JPS5676568A - Manufacture of thyristor - Google Patents

Manufacture of thyristor

Info

Publication number
JPS5676568A
JPS5676568A JP15543279A JP15543279A JPS5676568A JP S5676568 A JPS5676568 A JP S5676568A JP 15543279 A JP15543279 A JP 15543279A JP 15543279 A JP15543279 A JP 15543279A JP S5676568 A JPS5676568 A JP S5676568A
Authority
JP
Japan
Prior art keywords
region
wafer substrate
type
element forming
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15543279A
Other languages
Japanese (ja)
Inventor
Minoru Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15543279A priority Critical patent/JPS5676568A/en
Publication of JPS5676568A publication Critical patent/JPS5676568A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To reduce the voltage drop when a thyristor is conducted by forming a step in a p type emitter region and forming the width of the n type base region thin in the element forming part and thick in the mesa groove forming part. CONSTITUTION:A recess 11 (a depth of deeper than 10mum) is formed by etching the main surface of the side to be formed with a p type emitter region 5a of the element forming part of an n type wafer substrate. Then, p type emitter region region 5a and p type base region 4 are so formed on both main surface of the wafer substrate that the width of the region 5a is thicker than the width of the base 4, and the residue of the wafer substrate is formed as an n type base region 3. Thereafter n type emitter region 6 is formed at the predetermined part of the surface part of the region 4, and the mesa groove 7 not reachig the n type base region 3 and the mesa groove 7 reaching the recess 11 are formed from both surfaces of the wafer substrate between the element forming parts and between the element forming part and the peripheral edge of the wafer substrate.
JP15543279A 1979-11-27 1979-11-27 Manufacture of thyristor Pending JPS5676568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15543279A JPS5676568A (en) 1979-11-27 1979-11-27 Manufacture of thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15543279A JPS5676568A (en) 1979-11-27 1979-11-27 Manufacture of thyristor

Publications (1)

Publication Number Publication Date
JPS5676568A true JPS5676568A (en) 1981-06-24

Family

ID=15605884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15543279A Pending JPS5676568A (en) 1979-11-27 1979-11-27 Manufacture of thyristor

Country Status (1)

Country Link
JP (1) JPS5676568A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116767A (en) * 1981-12-23 1983-07-12 シ−メンス・アクチエンゲゼルシヤフト Semiconductor element
US4849800A (en) * 1986-10-01 1989-07-18 Bbc Brown Boveri Ag Semiconductor component
US4977107A (en) * 1989-08-23 1990-12-11 Motorola Inc. Method for manufacturing semiconductor rectifier
EP0579502A2 (en) * 1992-07-15 1994-01-19 Texas Instruments Incorporated Solid state transient suppressor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116767A (en) * 1981-12-23 1983-07-12 シ−メンス・アクチエンゲゼルシヤフト Semiconductor element
US4849800A (en) * 1986-10-01 1989-07-18 Bbc Brown Boveri Ag Semiconductor component
US4977107A (en) * 1989-08-23 1990-12-11 Motorola Inc. Method for manufacturing semiconductor rectifier
EP0579502A2 (en) * 1992-07-15 1994-01-19 Texas Instruments Incorporated Solid state transient suppressor
EP0579502A3 (en) * 1992-07-15 1994-03-30 Texas Instruments Inc
US5429953A (en) * 1992-07-15 1995-07-04 Texas Instruments Incorporated Method of forming solid state suppressors with concave and diffused substitution regions

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