JPS58149168A - Grinding method - Google Patents

Grinding method

Info

Publication number
JPS58149168A
JPS58149168A JP57029430A JP2943082A JPS58149168A JP S58149168 A JPS58149168 A JP S58149168A JP 57029430 A JP57029430 A JP 57029430A JP 2943082 A JP2943082 A JP 2943082A JP S58149168 A JPS58149168 A JP S58149168A
Authority
JP
Japan
Prior art keywords
holder
polishing
work
surface plates
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57029430A
Other languages
Japanese (ja)
Inventor
Arata Sakaguchi
阪口 新
Masaaki Iguchi
雅章 井口
Kunihiro Ito
邦宏 伊藤
Kenichi Taguchi
田口 謙一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP57029430A priority Critical patent/JPS58149168A/en
Publication of JPS58149168A publication Critical patent/JPS58149168A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To simultaneously grind both sides of a work, by interposing a sheet- shaped holder having work holding holes between upper and bottom rotary grinding surface plates and supporting said holder with a holder supporting bed. CONSTITUTION:A holder 22 is interposed between upper and bottom grinding surface plates 20, 21, and its external edge part or external and internal edge parts are fixed to holder supporters 25 by tightening tools 25. A work 23 is held to work holding holes 24 of the holder. The upper and bottom grinding surface plates and the holder supporter can be independently rotated respectively on the same rotary shaft. While a holder supporting bed is capable of adjusting upper and bottom positions to always horizontally hold the holder. In this way, both sides of a very into work can be simultaneously ground.

Description

【発明の詳細な説明】 本発明ば新mη為つ改良、された研NI簑皺、特l二は
七の厚みが300μm以下の被W工物の両面f同時に研
摩するのに好都合とされる研lIl!装−の構造に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a new and improved polishing method, which is particularly advantageous for simultaneously polishing both surfaces of a workpiece having a thickness of 300 μm or less. Research! This relates to the structure of the equipment.

通常、たとえは水晶、LiTaO3、GGG、の様な単
結晶のほか、セラミラグ、金−からなるウェハーの両面
を研摩するにはウェハーの片面づつ2質C二わたって研
摩する方法か、ウェハーの両面ケ同時に研摩する方法の
いずれかが採用される。
Usually, in order to polish both sides of a wafer made of single crystal such as quartz, LiTaO3, GGG, ceramic lag, or gold, there is a method of polishing two types of C on each side of the wafer, or a method of polishing both sides of the wafer. One of the methods of simultaneously polishing is adopted.

従来、上記ウニへ−會片面づつ研摩するには。Conventionally, to polish the sea urchin one side at a time.

たとえばm1図区:示すようI:、被研摩ウェハ−1の
1〜複数枚を同数状ホルダ2の下面に譬看固足し、該ウ
ェハーを研摩足gI3の研摩面に接触させて、この接触
境界面に研摩液を供給1.tがら、上記ホルダおよび研
Ml!足盤全相互に回転して研摩するか、ああいは1!
2図I:示すようI:固定甲足磐4に適当HV−)状パ
プド5を介して、!−複数個のウェハー保持用の穴6?
有する保持板?f?1看固足し、該六〇にウェハー11
収納した状態で該ウェハーと研摩定118の研摩11!
1’触させて、研摩液の存在下に研摩する方法が知られ
てい為。
For example, as shown in Figure M1: I:, one or more wafers to be polished are firmly placed on the lower surface of the same-shaped holder 2, the wafer is brought into contact with the polishing surface of the polishing foot gI3, and the contact boundary is Supply polishing liquid to the surface 1. t, the above holder and the grinding Ml! All the foot plates must be rotated and polished, or 1!
2 Figure I: As shown I: Fixed instep foot 4 through suitable HV-) shaped papudo 5! - Holes 6 for holding multiple wafers?
Does it have a retaining plate? f? 1 stare at the wafer 11 in the 60
Polishing 11 of the wafer and polishing process 118 in the stored state!
1' There is a known method of polishing in the presence of a polishing solution.

−万、上記ウェハーの両面を同時に研摩するには、暮3
図I:示すように、ドーナツ状の上下研摩定IIM9.
10間g=1〜複数個のキャリアllt妃111−fる
と共に、これらキャリアをそれぞれ夛ンギア12とイン
ターナルギア13との間に係合させて11星運動ができ
るようにし、該キャリアI:設けに穴14のそれぞれに
被研摩ウニ八−1全収容配at、、上紀上下研摩足磐Q
、10.チンギア12およびインターナルギア13分そ
れぞれ同時に回転させながら、研摩液の存在下5二9エ
バーの両面を同一に研摩する方法が知られている。
-If you want to polish both sides of the wafer at the same time,
Figure I: As shown, the doughnut-shaped top and bottom polishing IIM9.
10 g=1 to a plurality of carriers 111-f, and each of these carriers is engaged between the additional gear 12 and the internal gear 13 so that 11 star movements can be performed, and the carrier I: Each of the holes 14 accommodates all of the sea urchins 8-1 to be polished.
, 10. A method is known in which both sides of the 529 Ever are polished in the same manner in the presence of a polishing liquid while rotating the chin gear 12 and the internal gear 13 at the same time.

しかしながら、かかる従来公知の片面づつ2回の研摩工
程でクエへ−の両面を研摩する場合に二は。
However, when polishing both sides of the square using the conventionally known polishing process twice for each side, there are two problems.

その研摩工程が繁雑である、主縦性が劣ゐ、繁雑な研摩
工程を経す間で、特には片面研摩後C二研摩済の面をホ
ルダ下rMに接着固定するに当り研摩面に傷か付き属い
ため、基本FJ4二は両面とも精密研摩を要する加工≦
:は不適であるなどの不利、欠点があり、−万、遊屋遍
動を伴なう両面同時研摩の場合5二は、キャリアをナン
ギアとインデーナルギアの双方に係合して′aM運動さ
せている関係で、このキャリアの薄肉化にri限界があ
り、したがってこの方式で両面研摩のできるウェハーの
厚みは精々3(10μwLマでであって、それ以下の厚
さの被加工物を研摩することは不可能であるという難点
があった。
The polishing process is complicated, the main verticality is poor, and during the complicated polishing process, there are scratches on the polished surface, especially when bonding and fixing the polished surface to the lower rM of the holder after polishing one side. Because of the contact, the basic FJ42 requires precision polishing on both sides ≦
: has disadvantages and drawbacks such as being unsuitable, -10, In the case of double-sided simultaneous polishing accompanied by uneven movement of the play housing, the carrier is engaged with both the number gear and the internal gear to make the 'aM movement. Because of this, there is an RI limit to the thinning of this carrier, and therefore the thickness of a wafer that can be polished on both sides with this method is at most 3 (10μWL), and workpieces with a thickness smaller than that can be polished. The problem was that it was impossible.

本発明はその厚みが300戸wLすいしそれ以下の極薄
ウェハーの両面を同時直二研摩することができる新規か
つ改良された研摩方法を提供するものであって、これに
回転する上下研摩定盤間に、被加工物保持用の穴を1〜
複数個有する薄板状ホルダを介在させ、該ホルダの外R
縁および/lたは内周縁tホルダ支持台に固定支持して
、該ホルダの穴に収容保持した被加工物の両面を同時に
研摩することを特徴とするものであり、本発明の好まし
い実施態様5二おいては、トε上下研摩定盤およびホル
ダ分それぞれ回転駆動されるのである。
The present invention provides a new and improved polishing method capable of simultaneously polishing both sides of an ultra-thin wafer having a thickness of 300 wL or less, and is provided with a rotating upper and lower polishing surface plate. In between, there are holes for holding the workpiece.
A plurality of thin plate-like holders are interposed, and the outer radius of the holder is
A preferred embodiment of the present invention is characterized in that both sides of a workpiece held in and held in a hole of the holder are simultaneously polished by being fixedly supported on a holder support base. At 52, the upper and lower polishing plates and the holder are each rotated.

以下、添付図面に基づいて本発明の詳細な説明する。Hereinafter, the present invention will be described in detail based on the accompanying drawings.

纂4図、璽5図はそれぞれ本発明會実施するだめの装置
の異なる実施例を示すものであって、ます第4図C二示
す実施例#1.上下研摩定920゜21と、これら定盤
間に配置した薄板状ホルダ22とからなり、上記ホルダ
22−1その内4Mg−被加工物2B?収容保持するだ
めの複数の穴24?宵し、蒙だその外周縁かホルダ支持
台25に固定保持されていて、上記上下研摩定l112
0.21およびホルダ支持台25はそれぞれ同一回転軸
上に独立して回転できるようにされている。なお1図中
26#1ホルダ22をホルダ支持台に固定するたく締付
治具であズ、通常多数のボルトを用いてその締付けが行
なわれる。
Figures 4 and 5 respectively show different embodiments of the apparatus for carrying out the present invention, and Embodiment #1 shown in Figure 4C2. It consists of a top and bottom polisher 920° 21 and a thin plate-like holder 22 placed between these surface plates. Multiple holes 24 for housing and holding? In the evening, the outer peripheral edge of the shell is fixedly held on the holder support base 25, and the upper and lower surfaces are polished l112.
0.21 and the holder support base 25 are each rotatable independently on the same rotation axis. Note that the tightening jig used for fixing the #1 holder 22 to the holder support base (26 in Figure 1) is normally tightened using a large number of bolts.

11た、勇S図に示す実施例は、それぞれドーナツ状上
下研摩定!il!20.21と、これら定盤間に配置し
たやはりドーナツ状の薄板状ホルダ22とからなり、こ
のホルダ22はその外周縁お孟び内周縁がそれぞれホル
ダ支持台25a、25b+:[611足保持され、これ
らホルダ支持台はそのj&都で通結されていて、上記上
下研摩定盤20.21およびホルダ支持台25はそれぞ
れ同一回転釉上に独立して回転できるようにされていゐ
11. The embodiment shown in the Yusho S figure is a donut-shaped top and bottom polishing process! Il! 20.21, and a donut-shaped thin plate holder 22 placed between these surface plates. , these holder support stands are connected at their j&to, and the upper and lower polishing surface plates 20, 21 and the holder support stand 25 are configured to be able to rotate independently on the same rotating glaze.

本発明において用いる研摩装置では、上記411i2V
ホルダ22は、締付治具26によってその周縁部でホル
ダ支持台25に固定されるのでああが。
In the polishing apparatus used in the present invention, the above-mentioned 411i2V
The holder 22 is fixed to the holder support base 25 at its peripheral edge by the tightening jig 26, so there is no damage.

この時ホルダ22は水平に近いほど好tしく、またこの
際ホルダC:は適度の張力をかけることが望ましく、そ
れC二よって被加工物の保持状111’に良好なものと
し、研摩精度の向上會はかることができる。また、下定
盤21とホルダ支持台25との上下位ll¥rII整可
能な構造とし、研摩作業中もホルダが全面こわたって水
平C保たれる様にその上下位llを調整することが望ま
しい、さらに、上下足aは同一方向あるいは反対万回!
=、相互に回転でさ、研摩の際5二必要5:応じていず
れの回転方法をも選択採用できるL5gニしておくこと
がよ(、また、ホルダ支持台も時計蝿り、反時針廻りの
いずれの方向i二も回転可能とし、研摩の際に好!しい
方間に回転させ、それによってホルダと共に被加工物l
:公転運動を与えるようにすることが望ましい。勿論、
上下研摩定盤、ホルダ支持台共停止状態とすることを可
能とし、それらの回転数も可変とし、上下定盤、ホルダ
支持台のそれぞれに停止。
At this time, it is preferable for the holder 22 to be as close to horizontal as possible, and at this time, it is desirable to apply an appropriate tension to the holder C2, so that the workpiece can be held in a good manner 111', and the polishing precision can be improved. Improvement can be achieved. In addition, it is desirable that the lower surface plate 21 and the holder support stand 25 have a structure in which the upper and lower sides can be adjusted, and that the upper and lower positions can be adjusted so that the holder is kept horizontal throughout the entire surface during polishing work. Furthermore, the upper and lower legs a can be moved in the same direction or in the opposite direction 10,000 times!
It is recommended to use L5g, which allows you to select and adopt any rotation method depending on the rotation method required when polishing. is rotatable in any direction i2, and is rotated in the preferred direction during polishing, thereby rotating the workpiece l together with the holder.
: It is desirable to give orbital motion. Of course,
It is possible to have both the upper and lower polishing surface plates and the holder support stand in a stopped state, and their rotation speed is also variable, and the upper and lower polishing surface plates and the holder support stand are stopped individually.

回転1回転方向と回転速度等の条件を選択すbことによ
って、研摩時の被研摩ウェハーと上下定盤との相互連動
を巾広く選ぶことができる。
By selecting conditions such as the direction of one rotation and the rotation speed, the mutual interlocking of the wafer to be polished and the upper and lower surface plates during polishing can be widely selected.

しかして1本発明に二おいて特徴とするところは。However, 1) the features of the present invention and 2) are as follows.

@4図区=示すように薄板状ホルダ22の外周縁を(ホ
ルダ支持台251二固定保持するか、あるいは第5図に
示すようにホルダ22の外周縁および内周縁をホルダ支
持台25a、25bに固定保持してワエハーを研摩する
ところミニあり、これC二よってホルダ22の厚み會、
従来公知の遊星運動?伴なう研*5iitt=おけるキ
ャリアの厚みに比較してはるη為に薄いものとすること
ができ、たとえばこのホルダ22をステンレススチール
のような材質tもって構成すると1!kl:はその犀さ
を300声mあるいはそれ以下のものとすることができ
るので、その結果、従来不用能とされていた300μI
IIあるいはそれ以下の厚みのウェハーの両面同時研摩
を容易C二達成でざるのである。
@Figure 4 section = As shown, the outer circumferential edge of the thin plate-like holder 22 is fixedly held on the holder support base 251, or as shown in FIG. There is a mini part that polishes the wafer by holding it fixedly, and this C2 determines the thickness of the holder 22.
Conventionally known planetary motion? Compared to the thickness of the carrier in the accompanying grinder *5iitt=, it can be made much thinner because it is much η, and for example, if this holder 22 is made of a material such as stainless steel, 1! Since kl: can be made to have a density of 300 μm or less, as a result, 300μI, which was previously considered to be unusable, can be
Simultaneous polishing of both sides of a wafer with a thickness of II or less cannot easily be achieved.

上記した通り、X発明の方法は支持台I:固定された+
1板状のホルダ内に被加工@を保持し、上下の研摩定盤
で上下から挾み、研摩材管供給12つつ被加工物と研摩
定盤とを相対fFJ≦二運動させることによって、被加
工物の両面管同時り二研摩するものであって、このj&
本1京理に基づく場合(二はこれに用いる装置の構造、
操業条件は特≦二限だされるものではない、たとえば上
記ホルダと上下研摩定盤のそれぞれの回転方法#1自由
C二選択できるし、また被加工@表面のラップ仕上げ、
ボクツシユ仕上げのいずれに二も適用でき、極端な場合
l二#;化学的I:被加工物g二作用する液体のみによ
る研摩や電解研摩I:も適用でき、さら−二研摩材が遊
離の状態だけでなく、足需表面に固定された場合にも勿
論適用できる。
As mentioned above, the method of invention
The workpiece is held in a plate-shaped holder, sandwiched between the upper and lower polishing plates from above, and the workpiece and the polishing plates are moved relative fFJ≦2 while supplying an abrasive material tube. This j &
Book 1: Based on Kyoto theory (2: structure of the equipment used for this,
The operating conditions are not limited to 2. For example, the rotation method of the holder and the upper and lower polishing plates can be selected from #1, Free C2, and the processing @ lapping the surface.
Both methods can be applied to box finishing, and in extreme cases, chemical I: polishing with only liquid acting on the workpiece and electrolytic polishing I: can also be applied, and furthermore, the abrasive material is free. Of course, it can also be applied to the case where it is fixed to the surface of the foot.

また、装置の構造に関しても、與4図区二ついて上下定
盤の大きさの異る場合、たとえば上定盤の径が小さく、
上定盤を自転させつつホルダ全面直:はゾ均等に運動さ
せるような構造と力1、喝5図区二ついてよ定盤を小さ
な径の円板で構成し、ホルダ上を自転しつつ公転する構
造としてもLく、さらr二研摩条件によってに上下定盤
−1平らでなく凹または凸状の曲面とされてもよい。さ
ら砿二、ここで#1ホルダを水平に保持し、従って被加
工物を平面的(二仕上げる場合について述べてきたが、
本発明の方法は曲面をもつに被加工物の仕上げぽ二も適
用可能であり、この場合は上下定盤、好t L < i
s下足i11全pJ′r望の曲面とし、ホルダをこの面
■:沿った形で保持するよう5二ホルダ支持台ならびに
ホルダ全工夫すればよい。
Also, regarding the structure of the device, if there are two sections in Fig. 4 and the upper and lower surface plates have different sizes, for example, the diameter of the upper surface plate is small,
While rotating the upper surface plate, the entire surface of the holder is straight.The structure is such that the entire surface of the holder is moved evenly, and the surface plate is composed of a disk with a small diameter and revolves around the holder while rotating on its axis. Depending on the polishing conditions, the upper and lower surface plates 1 may have a concave or convex curved surface instead of being flat. Sarakoji: We have described the case where #1 holder is held horizontally and the workpiece is therefore finished flat (two-dimensional).
The method of the present invention can also be applied to the finishing of workpieces with curved surfaces; in this case, upper and lower surface plates, preferably t L < i
The lower leg i11 should have a curved surface exactly as shown in pJ'r, and the holder support stand and the holder should be devised so as to hold the holder along this surface.

【図面の簡単な説明】[Brief explanation of the drawing]

1111因〜iM3図t;いずれも従来公知の研摩方法
の基本的用溝を説明するためのものであって、11図、
喝2図はそれぞれ片面研皐方法、纂3図は両面研摩方法
ケ示す、要部概略図である。 鴫4岩、s5図は本発明tの方法を実施するための研摩
装置のそれぞれ異なる実JlII?Ilケ示すものであ
って、それぞれ(at kt要邪断面図、 +bitX
上定盤ケ取除いてホルダ上万カ傳た平面図である。 (勇1図〜第3図) 1・・・被研摩ウェハー、 2・・・ホルダ。 3.8.Q、10・・・研摩定盤、  4・・・固足用
足需。 5・・・パッド、 6・・・ウェハー保持用穴。 7・・・保持数、  11・・・キャリア。 12・・・チンギア、 1a・・・インターナルギア。 (第4図、巣5図) 20.21・・・研摩定盤、 22・・・ホルダ。 23・・・被研摩ウェハー、 24・・・被圓工物保持用穴。 25・・・ホルダ支持台、26・・・締付治具。 第1図    第1曲 第3図 第4図 (a) (b) 第5図 (a) (b)
1111-iM3 Figure t; All are for explaining the basic grooves of conventionally known polishing methods, and Figure 11,
Figure 2 is a schematic view of the main parts, showing a single-sided polishing method, and Figure 3 is a double-sided polishing method. Figures 4 and 5 show different examples of polishing equipment for carrying out the method of the present invention. (at kt important cross-sectional view, +bitX
FIG. 3 is a plan view showing the upper part of the holder with the upper surface plate removed. (Isamu 1 to 3) 1...Wafer to be polished, 2...Holder. 3.8. Q, 10... Polishing surface plate, 4... Demand for fixed feet. 5... Pad, 6... Wafer holding hole. 7...Number of possessions, 11...Career. 12... Ching gear, 1a... Internal gear. (Figure 4, Figure 5) 20.21... Polishing surface plate, 22... Holder. 23... Wafer to be polished, 24... Hole for holding the wafer to be polished. 25...Holder support base, 26...Tightening jig. Figure 1 Song 1 Figure 3 Figure 4 (a) (b) Figure 5 (a) (b)

Claims (1)

【特許請求の範囲】 1、回転↑ゐ上下研岸可盤間C:、被卯工物保持用の穴
を1〜複数個有する躊教状ホルダを介在させ、該ホルダ
の外周縁および/lたは内周縁をホルダ支持台g二固定
支持して、該ホルダの六i:収容保持した被加工物の両
面を同時1:研摩することを特徴とする研摩方法。 2 上記上下研摩定盤およびホルダをそれぞれ回転駆動
することを特徴とする特許請求の範囲量1項にe載の研
摩方法。
[Claims] 1. Rotation↑ゐC between upper and lower grinding banks: A holder having one or more holes for holding the workpiece is interposed, and the outer peripheral edge of the holder and /l A polishing method characterized by simultaneously polishing both surfaces of a workpiece housed or held in the holder by fixedly supporting the holder or the inner peripheral edge of the holder. 2. The polishing method as set forth in claim 1, characterized in that the upper and lower polishing surface plates and the holder are each rotationally driven.
JP57029430A 1982-02-25 1982-02-25 Grinding method Pending JPS58149168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029430A JPS58149168A (en) 1982-02-25 1982-02-25 Grinding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029430A JPS58149168A (en) 1982-02-25 1982-02-25 Grinding method

Publications (1)

Publication Number Publication Date
JPS58149168A true JPS58149168A (en) 1983-09-05

Family

ID=12275919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029430A Pending JPS58149168A (en) 1982-02-25 1982-02-25 Grinding method

Country Status (1)

Country Link
JP (1) JPS58149168A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5791035A (en) * 1995-09-13 1998-08-11 Nok Corporation Method for making a sensor element
JP2007015105A (en) * 2006-09-25 2007-01-25 Hoya Corp Polishing carrier, polishing method, and manufacturing method of substrate for information recording medium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323095B2 (en) * 1972-12-07 1978-07-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323095B2 (en) * 1972-12-07 1978-07-12

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5791035A (en) * 1995-09-13 1998-08-11 Nok Corporation Method for making a sensor element
JP2007015105A (en) * 2006-09-25 2007-01-25 Hoya Corp Polishing carrier, polishing method, and manufacturing method of substrate for information recording medium

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