KR101862605B1 - Oganic electro-luminesence display panel and manufactucring method of the same - Google Patents

Abstract

The present invention relates to an organic light emitting display panel capable of increasing efficiency while suppressing a color shift phenomenon depending on a viewing angle, and a method of manufacturing the same, wherein the gate line, the data line and the power supply line are crossed to form red, green, A first electrode connected to the driving thin film transistor; an organic common layer formed on the first electrode; and a second electrode formed on the organic electroluminescent element. An organic electroluminescent device and an optical compensation layer formed in at least one of the green and blue sub pixel regions and compensating a color shift according to a color viewing angle formed in the white sub pixel region.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic electroluminescence display panel and an organic electroluminescent display panel,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display panel and a method of manufacturing the same, and more particularly, to an organic light emitting display panel and a method of manufacturing the same, which can increase efficiency while suppressing a color shift phenomenon depending on a viewing angle.

The image display device that realizes various information on the screen is a core technology of the information communication age and it is becoming thinner, lighter, more portable and higher performance. An organic light emitting display device for displaying an image by controlling the amount of light emitted from the organic light emitting layer by using a flat panel display capable of reducing weight and volume, which is a disadvantage of a cathode ray tube (CRT), has attracted attention. An organic light emitting display (OLED) is a self-luminous element using a thin light emitting layer between electrodes and has an advantage that it can be thinned like a paper. The organic light emitting display OLED is divided into an active matrix OLED (PMOLED) and a passive matrix OLED (AMOLED).

At this time, the active matrix OLED (AMOLED) displays images by arranging pixels composed of three color (R, G, B) sub-pixels in a matrix form. Each sub-pixel includes an organic electroluminescent element and a cell driver for driving the organic electroluminescent element. The cell driver includes at least two thin film transistors and a storage capacitor connected between a gate line for supplying a scan signal, a data line for supplying a video data signal, and a common power supply line for supplying a common power supply signal, As shown in Fig.

As shown in FIG. 1, a color shift phenomenon occurs in the organic electroluminescent device as shown in FIG. 2 due to the difference in intensity of blue and yellow-green depending on the viewing angle .

The present invention has been made to solve the above problems, and it is an object of the present invention to provide an organic light emitting display panel and a method of manufacturing the same, which can increase the efficiency while suppressing the color shift phenomenon according to the viewing angle.

For this, the organic light emitting display panel according to the present invention includes a driving thin film transistor formed in each of the red, green, blue and white sub pixel regions so as to cross the gate line, the data line and the power source line, An organic electroluminescent device having a first electrode, an organic common layer formed on the first electrode, and a second electrode formed on the organic electroluminescent device; And an optical compensation layer formed on the white sub-pixel region to compensate for a color shift according to a color viewing angle.

G, and B formed to correspond to the red, green, and blue sub-pixel regions, respectively, on the organic passivation layer formed on the driving thin film transistors formed in the red, green, A color filter, and an overcoat layer formed on the R, G, and B color filters.

The optical compensation layer may be formed of an organic material, an inorganic material, or an organic metal compound.

In addition, the optical compensation layer is characterized by being composed of one layer of TiOx, SiNx, SiO _2, TaO _2, NIOx, MgF, CaF or, formed of at least two layers.

The total thickness of the optical compensation layer, the first electrode, and the organic common layer may be in the range of 5000 to 5500 angstroms.

A method of fabricating an organic light emitting display panel according to the present invention includes the steps of forming a driving thin film transistor in each of red, green, blue and white sub pixel regions formed so as to intersect a gate line, a data line and a power supply line, Forming a first electrode connected to the driving thin film transistor, forming an organic layer on the first electrode, forming a second electrode connected to the driving thin film transistor on the first electrode, A step of forming a common layer, and a step of forming a second electrode on the organic common layer.

The method of claim 1, further comprising: forming an organic passivation layer on the driving TFTs of the red, green, blue, and white sub-pixel regions, respectively; forming red, green, and blue sub- B color filter, and forming an overcoat layer on the R, G, and B color filters.

The optical compensation layer may be formed of an organic material, an inorganic material, or an organic metal compound.

In addition, the optical compensation layer is made or as one layer of TiOx, SiNx, SiO _2, TaO _2, NIOx, MgF, CaF, characterized by forming at least two layers.

The total thickness of the optical compensation layer, the first electrode, and the organic common layer may be 5000 to 5500 ANGSTROM.

The organic light emitting display panel of the present invention has an optical compensation layer formed in each of the G, B, and W sub pixel regions to suppress the color shift phenomenon according to the viewing angle, while preventing the optical compensation layer from being formed in the R sub pixel region, And the driving voltage can be reduced.

1 is a graph showing the intensities of blue (B) and yellow-green (YG) according to viewing angles.
2 is a graph showing a color shift phenomenon according to a viewing angle.
3A to 3D are equivalent circuit diagrams for R, G, and B sub pixel regions according to the present invention.
FIG. 4 is a cross-sectional view of the organic light emitting display panel according to the R, G, and B sub pixel regions shown in FIGS.
5 is a graph showing EM peaks according to the case where the optical compensation layer is formed in the R sub pixel region and EM peaks according to the case where the optical compensation layer is not formed in the R sub pixel region.
6 is a graph showing a change in current density with respect to a driving voltage.
FIGS. 7A to 7F are cross-sectional views illustrating a method of fabricating an organic light emitting display panel according to an embodiment of the present invention shown in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The configuration of the present invention and the operation and effect thereof will be clearly understood through the following detailed description. Before describing the present invention in detail, the same components are denoted by the same reference symbols as possible even if they are displayed on different drawings. In the case where it is judged that the gist of the present invention may be blurred to a known configuration, do.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 3 to 7E.

3A to 3D are equivalent circuit diagrams for the R, G, and B sub pixel regions according to the present invention, and FIG. 4 is an equivalent circuit diagram of the organic light emitting display panel according to the R, G, Fig.

3A to 3D, an organic light emitting display panel according to an exemplary embodiment of the present invention includes a plurality of sub pixel regions formed at intersections of a gate line GL, a data line DL, and a power source line PL .

The R, G, B, and W sub-pixel regions are arranged in a matrix form to display an image. The sub-pixel region includes an R sub-pixel region, a G sub-pixel region, a B sub-pixel, and a W sub-pixel region. As shown in FIG. 3A, the plurality of sub-pixel regions may be arranged in a line-by-a-row arrangement in a line-by-row manner with the gate lines, and the row, And may be arranged in a row of 4 rows X 1 columns in parallel with the data lines. R, G, B, and W sub pixel areas, but the arrangement order may not be limited because it may be arranged in the order of R, B, G, and W sub pixel areas or in the order of W, R, G, It can be changed according to the needs of the user.

In addition, the R, B, G, and W sub-pixel regions may be arranged in two rows and two columns as shown in Figs. 3C and 3D. For example, as shown in FIG. 3C, the R sub-pixel region includes a first i-th data line DL2i-1 and a (2i-1) th gate line GL2i-1, Th sub-pixel region is formed in the intersection region of the (i-1) -th gate line GL2i-1 and the (2i-1) th data line DL2i, Th data line DL2i-1 and the second i-th gate line GL2i, and the W sub-pixel region is formed in the intersection region of the second i-th data line DL2i and the second i-th gate line GL2i .

As shown in FIG. 1D, the R sub-pixel region is formed at the intersection of the (DL2i-1) th data line and the (2i-1) th gate line GL2i-1, The pixel region is formed in the intersection region of the (2i) -th data line DL2i and the (2i-1) th gate line GL2i-1, Th second gate line GL2i and the W sub pixel region may be formed in an intersection region of the second i-th data line DL2i and the second i-th gate line GL2i.

Each of the R, G, B, and W sub pixel regions includes a cell driver 200 and an organic electroluminescent device connected to the cell driver 200.

The cell driver 200 includes a switch thin film transistor TS connected to the gate line GL and the data line DL, a switch thin film transistor TS and a power line PL and a first electrode of the organic electroluminescent device And a storage capacitor C connected between the power supply line PL and the drain electrode 110 of the switch thin film transistor TS.

The gate electrode of the switch thin film transistor TS is connected to the gate line GL and the source electrode thereof is connected to the data line DL while the drain electrode is connected to the gate electrode of the driving thin film transistor TD and the storage capacitor C . The source electrode of the driving thin film transistor TD is connected to the power supply line PL and the drain electrode 110 is connected to the first electrode 122. [ The storage capacitor C is connected between the power supply line PL and the gate electrode of the driving thin film transistor TD.

The switch thin film transistor TS is turned on when a scan pulse is supplied to the gate line GL to supply the data signal supplied to the data line DL to the gate electrode of the storage capacitor C and the drive thin film transistor TD do. The driving thin film transistor TD controls the amount of light emitted from the organic electroluminescent device by controlling the current I supplied from the power supply line PL to the organic electroluminescent device in response to a data signal supplied to the gate electrode. Even if the switch thin film transistor TS is turned off, the driving thin film transistor TD supplies the constant current I until the data signal of the next frame is supplied by the voltage charged in the storage capacitor C, Thereby causing the electroluminescent element to maintain luminescence.

The driving thin film transistor TD includes a gate electrode 102 on the substrate 100, a drain electrode 110 connected to the first electrode 122 of the organic electroluminescent device, a drain electrode 110 An active layer 114 formed to overlap the gate electrode 102 with the gate insulating film 112 sandwiched therebetween and forming a channel between the source electrode 108 and the drain electrode 110, And an ohmic contact layer 116 formed between the active layers 114 except for the channel region for ohmic contact with the source electrode 108 and the drain electrode 110. An organic passivation layer 118 of an organic insulating material is formed on the driving thin film transistor TD to planarize the substrate 100 on which the driving thin film transistor is formed. Alternatively, the protective film on the driving thin film transistor (TD) may be formed of an organic protective film formed of an inorganic insulating material and an organic protective film formed of an organic insulating material.

The organic electroluminescent device includes a first electrode 122 connected to the drain electrode 110 of the driving thin film transistor TD and a bank insulating film 130 formed with a bank hole 132 for exposing the first electrode 122, An organic common layer 134 on the first electrode 122 and a second electrode 136 formed on the organic common layer 134 are provided.

The first electrode 122 may be a transparent conductive electrode such as a transparent conductive oxide (TCO), an indium tin oxide (ITO), or an indium zinc oxide (IZO) . The second electrode 136 is a cathode and is formed of a reflective metal material such as aluminum (Al). As shown in FIG. 4, the present invention can emit backlight, but it may emit back, front, or both sides depending on the material of the first and second electrodes 122 and 136.

The organic common layer 134 may include a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) are sequentially stacked. At this time, the light emitting layer is formed by doping a host with a phosphorescence yellow-phosphorescence green or by doping two hosts with a phosphorescent yellow-green dopant.

When a voltage is applied between the first electrode 122 and the second electrode 136, holes are injected from the first electrode 122 into the second electrode 136, The excitons are recombined in the light emitting layer to generate exits. The excitons fall to the ground state, and light is emitted to the bottom.

In the color filter, an R color filter 124R is formed on the protective film of the R sub pixel area to emit red (R), and a G color filter 124G is formed on the protective film of the G sub pixel area to generate green A B color filter 124B is formed on the protective film of the B sub pixel area to emit blue light B and a color filter is not formed on the protective film of the W sub pixel area and white light W is emitted. Further, an overcoat layer 126 is formed on each of the R, G, and B color filters 124R, 124G, and 124B for planarization.

The optical compensation layer 128 is formed of an organic or inorganic or organic metal compound between the overcoat layer 126 and the first electrode 122 for improving the viewing angle. As shown in FIG. 2, the optical compensation layer 128 is not formed in the R sub-pixel region but may be formed in the G sub-pixel region, the B sub-pixel region, and the W sub-pixel region. At this time, the optical compensating layer 128 must be formed in the W sub pixel area, and it can be formed in at least one of the G sub pixel area and the B sub pixel area. However, in the R sub-pixel region, the driving voltage of the organic electroluminescent device must be lowered and the optical compensation layer should not be formed in order to increase the efficiency. The description will be made later with reference to Figs. 5 and 6, [Table 1] and [Table 2].

To the optical compensation layer 128 material is made or with a layer of _{TiOx, SiNx, SiO 2, TaO} 2, NIOx, MgF, CaF, can be formed by at least two layers. The total thickness of the optical compensating layer 128, the first electrode 122, and the organic common layer 134 is in the range of 5000 to 5500 ANGSTROM, and the thickness thereof should satisfy the following formula (1).

In Equation (1), n denotes a refractive index, d denotes a thickness, and? Denotes a blue peak wavelength.

5 is a graph showing EM peaks according to the case where the optical compensation layer is formed in the R sub pixel region and EM peaks according to the case where the optical compensation layer is not formed in the R sub pixel region. 6 is a graph showing a change in current density with respect to a driving voltage.

First, the emission peak (EL peak) of the organic luminescent electroluminescent element is determined by a photoluminescence peak (PL peak) indicating an intrinsic color of each luminescent layer material and an organic EL layer (Hereinafter referred to as " EM peak ").

In view of the viewing angle, the PL peak of the light emission and the peak of the EM peak of the organic laminate match, or the viewing angle characteristic is improved when the EM peak is in a shorter wavelength than the PL peak. This applies to both Blue PL Peak and Yellow-Green Peak.

As shown in FIG. 1, a color shift phenomenon occurs as shown in FIG. 2 due to the difference in intensity of blue and yellow-green depending on the viewing angle. Accordingly, an optical compensation layer is formed in each of the R, G, B, and W sub pixel regions to move the EM peak in the short wavelength direction to match the PL peak and the EM peak. Thus, by forming the optical compensation layer, color shift can be suppressed and the color viewing angle characteristics can be improved.

However, when the optical compensation layer is formed in the R, G, B, and W sub-pixel regions, the characteristic of the color viewing angle is improved. However, as the EM peak shifts to a short wavelength, the intensity of red, which is a long wavelength region, decreases. As a result, the efficiency of the R sub-pixel region is reduced.

Therefore, by not forming the optical compensation layer in the R sub-pixel region of the present invention, the efficiency is increased and the driving voltage is reduced. This will be described with reference to FIGS. 5 and 6. FIG.

FIG. 5 is a graph according to the present invention applied to the G, B, and W sub pixel regions except for the R sub pixel region, and a graph according to the display device in which the optical compensation layer is applied to all the R, G, B, and W sub pixel regions FIG.

Specifically, the first curve 20 represents the case where the thickness of the optical compensation layer is 1200 Å in the R, G, B, and W sub pixel regions, the second curve 22 represents the case where the thickness of the optical compensation layer is 1600 Å G, B and W sub-pixel regions, and the third curve 24 represents the case where the thickness of the optical compensation layer is formed in all the R, G, B, and W sub pixel regions at 2400 angstroms. 4 curve 26 is a graph showing a case where the optical compensating layer is formed in the remaining G, B, and W sub pixel areas, not in the R sub pixel area.

5, the first to third curved lines 20, 22, and 24 are formed in the R, G, B, and W sub-pixel regions, respectively. It can be seen that the intensity of the EM peak is reduced. However, since the present invention (the fourth curve 26) does not form the optical compensation layer in the R sub pixel area, it can be seen that the intensity of the EM peak in the R sub pixel area is not reduced.

[Table 1] and [Table 2] show a comparative example according to the case where the optical compensation layer is formed in the R sub pixel area and a comparative example according to the embodiment of the present invention according to the case where the optical compensation layer is not formed in the R sub pixel area .

Comparative Example
(In the R, G, B, and W sub pixel areas Optical compensation layer  All formed) Red Optical compensation layer  remove( Invention ) R G B W Total / Ave . R G B W Total / Ave . White  efficiency ( CD / A) 5.65 29.97 2.67 69.98 6.55 29.97 2.67 69.98 panel Luminance ( CD / m2) 3.0 4.0 2.9 43.1 53.0 3.0 4.0 2.9 43.1 53.0 Panel current (A) 1.04 0.27 2.15 1.22 4.68 0.90 0.27 2.15 1.22 4.53 Current density ( mA / cm2 ) 1.56 0.40 2.15 1.22 1.33 1.34 0.40 2.15 1.22 1.28 Current ratio 0.48 0.12 1.00 0.57 0.42 0.12 1.00 0.57 Panel efficiency 5.9 8.0 5.7 85.6 22.5 5.9 8.0 5.7 85.6 23.2

Comparative Example
(In the R, G, B, and W sub pixel areas Optical compensation layer  All formed) Red Optical compensation layer  Removal (invention) CD / A 5.60 6.55 Current (w Pol .) 36.446 31.160 pixel Star current uA ) 17.576 15.027 Current density ( mA / cm2 ) 43.704 37.365 Voled  (V) 8.1 7.9

As shown in Table 1 and Table 2, the efficiency of the comparative example is 5.6 (cd / A) and the efficiency according to the embodiment of the present invention is 6.55 (cd / A) 6.55 (cd / A).

In addition, as shown in [Table 1], [Table 2] and Fig. 6, the driving voltage of the comparative example is 8.1 (V) The driving voltage of the embodiment of the present invention is reduced by 0.2 (V).

As described above, according to the present invention, the optical compensation layer is formed in the G, B, and W sub-pixel regions to suppress the color shift according to the viewing angle, and the efficiency is increased by not forming the optical compensation layer in the R sub- Respectively.

In view of the panel efficiency, the panel efficiency is maximized when the EM peak and the PL peak are maximally matched. Therefore, the total thickness of the optical compensation layer 128, the first electrode 122, and the organic common layer 134 Should be formed to have a range of 5000 to 5500 ANGSTROM. The numerical values are optimal values considering the efficiency of the device and the viewing angle characteristics

7A to 7E are cross-sectional views illustrating a method of manufacturing an organic light emitting display panel according to an embodiment of the present invention shown in FIG.

7A, a driving thin film transistor including a gate electrode 106, a gate insulating film 112, a semiconductor pattern 115, a source electrode 108, and a drain electrode 110 is formed on a substrate 100 .

Specifically, a gate metal layer is formed on the substrate 100 through a deposition method such as a sputtering method. The gate metal layer is used as a metal material such as Mo, Ti, Cu, AlNd, Al, Cr, Mo alloys, Cu alloys, Al alloys, Mo-Ti alloys, Subsequently, the gate metal layer is patterned by the photolithography process and the etching process, thereby forming the gate electrode 102.

An inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) is formed on the entire surface of the substrate 100 on which the gate electrode 102 is formed, thereby forming the gate insulating film 112. Then, an amorphous silicon layer and an amorphous silicon layer doped with impurities (n + or p +) are sequentially formed on the substrate 100 on which the gate insulating film 112 is formed. Subsequently, the amorphous silicon layer doped with the amorphous silicon layer and the impurity (n + or p +) is patterned by the photolithography process and the etching process, thereby forming the semiconductor pattern 115 including the active layer 114 and the ohmic contact layer 116 .

Thereafter, a data metal layer is formed on the substrate 100 on which the semiconductor pattern is formed through a deposition method such as a sputtering method. The data metal layer is made of titanium (Ti), tungsten (W), aluminum (Al), molybdenum (Mo), copper (Cu) Then, the source metal layer 108 and the drain electrode 110 are formed by patterning the data metal layer by a photolithography process and an etching process. Then, the active layer 114 is exposed by removing the ohmic contact layer 116 located between the source electrode 108 and the drain electrode 110 as a mask.

As described above, since the semiconductor pattern 115 and the source and drain electrodes 108 and 110 are formed separately, two masks are required to form them. In addition, to reduce the number of masks, the semiconductor pattern 115 and the source and drain electrodes 108 and 110 can be simultaneously formed through a single mask process using a diffraction mask or a semi-transmission mask.

7B, the organic protective layer 118 is formed on the substrate 100 on which the source and drain electrodes 108 and 110 are formed, and the R, G, and B color filters 124R, 124G, Respectively.

Specifically, an organic insulating material such as an acrylic resin is formed on the entire surface of the substrate 100 on which the source and drain electrodes 108 and 110 are formed, thereby forming the organic passivation layer 118. Subsequently, a red color resist with red (R) color is applied, and then a red color filter 124R is formed on the organic protective film 118 in the R sub pixel area by a photolithography process and an etching process. Thereafter, a green color filter 124G colored green (G) is applied, and then a green color filter 124G is formed on the organic protective film 118 in the G sub pixel region by a photolithography process and an etching process. After the blue color resist with blue (B) color is applied, a blue color filter 124B is formed on the organic protective film 118 in the B sub pixel area by a photolithography process and an etching process. Thus, R, G, and B color filters 124R, 124G, and 124B are formed in the R, G, and B sub pixel regions, respectively.

7C, an overcoat layer 126 is formed on a substrate 100 on which R, G and B color filters 124R, 124G and 124B are formed, and an overcoat layer 126 is formed on each of the G, (128) are formed.

Specifically, the overcoat layer 126 is formed of an organic insulating material such as acrylic resin on the substrate on which the R, G, and B color filters 124R, 124G, and 124B are formed. An optical compensation layer 128 is then formed by applying over the organic or inorganic or organic metal compound on the overcoat layer 126. An optical compensation layer 128 is made or as one layer of _{TiOx, SiNx, SiO 2, TaO} 2, NIOx, MgF, CaF, can be formed by at least two layers. The total thickness of the light compensation layer 128, the first electrode 122, and the organic common layer 134 is formed to be in the range of 5000 to 5500 ANGSTROM.

The overcoat layer and the optical compensation layer are patterned by a photolithography process and an etching process to form a pixel contact hole exposing the drain electrode of the driving thin film transistor in the corresponding sub pixel area. A compensation layer is formed. Further, the optical compensation layer can be formed in at least one of the G sub pixel region and the B sub pixel region, and is formed in the W sub pixel region.

Referring to FIG. 7D, a first electrode 122 is formed on a substrate 100 having an optical compensation layer 128 formed thereon.

A transparent conductive oxide (TCO), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide (ITO) and the like are deposited on a substrate 100 on which an organic protective layer 126 is formed by a deposition method such as a sputtering method. Oxide (IZO)) is formed on the surface of the substrate. Then, the first electrode 122 is formed by patterning a transparent metal material by a photolithography process and an etching process.

Referring to FIG. 7E, a bank insulating film 130 having a bank hole 132 is formed on a substrate 100 having a first electrode 122 formed thereon.

Specifically, a bank insulating film formed of an organic insulating material such as photoacryl is coated on the substrate on which the first electrode is formed. Subsequently, the bank insulating film is patterned by the photolithography process and the etching process, thereby forming the bank insulating film having the bank holes in which the first electrode is exposed.

7F, the organic common layer 134 is formed on the substrate 100 on which the bank insulating layer 130 is formed, and the second electrode 136 is formed on the organic common layer 134.

Specifically, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), a light emitting layer An organic common layer 134 including an electron injection layer (EIL) is formed. Then, silver (Ag) is deposited on the organic common layer 134 to form the second electrode 136.

The foregoing description is merely illustrative of the present invention, and various modifications may be made by those skilled in the art without departing from the spirit of the present invention. Accordingly, the embodiments disclosed in the specification of the present invention are not intended to limit the present invention. The scope of the present invention should be construed according to the following claims, and all the techniques within the scope of equivalents should be construed as being included in the scope of the present invention.

100: substrate 102: gate electrode
108: source electrode 110: drain electrode
112: gate insulating film 114: active layer
116: buffer film 118: organic protective film
120: pixel contact hole 122: first electrode
124R, 124G, and 124B: Red, green, and blue color filters
128: optical compensation layer 130: bank insulating film
132: bank hole 134: organic common layer
136: Second electrode

Claims (10)

Driving thin film transistors located on the red, green, blue and white sub pixel regions;
An overcoat layer disposed on the driving thin film transistors;
An overcoat layer disposed over the overcoat layer and overcoat layer overlying the overcoat layer; And
An organic light emitting layer disposed on the optical compensation layer and including first electrodes connected to the driving thin film transistor, an organic common layer positioned on the first electrodes, and a second electrode located on the organic common layer, Device,
And the emissive peaks (EM peaks) of the green, blue, and white sub-pixel regions are shifted in the short wavelength direction by the optical compensation layer. The method according to claim 1,
An organic passivation layer disposed between the driving thin film transistors and the overcoat layer; And
And an R, G, and B color filters disposed between the organic passivation layer and the overcoat layer and corresponding to the red, green, and blue sub-pixel regions, respectively. delete The method according to claim 1,
The optical compensation layer is _{TiOx, SiNx, SiO 2, TaO} 2, the organic light emitting display panel comprises a layer made of one of NIOx, MgF, CaF. The method of claim 1, wherein
Wherein the total thickness of the optical compensation layer, the first electrode, and the organic common layer is 5000 to 5500 ANGSTROM. Forming a driving thin film transistor in each of the red, green, blue and white sub pixel regions formed so as to cross the gate line, the data line and the power source line;
Forming an overcoat layer on the driving thin film transistors of each of the red, green, blue and white sub pixel regions;
Forming an optical compensation layer on the overcoat layer;
Removing the optical compensation layer formed on the red sub pixel region;
Forming first electrodes connected to the driving thin film transistor in each sub pixel region on the overcoat layer and the optical compensation layer;
Forming an organic common layer on the first electrodes;
And forming a second electrode on the organic common layer,
Wherein the emissive peaks (EM peaks) of the green, blue, and white sub-pixel regions are shifted in the short wavelength direction by the optical compensation layer. The method according to claim 6,
Forming an organic passivation layer between the driving thin film transistor of each of the red, green, blue and white sub pixel regions and the overcoat layer;
And forming an R, G, and B color filter between the organic passivation layer and the overcoat layer to correspond to the red, green, and blue sub-pixel regions, respectively. delete The method according to claim 6,
The optical compensation layer is _{TiOx, SiNx, SiO 2, TaO} 2, NIOx, MgF, method of manufacturing an organic light emitting display panel comprises a layer made of one of CaF. The method according to claim 6,
Wherein the total thickness of the optical compensation layer, the first electrode, and the organic common layer is in the range of 5000 to 5500 ANGSTROM.

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