KR100734770B1 - plasma processing apparatus - Google Patents

Abstract

The present invention relates to a structure of a plasma processing apparatus, and more particularly, to a structure of a plasma processing apparatus capable of preventing unnecessary plasma from occurring in both spaces of a chamber and cooling the lower electrode even in a non-contact manner to prevent occurrence of arcing. It is about.

A constituent means of the plasma processing apparatus of the present invention is a plasma processing apparatus for generating a plasma inside a chamber in a vacuum state to perform a predetermined process on a substrate, wherein the present invention has been proposed to solve the above technical problem. The constituent means of the processing apparatus includes a plasma processing apparatus for generating a plasma in a vacuum chamber to perform a predetermined process on a substrate, wherein an upper electrode is provided above the chamber, and the chamber faces the upper electrode. The base, the insulating member, the lower electrode provided with the cooling plate, and the electrostatic chuck are sequentially stacked on the lower side, and the base further includes an extension base extending vertically along the lower electrode side.

Plasma, processing equipment, base

Description

Plasma processing apparatus

1 is a cross-sectional view of a conventional plasma processing apparatus.

FIG. 2 is an enlarged view of portion “A” shown in FIG. 1.

3 is a cross-sectional view of a plasma processing apparatus according to the present invention.

4 is an enlarged view of a portion “B” shown in FIG. 3.

Explanation of symbols on the main parts of the drawings

10: chamber 11: both spaces in the chamber

12: upper electrode 14: base

14a: extension base 16: insulation member

18: lower electrode 20: electrostatic chuck

22: insulation plate 24: ceramic plate

26: center support 28, 30: side support

38: baffle

The present invention relates to a structure of a plasma processing apparatus, and more particularly, to a structure of a plasma processing apparatus capable of preventing unnecessary plasma from being generated in both spaces inside a chamber.

In general, in the process of manufacturing a flat panel display device such as an LCD, a plasma processing apparatus that performs a predetermined process on a substrate using plasma is used. First, a process of performing plasma processing on the semiconductor wafer or the liquid crystal substrate will be described. A load lock chamber which carries in or out a semiconductor wafer or liquid crystal substrate (hereinafter referred to as "substrate") loaded in a substrate storage device (hereinafter referred to as "cassette") by a transport robot and circulates vacuum and atmospheric pressure. Into the chamber and pumped to make the inside of the load lock chamber into a vacuum state, and then vacuumed, and then the transfer means is operated to move the substrate to the transfer chamber.

The transfer chamber to which the substrate is transferred is in communication with a plurality of process chambers that maintain a vacuum state, and the transfer chamber carries in and out of each process chamber through transfer means, where each process chamber The substrate brought into is placed on the mounting table positioned on the upper part of the lower electrode, the process gas is introduced through the micro holes formed in the lower part of the upper electrode, and the upper and lower electrodes are externally supplied with the introduced gas. It causes an electrical discharge to perform a plasma process on the surface of the substrate.

The upper and lower electrodes of the above-described process chamber are respectively installed above and below the inside of the chamber, and insulators are provided on both sides of the lower electrode on which the substrate, which is a target of plasma processing, is loaded. The above-mentioned electrode is generally aluminum, and is a relatively inexpensive material for processing semiconductors, and is widely used, and chemical reaction and high voltage of plasma formed by discharge of gas introduced into the electrode according to high voltage applied between upper and lower electrodes. Protect each electrode from

In addition, since the plasma process may cause corrosion to aluminum, a relatively inert ceramic material such as an aluminum oxide (Al 2 O 3) coating is used to protect the surface of the electrode made of aluminum.

In such a plasma processing apparatus, a substrate is placed between an upper electrode and a lower electrode, and plasma is generated in a space between both electrodes to perform a predetermined treatment on the substrate. At this time, a high frequency power is applied to one of the two electrodes, and the other electrode is grounded.

1 is a cross-sectional view of a conventional plasma processing apparatus, and FIG. 2 is an enlarged view of portion "A" shown in FIG.

In the conventional plasma processing apparatus, as shown in FIGS. 1 and 2, an upper electrode 12 is provided in an upper region of the chamber 10, and is installed in a lower region facing the upper electrode 12, but the chamber described above. (10) the base 14 which is provided spaced apart from the bottom by a predetermined distance, the insulating member 16 to be loaded on the upper region of the base 14, and the upper region of the insulating member 16 And a lower electrode 18 including a cooling plate, and an electrostatic chuck 20 mounted on the upper region of the lower electrode 18.

In order to protect the upper electrode 12 and the lower electrode 18 from the plasma during the process, the remaining portions except the electrode surface, that is, the upper region edge and each side surface are attached to each other by the insulating plate 22, and then the ceramic plate on the outside thereof. (24) was attached.

In addition, a high frequency power supply rod (not shown) to which a high frequency power RF is applied from the outside of the chamber 10 is installed on the bottom surface of the lower electrode 18. The high frequency power supply rod (not shown) is installed in contact with the bottom surface of the lower electrode 18 through a center support 26 for supporting a central portion of the base 14.

Meanwhile, a cooling path through which coolant flows is formed in the lower electrode 18 to cool the heat generated by the lower electrode 18. The cooling water is provided to a cooling path provided inside the lower electrode 18 through a cooling path installed through the side supports 28 and 30 supporting the four corner portions of the base 14.

A baffle 38 is provided between the inner wall of the chamber 10 and the ceramic plate 24. The baffle 38 serves as a passage for exhausting the unreacted gas remaining in the chamber 10 and the polymer generated during the process to the lower portion of the chamber 10 during or after the process is performed. After the polymer is first blocked, the polymer can be discharged through the exhaust holes formed at the corners of the lower surface of the process chamber.

According to the conventional plasma processing apparatus described above, since the side wall of the chamber 10 is grounded and a high voltage of RF is applied to the cooling plate 18, unnecessary plasma is not required in both side spaces 11 in the chamber shown in FIG. 2. There is a fear that this will occur.

In addition, since a cooling path is formed only in the lower electrode, the cooling speed of the lower electrode is delayed, deformation of the lower electrode may occur due to high heat, and arcing remains.

The present invention was devised to solve the above problems of the prior art, and by extending the grounded base to the side of the cold plate to which the RF high pressure is applied, it is suitable to prevent unnecessary plasma generation in both spaces in the chamber. It is an object of the present invention to provide a plasma processing apparatus.

In addition, an object of the present invention is to provide a plasma processing apparatus capable of minimizing deformation of the lower electrode and preventing occurrence of arcing by forming a cooling path in the base to cool the heat generated from the lower electrode.

In order to solve the above technical problem, a constituent means of the plasma processing apparatus of the present invention is to generate a plasma inside a vacuum chamber to perform a predetermined process on a substrate, wherein the chamber is disposed above the chamber. An upper electrode is provided, and a base, an insulating member, a lower electrode provided with a cooling plate, and an electrostatic chuck are sequentially stacked on the lower side of the chamber to face the upper electrode, and the base extends vertically along the lower electrode side. It is characterized in that it further comprises an extension base.

In addition, it is preferable to form an extension base included in the base higher than the upper surface of the lower electrode to prevent unnecessary plasma from occurring in both spaces of the chamber.

In addition, it is preferable to form a cooling path through which cooling water flows inside the base and the extension base, such that the lower electrode provided with the cooling plate can be cooled not only in contact but also in a non-contact manner by the cooling plate. .

Hereinafter, with reference to the accompanying drawings will be described in detail the operation and preferred embodiment of the plasma processing apparatus of the present invention consisting of the above configuration means.

3 is a cross-sectional view of the plasma processing apparatus according to the embodiment of the present invention, and FIG. 4 is an enlarged view of part “B” shown in FIG. 3.

3 and 4, the plasma processing apparatus of the present invention is provided with an upper electrode 12 in an upper region of the chamber 10, and is installed in a lower region opposite to the upper electrode 12, A base 14 provided spaced apart from the bottom of the chamber 10 by a predetermined distance, an insulating member 16 mounted on an upper region of the base 14, and an upper region of the insulating member 16. And a lower electrode 18 including a cooling plate, and an electrostatic chuck 20 mounted on an upper region of the lower electrode 18.

The upper electrode 12 and the lower electrode 18 attach the remaining portion except the electrode surface, that is, the upper region edge portion and each side surface with the insulating plate 22 to be protected from the plasma during the process.

The side of the insulating plate 22 attached to each side of the insulating plate 22 is further provided with an extension base 14a which performs the same role as the base 14. That is, the base 14 further includes an extension base 14a provided vertically along the side of the lower electrode 18.

As the extension base 14a is provided vertically along the lower electrode 18 side, both side spaces 11 in the chamber 10 positioned between the side wall of the chamber 10 and the extension base 14a which are grounded. Plasma generation can be prevented.

That is, conventionally, both spaces 11 in the chamber 10 are located between the side wall of the chamber 10 which is grounded and the lower electrode 18 to which the RF high voltage is applied. Although there was a possibility that an unnecessary plasma was formed in 11), by providing the extension base 14a as in the embodiment of the present invention, it is possible to prevent unnecessary plasma generation in both spaces 11 in the chamber 10.

Preferably, the extension base 14a extending vertically along the lower electrode 18 side is formed higher than the upper surface of the lower electrode 18. In other words, the RF high voltage applied to the lower electrode 18 and the ground applied to the sidewall of the chamber 10 completely prevent unnecessary plasma from being generated in both spaces 11 in the chamber 10. It is preferable to make the height of the extension base 14a higher than the height of the upper surface of the lower electrode 18.

In addition, a cooling pass is preferably formed in the base 14 and the extension base 14a. As described above, a cooling path may be formed on the base 14 and the extension base 14a as well as the lower electrode 18 to cool the heat generated from the lower electrode.

Meanwhile, in order to prevent the upper electrode 12 and the lower electrode from being damaged from the plasma as the process proceeds, the upper surface of the insulating plate 22 positioned at the side of the extension base 14a and the edge of the electrode surface of the insulating plate 22. The ceramic plate 24 is attached to it.

A baffle 38 is provided between the inner wall of the chamber 10 and the ceramic plate 24. The baffle 38 serves as a passage for exhausting the unreacted gas remaining in the chamber 10 and the polymer generated during the process to the lower portion of the chamber 10 during or after the process is performed. After the polymer is first blocked, the polymer can be discharged through the exhaust holes formed at the corners of the lower surface of the process chamber.

According to the plasma processing apparatus of the present invention having the above-described configuration, operation, and preferred embodiments, since both side spaces in the chamber are present between the sidewall of the chamber being grounded and the extended base, unnecessary plasma is generated in both spaces in the chamber. There is an effect that can be suppressed.

In addition, a cooling path is formed inside the base to cool the heat generated from the lower electrode as well as non-contact as well as contact cooling by the cooling plate provided on the lower electrode, thereby preventing deformation of the lower electrode due to high heat. It prevents arcing occurring in the chamber, thereby minimizing equipment damage.

Claims (3)

A plasma processing apparatus for generating a plasma inside a chamber in a vacuum state to perform a predetermined treatment on a substrate. An upper electrode is provided above the chamber, and a base, an insulating member, a lower electrode provided with a cooling plate, and an electrostatic chuck are sequentially stacked below the chamber to face the upper electrode. And an extended base extending vertically from the base along the lower electrode side and formed higher than the upper surface of the lower electrode. A plasma processing apparatus for generating a plasma inside a chamber in a vacuum state to perform a predetermined treatment on a substrate. An upper electrode is provided above the chamber, and a base, an insulating member, a lower electrode provided with a cooling plate, and an electrostatic chuck are sequentially stacked below the chamber to face the upper electrode. An extension base extending vertically from the base along the lower electrode side; The base and the extension base is a plasma processing apparatus, characterized in that a cooling path through which cooling water flows is formed. The method of claim 1, The base and the extension base is a plasma processing apparatus, characterized in that a cooling path through which cooling water flows is formed.

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