KR101274801B1 - A organic electro-luminescence display device and a method for fabricating the same - Google Patents

Abstract

The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device and a method of manufacturing the same, which can simplify a process and extend a lifetime. The disclosed organic light emitting display device includes: first and second substrates spaced apart from each other by a predetermined distance; An array element having at least one thin film transistor formed on the first substrate in units of subpixels; A first electrode formed on the second substrate; A barrier layer formed of a first buffer and a second buffer formed in an outer region dividing each subpixel on the first electrode; An organic light emitting layer formed in each subpixel region partitioned by the partition layer; A second electrode formed on a second substrate on which the organic light emitting layer is formed; And a conductive spacer electrically connecting the thin film transistor on the first substrate and the second electrode on the second substrate corresponding to each subpixel, wherein second buffers are positioned on both sides of the first buffer, respectively. And an under cut structure between the first buffer and each second buffer.

The present invention has the effect of extending the life of the organic electroluminescent layer by patterning the partition wall separating the organic electroluminescent layer with an inorganic material.

Organic field, display, buffer, bulkhead, electrode

Description

Organic light emitting display device and manufacturing method thereof {A ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND A METHOD FOR FABRICATING THE SAME}

1 is a schematic cross-sectional view of a conventional organic light emitting display device.

2 is a cross-sectional view of a pixel of an organic light emitting display device according to an exemplary embodiment of the present invention.

3 is an enlarged cross-sectional view of region A of the upper plate of FIG. 2.

4A through 4E are cross-sectional views illustrating a top plate manufacturing process of an organic light emitting display device according to an exemplary embodiment of the present invention.

Description of the Related Art [0002]

101: transparent substrate 130: second substrate

132: first electrode 136: organic electroluminescent layer

138: second electrode 140: auxiliary electrode

139: sacrificial pattern 150: first buffer

151: second buffer 160: space

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device and a method of manufacturing the same, which can simplify a process and extend a lifetime.

Recently, various flat panel displays have been developed to reduce weight and volume, which are disadvantages of cathode ray tubes. Such flat panel displays include a liquid crystal display, a field emission display, a plasma display panel, an electroluminescence display, and the like.

Recently, studies are being actively conducted to increase the display quality of such a flat panel display device and to attempt to make a large screen. Among these, the electroluminescent display device is a self-luminous element that emits light by itself. The electroluminescent display displays a video image by exciting a fluorescent material using carriers such as electrons and holes. The electroluminescent display is largely divided into an inorganic electroluminescent display and an organic electroluminescent display according to the material used. The organic electroluminescent display is driven at a lower voltage of about 5 to 20 volts than the inorganic electroluminescent display requiring a high voltage of 100 to 200 volts, thereby allowing direct current low voltage driving.

In addition, the organic electroluminescent display device has excellent features such as wide viewing angle, high response speed, high contrast ratio, and the like, so that the pixel of a graphic display, a television image display, or a surface light source can be used. It can be used as a pixel, and is suitable as a next-generation flat panel display because it is thin, light, and has good color.

On the other hand, a passive matrix type (Passive matrix type) that does not have a separate thin film transistor is mainly used as a driving method of such an organic light emitting display device.

However, since the passive matrix method has many limited factors such as resolution, power consumption, and lifespan, active matrix type electroluminescent display devices for manufacturing next-generation displays requiring high resolution and large screens have been researched and developed.

Hereinafter, a conventional organic light emitting display device will be described in detail with reference to the accompanying drawings.

1 is a schematic cross-sectional view of a conventional organic light emitting display device, which shows a cross-sectional structure of an AMOLED operating in a bottom emission method.

For convenience of description, the pixel area is illustrated based on one pixel area including red, green, and blue B subpixels.

As shown in the drawing, a thin film transistor T and a first electrode 12 are formed on each of the sub-pixels on the transparent substrate 1 of the first substrate 10, and the thin film transistor T and the first electrode ( 12) An organic light emitting layer 14 having red, green, and blue colors is formed on the top, and a second electrode 16 is formed on the organic light emitting layer 14. have. The first and second electrodes 12 and 16 serve to apply an electric field to the organic light emitting layer 14.

As such, the first substrate 10 on which the organic light emitting layer 14 is formed is bonded to the second substrate 30.

For example, when the first electrode 12 is an anode and the second electrode 16 is a cathode in a bottom emission structure, the first electrode 12 is selected from a transparent conductive material. The second electrode 16 is selected from a metal material having a low work function, and under such conditions, the organic electroluminescent layer 14 is formed from a layer in contact with the first electrode 12 by a hole injection layer 14a, A hole transport layer 14b, an emission layer 14c, and an electron transport layer 14d are stacked in this order.

In this case, the light emitting layer 14c has a structure in which light emitting materials for implementing red, green, and blue colors are sequentially disposed for each subpixel.

As described above, the conventional organic light emitting display device has a structure in which an array element including a thin film transistor T and an electrode and an organic light emitting diode are stacked on the same substrate.

However, the conventional organic light emitting display device of the conventional bottom emission method described above manufactures a device by bonding the substrate on which the array device and the organic light emitting diode are formed and a separate encapsulation substrate. Since the product of the yield and the yield of the organic light emitting diode determines the yield of the organic light emitting diode, there is a problem that the overall process yield is greatly limited by the organic electroluminescent diode process corresponding to the latter process. For example, even if the array element is satisfactorily formed, if a defect occurs due to foreign matter or other factors in forming the organic electroluminescent layer using a thin film of about 1000 GPa, the organic electroluminescent element is determined to be a poor grade.

This results in a loss of overall costs and material costs that were required to manufacture the array device of good quality, there is a problem that the production yield is lowered.

In addition, the bottom emission method has a high degree of freedom and stability due to the encapsulation process, and has a problem in that it is difficult to be applied to a high resolution product due to the limitation of the aperture ratio, and the top emission method is easy to design a thin film transistor and improves the aperture ratio. In terms of product life, the conventional upper light emitting structure has a problem in that the light transmittance is limited because the material selection range is narrower as the cathode is usually positioned on the organic light emitting layer.

In addition, in the upper light emitting method, barrier ribs made of organic materials are used to separate the organic light emitting layers from each other, and the life of the organic light emitting layer is shortened by outgassing emitted from the organic material.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which are simplified by forming an upper substrate of an organic light emitting display device in a two mask process.

Another object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which are capable of extending the life of the organic light emitting layer by patterning a partition wall separating the organic light emitting layer with an inorganic material.

In addition, another object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which can reduce the partition wall separating the organic light emitting layer, thereby improving the uniformity of the partition wall.

In addition, another object of the present invention is to provide an organic light emitting display device and a method of manufacturing the organic light emitting display device capable of forming a barrier rib separating the organic light emitting layer to be low, thereby maintaining a constant internal vacuum degree of the organic light emitting display device. have.

In order to achieve the above object, the organic light emitting display device according to the present invention,

First and second substrates spaced apart from each other by a predetermined distance;

An array element having at least one thin film transistor formed on the first substrate in units of subpixels;

A first electrode formed on the second substrate;

A barrier layer formed of a first buffer and a second buffer formed in an outer region dividing each subpixel on the first electrode;

An organic light emitting layer formed in each subpixel region partitioned by the partition layer;

A second electrode formed on a second substrate on which the organic light emitting layer is formed;

A conductive spacer electrically connecting the thin film transistor on the first substrate and the second electrode on the second substrate corresponding to each subpixel,

Second buffers are positioned on both sides of the first buffer, respectively, and have an undercut structure between the first buffer and each of the second buffers.

According to another embodiment of the present invention, a method of manufacturing an organic light emitting display device is provided.

Forming a first electrode on the substrate;

Forming a metal film on the first electrode, and then forming an auxiliary electrode and a metal pattern in an outer region of a subpixel partitioning each subpixel according to a first mask process;

Forming an insulating film on the substrate on which the auxiliary electrode and the metal pattern are formed, and then forming a barrier layer including a first buffer and a second buffer according to a second mask process;

Forming an undercut structure between the first buffer and the second buffer by etching the metal pattern on the substrate on which the barrier layer is formed using an etching solution;

Forming an organic light emitting layer in a region partitioned by the barrier layer in each subpixel;

Forming a second electrode on the substrate on which the organic light emitting layer is formed.

According to the present invention, the upper substrate of the top emission type organic light emitting display device is formed in a two mask process, thereby simplifying the process.

In addition, the present invention can extend the life of the organic electroluminescent layer by patterning the partition wall separating the organic electroluminescent layer with an inorganic material.

In addition, according to the present invention, the partition wall separating the organic electroluminescent layer can be formed low, and the uniformity of the partition wall can be improved.

In addition, according to the present invention, the partition wall separating the organic light emitting layer can be formed low, and the internal vacuum degree of the organic light emitting display device can be kept constant.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view of a pixel of an organic light emitting display device according to an exemplary embodiment of the present invention.

As shown in FIG. 2, in the organic light emitting display device according to an exemplary embodiment of the present invention, subpixels of red (R), green (G), and blue (B) are formed in a matrix form. The subpixels are separated by a second electrode separator including a first buffer 150 and a second buffer 151. An auxiliary electrode 140 is disposed in a lattice form around each of the subpixels, and the auxiliary electrode 140 is in electrical contact with a first electrode 132 that applies a voltage to each subpixel in common. .

The auxiliary electrode 140 is formed inside the first buffer 150 layer. Here, three red, green, and blue subpixels are defined as one pixel.

The partition layer formed of the first buffer 150 and the second buffer 151 has an undercut structure, between the first buffer 150 and the second buffer 151, and the first buffer 150. A sacrificial pattern 139 is formed on the second electrode 138.

In the organic light emitting display device, the first and second substrates 110 and 130 facing each other are disposed at regular intervals, and the array element 120 is formed on the transparent substrate 100 of the first substrate 110. The organic light emitting diode E is formed on the inner surface of the transparent substrate 101 of the second substrate 130.

In the structure of the organic light emitting diode E formed on the transparent substrate 101 of the second substrate 130, a first electrode 132 used as a common electrode is formed on the transparent substrate 101. The first electrode 132 includes a barrier layer including a first buffer 150 and a second buffer 151 formed in an outer region that divides each subpixel.

The first buffer 150 and the second buffer 151 are formed of an SiNx-based inorganic material, and formed together when the auxiliary electrode 140 is formed between the first buffer 150 and the second buffer 151. As the pattern is removed by etching, the space 160 is formed to have an under cut structure.

Accordingly, the second electrode 138 may be separated for each subpixel without using an inverse tapered partition wall, and the organic electroluminescent layer 136 made of a polymer material may be uniformly formed.

The organic light emitting layer 136 and the second electrode 138 are sequentially formed in the subpixel. That is, the organic light emitting layer 136 and the second electrode 138 are formed in a pattern separated by the first buffer 150 and the second buffer 151 in the subpixel units.

The organic electroluminescent layer 136 has a structure in which a first carrier transport layer, a light emitting layer, and a second carrier transport layer are sequentially stacked, and the first and second carrier transport layers are electrons or electrons in the light emitting layer 136b. It serves to inject and transport holes.

The first and second carrier transport layers are determined according to the arrangement of the anode and the cathode. For example, the organic light emitting layer 136 is selected from a polymer material, and the first electrode 132 is formed of an anode and a second electrode. In the case of configuring the cathode 138 as a cathode, the first carrier transport layer that is in contact with the first electrode 132 has a structure in which a hole injection layer and a hole transport layer are sequentially stacked, and the second electrode is in contact with the second electrode 138. The carrier transport layer has a structure in which an electron injection layer and an electron transport layer are sequentially stacked.

In addition, the organic light emitting layer 136 may be formed of a high molecular material or a low molecular material, and the forming method may be a vacuum deposition method, an inkjet method, a printing method, a nozzle spraying method, a roll coating method, or the like.

In the case of the low molecular weight material, a vacuum deposition method is generally used, but when solution casting is possible, the organic light emitting layer 136 may be formed using the above-described forming methods.

In the present invention, the organic electroluminescent layer 136 is formed by the inkjet method, but the vacuum deposition method, the printing method, the nozzle spray method, and the roll coating method may also be applied to the dual panel organic electroluminescent device of the present invention. have.

The array element 120 of the first substrate 110 is a device including a thin film transistor T. In order to supply a current to the organic light emitting diode E, the second electrode 138 is provided in subpixel units. The columnar conductive spacer 114 is positioned at the position connecting the thin film transistor T to the thin film transistor T.

The conductive spacer 114 has a characteristic of having a predetermined height in a columnar shape in a section between two substrates, unlike a liquid crystal display spacer, in addition to the cell gap retention function. .

That is, the conductive spacer 114 may include the drain electrode 112 of the thin film transistor T provided in the sub-pixel unit on the first substrate 110 and the second electrode 138 provided in the second substrate 130. It serves to electrically connect, which is composed of a metal coated on a columnar spacer formed of an organic insulating film or the like. The conductive spacers 114 as described above bond the pixels of the first and second substrates 110 and 130 one-to-one to allow current to flow through the conductive spacers 114.

When the connection between the conductive spacer 114 and the thin film transistor T is described in more detail, a protective layer having a drain contact hole 122 partially exposing the drain electrode 112 in a region covering the thin film transistor T. 124 is formed, and the conductive spacer 114 is positioned on the passivation layer 124 by being connected to the drain electrode 112 through the drain contact hole 122.

Here, the thin film transistor T corresponds to a driving thin film transistor connected to the organic light emitting diode E.

The metal forming the outside of the conductive spacer 114 is selected from a conductive material, and preferably selected from a metal material having ductility and low specific resistance.

Accordingly, in the organic light emitting display device of the present invention, the array element 120 including the thin film transistor T is formed on the transparent substrate 100 of the first substrate 110 and then formed according to FIGS. 4A to 4E. The second substrate 130 is bonded and completed.

In this case, the spacer 114 may be formed on the first substrate 110 or may be formed on the second electrode 138 of the second substrate 130.

The organic light emitting layer 136 of the present invention is characterized in that the upper light emitting method for emitting the emitted light toward the second substrate 130.

Accordingly, the first electrode 132 may be selected from a transparent material having transparency, and the second electrode 138 may be selected from an opaque metal material.

Although not shown in the drawings, the array element 120 includes a scan line, a signal line and a power supply line that intersect the scan line, and are spaced apart from each other by a predetermined distance, a switching thin film transistor positioned at a point where the scan line and the signal line cross, and a storage capacitor. It includes more.

The dual panel type organic light emitting display device in which the second substrate 130 on which the organic light emitting diode E is formed and the first substrate 110 on which the array element 120 is formed are bonded are arranged. Since the organic light emitting diode E is formed on different substrates, the yield of the array element 120 is higher in the yield of the array element 120 than in the case of forming the conventional array element and the organic light emitting diode on the same substrate. As (E) is not affected, it can show good characteristics in terms of production control of each device.

In addition, if the screen is implemented using the top emission method under the above-described conditions, the thin film transistor can be designed without the aperture ratio in mind, thereby increasing the array process efficiency, providing a high aperture ratio / high resolution product, and providing a dual panel. Since the organic light emitting diode device is formed as a dual panel type, it is possible to effectively block outside air than the conventional top emitting method, thereby increasing the stability of the product.

In addition, since the thin film transistor design generated in the conventional lower light emitting device product is configured on a substrate separate from the organic light emitting diode device, the degree of freedom in the arrangement of the thin film transistor can be obtained sufficiently, and thus the organic light emitting diode E Since the first electrode 132 is formed on the transparent substrate 101, the degree of freedom of the first electrode 132 can be increased as compared with the structure of forming the first electrode on the existing array element. Will have

In the dual panel type organic light emitting display device, when the organic light emitting layer 136 is formed of a polymer material, it is formed by an inkjet method as described above.

In the present invention, since the partition layer formed of the first buffer 150 and the second buffer 151 formed on the second substrate 130 has an undercut structure, the organic light emitting layer 136 is formed in subpixel units. Can be.

In addition, since the first buffer 150 and the second buffer 151 are spaced apart at predetermined intervals, the second electrode 138 may be formed in sub-pixel units without an additional mask process when forming the second electrode 138. Can be.

In addition, since the first buffer 150 and the second buffer 151 are formed by depositing and then patterning an inorganic material, there is an advantage that the height of the barrier layer may be formed to a low thickness of 2 μm or less.

In addition, since the first buffer 150 and the second buffer 151 are both formed of an inorganic material, the first buffer 150 and the second buffer 151 may have an advantage of increasing the lifespan without affecting the organic light emitting layer 136.

3 is an enlarged cross-sectional view of region A of the upper plate of FIG. 2.

As shown in FIG. 3, the second substrate 130, which is the upper substrate of the organic light emitting display device of the present invention, has the first electrode 132 of the organic light emitting diode E on the transparent substrate 101. And a partition layer formed of a first buffer 150 and a second buffer 151 in a predetermined region of the upper portion of the first electrode 132, that is, an outer region of the subpixel partitioning each subpixel. It is.

Accordingly, the first buffer 150 and the second buffer 151 are formed in a well type surrounding a region in which the organic light emitting layer 136 is formed, and have a round tapered shape.

In particular, a space 160 is formed between the first buffer 150 and the second buffer 151 by an undercut structure, and adjacent subpixels are separated by the removed undercut structure.

That is, the second electrode 138 formed on the organic light emitting layer 136 of each subpixel is formed by being separated by each subpixel without being connected between the subpixels by the space 160 formed by the undercut structure. Even if the existing inverted tapered partition is not provided, the partition can serve as the partition.

As a result, the process of forming the partition wall may be eliminated to obtain a process simplification effect. Also, by removing the partition wall, the area where the partition wall is to be formed is not necessary, and as a result, the width of the subpixel is increased, so that the aperture ratio may be improved. do.

In addition, the sacrificial pattern 139 separated in the process of forming the second electrode 138 is formed on the first electrode 132 of the space 160 formed by the undercut process, and the auxiliary electrode formed to form the undercut structure ( 140 is formed inside the first buffer 150.

4A through 4E are cross-sectional views illustrating a top plate manufacturing process of an organic light emitting display device according to an exemplary embodiment of the present invention.

As shown in FIGS. 4A and 4B, a transparent metal film (ITO; Indium Tin Oxide) is deposited on the entire area of the transparent substrate 101 to form a first electrode 132, and then the first electrode 132. After the metal film is formed on the entire surface, the auxiliary electrode 140 and the metal pattern 141 adjacent to the auxiliary electrode 140 are formed according to the first mask process.

The metal patterns 141 formed on both sides of the auxiliary electrode 140 are patterns formed to form an undercut structure when the barrier layer is formed.

When the auxiliary electrode 140 is formed as described above, as shown in FIG. 4C, an insulating film is formed on the entire region of the transparent substrate 101, and then the second mask process is performed to form the first buffer 150 and the first buffer 150. 2 buffer 151 is formed.

The insulating film is formed of silicon oxide (SiO 2) or silicon nitride film (SiN _X ), the thickness of which is 2 μm or less, and the buffer is formed in a well type that surrounds the subpixel region.

The first buffer 150 is formed in a pattern surrounding the entire surface of the auxiliary electrode 140, and the second buffer 151 is formed in a pattern exposing a part of the metal pattern 141. In particular, since the second buffer 151 is formed as a pattern surrounding a portion of the metal pattern 141 to be exposed, an undercut structure is formed while the metal pattern 141 is removed.

When the partition layer including the first buffer 150 and the second buffer 152 is formed as described above, as shown in FIG. 4D, the second substrate 151 is immersed by immersing the transparent substrate 101 in an etching solution. The metal pattern 141 is removed.

In this case, the auxiliary electrode 140 is not etched because it is surrounded by the first buffer 150.

In addition, the metal pattern 141 formed in the second buffer 151 is adjusted to the etching time so that all can be etched. Therefore, when the metal pattern 141 is etched, an undercut structure is formed between the second buffer 151 and the first buffer 150. That is, the space 160 in which the first electrode 132 is exposed is formed between the first buffer 150 and the second buffer 151.

The undercut structure has a structure in which a cross section of the second buffer 151 facing the first buffer 150 enters in a gap shape of about 0.1 to 3 μm in the space 160. .

As described above, when the partition layer composed of the first buffer 150 and the second buffer 151 is formed, as shown in FIG. 4E, the partition wall composed of the first buffer 150 and the second buffer 151 is formed. An organic light emitting layer 136 is formed in the sub pixel space between the layers.

The organic electroluminescent layer 136 has any one color of red, green, and blue, and is formed of a high molecular material or a low molecular material.

Here, when the organic light emitting layer 136 is formed of a polymer material, when the first electrode 132 is assumed to be an anode and the second electrode 138 of FIG. 4E is a cathode, hole transport is performed. A layer, a light emitting layer, and an electron transport layer are sequentially stacked, and the hole / electron transport layer injects and transports holes or electrons into the light emitting layer.

In this case, the hole transport layer in contact with the first electrode 132 has a structure in which a hole injection layer and a hole transport layer are sequentially stacked, and in the future, the electron transport layer in contact with the second electrode is an electron injection layer and an electron transport layer. It may be made of a stacked structure.

Then, the second electrode 138 is formed by forming a metal layer such as potassium, magnesium, or aluminum on the entire surface of the transparent substrate 101. In this case, since the space 160 having an undercut structure is formed between the first buffer 150 and the second buffer 151, the metal film formed to form the second electrode 138 is a sacrificial pattern 139. It is formed on the first electrode 132 exposed to the space 160 in the form.

As described in detail above, the present invention has the effect of simplifying the process by forming the upper substrate of the organic light emitting display device in a two-mask process.

In addition, the present invention has the effect of extending the life of the organic electroluminescent layer by patterning the partition wall separating the organic electroluminescent layer with an inorganic material.

In addition, the present invention can form a partition for separating the organic electroluminescent layer low, and there is an effect of improving the uniformity of the partition.

In addition, according to the present invention, the partition wall separating the organic light emitting layer can be formed low, and the internal vacuum degree of the organic light emitting display device is kept constant.

The present invention is not limited to the above-described embodiments, and various changes can be made by those skilled in the art without departing from the gist of the present invention as claimed in the following claims.

Claims (18)

First and second substrates spaced apart from each other by a predetermined distance; An array element having at least one thin film transistor formed on the first substrate in units of subpixels; A first electrode formed on the second substrate; A barrier layer formed of a first buffer formed in an outer region dividing each subpixel above the first electrode, a second buffer, and an auxiliary electrode formed under the first buffer; An organic light emitting layer formed in each subpixel region partitioned by the partition layer; A second electrode formed on a second substrate on which the organic light emitting layer is formed; A conductive spacer electrically connecting the thin film transistor on the first substrate and the second electrode on the second substrate corresponding to each subpixel, And a second buffer on both sides of the first buffer, and having an under cut structure between the first buffer and each of the second buffers. The organic light emitting display device as claimed in claim 1, wherein the undercut structure region is formed into a gap of 0.1 to 3 μm into the second buffer facing the first buffer. The organic light emitting display device of claim 1, wherein the first buffer and the second buffer are formed of the same material. delete The organic light emitting display device of claim 1, wherein the auxiliary electrode is formed to be surrounded by the first buffer so as not to be exposed to the outside. The organic light emitting display device of claim 1, wherein the barrier layer including the first buffer and the second buffer is formed in a well type surrounding a region where the organic light emitting layer is formed. The organic light emitting display device of claim 1, wherein the organic light emitting layer is formed of a high molecular material or a low molecular material. The organic light emitting display device of claim 1, wherein the first buffer and the second buffer are formed of silicon oxide (SiO 2) or silicon nitride film (SiN _X ). The organic light emitting display device according to claim 1, wherein a height of the barrier layer formed by the first buffer and the second buffer is 2 m or less. Forming a first electrode on the substrate; Forming a metal film on the first electrode, and then forming an auxiliary electrode and a metal pattern in an outer region of a subpixel partitioning each subpixel according to a first mask process; Forming an insulating film on the substrate on which the auxiliary electrode and the metal pattern are formed, and then forming a barrier layer including a first buffer formed at the center and a second buffer formed at both sides of the first buffer according to a second mask process. Forming; Forming an undercut structure between the first buffer and the second buffer by etching the metal pattern on the substrate on which the barrier layer is formed using an etching solution; Forming an organic light emitting layer in a region partitioned by the barrier layer in each subpixel; And forming a second electrode on the substrate on which the organic light emitting layer is formed. The method of claim 10, further comprising forming a conductive spacer on the second electrode corresponding to each subpixel. delete The method of claim 10, wherein the barrier layer is formed in a well type surrounding a region where the organic light emitting layer is formed. The method of claim 10, wherein the organic light emitting layer is formed of a high molecular material or a low molecular material. The method of claim 14, wherein the polymer material is formed by an inkjet method. The organic light emitting display device of claim 10, wherein the undercut structure region has a structure in which one side of the second buffer facing the first buffer has a gap of 0.1 to 3 μm inwardly. Manufacturing method. The method of claim 10, wherein the first buffer and the second buffer are formed of a silicon nitride film (SiNx) or a silicon oxide film (SiO ₂ ). The method of claim 10, wherein a height of the barrier layer formed by the first buffer and the second buffer is 2 μm or less.

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