JPS54149477A - Production of junction type field effect semiconductor device - Google Patents

Production of junction type field effect semiconductor device

Info

Publication number
JPS54149477A
JPS54149477A JP5843178A JP5843178A JPS54149477A JP S54149477 A JPS54149477 A JP S54149477A JP 5843178 A JP5843178 A JP 5843178A JP 5843178 A JP5843178 A JP 5843178A JP S54149477 A JPS54149477 A JP S54149477A
Authority
JP
Japan
Prior art keywords
type
region
injected
oxide film
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5843178A
Other languages
Japanese (ja)
Other versions
JPS6141150B2 (en
Inventor
Michihiro Inoue
Toyoki Takemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5843178A priority Critical patent/JPS54149477A/en
Publication of JPS54149477A publication Critical patent/JPS54149477A/en
Publication of JPS6141150B2 publication Critical patent/JPS6141150B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a production method by which noise is reduced and the lowering of dielectric strength is prevented in the junction type field effect transistor suitable for an IC.
CONSTITUTION: N-type layer 2 is formed on P-type substrate 1 by the epitaxial method, and oxide film 7 is formed by thermal oxidation. Then, P-type impurity is injected from a diffusion window to form P-type region 3, and further, n-type impurity is diffused to form n-type high-density regions 4 and 5. Next, oxide film 7 is opened more widely than P-type diffusion region 3 to form the oxide film of 100 Å in the aperture part. After that, n-type impurity is injected for channel region formation to form n-type layer 6. Next, P-type impurity is injected with accelerating voltage 40 to 60 KeV and a dope quantity of 3×1012/cm2 and is subjected to heat treatment at 800°C to convert the region of 3' to a P-type region completely.
COPYRIGHT: (C)1979,JPO&Japio
JP5843178A 1978-05-16 1978-05-16 Production of junction type field effect semiconductor device Granted JPS54149477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5843178A JPS54149477A (en) 1978-05-16 1978-05-16 Production of junction type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5843178A JPS54149477A (en) 1978-05-16 1978-05-16 Production of junction type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS54149477A true JPS54149477A (en) 1979-11-22
JPS6141150B2 JPS6141150B2 (en) 1986-09-12

Family

ID=13084185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5843178A Granted JPS54149477A (en) 1978-05-16 1978-05-16 Production of junction type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS54149477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138956A (en) * 1980-01-21 1981-10-29 Texas Instruments Inc Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625142U (en) * 1986-05-14 1987-01-13
JPH0359938U (en) * 1989-10-17 1991-06-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138956A (en) * 1980-01-21 1981-10-29 Texas Instruments Inc Semiconductor device

Also Published As

Publication number Publication date
JPS6141150B2 (en) 1986-09-12

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