JPS57157566A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57157566A
JPS57157566A JP4290181A JP4290181A JPS57157566A JP S57157566 A JPS57157566 A JP S57157566A JP 4290181 A JP4290181 A JP 4290181A JP 4290181 A JP4290181 A JP 4290181A JP S57157566 A JPS57157566 A JP S57157566A
Authority
JP
Japan
Prior art keywords
region
layer
type
diffused
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4290181A
Other languages
Japanese (ja)
Inventor
Masaru Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4290181A priority Critical patent/JPS57157566A/en
Publication of JPS57157566A publication Critical patent/JPS57157566A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0777—Vertical bipolar transistor in combination with capacitors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a capacitor for preventing an oscillation in the same substrate by forming a shallow diffused region of the same conductive type as an emitter region over collector and base regions when a transistor element is formed by diffusing the base region in the collector region and forming the emitter region in the base region. CONSTITUTION:An N<+> type buried layer 22 is diffused and formed in a P type Si substrate 21, an N type layer 23 becoming a collector region is expitaxially grown on the overall surface including the layer 22, and the layer 23 is insularly formed with a P<+> type isolation region 27 reaching the substrate 21 which containing the layer 22. Subsequently, a P<+> type base region is diffused and formed in the insular layer 23, and an N<+> type emitter region 25 is formed in the base region, thereby forming an ordinary N-P-N type transistor. Thereafter, a shallow N<+> type diffused region 26 extending to the surface layer of the layer 23 is formed on the surface layer of the region 24, and a capacitor for preventing an oscillation is formed at the P-N junction of the region 24 and the layer 23. In this manner, the capacitor is formed in the same substrate, thereby largely reducing the area of a chip.
JP4290181A 1981-03-24 1981-03-24 Semiconductor device Pending JPS57157566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4290181A JPS57157566A (en) 1981-03-24 1981-03-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4290181A JPS57157566A (en) 1981-03-24 1981-03-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57157566A true JPS57157566A (en) 1982-09-29

Family

ID=12648925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4290181A Pending JPS57157566A (en) 1981-03-24 1981-03-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57157566A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4975281A (en) * 1972-11-24 1974-07-19
JPS5056175A (en) * 1973-09-13 1975-05-16
JPS50149285A (en) * 1974-05-20 1975-11-29
JPS50158287A (en) * 1974-06-04 1975-12-22

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4975281A (en) * 1972-11-24 1974-07-19
JPS5056175A (en) * 1973-09-13 1975-05-16
JPS50149285A (en) * 1974-05-20 1975-11-29
JPS50158287A (en) * 1974-06-04 1975-12-22

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