JPS5735318A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5735318A
JPS5735318A JP11131780A JP11131780A JPS5735318A JP S5735318 A JPS5735318 A JP S5735318A JP 11131780 A JP11131780 A JP 11131780A JP 11131780 A JP11131780 A JP 11131780A JP S5735318 A JPS5735318 A JP S5735318A
Authority
JP
Japan
Prior art keywords
film
electrode
diffused layer
attaching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11131780A
Other languages
Japanese (ja)
Other versions
JPH0126172B2 (en
Inventor
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11131780A priority Critical patent/JPS5735318A/en
Publication of JPS5735318A publication Critical patent/JPS5735318A/en
Publication of JPH0126172B2 publication Critical patent/JPH0126172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve electrode-forming yield and reliability, by attaching a first high-melting point metal, containing Si uniformly, onto a region having an opening provided on an insulating film on a substrate having a shallow-joint diffused layer, and then, by attaching a second high-melting point metal thereonto to form an electrode pattern and providing it with heat treatment. CONSTITUTION:A diffused layer 9 of a second conductivity type having a shallow junction of 0.3-0.1mum is formed on an Si substrate 8 of a first conductivity type. A contact window 11 is opened on a part of an SiO2 film 10 on the substrate 8 and the diffused layer 9 is exposed. A Ti film 12 containing Si uniformly is deposited 1,000Angstrom by evaporation in such a manner as to cover the contact window 11. And then, an electrode pattern is formed by attaching Al or Al-Si alloy film 13 onto the film 12. And then, it is sintered for 30min at 400-500 deg.C to exchange the film 12 with a Ti-Si-Al alloy layer 12, so that an electrode of MOS integrated circuit is formed. It is possible, by doing so, to improve production yield and reliability of the electrode to be formed on the diffused layer having a shallow junction.
JP11131780A 1980-08-12 1980-08-12 Manufacture of semiconductor device Granted JPS5735318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11131780A JPS5735318A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11131780A JPS5735318A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5735318A true JPS5735318A (en) 1982-02-25
JPH0126172B2 JPH0126172B2 (en) 1989-05-22

Family

ID=14558148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11131780A Granted JPS5735318A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735318A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283174A (en) * 1985-06-07 1986-12-13 Kanegafuchi Chem Ind Co Ltd Heat resistant thin film photoelectric converter and manufacture thereof
JPS62111421A (en) * 1985-11-09 1987-05-22 Mitsubishi Electric Corp Proportional control method for metal silicide film composition
JPS62112323A (en) * 1985-09-11 1987-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Formation of contact on semiconductor surface
JPS62160745A (en) * 1986-01-09 1987-07-16 Fuji Electric Co Ltd Semiconductor device
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283174A (en) * 1985-06-07 1986-12-13 Kanegafuchi Chem Ind Co Ltd Heat resistant thin film photoelectric converter and manufacture thereof
JPS62112323A (en) * 1985-09-11 1987-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Formation of contact on semiconductor surface
JPS62111421A (en) * 1985-11-09 1987-05-22 Mitsubishi Electric Corp Proportional control method for metal silicide film composition
JPS62160745A (en) * 1986-01-09 1987-07-16 Fuji Electric Co Ltd Semiconductor device
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device

Also Published As

Publication number Publication date
JPH0126172B2 (en) 1989-05-22

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