relay following her second voltage. The first-electrical value and the second-electrical value are compared with the second electrical value; when any of m is a low voltage, the comparator 28 will round 29 of the two, and the interlocking device 29 controls the machine. Arm 24 =; Magic Tiger to Interlock cannot remove wafer 22. No action, so the robotic arm's 24 books = the best embodiment is disclosed as 1, but it is not intended to limit it] 者 This artisan does not depart from the spirit of the present invention 2: attached The scope of protection of the invention shall be determined by the scope of the patent claims attached to it. 0503-6714TWf; TSMC2001-0580; Claire.ptd Page 13