JPS57162458A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57162458A
JPS57162458A JP56047985A JP4798581A JPS57162458A JP S57162458 A JPS57162458 A JP S57162458A JP 56047985 A JP56047985 A JP 56047985A JP 4798581 A JP4798581 A JP 4798581A JP S57162458 A JPS57162458 A JP S57162458A
Authority
JP
Japan
Prior art keywords
region
type
electrode
layer
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56047985A
Other languages
Japanese (ja)
Other versions
JPH0322063B2 (en
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56047985A priority Critical patent/JPS57162458A/en
Publication of JPS57162458A publication Critical patent/JPS57162458A/en
Publication of JPH0322063B2 publication Critical patent/JPH0322063B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To enhance efficiency of storage of informations of a semiconductor memory unit by a method wherein the unidirectionally conductive type carrier storage region is made to face with the unidirectionally conductive type carrier supply region connected to a bit line interposing the reverse conductive type transfer region between them, and an electrode is provided on the transfer region and the carrier storage region interposing a thin insulating film between them. CONSTITUTION:A thick field oxide film 12 is formed at the circumferential part of an n type Si substrate 11, and B ions are implanted in the substrate 11 using the film thereof as the mask to form a p<+> type barrier layer 14. Then the p type well region 15 is formed on the layer 14 reducing implanting energy and doping quantity, and the n<+> type storage region 16 is provided thereon by P ion implantation. After then, the upper part thereof is covered with a thin gate insulating film 13, a polycrystalline Si layer is pilled up on the whole surface, and patterning is performed to form the gate electrode 17. Then the p<+> type transfer region 18 to enter into the region 15 is formed by ion implantation using the electrode thereof as the mask, and the n<+> type carrier supply region 19 is provided thereon.
JP56047985A 1981-03-31 1981-03-31 Semiconductor device Granted JPS57162458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047985A JPS57162458A (en) 1981-03-31 1981-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047985A JPS57162458A (en) 1981-03-31 1981-03-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162458A true JPS57162458A (en) 1982-10-06
JPH0322063B2 JPH0322063B2 (en) 1991-03-26

Family

ID=12790602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047985A Granted JPS57162458A (en) 1981-03-31 1981-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162458A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5243381A (en) * 1975-09-30 1977-04-05 Siemens Ag Information memory for storing information as charge and method of driving same
JPS561558A (en) * 1979-06-18 1981-01-09 Fujitsu Ltd Dynamic memory cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5243381A (en) * 1975-09-30 1977-04-05 Siemens Ag Information memory for storing information as charge and method of driving same
JPS561558A (en) * 1979-06-18 1981-01-09 Fujitsu Ltd Dynamic memory cell

Also Published As

Publication number Publication date
JPH0322063B2 (en) 1991-03-26

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