JPS56124273A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56124273A
JPS56124273A JP2761380A JP2761380A JPS56124273A JP S56124273 A JPS56124273 A JP S56124273A JP 2761380 A JP2761380 A JP 2761380A JP 2761380 A JP2761380 A JP 2761380A JP S56124273 A JPS56124273 A JP S56124273A
Authority
JP
Japan
Prior art keywords
channel
gate
source
sipos
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2761380A
Other languages
English (en)
Other versions
JPH0470787B2 (ja
Inventor
Junichi Nishizawa
Tadahiro Omi
Nobuo Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP2761380A priority Critical patent/JPS56124273A/ja
Publication of JPS56124273A publication Critical patent/JPS56124273A/ja
Priority to US06/517,381 priority patent/US4484207A/en
Publication of JPH0470787B2 publication Critical patent/JPH0470787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2761380A 1980-03-04 1980-03-04 Semiconductor device Granted JPS56124273A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2761380A JPS56124273A (en) 1980-03-04 1980-03-04 Semiconductor device
US06/517,381 US4484207A (en) 1980-03-04 1983-07-26 Static induction transistor and semiconductor integrated circuit using hetero-junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2761380A JPS56124273A (en) 1980-03-04 1980-03-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56124273A true JPS56124273A (en) 1981-09-29
JPH0470787B2 JPH0470787B2 (ja) 1992-11-11

Family

ID=12225779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2761380A Granted JPS56124273A (en) 1980-03-04 1980-03-04 Semiconductor device

Country Status (2)

Country Link
US (1) US4484207A (ja)
JP (1) JPS56124273A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892279A (ja) * 1981-11-23 1983-06-01 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 電界効果トランジスタ
JPS60101974A (ja) * 1983-11-08 1985-06-06 Toshiba Corp 半導体装置
FR2568410A1 (fr) * 1984-07-26 1986-01-31 Japan Res Dev Corp Transistor statique a induction et son circuit integre
FR2569056A1 (fr) * 1984-08-08 1986-02-14 Japan Res Dev Corp Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4573064A (en) * 1981-11-02 1986-02-25 Texas Instruments Incorporated GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
US4654960A (en) * 1981-11-02 1987-04-07 Texas Instruments Incorporated Method for fabricating GaAs bipolar integrated circuit devices
JPS5943581A (ja) * 1982-09-03 1984-03-10 Junichi Nishizawa 半導体光電変換装置
JPS61121369A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 半導体装置
US5181087A (en) * 1986-02-28 1993-01-19 Hitachi, Ltd. Semiconductor device and method of producing the same
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
US5132770A (en) * 1988-08-25 1992-07-21 Kabushiki Kaisha Toshiba Semiconductor device having improved multi-layered substrate structure
DE69132934T2 (de) * 1990-05-23 2002-08-29 Uniphase Opto Holdings Inc., San Jose Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
JP2689057B2 (ja) * 1992-09-16 1997-12-10 本田技研工業株式会社 静電誘導型半導体装置
DE69416619T2 (de) * 1993-05-12 1999-09-30 Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai Halbleiterspeicheranordnung und Verfahren zur Herstellung
JP2550859B2 (ja) * 1993-06-01 1996-11-06 日本電気株式会社 電界効果トランジスタ
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US5498997A (en) * 1994-12-23 1996-03-12 Schiebold; Cristopher F. Transformerless audio amplifier
JP3463776B2 (ja) * 1995-06-22 2003-11-05 シャープ株式会社 ヘテロ接合半導体デバイス
TW425722B (en) * 1995-11-27 2001-03-11 Sumitomo Chemical Co Group III-V compound semiconductor and light-emitting device
KR100519896B1 (ko) * 1996-02-29 2006-04-28 스미또모 가가꾸 가부시끼가이샤 고농도로도핑된반도체및그의제조방법
US5753938A (en) * 1996-08-08 1998-05-19 North Carolina State University Static-induction transistors having heterojunction gates and methods of forming same
US6759308B2 (en) 2001-07-10 2004-07-06 Advanced Micro Devices, Inc. Silicon on insulator field effect transistor with heterojunction gate
US7026650B2 (en) * 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
JP2006032437A (ja) * 2004-07-12 2006-02-02 Sony Corp 半導体レーザおよびこれを用いた光装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS5223275A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Field effect transistor and its manufacturing method
JPS5279784A (en) * 1975-12-26 1977-07-05 Sony Corp Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157556A (en) * 1977-01-06 1979-06-05 Varian Associates, Inc. Heterojunction confinement field effect transistor
FR2386903A1 (fr) * 1977-04-08 1978-11-03 Thomson Csf Transistor a effet de champ sur support a grande bande interdite
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device
CA1136773A (en) * 1978-08-14 1982-11-30 Norikazu Ohuchi Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS5223275A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Field effect transistor and its manufacturing method
JPS5279784A (en) * 1975-12-26 1977-07-05 Sony Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892279A (ja) * 1981-11-23 1983-06-01 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 電界効果トランジスタ
JPH0126551B2 (ja) * 1981-11-23 1989-05-24 Intaanashonaru Bijinesu Mashiinzu Corp
JPS60101974A (ja) * 1983-11-08 1985-06-06 Toshiba Corp 半導体装置
JPH0210586B2 (ja) * 1983-11-08 1990-03-08 Tokyo Shibaura Electric Co
FR2568410A1 (fr) * 1984-07-26 1986-01-31 Japan Res Dev Corp Transistor statique a induction et son circuit integre
FR2569056A1 (fr) * 1984-08-08 1986-02-14 Japan Res Dev Corp Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor

Also Published As

Publication number Publication date
US4484207A (en) 1984-11-20
JPH0470787B2 (ja) 1992-11-11

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