JPS5748266A - Transistor - Google Patents
TransistorInfo
- Publication number
- JPS5748266A JPS5748266A JP12308580A JP12308580A JPS5748266A JP S5748266 A JPS5748266 A JP S5748266A JP 12308580 A JP12308580 A JP 12308580A JP 12308580 A JP12308580 A JP 12308580A JP S5748266 A JPS5748266 A JP S5748266A
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- electrode
- resistance
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To realize high emitter resistance of a transistor by a method wherein a P<-> type epitaxial layer having high resistance is constituted on a P<+> type substrate. CONSTITUTION:A transistor cell 22 is formed in an island region 13 being partitioned by a lattice type isolation region 12. Size of a buried layer 16 provided at the lower part of an epitaxial layer 11 is designed as to contain a base region 14 and a collector contact region 17. In an oxide film 23 on the surface, contact holes are formed on the cellector contact region 17, the base region 14, an emitter region 15 and the isolation region 12 using the photo etching technique. After then a conductive metal is evaporated on the oxide film 23 and etching is performed to form a collector electrode 18, a base electrode 19, a connecting electrode 20 to connect the emitter region 15 and the isolaion region 12. Moreover an emitter electrode 21 is formed on the back main face of the substrate 10. The value of emitter resistance can be designed freely by adjusting specific resistance and thickness of the P<-> type epitaxial layer 102.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12308580A JPS5748266A (en) | 1980-09-04 | 1980-09-04 | Transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12308580A JPS5748266A (en) | 1980-09-04 | 1980-09-04 | Transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5748266A true JPS5748266A (en) | 1982-03-19 |
| JPH0132667B2 JPH0132667B2 (en) | 1989-07-10 |
Family
ID=14851828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12308580A Granted JPS5748266A (en) | 1980-09-04 | 1980-09-04 | Transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5748266A (en) |
-
1980
- 1980-09-04 JP JP12308580A patent/JPS5748266A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0132667B2 (en) | 1989-07-10 |
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