JPS5662339A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5662339A
JPS5662339A JP13774979A JP13774979A JPS5662339A JP S5662339 A JPS5662339 A JP S5662339A JP 13774979 A JP13774979 A JP 13774979A JP 13774979 A JP13774979 A JP 13774979A JP S5662339 A JPS5662339 A JP S5662339A
Authority
JP
Japan
Prior art keywords
silicon
film
substrate
point metal
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13774979A
Other languages
Japanese (ja)
Other versions
JPH0147012B2 (en
Inventor
Toru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13774979A priority Critical patent/JPS5662339A/en
Publication of JPS5662339A publication Critical patent/JPS5662339A/en
Publication of JPH0147012B2 publication Critical patent/JPH0147012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a electrode wiring excellent in ohmic contact property and adhesivity by continuously applying a silicon film and a silicide film of a high- melting-point metal in such a manner that the surface of a silicon film is kept from being exposed. CONSTITUTION:A silicon is evaporated on a silicon substrate 1 having a contact hole formed therethrough for a given time. Then, a high melting-point metal is deposited on the substrate 1 continuing the silicon evaporation to form a laminated film of a silicon film 5 and silicide film 6 of a high-melting-point metal. Consequently, a silicon film 5 is interposed between the silicon substrate 1 and the silicide film 6. Though exisiting on the substrate of the silicon substrate, a silicon oxide 3 of 20- 30Angstrom is easily taken into a crystaline particle mass of the silicon film by heat treatment as it is pinched between the same kind of semiconductors like the silicon substrate 1 and the silicon film 5. Accordingly, a better ohmic contact can be obtained.
JP13774979A 1979-10-26 1979-10-26 Production of semiconductor device Granted JPS5662339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13774979A JPS5662339A (en) 1979-10-26 1979-10-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13774979A JPS5662339A (en) 1979-10-26 1979-10-26 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5662339A true JPS5662339A (en) 1981-05-28
JPH0147012B2 JPH0147012B2 (en) 1989-10-12

Family

ID=15205925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13774979A Granted JPS5662339A (en) 1979-10-26 1979-10-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5662339A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5886761A (en) * 1981-10-27 1983-05-24 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Polysilicon mutial connector for bipolar transistor flip-flop
JPS59220919A (en) * 1983-05-31 1984-12-12 Toshiba Corp Manufacture of semiconductor device
JPS6057974A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS63207179A (en) * 1987-02-24 1988-08-26 Seikosha Co Ltd Manufacture of semiconductor device
JPH0226021A (en) * 1988-07-14 1990-01-29 Matsushita Electron Corp Formation of multilayer interconnection
JPH02292866A (en) * 1989-05-02 1990-12-04 Nec Corp Manufacture of mis type semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944797A (en) * 1972-06-19 1974-04-27
JPS5413283A (en) * 1977-06-30 1979-01-31 Ibm Method of forming metal silicide layer on substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944797A (en) * 1972-06-19 1974-04-27
JPS5413283A (en) * 1977-06-30 1979-01-31 Ibm Method of forming metal silicide layer on substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5886761A (en) * 1981-10-27 1983-05-24 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Polysilicon mutial connector for bipolar transistor flip-flop
JPS59220919A (en) * 1983-05-31 1984-12-12 Toshiba Corp Manufacture of semiconductor device
JPS6057974A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS63207179A (en) * 1987-02-24 1988-08-26 Seikosha Co Ltd Manufacture of semiconductor device
JPH0226021A (en) * 1988-07-14 1990-01-29 Matsushita Electron Corp Formation of multilayer interconnection
JPH02292866A (en) * 1989-05-02 1990-12-04 Nec Corp Manufacture of mis type semiconductor device

Also Published As

Publication number Publication date
JPH0147012B2 (en) 1989-10-12

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