JPS6427251A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6427251A
JPS6427251A JP18386687A JP18386687A JPS6427251A JP S6427251 A JPS6427251 A JP S6427251A JP 18386687 A JP18386687 A JP 18386687A JP 18386687 A JP18386687 A JP 18386687A JP S6427251 A JPS6427251 A JP S6427251A
Authority
JP
Japan
Prior art keywords
gnd
power supply
outer leads
semiconductor device
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18386687A
Other languages
Japanese (ja)
Inventor
Koji Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP18386687A priority Critical patent/JPS6427251A/en
Publication of JPS6427251A publication Critical patent/JPS6427251A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce inductance, and to prevent the malfunction of a semiconductor device being generated by inductance by directly connecting a capacitor to outer leads for a power supply and a GND in the semiconductor device. CONSTITUTION:A semiconductor chip 1 with pads 4A, 4B for a GND and a power supply is fixed onto a package 2, to which outer leads 3 including outer leads 3A, 3B for the GND and the power supply are formed and which consists of ceramics, etc. The pads 4A, 4B for the GND and the power supply are connected respectively to the outer leads 3A, 3B for the GND and the power supply by bonding wires 6A, 6B. A capacitor 5 is fastened onto the the outer leads 3A, 3B, and a terminal 7A for the GND and a terminal 7B for the power supply for the capacitor 5 are directly connected respectively to the outer lead 3A for the GND and the outer lead 3B for the power supply. Accordingly, inductance is lowered, noises are reduced, and the generation of a malfunction can be prevented.
JP18386687A 1987-07-22 1987-07-22 Semiconductor device Pending JPS6427251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18386687A JPS6427251A (en) 1987-07-22 1987-07-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18386687A JPS6427251A (en) 1987-07-22 1987-07-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6427251A true JPS6427251A (en) 1989-01-30

Family

ID=16143198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18386687A Pending JPS6427251A (en) 1987-07-22 1987-07-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6427251A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04277665A (en) * 1991-03-06 1992-10-02 Nec Corp Socket of semiconductor ic device
US6625005B2 (en) 2000-07-11 2003-09-23 Kabushiki Kaisha Toshiba Semiconductor circuit device having power and ground lines adapted for high-frequency operation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04277665A (en) * 1991-03-06 1992-10-02 Nec Corp Socket of semiconductor ic device
US6625005B2 (en) 2000-07-11 2003-09-23 Kabushiki Kaisha Toshiba Semiconductor circuit device having power and ground lines adapted for high-frequency operation

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