JPS5726486A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5726486A
JPS5726486A JP9020580A JP9020580A JPS5726486A JP S5726486 A JPS5726486 A JP S5726486A JP 9020580 A JP9020580 A JP 9020580A JP 9020580 A JP9020580 A JP 9020580A JP S5726486 A JPS5726486 A JP S5726486A
Authority
JP
Japan
Prior art keywords
layer
type
junction
inp
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9020580A
Other languages
Japanese (ja)
Inventor
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9020580A priority Critical patent/JPS5726486A/en
Publication of JPS5726486A publication Critical patent/JPS5726486A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the reverse direction characteristic of a photodetector used with reverse bias operation by selectively removing a part of the exposed surface of an N type semiconductor layer and so forming as to bury a P type semiconductor layer in the removed part. CONSTITUTION:An N type InGaAs layer 12, an N type InGaAs layer 13 and an N type InP layer 14 are sequentially epitaxially grown on an N<+> type InP substrate 11. Then, one region of the layer 14 is selectively removed from the surface. Then, P type InP layer 16 is so formed as to bury the removed region. Thereafter, a P type high impurity density region 16' is formed in the layer 16 in the vicinity of the P-N junction formed with the layers 16, 14. Thus, the layer 16 is formed as a guard ring, and the breakdown of the peripheral edge of the junction can be prevented ven if P-N junction is provided in the InP, and an avalenche amplification factor having extremely acute breakdown and very high amplification can be obtained.
JP9020580A 1980-07-02 1980-07-02 Manufacture of semiconductor device Pending JPS5726486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9020580A JPS5726486A (en) 1980-07-02 1980-07-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9020580A JPS5726486A (en) 1980-07-02 1980-07-02 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5726486A true JPS5726486A (en) 1982-02-12

Family

ID=13991980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9020580A Pending JPS5726486A (en) 1980-07-02 1980-07-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726486A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129880A (en) * 1984-11-28 1986-06-17 Fujitsu Ltd Semiconductor photodetector
US4761383A (en) * 1981-09-28 1988-08-02 Kokusai Denshin Denwa Kabushiki Kaisha Method of manufacturing avalanche photo diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761383A (en) * 1981-09-28 1988-08-02 Kokusai Denshin Denwa Kabushiki Kaisha Method of manufacturing avalanche photo diode
JPS61129880A (en) * 1984-11-28 1986-06-17 Fujitsu Ltd Semiconductor photodetector

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