KR20050104100A - Organic electro luminescence device and fabrication method thereof - Google Patents

Abstract

The organic light emitting display device according to the present invention includes: first and second substrates having subpixels, which are areas in which an image is embodied, defined and spaced apart from each other by a predetermined distance; An array element having at least one thin film transistor formed on the first substrate in subpixel units; A conductive spacer electrically connected to the driving thin film transistor of the array element for each subpixel; A first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate; A buffer formed in an outer region of a subpixel that divides each subpixel on the first electrode and an region that divides the inside of the subpixel into a plurality of regions; Barrier ribs formed on an upper portion of a buffer formed at an outer region of the subpixel; An organic light emitting layer formed in a region within the subpixels divided by the buffer; And a second electrode of the organic light emitting diode formed on the second substrate on which the organic light emitting layer is formed.

Description

Organic electroluminescent device and method of manufacturing the same {Organic Electro luminescence Device and fabrication method

The present invention relates to an organic electroluminescent device, and to a dual panel type organic electroluminescent device and a method of manufacturing the same.

In the field of flat panel displays (FPDs), a liquid crystal display device (LCD) has been the most noticeable display device until now, but the liquid crystal display device is a light receiving device, not a light emitting device. Due to technical limitations such as brightness, contrast, viewing angle, and large area, development of a new flat panel display device capable of overcoming these shortcomings is being actively developed. One of the new flat panel displays, the organic light emitting display device Because of its self-luminous type, the viewing angle, contrast, etc. are superior to the liquid crystal display device, and since the backlight is not required, it is possible to be light and thin and advantageous in terms of power consumption.

In addition, since it is possible to drive a DC low voltage, the response speed is fast, and all solid, it is strong against external shock and has a wide range of use temperature. In particular, unlike the liquid crystal display device or the plasma display panel (PDP), all of the deposition and encapsulation equipments are manufactured in the organic electroluminescent device manufacturing process. Therefore, the process is very simple.

In addition, when the organic light emitting diode is driven in an active matrix method having a thin film transistor as a switching element for each pixel, the same luminance is displayed even when a low current is applied, and thus, low power consumption, high definition, and large size can be obtained.

1 is a schematic cross-sectional view of a conventional organic electroluminescent device, which shows a cross-sectional structure of an AMOLED operating in a bottom emission method.

As illustrated, the first and second substrates 10 and 30 are disposed to face each other, and the edge portions of the first and second substrates 10 and 30 are sealed by a seal pattern 40. The thin film transistor T is formed on the transparent substrate 1 of the first substrate 10 for each subpixel, and is connected to the thin film transistor T to form the first electrode 12. Red, green, and blue colors are disposed on the transistor T and the first electrode 12 to be connected to the thin film transistor T so as to correspond to the first electrode 12. An organic light emitting layer 14 including a light emitting material is formed, and a second electrode 16 is formed on the organic light emitting layer 14.

The first and second electrodes 12 and 16 serve to apply an electric field to the organic light emitting layer 14.

The second electrode 16 and the second substrate 30 are spaced apart from each other by the seal pattern 40 described above, and although not shown in the drawing, the inner surface of the second substrate 30 may be formed from the outside. A moisture absorbent (not shown) that absorbs the incoming moisture and a semipermeable tape (not shown) for adhesion between the moisture absorbent and the second substrate 30 are included.

For example, when the first electrode 12 is an anode and the second electrode 16 is a cathode in a bottom emission structure, the first electrode 12 is selected from a transparent conductive material. The second electrode 16 is selected from a metal material having a low work function, and under such conditions, the organic electroluminescent layer 14 is formed from a layer in contact with the first electrode 12 by a hole injection layer 14a, A hole transport layer 14b, an emission layer 14c, and an electron transport layer 14d are stacked in this order.

In this case, the light emitting layer 14c has a structure in which light emitting materials for implementing red, green, and blue colors are sequentially disposed for each subpixel.

As described above, the conventional organic light emitting display device has a structure in which an array device and an organic light emitting diode are stacked on the same substrate.

However, the conventional organic light emitting diode of the conventional lower emission method described above manufactures a device by bonding the substrate on which the array device and the organic light emitting diode are formed and a separate encapsulation substrate, in which case the yield of the array device. Since the product of the yield of the organic light emitting diode and the yield of the organic light emitting diode determine the yield of the organic light emitting diode, the overall process yield is greatly limited by the organic light emitting diode process corresponding to the latter process. For example, even if the array element is well formed, 1000? If defects are caused by foreign matter or other factors in the formation of the organic light emitting layer using the thin film of the degree, the organic light emitting element is determined as a bad grade.

This results in a loss of overall costs and material costs that were required to manufacture the array device of good quality, there is a problem that the production yield is lowered.

In addition, the bottom emission method has a high degree of freedom and stability due to the encapsulation process, and has a problem in that it is difficult to be applied to a high resolution product due to the limitation of the aperture ratio, and the top emission method is easy to design a thin film transistor and improves the aperture ratio. In terms of product life, the conventional top emission type structure has a problem in that the light transmittance is reduced because the material selection range is narrower as the cathode is generally positioned on the organic light emitting layer, so that the light efficiency is lowered.

In the dual panel type organic electroluminescent device, an organic electroluminescent light emitting device is formed so that the organic light emitting layer made of a polymer material can be uniformly formed by forming a plurality of light emitting regions in each subpixel provided on the upper substrate. An object thereof is to provide a device and a method of manufacturing the same.

In order to achieve the above object, the organic light emitting device according to the present invention includes: first and second substrates having subpixels, which are areas in which an image is embodied, and which are spaced apart from each other by a predetermined distance; An array element having at least one thin film transistor formed on the first substrate in subpixel units; A conductive spacer electrically connected to the driving thin film transistor of the array element for each subpixel; A first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate; A buffer formed in an outer region of a subpixel that divides each subpixel on the first electrode and an region that divides the inside of the subpixel into a plurality of regions; Barrier ribs formed on an upper portion of a buffer formed at an outer region of the subpixel; An organic light emitting layer formed in a region within the subpixels divided by the buffer; And a second electrode of the organic light emitting diode formed on the second substrate on which the organic light emitting layer is formed. Here, the light emitting regions of each subpixel are formed in plural by the organic electroluminescent layer provided in a plurality of regions divided by the buffer, and are formed on the second electrode in contact with the conductive spacers provided on the first substrate. The conductive spacer contact region is formed in a portion overlapping the buffer formation region in each subpixel, and the organic electroluminescent layer is formed of a polymer material.

In addition, in the method of manufacturing an organic light emitting display device according to the present invention, an array element having one or more thin film transistors formed in subpixel units on an inner surface of a first substrate is formed, and a drain electrode of a driving thin film transistor provided in the array element; Forming electrically conductive conductive spacers; Forming a first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate; Forming a buffer in an outer region of a subpixel partitioning each subpixel on the first electrode and a region to divide the subpixel inside into a plurality of regions; Forming a partition on an upper portion of a buffer formed at an outer region of the subpixel; Forming an organic light emitting layer in a region of the subpixel divided by the buffer; Forming a second electrode of the organic light emitting diode on the second substrate on which the organic light emitting layer is formed; The first and second substrates are electrically connected by the contact of the conductive spacer and the second electrode, and the first and second substrates are bonded to each other.

A dual panel type organic electroluminescent device may be cited as a structure proposed to overcome the problems of the conventional lower light emitting method and the organic light emitting device of the upper light emitting method, which will be described below. The electroluminescent device will be described.

FIG. 2 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type, and is illustrated based on one pixel area for convenience of description.

As illustrated, the first and second substrates 110 and 130 are disposed to be spaced apart from each other, and the array element 120 is formed on the inner surface of the transparent substrate 100 of the first substrate 110. An organic light emitting diode device E is formed on an inner surface of the transparent substrate 101 of the second substrate 130, and edge portions of the first and second substrates 110 and 130 are sealed patterns 140. It is sealed by.

The organic light emitting diode E includes a first electrode 132 used as a common electrode, a partition wall 134 disposed at a boundary between subpixels under the first electrode 132, and a partition wall ( In the region 134, the organic light emitting layer 136 and the second electrode 138 are sequentially formed in a separated pattern in subpixel units.

In addition, the organic light emitting layer 136 formed in each subpixel is partitioned, and the buffer 133 is provided to overcome the short circuit between the first electrode 132 and the second electrode 138 by the conductive spacer 114. Is formed.

The organic light emitting layer 136 has a structure in which a first carrier transfer layer 136a, a light emitting layer 136b, and a second carrier transfer layer 136c are stacked in this order, and the first and second carrier transfer layers 136a are stacked. , 136c serves to inject and transport electrons or holes into the light emitting layer 136b.

The first and second carrier transfer layers 136a and 136c are defined according to the arrangement of the anode and the cathode. For example, the light emitting layer 136b is selected from a polymer material, and the first electrode 132 is formed of an anode and a cathode. When the second electrode 138 is configured as a cathode, the first carrier transfer layer 136a which is in contact with the first electrode 132 has a structure in which a hole injection layer and a hole transport layer are sequentially stacked, and the second electrode 138 ), The second carrier transport layer 136c is formed in a structure in which an electron injection layer and an electron transport layer are sequentially stacked.

In addition, the organic light emitting layer 136 may be formed of a high molecular material or a low molecular material. When the low molecular material is formed by a vacuum deposition method, a high molecular material is formed by an inkjet method.

In addition, the array element 120 is a device including a thin film transistor T. In order to supply a current to the organic light emitting diode E, the second electrode 138 and the thin film transistor T in subpixel units. ), A columnar conductive spacer 114 is positioned at a position to connect the same.

Unlike the spacer for a liquid crystal display device, the conductive spacer 114 is intended to electrically connect two substrates rather than a cell gap retention function, and has a predetermined height in a column shape in a section between the two substrates.

That is, the conductive spacer 114 may include the drain electrode 112 of the thin film transistor T provided in the sub-pixel unit on the first substrate 110 and the second electrode 138 provided in the second substrate 130. It serves to electrically connect the metal to the columnar spacers formed of the organic insulating film, etc., which serves to connect the pixels of the first and second substrates 110 and 130 one-to-one to pass current. .

When the connection between the conductive spacer 114 and the thin film transistor T is described in more detail, a protective layer having a drain contact hole 122 partially exposing the drain electrode 112 in a region covering the thin film transistor T. 124 is formed, and the conductive spacer 114 is positioned on the passivation layer 124 by being connected to the drain electrode 112 through the drain contact hole 122.

Here, the thin film transistor T corresponds to a driving thin film transistor connected to the organic light emitting diode E.

The metal forming the outside of the conductive spacer 114 is selected from a conductive material, and preferably selected from a metal material having ductility and low specific resistance.

In addition, the light emission from the organic light emitting layer 136 is characterized in that the upper light emitting method for emitting toward the second substrate 130.

Accordingly, the first electrode 132 may be selected from a transparent material having transparency, and the second electrode 138 may be selected from an opaque metal material.

In addition, the space I between the first and second substrates 110 and 130 may be filled with an inert gas or an insulating liquid.

Although not shown in the drawings, the array element 120 includes a scan line, a signal line and a power supply line that intersect the scan line, and are spaced apart from each other by a predetermined distance, a switching thin film transistor positioned at a point where the scan line and the signal line cross, and a storage capacitor. It includes more.

Such a dual panel type organic electroluminescent device has an array element and an organic electroluminescent diode element formed on different substrates, and thus can be compared with the case of forming an existing array element and an organic electroluminescent diode element on the same substrate. At this time, the organic electroluminescent diode device is not affected by the yield of the array device, and thus it may exhibit good characteristics in terms of production management of each device.

In addition, if the screen is implemented in the upper light emission method under the above-described conditions, it is possible to design a thin film transistor without minding the aperture ratio, thereby increasing the array process efficiency, providing a high aperture ratio / high resolution product, and providing a dual panel ( Since the organic light emitting diode device is formed as a dual panel type, it is possible to effectively block outside air than the conventional top emitting method, thereby increasing the stability of the product.

In addition, since the thin film transistor design generated in the conventional lower light emitting device product is configured on a substrate separate from the organic light emitting diode device, the degree of freedom in the arrangement of the thin film transistor can be obtained sufficiently, and the first of the organic light emitting diode device can be obtained. Since the electrode is formed on the transparent substrate, compared with the structure of forming the first electrode on the existing array element, there is an advantage that can increase the degree of freedom for the first electrode.

However, in the dual panel type organic electroluminescent device, when the organic electroluminescent layer 136 is formed of a polymer material, a position in contact with the second substrate 130 of the conductive spacer 114 is an organic electroluminescent layer ( If the 136 is formed, that is, in the light emitting area, a problem occurs that obstructs the flow of the polymer ink.

Therefore, when the polymer organic electroluminescent layer 136 is provided, the conductive spacer 114 should be located in one corner area of each pixel on the second substrate 130, in order to do so, the first substrate 110. There is a problem in that the design of the array device, such as the position and shape of the thin film transistor provided in the is significantly limited by this.

As shown in FIG. 2, according to the conventional array device 120 design, the conductive spacer 114 connected to the drain electrode 112 of the driving thin film transistor T may include the first substrate 110 and the first substrate 110. When the second substrate 130 is correctly aligned and bonded to each other, the second substrate 130 is generally in contact with the center position of the light emitting region (that is, the region in which the organic light emitting layer 136 is formed) on the second substrate 130.

FIG. 3 is a schematic plan view of a second substrate of the dual panel type organic electroluminescent device shown in FIG. 2, and is illustrated around one pixel area (ie, three subpixels) for convenience of description.

As shown in FIG. 3, each of the subpixels 300 is partitioned and separated from each other by the buffer 133 and the partition 134, and the organic light emitting layer may be formed in an area within the buffer 133 of each subpixel. 136 is formed.

Here, the portion of the first substrate (110 in FIG. 2) in contact with the conductive spacer (114 in FIG. 2) provided in each subpixel, as described above, the light emitting area (organic) on the second substrate (130 in FIG. 2) The area in which the electroluminescent layer is formed).

That is, the conductive spacer contact region 310 is formed in the center region of each subpixel 300 of the second substrate as shown in FIG. 3, wherein the organic light emitting layer 136 is formed of a polymer material. In this case, as described above, the conductive spacer contact region 310 may prevent the uniform ink from interfering with the flow of the polymer ink.

In other words, when jetting a polymer organic light emitting material ink onto each of the subpixels 300, the ink may be subpixels due to a difference in height and surface energy caused by the conductive spacer contact region 310. Spreading uniformly on the substrate is hindered.

As a result, in the case of the structure of the dual panel type organic light emitting device illustrated in FIGS. 2 and 3, there is a disadvantage in that the organic light emitting layer 136 is formed of a polymer material.

In addition, when the organic light emitting layer is formed by the inkjet method, when the light emitting region 136, that is, the organic light emitting layer forming region 136 defined in the buffer 133 of each subpixel 300 becomes large, ink is formed. Problems may arise that do not spread sufficiently or fail to obtain a film of good flatness.

The present invention was created to overcome the above problems and will be described in more detail with reference to the accompanying drawings.

4 is a schematic cross-sectional view of an organic light emitting display device of the dual panel type according to the present invention, and is illustrated with one pixel area for convenience of description.

5A and 5B are schematic plan views of a second substrate of the organic light emitting display device of the dual panel type shown in FIG. 4.

However, the same reference numerals are used for the same components as in FIG. 2, and descriptions of the same components will be omitted.

In the dual panel type organic light emitting display device, the organic light emitting layer made of a polymer material can be uniformly formed by forming a plurality of light emitting regions in each subpixel of the upper substrate, that is, the second substrate. It is characterized by.

That is, according to the present invention, the light emitting area of each subpixel provided in the second substrate is divided into a plurality of areas through a buffer, and the contact area of the conductive spacer on the second electrode to be contacted for electrical connection with the first substrate. Is a region other than the light emitting region, that is, the region where the buffer is formed.

As shown in FIG. 4, in the organic light emitting display device according to the present invention, the first electrode 132 of the organic light emitting diode E is formed on the front surface of the transparent substrate 101 of the second substrate 430. The buffers 433 and 433 ′ are formed in a predetermined region of the first electrode 132, that is, an outer region of a subpixel that divides each subpixel and an region that divides the inside of the subpixel into a plurality of regions. do.

Here, the buffers 433 and 433 'serve to partition an area of each subpixel and define an area in which the organic light emitting layer 136 is formed.

That is, the buffer 433 is formed on the outer portion of the first electrode 132, thereby partitioning the area of each sub-pixel, and the organic light emitting layer 136 is the buffer 433, 433 in each sub-pixel It is formed only in the area divided into a plurality by ').

Accordingly, the light emitting area of each subpixel is not formed as one but a plurality of areas divided by the buffer 433 '.

When the organic electroluminescent layer 136 is formed of a polymer material, the organic electroluminescent layer forming region 136 defined in the buffer 433 of each subpixel, that is, when the inkjet method is used, is divided into small portions. Therefore, it is possible to overcome the problem that ink, which is a conventional problem, does not spread sufficiently, and that a film having a good flatness cannot be obtained.

In addition, a partition wall 434 is formed in an upper region of the buffer formed in the outer region of the subpixel, and the partition wall 434 separates the second electrode 138 formed in each subpixel for each subpixel. Perform.

An organic EL layer 136 is formed in a plurality of divided regions in the buffer 433 ′ for each subpixel by an inkjet method, and a second electrode on the second substrate including the organic EL layer 136 is formed. 138) is formed.

In this case, the organic light emitting layer 136 is formed of a polymer material, and the second electrode 138 is divided by each subpixel by the partition 434, and thus serves as a pixel electrode.

In addition, the array element 120 formed on the first substrate 410 is a device including a driving thin film transistor T, and supplies a current to the organic light emitting diode E formed on the second substrate 430. In order to do this, a conductive spacer 114 in electrical contact with the second electrode 138 formed on the second substrate 430 is formed.

Here, the conductive spacer 114 is electrically connected to the drain electrode 112 of the driving thin film transistor T provided in each subpixel, as a result, is formed on the second substrate 430 as a result. The organic light emitting diode E and the drain electrode 112 of the thin film transistor T serve to electrically connect each other.

In the present invention, the region of each subpixel of the second substrate 430 to which the conductive spacer 114 is in contact is not the region in which the organic light emitting layer 136 is formed (that is, the light emitting region divided into a plurality). And a buffer 433 'formed inside the subpixel to separate the region.

That is, since the conductive spacer contact area A on the second electrode to be contacted for electrical connection with the first substrate is not formed on the divided light emitting area, a polymer organic light emitting material ink is applied to each subpixel. When jetting, it is possible to overcome the conventional problem that the ink is not uniformly spread on the subpixels due to the difference in height and surface energy caused by the conductive spacer contact area A. It is.

In addition, one subpixel divided into the plurality of light emitting regions has the same luminance, and each of the plurality of light emitting regions included in the subpixel has the same driving thin film transistor provided in the subpixel on the first substrate. It is characterized by being driven by T).

Referring to FIG. 5A, each of the subpixels 500 provided on the second substrate is partitioned from each other by a buffer 433, and each of the plurality of subpixels inside the subpixels is buffered by the buffers 433 and 433 ′. It is divided into areas.

That is, the organic light emitting layer 136 is formed in the regions of the buffers 433 and 433 'divided into the plurality of subpixels, respectively.

In addition, a partition wall 434 is formed in an upper region of the buffer 433 formed at an outer portion of the sub pixel, and as described above, the partition wall 434 separates the second electrode for each sub pixel and consequently the pixel. It serves as an electrode.

In addition, the conductive spacer contact region 510 on the second electrode is formed at a portion overlapping with the buffer 433 'forming region in each subpixel, as shown, which is described above. This is to overcome the problem that, when formed in the light emitting area, the ink is not uniformly spread on the subpixels due to the difference in height and surface energy caused by the conductive spacer contact area.

However, the conductive spacer contact region 510 is not limited to being formed in the center region of each subpixel, as shown in FIG. 5A, but may be formed on the buffer region at one end of each subpixel. This is shown in Figure 5b.

6A to 6F are cross-sectional views illustrating a process of manufacturing the organic light emitting display device according to the present invention. However, this is illustrated based on the cross-sectional view shown in FIG.

Referring first to FIG. 6A, an array element is formed on a first substrate.

For example, when the thin film transistor T constituting the array device 120 is a polysilicon thin film transistor, the step of forming a buffer layer on the transparent substrate 100, and the semiconductor layer on the buffer layer And forming a capacitor electrode, forming a gate electrode, a source, and a drain electrode on the semiconductor layer, and forming a power electrode on the capacitor electrode and connected to the source electrode.

In addition, when the array element 120 is formed, a conductive spacer 114 as an electrical connection pattern for electrical connection between the first and second substrates is formed.

The conductive spacer 114 electrically connects the drain electrode 112 of the driving thin film transistor T on the first substrate 410 to the second electrode provided on the second substrate. Metal is coated on a columnar spacer formed of an insulating film or the like, which serves to pass current by connecting the pixels of the first and second substrates one-to-one.

When the connection between the conductive spacer 114 and the driving thin film transistor T is described in more detail, the protection having the drain contact hole 122 partially exposing the drain electrode 112 in a region covering the thin film transistor T is described. A layer 124 is formed, and a conductive spacer 114 connected to the drain electrode 112 through the drain contact hole 122 is disposed on the passivation layer 124.

Next, as shown in FIG. 6B, the first electrode 132 of the organic light emitting diode is formed on the transparent substrate 101 of the second substrate.

In this case, the first electrode 132 is preferably an indium tin oxide (ITO) electrode as a transparent conductive material.

Next, as illustrated in FIG. 6C, buffers 433 and 433 are provided in a predetermined region of the first electrode, that is, an outer region of a subpixel that divides each subpixel, and an region that divides the inside of the subpixel into a plurality of regions. ') Is formed.

Here, the buffers 433 and 433 'serve to partition an area of each subpixel and define an area in which the organic light emitting layer 136 is formed.

That is, the buffer 433 is formed on the outer portion of the first electrode 132, thereby partitioning the area of each sub-pixel, and the organic light emitting layer 136 is the buffer 433, 433 in each sub-pixel It is formed only in the area divided into a plurality by ').

Accordingly, the light emitting area of each subpixel is formed not by one but by a plurality of areas divided by the buffers 433 and 433 '.

This means that when the organic light emitting layer 136 is formed of a polymer material, the organic light emitting layer forming region 136 defined in the buffers 433 and 433 'of each subpixel 300 is used. By dividing the light emitting area into small pieces, it is possible to overcome the problem that ink, which is a conventional problem, does not spread sufficiently, and that a film of good flatness cannot be obtained.

In addition, a partition wall 434 is formed in an upper region of the buffer 433 formed in an outer region of the subpixel, and the partition wall 434 separates the second electrode 138 formed in each subpixel for each subpixel. It plays a role.

Next, as shown in FIG. 6D, an organic light emitting layer 136 is formed in a plurality of divided regions in the buffers 433 and 433 'for each subpixel by an inkjet method.

The organic electroluminescent layer 136 is formed of a polymer material, and when the first electrode is an anode and the second electrode is a cathode, a hole transport layer 136a and a light emitting layer 136b and the electron transport layer 136c are sequentially stacked, and the hole / electron transport layers 136a and 136c inject holes or electrons into the light emitting layer 136b. ) And transporting.

In this case, the hole transport layer 136a in contact with the first electrode has a structure in which a hole injection layer and a hole transport layer are sequentially stacked, and the second electron transport layer 136c in contact with the second electrode is an electron injection layer. The electron transport layer may be formed in a stacked structure.

As such, when the organic light emitting layer 136 is formed in a plurality of divided regions by the buffers 433 and 433 ', as shown in FIG. 6E, the second electrode 138 of the organic light emitting diode is disposed thereon. Is formed.

Since the second electrode 138 is divided by each subpixel by the partition wall 434, the second electrode 138 serves as a pixel electrode, and the second electrode 138 is preferably selected from a metal having a low work function. For example, aluminum (Al) etc. can be mentioned.

Thereafter, when the first and second substrates 410 and 430 are bonded to each other and encapsulated using the seal pattern 140 or the like, the conductive spacer 114 of the first substrate 430 is formed. ) And the second electrode 138 of the second substrate 430 are in contact with each other, thereby the first and second substrates 410 and 430 are electrically connected to each other, which is on the second substrate 430. The second electrode 138 of the formed organic light emitting diode and the drain electrode 112 of the driving thin film transistor T formed on the first substrate 410 are electrically connected to each other.

According to the present invention, first, the production yield and production management efficiency can be improved, and second, because of the top emission method, it is easy to design a thin film transistor, high aperture ratio / high resolution can be implemented, and third, the organic field on the substrate Since the electrode for the light emitting diode is configured, the material selection range can be widened. Fourth, since the light emitting diode and the encapsulation structure are provided, there is an advantage that a stable product can be provided from the outside air.

In addition, by forming a plurality of light emitting regions in each sub-pixel provided on the upper substrate, it is possible to maximize the spreading characteristics of the polymer organic light emitting material and the flatness of the film (dual panel type) In the organic electroluminescent device, there is an advantage that the position of the conductive spacer can be freed.

1 is a schematic cross-sectional view of a conventional organic light emitting display device.

2 is a schematic cross-sectional view of an organic light emitting display device of a dual panel type.

FIG. 3 is a schematic plan view of a second substrate of the dual panel type organic light emitting display device illustrated in FIG. 2.

4 is a schematic cross-sectional view of an organic light emitting display device of the dual panel type according to the present invention;

5A and 5B are schematic plan views of a second substrate of the dual panel type organic light emitting display device shown in FIG. 4.

6A to 6F are cross-sectional views illustrating a process for manufacturing the organic light emitting display device according to the present invention.

<Explanation of symbols for main parts of the drawings>

410: first substrate 430: second substrate

433, 433: buffer 434: bulkhead

500: subpixel 510: conductive spacer contact area

Claims (9)

First and second substrates having subpixels, which are areas in which an image is embodied, and which are disposed to face each other at a predetermined interval; An array element having at least one thin film transistor formed on the first substrate in subpixel units; A conductive spacer electrically connected to the driving thin film transistor of the array element for each subpixel; A first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate; A buffer formed in an outer region of a subpixel that divides each subpixel on the first electrode and an region that divides the inside of the subpixel into a plurality of regions; Barrier ribs formed on an upper portion of a buffer formed at an outer region of the subpixel; An organic light emitting layer formed in a region within the subpixels divided by the buffer; An organic electroluminescent device comprising a second electrode of an organic light emitting diode formed on a second substrate on which the organic electroluminescent layer is formed. The method of claim 1, The light emitting area of each subpixel is provided in a plurality of areas by forming the organic light emitting layer in each area divided by the buffer. The method of claim 2, And a plurality of light emitting regions of the subpixels on the second substrate are driven by the same driving thin film transistors of the subpixels on the first substrate. The method of claim 1, The conductive spacer contact region on the second electrode in contact with the conductive spacer provided on the first substrate, is formed in a portion overlapping with the buffer formation region in each sub-pixel. The method of claim 1, The organic electroluminescent layer is formed of a high molecular material. Forming an array element having one or more thin film transistors formed in subpixel units on an inner surface of the first substrate, and forming a conductive spacer electrically connected to a drain electrode of a driving thin film transistor provided in the array element; Forming a first electrode for an organic light emitting diode device positioned on an inner surface of the second substrate; Forming a buffer in an outer region of a subpixel partitioning each subpixel on the first electrode and a region to divide the subpixel inside into a plurality of regions; Forming a partition on an upper portion of a buffer formed at an outer region of the subpixel; Forming an organic light emitting layer in a region of the subpixel divided by the buffer; Forming a second electrode of the organic light emitting diode on the second substrate on which the organic light emitting layer is formed; And the first and second substrates are electrically connected by the contact of the conductive spacer and the second electrode, and the first and second substrates are bonded to each other. The method of claim 6, And a plurality of light emitting regions of the subpixels formed by the organic light emitting layer in a plurality of regions divided by the buffer. The method of claim 6, The conductive spacer contact region on the second electrode in contact with the conductive spacer provided on the first substrate is formed in a portion overlapping with the buffer formation region in each subpixel. The method of claim 6, wherein the organic light emitting layer is formed of a polymer material.