JPS5555530A - Electrode device for plasma processor - Google Patents

Electrode device for plasma processor

Info

Publication number
JPS5555530A
JPS5555530A JP12732778A JP12732778A JPS5555530A JP S5555530 A JPS5555530 A JP S5555530A JP 12732778 A JP12732778 A JP 12732778A JP 12732778 A JP12732778 A JP 12732778A JP S5555530 A JPS5555530 A JP S5555530A
Authority
JP
Japan
Prior art keywords
electrode
recesses
electrode device
plasma processor
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12732778A
Other languages
Japanese (ja)
Other versions
JPS6135695B2 (en
Inventor
Takuo Sugano
Akio Matsuzawa
Takao Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP12732778A priority Critical patent/JPS5555530A/en
Publication of JPS5555530A publication Critical patent/JPS5555530A/en
Publication of JPS6135695B2 publication Critical patent/JPS6135695B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make the density of electrical current uniform, by providing recesses on the top of an electrode in set positions of wafers and placing an insulating cover of quartz or the like on the top of the electrode except for the recesses.
CONSTITUTION: Projecting members 3 are fitted in recesses 5 on the top of an electrode 1 equipped with a water cooling jacket 6. Wafers 2 to be treated with plasma are placed on the projecting members 3. An insulating cover 4 of quartz or the like is provided on the top of the elecrode 1 except for the recesses 5. A cylndrical shield 7 is provided around the electrode.
COPYRIGHT: (C)1980,JPO&Japio
JP12732778A 1978-10-18 1978-10-18 Electrode device for plasma processor Granted JPS5555530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12732778A JPS5555530A (en) 1978-10-18 1978-10-18 Electrode device for plasma processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12732778A JPS5555530A (en) 1978-10-18 1978-10-18 Electrode device for plasma processor

Publications (2)

Publication Number Publication Date
JPS5555530A true JPS5555530A (en) 1980-04-23
JPS6135695B2 JPS6135695B2 (en) 1986-08-14

Family

ID=14957180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12732778A Granted JPS5555530A (en) 1978-10-18 1978-10-18 Electrode device for plasma processor

Country Status (1)

Country Link
JP (1) JPS5555530A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758320A (en) * 1980-09-24 1982-04-08 Hitachi Ltd Work mounting stage in plasma asher device
JPS57167630A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing device
JPS60201632A (en) * 1984-03-27 1985-10-12 Anelva Corp Dry etching apparatus
JPS63177520A (en) * 1987-01-19 1988-07-21 Matsushita Electric Ind Co Ltd Dry etching device
JPH01280838A (en) * 1987-11-30 1989-11-13 Tandem Comput Inc Parity reproduction self-checking
JPH03181128A (en) * 1989-12-11 1991-08-07 Tokyo Electron Ltd Plasma device
JPH0525647A (en) * 1991-02-12 1993-02-02 Fujitsu Ltd Plasma vapor growth method
JPH0631703B2 (en) * 1986-02-03 1994-04-27 ヒユ−ズ・エアクラフト・カンパニ− Heat pipes and devices for holding heat pipes
US5443689A (en) * 1991-12-11 1995-08-22 Matsushita Electric Industrial Co., Ltd. Dry etching process utilizing a recessed electrode

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758320A (en) * 1980-09-24 1982-04-08 Hitachi Ltd Work mounting stage in plasma asher device
JPS57167630A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing device
JPS60201632A (en) * 1984-03-27 1985-10-12 Anelva Corp Dry etching apparatus
JPH0523053B2 (en) * 1984-03-27 1993-03-31 Anelva Corp
JPH0631703B2 (en) * 1986-02-03 1994-04-27 ヒユ−ズ・エアクラフト・カンパニ− Heat pipes and devices for holding heat pipes
JPS63177520A (en) * 1987-01-19 1988-07-21 Matsushita Electric Ind Co Ltd Dry etching device
JPH01280838A (en) * 1987-11-30 1989-11-13 Tandem Comput Inc Parity reproduction self-checking
JPH03181128A (en) * 1989-12-11 1991-08-07 Tokyo Electron Ltd Plasma device
JPH0525647A (en) * 1991-02-12 1993-02-02 Fujitsu Ltd Plasma vapor growth method
US5443689A (en) * 1991-12-11 1995-08-22 Matsushita Electric Industrial Co., Ltd. Dry etching process utilizing a recessed electrode

Also Published As

Publication number Publication date
JPS6135695B2 (en) 1986-08-14

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