JPS6316240A - Pressure detector - Google Patents
Pressure detectorInfo
- Publication number
- JPS6316240A JPS6316240A JP16039286A JP16039286A JPS6316240A JP S6316240 A JPS6316240 A JP S6316240A JP 16039286 A JP16039286 A JP 16039286A JP 16039286 A JP16039286 A JP 16039286A JP S6316240 A JPS6316240 A JP S6316240A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- housing
- ring
- sensing body
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 3
- 229910017709 Ni Co Inorganic materials 0.000 claims 1
- 229910003267 Ni-Co Inorganic materials 0.000 claims 1
- 229910003262 Ni‐Co Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 102100033121 Transcription factor 21 Human genes 0.000 description 6
- 101710119687 Transcription factor 21 Proteins 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は圧力検出器に関し、特に高圧流体の圧力検出を
精度良く行ない得るとともに加工組付けの手間を要さな
い圧力検出器に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pressure detector, and more particularly to a pressure detector that can accurately detect the pressure of high-pressure fluid and does not require the effort of processing and assembly.
[従来の技術] 従来の圧力検出器の代表的構造を第9図に示す。[Conventional technology] A typical structure of a conventional pressure detector is shown in FIG.
圧力検出器は筒状ハウジング2を有し、該ハウジング2
には小径の下半部外周にネジ部2aが形成されて、該ネ
ジ部2aにより測定すべき圧力室の室壁に設けた取付穴
に螺着固定される。上記ハウジング2の大径の本体内に
は熱膨張率の小さい金属よりなるセンシングボデー1−
が設けである。The pressure sensor has a cylindrical housing 2, the housing 2
A threaded portion 2a is formed on the outer periphery of the lower half of the pressure chamber having a small diameter, and is screwed into a mounting hole provided in the wall of the pressure chamber to be measured using the threaded portion 2a. Inside the large diameter main body of the housing 2 is a sensing body 1 made of metal with a small coefficient of thermal expansion.
is the provision.
センシングボデー1−は筒内を圧力導入路Pとした上端
開鎖の筒体で、厚肉板状の上端部をハウジング2内壁の
段付部に当接ぜしめ、筒状本体はハウジング2の下半部
内に挿通されて下端周縁をハウジング先端開口に溶接固
定しである。センシングボデー1−の上端部は中心を薄
肉として受圧ダイヤフラム11としてあり、該ダイヤフ
ラム11の上面には金属歪ゲージ3−が接合しておる。The sensing body 1- is a cylindrical body with an open top end and a pressure introduction path P inside the cylinder.The thick plate-like upper end portion is brought into contact with a stepped portion of the inner wall of the housing 2, and the cylindrical body is placed under the housing 2. It is inserted into the half and the lower end periphery is welded and fixed to the housing tip opening. The upper end of the sensing body 1- has a thin center wall as a pressure receiving diaphragm 11, and a metal strain gauge 3- is joined to the upper surface of the diaphragm 11.
歪ゲージ3−の出力信号はリードワイヤ31を経て、ハ
ウジング2の上端開口に密嵌されたコネクタ4より取り
出される。The output signal of the strain gauge 3- is taken out via a lead wire 31 from a connector 4 tightly fitted into an opening at the upper end of the housing 2.
[発明が解決しようとする問題点]
上記構造の圧力検出器では、ハウジング2の気密性を保
証するためにこれとセンシングボデー1′の溶接を慎重
に行なう必要があり、またセンシングボデー1′も精度
良く加工する必要があって製作組付けに手間を要すると
いう問題があった。[Problems to be Solved by the Invention] In the pressure detector having the above structure, it is necessary to carefully weld the housing 2 and the sensing body 1' to ensure airtightness of the housing 2. There is a problem in that it requires precise processing and requires time and effort to manufacture and assemble.
さらに、金属歪ゲージ3−は出力感度が小さいため、信
号増幅およびこれに伴なうノイズ除去等で信号処理回路
が複雑になるという問題があった。Furthermore, since the metal strain gauge 3- has a low output sensitivity, there is a problem in that the signal processing circuit becomes complicated due to signal amplification and accompanying noise removal.
本発明はこれらの問題点を一挙に解決しようとするもの
で、製作組付けに手間を要することなく確実にハウジン
グの気密性が保たれ、しかも高感度の出力信号が得られ
る高圧測定用の圧力検出器を提供することを目的とする
。The present invention aims to solve these problems all at once, and is a pressure measurement system that reliably maintains the airtightness of the housing without requiring much effort in manufacturing and assembling, and that also provides a highly sensitive output signal. The purpose is to provide a detector.
[問題点を解決するための手段]
第1図において、ハウジング2の先端部には圧力室とハ
ウジング2内を連通する圧力導入路21が貫設され、該
圧力導入路21の内端開口にはこれを塞ぐようにセンシ
ングボデー1が設けである。[Means for solving the problem] In FIG. 1, a pressure introduction passage 21 that communicates between the pressure chamber and the inside of the housing 2 is provided through the tip of the housing 2, and an inner end opening of the pressure introduction passage 21 is provided. The sensing body 1 is provided to block this.
センシングボデー1は上記内端開口に対向する部分を薄
肉として受圧ダイヤフラム11となすとともに、内端開
口周縁にはOリング5を設けてこれに上記センシングボ
デー1を気密的に圧接せしめである。そして、上記受圧
ダイヤフラム11の内側面には半導体歪ゲージを形成し
た半導体チップ3が接合しである。The sensing body 1 has a thin portion facing the inner end opening to form a pressure receiving diaphragm 11, and an O-ring 5 is provided on the periphery of the inner end opening to which the sensing body 1 is hermetically pressed. A semiconductor chip 3 on which a semiconductor strain gauge is formed is bonded to the inner surface of the pressure receiving diaphragm 11.
[作用、効果]
上記構造の圧力検出器は、強度の大きい材料で構成した
センシングボデー1の一部を受圧ダイヤフラム11とし
たから高圧測定用として好適に使用できるとともに、セ
ンシングボデー1をOリング5を介してハウジング2の
内壁に圧接する構造としたから製作組付けに手間を要す
ることなく確実にハウジング2の気密性を保つことがで
きる。[Functions and Effects] The pressure detector having the above structure can be suitably used for high pressure measurement because the pressure receiving diaphragm 11 is a part of the sensing body 1 made of a strong material. Since the structure is such that the housing 2 is pressed into contact with the inner wall of the housing 2 through the housing 2, the airtightness of the housing 2 can be reliably maintained without requiring much effort in manufacturing and assembling.
さらに、受圧ダイヤフラム11に半導体歪ゲージを形成
した半導体チップ3を一体に接合しているから、高感度
かつリニヤな出力信号を得ることができる。Furthermore, since the semiconductor chip 3 on which the semiconductor strain gauge is formed is integrally bonded to the pressure receiving diaphragm 11, a highly sensitive and linear output signal can be obtained.
[実施例]
第1図において、検出器ハウジング2は異径の柱体であ
り、小径の下半部には外周にネジ部2aが形成され、大
径の上半部外周は六角面としておる。ハウジング2の中
心には圧力導入路21が貫通しており、その上端はハウ
ジング2上面の円形凹所22内に開口している。上記凹
所22の底面には上記圧力導入路21の開口を囲むよう
に周状溝23が形成され、該溝23内にOリング5が配
設しである。[Example] In FIG. 1, the detector housing 2 is a columnar body with different diameters, the lower half of the small diameter has a threaded portion 2a formed on the outer periphery, and the outer periphery of the upper half of the large diameter has a hexagonal surface. . A pressure introduction passage 21 passes through the center of the housing 2, and its upper end opens into a circular recess 22 on the upper surface of the housing 2. A circumferential groove 23 is formed on the bottom surface of the recess 22 so as to surround the opening of the pressure introduction path 21, and an O-ring 5 is disposed within the groove 23.
上記凹所22内には熱膨張率の小さいFe−N1−Go
系合金よりなる円板状センシングボデー1が挿置してあ
り、該センシングボデー1は上面外周部に当接する押え
リング6により上記Oリング5に圧接せしめられている
。押えリング6はその外周面のネジ部を上記凹所22内
周のネジ部22aに螺合せしめである。上記センシング
ボデー1は圧力導入路21に対向する中心部を薄肉とな
し受圧ダイヤフラム11としである。Inside the recess 22, Fe-N1-Go, which has a small coefficient of thermal expansion, is
A disc-shaped sensing body 1 made of a metal alloy is inserted, and the sensing body 1 is pressed against the O-ring 5 by a retaining ring 6 that abuts the outer periphery of the upper surface. The retainer ring 6 has a threaded portion on its outer circumferential surface screwed into a threaded portion 22a on the inner circumference of the recess 22. The sensing body 1 has a thin wall at the center facing the pressure introduction path 21, and serves as the pressure receiving diaphragm 11.
そして、受圧ダイヤフラム11の上面には、第2図に示
す如く、ガラス層71により半導体チップ3が接合しで
ある。上記ガラス1i71は酸化鉛を主成分とした非晶
質ガラスよりなり、フィラー粒径は平均2−0μmで最
大でも20μm以下である。ガラス層71の厚みは20
μm〜60μmとし、ガラス層71を形成するセンシン
グボデー1の表面粗さは0.5μm〜3μmである。The semiconductor chip 3 is bonded to the upper surface of the pressure-receiving diaphragm 11 by a glass layer 71, as shown in FIG. The glass 1i71 is made of amorphous glass containing lead oxide as a main component, and the filler particle size is 2-0 μm on average and 20 μm or less at maximum. The thickness of the glass layer 71 is 20
The surface roughness of the sensing body 1 on which the glass layer 71 is formed is 0.5 μm to 3 μm.
半導体チップ3はシリコン単結晶板よりなり、第3図に
示す如くチップ上の4ケ所にボロン(B)等の不純物を
ドープして半導体歪ゲージ31.32.33.34を形
成する。歪ゲージ31.33は受圧ダイヤフラム11の
中心部直上に位置し、歪ゲージ32.34は受圧ダイヤ
フラム11の周縁部直上に位置している。これら歪ゲー
ジ31〜34はチップ3上に形成した電極リード(図略
)により互いに接続されて、第4図に示す如きフルブリ
ッジ回路を構成している。The semiconductor chip 3 is made of a silicon single crystal plate, and as shown in FIG. 3, impurities such as boron (B) are doped at four locations on the chip to form semiconductor strain gauges 31, 32, 33, and 34. The strain gauges 31 and 33 are located directly above the center of the pressure receiving diaphragm 11, and the strain gauges 32 and 34 are located directly above the periphery of the pressure receiving diaphragm 11. These strain gauges 31 to 34 are connected to each other by electrode leads (not shown) formed on the chip 3 to form a full bridge circuit as shown in FIG. 4.
センシングポデー1上には上記半導体チップ3を囲んで
ターミナル板72(第2図)が設けてあリ、上記歪ゲー
ジ31〜34はワイヤボンディング線76により上記タ
ーミナル板72上に形成した電極(回路)に接続しであ
る。半導体チップ3の上方には信号処理回路基板73が
配設してあり、該基板73はリードピン74により上記
ターミナル板72上に支持せしめられるとともに、信号
処理回路はリードピン74を介してターミナル板72の
上記電極に接続されている。A terminal plate 72 (FIG. 2) is provided on the sensing pod 1 to surround the semiconductor chip 3, and the strain gauges 31 to 34 are connected to electrodes ( circuit). A signal processing circuit board 73 is disposed above the semiconductor chip 3, and the board 73 is supported on the terminal board 72 by lead pins 74, and the signal processing circuit is connected to the terminal board 72 via the lead pins 74. connected to the above electrode.
ハウジング2の上面外周縁には筒状カバー24が接合さ
れ、該カバー24の上方開口にはリードホルダ81が密
嵌しておる。上記信号処理回路基板73より延出するリ
ード線75は上記リードホルダ81を貫通して検出器外
へ延びている。なお、図中82.83はシール樹脂であ
り、84はシールリングでおる。A cylindrical cover 24 is joined to the outer periphery of the upper surface of the housing 2, and a lead holder 81 is tightly fitted into the upper opening of the cover 24. A lead wire 75 extending from the signal processing circuit board 73 passes through the lead holder 81 and extends outside the detector. In the figure, 82 and 83 are sealing resins, and 84 is a sealing ring.
上記構造の圧力検出器において、圧力導入路21を経て
流体圧が受圧ダイヤフラム11に作用すると、ダイヤフ
ラム11は圧力に応じて変形し、変形歪に応じて歪ゲー
ジ31〜34の抵抗値が変化する。抵抗値変化は信号処
理回路を経てリード線75により圧力信号として取り出
される。In the pressure detector having the above structure, when fluid pressure acts on the pressure receiving diaphragm 11 through the pressure introduction path 21, the diaphragm 11 deforms according to the pressure, and the resistance values of the strain gauges 31 to 34 change according to the deformation strain. . The change in resistance value is extracted as a pressure signal by a lead wire 75 via a signal processing circuit.
本発明では受圧ダイヤフラム1]を強度の大きい材料で
構成したから、高圧に対しても破損することなく追従作
動し、しかも上記ダイヤフラム11に、半導体歪ゲージ
31〜34を形成した半導体チップ3を一体に接合した
から高感度かつりニヤな出力信号を得ることができる。In the present invention, the pressure-receiving diaphragm 1] is made of a material with high strength, so it can follow high pressure without being damaged, and the semiconductor chip 3 on which the semiconductor strain gauges 31 to 34 are formed is integrated into the diaphragm 11. Since it is bonded to a high sensitivity and sharp output signal, it is possible to obtain a high sensitivity and sharp output signal.
ざらに、本発明においては、センシングポデー1をOリ
ング5を介してハウジング2の内壁に圧接することによ
りハウジング2内の気密性を保つようにしたから、製作
組付けが容易でおる。特に本実施例ではセンシングボデ
ー1を平板状としたことにより、その製作工数を大幅に
低減できる。In general, in the present invention, the sensing body 1 is pressed against the inner wall of the housing 2 via the O-ring 5 to maintain airtightness within the housing 2, so that manufacturing and assembly are easy. In particular, in this embodiment, by forming the sensing body 1 into a flat plate shape, the number of manufacturing steps can be significantly reduced.
半導体チップ3の接合部周囲のセンシングポデー1上面
に、第5図に示す如き一定深さの溝12を形成すると、
センシングポデー1圧接時の歪が上記チップ3に伝達す
るのを有効に阻止できる。When a groove 12 of a constant depth as shown in FIG. 5 is formed on the upper surface of the sensing pod 1 around the joint of the semiconductor chip 3,
It is possible to effectively prevent the strain generated when the sensing pod 1 is pressed into contact with the chip 3 from being transmitted to the chip 3.
第6図には本発明の伯の実施例を示す。図において、セ
ンシングポデー1tよ段付き異径の筒体としており、上
端開口は薄肉部で閉鎖して受圧ダイヤフラム11となす
とともに受圧ダイヤフラム1]の上面には半導体歪ゲー
ジを形成した半導体チップ3が接合しである。センシン
グポデー1は、その軸心を圧力導入路21に一致せしめ
て、大径の下半部をハウジング2の凹所22内にtil
lしてあり、センシングポデー1の開口縁と凹所22底
面の圧力導入ロ21開口縁の間にOリング5が挿置しで
ある。FIG. 6 shows a further embodiment of the present invention. In the figure, the sensing body 1t is a stepped cylinder with different diameters, and the upper end opening is closed with a thin wall part to form a pressure receiving diaphragm 11, and a semiconductor chip 3 on which a semiconductor strain gauge is formed on the upper surface of the pressure receiving diaphragm 1. is the joint. The sensing pod 1 aligns its axis with the pressure introduction path 21 and tilts the lower half of the large diameter into the recess 22 of the housing 2.
An O-ring 5 is inserted between the opening edge of the sensing pod 1 and the opening edge of the pressure introduction hole 21 on the bottom surface of the recess 22.
上記凹所22の開口周縁にはかしめ用の立壁25が形成
しており、該立壁25を、図示の如くセンシングポデー
1の段付面上に折り曲げてこれを抑圧固定する。A standing wall 25 for caulking is formed around the opening of the recess 22, and the standing wall 25 is bent onto the stepped surface of the sensing pod 1 as shown in the figure to suppress and fix it.
かかる構造によっても上記実施例と同様の効果を奏する
上に、組付けはかしめによりさらに容易なものとなる。Such a structure also provides the same effects as those of the above embodiment, and further facilitates assembly by caulking.
この場合、かしめ時の歪が受圧ダイヤフラム11に波及
しないように、第7図あるいは第8図に示す如く、かし
め部と受圧ダイヤフラム11の間のセンシングボデー面
に周状の溝]2を形成すると良い。In this case, in order to prevent distortion during caulking from spreading to the pressure receiving diaphragm 11, a circumferential groove]2 is formed on the sensing body surface between the caulking part and the pressure receiving diaphragm 11, as shown in FIG. 7 or 8. good.
第1図は本発明の第1の実施例を示す圧力検出器の全体
断面図、第2図はセンシングボデー取付部の拡大断面図
、第3図は半導体チップの平面図、第4図は半導体歪ゲ
ージの接続図、第5図は本発明の第2の実施例を示すセ
ンシングポデーの拡大断面図、第6図は本発明の第3の
実施例を示すセンシングボデー取付部の拡大断面図、第
7図、第8図はそれぞれ本発明の第4および第5の実施
例を示すセンシングポデーの拡大断面図、第9図は従来
例を示す圧力検出器の全体断面図で必る。
1・・・・・・センシングポデー
11・・・・・・受圧ダイヤフラム
2・・・・・・ハウジング
21・・・・・・圧力導入路
3・・・・・・半導体チップ
31.32.33.34・・・・・・半導体歪ゲージ5
・・・・・・01ノング
第1図
v、3図 第4図
第5図
第6図
第7図 、8゜
第9図Fig. 1 is an overall sectional view of a pressure detector showing a first embodiment of the present invention, Fig. 2 is an enlarged sectional view of a sensing body attachment part, Fig. 3 is a plan view of a semiconductor chip, and Fig. 4 is a semiconductor chip. A connection diagram of a strain gauge, FIG. 5 is an enlarged cross-sectional view of a sensing body showing a second embodiment of the present invention, and FIG. 6 is an enlarged cross-sectional view of a sensing body mounting portion showing a third embodiment of the present invention. , 7 and 8 are enlarged sectional views of sensing pods showing fourth and fifth embodiments of the present invention, respectively, and FIG. 9 is an overall sectional view of a pressure detector showing a conventional example. 1... Sensing pod 11... Pressure receiving diaphragm 2... Housing 21... Pressure introduction path 3... Semiconductor chip 31.32. 33.34...Semiconductor strain gauge 5
・・・・・・01Nong Fig. 1 v, 3 Fig. 4 Fig. 5 Fig. 6 Fig. 7, 8゜ Fig. 9
Claims (2)
たハウジングには、上記先端部に圧力室とハウジング内
を連通する圧力導入路を貫設するとともに該圧力導入路
の内端開口にはこれを塞ぐように強度の大きい材料より
なるセンシングボデーを設け、上記センシングボデーは
上記内端開口に対向する部分を薄肉として受圧ダイヤフ
ラムとなすとともに内端開口周縁にはOリングを設けて
これに上記センシングボデーを気密的に圧接せしめ、か
つ上記受圧ダイヤフラムの内側面には半導体歪ゲージを
形成した半導体チップを接合したことを特徴とする圧力
検出器。(1) The housing, which is fixed to the pressure chamber wall and has its tip facing into the pressure chamber, is provided with a pressure introduction path that communicates between the pressure chamber and the inside of the housing, and an inner end of the pressure introduction path. A sensing body made of a strong material is provided in the opening so as to close it, and the sensing body has a thin portion facing the inner end opening to form a pressure receiving diaphragm, and an O-ring is provided around the inner end opening. A pressure detector characterized in that the sensing body is brought into airtight pressure contact therewith, and a semiconductor chip on which a semiconductor strain gauge is formed is bonded to the inner surface of the pressure receiving diaphragm.
で構成した特許請求の範囲第1項記載の圧力検出器。(2) The pressure detector according to claim 1, wherein the sensing body is made of a Fe-Ni-Co alloy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16039286A JPS6316240A (en) | 1986-07-08 | 1986-07-08 | Pressure detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16039286A JPS6316240A (en) | 1986-07-08 | 1986-07-08 | Pressure detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6316240A true JPS6316240A (en) | 1988-01-23 |
Family
ID=15713964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16039286A Pending JPS6316240A (en) | 1986-07-08 | 1986-07-08 | Pressure detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6316240A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0289339U (en) * | 1988-12-28 | 1990-07-16 | ||
JPH0289319U (en) * | 1988-12-28 | 1990-07-16 | ||
US5872315A (en) * | 1996-02-26 | 1999-02-16 | Denso Corporation | Pressure detecting apparatus |
JP4014653B2 (en) * | 1997-12-09 | 2007-11-28 | 北陸電気工業株式会社 | Capacitance type pressure sensor unit |
-
1986
- 1986-07-08 JP JP16039286A patent/JPS6316240A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0289339U (en) * | 1988-12-28 | 1990-07-16 | ||
JPH0289319U (en) * | 1988-12-28 | 1990-07-16 | ||
US5872315A (en) * | 1996-02-26 | 1999-02-16 | Denso Corporation | Pressure detecting apparatus |
JP4014653B2 (en) * | 1997-12-09 | 2007-11-28 | 北陸電気工業株式会社 | Capacitance type pressure sensor unit |
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